A production line for mass production of silicon wafer edge passivation

By using hot-wire CVD technology and an automated silicon wafer feeding system with a dual-carrier layout, multi-sided passivation of silicon wafer edges is achieved at low temperatures without breaking the vacuum. This solves the problems of complex automation and single-sided deposition in existing equipment, and improves production efficiency and equipment scalability.

CN120239355BActive Publication Date: 2025-11-21HAC GENERAL SEMITECH CO LTD
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Patent Information

Application Number
CN202510379201.5
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-03-28
Publication Date
2025-11-21
Estimated Expiration
2045-03-28

AI Technical Summary

Technical Problem

Existing silicon wafer edge passivation equipment has complex automated operations, can only deposit film layers on the edge of a single silicon wafer, and performs passivation under high temperature and vacuum conditions, which is difficult to meet the needs of high-efficiency production.

Method used

Hot-wire CVD technology is used to passivate the edges of silicon wafers at low temperatures. Multi-faceted passivation of the silicon wafer edges is achieved through an automated silicon wafer feeding system and a dual-carrier layout. A-Si:H and SiNx:H composite films are deposited using process stage components without breaking the vacuum.

Benefits of technology

It achieves efficient multi-faceted passivation of silicon wafer edges, improving production efficiency and capacity, reducing equipment upgrade costs, and enhancing equipment scalability and production line automation.

✦ Generated by Eureka AI based on patent content.

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Abstract

The application relates to a production line for mass production of silicon wafer edge passivation, which comprises a hot filament CVD process table assembly for depositing a passivation film on the edge of a silicon wafer; a silicon wafer loading and unloading system for respectively loading the silicon wafer on a vertical carrier plate and recovering the silicon wafer after edge passivation from the vertical carrier plate; a first and a second carrier plate rotating assembly, the first carrier plate rotating assembly is arranged on the inlet side of the process table assembly and adjacent to the silicon wafer loading system, and receives the vertical carrier plate loaded with the silicon wafer on both sides and transports the vertical carrier plate into the process table assembly, the second carrier plate rotating assembly is arranged on the outlet side of the process table assembly and adjacent to the silicon wafer unloading system, and receives the vertical carrier plate on both sides and transports the vertical carrier plate to the silicon wafer unloading system; and a carrier plate conveying assembly which is arranged between the first and the second carrier plate rotating assembly and cyclically transports the vertical carrier plate between the two. The application uses the hot filament CVD technology to passivate the edge of the silicon wafer, realizes automatic collection and placement of the silicon wafer, doubles the production capacity, and realizes deposition of multiple film layers on the silicon wafer.
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Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of coating of silicon wafers, and more particularly, relates to a production line for mass production of edge passivation of silicon wafers. BACKGROUND

[0002] With the continuous development of photovoltaic technology and the continuous enhancement of human environmental protection awareness, enterprises pay more and more attention to energy saving and environmental protection. In the photovoltaic cell industry, by cutting a silicon wafer into two halves, the current path of the cell wafer is shortened, and the resistance is reduced to 1 / 4 of the full cell wafer, thereby reducing cell wafer loss, enhancing the environmental adaptability of the silicon wafer, and improving reliability, which has become a key process to improve the performance of photovoltaic modules, especially widely used in high-efficiency cells (such as TOPCon (Tunnel Oxide Passivated Contact), HJT (Hereto-junction with Intrinsic Thin-layer)). However, during the cutting, grinding and polishing of the silicon wafer, mechanical damage such as micro-cracks and scratches is prone to occur on the edge. By passivating the edge of the silicon wafer, mechanical damage and stress concentration in subsequent processes can be prevented, and the uniformity and yield of subsequent processes such as photolithography and etching can be improved.

[0003] However, the existing silicon wafer passivation usually involves the following steps: first, the silicon wafers are collected and placed in a passivation tool box (the silicon wafers are placed vertically in the box), then the tool box is placed in a carrier plate, and the carrier plate is pushed into the passivation cavity by automation or other means to passivate the silicon wafers. Therefore, the device needs to achieve: (1) taking the silicon wafers out of the silicon wafer box; (2) placing the silicon wafers in the passivation tool box; (3) rotating the silicon wafers by 90° to make the edge of the silicon wafers face upwards; (4) placing the passivation tool box on the carrier plate and automatically pushing the carrier plate into the cavity for passivation. However, the automatic operation of such a device is complex, and it can only deposit a film layer on one side of the silicon wafer edge.

[0004] Therefore, there is an urgent need to design a production line for silicon wafer edge passivation that can solve the above-mentioned defects. SUMMARY

[0005] In view of the deficiencies of the prior art, the purpose of the present application is to provide a production line for mass production of silicon wafer edge passivation. The production line can passivate and continuously deposit intrinsic a-Si:H+SiN x :H (or SiN x O y :H) composite film layers on the edge of the silicon wafer in a low-temperature environment (the temperature of the silicon wafer cannot exceed 250°C) without breaking the vacuum in one device.

[0006] In order to solve the above technical problems or achieve the above purposes, the present application adopts the following technical solutions:

[0007] According to one aspect of the present invention, a production line for mass production of silicon wafer edge passivation is provided, comprising:

[0008] A hot-filament CVD stage assembly configured to deposit a passivation film layer on the edge of a silicon wafer;

[0009] A silicon wafer loading system and a silicon wafer unloading system, the silicon wafer loading system being configured to load silicon wafers onto a vertical carrier plate, and the silicon wafer unloading system being configured to retrieve edge-passivated silicon wafers from the vertical carrier plate;

[0010] A first carrier rotary assembly and a second carrier rotary assembly. The first carrier rotary assembly is located on the inlet side of the process stage assembly and adjacent to the silicon wafer loading system. Both sides of the first carrier rotary assembly receive vertical carriers loaded with silicon wafers and transport the vertical carriers into the process stage assembly. The second carrier rotary assembly is located on the outlet side of the process stage assembly and adjacent to the silicon wafer unloading system. Both sides of the second carrier rotary assembly receive vertical carriers exiting from the process stage assembly and transport the vertical carriers into the silicon wafer unloading system.

[0011] A carrier plate conveying assembly is disposed between a first carrier plate rotating assembly and a second carrier plate rotating assembly and is configured to circulate vertical carrier plates between the two.

[0012] In one embodiment of the present invention, the process stage assembly includes a feed chamber, multiple process chambers, and a discharge chamber, wherein the multiple process chambers include a first process chamber and a second process chamber, and an a-Si:H film is deposited on the edge of a silicon wafer on a carrier under vacuum conditions in the first process chamber, and a SiN film is deposited on the a-Si:H film under vacuum conditions in the second process chamber. x :H film or SiN x O y :H film layer.

[0013] In one embodiment of the present invention, the silicon wafer loading system and the silicon wafer unloading system are each set up independently.

[0014] In one embodiment of the present invention, the silicon wafer loading system includes a silicon wafer loading and packaging assembly and a silicon wafer loading assembly, wherein the silicon wafer loading and packaging assembly places the silicon wafer in a passivation cassette, the silicon wafer loading assembly loads the passivation cassette filled with silicon wafers onto the carrier plate of the first carrier plate rotation assembly, and places an empty passivation cassette on the carrier plate of the first carrier plate rotation assembly onto the silicon wafer loading and packaging assembly.

[0015] In one embodiment of the present invention, the silicon wafer feeding system includes a silicon wafer feeding assembly and a silicon wafer feeding and recycling assembly. The silicon wafer feeding assembly places passivation cassettes from the carrier plate of the second carrier plate rotation assembly onto the silicon wafer feeding and recycling assembly, and places empty passivation cassettes from the silicon wafer feeding and recycling assembly onto the carrier plate of the second carrier plate rotation assembly. The silicon wafer feeding and recycling assembly removes the silicon wafers from the passivation cassettes and packages them. The carrier plate of the empty passivation cassettes on the second carrier plate rotation assembly is transported to the first carrier plate rotation assembly via a carrier plate conveying assembly.

[0016] In one embodiment of the present invention, the first carrier plate rotation assembly rotates 180° to receive a vertical carrier plate on each of its two sides. The first carrier plate rotation assembly rotates 90° to make the side of one vertical carrier plate on which the silicon wafer is placed face the silicon wafer loading assembly and completes the loading of the passivation packaging box filled with silicon wafers. The first carrier plate rotation assembly rotates 180° again to make the side of the other vertical carrier plate on which the silicon wafer is placed face the silicon wafer loading assembly and completes the loading of the passivation packaging box filled with silicon wafers. After the two vertical carrier plates are loaded, the first carrier plate rotation assembly rotates 90° again and transports the two vertical carrier plates into the process stage assembly.

[0017] The second carrier rotary assembly rotates 180° to receive a vertical carrier from the process stage assembly on each side. The second carrier rotary assembly rotates 90° so that the silicon wafer-placed side of one of the vertical carriers faces the silicon wafer unloading assembly and completes the passivation and packaging recovery. The second carrier rotary assembly rotates 180° again so that the silicon wafer-placed side of the other vertical carrier faces the silicon wafer unloading assembly and completes the passivation and packaging recovery. After the two vertical carriers are recovered, the second carrier rotary assembly rotates 90° again and transports the two vertical carriers to the carrier conveyor assembly.

[0018] In one embodiment of the present invention, the silicon wafer loading system and the silicon wafer unloading system share the same silicon wafer loading and unloading components and are configured as a whole.

[0019] In one embodiment of the present invention, the silicon wafer loading system further includes a silicon wafer loading and packaging assembly, wherein the silicon wafer loading and packaging assembly places the silicon wafer in a passivation packaging box, the silicon wafer unloading assembly loads the passivation packaging box filled with silicon wafers onto the carrier plate of the carrier plate conveying assembly, and the carrier plate conveying assembly transports the carrier plate filled with the passivation packaging box of silicon wafers to a first carrier plate rotary assembly.

[0020] In one embodiment of the present invention, the silicon wafer unloading system further includes a silicon wafer unloading and recycling component, wherein the second carrier plate rotation component transports the passivated carrier plate to the carrier plate conveying component, the silicon wafer unloading and recycling component places the passivated packaging box on the passivated carrier plate on the carrier plate conveying component onto the silicon wafer unloading and recycling component and places the empty passivated packaging box on the silicon wafer unloading and recycling component onto the silicon wafer loading and packaging component, and the silicon wafer unloading and recycling component removes the silicon wafer from the passivated packaging box and packages it.

[0021] In one embodiment of the present invention, the first carrier plate rotation assembly rotates 180° to receive a vertical carrier plate on each of its two sides and transports the two vertical carrier plates into the process table assembly; the second carrier plate rotation assembly rotates 180° to receive a vertical carrier plate exiting from the process table assembly on each of its two sides.

[0022] The technical solution provided by this invention has the following advantages compared with the prior art:

[0023] (1) The present invention uses hot wire CVD technology to passivate the edge of silicon wafers, and automatically collects and puts silicon wafers in through an automated silicon wafer feeding system (especially an automated silicon wafer feeding and packaging component). The production capacity is doubled through vertical carrier plate fixing and dual carrier plate layout. Multiple passivation film layers are deposited on silicon wafers without breaking the vacuum through the configuration of process stage components (especially multiple process chambers).

[0024] (2) The production line of the present invention has a strong integrated design. The carrier conveying assembly realizes the integrated design scheme of carrier feeding, carrier discharging and carrier recycling. The separate silicon wafer loading assembly and silicon wafer unloading assembly, as well as the integrated silicon wafer loading and unloading assembly, realize the integrated design scheme of passivation box loading, passivation box unloading and passivation box recycling.

[0025] (3) The production line of the present invention has high capacity and strong scalability. Upgrading the production line only requires adding a small number of process chamber equipment. Attached Figure Description

[0026] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0027] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0028] Figure 1 A simplified structural diagram of a mass production line for silicon wafer edge passivation provided in one embodiment of the present invention is shown.

[0029] Figure 2 It shows Figure 1 A top-view diagram showing the detailed structure of the production line;

[0030] Figure 3 A simplified structural diagram of a mass production line for silicon wafer edge passivation provided in another embodiment of the present invention is shown;

[0031] Figure 4 It shows Figure 3 A top-view diagram showing the detailed structure of the production line.

[0032] The components include: 1. Process table assembly; 2. Silicon wafer loading system; 3. Silicon wafer unloading system; 4. Silicon wafer loading and packaging assembly; 5. Silicon wafer loading assembly; 6. Silicon wafer unloading assembly; 7. Silicon wafer unloading and recycling assembly; 8. First carrier plate rotation assembly; 9. Second carrier plate rotation assembly; 10. Silicon wafer loading and unloading assembly; 11. Carrier plate conveying assembly; 12. Feeding chamber; 13. First process chamber; 14. Second process chamber; 15. Discharge chamber. Detailed Implementation

[0033] To better understand the above-mentioned objectives, features, and advantages of the present invention, embodiments of the present invention will be further described below. It should be noted that, unless otherwise specified, embodiments of the present invention and features thereof can be combined with each other.

[0034] Numerous specific details are set forth in the following description in order to provide a full understanding of the invention, but the invention may also be practiced in other ways than those described herein; obviously, the embodiments in the specification are only some, and not all, of the embodiments of the invention.

[0035] like Figures 1-4 As shown, an embodiment of the present invention provides a production line for mass production of silicon wafer edge passivation, comprising:

[0036] Hot-filament CVD process stage assembly 1, configured to deposit a passivation film layer on the edge of a silicon wafer;

[0037] The silicon wafer loading system 2 and the silicon wafer unloading system 3 are configured to load silicon wafers onto a vertical carrier plate, and the silicon wafer unloading system 3 is configured to recover edge-passivated silicon wafers from the vertical carrier plate.

[0038] The first carrier plate rotating assembly 8 and the second carrier plate rotating assembly 9 are located on the inlet side of the process stage assembly 1 and adjacent to the silicon wafer loading system 2. The two sides of the first carrier plate rotating assembly 8 receive vertical carrier plates loaded with silicon wafers and transport the vertical carrier plates into the process stage assembly 1. The second carrier plate rotating assembly 9 is located on the outlet side of the process stage assembly 1 and adjacent to the silicon wafer unloading system 3. The two sides of the second carrier plate rotating assembly 9 receive vertical carrier plates exiting from the process stage assembly 1 and transport the vertical carrier plates into the silicon wafer unloading system 3.

[0039] A carrier plate conveying assembly 11 is disposed between a first carrier plate rotating assembly 8 and a second carrier plate rotating assembly 9 and is configured to circulate vertical carrier plates between the two.

[0040] Through the above technical solution of the present invention, the present invention uses hot-wire CVD technology to passivate the edge of silicon wafers, realizes automatic collection and placement of silicon wafers through an automated silicon wafer feeding system, achieves double the production capacity through vertical carrier plate fixing and dual carrier plate layout, and realizes the deposition of various passivation film layers on silicon wafers without breaking the vacuum through process station component configuration.

[0041] In the production line shown in the above embodiments of the present invention, such as Figures 1-4 As shown, the process stage assembly 1 includes a feed chamber 12, multiple process chambers, and a discharge chamber 15. The multiple process chambers include a first process chamber 13 and a second process chamber 14. Under vacuum conditions, an a-Si:H (amorphous silicon) film is deposited on the edge of a silicon wafer on a vertical carrier plate in the first process chamber 13, and under vacuum conditions, SiN is deposited on the a-Si:H film in the second process chamber 14. x :H (silicon nitride) film or SiN x O y :H (silicon oxynitride) film. Of course, in other alternative embodiments, the number of process chambers can be increased as needed for further coating. Multiple process chamber configurations enable the deposition of various passivation films on the silicon wafer without breaking the vacuum within the process chambers.

[0042] In the production line shown in the above embodiments of the present invention, such as Figures 1-2 As shown, the silicon wafer loading system 2 and the silicon wafer unloading system 3 are set up independently.

[0043] In the production line shown in the above embodiments of the present invention, such as Figures 1-2As shown, the silicon wafer loading system 2 includes a silicon wafer loading and packaging assembly 4 and a silicon wafer loading assembly 5. The silicon wafer loading and packaging assembly 4 places silicon wafers in passivation packaging boxes. The silicon wafer loading assembly 5 loads the passivation packaging boxes filled with silicon wafers onto the vertical carrier plate of the first carrier plate rotation assembly 8 and places empty passivation packaging boxes from the vertical carrier plate of the first carrier plate rotation assembly 8 onto the silicon wafer loading and packaging assembly 4. The silicon wafer unloading system 3 includes a silicon wafer unloading assembly 6 and a silicon wafer unloading and recycling assembly 7. The silicon wafer unloading assembly 6 places passivation packaging boxes from the vertical carrier plate of the second carrier plate rotation assembly 9 onto the silicon wafer unloading and recycling assembly 7 and places empty passivation packaging boxes from the silicon wafer unloading and recycling assembly 7 onto the vertical carrier plate of the second carrier plate rotation assembly 9. The silicon wafer unloading and recycling assembly 7 removes the silicon wafers from the passivation packaging boxes and packages them. The passivation packaging box is a container for holding silicon wafers, and the vertical carrier plate is a transport carrier for holding the passivation packaging boxes. The production line of the present invention realizes an integrated design scheme for passivation chemical packaging and unpacking, and passivation chemical packaging and recycling through independently set silicon wafer feeding component 5 and silicon wafer unloading component 6.

[0044] In the production line shown in the above embodiments of the present invention, such as Figures 1-2 As shown, the vertical carrier plates of empty passivated chemical packaging boxes on the second carrier plate rotating assembly 9 are transported to the first carrier plate rotating assembly 8 via the carrier plate conveying assembly 11. The carrier plate conveying assembly 11 in the production line of the present invention realizes an integrated design scheme for vertical carrier plate feeding, vertical carrier plate discharging, and vertical carrier plate recycling.

[0045] In the production line shown in the above embodiments of the present invention, such as Figures 1-2 As shown, the first carrier plate rotation assembly 8 rotates 180° to receive a vertical carrier plate on each side. The first carrier plate rotation assembly 8 rotates 90° so that the silicon wafer-placed side of one vertical carrier plate faces the silicon wafer loading assembly 5, completing the loading of the passivation packaging box filled with silicon wafers. The first carrier plate rotation assembly 8 rotates again 180° so that the silicon wafer-placed side of the other vertical carrier plate faces the silicon wafer loading assembly 5, completing the loading of the passivation packaging box filled with silicon wafers. After the two vertical carrier plates are loaded, the first carrier plate rotation assembly 8 rotates 90° again and transports the two vertical carrier plates into the process stage assembly 1. The second carrier rotary assembly 9 rotates 180° to receive a vertical carrier from the process stage assembly 1 on each side. The second carrier rotary assembly 9 rotates 90° so that the silicon wafer-placed side of the vertical carrier faces the silicon wafer unloading assembly 6 and completes the passivation and packaging recovery. The second carrier rotary assembly 9 rotates 180° again so that the silicon wafer-placed side of the other vertical carrier faces the silicon wafer unloading assembly 6 and completes the passivation and packaging recovery. After the two vertical carriers are recovered, the second carrier rotary assembly 9 rotates 90° again and transports the two vertical carriers to the carrier conveying assembly 11.

[0046] In this scheme, the carrier plate is vertical on the carrier plate conveying assembly 11 and parallel to the cavity structure of the process stage assembly 1. One vertical carrier plate is transported from the carrier plate conveying assembly 11 to the first carrier plate rotating assembly 8. The first carrier plate rotating assembly 8 rotates 180° to wait for receiving another vertical carrier plate. After receiving one vertical carrier plate on each side of the first carrier plate rotating assembly 8, the side edge of the vertical carrier plate is facing the silicon wafer loading assembly 5, not the side of the vertical carrier plate where the silicon wafer is placed. This prevents the silicon wafer from being placed on the vertical carrier plate by the silicon wafer loading assembly 5. Therefore, the first carrier plate rotating assembly 8 rotates 90° so that the side of the vertical carrier plate where the silicon wafer is placed is facing the silicon wafer loading assembly 5. Only after the loading assembly 5 picks up the silicon wafer and places it on the vertical carrier can the silicon wafer loading assembly 5 complete the loading of the silicon wafer on the vertical carrier. Then, the first carrier rotating assembly 8 rotates 180° again so that the side of the silicon wafer on the other vertical carrier faces the silicon wafer loading assembly 5. Only then can the silicon wafer loading assembly 5 pick up the silicon wafer and place it on the vertical carrier. After the silicon wafer loading assembly 5 loads the passivation packaging box full of silicon wafers onto the corresponding vertical carriers, the two carriers are vertical, but perpendicular to the cavity structure of the process stage assembly 1, and cannot enter. Therefore, the first carrier rotating assembly 8 rotates 90° again, so that the two carriers are parallel to the cavity structure of the process stage assembly 1, and can enter the process stage assembly 1.

[0047] After the two vertical carrier plates complete the film deposition within the process stage assembly 1, one vertical carrier plate exits from the process stage assembly 1 and is transported to the second carrier plate rotation assembly 9. The second carrier plate rotation assembly 9 rotates 180° to receive the other vertical carrier plate. After receiving one vertical carrier plate from each side of the second carrier plate rotation assembly 9, at this point, the side edge of the vertical carrier plate is facing the silicon wafer unloading assembly 6, not the side of the vertical carrier plate where the silicon wafer is placed. This prevents the silicon wafer from being unloaded and recycled by the silicon wafer unloading assembly 6. Therefore, the second carrier plate rotation assembly 9 rotates 90° to... The silicon wafers on the vertical carrier plate are positioned so that the silicon wafer unloading assembly 6 faces the silicon wafer unloading assembly 6. The silicon wafer unloading assembly 6 picks up the passivation cassette of the silicon wafer and places it into the silicon wafer unloading recycling assembly 7, completing the recycling of the passivation cassette. The second carrier plate rotation assembly 9 rotates 180° again so that the silicon wafers on the other vertical carrier plate are positioned so that the silicon wafer unloading assembly 6 faces the silicon wafer unloading assembly 6. The silicon wafer unloading assembly 6 picks up the passivation cassette of the silicon wafer and places it into the silicon wafer unloading recycling assembly 7, completing the recycling of the passivation cassette. After the two vertical carrier plates have been recycled, the second carrier plate rotation assembly 9 rotates 90° again, and the two vertical carrier plates are transported to the carrier plate conveying assembly 11.

[0048] In the production line shown in the above embodiments of the present invention, alternatively, such as Figures 3-4 As shown, the silicon wafer loading system 2 and the silicon wafer unloading system 3 share the silicon wafer loading and unloading assembly 10 and are set up as a whole.

[0049] In the production line shown in the above embodiments of the present invention, such as Figures 3-4 As shown, the silicon wafer loading system 2 also includes a silicon wafer loading and packaging assembly 4, in which the silicon wafer loading and packaging assembly 4 places the silicon wafers in passivation packaging boxes. At this time, the silicon wafer unloading and loading assembly 10 loads the passivation packaging boxes filled with silicon wafers onto the vertical carrier plate of the carrier plate conveying assembly 11. The carrier plate conveying assembly 11 transports the vertical carrier plate filled with passivation packaging boxes to the first carrier plate rotation assembly 8. The silicon wafer unloading system 3 also includes a silicon wafer unloading and recycling assembly 7, in which the second carrier plate rotation assembly 9 transports the passivated vertical carrier plate to the carrier plate conveying assembly 11. At this time, the silicon wafer unloading and loading assembly 10 places the passivation packaging boxes on the passivated vertical carrier plate of the carrier plate conveying assembly 11 onto the silicon wafer unloading and recycling assembly 7 and places the empty passivation packaging boxes on the silicon wafer unloading and recycling assembly 7 onto the silicon wafer loading and packaging assembly 4. The silicon wafer unloading and recycling assembly 7 removes the silicon wafers from the passivation packaging boxes and packages them. The production line of this invention has a strong integrated design. The carrier conveying assembly 11 realizes an integrated design scheme for vertical carrier feeding, vertical carrier discharging and vertical carrier recycling. The silicon wafer loading and unloading assembly 10 realizes an integrated design scheme for passivation chemical box loading, passivation chemical box unloading and passivation chemical box recycling.

[0050] In the production line shown in the above embodiments of the present invention, such as Figures 3-4 As shown, the first carrier plate rotation assembly 8 rotates 180° to receive a vertical carrier plate on each of its two sides, and the two vertical carrier plates enter the process table assembly 1; the second carrier plate rotation assembly 9 rotates 180° to receive a vertical carrier plate that comes out of the process table assembly 1 on each of its two sides.

[0051] In this scheme, such as Figures 3-4 As shown, the carrier plate is vertical on the carrier plate conveying assembly 11. The side of the vertical carrier plate on which the silicon wafer is placed faces the silicon wafer loading and unloading assembly 10. The silicon wafer loading and unloading assembly 10 can grab the silicon wafer and place it on the vertical carrier plate. One vertical carrier plate is transported from the carrier plate conveying assembly 11 to the first carrier plate rotating assembly 8. The first carrier plate rotating assembly 8 rotates 180° to wait for the other vertical carrier plate. After the two sides of the first carrier plate rotating assembly 8 have received the vertical carrier plates loaded with silicon wafers, the two vertical carrier plates move forward together, parallel to the cavity structure of the process stage assembly, and directly enter the process stage assembly 1.

[0052] After the two vertical carrier plates have completed the coating deposition in the process stage assembly 1, one vertical carrier plate comes out of the process stage assembly 1 and is transported to the second carrier plate rotation assembly 9. The second carrier plate rotation assembly 9 rotates 180° and waits to receive the other vertical carrier plate. After receiving one vertical carrier plate on each side of the second carrier plate rotation assembly 9, the two carrier plates are transported to the carrier plate conveying assembly 11.

[0053] The technical solutions of the present invention will be described in detail below through specific embodiments.

[0054] Example 1

[0055] like Figures 1-2 The diagram shows a simplified structural schematic and a detailed top view of a mass production line for silicon wafer edge passivation provided in one embodiment of the present invention. In this embodiment, the production line includes: a hot-filament CVD process stage assembly 1; a silicon wafer loading system 2 and a silicon wafer unloading system 3 independently disposed on the left and right sides of the process stage assembly 1; a first carrier plate rotation assembly 8 and a second carrier plate rotation assembly 9 on the left and right sides of the process stage assembly 1; and a carrier plate conveying assembly 11 between the first carrier plate rotation assembly 8 and the second carrier plate rotation assembly 9.

[0056] The hot-filament CVD process stage assembly 1 is used to deposit a passivation film layer on the edge of a silicon wafer. The hot-filament CVD process stage assembly 1 includes a feed chamber 12, a first process chamber 13, a second process chamber 14, and an output chamber 15. A vertical carrier plate (dual carrier plate) received on both sides of a first carrier plate rotation assembly 8 enters the feed chamber 12 of the process stage assembly 1. The vertical carrier plate undergoes a transition within the feed chamber 12. Once the feed chamber 12 reaches a predetermined vacuum condition, the vertical carrier plate is pushed into the first process chamber 13, where a first thin film, an a-Si:H film, is deposited. After completion, the vertical carrier plate is pushed into the second process chamber 14, where a second thin film, a SiN film, is deposited. x :H film or SiN x O y The H film layer is formed, thus creating a composite passivation film layer. After the coating is completed, the vertical carrier plate is pushed into the discharge chamber 15. After the vacuum in the discharge chamber 15 is broken, the vertical carrier plate is pushed onto the second carrier plate rotary assembly 9.

[0057] The silicon wafer loading system 2 is used to load silicon wafers onto a vertical carrier plate. The silicon wafer loading system 2 includes a silicon wafer loading and packaging assembly 4 and a silicon wafer loading assembly 5. The silicon wafer loading and packaging assembly 4 receives finished silicon wafers, removes them, and places them into pre-set passivation packaging boxes. The silicon wafer loading assembly 5 picks up a passivation packaging box filled with silicon wafers, places it onto the vertical carrier plate of the first carrier plate rotation assembly 8, and picks up empty passivation packaging boxes from the vertical carrier plate of the first carrier plate rotation assembly 8 and places them into the loading and packaging assembly 4.

[0058] The silicon wafer unloading system 3 is used to recover edge-passivated silicon wafers from a vertical carrier. The silicon wafer unloading system 3 includes a silicon wafer unloading assembly 6 and a silicon wafer unloading and recovery assembly 7. The silicon wafer unloading assembly 6 places passivated wafer edge-passivated packaging boxes from the vertical carrier of the second carrier rotation assembly 9 into the silicon wafer unloading and recovery assembly 7, and places empty passivated wafer packaging boxes from the silicon wafer unloading and recovery assembly 7 onto the vertical carrier of the second carrier rotation assembly 9. The silicon wafer unloading and recovery assembly 7 receives passivated wafer packaging boxes after the passivation coating process is completed, which are transferred from the silicon wafer unloading assembly 6, and removes the silicon wafers from the passivated wafer packaging boxes for packaging.

[0059] The first carrier rotary assembly 8 is located on the entrance side of the process stage assembly 1 and adjacent to the silicon wafer loading system 2. The first carrier rotary assembly 8 receives vertical carriers on both sides and then transports the vertical carriers into the process stage assembly 1. The first carrier rotary assembly 8 rotates 180° so that each side receives one vertical carrier. The first carrier rotary assembly 8 rotates 90° so that the silicon wafer-placed side of one vertical carrier faces the silicon wafer loading assembly 5, completing the loading of the passivation cassette filled with silicon wafers. The first carrier rotary assembly 8 rotates 180° again so that the silicon wafer-placed side of the other vertical carrier faces the silicon wafer loading assembly 5, completing the loading of the passivation cassette filled with silicon wafers. After the two vertical carriers are loaded, the first carrier rotary assembly 8 rotates 90° again and transports the two vertical carriers into the process stage assembly 1.

[0060] The second carrier rotary assembly 9 is located on the exit side of the process stage assembly 1 and adjacent to the silicon wafer unloading system 3. Both sides of the second carrier rotary assembly 9 receive vertical carriers exiting from the process stage assembly 1 and transport them to the silicon wafer unloading system 3. Both sides of the second carrier rotary assembly 9 receive passivated vertical carriers. The second carrier rotary assembly 9 rotates 180° so that each side receives one vertical carrier exiting from the process stage assembly 1. The second carrier rotary assembly 9 rotates 90° so that the silicon wafer-placed side of one exiting vertical carrier faces the silicon wafer unloading assembly 6, completing the passivation packaging recovery. The second carrier rotary assembly 9 rotates 180° again so that the silicon wafer-placed side of the other vertical carrier faces the silicon wafer unloading assembly 6, completing the passivation packaging recovery. After the two vertical carriers are recovered, the second carrier rotary assembly 9 rotates 90° again and transports the two vertical carriers to the carrier conveying assembly 11.

[0061] The plate transport assembly 11 is disposed between the first plate rotating assembly 8 and the second plate rotating assembly 9 and configured to circulate vertical plates between them. The plate transport assembly 11 receives vertical plates from the second plate rotating assembly 9 and transports the vertical plates onto the first plate rotating assembly 8.

[0062] Refer again Figures 1-2When used on the above production line, the specific operating procedure is as follows:

[0063] A box of finished silicon wafers is transported by conveyor belt to the silicon wafer loading and packaging component 4 of the silicon wafer loading system 2. The silicon wafer loading and packaging component 4 takes out the finished silicon wafers and puts them into the set passivation packaging box, and the silicon wafers are placed horizontally.

[0064] One side of the first carrier plate rotating assembly 8 receives a vertical carrier plate from the carrier plate conveying assembly 11. After completion, the first carrier plate rotating assembly 8 rotates 180°, and the other side of the first carrier plate rotating assembly 8 receives another vertical carrier plate from the carrier plate conveying assembly 11. After completion, the first carrier plate rotating assembly 8 rotates 90° so that the side of one of the vertical carrier plates where silicon wafers are placed faces the silicon wafer loading assembly 5 of the silicon wafer loading system 2. At this time, the silicon wafer loading assembly 5 (e.g., it can be a six-axis robot or other similar mechanism) picks up the passivation packaging box filled with silicon wafers and places it on the vertical carrier plate. After completion, the first carrier plate rotates... Component 8 rotates 180° again, so that the side of the silicon wafer placed on the other vertical carrier plate faces the silicon wafer loading component 5 of the silicon wafer loading system 2. At this time, the silicon wafer loading component 5 picks up the passivation packaging box filled with silicon wafers and places it on the vertical carrier plate. After the two vertical carrier plates are loaded, the first carrier plate rotation component 8 rotates 90° again and transports the two vertical carrier plates into the process table component 1, thereby realizing the double carrier plate transportation. The vertical double carrier plates are transported to the side of the feeding chamber 12 of the process table component 1. Then, after the vacuum in the feeding chamber 12 is broken, the first carrier plate rotation component 8 pushes the double carrier plates into the feeding chamber 12.

[0065] The silicon wafers on the dual carrier plates undergo a transition in the feed chamber 12. Once the feed chamber 12 reaches the predetermined vacuum condition, the dual carrier plates are pushed into the first process chamber 13 to deposit the first thin film, an a-Si:H film. After this, the dual carrier plates are pushed into the second process chamber 14 to deposit the second thin film, a SiN film. x :H film or SiN x O y :H film layer, thus forming a composite passivation film layer, after the coating is completed, continue to push the double carrier plate into the discharge chamber 15.

[0066] After the vacuum in the discharge chamber 15 is broken, the vertical double carrier plate that has completed coating is pushed into the second carrier plate rotating assembly 9. One side of the second carrier plate rotating assembly 9 receives one vertical carrier plate that has completed coating. The second carrier plate rotating assembly 9 rotates 180° and the other side receives the other vertical carrier plate that has completed coating. Then the second carrier plate rotating assembly 9 rotates 90° so that the side of the silicon wafer on the exposed vertical carrier plate faces the silicon wafer unloading assembly 6 to complete the recycling of the passivation packaging. The second carrier plate rotating assembly 9 rotates 180° again so that the side of the silicon wafer on the other vertical carrier plate faces the silicon wafer unloading assembly 6 to complete the recycling of the passivation packaging. After the two vertical carrier plates are recycled, the second carrier plate rotating assembly 9 rotates 90° again and transports the two vertical carrier plates to the carrier plate conveying assembly 11.

[0067] The silicon wafer unloading component 6 of the silicon wafer unloading system 3 (e.g., it may be a six-axis robot or other similar mechanism) places the passivated chemical packaging box that has completed the passivation process on the second carrier plate rotation component 9 into the silicon wafer unloading and recycling component 7. The silicon wafer unloading and recycling component 7 removes the silicon wafer from the passivated chemical packaging box after the process and packages the silicon wafer. The silicon wafer unloading component 6 places the empty passivated chemical packaging box after removing the silicon wafer on the vertical carrier plate of the second carrier plate rotation component 9.

[0068] The vertical carrier plate of the empty passivated chemical packaging box on the second carrier plate rotation assembly 9 is conveyed to the first carrier plate loading assembly 8 through the carrier plate conveying assembly 11.

[0069] Repeat the above process to perform automated operations in a loop, thereby achieving edge passivation of mass-produced silicon wafers.

[0070] Example 2

[0071] like Figures 3-4 The diagram shows a simplified structural schematic and a detailed top view of a mass production line for silicon wafer edge passivation provided in another embodiment of the present invention. In this embodiment, the production line includes: a hot-wire CVD process stage assembly 1, a silicon wafer loading system 2 and a silicon wafer unloading system 3 integrally configured with a shared silicon wafer loading and unloading assembly 10, a first carrier plate rotation assembly 8 and a second carrier plate rotation assembly 9 on the left and right sides of the process stage assembly 1, and a carrier plate conveying assembly 11 between the first carrier plate rotation assembly 8 and the second carrier plate rotation assembly 9.

[0072] The hot-filament CVD process stage assembly 1 is used to deposit a passivation film layer on the edge of a silicon wafer. The hot-filament CVD process stage assembly 1 includes a feed chamber 12, a first process chamber 13, a second process chamber 14, and an output chamber 15. A vertical carrier plate (dual carrier plate) received on both sides of a first carrier plate rotation assembly 8 enters the feed chamber 12 of the process stage assembly 1. The vertical carrier plate undergoes a transition within the feed chamber 12. Once the feed chamber 12 reaches a predetermined vacuum condition, the vertical carrier plate is pushed into the first process chamber 13, where a first thin film, an a-Si:H film, is deposited. After completion, the vertical carrier plate is pushed into the second process chamber 14, where a second thin film, a SiN film, is deposited. x :H film or SiN x O y The H film layer is formed, thus creating a composite passivation film layer. After the coating is completed, the vertical carrier plate is pushed into the discharge chamber 15. After the vacuum in the discharge chamber 15 is broken, the vertical carrier plate is pushed onto the second carrier plate rotary assembly 9.

[0073] The silicon wafer loading system 2 is used to load silicon wafers onto a carrier plate. The silicon wafer loading system 2 includes a silicon wafer loading and packaging assembly 4 and a silicon wafer unloading assembly 10 shared with the silicon wafer unloading system 3. The silicon wafer loading and packaging assembly 4 receives finished silicon wafers, removes them, and places them into pre-set passivation packaging boxes. The silicon wafer unloading assembly 10 picks up a passivation packaging box filled with silicon wafers and places it onto the vertical carrier plate of the carrier plate conveying assembly 11.

[0074] The silicon wafer unloading system 3 is used to recover edge-passivated silicon wafers from the carrier. The silicon wafer unloading system 3 includes a silicon wafer loading / unloading assembly 10 and a silicon wafer unloading and recycling assembly 7, shared with the silicon wafer loading system 2. The silicon wafer loading / unloading assembly 10 places completed passivated packaging boxes into the silicon wafer unloading and recycling assembly 7, and picks up empty passivated packaging boxes from the silicon wafer unloading and recycling assembly 7 and places them into the silicon wafer loading and packaging assembly 4. The silicon wafer unloading and recycling assembly 7 receives completed passivated packaging boxes transferred from the silicon wafer loading / unloading assembly 10, removes the silicon wafers from the completed passivated packaging boxes, and packages the silicon wafers.

[0075] The first carrier plate rotation assembly 8 is located on the entrance side of the process stage assembly 1 and adjacent to the silicon wafer loading system 2. The two sides of the first carrier plate rotation assembly 8 receive vertical carrier plates and then transport the vertical carrier plates into the process stage assembly 1. The carrier plates are vertical on the carrier plate conveying assembly 11, and the side of the vertical carrier plate on which the silicon wafer is placed faces the silicon wafer loading and unloading assembly 10. The silicon wafer loading and unloading assembly 10 can grab the silicon wafer and place it on the vertical carrier plate. One vertical carrier plate is transported from the carrier plate conveying assembly 11 to the first carrier plate rotation assembly 8. The first carrier plate rotation assembly 8 rotates 180° to wait for another vertical carrier plate. After the two sides of the first carrier plate rotation assembly 8 have received the vertical carrier plates, the two vertical carrier plates move forward together, parallel to the cavity structure of the process stage assembly 1, and directly enter the process stage assembly 1.

[0076] After the two vertical carrier plates have completed the coating deposition in the process stage assembly 1, one vertical carrier plate comes out of the process stage assembly 1 and is transported to the second carrier plate rotation assembly 9. The second carrier plate rotation assembly 9 rotates 180° and waits to receive the other vertical carrier plate. After receiving one vertical carrier plate on each side of the second carrier plate rotation assembly 9, the two carrier plates are transported to the carrier plate conveying assembly 11.

[0077] The carrier plate transport assembly 11 is disposed between the first carrier plate rotary assembly 8 and the second carrier plate rotary assembly 9 and configured to circulate vertical carrier plates between the two. The carrier plate transport assembly 11 automatically conveys vertical carrier plates filled with passivated silicon wafers to the first carrier plate rotary assembly 8 and receives vertical carrier plates from the second carrier plate rotary assembly 9.

[0078] Refer again Figures 3-4 As shown, the specific process when using the above production line is as follows (e.g.) Figure 3 (As indicated by the thick black arrow in the image):

[0079] A box of finished silicon wafers is transported by conveyor belt to the silicon wafer loading and packaging component 4 of the silicon wafer loading system 2. The silicon wafer loading and packaging component 4 takes out the finished silicon wafers and puts them into the passivation packaging box, and the silicon wafers are placed horizontally.

[0080] The silicon wafer loading and unloading assembly 10 (e.g., a six-axis robot or other similar mechanism) picks up the passivation packaging box filled with silicon wafers and places it on the vertical carrier plate of the carrier plate conveying assembly 11. The carrier plate conveying assembly 11 conveys the vertical carrier plate to the first carrier plate rotating assembly 8. One side of the first carrier plate rotating assembly 8 receives a vertical carrier plate. The first carrier plate rotating assembly 8 rotates 180°, and the carrier plate conveying assembly 11 continues to convey the vertical carrier plate to the first carrier plate rotating assembly 8. The other side of the first carrier plate rotating assembly 8 receives another vertical carrier plate, realizing dual carrier plate transportation.

[0081] The first carrier plate rotation assembly 8 transports the vertical double carrier plates to the side of the feeding chamber 12 of the process table assembly 1. After the vacuum in the feeding chamber is broken, the first carrier plate rotation assembly 8 pushes the double carrier plates into the feeding chamber 12.

[0082] The silicon wafers on the dual carrier plates undergo a transition in the feed chamber 12. Once the feed chamber 12 reaches the predetermined vacuum condition, the dual carrier plates are pushed into the first process chamber 13. In the first process chamber 13, the first thin film, an a-Si:H film, is deposited. After this, the carrier plates are pushed into the second process chamber 14 to deposit the second thin film, a SiN film. x :H or SiN x O y :H film layer, after coating, push the double carrier plate into the discharge chamber 15.

[0083] After the vacuum in the discharge chamber 15 is broken, the vertical double carrier plate that has completed coating is pushed into the second carrier plate rotating assembly 9. One side of the second carrier plate rotating assembly receives one vertical carrier plate that has completed coating, and then the second carrier plate rotating assembly 9 rotates 180° to receive the other vertical carrier plate that has completed coating.

[0084] The second carrier plate rotation assembly 9 transports the vertical carrier plate to the side of the carrier plate conveying assembly 11 and pushes one side of the vertical carrier plate into the carrier plate conveying assembly 11. After the second carrier plate rotation assembly rotates 180°, it pushes the other side of the vertical carrier plate into the carrier plate conveying assembly 11. The silicon wafer loading and unloading assembly 10 puts the passivation chemical packaging box after coating on the carrier plate conveying assembly 11 into the silicon wafer unloading and recycling assembly 7. The silicon wafer unloading and recycling assembly 7 takes out the silicon wafers from the passivation chemical packaging box after the process and packages the silicon wafers.

[0085] The silicon wafer loading and unloading assembly 10 transports the empty passivated chemical packaging box after the silicon wafer is removed to the silicon wafer loading and packaging assembly 4.

[0086] Repeat the above process to perform automated operations in a loop, thereby achieving edge passivation of mass-produced silicon wafers.

[0087] Therefore, as can be seen from the above embodiments 1-2, the mass production line for silicon wafer edge passivation provided by the present invention can achieve passivation and continuous deposition of intrinsic a-Si:H+SiN at low temperatures (the temperature of the silicon wafer cannot exceed 250°C) without breaking the vacuum on a single machine. x :H (or SiN) x O y:H) Composite film layer. This invention uses hot-wire CVD technology to passivate the edges of silicon wafers. An automated silicon wafer loading and packaging assembly enables automatic collection and placement of silicon wafers. Vertical carrier plate fixing and a dual carrier plate layout double the production capacity. Multiple process chambers allow for the deposition of various film layers on silicon wafers without breaking the vacuum. Furthermore, the production line of this invention features strong integrated design. The carrier plate conveying assembly integrates carrier plate feeding, discharging, and recycling. Separate silicon wafer loading and unloading assemblies, as well as the integrated silicon wafer loading and unloading assembly, integrate passivation and packaging loading, unloading, and recycling. Moreover, this invention's production line has high capacity and strong scalability; upgrading the line only requires adding a small number of process chamber devices.

[0088] Furthermore, the production line layout described above effectively reduces the space occupied by automated equipment, minimizes the area of ​​solar cells exposed to air, reduces the space required for cleanrooms, and lowers operating costs. Moreover, by utilizing available space, the production line layout of this invention allows for an increase in the number of process equipment within a limited width, further enhancing the overall production line capacity.

[0089] In summary, the production line of the present invention features simple and smooth automation, strong integrated design, and the ability to deposit multiple film layers on the edges of silicon wafers on both sides of the carrier board, thereby doubling the production capacity.

[0090] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to the process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0091] The above description is merely an embodiment of the present invention, which enables those skilled in the art to understand and implement the invention. Various modifications to the embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the invention is not to be limited to the embodiments described herein, but is to be accorded the widest scope consistent with the principles and features disclosed herein.

Claims

1. A production line for mass production of silicon wafer edge passivation, characterized in that, include: A hot-filament CVD process stage assembly is configured to deposit a passivation film layer on the edge of a silicon wafer. The process stage assembly includes a feed chamber, multiple process chambers, and an output chamber. The multiple process chambers include a first process chamber and a second process chamber. Under vacuum conditions, an a-Si:H film layer is deposited on the edge of a silicon wafer on a vertical carrier plate within the first process chamber, and SiN is deposited on the a-Si:H film layer within the second process chamber under vacuum conditions. x :H film or SiN x O y :H film layer; A silicon wafer loading system and a silicon wafer unloading system are provided. The silicon wafer loading system is configured to load silicon wafers onto a vertical carrier plate, and the silicon wafer unloading system is configured to retrieve silicon wafers with passivated edges from the vertical carrier plate. The silicon wafer loading system and the silicon wafer unloading system are set up independently, or the silicon wafer loading system and the silicon wafer unloading system are set up as a whole by sharing silicon wafer loading and unloading components. A first carrier plate rotary assembly and a second carrier plate rotary assembly are provided. The first carrier plate rotary assembly is located on the inlet side of the process stage assembly and adjacent to the silicon wafer loading system. Both sides of the first carrier plate rotary assembly receive vertical carrier plates loaded with silicon wafers and transport the vertical carrier plates into the process stage assembly. The second carrier plate rotary assembly is located on the outlet side of the process stage assembly and adjacent to the silicon wafer unloading system. Both sides of the second carrier plate rotary assembly receive vertical carrier plates exiting from the process stage assembly and transport the vertical carrier plates into the silicon wafer unloading system. The silicon wafer loading system includes a silicon wafer loading and packaging assembly and a silicon wafer loading assembly. The silicon wafer loading and packaging assembly places silicon wafers in passivation kits. The silicon wafer loading assembly loads passivation kits filled with silicon wafers onto the vertical carrier plate of the first carrier plate rotary assembly and places empty passivation kits on the vertical carrier plate of the first carrier plate rotary assembly onto the silicon wafer loading and packaging assembly. A carrier plate conveying assembly is disposed between a first carrier plate rotating assembly and a second carrier plate rotating assembly and configured to circulate vertical carrier plates between the two.

2. The production line for mass production of silicon wafer edge passivation according to claim 1, characterized in that, The silicon wafer feeding system includes a silicon wafer feeding assembly and a silicon wafer feeding and recycling assembly. The silicon wafer feeding assembly places passivation packaging boxes from the vertical carrier plate of the second carrier plate rotation assembly onto the silicon wafer feeding and recycling assembly, and places empty passivation packaging boxes from the silicon wafer feeding and recycling assembly onto the vertical carrier plate of the second carrier plate rotation assembly. The silicon wafer feeding and recycling assembly removes the silicon wafers from the passivation packaging boxes and packages them. The vertical carrier plate of the empty passivation packaging boxes on the second carrier plate rotation assembly is transported to the first carrier plate rotation assembly by the carrier plate conveying assembly.

3. The production line for mass production of silicon wafer edge passivation according to claim 2, characterized in that, The first carrier plate rotation assembly rotates 180° to receive a vertical carrier plate on each of its two sides. The first carrier plate rotation assembly rotates 90° so that the side of one vertical carrier plate on which the silicon wafer is placed faces the silicon wafer loading assembly, thus completing the loading of the passivation packaging box filled with silicon wafers. The first carrier plate rotation assembly rotates 180° again so that the side of the other vertical carrier plate on which the silicon wafer is placed faces the silicon wafer loading assembly, thus completing the loading of the passivation packaging box filled with silicon wafers. After the two vertical carrier plates are loaded, the first carrier plate rotation assembly rotates 90° again and transports the two vertical carrier plates into the process stage assembly. The second carrier plate rotation assembly rotates 180° to receive a vertical carrier plate from the process stage assembly on each of its two sides. The second carrier plate rotation assembly rotates 90° so that the silicon wafer-placed side of one of the vertical carrier plates faces the silicon wafer unloading assembly and completes the passivation packaging retrieval. The second carrier plate rotation assembly rotates 180° again so that the silicon wafer-placed side of the other vertical carrier plate faces the silicon wafer unloading assembly and completes the passivation packaging retrieval. After the two vertical carrier plates are retrieved, the second carrier plate rotation assembly rotates 90° again and transports the two vertical carrier plates to the carrier plate conveying assembly.

4. The production line for mass production of silicon wafer edge passivation according to claim 1, characterized in that, The silicon wafer loading system further includes a silicon wafer loading and packaging assembly, wherein the silicon wafer loading and packaging assembly places the silicon wafers in passivation packaging boxes, the silicon wafer unloading assembly loads the passivation packaging boxes filled with silicon wafers onto the vertical carrier plate of the carrier plate conveying assembly, and the carrier plate conveying assembly transports the vertical carrier plate filled with the passivation packaging boxes of silicon wafers to the first carrier plate rotary assembly.

5. The production line for mass production of silicon wafer edge passivation according to claim 4, characterized in that, The silicon wafer unloading system also includes a silicon wafer unloading and recycling component. The second carrier plate rotation component transports the passivated vertical carrier plate to the carrier plate conveying component. The silicon wafer unloading and loading component places the passivated packaging boxes on the passivated vertical carrier plate on the carrier plate conveying component onto the silicon wafer unloading and recycling component and places the empty passivated packaging boxes on the silicon wafer unloading and recycling component onto the silicon wafer loading and packaging component. The silicon wafer unloading and recycling component removes the silicon wafers from the passivated packaging boxes and packages them.

6. The production line for mass production of silicon wafer edge passivation according to claim 5, characterized in that, The first carrier plate rotation assembly rotates 180° to receive a vertical carrier plate on each of its two sides, and transports the two vertical carrier plates into the process table assembly; the second carrier plate rotation assembly rotates 180° to receive a vertical carrier plate exiting from the process table assembly on each of its two sides.

Citation Information

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