High-temperature reaction equipment

Abstract

The invention discloses high-temperature reaction equipment which comprises a reaction cavity; the base is arranged at the bottom of the reaction cavity and used for bearing a substrate, and the base comprises a central area, a base disc area and an edge area which are sequentially arranged close to the side wall of the reaction cavity in the radial direction; the top surface of the reaction cavity is provided with the first heat insulation plate and a baffle, the baffle is opposite to the base, the first heat insulation plate is arranged on the side, away from the base, of the baffle, an airflow gap is formed between the first heat insulation plate and the baffle, and the first heat insulation plate comprises a plurality of sub heat insulation plates; and the comprehensive thermal conductivity of the sub-thermal-insulation plate corresponding to the base plate area is greater than that of the sub-thermal-insulation plate corresponding to the central area and the edge area.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor and pan-semiconductor equipment, and more particularly, to a high-temperature reaction equipment. Background Art

[0002] High-temperature reaction equipment usually needs to heat a component to be heated in a high-temperature environment to meet the process requirements of high-uniformity temperature. To ensure the excellent process effect, the uniformity of the surface temperature distribution of the object to be heated is crucial. However, due to factors such as complex heat transfer paths and uneven heat dissipation conditions inside the equipment, the surface temperature distribution of the object to be heated is often uneven, resulting in an unsatisfactory process effect.

[0003] Therefore, it is necessary to develop a new structure of high-temperature reaction equipment to improve the temperature distribution uniformity, which is an urgent technical problem to be solved in this field. Summary of the Invention

[0004] The present invention aims to solve one of the technical problems in the related art to a certain extent. For this purpose, the present invention provides a high-temperature reaction equipment.

[0005] To achieve the above object, as a first aspect of the present invention, a high-temperature reaction equipment is disclosed, and the high-temperature reaction equipment includes: A reaction chamber; A base, which is arranged at the bottom of the reaction chamber for carrying a substrate, and the base includes a central area, a base plate area, and an edge area arranged in sequence along the radial direction close to the side wall of the reaction chamber; At least one first heat insulation plate, which is arranged on the top surface of the reaction chamber, A baffle, which is opposite to the base, the first heat insulation plate is arranged on the side of the baffle facing away from the base, and there is an air flow gap between the first heat insulation plate and the baffle. The first heat insulation plate includes a plurality of sub-heat insulation plates, and the comprehensive thermal conductivity of the sub-heat insulation plates corresponding to the base plate area is greater than the comprehensive thermal conductivity of the sub-heat insulation plates corresponding to the central area and the edge area, where The comprehensive thermal conductivity of the sub-heat insulation plate satisfies the following formula: k eff = (t1 * k1 / t3) + (t2 * k2 / t3) where k eff is the comprehensive thermal conductivity, t1 is the thickness of the sub-heat insulation plate, k1 is the thermal conductivity of the sub-heat insulation plate, t2 is the thickness of the air flow gap, k2 is the thermal conductivity of the air flow in the air flow gap, and t3 is the total thickness of the sub-heat insulation plate and the air flow gap.

[0006] Further, the thickness of the sub-insulation plate corresponding to the base plate area is greater than the thickness of the sub-insulation plates corresponding to the central area and the edge area.

[0007] Further, the material of the sub-insulation plate includes at least one of graphite felt, ceramics, and metals. The thermal conductivity of the material of the sub-insulation plate corresponding to the base plate area is greater than that of the materials of the sub-insulation plates corresponding to the central area and the edge area. The material of the baffle includes graphite felt and / or quartz.

[0008] Further, a second insulation plate is provided on the side wall of the reaction chamber. The second insulation plate surrounds the base to block the heat dissipated from the base to the side wall.

[0009] Further, the second insulation plate includes a longitudinal insulation plate and a transverse insulation plate. The longitudinal insulation plate and the transverse insulation plate are integrally connected. The longitudinal insulation plate extends around the base and is spaced apart from the side wall of the reaction chamber correspondingly, so as to space the base apart from the side wall. The transverse insulation plate is annularly arranged at the top of the reaction chamber, so that the second insulation plate has a cavity opening at the top. The first insulation plate covers the cavity opening, so as to form an insulation space between the first insulation plate, the second insulation plate and the base.

[0010] Further, the surface roughness of the sub-insulation plate corresponding to the base plate area is greater than that of the sub-insulation plates corresponding to the central area and the edge area.

[0011] Further, in the radial direction of the first insulation plate, a plurality of the sub-insulation plates are annularly arranged with the central area as the center, and there is a first interval between adjacent sub-insulation plates. In the circumferential direction of the first insulation plate, at least one of the sub-insulation plates includes a plurality of annular sub-plates, and there is a second interval between adjacent annular sub-plates in the circumferential direction of the first insulation plate.

[0012] Further, the first interval satisfies the following formula:

[0013] where d is the first interval, α is the coefficient of thermal expansion of the material of the sub-insulation plate, L is the dimension of the sub-insulation plate in the radial direction of the first insulation plate, ∆T is the difference between the working temperature and the installation temperature δ is the safety margin, and the range of δ is between 0.1 mm and 0.5 mm; The second interval satisfies the following formula:

[0014] where d2 is the second interval L2 is the dimension of the sub-insulation board along the circumference of the first insulation board.

[0015] Further, a deformable heat-conducting member is provided in the first interval and the second interval.

[0016] Further, a plurality of first mounting holes are formed in the annular dividing plate for mounting screws. The plurality of first mounting holes are arranged at a third interval along the circumference of the first insulation board, so that the plurality of annular dividing plates are detachably fixed to the cavity wall of the reaction cavity through the screws and the first mounting holes.

[0017] Further, the third intervals of the plurality of first mounting holes along the circumference of the first insulation board are the same, and the third interval satisfies the following formula: d3 ≥ 3×t4+D1 where d3 is the third interval, t4 is the thickness of the annular dividing plate, and D1 is the diameter of the first mounting hole.

[0018] Further, at least one second mounting hole is formed in the annular dividing plate for the detection probe of the temperature sensor to penetrate through the second mounting hole to detect the temperature inside the reaction cavity.

[0019] Further, the second mounting hole is located at the interval between the plurality of annular dividing plates and corresponds to the base plate area; The second mounting hole includes a tapered hole, and / or the inner wall of the second mounting hole has a polished surface to increase the reflectivity, and / or a heat insulation sleeve is nested in the second mounting hole; The surface roughness of the annular dividing plate provided with the second mounting hole is greater than the surface roughness of the annular dividing plate not provided with the second mounting hole.

[0020] Further, the high-temperature reaction device further includes a spraying module. The spraying module includes an air inlet pipe body and a spraying head. The air inlet pipe body is connected to the spraying head. The air inlet pipe body has at least one air inlet channel. The spraying head has a spraying surface. A plurality of spraying holes are formed on the spraying surface. The air inlet channel is communicated with the spraying holes, so that the gas in the air inlet channel is sprayed onto the reaction cavity through the spraying surface; The first heat insulation plate is provided with a spray installation hole, and the intake pipe body penetrates through the cavity wall of the reaction cavity and the corresponding spray installation hole, so that the spray head is arranged on the side of the first heat insulation plate close to the base.

[0021] Further, the reaction cavity includes a first cavity cover arranged at the top. The first cavity cover has an outer surface and an inner surface arranged opposite to each other. The first heat insulation plate is arranged on the inner surface. A plurality of first liquid cooling channels are arranged in the first cavity cover. The plurality of first liquid cooling channels are arranged radially along the base. The inner surface corresponds to the front surface of the base, and the number of the first liquid cooling channels at the position corresponding to the base plate area is greater than the number of the first liquid cooling channels at the positions corresponding to the central area and the edge area. The high-temperature reaction equipment provided by the present application effectively reduces heat dissipation by matching the temperature differences in the central area, base plate area, and edge area of the base with first heat insulation plates having different heat conductivities, so that the surface of the article to be processed has a more uniform temperature distribution during the heating process of the base, thereby making the process reaction more uniform and consistent on the surface of the article; through the structural design between the first heat insulation plate and the baffle, the generated air flow gap can further regulate the heat conductivity at different positions in the cavity, and the first heat insulation plate is divided into sub-heat insulation plates in different temperature zones, further increasing the fine temperature regulation of a single area, ensuring that the temperature gradients in different areas are more consistent, promoting the reaction of the reactants at the optimal temperature, reducing the generation of side reactions, and thus improving the uniformity and consistency of the product.

[0022] These features and advantages of the present invention will be disclosed in detail in the following specific embodiments and the accompanying drawings. The best embodiments or means of the present invention will be shown in detail in combination with the accompanying drawings, but it is not a limitation to the technical solution of the present invention. In addition, these features, elements, and components appear in multiple in each of the following texts and drawings, and different symbols or numbers are marked for convenience of representation, but all represent components with the same or similar structures or functions. Description of the Drawings

[0023] The present invention will be further described below in conjunction with the accompanying drawings: Figure 1 It is a schematic structural diagram of an embodiment of the high-temperature treatment equipment provided by the present invention; Figure 2 It is a schematic structural diagram of an embodiment of the high-temperature treatment equipment provided by the present invention; Figure 3 It is a schematic structural diagram of an embodiment of the high-temperature treatment equipment provided by the present invention; Figure 4 It is a schematic structural diagram of an embodiment of the high-temperature treatment equipment provided by the present invention; Figure 5 It is a schematic structural diagram of an embodiment of the high-temperature treatment equipment provided by the present invention; Figure 6 It is a cross-sectional schematic diagram of an embodiment of the corresponding relationship between the first heat insulation plate and the base provided by the present invention; Figure 7 It is a top view of an embodiment of the first heat insulation plate provided by the present invention; Figure 8 It is a temperature simulation data analysis diagram of an embodiment inside the reaction chamber provided by the present invention; Figure 9 It is a temperature simulation data analysis diagram of another embodiment inside the reaction chamber provided by the present invention.

[0024] Description of the reference numerals in the drawings 1: High-temperature reaction equipment; 2: First chamber cover; 3: Reaction chamber; 4: Second chamber cover; 5: First heat insulation plate; 6: Baffle; 7: Spraying module; 8: Base; 9: Heating source; 11: Support cylinder; 20: First liquid cooling channel; 30: Side wall; 31: Heat insulation bottom plate; 32: Second heat insulation plate; 33: Heat insulation space; 301: Side cooling channel; d: First interval; d2: Second interval; 50: Sub heat insulation plate; 51: Annular dividing plate; 52: First mounting hole; 53: Screw; 511: Second mounting hole; 70: Spraying head; 71: Air inlet pipe body; 710: Air inlet channel; 80: Base plate area: 81: Central area; 82: Edge area; 810: Spraying mounting hole; 500: High-temperature area; 501: First low-temperature area; 502: Second low-temperature area; 91: Support seat. Detailed implementation manners

[0025] The embodiments of the present invention will be described in detail below. The examples of the embodiments are shown in the drawings, where the same or similar reference numerals represent the same or similar elements or elements with the same or similar functions from beginning to end. Based on the embodiments in the implementation manners, it is intended to explain the present invention and should not be construed as a limitation to the present invention.

[0026] As used in this specification, the phrase "in one embodiment" or "example" or "instance" means that the specific features, structures, or characteristics described in connection with the embodiment itself can be included in at least one embodiment disclosed in this application. The appearance of the phrase "in one embodiment" at various positions in the specification does not necessarily refer to the same embodiment.

[0027] It has been found by the inventors of the present application that high-temperature reaction equipment (such as high-temperature reaction furnaces, vacuum furnaces, etching equipment, CVD equipment, PVD equipment, etc. in semiconductor manufacturing equipment) is widely used in industrial production, especially in the fields of semiconductor manufacturing, material synthesis, etc. These devices usually need to heat the components to be heated in a high-temperature environment to meet the requirements of high-precision processes. To ensure the excellent process effect, the uniformity of the surface temperature distribution of the object to be heated is crucial. However, due to factors such as complex heat transfer paths inside the equipment and uneven heat dissipation conditions, the surface temperature distribution of the object to be heated is often uneven, resulting in an unsatisfactory process effect.

[0028] Currently, the commonly used methods for controlling temperature uniformity in high-temperature reaction equipment include: (1) improving temperature uniformity by optimizing the layout and power distribution of heating sources (such as resistance heating, infrared heating, electromagnetic induction heating, etc.); (2) setting water-cooling channels on the cavity wall and end caps, and controlling the temperature of the cavity wall and end caps through a cooling medium, thereby controlling the heat transfer effect from the inside of the cavity to the outside and improving temperature uniformity; (3) setting gas flow deflectors inside the cavity to guide gas flow to enhance and improve the heat transfer effect. Although the prior art has improved temperature uniformity to a certain extent, there are still the following problems: (1) Uneven heat transfer paths. The heat radiated by the heating source is transferred outward through the object to be heated, air flow, and end caps. However, due to the complex heat transfer paths, the surface temperature distribution of the object to be heated is uneven. (2) Uneven heat dissipation conditions. The water-cooling channels on the side walls of the cavity may cause the temperature in the middle of the object to be heated to be high and the temperatures on both sides to be low, further exacerbating the uneven temperature distribution. (3) Limitations in the design of heat insulation plates. Most existing heat insulation plates are of an integral structure, making it difficult to locally optimize according to the heat dissipation requirements of different regions, and they are inconvenient to install and maintain.

[0029] The present invention aims to solve the problem of uneven surface temperature distribution of the object to be heated in high-temperature reaction equipment. By providing a detachable heat insulation plate and a corresponding heat transfer optimization method, the heat transfer uniformity inside the equipment is improved, thereby enhancing the excellence of the process effect.

[0030] To this end, as the first aspect of the present application, a high-temperature reaction equipment 1 is disclosed, such as Figures 1 to 6 As shown, the high-temperature reaction equipment 1 includes: A reaction cavity 3; A base 8, the base 8 is arranged at the bottom of the reaction cavity 3 for carrying a substrate, and the base 8 includes a central area 81, a base plate area 80, and an edge area 82 arranged in sequence along the radial direction close to the side wall 30 of the reaction cavity 3; At least one first heat insulation plate 5, the first heat insulation plate 5 is arranged on the top surface of the reaction cavity 3, The baffle 6 is opposite to the base 8. The first heat insulation plate 5 is arranged on the side of the baffle 6 away from the base 8. There is an air flow gap between the first heat insulation plate 5 and the baffle 6. The first heat insulation plate 5 includes a plurality of sub-heat insulation plates 50. The comprehensive thermal conductivity of the sub-heat insulation plates 50 corresponding to the base plate area 80 is greater than that of the sub-heat insulation plates 50 corresponding to the central area 81 and the edge area 82. Among them, The comprehensive thermal conductivity of the sub-heat insulation plate 50 satisfies the following formula: k eff = (t1 * k1 / t3) + (t2 * k2 / t3) Wherein, k eff is the comprehensive thermal conductivity, t1 is the thickness of the sub-heat insulation plate, k1 is the thermal conductivity of the sub-heat insulation plate, t2 is the thickness of the air flow gap, k2 is the thermal conductivity of the air flow in the air flow gap, and t3 is the total thickness of the sub-heat insulation plate 50 and the air flow gap.

[0031] First, the present invention conducts a temperature simulation analysis on the base 8 and obtains that its actual temperature distribution has differences. The base 8 is divided into different temperature regions, so as to correspondingly adjust the heat conduction of the heating device and the heat insulation device, so that different regions can be heated to the same extent according to the regional temperature differences. For example, the base plate area 80 has a higher temperature, while the central area 81 and the edge area 82 have relatively lower temperatures. Different regions have different requirements for heat conduction, which makes it necessary to improve the heat dissipation capacity of the process space corresponding to the base plate area 80 above to balance the temperature difference between the center and the edge area 82 of the base 8. Therefore, the first heat insulation plate 5 is also divided into a plurality of sub-heat insulation plates 50 to facilitate targeted heat adjustment of the process space in different regions of the base 8. Combining the existence of the first heat insulation plate 5 and the air flow gap, the adjustment of heat absorption and dissipation can be achieved by adjusting the comprehensive thermal conductivity of the sub-heat insulation plates 50. For example, by adjusting the thickness of the air flow gap at the corresponding position of the sub-heat insulation plate 50, the thermal conductivity of the air flow at the corresponding position of the sub-heat insulation plate 50, the difference in material thermal conductivity between different sub-heat insulation plates 50, the thickness of the sub-heat insulation plate 50, etc. Multiple methods can accurately control the local temperature gradient, thereby improving the temperature uniformity and stability during the reaction process. By designing the comprehensive thermal conductivity of the sub-heat insulation plate 50 through the formula, it is ensured that the sub-heat insulation plate 50 corresponding to the base plate area 80 has higher thermal conductivity, so as to achieve more effective heat conduction and meet the requirements of high-temperature reactions. This design reduces the thermal conductivity of the sub-heat insulation plates 50 in the central area 81 and the edge area 82 while ensuring the efficient heat conduction of the sub-heat insulation plates 50 in the base plate area 80, enhancing the control of temperature distribution.

[0032] The setting of the first heat insulation plate 5 improves the heat exchange between the base 8 and the external environment, maintains a uniform high-temperature condition, and ensures the reaction efficiency. It can also protect other parts of the device from the high temperature and extend the service life of the device. The design of the air flow gap allows air or other gases to flow between the heat insulation plate and the baffle 6, which helps to further reduce the heat conduction and improve the heat insulation effect. A reasonable air flow can effectively reduce the heat loss and provide the necessary cooling effect to prevent overheating. Combining the presence of the first heat insulation plate 5 and the air flow gap, efficient and highly selective heat management can be achieved during the reaction process, promoting the reaction rate and improving the synthesis efficiency of the product. Due to the targeted temperature design in different regions, a reasonable distribution of heat can be achieved, ensuring that the reactants react at the optimal temperature, thereby reducing side reactions and improving the quality of the product.

[0033] It should be emphasized that in this application, the baffle 6 is introduced to form an air flow gap with the first heat insulation plate 5. This is because the first heat insulation plate 5 in this application is an arrangement of multiple sub-heat insulation plates 50. The zoned arrangement may cause problems such as large thermal resistance or thermal short circuit at the junction of regions. To reduce the heat dissipation effect of the partition of the first heat insulation plate 5, a baffle 6 is installed below it, so that the heat dissipated by the base 8 is first absorbed by the baffle 6 and then transferred to the first heat insulation plate 5 through the air flow gap, reducing the thermal resistance and thermal short circuit effect. Secondly, the design of the partition also considers the actual process conditions of the first heat insulation plate 5. For example, during some high-temperature heating processes, since multiple sub-heat insulation plates 50 of the first heat insulation plate 5 may be set to different materials to achieve different heat conduction rates, but various materials may generate pollutants on the surface in a high-temperature environment, which may fall on the base 8 or cause pollution in the cavity. In addition, the high-temperature process gas is more likely to react with the surface of the sub-heat insulation plates 50 of various materials. Considering the above actual use conditions, a baffle 6 is installed between the first heat insulation plate 5 and the base 8, which can not only form an air flow gap for adjusting the heat conduction rate with the first heat insulation plate 5, but also reduce the thermal resistance and thermal short circuit effect at the junction of multiple sub-heat insulation plates 50, prevent the sub-heat insulation plates 50 of different materials from polluting the base 8, and avoid the formation of process gas on the surface of the sub-heat insulation plates 50.

[0034] In this application, the baffle 6 can also not be used, that is, the first heat insulation plate 5 directly corresponds to the base 8, and an adjustable air flow heat conduction rate is formed by using the air flow layer between the first heat insulation plate 5 and the base 8. The first heat insulation plate 5 can also be spaced from the top surface of the reaction cavity 3, so as to form an air flow gap between the first heat insulation plate 5 and the top surface.

[0035] It should be noted that in this application, the first heat insulation plate 5 and the air flow gap are combined for comprehensive heat conduction, and neither of them can be absent. This is because the thermal conductivity of gas is usually much lower than that of solid. The heat dissipated from the base 8 first passes through the air flow gap with low thermal conductivity, and the air flow gap can perform preliminary rough adjustment on the heat corresponding to different positions of the base 8. Further, the heat is transferred to the first heat insulation plate 5 with a larger thermal conductivity, and the transferred heat is accelerated. The heat flow increases, and the heat is further finely adjusted and dissipated by different sub-heat insulation plates 50.

[0036] This application does not make special limitations on the shape of the first heat insulation plate 5, and the shape can be designed into a non-circular shape according to requirements. For the convenience of actual installation and maintenance, and to meet the heat transfer optimization requirements of the reaction cavity 3, the first heat insulation plate 5 is not limited to being circular or square. In some embodiments, since the first heat insulation plate 5 corresponds to the base 8, and the structure of the base 8 is as Figure 3 , Figure 4 and Figure 7 shown, the first heat insulation plate 5 is preferably circular, which can have better heat dissipation corresponding.

[0037] This application does not make special limitations on how the first heat insulation plate 5 is divided into multiple sub-heat insulation plates 50. It can be arranged in multiple rows and columns at equal intervals, or multiple rings can be arranged, or it can be arranged in multiple sectors outward with the center of the first heat insulation plate 5 as the center. Since the temperature difference of the base 8 is mainly reflected in the radial direction of the base 8, therefore, preferably, in the radial direction of the first heat insulation plate 5, multiple sub-heat insulation plates 50 are arranged in a ring with the central area 81 as the center, as Figure 4 and Figure 7 shown, there is a first interval d between adjacent sub-heat insulation plates 50; in the circumferential direction of the first heat insulation plate 5, at least one sub-heat insulation plate 50 includes multiple annular plates 51, and there is a second interval d2 between adjacent annular plates 51 in the circumferential direction of the first heat insulation plate 5.

[0038] The interval design between the sub-heat insulation plates 50 is to offset the thermal expansion effect between the sub-heat insulation plates 50 during the block design. For the sub-heat insulation plates 50 made of different materials, they will have different thermal expansions at high temperatures. The interval design can offset the thermal expansions generated by them at high temperatures, so that the sub-heat insulation plates 50 in blocks will not be squeezed against each other due to thermal expansion, forming thermal stress.

[0039] The interval is used to relieve the thermal expansion stress and at the same time avoid the local temperature difference caused by the interruption of the heat flow path. Preferably, the first interval satisfies the following formula:

[0040] where d is the first interval, α is the material thermal expansion coefficient of the sub-heat insulation plate 50, L is the width of the sub-insulation board 50 in the radial direction along the first insulation board 5. ∆T is the difference between the operating temperature and the installation temperature. δ is the safety margin, and the range of δ is between 0.1 mm and 0.5 mm. The second interval satisfies the following formula:

[0041] where d2 is the second interval. L2 is the dimension of the sub-insulation board along the circumferential direction of the first insulation board.

[0042] In some embodiments, if the material of the sub-insulation board 50 corresponding to the base plate area 80 is selected as copper, the thermal expansion coefficient of copper is 17×10 -6 / °C, and the material of the adjacent sub-insulation board 50 is selected as aluminum (corresponding to the central area 81 or the edge area 82), the thermal expansion coefficient of aluminum is 23×10 -6 / °C. Assuming that the overall outer diameter of the first insulation board 5 is 800 mm and the inner diameter is 100 mm, and the sub-insulation board 50 is arranged in a ring shape with 5 circles, the radial dimension of the unilateral annular split board 51 is 70 mm. The first interval of the sub-insulation board 50 is calculated based on the material with the maximum thermal expansion coefficient, and the temperature difference of thermal expansion is considered with the maximum difference between the operating temperature and the installation temperature (that is, the process temperature of the cavity and the overall temperature of the cavity at normal temperature, assumed to be 500 °C). According to the thermal expansion coefficient of aluminum alloy, the first interval between any sub-insulation boards 50 satisfies: d≥23×1 ten to the power of negative six -6 ×70×500 + 0.1 = 0.905 mm, that is, the radial first interval between any sub-insulation boards 50 should be greater than or equal to 0.905 mm to meet the thermal deformation compensation requirements of the sub-insulation board 50.

[0043] In some embodiments, since a larger interval is required between adjacent sub-insulation boards 50 with high thermal expansion coefficients (copper / aluminum), which will cause the interruption of the radial heat flow path, the interval should be as small as possible under the condition of meeting the deformation requirements. According to the formula satisfied by the first interval, the number of sub-insulation boards 50 can be increased, thereby reducing the radial dimension (L) of a single sub-insulation board 50, and also reducing the temperature difference in the radial direction, so as to reduce the first interval d.

[0044] In some other embodiments, the first gap can be reduced by using a material with a low coefficient of thermal expansion as the sub-insulation plate 50. For example, graphite felt is used as the sub-insulation plate 50. In some other embodiments, the sub-insulation plate 50 is made of a composite material, and the materials of adjacent sub-insulation plates 50 are different (such as splicing copper and graphite felt). Then, the first gap is calculated according to the material with a higher coefficient of thermal expansion. Since the increase in the first gap will increase the impact of the interruption of the heat flow path, a deformable heat-conducting member is provided in the first gap. When the sub-insulation plate 50 expands due to heat, the deformable heat-conducting member can act as a buffer material to hinder the expansion deformation and prevent mutual extrusion. At the same time, the material of the deformable heat-conducting member has a higher thermal conductivity than that of the gas, so it can transfer heat faster, reduce the interruption of the heat flow path, and compensate for the thermal resistance of the gap. As a preference, a flexible heat-conducting pad (such as graphite foil) can be filled and arranged in the first gap to compensate for the thermal resistance. For another example, a metal corrugated belt can be filled in the first gap to cover the gap and allow deformation while maintaining the heat-conducting path.

[0045] This application does not make special limitations on the number of sub-insulation plates 50 arranged in a ring and the number of annular sub-plates 51. In some embodiments, in the radial direction, the ring of the sub-insulation plate 50 can be divided into 5 to 10 circles, more preferably 3 to 6 circles. In the circumferential direction, each sub-insulation plate 50 can include 3 to 6 annular sub-plates 51, and each annular sub-plate 51 is evenly spaced, as Figure 4 and Figure 7 shown. In some other embodiments, for the load area of the first insulation plate 5, that is, the first insulation plate 5 is fixedly connected to the top of the reaction cavity 3. Generally, some first mounting holes 52 are arranged on the surface of the first insulation plate 5, and the screw 53 passes through the first mounting hole 52 and the cavity wall to achieve fixation. Then, the sub-insulation plate 50 provided with the first mounting hole 52 can reduce the number of annular sub-plates 51 to enhance the regional rigid structure. For example, the sub-insulation plate 50 corresponding to the central area 81 of the first insulation plate 5 is evenly divided into 3 to 6 annular sub-plates 51 in the circumferential direction. Since the annular area of the sub-insulation plate 50 near the edge area 82 is larger and the outer sub-insulation plate 50 is heavier, more first mounting holes 52 need to be opened to be fixed to the cavity wall. Then, each circle of the sub-insulation plate 50 is evenly divided into 1 to 3 annular sub-plates 51 in the circumferential direction.

[0046] As an optional implementation manner, a plurality of first mounting holes 52 are opened on the annular sub-plate 51 for installing the screw 53, as Figures 1 to 5As shown, a plurality of first mounting holes 52 are provided at a third interval along the circumference of the first heat insulation plate 5, so that the plurality of annular dividing plates 51 are detachably fixed to the cavity wall of the reaction cavity 3 through screws 53 and the first mounting holes 52. In some embodiments, the first mounting holes 52 may adopt a circumferential layout (such as 6 screws evenly distributed at 60° or 8 screws evenly distributed at 45°) to balance the local thermal resistance difference. On the premise of ensuring the structural strength, the number of screws is reduced (preferably 6 to 12) to reduce the thermal short - circuit effect.

[0047] Preferably, the third intervals of the plurality of first mounting holes 52 along the circumference of the first heat insulation plate 5 are the same, and the third interval satisfies the following formula: d3 ≥ 3×t4+D1 Wherein, d3 is the third interval, t4 is the thickness of the annular dividing plate 51, and D1 is the diameter of the first mounting hole 52; The screws 53 are small - diameter screws (such as M4 or M5 screws 53) to reduce the cross - sectional area of metal heat conduction and reduce the thermal short - circuit effect. The thermal conductivity of the material of the screws 53 is close to that of the material of the annular dividing plate 51 (such as titanium alloy) to reduce additional heat conduction. The length of the screws 53 is preferably such that the thread engagement length is satisfied (such as 1.5 times the screw diameter) to reduce the redundant metal heat conduction path.

[0048] As one of the key points of the present invention, the present application does not make special limitations on how to set the thermal conductivity of the first heat insulation plate 5, and only needs to satisfy the thermal conductivity relationship of different positions of the corresponding base 8. The comprehensive thermal conductivity can be jointly determined by the sub - heat insulation plate 50 and the air flow layer. For example, in some embodiments, the comprehensive thermal conductivity of the first heat insulation plate 5 can be adjusted by adjusting the thickness of the sub - heat insulation plate 50. Specifically, the thickness of the sub - heat insulation plate 50 corresponding to the base plate area 80 is greater than the thickness of the sub - heat insulation plate 50 corresponding to the central area 81 and the edge area 82. This structure greatly increases the self - thermal conductivity of the sub - heat insulation plate 50 corresponding to the base plate area 80, that is, t1 increases. At the same time, due to the increase in its thickness, the air flow gap at the corresponding position becomes thinner, that is, t2, and the shortening of the air flow path reduces the heat preservation effect formed by the air flow gap, further strengthening the heat transfer at this position, as Figure 6 As shown, in a specific embodiment, the base 8 is divided into a central area 81, a base plate area 80, and an edge area 82. The corresponding first heat insulation plate 5 is divided into a first low - temperature area 501, a high - temperature area 500, and a second low - temperature area 502. The high - temperature area 500 can thicken the sub - heat insulation plate 50 (thickened to 15 mm), and the first low - temperature area 501 and the second low - temperature area 502 can thin the sub - heat insulation plate 50 (thinned to 5 mm). It can also be that the high - temperature area 500 uses a convex - surface - type sub - heat insulation plate 50 to increase heat conduction, and the first low - temperature area 501 and the second low - temperature area 502 use a flat - surface - type to increase thermal resistance.

[0049] In some other embodiments, the material of the sub-insulation plate 50 includes at least one of graphite felt, ceramic, and metal. The thermal conductivity of the material of the sub-insulation plate 50 corresponding to the base plate area 80 is greater than that of the material of the sub-insulation plate 50 corresponding to the central area 81 and the edge area 82. Metals belong to materials with relatively high thermal conductivity, while ceramics and graphite felt have relatively low thermal conductivity and have better heat preservation effects, which are used according to specific process requirements. For example, if the reaction chamber 3 is of the cold-wall type and the temperature difference between the internal temperature and the chamber wall is greater during the heating process, ceramic with better heat preservation effect can be selected as the first insulation plate 5, so that the internal heat can be retained in the chamber and will not be quickly dissipated outward through the first insulation plate 5. In a specific implementation, high-thermal-conductivity materials (such as copper and aluminum) are used in the high-temperature area 500 to accelerate heat dissipation, and low-thermal-conductivity materials (such as graphite felt) are used in the first low-temperature area 501 and the second low-temperature area 502 to inhibit heat dissipation.

[0050] According to the heat conduction formula Q1=-k△T / L (where Q1 is the heat flux density, k is the thermal conductivity, △T is the temperature difference between two points, and L is the distance between the two points), materials with different thermal conductivities (such as copper, aluminum, graphite felt, etc., with thermal conductivity copper > aluminum > graphite felt) are used as the sub-insulation plate 50 for different regions with temperature differences, which can compensate for the heat dissipation differences in different regions and improve the temperature uniformity of the substrate to be heated.

[0051] As a specific implementation, the material of the baffle 6 includes graphite felt and / or quartz. In addition to forming an air flow gap with the first insulation plate 5, graphite felt and quartz have lower reactivity (chemical inertness), that is, it is more difficult for process active gases to react or deposit on the surface of the baffle 6.

[0052] The present invention can also combine the spacing, thickness, material, and segmented structure of the above-mentioned sub-insulation plate 50 to improve the heat transfer effect. That is, by controlling the surface absorptivity, material, structure, assembly method, and installation position of the sub-insulation plate 50, the optimization of the heat conduction effect is realized, thereby improving the temperature distribution uniformity of the high-temperature reaction device 1.

[0053] One of the key points of the present invention also includes the surface treatment of the sub-insulation plate 50. According to the basic formula for radiation absorption Q2 = βG (where Q2 is the radiation heat flux absorbed per unit area, β is the surface absorptivity, and G is the incident radiation intensity), by controlling the surface absorptivity of the sub-insulation plate 50 in zones, and then changing the heat absorption capacity of the sub-insulation plate 50 in different zones, the overall heat conduction situation can be optimized, achieving the effect of uniform temperature of the substrate to be heated. Adjusting the surface absorptivity of the sub-insulation plate 50 can be achieved by controlling the surface roughness, that is, by performing different surface treatment methods, including surface polishing treatment, surface oxidation treatment, surface sandblasting treatment, etc. Among them, different surface polishing methods can be further used for surface polishing to control its surface roughness. For example, mechanical polishing of the surface from coarse to fine can be carried out to obtain gradually finer surface roughness and the corresponding surface absorptivity. For the overall first insulation plate 5, surface treatment can be carried out in the radial or circumferential direction in zones; for the sub-insulation plate 50, surface treatment can be directly carried out on different sub-insulation plates 50. Preferably, the surface roughness of the sub-insulation plate 50 corresponding to the base plate area 80 is greater than that of the sub-insulation plate 50 corresponding to the central area 81 and the edge area 82, so that the surface absorptivity of the sub-insulation plate 50 in the high-temperature area 500 is larger, making it easier to absorb heat, while the surface absorptivity of the first low-temperature area 501 and the second low-temperature area 502 is small, making it not easy to absorb heat, and more heat is reflected. As a specific implementation method, the first low-temperature area 501 and the second low-temperature area 502 are polished mirror-smooth, with a surface roughness between 0.01 μm and 0.1 μm and an absorptivity between 0.1 and 0.3, and the high-temperature area 500 is treated by sandblasting, with a surface roughness between 5 μm and 10 μm and an absorptivity between 0.7 and 0.9.

[0054] In some other embodiments, the present invention optimizes the temperature uniformity of the substrate to be heated in the high-temperature reaction device 1 through the coordinated regulation of the comprehensive thermal conductivity (coarse adjustment) and the surface absorptivity (fine adjustment). The following provides the specific steps for roughly adjusting the thermal conductivity effect of the sub-insulation plate 50 using the comprehensive thermal conductivity and then finely adjusting the thermal conductivity effect using the surface absorptivity. First, the first insulation plate 5 is divided into blocks in the radial and circumferential directions according to the areas corresponding to different temperatures of the base 8, and divided into multiple sub-thermal conduction plates. The shapes and intervals of the sub-thermal conduction plates are as described above, and are divided into a high-temperature area 500, a first low-temperature area 501, and a second low-temperature area 502; Second step, select the material of the sub-insulation plate 50. The high-temperature area 500 uses a material with a high thermal conductivity, and the first low-temperature area 501 and the second low-temperature area 502 use materials with a low thermal conductivity; Third step, set the thickness of the sub-insulation plate 50. The sub-insulation plate 50 in the high-temperature area 500 is thickened or set as a convex shape, and the sub-insulation plate 50 in the first low-temperature area 501 and the second low-temperature area 502 is thinned or set as a flat shape; After the above settings are completed, the rough adjustment of the heat dissipation effect of the first heat insulation plate 5 is realized. The distribution effect is verified through simulation or experiment. It is preferred to verify the temperature difference distribution effect through simulation. If the effect is higher than expected (such as the temperature difference > ±10°C), it is necessary to readjust the material or the block ratio. The experiment requires actual manufacturing and measuring the temperature distribution of the base material through an infrared thermal imager or a thermocouple; In the fourth step, based on the above temperature distribution effect, the surface absorptivity of the sub-heat insulation plate 50 is finely adjusted (microscopic radiation optimization). According to the radiation absorption formula q = βG, the absorptivity β is adjusted to balance the heat absorption. Among them, the high-temperature area 500 is treated with a rough surface to increase the surface absorptivity and increase the surface heat absorption. The first low-temperature area 501 and the second low-temperature area 502 are treated with a smooth surface to reduce the surface absorptivity and reduce the surface heat absorption; In the fifth step, the surface absorptivity value of the sub-heat insulation plate 50 is further adjusted, and simulation verification is carried out to ensure that the temperature difference further meets the requirements; In the sixth step, according to the simulation effect, the actual sub-heat insulation plate 50 is partitioned and processed. The overall first heat insulation plate 5 is divided into different regions in the radial / circumferential direction for different roughness processing; or the surface roughness of a single sub-heat insulation plate 50 is directly differentiated; In the seventh step, the effect is verified or further finely adjusted. Among them, after the actual production and installation are completed, the temperature of the base plate is measured again. If there are still temperature differences that need to be avoided locally, the specific sub-heat insulation plate 50 can be subjected to secondary surface treatment (such as local sandblasting).

[0055] In addition, in order to further improve the heat insulation or heat dissipation effect, the present application can also install a second heat insulation plate 32 on the side wall 30 or the bottom of the reaction cavity 3. As a specific implementation manner, a second heat insulation plate 32 is provided on the side wall of the reaction cavity 3. The second heat insulation plate 32 is arranged around the base 8 so that the heat radiated from the base 8 to the side wall is blocked by the second heat insulation plate 32.

[0056] The present application does not make special limitations on the structure of the second heat insulation plate 32. In some embodiments, the second heat insulation plate 32 includes a longitudinal heat insulation plate and a transverse heat insulation plate. The longitudinal heat insulation plate and the transverse heat insulation plate are integrally connected. The longitudinal heat insulation plate extends around the base 8 and is arranged at intervals corresponding to the side wall of the reaction cavity 3 so as to space the base 8 from the side wall; the transverse heat insulation plate is arranged in a ring shape at the top of the reaction cavity 3, so that the second heat insulation plate 32 has a cavity opening at the top. The first heat insulation plate 5 covers the cavity opening, so that an insulation space 33 is formed between the first heat insulation plate 5, the second heat insulation plate 32 and the base 8. The material of the second heat insulation plate can be the same as or different from the material of the first heat insulation plate.

[0057] The covering areas of the first heat insulation plate 5 and the second heat insulation plate 32 may not completely cover the cavity wall surface. According to the actual heat transfer requirements, the overall outer diameter of the first heat insulation plate 5 can be reduced, or the middle part can be removed to allow the gas flow gap to be in direct contact with the cavity wall, and the heat dissipation in the area without the heat insulation plate is reduced through the low thermal conductivity of the fluid. The overall height of the second heat insulation plate 32 can be reduced so that it does not completely cover the side wall of the cavity, thereby changing its heat insulation effect on the base plate area.

[0058] As a specific implementation manner, at least one second mounting hole 511 is further formed in the annular partition plate 51 for the detection probe of the temperature sensor to penetrate through the second mounting hole 511 to detect the temperature inside the reaction cavity 3.

[0059] The second mounting hole 511 is located at the interval between the plurality of annular partition plates 51 and corresponds to the base plate area 80 on the base. Arranging at the interval can utilize the existing structure interval to reduce additional openings; the diameter of the second mounting hole 511 is preferably 3 mm to 6 mm to meet the field of view requirements of the infrared probe; the second mounting hole 511 is a tapered hole, and / or the inner wall of the second mounting hole 511 is polished to increase the reflectivity and reduce the thermal radiation reflection interference to avoid forming local hot spots; a heat insulation sleeve (such as a ceramic bushing) can also be nested inside the second mounting hole 511 to block the additional heat dissipation caused by gas flow convection; to offset the local heat dissipation difference caused by the opening, the surface roughness of the annular partition plate 51 provided with the second mounting hole 511 is greater than that of the annular partition plate 51 without the second mounting hole 511, or the surface absorptivity of the sub-heat insulation plate 50 is increased within 3 mm to 5 mm around the second mounting hole 511 (such as increasing from 0.3 to 0.5) to compensate for the heat loss by enhancing radiation absorption.

[0060] The high-temperature reaction device 1 further includes a spraying module 7. The spraying module 7 includes an air inlet pipe body 71 and a spraying head 70. The air inlet pipe body 71 is connected to the spraying head 70. The air inlet pipe body 71 has at least one air inlet channel 710. The spraying head 70 has a spraying surface with a plurality of spraying holes. The air inlet channel 710 is communicated with the spraying holes, so that the gas in the air inlet channel 710 is sprayed onto the reaction cavity 3 through the spraying surface; a spraying mounting hole 810 is formed in the first heat insulation plate 5, and the air inlet pipe body 71 penetrates through the cavity wall of the reaction cavity 3 and the corresponding spraying mounting hole, so that the spraying head 70 is arranged on the side of the first heat insulation plate 5 close to the base 8.

[0061] As a specific embodiment, the reaction chamber 3 includes a first chamber cover 2 disposed at the top. The first chamber cover 2 has an outer surface and an inner surface disposed opposite to each other. The first heat insulation plate 5 is disposed on the inner surface. A plurality of first liquid cooling channels 20 are disposed in the first chamber cover 2. The plurality of first liquid cooling channels 20 are arranged along the radial direction of the base 8. The inner surface corresponds to the front surface of the base 8. For the case where the temperature at the center and the edge of the base plate is low and the internal temperature from the center to the edge is high, the designed first heat insulation plate 5 is also required to correspond to a low heat transfer capacity at the center and the edge and a high internal heat transfer capacity from the center to the edge. Therefore, it is necessary that the water cooling channels have a low heat dissipation capacity at the center and the edge and a high internal heat dissipation capacity from the center to the edge. As a preference, the number of the first liquid cooling channels 20 at the position corresponding to the base plate area 80 is greater than the number of the first liquid cooling channels 20 at the positions corresponding to the central area 81 and the edge area 82. In some embodiments, the reaction chamber 3 includes a second chamber cover 4 disposed at the bottom. A plurality of second liquid cooling channels are disposed in the second chamber cover 4 for cooling the bottom area of the reaction chamber. Side cooling channels 301 are further disposed in the side wall of the reaction chamber for cooling the side wall. The first chamber cover 2, the second chamber cover 4 and the side wall 30 enclose to form the reaction chamber 3.

[0062] A plurality of base plates are disposed on the base 8. The plurality of base plates are used to carry a plurality of wafers. The base plates are driven by the base 8 to rotate around the center of the base 8, and the base plates also rotate around their own centers.

[0063] The high-temperature reaction device 1 further includes a heating source 9. The heating source 9 is disposed on the back surface of the base 8. The heating source 9 heats the base plate by heating the base 8. In some embodiments, the high-temperature reaction device 1 further includes a support base 91. The support base 91 is disposed in the reaction chamber 3 for supporting the heating source 9.

[0064] In some embodiments, the high-temperature reaction device 1 further includes a heat insulation bottom plate 31. The heat insulation bottom plate 31, the first heat insulation plate and the second heat insulation plate enclose to form a sealed chamber.

[0065] The high-temperature reaction device further includes a support cylinder 11. The support cylinder 11 is used to drive the base 8 to rotate.

[0066] The high-temperature reaction equipment provided by the present application also has the following beneficial effects: improving temperature uniformity: by optimizing the surface treatment, material selection, and structural design of the heat insulation board, the temperature uniformity of the surface of the object to be heated is significantly improved. Improving process effects: The improvement of temperature uniformity directly enhances the excellence of process effects, especially applicable to the fields of high-precision semiconductor manufacturing and material synthesis. Enhancing equipment flexibility: The detachable heat insulation board design makes the equipment easier to install, maintain, and locally optimize, adapting to different process requirements. Reducing the risk of thermal deformation: By reasonably designing the minimum thickness of the heat insulation board, the thermal deformation caused by the working environment temperature is effectively reduced, improving the stability and service life of the equipment. Energy conservation and consumption reduction: Optimized heat transfer paths and heat dissipation conditions reduce energy losses and lower the operating cost of the equipment. The present invention effectively solves the problem of uneven temperature distribution on the surface of the object to be heated in the prior art by providing a high-temperature reaction equipment with a detachable heat insulation board and a heat transfer optimization method based on the heat insulation board, significantly improving the excellence of process effects and the flexibility of the equipment, and having broad application prospects.

[0067] The following further illustrates the present application with reference to embodiments.

[0068] Embodiment Embodiment 1 First step: Divide the first heat insulation board into seven circular sub-heat insulation boards from the inside to the outside (zones A, B, C, D, E, F, and G from the inside to the outside). The material of the sub-heat insulation board in zone A is aluminum alloy, with a thickness of 5 mm; the materials of the sub-heat insulation boards in zones B, C, and D are copper, and the thicknesses of the sub-heat insulation boards in zones B and D are 8 mm, and the thickness of the sub-heat insulation board in zone C is 10 mm; the materials of the sub-heat insulation boards in zones E, F, and G are stainless steel; the thicknesses of the sub-heat insulation boards in zones E, F, and G are 5 mm; Second step: Set the surface of the first heat insulation board set in the previous step to a rough polishing state, set the absorptivity to 0.4, and simulate to obtain a temperature difference of 16 °C. Figure 8 This corresponds to a rough adjustment.

[0069] Embodiment 2 On the basis of Embodiment 1, perform fine adjustment: Further set the surface absorptivity of the sub-heat insulation boards. Sandblast the surfaces of the sub-heat insulation boards in zones B, C, and D, set the absorptivity to 0.7; polish the surfaces of the sub-heat insulation boards in zones E, F, and G, and set the absorptivity to 0.1. Simulate to obtain a temperature difference of 11 °C. Figure 8 This corresponds to a fine adjustment.

[0070] Embodiment 3 On the basis of Embodiments 1 and 2, further fine-tune by adding a second heat insulation board to the side wall: Add 316 stainless steel with a thickness of 2.5 mm to the side wall, polish the surface, with an absorptivity of 0.1, and simulate to obtain a temperature difference of 9 °C. Figure 8The corresponding one in [it] is fine-tuning.

[0071] Comparative example Comparative example 1 Set the first heat insulation board to the same material (aluminum alloy) with a thickness of 5 mm, the surface is in a rough polishing state, the absorption rate is 0.4, and the temperature difference between the base plate surfaces obtained by simulation is 19 °C. Figure 8 The corresponding one in [it] is the original state.

[0072] Here, for Figure 8 make corresponding explanations. The abscissa in the figure refers to selecting Figure 3 any one base plate on the base and the edge area of the base plate as the radial distance range for simulation. It can be seen that the temperatures at the minimum and maximum radial distances are relatively low, corresponding to the two edge areas along the radial direction on both sides of the base plate centered on the base plate, while the temperature between the minimum and maximum radial distances is relatively high, corresponding to the base plate area.

[0073] Example 4 Set the first heat insulation board to an integral structure, the material is aluminum alloy 6061-T6, the absorption rate of the overall lower surface is about 0.3, the average temperature of the heat source is 1000 °C, the water-cooled temperature of the cavity wall is 20 °C, the inner diameter of the cavity is 110 mm, the distance between the upper and lower covers inside the cavity is 30 mm, the thickness of the first heat insulation board is 5 mm, and the outer diameter is 110 mm. The simulation results show that the radial temperature distribution of the substrate to be heated is as Figure 9 shown (the "before modification" in the figure), the radial temperature difference is 8 °C, and it shows a distribution trend of high temperature in the middle and low temperature at the edges.

[0074] Example 5 On the basis of Example 4, adjust the surface treatment method of the first heat insulation board from the inside to the outside, modify the surface absorption rate of the first heat insulation board, keep the absorption rate within the range of 0-85 mm of the first heat insulation board at 0.3, and change the absorption rate of the lower surface within the range of 85-110 mm of the first heat insulation board to 0.05. Further carry out simulation analysis. The simulation results are as Figure 9 shown (after modification). The radial temperature difference of the substrate to be heated is reduced to 6 °C. The temperature difference is reduced, and its surface temperature is increased by 10 °C as a whole, reducing the energy transmission loss.

[0075] These are only the specific implementation manners of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that the present invention includes but is not limited to the content described in the drawings and the above specific implementation manners. Any modification that does not deviate from the functional and structural principles of the present invention will be included in the scope of the claims.

Claims

1. A high-temperature reaction device, characterized in that, The high temperature reaction equipment (1) comprises: reaction chamber (3); A base (8), the base (8) being arranged at the bottom of the reaction chamber (3) for supporting a substrate, the base (8) comprising a central area (81), a base plate area (80), and an edge area sequentially arranged radially close to a side wall of the reaction chamber; at least one first heat insulation board (5), the first heat insulation board (5) being arranged on the top surface of the reaction chamber (3), A baffle (6), the baffle (6) is opposite to the base, the first heat insulation board (5) is arranged on a side of the baffle (6) away from the base, an air flow gap is provided between the first heat insulation board (5) and the baffle (6), the first heat insulation board (5) includes a plurality of sub-heat insulation boards (50), the comprehensive thermal conductivity of the sub-heat insulation boards corresponding to the base plate area (80) is greater than the comprehensive thermal conductivity of the sub-heat insulation boards corresponding to the central area (81) and the edge area, wherein, The comprehensive thermal conductivity of the sub-insulation board (50) satisfies the following formula: k eff = (t1 * k1 / t3) + (t2 * k2 / t3) where k eff is the comprehensive thermal conductivity, t1 is the thickness of the sub-insulation board, k1 is the thermal conductivity of the sub-insulation board, t2 is the thickness of the air flow gap, k2 is the thermal conductivity of the air flow in the air flow gap, and t3 is the total thickness of the sub-insulation board and the air flow gap.

2. The high-temperature reaction equipment according to claim 1, wherein The thickness of the sub-insulation board (50) corresponding to the base plate area (80) is greater than the thickness of the sub-insulation board (50) corresponding to the central area (81) and the edge area.

3. The high-temperature reaction equipment according to claim 1, characterized in that The material of the sub-insulation plate (50) includes at least one of graphite felt, ceramics and metal, the thermal conductivity of the material of the sub-insulation plate (50) corresponding to the base plate area (80) is greater than the thermal conductivity of the material of the sub-insulation plate (50) corresponding to the central area (81) and the edge area, and the material of the baffle (6) includes graphite felt and / or quartz.

4. The high-temperature reaction device according to claim 1, characterized in that, A second heat insulation plate (32) is provided on the side wall of the reaction chamber (3), and the second heat insulation plate (32) is provided around the base (8), so that the heat emitted from the base (8) to the side wall is blocked by the second heat insulation plate (32).

5. The high-temperature reaction device according to claim 4, characterized in that, The second heat insulation board (32) comprises a longitudinal heat insulation board and a transverse heat insulation board, wherein the longitudinal heat insulation board and the transverse heat insulation board are connected to form a whole. The longitudinal heat insulation plate is extended around the base (8) and is spaced apart from the side wall of the reaction chamber so as to separate the base (8) from the side wall; The transverse heat insulation plate is arranged in a ring shape at the top of the reaction chamber, so that the second heat insulation plate has a chamber opening at the top, and the first heat insulation plate (5) covers the chamber opening, so that a heat insulation space (33) is formed between the first heat insulation plate, the second heat insulation plate and the base.

6. The high-temperature reaction equipment according to claim 1, characterized in that, The surface roughness of the sub-insulation board (50) corresponding to the base plate area (80) is greater than the surface roughness of the sub-insulation board (50) corresponding to the central area (81) and the edge area.

7. The high-temperature reaction equipment according to claim 1, characterized in that, In a radial direction of the first heat insulation board (5), a plurality of the sub-heat insulation boards (50) are arranged in a ring shape with the central area (81) as the center, and a first interval is provided between adjacent sub-heat insulation boards (50); In the circumferential direction of the first heat insulation plate (5), at least one of the sub heat insulation plates (50) includes a plurality of annular sub plates, and there is a second interval between adjacent annular sub plates in the circumferential direction of the first heat insulation plate (5).

8. The high-temperature reaction device according to claim 7, characterized in that, The first interval satisfies the following formula: where d is the first interval, α is the coefficient of thermal expansion of the material of the sub heat insulation plate, L is the dimension of the sub heat insulation plate in the radial direction of the first heat insulation plate, ∆T is the difference between the operating temperature and the installation temperature δ is a safety margin, and the range of δ is between 0.1 mm and 0.5 mm; The second interval satisfies the following formula: where d2 is the second interval L2 is the dimension of the sub heat insulation plate in the circumferential direction of the first heat insulation plate.

9. The high-temperature reaction equipment according to claim 7, wherein A deformable heat conducting member is arranged in the first interval and the second interval.

10. The high-temperature reaction device according to claim 7, characterized in that, A plurality of first mounting holes (52) are formed in the annular sub plate for mounting screws, and the plurality of first mounting holes (52) are arranged at a third interval in the circumferential direction of the first heat insulation plate (5), so that the plurality of annular sub plates are detachably fixed to the cavity wall of the reaction cavity (3) through the screws and the first mounting holes (52).

11. The high-temperature reaction device according to claim 10, characterized in that, The third intervals of the plurality of first mounting holes (52) in the circumferential direction of the first heat insulation plate (5) are the same, and the third interval satisfies the following formula: d3 ≥ 3×t4+D1 where d3 is the third interval, t4 is the thickness of the annular sub plate, and D1 is the diameter of the first mounting hole.

12. The high-temperature reaction equipment according to claim 7, characterized in that, At least one second mounting hole (511) is formed in the annular sub plate for allowing a detection probe of a temperature sensor to penetrate through the second mounting hole (511) to detect the temperature inside the reaction cavity.

13. The high-temperature reaction equipment according to claim 12, characterized in that, The second mounting hole (511) is located at the interval between the plurality of annular sub plates and corresponds to the base plate area; The second mounting hole includes a tapered hole, and / or the inner wall of the second mounting hole has a polished surface to increase the reflectivity, and / or a heat insulation sleeve is nested in the second mounting hole; The surface roughness of the annular sub plate provided with the second mounting hole is greater than the surface roughness of the annular sub plate not provided with the second mounting hole.

14. The high-temperature reaction equipment according to any one of claims 1 to 13, characterized in that, The high-temperature reaction device further includes a spraying module (7), the spraying module includes an air inlet pipe body (71) and a spraying head (70), the air inlet pipe body (71) is connected to the spraying head (70), the air inlet pipe body has at least one air inlet channel (710), the spraying head has a spraying surface, and a plurality of spraying holes are formed in the spraying surface, and the air inlet channel (710) is communicated with the spraying holes, so that the gas in the air inlet channel is sprayed onto the reaction cavity (3) through the spraying surface; The first heat insulation plate (5) is provided with a spraying mounting hole (810), and the air inlet pipe body (71) penetrates through the cavity wall of the reaction cavity (3) and the corresponding spraying mounting hole, so that the spraying head is arranged on the side of the first heat insulation plate (5) close to the base.

15. The high-temperature reaction equipment according to any one of claims 1 to 13, characterized in that, The reaction chamber (3) includes a first chamber cover (2) disposed at the top. The first chamber cover (2) has an outer surface and an inner surface disposed opposite to each other. The first heat insulation plate (5) is disposed on the inner surface. A plurality of first liquid cooling channels (20) are provided in the first chamber cover (2). The plurality of first liquid cooling channels (20) are arranged along the radial direction of the base. The inner surface corresponds to the front surface of the base, and the number of the first liquid cooling channels at the position corresponding to the base plate area (80) is greater than the number of the first liquid cooling channels at the positions corresponding to the central area (81) and the edge area.

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