Semiconductor manufacturing apparatus for epitaxial process
By using a combination of edge ring and laser beam transmitting plate in a semiconductor manufacturing device, the semiconductor substrate is uniformly heated by using a vertical cavity surface emission laser module, which solves the problem of temperature unevenness in the epitaxial process and improves the uniformity and efficiency of device formation.
Patent Information
- Application Number
- CN202380079019.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-01
- Publication Date
- 2025-08-01
AI Technical Summary
In the epitaxial process, it is difficult for the existing semiconductor manufacturing device to achieve uniform heating of the semiconductor substrate, resulting in a temperature on the outside of the substrate being lower than the inside, affecting device formation.
The edge ring is used to support the outside of the semiconductor substrate, and combine the laser beam transmitting plate and the laser beam guide part to irradiate the laser beam to the edge ring and the substrate surface through the vertical cavity surface emission laser module to form a heating substrate, a heating edge and a heating support area to ensure uniform heating.
The overall temperature uniformity of the semiconductor substrate is achieved, the release of heat through the edge ring is reduced, and the uniformity and efficiency of the device formation area is improved.
Smart Images
Figure CN120418484A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to a semiconductor manufacturing apparatus for an epitaxial process that vapor-deposits a thin film on a flat substrate including a semiconductor substrate using an epitaxial process. Background Art
[0002] A semiconductor substrate such as a semiconductor substrate or a glass substrate for a flat display device can be made into a semiconductor or a flat display module through heat treatment processes such as an epitaxial process, a thin film crystallization process, an ion implantation process, or an activation process.
[0003] The epitaxial process is a process of growing a thin film required on the surface of a semiconductor substrate, and can be performed by a semiconductor manufacturing apparatus having a process chamber. The epitaxial process can be performed by injecting a process gas into the process chamber maintained in a vacuum state and heating the semiconductor substrate to a temperature above a specified temperature. The semiconductor substrate needs to maintain a uniform overall temperature during the epitaxial process. Also, since the inside of the process chamber is maintained at a high temperature, it needs to have durability and heat resistance. Also, the process chamber needs to be sealed to prevent leakage of the process gas to the outside.
[0004] On the other hand, recently, a semiconductor manufacturing apparatus for performing the epitaxial process is attempting to use a vertical cavity surface emitting laser (VCSEL) device that heats a semiconductor substrate by irradiating a laser beam. A substrate heating unit formed by arranging a plurality of the vertical cavity surface emitting laser devices can irradiate a laser beam onto the lower surface of the semiconductor substrate to heat the semiconductor substrate. As semiconductor technology becomes more refined, the semiconductor substrate requires a small temperature deviation and a high temperature uniformity during the heating process. Since the outer lower surface of the semiconductor substrate is supported by a separate substrate holder, there is a possibility that relatively more heat is released to the area in contact with the substrate holder. Therefore, the outer temperature of the semiconductor substrate is lower than the inner temperature, and thus it cannot be used for device formation. Summary of the Invention
[0005] Technical Problem
[0006] An object of the present invention is to provide a semiconductor manufacturing apparatus for an epitaxial process that can uniformly heat a semiconductor substrate as a whole.
[0007] Technical Solution
[0008] The semiconductor manufacturing apparatus for an epitaxial process according to the present invention is characterized by comprising: a process chamber having an edge ring, a substrate holder, and a laser beam transmissive plate, wherein the edge ring supports the outer lower surface of the semiconductor substrate in such a manner as to expose the lower surface of the semiconductor substrate, the substrate holder supports the outer lower surface of the edge ring, and the laser beam transmissive plate is located below the semiconductor substrate; a substrate heating unit that irradiates a laser beam from a vertical cavity surface emitting laser module onto the lower surfaces of the semiconductor substrate and the edge ring through the laser beam transmissive plate; and a laser beam guiding unit that irradiates the laser beam from the vertical cavity surface emitting laser module onto the lower surface of the edge ring, wherein the substrate heating unit is divided into a heating substrate region, a heating edge region, and a heating support region where the vertical cavity surface emitting laser module is located, and the laser beam guiding unit guides and irradiates the laser beam irradiated from the vertical cavity surface emitting laser module located in the heating support region onto the lower surface of the edge ring.
[0009] Further, the edge ring extends along an outer direction from an upper portion of an inner circumferential surface, and an inner diameter thereof is smaller than an outer diameter of the semiconductor substrate. The substrate holder includes an upper holder having an edge ring support hole and an edge ring support step. An inner diameter of the edge ring support hole is smaller than an outer diameter of the edge ring, and the edge ring support step extends along an outer direction from an upper portion of an inner circumferential surface of the edge ring support hole and has an inner diameter larger than the outer diameter of the edge ring.
[0010] Further, based on a horizontal plane, a radiation rate per unit area of the edge ring may be equal to or greater than a radiation rate per unit area of the semiconductor substrate.
[0011] Further, the laser beam transmissive plate may have a transmissive substrate region, a transmissive edge region, and a transmissive support region corresponding to the heating substrate region, the heating edge region, and the heating support region, respectively. A lower surface of the laser beam guiding rod is located above the transmissive support region, and an upper surface thereof is located below the edge ring.
[0012] Further, an upper surface and a lower surface of the laser beam guiding rod may be horizontal planes, a central axis thereof is a straight line, and the central axis forms an angle less than 90° with the lower surface.
[0013] Further, the central axis of the laser beam guiding rod may form a vertical straight line at a lower portion and an inclined straight line at an upper portion, and the vertical straight line and the inclined straight line form an angle greater than 90°.
[0014] Further, the central axis of the laser beam guiding rod may form a vertical straight line at a lower portion, an inclined straight line in a middle portion, and a vertical straight line at an upper portion.
[0015] Further, the laser beam guiding rod may be made of quartz.
[0016] Effects of the Invention
[0017] In the semiconductor manufacturing apparatus for epitaxial process of the present invention, the substrate heating part formed by the vertical cavity surface emitting laser device heats the edge ring simultaneously, so that the semiconductor substrate can be heated evenly.
[0018] Moreover, in the semiconductor manufacturing apparatus for epitaxial process of the present invention, a laser beam is separately irradiated to the edge ring supporting the outside of the semiconductor substrate to heat it to a temperature similar to that of the semiconductor substrate. Thereby, the heat of the semiconductor substrate released through the edge ring is reduced, and the temperature of the semiconductor substrate can be made uniform.
[0019] In addition, in the semiconductor manufacturing apparatus for epitaxial process of the present invention, the edge ring supporting the outside of the semiconductor substrate is heated by the laser beam irradiated from the substrate heating part, so that no separate heating unit is required.
[0020] Furthermore, in the semiconductor manufacturing apparatus for epitaxial process of the present invention, the outside and inside of the semiconductor substrate can be heated evenly as a whole. Therefore, the area where devices are formed in the semiconductor substrate can be increased. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] Figure 1 It is a schematic structural diagram of a semiconductor manufacturing apparatus for epitaxial process according to an embodiment of the present invention.
[0022] Figure 2 It is Figure 1 a partially enlarged view of part "A" of
[0023] Figure 3 It is Figure 1 a horizontal cross-sectional view taken along B-B of
[0024] Figure 4 It is Figure 1 a partial perspective view of the substrate heating part of
[0025] Figure 5 It is a partial perspective view of the substrate heating part according to another embodiment of the present invention.
[0026] Figure 6 It is a partial perspective view of the substrate heating part according to another embodiment of the present invention.
[0027] Figure 7 It is a vertical cross-sectional view of the laser beam guiding part according to another embodiment of the present invention.
[0028] Figure 8 It is a vertical cross-sectional view of the laser beam guiding part according to another embodiment of the present invention.
[0029] Figure 9 It is for simulation Figure 1Results of the guiding direction and irradiation density of the laser beam of the laser beam guiding section.
[0030] Figure 10 For simulation Figure 7 Results of the guiding direction and irradiation density of the laser beam of the laser beam guiding section.
[0031] Figure 11 For simulation Figure 8 Results of the guiding direction and irradiation density of the laser beam of the laser beam guiding section.
[0032] Figure 12 For simulation of the irradiation density of the guiding direction of the laser beam in a state without a laser beam guiding section. Detailed implementation mode
[0033] Hereinafter, with reference to the embodiments and the drawings, the semiconductor manufacturing apparatus for an epitaxial process of the present invention will be described in more detail.
[0034] First, the structure of the semiconductor manufacturing apparatus for an epitaxial process according to an embodiment of the present invention will be described.
[0035] Figure 1 Is a schematic structural diagram of the semiconductor manufacturing apparatus for an epitaxial process according to an embodiment of the present invention. Figure 2 Is Figure 1 Partial enlarged view of "A" of Figure 3 Is Figure 1 Horizontal cross-sectional view of B-B of Figure 4 Is Figure 1 Partial perspective view of the substrate heating section of Figure 5 Is a partial perspective view of the substrate heating section according to still another embodiment of the present invention. Figure 6 Is a partial perspective view of the substrate heating section according to another embodiment of the present invention. Figure 7 Is a vertical cross-sectional view of the laser beam guiding section according to another embodiment of the present invention. Figure 8 Is a vertical cross-sectional view of the laser beam guiding section according to another embodiment of the present invention.
[0036] Referring to Figures 1 to 4 , the semiconductor manufacturing apparatus 10 for an epitaxial process according to an embodiment of the present invention may include a process chamber 100, a substrate heating section 200, and a laser beam guiding section 300. Further, the semiconductor manufacturing apparatus 10 for an epitaxial process may include a cooling gas injection section 400 and a substrate rotation section 500.
[0037] The semiconductor manufacturing apparatus 10 for an epitaxial process may use an epitaxial process to deposit a thin film on the surface of the semiconductor substrate a. For example, the semiconductor manufacturing apparatus 10 may be used to form a multi-layer thin film of [Si / SiGe x n on the semiconductor substrate a through an epitaxial process.
[0038] In addition, the semiconductor manufacturing apparatus 10 for the epitaxial process can be applied to semiconductor manufacturing processes such as a crystallization process, an ion implantation process, or an activation process. In addition to a semiconductor substrate a such as a wafer, the semiconductor manufacturing apparatus 10 for the epitaxial process can also be applied to a semiconductor substrate a such as a glass substrate. Further, the semiconductor manufacturing apparatus 10 for the epitaxial process can also be applied to a flexible substrate such as a resin film. Moreover, the semiconductor substrate a may include various devices or conductive patterns formed on its surface or inside.
[0039] The semiconductor manufacturing apparatus 10 for the epitaxial process can irradiate a laser beam generated from the substrate heating unit 200 to the semiconductor substrate a to heat the semiconductor substrate a. In the semiconductor manufacturing apparatus 10 for the epitaxial process, the substrate heating unit 200 for heating the semiconductor substrate a may include a plurality of vertical cavity surface emitting laser devices. The vertical cavity surface emitting laser devices can irradiate a laser beam of a single wavelength. For example, preferably, the vertical cavity surface emitting laser devices can be devices that irradiate a laser beam of a single wavelength of approximately 940 nm. Further, the vertical cavity surface emitting laser devices can be devices that irradiate laser beams of a plurality of wavelengths.
[0040] The semiconductor manufacturing apparatus 10 can directly support the outer lower surface of the semiconductor substrate a. Since the semiconductor manufacturing apparatus 10 can directly support the semiconductor substrate a, the semiconductor substrate a can be rapidly heated or cooled within the evaporation temperature range of the epitaxial process of 400 to 1000°C. Further, since the semiconductor manufacturing apparatus 10 can directly heat the semiconductor substrate a, even if a bending phenomenon of the semiconductor substrate a occurs during the epitaxial process, changes in the evaporation temperature and evaporation rate can be reduced.
[0041] The process chamber 100 may include an outer cover 110, an inner cover 120, an edge ring 130, a substrate holder 140, a laser beam transmissive plate 150, and an infrared transmissive plate 160.
[0042] The process chamber 100 may be formed with an upper chamber space 100a for placing the semiconductor substrate a on the upper side inside the outer cover 110 and performing heat treatment on it. The upper chamber space 100a may be formed above the inner cover 120 inside the outer cover 110 and can provide a space for placing the semiconductor substrate a and performing the epitaxial process. Further, the process chamber 100 may form a lower chamber space 100b between the outer cover 110 and the inner cover 120. The lower chamber space can provide a space for accommodating a part of the substrate rotating unit 500.
[0043] The semiconductor substrate a is inside the process chamber 100 and can be supported by the substrate holder 140 and the edge ring 130 in a manner that exposes its lower surface. The process chamber 100 irradiates a laser beam generated by the substrate heating unit 200 located outside onto the lower surface of the planar substrate located inside. The process chamber 100 allows the laser beam to transmit through the laser beam transmission plate 150 and irradiate the lower surface of the semiconductor substrate a placed on the substrate holder 140 and the edge ring 130.
[0044] The outer cover 110 may include an outer upper side wall body 111, an outer lower side wall body 113, an upper plate 115, and a lower plate 117. The outer cover 110 may be integrally formed in a cylindrical shape with a hollow interior as a whole. The outer cover 110 may be generally formed in a cylindrical shape, a square cylindrical shape, a pentagonal cylindrical shape, or a hexagonal cylindrical shape. The outer cover 110 may be formed such that its horizontal cross-sectional area is larger than the area of the semiconductor substrate a placed inside. The outer upper side wall body 111 and the outer lower side wall body 113 may be formed integrally.
[0045] The outer cover 110 may be formed of a metal material that is durable against breakage caused by pressure and temperature changes so as to cope with positive and negative pressure conditions and rapid temperature change conditions occurring during the manufacturing process. Also, the outer cover 110 may be formed of a metal material that is corrosion-resistant to the process gases used in the manufacturing process. The outer cover 110 may be formed of a metal material such as stainless steel, invar alloy, or Hastelloy.
[0046] The outer upper side wall body 111 may be formed in a cylindrical shape with a hollow interior. The outer upper side wall body 111 may be formed in a cylindrical shape, a square cylindrical shape, a pentagonal cylindrical shape, or a hexagonal cylindrical shape. The outer upper side wall body 111 may form a space inside for accommodating a part of the substrate rotation unit 500, the substrate holder 140, and the semiconductor substrate a.
[0047] The outer upper side wall body 111 may include a process gas supply hole 111a and a process gas discharge hole 111b. Also, the outer upper wall body may further include a cooling gas discharge hole 111c.
[0048] The process gas supply hole 111a may penetrate from the outside of the outer upper side wall body 111 to the upper space 100a of the chamber on one side of the outer upper side wall body 111. The inner end of the process gas supply hole 111a may be formed parallel at the same height as the upper surface of the semiconductor substrate a. The process gas supply hole 111a may be formed in a linear shape, a curved shape, or a bent shape according to the position formed in the outer upper side wall body 111. The process gas supply hole 111a may provide a flow path for supplying process gas to the upper space 100a of the chamber.
[0049] The process gas discharge hole 111b may be formed on the other side of the outer upper side wall body 111, penetrating from the upper space 100a of the chamber of the outer upper wall body to the outside. The process gas discharge hole may be located below the process gas supply hole 111a. The process gas discharge hole 111b may be formed in a straight shape, a curved shape, or a bent shape according to the position formed on the outer upper side wall body 111. The process gas discharge hole 111b may provide a flow path for discharging from the upper space 100a of the chamber to the outside.
[0050] The process gas may flow in through the process gas supply hole 111a and flow in the space between the upper surface of the semiconductor substrate a and the infrared transmissive plate 160 and be vapor-deposited into a thin film. The process gas that has not reacted in the process gas and the by-product gas generated after vapor deposition may be discharged to the outside of the process chamber 100 through the process gas discharge hole 111b.
[0051] The cooling gas discharge hole 111c may be formed above the infrared transmissive plate 160, penetrating from the inside to the outside of the outer upper side wall body 111. The cooling gas discharge hole 111c may provide a flow path for discharging the cooling gas jetted onto the upper part of the infrared transmissive plate 160 to the outside. That is, the cooling gas discharge hole 111c may provide a flow path for discharging the cooling gas flowing into the cooling gas jetting space 100c described below to the outside.
[0052] The outer lower side wall body 113 may be formed in a cylindrical shape with a hollow interior. The outer upper side wall body 111 may be formed in a cylindrical shape, a square cylindrical shape, a pentagonal cylindrical shape, or a hexagonal cylindrical shape. The outer lower side wall body 113 may be formed in a shape that is the same as or similar to that of the outer upper side wall body 111. The diameter or width of the outer lower side wall body 113 may be smaller than the diameter or width of the outer upper side wall body 111. The outer lower side wall body 113 may be coupled to the lower part of the outer upper side wall body 111. The outer lower side wall body 113 may form a space inside for accommodating a part of the inner outer cover 120 and the substrate rotating unit 500.
[0053] The upper plate 115 may be formed in a plate shape corresponding to the upper end planar shape of the outer upper side wall body 111. The upper plate 115 may be coupled to the upper part of the outer upper side wall body 111 and cover the upper part of the outer upper side wall body 111. The upper plate 115 may be formed of a metal material such as stainless steel, invar alloy, or hastelloy.
[0054] The upper plate 115 may include an upper through-hole 115a. The upper through-hole 115a may be formed to penetrate from the upper surface to the lower surface on the inner side of the upper plate 115. The upper through-hole 115a may be formed to have a diameter or width required to expose the entire infrared transmission plate 160. The upper through-hole 115a may form a space for exposing the upper portion of the infrared transmission plate 160 and allowing the cooling gas ejected from the cooling gas ejection unit 400 to flow toward the upper surface of the infrared transmission plate 160. Therefore, the upper through-hole 115a may form an upper cooling gas flow path 100e above the infrared transmission plate 160. The cooling gas may be nitrogen (N2) gas, argon (Ar) gas, or dry air. The cooling gas may cool the infrared transmission plate 160.
[0055] The upper plate 115 may further include an annular upper support ring 116 extending downward along the inner lower surface. The upper support ring 116 may be formed with a predetermined height and width. The upper support ring 116 may be coupled to the infrared transmission plate 160 in such a manner that its lower surface contacts the outer upper surface of the infrared transmission plate 160. The upper support ring 116 may increase the height of the upper cooling gas flow path 100e to increase the residence time of the cooling gas in the upper cooling gas flow path 100e. Therefore, the amount of the cooling gas used may be reduced and the infrared transmission plate 160 may be effectively cooled.
[0056] The lower plate 117 may be formed in a plate shape corresponding to the lower end planar shape of the outer lower side wall body 113. The lower plate 117 may include a lower through-hole 117a penetrating from the upper surface to the lower surface on the inner side. The lower plate 117 may be formed as a circular ring or a quadrilateral ring having a predetermined width. The lower plate 117 may be coupled to the lower end of the outer lower side wall body 113 and shield the outside of the outer lower side wall body 113. The lower plate 117 may seal the space between the outer lower side wall body 113 and the lower portion of the inner outer cover 120. That is, the lower plate 117 may seal the lower portion of the chamber lower space 100b. The lower plate 117 may be formed of a metal material such as stainless steel, invar alloy, or hastelloy.
[0057] The inner outer cover 120 may be formed in a cylindrical shape with a hollow interior, and may be formed as a cylindrical shape, a rectangular prism shape, a pentagonal prism shape, or a hexagonal prism shape. The outer diameter or outer width of the inner outer cover 120 may be smaller than the inner diameter or inner width of the outer lower side wall body 113. Also, the height of the inner outer cover 120 may be smaller than the height of the outer lower side wall body 113. Also, the upper end of the inner outer cover 120 may be formed to have a height sufficient to place the semiconductor substrate a inside the process chamber 100. Also, the diameter or width of the inner outer cover 120 may be larger than the diameter or width of the semiconductor substrate a. Also, the inner outer cover 120 may have a horizontal area larger than that of the semiconductor substrate a.
[0058] Also, the lower side of the inner housing 120 may be generally located at the same height as the lower side of the outer housing 110. The lower end of the inner housing 120 may be combined with the inner side of the lower plate 117. The space between the outer side of the inner housing 120 and the inner side of the outer housing 110 may be sealed by the lower plate 117. The inner housing 120 may be formed of a metal material such as stainless steel, invar alloy, or hastelloy.
[0059] The edge ring 130 may be integrally formed in a ring shape. The edge ring 130 may be formed to have a diameter with an inner diameter smaller than the outer diameter of the semiconductor substrate a. The upper surface of the edge ring 130 may be in the same plane as the upper surface of the semiconductor substrate a. The edge ring 130 may support the outer lower surface of the semiconductor substrate a. In this case, the edge ring 130 can support the semiconductor substrate a in such a way that the lower surface of the semiconductor substrate a is exposed.
[0060] The edge ring 130 may include a substrate support step 131 and an edge lower groove 133. On the other hand, the substrate support step 131 may have various vertical cross-sections. The edge ring 130 may include a substrate support step 131 and have edge lower grooves 133 in various shapes.
[0061] The substrate support step 131 may extend from the upper part of the inner circumferential surface in the outward direction. The inner diameter of the substrate support step 131 may be larger than the outer diameter of the semiconductor substrate a. Therefore, the substrate support step 131 can stably place and support the outer side of the semiconductor substrate a.
[0062] The edge lower groove 133 may be formed from the lower surface of the edge ring 130 in the upward direction to a predetermined depth. Also, the edge lower groove 133 may be formed in a ring shape with a predetermined width outside the substrate support step 131. The edge lower groove 133 can make the thickness of the edge ring 130 uniform as a whole.
[0063] Based on the horizontal plane, the radiation rate per unit area of the edge ring 130 may be equal to or greater than that of the semiconductor substrate a. For this purpose, the edge ring 130 may be formed with a specified thickness by reflecting the radiation rate of the material. For example, the edge ring 130 may be formed of a ceramic material. The edge ring 130 may be formed of SiC material. The thickness of the edge ring 130 may be less than the thickness of the semiconductor substrate a. For example, when the thickness of the semiconductor substrate a is 0.7 mm, the thickness of the edge ring 130 may be 0.4 mm. In this case, based on the same thickness, the radiation rates of the semiconductor substrate a and the edge ring 130 may be 0.6 - 0.7 and 0.7 - 0.8 respectively for the edge ring 130. When the same laser beam as that of the semiconductor substrate a is irradiated, the degree of temperature reduction of the edge ring 130 may be relatively the same or similar.
[0064] The substrate support 140 may include an upper support 141 and a side support 143. The substrate support 140 may be located outside the semiconductor substrate a above the inner housing 120 and support the outer lower surface of the edge ring 130. Also, the substrate support 140 may expose the lower surface of the semiconductor substrate a. Also, the substrate support 140 may extend along the lower space 100b of the chamber and be combined with the substrate rotation unit 500. The substrate support 140 may rotate the edge ring 130 and the semiconductor substrate a by the action of the substrate rotation unit 500. Hydrogen may be supplied separately to the inner space of the substrate support 140. The hydrogen may prevent process gas from flowing into the inner space of the substrate support 140. Therefore, the hydrogen may prevent the process gas from being vapor-deposited into a thin film on the lower surface of the semiconductor substrate a. Although not specifically shown, the hydrogen may flow into the inner part of the substrate support 140 through a separate inlet.
[0065] The upper support 141 may have an edge ring support hole 141a and an edge ring support step 141b on the inner side. The upper support 141 may expose the lower surface of the edge ring 130 and support the lower outer side of the edge ring 130. The upper support 141 may be formed to have a diameter or width greater than that of the edge ring 130.
[0066] The edge ring support hole 141a may penetrate the upper surface and the lower surface from the center of the upper support 141. The inner diameter of the edge ring support hole 141a may be greater than the outer diameter of the edge ring 130, so as to support the lower outer side of the edge ring 130.
[0067] The edge ring support step 141b can extend from the upper part of the inner circumferential surface of the edge ring support hole 141a along the outer side direction. The inner diameter of the edge ring support step 141b can be larger than the outer diameter of the edge ring 130. Therefore, the edge ring support step 141b can stably place and support the outer side of the edge ring 130.
[0068] The side bracket 143 can be generally formed in a cylindrical shape with openings at the upper and lower parts, and its shape can correspond to the shape of the inner outer cover 120. For example, when the inner outer cover 120 is formed in a cylindrical shape, the side bracket 143 can be formed in a corresponding cylindrical shape. The side bracket 143 can be provided in the entire upper space 100a and lower space 100b of the chamber. The upper part of the side bracket 143 can be coupled to the outside of the upper bracket 141, and the lower part can extend along the lower space 100b of the chamber and be combined with the substrate rotating part 500. Therefore, the side bracket 143 can rotate through the substrate rotating part 500 and rotate the upper bracket 141.
[0069] The laser beam transmission plate 150 can be coupled to the upper part of the inner outer cover 120 and seal the upper part of the inner outer cover 120. The laser beam transmission plate 150 can be located below the semiconductor substrate a. The laser beam transmission plate 150 can be formed of a transparent plate such as quartz or glass that transmits laser beams. The laser beam transmission plate 150 can provide a path for irradiating the laser beam irradiated from the substrate heating part 200 to the lower surface of the semiconductor substrate a. The area of the laser beam transmission plate 150 can be larger than the area of the semiconductor substrate a. For example, the diameter or width of the laser beam transmission plate 150 can be larger than the diameter or width of the semiconductor substrate a.
[0070] The upper surface of the laser beam transmission plate 150 can be divided into a transmission substrate area 150a, a transmission edge area 150b, and a transmission support area 150c. The multiple areas are areas that can be set in a positional relationship corresponding to the semiconductor substrate a, the edge ring 130, and the substrate bracket 140 located above. The transmission substrate area 150a can be the area located below the semiconductor substrate a. And, the transmission edge area 150b can be the area located below the edge ring 130. And, the transmission support area 150c can be the area located below the substrate bracket 140. The multiple areas can have overlapping areas with each other.
[0071] The infrared ray transmissive plate 160 may be formed in a plate shape corresponding to the planar shape of the external upper side wall body 111. The infrared ray transmissive plate 160 may be formed of a transparent material such as quartz or glass. The infrared ray transmissive plate 160 may be horizontally coupled to the upper inner side of the external upper side wall body 111 along the lower part of the upper plate 115. The lower surface of the infrared ray transmissive plate 160 may be disposed opposite to the upper surface of the semiconductor substrate a above the semiconductor substrate a. The infrared ray transmissive plate 160 may divide the upper inner side of the external upper side wall body 111 into upper and lower spaces. That is, the infrared ray transmissive plate 160 may separately form a cooling gas injection space 100c above the upper part of the chamber upper space 100a. The cooling gas injection space 100c may be formed as a space into which the cooling gas injected from the cooling gas injection unit 400 flows and contacts the infrared ray transmissive plate 160.
[0072] The infrared ray transmissive plate 160 may release the radiant energy generated from the semiconductor substrate a during the epitaxial process to the outside. In particular, the infrared ray transmissive plate 160 may release the radiant energy including the infrared wavelength to the outside. Also, the infrared ray transmissive plate 160 may maintain a temperature of 400 °C or less, preferably, may maintain a temperature of 300 to 400 °C. Since the infrared ray transmissive plate 160 may maintain a temperature of 300 to 400 °C, it is possible to prevent the increase in emissivity caused by evaporation due to the process gas by preventing the evaporation caused by the process gas. Also, the infrared ray transmissive plate 160 does not increase the emissivity due to the increase in the number of epitaxial processes, and thus, the evaporation temperature difference between the plurality of semiconductor substrates a on which the processes are performed can be reduced. Among them, the process gas may be changed according to the type of heat treatment process. For example, gases such as SiH4, SiH2Cl2, SiHCl3, or SiCl4 may be used as the process gas in the epitaxial process. When the temperature of the cooling gas is 400 °C or less, chemical vapor deposition can be significantly reduced. Also, the infrared ray transmissive plate 160 does not increase the emissivity due to the increase in the number of heat treatment processes, and thus, the process temperature difference between the semiconductor substrates a on which the processes are performed can be reduced.
[0073] The substrate heating unit 200 may include a device arrangement plate 210 and a vertical cavity surface emitting laser module 220. As Figure 5 shown, in the substrate heating unit 200, a plurality of vertical cavity surface emitting laser modules 220 may be arranged along the x direction and the y direction and formed on the upper surface of the device arrangement plate 210.
[0074] The substrate heating unit 200 may be located below the laser beam transmissive plate 150 inside the inner cover 120 of the process chamber 100. The substrate heating unit 200 may irradiate a laser beam to the lower surface of the semiconductor substrate a through the laser beam transmissive plate 150.
[0075] The upper surface of the substrate heating unit 200 may be divided into a substrate heating region 200a, a heating edge region 200b, and a heating support region 200c. The substrate heating region 200a, the heating edge region 200b, and the heating support region 200c are regions set in a positional relationship corresponding to the semiconductor substrate a, the edge ring 130, and the substrate support 140 located above, respectively. Also, the substrate heating region 200a, the heating edge region 200b, and the heating support region 200c may be regions corresponding to the transmissive substrate region 150a, the transmissive edge region 150b, and the transmissive support region 150c, respectively. The substrate heating region 200a may be a region located below the semiconductor substrate a. Also, the heating edge region 200b may be a region located below the edge ring 130. Also, the heating support region 200c may be a region located below the substrate support 140. The plurality of regions may have regions overlapping with each other.
[0076] The device arrangement plate 210 may be formed in a plate shape having a certain area and thickness. Preferably, the device arrangement plate 210 may be formed to have an area corresponding to a specified width from the inner circumferential surfaces of the semiconductor substrate a, the edge ring 130, and the upper support 141 toward the outside. As described above, the upper surface of the device arrangement plate 210 may be divided into a substrate heating region 200a, a heating edge region 200b, and a heating support region 200c. The device arrangement plate 210 may be formed of a ceramic material or a metal material having thermal conductivity. The device arrangement plate 210 may be used to release heat generated from the vertical cavity surface emitting laser module 220.
[0077] The vertical cavity surface emitting laser module 220 may include a device substrate 221, a vertical cavity surface emitting laser device 223, electrode terminals 225, and a cooling block 227. A plurality of the vertical cavity surface emitting laser modules 220 can be arranged in a lattice shape on the upper surface of the device arrangement plate 210. The vertical cavity surface emitting laser module 220 may be arranged on the upper surface of the device arrangement plate 210 over the entire substrate heating region 200a, heating edge region 200b, and heating support region 200c. The vertical cavity surface emitting laser module 220 may be arranged such that a laser beam irradiates a region with a specified width from the inner circumferential surfaces of the semiconductor substrate a, the edge ring 130, and the upper support 141 toward the outside. The vertical cavity surface emitting laser module 220 may heat a part of the semiconductor substrate a, the edge ring 130, and the upper support 141 by the laser beam released from the vertical cavity surface emitting laser device 223.
[0078] In the vertical cavity surface emitting laser module 220, a plurality of vertical cavity surface emitting laser devices 223 are arranged along the x-axis direction and the y-axis direction to be formed on the upper surface of the device substrate 221. In the vertical cavity surface emitting laser module 220, when arranged along the y-axis direction, the terminal region 221b on the other side of the front end and the terminal region 221b on the rear end side of the vertical cavity surface emitting laser module 220 can be arranged adjacent to each other along the x-axis direction. The vertical cavity surface emitting laser module 220 can arrange the device region 221a and the terminal region 221b in a straight line along the x-axis direction, and alternately arrange the device region 221a and the terminal region 221b along the y-axis direction.
[0079] The device substrate 221 can be a general substrate for mounting electronic devices. The device substrate 221 can be divided into a device region 221a for mounting a plurality of vertical cavity surface emitting laser devices 223 and a terminal region 221b for mounting terminals. In the device region 221a, a plurality of vertical cavity surface emitting laser devices 223 can be arranged and mounted in a lattice shape. The terminal region 221b can be arranged adjacent to the device region 221a and can mount a plurality of terminals.
[0080] A plurality of the vertical cavity surface emitting laser devices 223 are arranged along the x-axis direction and the y-axis direction to be formed on the upper surface of the device substrate 221. The vertical cavity surface emitting laser device 223 can emit a laser beam with a single wavelength of 940 nm. The vertical cavity surface emitting laser device 223 can oscillate a high-output laser beam. Therefore, compared with the existing halogen lamp, the temperature rise rate of the semiconductor substrate a can be increased, and the lifespan is relatively long.
[0081] In the vertical cavity surface emitting laser device 223, a plurality of micro-emitters can be arranged along the x-axis direction and the y-axis direction to be formed. Although not specifically shown, the vertical cavity surface emitting laser device 223 can include a light-emitting frame (not shown) for fixing the micro-emitters and a power line (not shown) for supplying power to the micro-emitters. The vertical cavity surface emitting laser device 223 can be formed to apply the same current to the entire micro-emitters. And, the vertical cavity surface emitting laser device 223 can be formed to apply different powers to each micro-emitter.
[0082] A plurality of the electrode terminals 225 can be formed in the terminal region 221b of the device substrate 221. The electrode terminals 225 can include a + terminal and a - terminal, and can be electrically connected to the vertical cavity surface emitting laser device 223. Although not specifically shown, the electrode terminals 225 can be electrically connected to the vertical cavity surface emitting laser device 223 in various ways. The electrode terminals 225 can supply the current required for driving the vertical cavity surface emitting laser device 223.
[0083] The cooling block 227 can be formed in a planar shape corresponding to the planar shape of the device substrate 221 and a prescribed height. The cooling block 227 can be formed of a ceramic material or a metal material having thermal conductivity. The cooling block 227 can be bonded to the lower surface of the device substrate 221 through a separate adhesive layer. The cooling block 227 can release heat generated by the vertical cavity surface emitting laser device 223 mounted on the surface of the device substrate 221 downward. Accordingly, the cooling block 227 can cool the device substrate 221 and the vertical cavity surface emitting laser device 223. An unillustrated reference numeral 226 can be an adhesive layer that bonds the device substrate 221 and the cooling block 227.
[0084] Moreover, the cooling block 227 can form a cooling flow path (not illustrated) through which cooling water flows inside. The cooling flow path forms an inlet and an outlet on the lower surface and can be formed in various forms of flow paths inside the cooling block 227.
[0085] In another embodiment, in the substrate heating unit 200, the vertical cavity surface emitting laser module 220 can be formed in various shapes according to the shapes of the vertical cavity surface emitting laser device 223 and the electrode terminal 225 provided on the upper surface of the device substrate 221.
[0086] Referring to Figure 5 , the vertical cavity surface emitting laser module 220 according to another embodiment of the present invention can be formed in a square or rectangular shape as a whole. In the vertical cavity surface emitting laser module 220, a device region 221a can be formed in a quadrilateral shape having an overall width and a prescribed length, and a terminal region 221b can be integrally formed at the front end or the rear end of the device region 221a. Moreover, the length of the terminal region 221b can be less than the length of the device region 221a.
[0087] In the substrate heating unit 200, when the vertical cavity surface emitting laser modules 220 are arranged along the y-axis direction on the device arrangement plate 210, the terminal region 221b at the front end and the device region 221a of the sub-irradiation module 220 at the front side can be arranged in contact with each other.
[0088] In this case, the substrate heating unit 200 can continuously arrange the device regions 221a and the terminal regions 221b of the vertical cavity surface emitting laser modules 220 along the x-axis direction, and alternately arrange the device regions 221a and the terminal regions 221b along the y-axis direction.
[0089] Moreover, referring to Figure 6, the vertical cavity surface emitting laser module 220 of another embodiment of the present invention can be generally formed in a quadrilateral shape. And, in the vertical cavity surface emitting laser module 220, the terminal region 221b can be formed in a quadrilateral shape as a square shape having a predetermined length and a width corresponding to the overall width with cuts on the other side of the front end and one side of the rear end. That is, the width of the terminal region 221b can correspond to the width cut of the sub-device module. The terminal regions 221b can be located in the diagonal direction of each other on the square. In the vertical cavity surface emitting laser module 220, the region other than the terminal region 221b can be formed as the device region 221a.
[0090] And, one side and the other side of the vertical cavity surface emitting laser module 220 can be formed in a straight line shape. The length of the terminal region 221b can be less than the length of the device region 221a. The terminal regions 221b can be formed with the same length on the front side and the rear side.
[0091] When the vertical cavity surface emitting laser modules 220 are arranged along the y-axis direction on the device arrangement board 210, the terminal region 221b located at one end of the front side and the device region 221a located on one side of the rear end of the vertical cavity surface emitting laser module 220 can be adjacently arranged. When the vertical cavity surface emitting laser modules 220 are arranged along the y-axis direction, the terminal region 221b located on the other side of the rear end and the device region 221a existing on the other side of the front end of the vertical cavity surface emitting laser module 220 located on the front side can be adjacently arranged.
[0092] And, in the vertical cavity surface emitting laser module 220, based on the y-axis direction, the device regions 221a and the terminal regions 221b can be alternately arranged along the x-axis direction in the region where the terminal region 221b is formed, and the device regions 221a can be arranged in a straight line shape along the x-axis direction in the region where the terminal region 221b is not formed.
[0093] Therefore, the substrate heating unit 200 can include a region where the device regions 221a and the terminal regions 221b are alternately arranged along the x-axis direction and a region where only the device regions 221a are arranged, and the device regions 221a and the terminal regions 221b are alternately arranged along the y-axis direction.
[0094] The laser beam guiding part 300 may be in a linear shape and formed in a rod shape with a predetermined length and diameter. Also, the height of the laser beam guiding part 300 may be less than the height between the upper surface of the laser beam transmissive plate 150 and the lower surface of the edge ring 130. The central axis of the laser beam guiding part 300 may form a straight line and may be disposed along a direction inclined with respect to the horizontal plane. In this case, in the laser beam guiding part 300, the upper surface and the lower surface may form a horizontal plane, and the central axis forms an angle less than 90 degrees with the lower surface. In the laser beam guiding part 300, the lower surface may be located in the transmissive support area 150c of the laser beam transmissive plate 150, and the upper surface may be disposed adjacent to the lower surface of the edge ring 130 corresponding to the transmissive edge area 150b. Therefore, the laser beam guiding part 300 may determine the angle between the upper surface and the central axis according to the height and the horizontal position relationship between the transmissive support area 150c and the lower surface of the edge ring 130. The laser beam guiding part 300 may be formed of quartz material.
[0095] The laser beam guiding part 300 may be formed in a cylindrical shape with a circular horizontal cross-section. Also, the horizontal cross-section of the laser beam guiding part 300 may be formed in a polygonal shape such as a quadrilateral, pentagon, hexagon, or octagon. Also, the laser beam guiding part 300 may be formed in a shape with a hollow interior. Also, the laser beam guiding part 300 may be formed in a tubular shape with a hollow interior and open at the lower end and the upper end.
[0096] In the laser beam guiding part 300, the diameter or width of the upper surface may be equal to or less than the width of the edge ring 130. Herein, the width of the edge ring 130 may be a distance corresponding to the difference between the outer diameter and the inner diameter of the edge ring 130. The laser beam guiding part 300 may irradiate a laser beam from the upper surface to the lower surface of the edge ring 130, and thus, the diameter of the upper surface may correspond to the diameter of the lower surface of the edge ring 130. Also, in the laser beam guiding part 300, the area of the lower surface may be equal to or greater than the area of the upper surface. However, in the laser beam guiding part 300, the diameter or width of the lower surface may be less than the width of the heating support area 200c. Also, in the laser beam guiding part 300, the diameter or width of the upper surface and the diameter or width of the lower surface may be different.
[0097] The laser beam guiding unit 300 can irradiate the lower surface of the edge ring 130 with a laser beam that is irradiated and incident from the vertical cavity surface emitting laser module 220 located below. The laser beam guiding unit 300 internally reflects the laser beam incident through the lower surface and guides it to the upper surface, and can emit it to the lower surface of the edge ring 130 through the upper surface. Therefore, the laser beam guiding unit 300 focuses the laser beam of the vertical cavity surface emitting laser module 220 on the lower surface of the edge ring 130, thereby enabling additional heating of the edge ring 130. The edge ring 130 can be additionally heated by the laser beam, so that the heat of the semiconductor substrate a can be reduced from being released through the edge ring 130. Therefore, the heating temperature of the semiconductor substrate a can be the same or similar from the central region to the peripheral region.
[0098] In other embodiments, the laser beam guiding unit 300 can be formed in various shapes.
[0099] Referring to Figure 7 , the laser beam guiding unit 300 of another embodiment of the present invention can be in the shape of a rod, with a central axis forming a vertical straight line at the lower part and an inclined straight line at the upper part. In this case, the inclined straight line at the upper part can form an angle greater than 90 degrees with the vertical straight line. However, in this case, the lower surface of the laser beam guiding unit 300 can be located above the transmissive support region 150c, and the upper surface can be disposed adjacent to the lower surface of the edge ring 130. Therefore, the laser beam guiding unit 300 can irradiate the lower surface of the edge ring 130 with the laser beam incident through the lower surface.
[0100] And, referring to Figure 8 , the laser beam guiding unit 300 of another embodiment of the present invention can be in the shape of a rod, and the central axis can be formed with a vertical straight line at the lower part, an inclined straight line in the middle, and a vertical straight line at the upper part. However, in this case, the lower surface of the laser beam guiding unit 300 can be located above the transmissive support region 150c, and the upper surface can be disposed adjacent to the lower surface of the edge ring 130. Therefore, the laser beam guiding unit 300 can irradiate the lower surface of the edge ring 130 with the laser beam incident through the lower surface.
[0101] The cooling gas injection unit 400 can include an injection cover 410 and a gas injection plate 420. The cooling gas injection unit 400 can inject cooling gas onto the upper surface of the infrared transmissive plate 160 to cool the infrared transmissive plate 160. The cooling gas can be nitrogen (N2) gas, argon (Ar) gas, or compressed cooling air.
[0102] The injection outer cover 410 may include a cooling gas inlet hole 411. The injection outer cover 410 may be in a hollow state inside and have an open lower part in a cylindrical shape. The planar shape of the injection outer cover 410 may correspond to the upper plate 115 of the outer outer cover 110. The injection outer cover 410 may form a cooling gas inlet space 410a inside for the inflow of cooling gas.
[0103] The cooling gas inlet hole 411 may be formed as a hole shape that penetrates from the outside to the inside, that is, into the cooling gas inlet space 410a, in the upper plate or side plate of the injection outer cover 410. The cooling gas inlet hole 411 may be formed in one or more according to the planar area of the injection outer cover 410. The cooling gas inlet hole 411 may provide a path for the cooling gas to flow into the cooling gas inlet space 410a.
[0104] The gas injection plate 420 may include gas injection holes 421. The gas injection plate 420 may be formed in a plate shape, and its area may correspond to the planar area of the injection outer cover 410. The gas injection plate 420 may be coupled to the lower part of the injection outer cover 410 and cover the lower part of the injection outer cover 410.
[0105] The gas injection holes 421 penetrate from the upper surface to the lower surface of the gas injection plate 420. The gas injection holes 421 may connect the cooling gas inlet space 410a with the upper through hole 115a of the upper plate 115. The gas injection holes 421 may inject the cooling gas flowing into the cooling gas inlet space 410a from the outside upward into the inside of the upper through hole 115a and the upper surface of the infrared transmission plate 160.
[0106] A plurality of the gas injection holes 421 may be separated from each other as a whole on the gas injection plate 420. The gas injection holes 421 may inject the cooling gas uniformly onto the upper surface of the infrared transmission plate 160 as a whole. Therefore, the gas injection plate 420 may cool the lower infrared transmission plate 160 more uniformly.
[0107] The substrate rotating unit 500 may include an inner rotating unit 510 and an outer rotating unit 520. The substrate rotating unit 500 may rotate the substrate holder 140 horizontally in a non-contact manner. More specifically, the inner rotating unit 510 may be coupled to the lower part of the substrate holder 140 in the lower space 100b of the process chamber 100. And, the outer rotating unit 520 may be disposed opposite to the inner rotating unit 510 outside the process chamber. The outer rotating unit 520 may rotate the inner rotating unit 510 in a non-contact manner using magnetic force.
[0108] The inner rotation unit 510 may be formed in a structure such as a rotor of a motor. For example, the inner rotation unit 510 may be formed in an overall annular shape, and may be formed in a magnet structure in which N poles and S poles are alternately formed in the circumferential direction. The inner rotation unit 510 may be coupled to the side bracket 143 of the substrate bracket 140. In this case, the inner rotation unit 510 may be disposed upwardly spaced apart from the upper portion of the lower plate 117. On the other hand, although not specifically shown, the inner rotation unit 510 may be supported by a separate support unit to prevent vibration during rotation or to rotate smoothly. For example, the inner rotation unit 510 may be supported by a support bearing or a roller at the lower portion.
[0109] The outer rotation unit 520 may be formed in a structure such as a stator of a motor. For example, the outer rotation unit 520 may include an annular iron core and a wire wound around the iron core. The outer rotation unit 520 may rotate the inner rotation unit 510 by the magnetic force generated by the power supplied to the wire. The outer rotation unit 520 may be located outside the outer cover 110 so as to face the inner rotation unit 510 with respect to the outer cover 110. That is, the outer rotation unit 520 may be located outside the outer cover 110 at the same height as the inner rotation unit 510.
[0110] Next, the operation of the semiconductor manufacturing apparatus for an epitaxial process according to an embodiment of the present invention will be described. Hereinafter, the operation of the laser beam guiding unit constituting the semiconductor manufacturing apparatus for an epitaxial process will be mainly described.
[0111] Figure 9 For simulating Figure 1 the results of the guiding direction and irradiation density of the laser beam of the laser beam guiding unit. Figure 10 For simulating Figure 7 the results of the guiding direction and irradiation density of the laser beam of the laser beam guiding unit. Figure 11 For simulating Figure 8 the results of the guiding direction and irradiation density of the laser beam of the laser beam guiding unit. Figure 12 The results of the guiding direction and irradiation density of the laser beam in a state where there is no laser beam guiding unit are shown.
[0112] As Figure 9 shown, the laser beam guiding unit 300 may converge the laser beam irradiated from the vertical cavity surface emitting laser module 220 located below and guide it to the upper portion of the upper surface. The laser beam guiding unit 300 may guide the laser beam irradiated from the heating support region 200c to the lower surface of the edge ring 130 for irradiation.
[0113] After the laser beam is irradiated from the vertical cavity surface emitting laser module 220, it can enter the interior through the lower surface of the laser beam guide portion 300, and then, through internal reflection, it is guided upward from the side to the upper surface direction. Moreover, the laser beam is not irradiated to the outside through the side surface of the laser beam guide portion 300, but can be guided upward to the upper surface direction. The laser beam is focused and emitted through the upper surface, thereby irradiating the lower surface of the edge ring 130 and heating the edge ring 130.
[0114] The edge ring 130 can be heated by the laser beams irradiated from the vertical cavity surface emitting laser module 220 located in the heating edge region 200b and the vertical cavity surface emitting laser module 220 located in the heating support region 200c. That is, the edge ring 130 can be additionally heated by the laser beam irradiated from the vertical cavity surface emitting laser module 220 located in the heating support region 200c. Therefore, the edge ring 130 can be irradiated with a larger amount of laser beam than the semiconductor substrate a and the substrate support 140 to be heated. Thus, even if the heat of the edge ring 130 is released through the substrate support 140, the heat of the semiconductor substrate a will not be released through the edge ring 130. The heat outside the semiconductor substrate a will not be released through the edge ring 130. Therefore, the temperatures of the central region and the outer region can be uniform.
[0115] As Figure 10 and Figure 11 shown, for the laser beam guide portion 300, depending on the shape, there are some differences in the density and area of the laser beam guided to the lower surface of the edge ring 130, but the laser beam irradiated from the vertical cavity surface emitting laser module 220 located in the heating support region 200c can be additionally guided to the lower surface of the edge ring 130.
[0116] In contrast, as Figure 12 shown, in the case where there is no laser beam guide portion 300, the laser beam can be irradiated in a specified angular range on the upper surface of the vertical cavity surface emitting laser module 220. The laser beam irradiated from the vertical cavity surface emitting laser module 220 can be irradiated over the entire irradiation range and can be concentrated on the required area. The laser beam irradiated from the vertical cavity surface emitting laser module 220 located in the heating support region 200c will not be concentrated on the lower surface of the edge ring 130 and cannot effectively heat the edge ring 130 additionally.
[0117] The semiconductor manufacturing apparatus can uniformly heat the entire semiconductor substrate a. Therefore, although not specifically shown, it can be confirmed that in the semiconductor manufacturing apparatus 10 for the epitaxial process, the inner region and the outer region of the upper surface of the semiconductor substrate a can be uniformly vapor-deposited with a Si film. During the vapor deposition of the Si film, the inner region and the outer region of the semiconductor substrate a are uniformly heated, so it can be confirmed that the Si film is uniformly vapor-deposited. In contrast, in the conventional semiconductor manufacturing apparatus 10 for the epitaxial process, the outer region of the semiconductor substrate a is heated at a relatively low temperature, so the thickness of the Si film may become thinner compared to the inner region.
[0118] The embodiments disclosed in this specification are presented only as the most preferred embodiments selected from among multiple feasible embodiments to assist those of ordinary skill in the art to which the present invention pertains in understanding. The technical idea of the present invention is not limited to these embodiments, and various changes, additions, and modifications can be made without exceeding the scope of the present invention, and other equivalent embodiments can be implemented.
Claims
1. A semiconductor manufacturing apparatus for an epitaxial process, characterized in that: It includes: A process chamber, which has an edge ring, a substrate holder, and a laser beam transmissive plate. The edge ring supports the outer lower surface of the semiconductor substrate in such a way as to expose the lower surface of the semiconductor substrate. The substrate holder supports the outer lower surface of the edge ring. The laser beam transmissive plate is located below the semiconductor substrate; A substrate heating unit that irradiates the lower surfaces of the semiconductor substrate and the edge ring with a laser beam from a vertical cavity surface emitting laser module through the laser beam transmissive plate; and A laser beam guiding unit that irradiates the lower surface of the edge ring with the laser beam from the vertical cavity surface emitting laser module, The substrate heating unit is divided into a heating substrate region, a heating edge region, and a heating support region where the vertical cavity surface emitting laser module is located, The laser beam guiding unit guides and irradiates the lower surface of the edge ring with the laser beam irradiated from the vertical cavity surface emitting laser module located in the heating support region.
2. The semiconductor manufacturing apparatus for an epitaxial process according to claim 1, characterized in that: The edge ring extends along the outer side direction from the upper part of the inner circumferential surface, and the inner diameter is smaller than the outer diameter of the semiconductor substrate, The substrate holder includes an upper holder, and the upper holder has an edge ring support hole and an edge ring support step. The inner diameter of the edge ring support hole is smaller than the outer diameter of the edge ring, and the edge ring support step extends along the outer side direction from the upper part of the inner circumferential surface of the edge ring support hole, and the inner diameter is larger than the outer diameter of the edge ring.
3. The semiconductor manufacturing apparatus for an epitaxial process according to claim 1, wherein, Based on the horizontal plane, the emissivity per unit area of the edge ring is equal to or greater than the emissivity per unit area of the semiconductor substrate.
4. The semiconductor manufacturing apparatus for an epitaxial process according to claim 1, characterized in that: The laser beam transmissive plate has a transmissive substrate region, a transmissive edge region, and a transmissive support region corresponding to the heating substrate region, the heating edge region, and the heating support region, The lower surface of the laser beam guide rod is located above the transmissive support region, and the upper surface is located below the edge ring.
5. The semiconductor manufacturing apparatus for an epitaxial process according to claim 4, wherein The upper surface and the lower surface of the laser beam guide rod are horizontal planes, the central axis is a straight line, and the central axis forms an angle less than 90° with the lower surface.
6. The semiconductor manufacturing apparatus for an epitaxial process according to claim 4, wherein, The central axis of the laser beam guide rod forms a vertical straight line at the lower part and an inclined straight line at the upper part, and the vertical straight line and the inclined straight line form an angle greater than 90°.
7. The semiconductor manufacturing apparatus for an epitaxial process according to claim 4, wherein, The central axis of the laser beam guide rod forms a vertical straight line at the lower part, an inclined straight line in the middle, and a vertical straight line at the upper part.
8. The semiconductor manufacturing apparatus for an epitaxial process according to claim 1, wherein, The laser beam guide rod is made of quartz.