Integrated structure of power amplifier and circularly polarized antenna

Abstract

The invention discloses a power amplifier and circularly polarized antenna integrated structure which comprises a power amplifier and an antenna which are integrated together, and the antenna is a circularly polarized antenna. The input impedance of the antenna is directly matched with the output impedance of the power amplifier at the center frequency 1.9 GHz and the center frequency 2.6 GHz through the feed point position of the microstrip line in the antenna and the impedance of the microstrip line; the dual-frequency dual-band antenna has the advantages of being small in occupied size, high in integration level, small in transmission loss, high in transmission efficiency in high-frequency, broadband and high-power application scenes, capable of achieving dual-frequency work and capable of meeting the requirements of a wireless communication system for multi-frequency and high-quality transmission.

Description

Technical Field

[0001] The present invention relates to an integrated structure, and more particularly to an integrated structure of a power amplifier and a circularly polarized antenna. Background Art

[0002] With the increasing demands of wireless communication systems for miniaturization, high integration, and high performance, the integrated design of power amplifiers and antennas has gradually become a trend. The integrated design of power amplifiers and antennas not only effectively saves space but also improves the working efficiency and reliability of wireless communication systems. Especially in fields such as mobile communication and satellite communication with high requirements, the integrated design of power amplifiers and antennas can meet the comprehensive requirements for bandwidth, power, and volume, and has broad application prospects.

[0003] In existing integrated structures of power amplifiers and antennas, the power amplifier and the antenna are usually designed independently and then integrated. However, due to the independent design of the power amplifier and the antenna, it is difficult to match their impedances. Therefore, an additional matching circuit is required in the existing integrated structure of the power amplifier and the antenna to achieve impedance matching between the power amplifier and the antenna. This approach results in a relatively large overall occupied volume, low integration, and significant transmission losses in the matching circuit. In high-frequency, broadband, and high-power application scenarios, the overall efficiency of the existing integrated structure of the power amplifier and the antenna is reduced. Especially in the case of high-power output, the efficiency and linearity of the power amplifier may be inhibited, and the performance of the power amplifier cannot be fully exerted, thereby affecting the radiation effect of the antenna and ultimately affecting the signal quality and the stability of the wireless communication system. In addition, in the existing integrated structure of the power amplifier and the antenna, the power amplifier and the antenna can only achieve impedance matching at a single frequency, that is, the existing integrated structure of the power amplifier and the antenna can only operate at a single frequency. In actual applications, communication systems usually need to operate within multiple frequency ranges to adapt to different communication standards or requirements. Therefore, the existing integrated structure of the power amplifier and the antenna is difficult to meet the requirements of wireless communication systems for multi-frequency and high-quality transmission. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide an integrated structure of a power amplifier and a circularly polarized antenna that has a relatively small occupied volume, high integration, small transmission losses, achieves high transmission efficiency in high-frequency, broadband, and high-power application scenarios, can operate at dual frequencies, and meets the requirements of wireless communication systems for multi-frequency and high-quality transmission.

[0005] The technical solution adopted by the present invention to solve the above technical problems is as follows: An integrated structure of a power amplifier and a circularly polarized antenna, including a power amplifier and an antenna integrated together. The antenna is a circularly polarized antenna, and the input impedance of the antenna is directly matched with the output impedance of the power amplifier at the center frequencies of 1.9 GHz and 2.6 GHz through the position of the internal microstrip line feeding point and the microstrip line impedance of the antenna.

[0006] Compared with the prior art, the advantages of the present invention are that the antenna is realized by adopting a circularly polarized antenna, and the input impedance of the antenna is directly matched with the output impedance of the power amplifier at the center frequencies of 1.9 GHz and 2.6 GHz through the position of the internal microstrip line feeding point and the microstrip line impedance of the antenna. Therefore, in the integrated structure of the power amplifier and the circularly polarized antenna, there is no need to additionally add a matching circuit for impedance matching between the power amplifier and the antenna, and the power amplifier and the antenna can be directly integrated, with a high degree of integration. This not only reduces the overall size of the integrated structure of the power amplifier and the circularly polarized antenna, but also reduces the signal transmission loss. At the same time, since the power amplifier and the antenna achieve impedance matching at two center frequencies, the integrated structure of the power amplifier and the circularly polarized antenna can operate in two high-frequency bands. Therefore, the present invention has a small occupied volume, a high degree of integration, and a small transmission loss, and has a high transmission efficiency in high-frequency, broadband, and high-power application scenarios, and can achieve dual-frequency operation, meeting the requirements of wireless communication systems for multi-frequency and high-quality transmission.

[0007] Further, the power amplifier includes an input matching circuit, a first bias circuit, a second bias circuit, a transistor, and a DC-blocking output circuit. The input matching circuit has an input terminal, an output terminal, and a bias terminal. The first bias circuit has an input terminal and an output terminal. The DC-blocking output circuit has a connection terminal. The second bias circuit has an input terminal, a first output terminal, and a second output terminal. The input terminal of the input matching circuit is the input terminal of the power amplifier. The output terminal of the input matching circuit is connected to the gate of the transistor. The bias terminal of the input matching circuit is connected to the output terminal of the first bias circuit. The drain of the transistor is connected to the first output terminal of the second bias circuit. The source of the transistor is grounded. The second output terminal of the second bias circuit is connected to the connection terminal of the DC-blocking output circuit, and the connection terminal is the output terminal of the power amplifier. The input terminal of the power amplifier is used to access an external signal. The output terminal of the power amplifier is connected to the antenna. The input terminal of the first bias circuit is used to connect to an external power supply to access a first power supply voltage. The first bias circuit is used to convert the accessed first power supply voltage into a first bias voltage and load it on the gate of the transistor. The input terminal of the second bias circuit is used to connect to an external power supply to access a second power supply voltage. The second bias circuit is used to convert the accessed second power supply voltage into a second bias voltage and load it on the drain of the transistor. The first bias voltage and the second bias voltage are used to make the transistor operate in the AB class state.

[0008] Further, the first bias circuit includes four microstrip lines, four capacitors and a resistor; the four microstrip lines are respectively referred to as the first microstrip line, the second microstrip line, the third microstrip line and the fourth microstrip line, the third microstrip line is an arc-shaped microstrip line, the first microstrip line, the second microstrip line and the fourth microstrip line are all rectangular microstrip lines, the four capacitors are respectively referred to as the first capacitor, the second capacitor, the third capacitor and the fourth capacitor, the resistor is referred to as the first resistor, one end of the first microstrip line is the input end of the first bias circuit, the other end of the first microstrip line is connected to one end of the second microstrip line, the other end of the second microstrip line is connected to one end of the third microstrip line, the other end of the third microstrip line is connected to one end of the fourth microstrip line, the other end of the fourth microstrip line is connected to one end of the first resistor, the other end of the first resistor is the output end of the first bias circuit, one end of the first capacitor, one end of the second capacitor, one end of the third capacitor and one end of the fourth capacitor are all connected to one side of the second microstrip line, the other ends of the first capacitor, the second capacitor, the third capacitor and the fourth capacitor are all grounded, and the total length of the second microstrip line, the third microstrip line and the fourth microstrip line is one-quarter wavelength.

[0009] Further, the input matching circuit includes eight microstrip lines, two capacitors and a resistor; the eight microstrip lines are respectively referred to as the fifth microstrip line, the sixth microstrip line, the seventh microstrip line, the eighth microstrip line, the ninth microstrip line, the tenth microstrip line, the eleventh microstrip line and the twelfth microstrip line, wherein the fifth microstrip line, the sixth microstrip line, the seventh microstrip line, the eighth microstrip line, the ninth microstrip line, the tenth microstrip line and the twelfth microstrip line are all rectangular microstrip lines, the eleventh microstrip line is a T-shaped junction microstrip line with three connection ends, the two capacitors are respectively referred to as the fifth capacitor and the sixth capacitor, the resistor is referred to as the second resistor, one end of the fifth microstrip line is the input end of the input matching circuit, the other end of the fifth microstrip line is connected to one end of the fifth capacitor, the other end of the fifth capacitor is connected to one end of the sixth microstrip line, the other end of the sixth microstrip line is connected to one end of the seventh microstrip line, the other end of the seventh microstrip line is connected to one end of the eighth microstrip line, the other end of the eighth microstrip line is connected to one end of the ninth microstrip line, the other end of the ninth microstrip line is respectively connected to one end of the second resistor and one end of the sixth capacitor, the other end of the second resistor and the other end of the sixth capacitor are connected to one end of the tenth microstrip line, the other end of the tenth microstrip line is connected to the first connection end of the eleventh microstrip line, the second connection end of the eleventh microstrip line is the bias end of the input matching circuit, the third connection end of the eleventh microstrip line is connected to one end of the twelfth microstrip line, and the other end of the twelfth microstrip line is the output end of the input matching circuit.

[0010] Further, the second bias circuit includes five microstrip lines and four capacitors. The five microstrip lines are respectively referred to as the thirteenth microstrip line, the fourteenth microstrip line, the fifteenth microstrip line, the sixteenth microstrip line, and the seventeenth microstrip line. The thirteenth microstrip line is an arc-shaped microstrip line, and the fourteenth microstrip line, the fifteenth microstrip line, the sixteenth microstrip line, and the seventeenth microstrip line are all rectangular microstrip lines. The four capacitors are respectively referred to as the seventh capacitor, the eighth capacitor, the ninth capacitor, and the tenth capacitor. One end of the fifteenth microstrip line is the input end of the second bias circuit. The other end of the fifteenth microstrip line is connected to one side of the sixteenth microstrip line. One end of the thirteenth microstrip line is connected to one end of the sixteenth microstrip line. The other end of the thirteenth microstrip line is connected to one end of the fourteenth microstrip line. The other end of the fourteenth microstrip line is the first output end of the second bias circuit. The other side of the sixteenth microstrip line is the second output end of the second bias circuit. The other end of the sixteenth microstrip line is connected to one end of the seventeenth microstrip line. One end of the seventh capacitor, one end of the eighth capacitor, one end of the ninth capacitor, and one end of the tenth capacitor are all connected to the other end of the seventeenth microstrip line, and the connection end is the input end of the second bias circuit. The other end of the seventh capacitor, the other end of the eighth capacitor, the other end of the ninth capacitor, and the other end of the tenth capacitor are all grounded. The total length of the sixteenth microstrip line, the thirteenth microstrip line, and the fourteenth microstrip line is a quarter wavelength.

[0011] Further, the DC-blocking output circuit includes a capacitor, which is referred to as the eleventh capacitor. One end of the eleventh capacitor is the connection end of the DC-blocking output circuit, and the other end of the eleventh capacitor is grounded.

[0012] Further, the antenna includes a dielectric substrate, a radiation patch, and a metal ground. The dielectric substrate is in the shape of a cuboid. The direction along the length of the dielectric substrate is defined as the front-back direction, the direction along the width is defined as the left-right direction, and the direction along the height is defined as the up-down direction. The length of the dielectric substrate is equal to its width. The plane that makes the dielectric substrate symmetric about the left and right is called the first symmetry plane, and the plane that makes the dielectric substrate symmetric about the front and back is called the second symmetry plane. The radiation patch includes four rectangular metal patches and an isosceles trapezoidal metal patch attached to the upper end face of the dielectric substrate. These four rectangular metal patches are respectively called the first rectangular patch, the second rectangular patch, the third trapezoidal patch, and the fourth rectangular patch. The length of the first rectangular patch is along the front-back direction, the width is along the left-right direction, and the thickness is along the up-down direction. The right end face of the first rectangular patch is located on the right side of the first symmetry plane and on the left side of the plane where the right end face of the dielectric substrate is located. There is a certain distance between the right end face of the first rectangular patch and the right side of the first symmetry plane and the plane where the right end face of the dielectric substrate is located respectively. The left end face of the first rectangular patch is located on the left side of the first symmetry plane and on the right side of the plane where the left end face of the dielectric substrate is located. There is a certain distance between the left end face of the first rectangular patch and the left side of the first symmetry plane and the right side of the plane where the left end face of the dielectric substrate is located respectively. The front end face of the first rectangular patch is located on the rear side of the plane where the front end face of the dielectric substrate is located, and there is a certain distance between them. The rear end face of the first rectangular patch is located on the front side of the second symmetry plane, and there is a certain distance between them.The length of the second rectangular patch is along the front-back direction, the width is along the left-right direction, and the thickness is along the up-down direction. The second rectangular patch is located at the rear side of the first rectangular patch. The front end face of the second rectangular patch is connected to and in contact with the rear end face of the first rectangular patch. The width of the second rectangular patch is less than the width of the first rectangular patch. The left end face of the second rectangular patch and the left end face of the first rectangular patch are in the same plane. The second rectangular patch is symmetric about the first symmetry plane. Two semi-circular through holes with the same radius are recessed rightward from the left end face of the second rectangular patch. These two semi-circular through holes are respectively referred to as the first semi-circular through hole and the second semi-circular through hole. The first semi-circular through hole is located at the rear side of the front end face of the second rectangular patch, and there is a distance between them. The first semi-circular through hole is located at the left side of the first symmetry plane, and there is a distance between them. The second semi-circular through hole is located at the rear side of the first semi-circular through hole, and there is a distance between them. The rear end face of the second rectangular patch is tangent to the second semi-circular through hole. Two semi-circular through holes with the same radius are recessed leftward from the right end face of the second rectangular patch. These two semi-circular through holes are respectively referred to as the third semi-circular through hole and the fourth semi-circular through hole. The first semi-circular through hole and the third semi-circular through hole are symmetric about the first symmetry plane. The second semi-circular through hole and the fourth semi-circular through hole are symmetric about the first symmetry plane. The isosceles trapezoidal metal patch is located at the rear side of the second rectangular patch. The isosceles trapezoidal metal patch is symmetric about the first symmetry plane. The cross-section of the isosceles trapezoidal metal patch is an isosceles trapezoid, and the lower base and the upper base of the isosceles trapezoid are both parallel to the plane where the front end face of the dielectric substrate is located, and its lower base is located at the front side of its upper base. The front end face of the isosceles trapezoidal metal patch completely coincides with the rear end face of the second rectangular patch. The third rectangular patch is located at the rear side of the isosceles trapezoidal metal patch. The length of the third rectangular patch is along the front-back direction, the width is along the left-right direction, and the thickness is along the up-down direction. The third rectangular patch is symmetric about the first symmetry plane. The width of the third rectangular patch is equal to the width of the rear end face of the isosceles trapezoidal metal patch along the left-right direction. The front end face of the third rectangular patch is connected to and in contact with the rear end face of the isosceles trapezoidal metal patch. The rear end face of the third rectangular patch is located at the front side of the plane where the rear end face of the dielectric substrate is located.The length of the fourth rectangular patch is along the front-rear direction, the width is along the left-right direction, and the thickness is along the up-down direction. The fourth rectangular patch is located on the left side of the third rectangular patch. The right end face of the fourth rectangular patch is connected and in a fitting state with the left end face of the third rectangular patch. The left end face of the fourth rectangular patch is located between the plane of the left end face of the dielectric substrate and the plane of the left end face of the second rectangular patch. The front end face of the fourth rectangular patch is located behind the plane of the front end face of the third rectangular patch. The rear end face of the fourth rectangular patch and the rear end face of the third rectangular patch are in the same plane. The metal ground includes a rectangular metal block, a fan-shaped metal block, two right-angled triangular metal blocks, and a circular groove opened on the rectangular metal block. The rectangular metal block is attached to the lower surface of the dielectric substrate. The length of the rectangular metal block is along the front-rear direction, the width is along the left-right direction, and the thickness is along the up-down direction. The front end face of the rectangular metal block and the front end face of the dielectric substrate are in the same plane. The rear end face of the rectangular metal block and the rear end face of the dielectric substrate are in the same plane. The left end face of the rectangular metal block and the left end face of the dielectric substrate are in the same plane. The right end face of the rectangular metal block and the right end face of the dielectric substrate are in the same plane. The circular groove penetrates the rectangular metal block up and down, and the center line of the circular groove coincides with the vertical axis of the rectangular metal block. The fan-shaped metal block is located inside the circular groove and is attached to the lower end face of the dielectric substrate. The cross-section of the fan-shaped metal block is a sector. The surface where the arc of the cross-section of the fan-shaped metal block is located is called the arc surface of the fan-shaped metal block. The two surfaces where the two radii of the cross-section of the fan-shaped metal block are located are respectively called the first side surface and the second side surface of the fan-shaped metal block. The fan-shaped metal block is symmetric about the first symmetry plane. The first side surface of the fan-shaped metal block is located on the left side of the first symmetry plane. The second side surface of the fan-shaped metal block is located on the right side of the first symmetry plane. The arc surface of the fan-shaped metal block coincides with the circumferential surface of the circular groove. The center of the cross-section of the fan-shaped metal block is located on the first symmetry plane. The center of the cross-section of the fan-shaped metal block is located in front of the plane of the front end face of the first rectangular patch, and there is a distance between them. The two right-angled triangular metal blocks are respectively called the first triangular metal block and the second triangular metal block. The cross-section of the first triangular metal block is a right-angled triangle. The side surface where the hypotenuse of the right-angled triangle of the first triangular metal block is located is called the inclined surface of the first triangular metal block. The two side surfaces where the two right-angled sides of the right-angled triangle of the first triangular metal block are located are respectively called the first right-angled surface and the second right-angled surface of the first triangular metal block.The first triangular metal block is located inside the circular groove and attached to the lower end face of the dielectric substrate. The first triangular metal block is located on the left side of the sector-shaped metal block, and the inclined surface of the first triangular metal block completely coincides with the first side surface of the sector-shaped metal block; the extending direction of the first right-angle surface of the first triangular metal block is along the radial direction of the sector-shaped metal block; the second triangular metal block is located on the right side of the sector-shaped metal block, and the first triangular metal block and the second triangular metal block are symmetrical about the first symmetry plane; twice the included angle between the first right-angle surface and the inclined surface of the first triangular metal block plus the central angle of the sector-shaped metal block is equal to 90 degrees. Description of the Drawings

[0013] Figure 1 It is a schematic structural diagram of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention;

[0014] Figure 2 It is a structural diagram of the power amplifier of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention;

[0015] Figure 3(a) is a top view of the antenna of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention;

[0016] Figure 3(b) is a bottom view of the antenna of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention (perspective to the upper end face of the dielectric substrate);

[0017] Figure 3(c) is a bottom view of the antenna of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention (without perspective);

[0018] Figure 3(d) is a side view of the antenna of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention;

[0019] Figure 4(a) is the normalized radiation pattern of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention in the horizontal plane;

[0020] Figure 4(b) is the normalized radiation pattern of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention in the vertical plane;

[0021] Figure 5 It is a comparison diagram of PAE and frequency between the integrated structure of the power amplifier and the circularly polarized antenna of the present invention and the traditional cascade;

[0022] Figure 6 It is a comparison diagram of PAE and output power between the integrated structure of the power amplifier and the circularly polarized antenna of the present invention and the traditional cascade;

[0023] Figure 7The simulation AR diagram of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention. Detailed implementation manners

[0024] The present invention will be further described in detail below in conjunction with the embodiments with reference to the drawings.

[0025] Embodiment 1: As Figure 1 shown, an integrated structure of a power amplifier and a circularly polarized antenna includes a power amplifier 1 and an antenna 2 integrated together. The antenna 2 is a circularly polarized antenna. The antenna 2 directly matches its input impedance with the output impedance of the power amplifier 1 at the center frequencies of 1.9 GHz and 2.6 GHz through the position of the internal microstrip line feeding point and the microstrip line impedance of the antenna.

[0026] In this embodiment, the antenna 2 is realized by adopting a circularly polarized antenna, and the input impedance of the antenna 2 is directly matched with the output impedance of the power amplifier 1 at the center frequencies of 1.9 GHz and 2.6 GHz through the position of the internal microstrip line feeding point and the microstrip line impedance of the antenna. Therefore, in the integrated structure of the power amplifier and the circularly polarized antenna, no additional matching circuit is required for impedance matching between the power amplifier 1 and the antenna 2. The power amplifier 1 and the antenna 2 can be directly integrated, with a high degree of integration. This not only reduces the overall size of the integrated structure of the power amplifier and the circularly polarized antenna, but also reduces the signal transmission loss. At the same time, since the power amplifier 1 and the antenna 2 achieve impedance matching at two center frequencies, the integrated structure of the power amplifier and the circularly polarized antenna can operate in two high-frequency bands.

[0027] Embodiment 2: This embodiment is basically the same as Embodiment 1, the difference being that: As Figure 2As shown, in this embodiment, the power amplifier 1 includes an input matching circuit 3, a first bias circuit 4, a second bias circuit 5, a transistor P1, and a DC-blocking output circuit 6. The input matching circuit 3 has an input terminal, an output terminal, and a bias terminal. The first bias circuit 4 has an input terminal and an output terminal. The DC-blocking output circuit 6 has a connection terminal. The second bias circuit 5 has an input terminal, a first output terminal, and a second output terminal. The input terminal of the input matching circuit 3 is the input terminal of the power amplifier 1. The output terminal of the input matching circuit 3 is connected to the gate of the transistor P1. The bias terminal of the input matching circuit 3 is connected to the output terminal of the first bias circuit 4. The drain of the transistor P1 is connected to the first output terminal of the second bias circuit 5. The source of the transistor P1 is grounded. The second output terminal of the second bias circuit 5 is connected to the connection terminal of the DC-blocking output circuit 6, and the connection terminal is the output terminal of the power amplifier 1. The input terminal of the power amplifier 1 is used to connect to an external signal. The output terminal of the power amplifier 1 is connected to the antenna 2. The input terminal of the first bias circuit 4 is used to connect to an external power supply to access a first power supply voltage. The first bias circuit 4 is used to convert the accessed first power supply voltage into a first bias voltage and load it on the gate of the transistor P1. The input terminal of the second bias circuit 5 is used to connect to an external power supply to access a second power supply voltage. The second bias circuit 5 is used to convert the accessed second power supply voltage into a second bias voltage and load it on the drain of the transistor P1. The first bias voltage and the second bias voltage are used to make the transistor P1 operate in the AB class state.

[0028] In this embodiment, the first bias circuit 4 includes four microstrip lines, four capacitors, and one resistor. The four microstrip lines are respectively called the first microstrip line L1, the second microstrip line L2, the third microstrip line L3, and the fourth microstrip line L4. The third microstrip line L3 is an arc-shaped microstrip line. The first microstrip line L1, the second microstrip line L2, and the fourth microstrip line L4 are all rectangular microstrip lines. The four capacitors are respectively called the first capacitor C1, the second capacitor C2, the third capacitor C3, and the fourth capacitor C4. The resistor is called the first resistor RL1. One end of the first microstrip line L1 is the input terminal of the first bias circuit 4. The other end of the first microstrip line L1 is connected to one end of the second microstrip line L2. The other end of the second microstrip line L2 is connected to one end of the third microstrip line L3. The other end of the third microstrip line L3 is connected to one end of the fourth microstrip line L4. The other end of the fourth microstrip line L4 is connected to one end of the first resistor RL1. The other end of the first resistor RL1 is the output terminal of the first bias circuit 4. One end of the first capacitor C1, one end of the second capacitor C2, one end of the third capacitor C3, and one end of the fourth capacitor C4 are all connected to one side of the second microstrip line L2. The other end of the first capacitor C1, the other end of the second capacitor C2, the other end of the third capacitor C3, and the other end of the fourth capacitor C4 are all grounded. The total length of the second microstrip line L2, the third microstrip line L3, and the fourth microstrip line L4 is one-quarter wavelength.

[0029] In this embodiment, the input matching circuit 3 includes eight microstrip lines, two capacitors and a resistor; the eight microstrip lines are respectively referred to as the fifth microstrip line L5, the sixth microstrip line L6, the seventh microstrip line L7, the eighth microstrip line L8, the ninth microstrip line L9, the tenth microstrip line L10, the eleventh microstrip line L11 and the twelfth microstrip line L12. Among them, the fifth microstrip line L5, the sixth microstrip line L6, the seventh microstrip line L7, the eighth microstrip line L8, the ninth microstrip line L9, the tenth microstrip line L10 and the twelfth microstrip line L12 are all rectangular microstrip lines, and the eleventh microstrip line L11 is a T-shaped junction microstrip line with three connection ends. The two capacitors are respectively referred to as the fifth capacitor C5 and the sixth capacitor C6, and the resistor is referred to as the second resistor RL2. One end of the fifth microstrip line L5 is the input end of the input matching circuit 3, the other end of the fifth microstrip line L5 is connected to one end of the fifth capacitor C5, the other end of the fifth capacitor C5 is connected to one end of the sixth microstrip line L6, the other end of the sixth microstrip line L6 is connected to one end of the seventh microstrip line L7, the other end of the seventh microstrip line L7 is connected to one end of the eighth microstrip line L8, the other end of the eighth microstrip line L8 is connected to one end of the ninth microstrip line L9, the other end of the ninth microstrip line L9 is respectively connected to one end of the second resistor RL2 and one end of the sixth capacitor C6, the other end of the second resistor RL2 and the other end of the sixth capacitor C6 are connected to one end of the tenth microstrip line L10, the other end of the tenth microstrip line L10 is connected to the first connection end of the eleventh microstrip line L11, the second connection end of the eleventh microstrip line L11 is the bias end of the input matching circuit 3, the third connection end of the eleventh microstrip line L11 is connected to one end of the twelfth microstrip line L12, and the other end of the twelfth microstrip line L12 is the output end of the input matching circuit 3.

[0030] In this embodiment, the second bias circuit 5 includes five microstrip lines and four capacitors. The five microstrip lines are respectively referred to as the thirteenth microstrip line L13, the fourteenth microstrip line L14, the fifteenth microstrip line L15, the sixteenth microstrip line L16, and the seventeenth microstrip line L17. The thirteenth microstrip line L13 is an arc-shaped microstrip line, and the fourteenth microstrip line L14, the fifteenth microstrip line L15, the sixteenth microstrip line L16, and the seventeenth microstrip line L17 are all rectangular microstrip lines. The four capacitors are respectively referred to as the seventh capacitor C7, the eighth capacitor C8, the ninth capacitor C9, and the tenth capacitor C10. One end of the fifteenth microstrip line L15 is the input end of the second bias circuit 5. The other end of the fifteenth microstrip line L15 is connected to one side of the sixteenth microstrip line L16. One end of the thirteenth microstrip line L13 is connected to one end of the sixteenth microstrip line L16. The other end of the thirteenth microstrip line L13 is connected to one end of the fourteenth microstrip line L14. The other end of the fourteenth microstrip line L14 is the first output end of the second bias circuit 5. The other side of the sixteenth microstrip line L16 is the second output end of the second bias circuit 5. The other end of the sixteenth microstrip line L16 is connected to one end of the seventeenth microstrip line L17. One end of the seventh capacitor C7, one end of the eighth capacitor C8, one end of the ninth capacitor C9, and one end of the tenth capacitor C10 are all connected to the other end of the seventeenth microstrip line L17, and the connection end is the input end of the second bias circuit 5. The other end of the seventh capacitor C7, the other end of the eighth capacitor C8, the other end of the ninth capacitor C9, and the other end of the tenth capacitor C10 are all grounded. The total length of the sixteenth microstrip line L16, the thirteenth microstrip line L13, and the fourteenth microstrip line L14 is one-quarter wavelength.

[0031] In this embodiment, the DC-blocking output circuit 6 includes a capacitor, which is referred to as the eleventh capacitor C11. One end of the eleventh capacitor C11 is the connection end of the DC-blocking output circuit 6. The other end of the eleventh capacitor C11 is grounded.

[0032] In this embodiment, when the power amplifier 1 is operating, the first bias circuit 4 is connected to the first power supply voltage through the first microstrip line L1. The first power supply voltage is transmitted through the first microstrip line L1, the second microstrip line L2, the third microstrip line L3, and the fourth microstrip line L4, and the DC power supply energy forms a stable bias voltage for the gate of the transistor P1 through the eleventh microstrip line L11 and the twelfth microstrip line L12. The second bias circuit 5 is connected to the second power supply voltage through the seventeenth microstrip line L17. The second power supply voltage is transmitted to the drain of the transistor P1 through the microstrip transmission structure formed by the thirteenth microstrip line L13, the fourteenth microstrip line L14, the fifteenth microstrip line L15, the sixteenth microstrip line L16, and the seventeenth microstrip line L17, providing a stable bias voltage for the drain of the transistor P1 to ensure that the power amplifier 1 operates in the AB class state. When a low-power radio frequency (RF) signal is received at the input end of the input matching circuit 3, the RF signal first passes through the fifth capacitor C5, which acts as a DC blocking capacitor. The fifth capacitor C5 filters out the DC signal in the RF signal and then outputs it. At this time, the RF signal output from the fifth capacitor C5 to the microstrip structure formed by the sixth microstrip line L6, the seventh microstrip line L7, the eighth microstrip line L8, and the ninth microstrip line L9 does not contain a DC signal. The characteristic impedances and conductor widths of the seventh microstrip line L7, the eighth microstrip line L8, the ninth microstrip line L9, the tenth microstrip line L10, the eleventh microstrip line L11, and the twelfth microstrip line L12 can convert the output impedance of the transistor P1 into the system standard 50-ohm impedance to achieve maximum power transmission and minimum reflection loss. Then, the RF signal is transmitted to the stabilization circuit composed of the second resistor RL2 and the sixth capacitor C6, which prevents self-oscillation from occurring during the transmission of the RF signal and ensures the quality of the RF signal output. After passing through the transistor P1, the small signal input by the signal source is amplified into a high-power RF signal, and then the DC signal is isolated by the sixth capacitor and output to the antenna 2. Embodiment Three: This embodiment is basically the same as Embodiment Two, except that: As Figures 3(a) to 3(d)As shown, in this embodiment, the antenna 2 includes a dielectric substrate 7, a radiation patch 8, and a metal ground 9. The dielectric substrate 7 is in the shape of a cuboid. The direction along the length of the dielectric substrate 7 is defined as the front-back direction, the direction along the width is defined as the left-right direction, and the direction along the height is defined as the up-down direction. The length of the dielectric substrate 7 is equal to its width. The plane that makes the dielectric substrate 7 symmetric about the left and right is called the first symmetry plane a1, and the plane that makes the dielectric substrate 7 symmetric about the front and back is called the second symmetry plane a2. The radiation patch 8 includes four rectangular metal patches and an isosceles trapezoidal metal patch G5 attached to the upper end face of the dielectric substrate 7. These four rectangular metal patches are respectively called the first rectangular patch G1, the second rectangular patch G2, the third trapezoidal patch G3, and the fourth rectangular patch G4. The length of the first rectangular patch G1 is along the front-back direction, the width is along the left-right direction, and the thickness is along the up-down direction. The right end face of the first rectangular patch G1 is located on the right side of the first symmetry plane a1 and on the left side of the plane where the right end face of the dielectric substrate 7 is located. There is a certain distance between the right end face of the first rectangular patch G1 and the right side of the first symmetry plane a1 and the plane where the right end face of the dielectric substrate 7 is located respectively. The left end face of the first rectangular patch G1 is located on the left side of the first symmetry plane a1 and on the right side of the plane where the left end face of the dielectric substrate 7 is located. There is a certain distance between the left end face of the first rectangular patch G1 and the left side of the first symmetry plane a1 and the right side of the plane where the left end face of the dielectric substrate 7 is located respectively. The front end face of the first rectangular patch G1 is located on the rear side of the plane where the front end face of the dielectric substrate 7 is located, and there is a certain distance between them. The rear end face of the first rectangular patch G1 is located on the front side of the second symmetry plane a2, and there is a certain distance between them.The length of the second rectangular patch G2 is along the front-back direction, the width is along the left-right direction, and the thickness is along the up-down direction. The second rectangular patch G2 is located at the rear side of the first rectangular patch G1. The front end face of the second rectangular patch G2 is connected to and in contact with the rear end face of the first rectangular patch G1. The width of the second rectangular patch G2 is smaller than the width of the first rectangular patch G1. The left end face of the second rectangular patch G2 and the left end face of the first rectangular patch G1 are in the same plane. The second rectangular patch G2 is symmetric about the first symmetry plane a1. Two semi-circular through holes with the same radius are recessed rightward on the left end face of the second rectangular patch G2. These two semi-circular through holes are respectively called the first semi-circular through hole W1 and the second semi-circular through hole W2. The first semi-circular through hole W1 is located at the rear side of the front end face of the second rectangular patch G2, and there is a distance between them. The first semi-circular through hole W1 is located at the left side of the first symmetry plane a1, and there is a distance between them. The second semi-circular through hole W2 is located at the rear side of the first semi-circular through hole W1, and there is a distance between them. The rear end face of the second rectangular patch G2 is tangent to the second semi-circular through hole W2. Two semi-circular through holes with the same radius are recessed leftward on the right end face of the second rectangular patch G2. These two semi-circular through holes are respectively called the third semi-circular through hole W3 and the fourth semi-circular through hole W4. The first semi-circular through hole W1 and the third semi-circular through hole W3 are symmetric about the first symmetry plane a1. The second semi-circular through hole W2 and the fourth semi-circular through hole W4 are symmetric about the first symmetry plane a1. The isosceles trapezoidal metal patch G5 is located at the rear side of the second rectangular patch G2. The isosceles trapezoidal metal patch G5 is symmetric about the first symmetry plane a1. The cross-section of the isosceles trapezoidal metal patch G5 is an isosceles trapezoid, and the lower base and the upper base of this isosceles trapezoid are both parallel to the plane where the front end face of the dielectric substrate 7 is located, and its lower base is located at the front side of its upper base. The front end face of the isosceles trapezoidal metal patch G5 completely coincides with the rear end face of the second rectangular patch G2. The third rectangular patch G3 is located at the rear side of the isosceles trapezoidal metal patch G5. The length of the third rectangular patch G3 is along the front-back direction, the width is along the left-right direction, and the thickness is along the up-down direction. The third rectangular patch G3 is symmetric about the first symmetry plane a1. The width of the third rectangular patch G3 is equal to the width of the rear end face of the isosceles trapezoidal metal patch G5 along the left-right direction. The front end face of the third rectangular patch G3 is connected to and in contact with the rear end face of the isosceles trapezoidal metal patch G5. The rear end face of the third rectangular patch G3 is located at the front side of the plane where the rear end face of the dielectric substrate 7 is located.The length of the fourth rectangular patch G4 is along the front-back direction, the width is along the left-right direction, and the thickness is along the up-down direction. The fourth rectangular patch G4 is located on the left side of the third rectangular patch G3. The right end face of the fourth rectangular patch G4 is connected to and in contact with the left end face of the third rectangular patch G3. The left end face of the fourth rectangular patch G4 is located between the plane of the left end face of the dielectric substrate 7 and the plane of the left end face of the second rectangular patch G2. The front end face of the fourth rectangular patch G4 is located behind the plane of the front end face of the third rectangular patch G3. The rear end face of the fourth rectangular patch G4 and the rear end face of the third rectangular patch G3 are in the same plane; The metal ground 9 includes a rectangular metal block M1, a sector metal block S1, two right-angled triangular metal blocks, and a circular groove K1 opened on the rectangular metal block M1. The rectangular metal block M1 is attached to the lower surface of the dielectric substrate 7. The length of the rectangular metal block M1 is along the front-back direction, the width is along the left-right direction, and the thickness is along the up-down direction. The front end face of the rectangular metal block M1 and the front end face of the dielectric substrate 7 are in the same plane. The rear end face of the rectangular metal block M1 and the rear end face of the dielectric substrate 7 are in the same plane. The left end face of the rectangular metal block M1 and the left end face of the dielectric substrate 7 are in the same plane. The right end face of the rectangular metal block M1 and the right end face of the dielectric substrate 7 are in the same plane. The circular groove K1 penetrates the rectangular metal block M1 up and down, and the center line of the circular groove K1 coincides with the vertical axis of the rectangular metal block M1; The sector metal block S1 is located inside the circular groove K1 and is attached to the lower end face of the dielectric substrate 7. The cross-section of the sector metal block S1 is a sector. The surface where the arc of the cross-section of the sector metal block S1 is located is called the arc surface of the sector metal block S1. The two surfaces where the two radii of the cross-section of the sector metal block S1 are located are respectively called the first side surface and the second side surface of the sector metal block S1. The sector metal block S1 is symmetric about the first symmetry plane a1. The first side surface of the sector metal block S1 is located on the left side of the first symmetry plane a1. The second side surface of the sector metal block S1 is located on the right side of the first symmetry plane a1. The arc surface of the sector metal block S1 coincides with the circumferential surface of the circular groove K1; The center of the cross-section of the sector metal block S1 is located on the first symmetry plane a1; The center of the cross-section of the sector metal block S1 is located in front of the plane of the front end face of the first rectangular patch G1, and there is a distance between them; The two right-angled triangular metal blocks are respectively called the first triangular metal block T1 and the second triangular metal block T2; The cross-section of the first triangular metal block T1 is a right-angled triangle. The side surface where the hypotenuse of the right-angled triangle of the first triangular metal block T1 is located is called the inclined surface of the first triangular metal block T1. The two side surfaces where the two right-angled sides of the right-angled triangle of the first triangular metal block T1 are located are called the first right-angled surface and the second right-angled surface of the first triangular metal block T1; The first triangular metal block T1 is located inside the circular groove K1 and is attached to the lower end face of the dielectric substrate 7. The first triangular metal block T1 is located on the left side of the sector metal block S1. The inclined surface of the first triangular metal block T1 completely coincides with the first side surface of the sector metal block S1;The extending direction of the first right-angled surface of the first triangular metal block T1 is along the radial direction of the sector-shaped metal block S1; the second triangular metal block T2 is located on the right side of the sector-shaped metal block S1, and the first triangular metal block T1 and the second triangular metal block T2 are symmetric about the first symmetry plane a1; twice the included angle between the first right-angled surface and the inclined surface of the first triangular metal block T1 plus the central angle of the sector-shaped metal block S1 is equal to 90 degrees.

[0033] In this embodiment, the first rectangular patch G1 and the second rectangular patch G2 are two orthogonal rectangular metal patches, and the phase difference between the feeding signals of these two rectangular metal patches is 90°, so as to better achieve the circular polarization characteristic. By setting the length of the third rectangular patch G3 and the radii of the four semi-circular through holes W1, W2, W3, W4, the input impedance and the circular polarization characteristic of the antenna 1 can be set.

[0034] When the radio frequency signal amplified by the power amplifier 1 is output to the input end of the circular polarization antenna, that is, the left end face of the fourth rectangular patch G4, the fourth rectangular patch G4 converts the electrical signal transmitted to it into an electromagnetic wave and transmits it to the third rectangular patch G3. The third rectangular patch G3 transmits the electromagnetic wave transmitted to it to the isosceles trapezoidal metal patch G5. The isosceles trapezoidal metal patch G5 transmits the electromagnetic wave transmitted to it to the second rectangular patch G2. At this time, the electromagnetic wave signal is divided into two paths. One path of the electromagnetic wave signal radiates at the edge of the second rectangular patch G2, and the other path of the electromagnetic wave signal is fed 90° to the first rectangular patch G1 orthogonal to the second rectangular patch G2 for radiation. The phase difference between the electromagnetic waves radiated by the first rectangular patch G1 and the second rectangular patch G2 is 90°. They synthesize a rotating electric field vector in space to form a circularly polarized wave and radiate it into free space.

[0035] To verify the performance of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention, the integrated structure of the power amplifier and the circularly polarized antenna of the present invention is simulated. During the simulation, the length of the dielectric substrate 7 is 103 mm, the width is 103 mm, and the thickness is 0.762 mm; the length of the rectangular metal block M1 is 103 mm, the width is 103 mm, and the thickness is 0.025 mm; the length of the first rectangular patch G1 is 9.25 mm, the width is 34.8 mm, and the thickness is 0.025 mm, the length of the second rectangular patch G2 is 23.63 mm, the width is 8.75 mm, and the thickness is 0.025 mm, the length of the lower base of the isosceles trapezoidal metal patch G5 is 8.75 mm, the length of the upper base is 2.63 mm, the waist length is 7.30 mm, and the thickness is 0.025 mm, the length of the third rectangular patch G3 is 17.51 mm, the width is 2.63 mm, and the thickness is 0.025 mm, the length of the fourth rectangular patch G4 is 3.61 mm, the width is 31.02 mm, and the thickness is 0.025 mm, the radius length of the first semi-circular through hole W1 is 2.46 mm; the radius of the sector metal block S1 is 26.0 mm, and the central angle is 54.3°; the length of the first right-angled surface of the first triangular metal block T1 along the radial direction of the circular groove K1 is 24.40 mm, and the length of the second right-angled surface of the first triangular metal block T1 along the direction perpendicular to its first right-angled surface is 7.97 mm; the radius length of the circular groove K1 is 34.72 mm; the length of the first microstrip line L1 is 9.2 mm, the width is 8.16 mm, the length of the second microstrip line L2 is 5.7 mm, the width is 20.14 mm, the width of the third microstrip line L3 is 5.7 mm, the radius is 12.1 mm, the angle is 90 degrees, the length of the fourth microstrip line L4 is 11.38 mm, the width is 5.7 mm, the length of the fifth microstrip line L5 is 6.12 mm, the width is 4.52 mm, the length of the sixth microstrip line L6 is 7.43 mm, the width is 14.36 mm, the width of the seventh microstrip line L7 is 13.1 mm, the length is 3.43 mm, the length of the eighth microstrip line L8 is 4.52 mm, the width is 3.2 mm, the length of the ninth microstrip line L9 is 10.47 mm, the width is 3.49 mm, the length of the tenth microstrip line L10 is 7.21 mm, the width is 7.21 mm, the width of the first connection end of the eleventh microstrip line L11 is 7.21 mm, the width of the second connection end is 3.7 mm, the width of the third connection end is 8.58 mm, the length of the twelfth microstrip line L12 is 8.58 mm, the width is 1.62 mm, the width of the thirteenth microstrip line L13 is 6 mm, the radius is 12.3 mm, the angle is 90 degrees, the length of the fourteenth microstrip line L14 is 6 mm, the width is 20.1 mm, the width of the fifteenth microstrip line L15 is 2.74 mm, the length is 2.43 mm, the length of the sixteenth microstrip line L16 is 36.The length of the sixteenth microstrip line L16 is 2 mm, and the width is 6 mm. The length of the seventeenth microstrip line L17 is 5.72 mm, and the width is 5.63 mm. The resistance value of the first resistor RL1 is 1000 Ω, the resistance value of the second resistor RL2 is 33 Ω, the capacitance value of the first capacitor C1 is 9 pF, the capacitance value of the second capacitor C2 is 4 pF, the capacitance value of the third capacitor C3 is 33 μF, the capacitance value of the fourth capacitor C4 is 10 pF, the capacitance value of the fifth capacitor C5 is 39 pF, the capacitance value of the sixth capacitor C6 is 9 pF, the capacitance value of the seventh capacitor C7 is 47 μF, the capacitance value of the eighth capacitor C8 is 10 pF, the capacitance value of the ninth capacitor C9 is 39 pF, the capacitance value of the tenth capacitor C10 is 9 pF, the capacitance value of the eleventh capacitor C11 is 9 pF. The model of the transistor P1 is CGH40010F. The first power supply voltage is 2.8 V, and the second power supply voltage is 28 V. The normalized radiation pattern of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention in the horizontal plane is shown in Fig. 4(a); the normalized radiation pattern of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention in the vertical plane is shown in Fig. 4(b); the comparison diagram of the signal PAE and frequency of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention and the traditional cascade at an input power of 28 dBm is as. Figure 5 shown; the comparison diagram of the input power, PAE, and output power of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention and the traditional cascade at frequencies of 1.9 GHz and 2.6 GHz is as Figure 6 shown; the simulated AR diagram of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention is as Figure 7 shown. Figures 5 to 7 Herein, "integration" represents the integrated structure of the power amplifier and the circularly polarized antenna of the present invention, and "traditional cascade" is the integrated structure of the power amplifier and the circularly polarized antenna formed by cascading the power amplifier designed in the literature "Design of an Efficient Continuous Class-F Power Amplifier Based on Multi-Harmonic Tuning Technology - Kim Moon" through a traditional impedance matching circuit with the circularly polarized antenna designed in the literature "Research and Design of a Broadband Circularly Polarized Microstrip Antenna - Chen Hua".

[0036] Analysis of Fig. 4(a) and Fig. 4(b) shows that in the integrated structure of the power amplifier and the circularly polarized antenna of the present invention, the antenna excites right-hand circular polarization (RHCP), while the cross polarization is left-hand circular polarization (LHCP);

[0037] Analysis Figure 5It can be seen that when the input power is 28 dBm and at 1.9 GHz, the maximum PAE of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention is 63%, and the maximum PAE of the traditional cascade is 58%. The integrated structure of the power amplifier and the circularly polarized antenna of the present invention has an improvement of more than 5% compared with the traditional cascade. And at the same input power and at 2.6 GHz, the maximum PAE of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention is 62%, and the integrated structure of the power amplifier and the circularly polarized antenna of the present invention has an improvement of more than 4% compared with the traditional cascade.

[0038] Analysis Figure 6 It can be seen that when the input power is 28 dBm and in the test frequency range of 2 GHz to 3 GHz, the PAE and output power of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention are always better than those of the traditional cascade. The output power of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention is 41 dBm, while the output power of the traditional cascade is only 38 dBm; in the required frequency range of 2.3 GHz to 2.7 GHz, the PAE of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention exceeds 60%, the output power is higher than 39 dBm, and at 2.6 GHz, the maximum PAE is 67% and the output power is 40 dBm. Compared with the traditional cascade, the output power of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention is increased by about 2 dBm at 2.6 GHz, and the PAE is also correspondingly about 11% higher;

[0039] Analysis Figure 7 It can be seen that the 3 dB axial ratio bandwidth of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention is 1250 MHz (1.8 GHz to 3.05 GHz), covering the required frequencies.

[0040] In summary, the integrated structure of the power amplifier and the circularly polarized antenna of the present invention shows significant advantages in key performance indicators such as radiation characteristics, gain, power added efficiency, and output power. Its broadband axial ratio characteristics also meet the requirements of the required frequencies, thus exceeding the traditional cascade in overall performance and having broad application potential.

Claims

1. An integrated structure of a power amplifier and a circularly polarized antenna, comprising a power amplifier and an antenna integrated together, characterized in that The antenna described above is a circularly polarized antenna. The input impedance of the antenna is directly matched with the output impedance of the power amplifier at the center frequencies of 1.9 GHz and 2.6 GHz through the positions of its internal microstrip line feeding points and the impedance of the microstrip line.

2. The integrated structure of a power amplifier and a circularly polarized antenna according to claim 1, wherein The power amplifier includes an input matching circuit, a first bias circuit, a second bias circuit, a transistor, and a DC-blocking output circuit. The input matching circuit has an input terminal, an output terminal, and a bias terminal. The first bias circuit has an input terminal and an output terminal. The DC-blocking output circuit has a connection terminal. The second bias circuit has an input terminal, a first output terminal, and a second output terminal. The input terminal of the input matching circuit is the input terminal of the power amplifier. The output terminal of the input matching circuit is connected to the gate of the transistor. The bias terminal of the input matching circuit is connected to the output terminal of the first bias circuit. The drain of the transistor is connected to the first output terminal of the second bias circuit. The source of the transistor is grounded. The second output terminal of the second bias circuit is connected to the connection terminal of the DC-blocking output circuit, and its connection terminal is the output terminal of the power amplifier. The input terminal of the power amplifier is used to access an external signal. The output terminal of the power amplifier is connected to the antenna. The input terminal of the first bias circuit is used to connect to an external power supply to access a first power supply voltage. The first bias circuit is used to convert the accessed first power supply voltage into a first bias voltage and load it on the gate of the transistor. The input terminal of the second bias circuit is used to connect to an external power supply to access a second power supply voltage. The second bias circuit is used to convert the accessed second power supply voltage into a second bias voltage and load it on the drain of the transistor. The first bias voltage and the second bias voltage are used to make the transistor operate in the AB class state.

3. The integrated structure of a power amplifier and a circularly polarized antenna according to claim 2, characterized in that The first bias circuit includes four microstrip lines, four capacitors, and one resistor; The four microstrip lines are respectively referred to as the first microstrip line, the second microstrip line, the third microstrip line, and the fourth microstrip line. The third microstrip line is an arc-shaped microstrip line, and the first microstrip line, the second microstrip line, and the fourth microstrip line are all rectangular microstrip lines. The four capacitors are respectively referred to as the first capacitor, the second capacitor, the third capacitor, and the fourth capacitor. The resistor is referred to as the first resistor. One end of the first microstrip line is the input end of the first bias circuit. The other end of the first microstrip line is connected to one end of the second microstrip line. The other end of the second microstrip line is connected to one end of the third microstrip line. The other end of the third microstrip line is connected to one end of the fourth microstrip line. The other end of the fourth microstrip line is connected to one end of the first resistor. The other end of the first resistor is the output end of the first bias circuit. One end of the first capacitor, one end of the second capacitor, one end of the third capacitor, and one end of the fourth capacitor are all connected to one side of the second microstrip line. The other ends of the first capacitor, the second capacitor, the third capacitor, and the fourth capacitor are all grounded. The total length of the second microstrip line, the third microstrip line, and the fourth microstrip line is one-quarter wavelength.

4. The integrated structure of a power amplifier and a circularly polarized antenna according to claim 2, characterized in that The input matching circuit described above includes eight microstrip lines, two capacitors, and one resistor. The eight microstrip lines are respectively referred to as the fifth microstrip line, the sixth microstrip line, the seventh microstrip line, the eighth microstrip line, the ninth microstrip line, the tenth microstrip line, the eleventh microstrip line, and the twelfth microstrip line. Among them, the fifth microstrip line, the sixth microstrip line, the seventh microstrip line, the eighth microstrip line, the ninth microstrip line, the tenth microstrip line, and the twelfth microstrip line are all rectangular microstrip lines, and the eleventh microstrip line is a T-shaped junction microstrip line with three connection ends. The two capacitors are respectively referred to as the fifth capacitor and the sixth capacitor, and the resistor is referred to as the second resistor. One end of the fifth microstrip line is the input end of the input matching circuit. The other end of the fifth microstrip line is connected to one end of the fifth capacitor. The other end of the fifth capacitor is connected to one end of the sixth microstrip line. The other end of the sixth microstrip line is connected to one end of the seventh microstrip line. The other end of the seventh microstrip line is connected to one end of the eighth microstrip line. The other end of the eighth microstrip line is connected to one end of the ninth microstrip line. The other end of the ninth microstrip line is respectively connected to one end of the second resistor and one end of the sixth capacitor. The other end of the second resistor and the other end of the sixth capacitor are connected to one end of the tenth microstrip line. The other end of the tenth microstrip line is connected to the first connection end of the eleventh microstrip line. The second connection end of the eleventh microstrip line is the bias end of the input matching circuit. The third connection end of the eleventh microstrip line is connected to one end of the twelfth microstrip line. The other end of the twelfth microstrip line is the output end of the input matching circuit.

5. The integrated structure of a power amplifier and a circularly polarized antenna according to claim 2, wherein The second bias circuit includes five microstrip lines and four capacitors. The five microstrip lines are respectively referred to as the thirteenth microstrip line, the fourteenth microstrip line, the fifteenth microstrip line, the sixteenth microstrip line, and the seventeenth microstrip line. The thirteenth microstrip line is an arc-shaped microstrip line, and the fourteenth microstrip line, the fifteenth microstrip line, the sixteenth microstrip line, and the seventeenth microstrip line are all rectangular microstrip lines. The four capacitors are respectively referred to as the seventh capacitor, the eighth capacitor, the ninth capacitor, and the tenth capacitor. One end of the fifteenth microstrip line is the input end of the second bias circuit. The other end of the fifteenth microstrip line is connected to one side of the sixteenth microstrip line. One end of the thirteenth microstrip line is connected to one end of the sixteenth microstrip line. The other end of the thirteenth microstrip line is connected to one end of the fourteenth microstrip line. The other end of the fourteenth microstrip line is the first output end of the second bias circuit. The other side of the sixteenth microstrip line is the second output end of the second bias circuit. The other end of the sixteenth microstrip line is connected to one end of the seventeenth microstrip line. One end of the seventh capacitor, one end of the eighth capacitor, one end of the ninth capacitor, and one end of the tenth capacitor are all connected to the other end of the seventeenth microstrip line, and the connection end is the input end of the second bias circuit. The other end of the seventh capacitor, the other end of the eighth capacitor, the other end of the ninth capacitor, and the other end of the tenth capacitor are all grounded. The total length of the sixteenth microstrip line, the thirteenth microstrip line, and the fourteenth microstrip line is one-quarter wavelength.

6. The integrated structure of a power amplifier and a circularly polarized antenna according to claim 2, wherein The DC-blocking output circuit includes a capacitor, which is referred to as the eleventh capacitor. One end of the eleventh capacitor is the connection end of the DC-blocking output circuit. The other end of the eleventh capacitor is grounded.

7. An integrated structure of a power amplifier and a circularly polarized antenna according to claim 1, characterized in that The described antenna includes a dielectric substrate, a radiation patch, and a metal ground. The dielectric substrate is in the shape of a cuboid. The direction along the length of the dielectric substrate is defined as the front-back direction, the direction along the width is defined as the left-right direction, and the direction along the height is defined as the up-down direction. The length of the dielectric substrate is equal to its width. The plane that makes the dielectric substrate symmetric about the left and right is called the first symmetry plane, and the plane that makes the dielectric substrate symmetric about the front and back is called the second symmetry plane. The radiation patch includes four rectangular metal patches and an isosceles trapezoidal metal patch attached to the upper end face of the dielectric substrate. These four rectangular metal patches are respectively called the first rectangular patch, the second rectangular patch, the third trapezoidal patch, and the fourth rectangular patch. The length of the first rectangular patch is along the front-back direction, the width is along the left-right direction, and the thickness is along the up-down direction. The right end face of the first rectangular patch is located on the right side of the first symmetry plane and on the left side of the plane where the right end face of the dielectric substrate is located. There is a distance between the right end face of the first rectangular patch and the right side of the first symmetry plane and the plane where the right end face of the dielectric substrate is located respectively. The left end face of the first rectangular patch is located on the left side of the first symmetry plane and on the right side of the plane where the left end face of the dielectric substrate is located. There is a distance between the left end face of the first rectangular patch and the left side of the first symmetry plane and the right side of the plane where the left end face of the dielectric substrate is located respectively. The front end face of the first rectangular patch is located behind the plane where the front end face of the dielectric substrate is located, and there is a distance between them. The rear end face of the first rectangular patch is located in front of the second symmetry plane, and there is a distance between them.The length of the second rectangular patch is along the front-back direction, the width is along the left-right direction, and the thickness is along the up-down direction. The second rectangular patch is located at the rear side of the first rectangular patch. The front end face of the second rectangular patch is connected to and in contact with the rear end face of the first rectangular patch. The width of the second rectangular patch is smaller than the width of the first rectangular patch. The left end face of the second rectangular patch and the left end face of the first rectangular patch are in the same plane. The second rectangular patch is symmetric about the first symmetry plane. Two semi-circular through holes with the same radius are recessed on the right side of the left end face of the second rectangular patch. These two semi-circular through holes are respectively called the first semi-circular through hole and the second semi-circular through hole. The first semi-circular through hole is located at the rear side of the front end face of the second rectangular patch, and there is a distance between them. The first semi-circular through hole is located at the left side of the first symmetry plane, and there is a distance between them. The second semi-circular through hole is located at the rear side of the first semi-circular through hole, and there is a distance between them. The rear end face of the second rectangular patch is tangent to the second semi-circular through hole. Two semi-circular through holes with the same radius are recessed on the left side of the right end face of the second rectangular patch. These two semi-circular through holes are respectively called the third semi-circular through hole and the fourth semi-circular through hole. The first semi-circular through hole and the third semi-circular through hole are symmetric about the first symmetry plane. The second semi-circular through hole and the fourth semi-circular through hole are symmetric about the first symmetry plane. The isosceles trapezoidal metal patch is located at the rear side of the second rectangular patch. The isosceles trapezoidal metal patch is symmetric about the first symmetry plane. The cross-section of the isosceles trapezoidal metal patch is an isosceles trapezoid, and the lower base and the upper base of this isosceles trapezoid are both parallel to the plane where the front end face of the dielectric substrate is located, and its lower base is located at the front side of its upper base. The front end face of the isosceles trapezoidal metal patch completely coincides with the rear end face of the second rectangular patch. The third rectangular patch is located at the rear side of the isosceles trapezoidal metal patch. The length of the third rectangular patch is along the front-back direction, the width is along the left-right direction, and the thickness is along the up-down direction. The third rectangular patch is symmetric about the first symmetry plane. The width of the third rectangular patch is equal to the width of the rear end face of the isosceles trapezoidal metal patch along the left-right direction. The front end face of the third rectangular patch is connected to and in contact with the rear end face of the isosceles trapezoidal metal patch. The rear end face of the third rectangular patch is located at the front side of the plane where the rear end face of the dielectric substrate is located.The length of the fourth rectangular patch extends in the front-back direction, the width extends in the left-right direction, and the thickness extends in the up-down direction. The fourth rectangular patch is located on the left side of the third rectangular patch. The right end face of the fourth rectangular patch is connected to and in contact with the left end face of the third rectangular patch. The left end face of the fourth rectangular patch is located between the plane of the left end face of the dielectric substrate and the plane of the left end face of the second rectangular patch. The front end face of the fourth rectangular patch is located behind the plane of the front end face of the third rectangular patch. The rear end face of the fourth rectangular patch and the rear end face of the third rectangular patch are in the same plane. The metal ground includes a rectangular metal block, a fan-shaped metal block, two right-angled triangular metal blocks, and a circular groove formed in the rectangular metal block. The rectangular metal block is attached to the lower surface of the dielectric substrate. The length of the rectangular metal block extends in the front-back direction, the width extends in the left-right direction, and the thickness extends in the up-down direction. The front end face of the rectangular metal block is in the same plane as the front end face of the dielectric substrate. The rear end face of the rectangular metal block is in the same plane as the rear end face of the dielectric substrate. The left end face of the rectangular metal block is in the same plane as the left end face of the dielectric substrate. The right end face of the rectangular metal block is in the same plane as the right end face of the dielectric substrate. The circular groove penetrates the rectangular metal block vertically, and the center line of the circular groove coincides with the vertical axis of the rectangular metal block. The fan-shaped metal block is located inside the circular groove and is attached to the lower end face of the dielectric substrate. The cross-section of the fan-shaped metal block is fan-shaped. The plane of the arc of the cross-section of the fan-shaped metal block is called the arc surface of the fan-shaped metal block. The two planes of the two radii of the cross-section of the fan-shaped metal block are respectively called the first side face and the second side face of the fan-shaped metal block. The fan-shaped metal block is symmetric about the first symmetry plane. The first side face of the fan-shaped metal block is on the left side of the first symmetry plane. The second side face of the fan-shaped metal block is on the right side of the first symmetry plane. The arc surface of the fan-shaped metal block coincides with the circumferential surface of the circular groove. The center of the cross-section of the fan-shaped metal block is on the first symmetry plane. The center of the cross-section of the fan-shaped metal block is located in front of the plane of the front end face of the first rectangular patch and there is a certain distance between them. The two right-angled triangular metal blocks are respectively called the first triangular metal block and the second triangular metal block. The cross-section of the first triangular metal block is a right-angled triangle. The side face where the hypotenuse of the right-angled triangle of the first triangular metal block is located is called the inclined face of the first triangular metal block. The two side faces where the two right-angled sides of the right-angled triangle of the first triangular metal block are located are called the first right-angled face and the second right-angled face of the first triangular metal block.The first triangular metal block is located inside the circular groove and is attached to the lower end face of the dielectric substrate. The first triangular metal block is located on the left side of the sector-shaped metal block, and the inclined surface of the first triangular metal block completely coincides with the first side surface of the sector-shaped metal block; the extending direction of the first right-angle surface of the first triangular metal block is along the radial direction of the sector-shaped metal block; the second triangular metal block is located on the right side of the sector-shaped metal block, and the first triangular metal block and the second triangular metal block are symmetric about the first symmetry plane; twice the included angle between the first right-angle surface and the inclined surface of the first triangular metal block plus the central angle of the sector-shaped metal block is equal to 90 degrees.;

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