Crystal furnace temperature adjusting method and device

Abstract

The invention provides a temperature adjusting method and device of a crystal furnace, electronic equipment and a storage medium. The temperature adjusting method comprises the steps that whether the surface temperature of a material in a crucible of the crystal furnace is within a preset temperature range or not is determined; if the surface temperature is not within the preset temperature range, controlling the crystal furnace crucible to rotate at a first preset rotating speed, determining first target power of a crystal furnace heater based on a first temperature coefficient corresponding to the surface temperature, and controlling the crystal furnace heater to operate at the first target power; if the surface temperature is within the preset temperature range, controlling the crystal furnace crucible to rotate at a second preset rotating speed; and after the crystal furnace crucible is controlled to rotate at a second preset rotating speed, determining second target power of the crystal furnace heater based on a second temperature coefficient corresponding to the surface temperature, and controlling the crystal furnace heater to operate at the second target power. By adopting the technical scheme provided by the invention, the temperature adjusting time of the crystal furnace is shortened, the production efficiency and the quality of products are improved, and the production cost and the energy consumption are reduced.

Description

Technical Field

[0001] The present application relates to the technical field of crystal furnace temperature regulation, and in particular to a crystal furnace temperature regulation method, device, electronic equipment and storage medium. Background Art

[0002] As an important semiconductor material, monocrystalline silicon is widely used in numerous fields, including integrated circuits and solar cells. Temperature regulation during the manufacturing process directly impacts its quality and production efficiency. Temperature regulation ensures that the different manufacturing stages are maintained at appropriate temperatures. This optimal temperature ensures the normal growth of monocrystalline silicon, guaranteeing its quality and performance.

[0003] However, in actual production, the melt temperature rises slowly after the single crystal silicon ingot is cut. Furthermore, after the seed crystal is heated up and fully melted, the melt cools down slowly during the cooling process. Consequently, the temperature adjustment process in the current single crystal silicon manufacturing process is relatively long. Summary of the Invention

[0004] In view of this, the embodiments of the present application provide a temperature adjustment method, device, electronic device and storage medium for a crystal furnace, which shortens the temperature adjustment time of the crystal furnace, improves product production efficiency and product quality, and reduces production costs and energy consumption.

[0005] This application mainly includes the following aspects:

[0006] In a first aspect, an embodiment of the present application provides a temperature adjustment method for a crystallization furnace, the temperature adjustment method comprising:

[0007] Obtain the surface temperature of the material in the crystal furnace crucible;

[0008] determining whether the surface temperature is within a preset temperature range;

[0009] If the surface temperature is not within the preset temperature range, controlling the crystal furnace crucible to rotate at a first preset speed, determining a first target power of the crystal furnace heater based on a first temperature coefficient corresponding to the surface temperature, and controlling the crystal furnace heater to operate at the first target power so that the surface temperature is within the preset temperature range;

[0010] If the surface temperature is within the preset temperature range, the crystal furnace crucible is controlled to rotate at a second preset speed; after controlling the crystal furnace crucible to rotate at the second preset speed, the second target power of the crystal furnace heater is determined based on the second temperature coefficient corresponding to the surface temperature, and the crystal furnace heater is controlled to operate at the second target power so that the surface temperature reaches the target temperature.

[0011] Furthermore, the first temperature coefficient includes: a temperature rise coefficient and a temperature drop coefficient;

[0012] The determining a first target power of the crystal furnace heater based on a first temperature coefficient corresponding to the surface temperature includes:

[0013] determining a difference between the surface temperature and a preset desired temperature as a first temperature deviation;

[0014] If the surface temperature is lower than a lower limit of a preset temperature range, determining a second power of the crystal furnace heater based on the first temperature deviation and a temperature rise coefficient corresponding to the surface temperature, and determining the second power as a second target power of the crystal furnace heater;

[0015] If the surface temperature is greater than the upper limit of the preset temperature range, a third power of the crystal furnace heater is determined based on the first temperature deviation and the temperature reduction coefficient corresponding to the surface temperature, and the third power is determined as the second target power of the crystal furnace heater.

[0016] Furthermore, the second temperature coefficient includes: a first power adjustment coefficient and a second power adjustment coefficient;

[0017] The determining the second target power of the crystal furnace heater based on the second temperature coefficient corresponding to the surface temperature includes:

[0018] Determine whether the time interval between the last time raw materials were added to the crystal furnace and the current time is greater than a preset time;

[0019] If the time interval between the last time the raw material was fed into the crystal furnace and the current time is greater than a preset time, then when it is detected that the inner diameter of the seed crystal of the material is reduced and the surface temperature is greater than a preset temperature threshold, the crystal furnace crucible is controlled to rotate at a third preset speed, and the fourth power of the crystal furnace heater is determined based on the first power adjustment coefficient corresponding to the surface temperature and the first power limit coefficient corresponding to the weight of the material in the crystal furnace crucible, and the fourth power is determined as the second target power of the crystal furnace heater;

[0020] If the time interval between the last time the raw material was put into the crystal furnace and the current moment is not greater than the preset time, then when it is detected that the inner diameter of the seed crystal of the material is reduced and the surface temperature is greater than the preset temperature threshold, the crystal furnace crucible is controlled to rotate at a third preset speed, and the fifth power of the crystal furnace heater is determined based on the second power adjustment coefficient corresponding to the surface temperature and the weight of the material in the crystal furnace crucible, and the fifth power is determined as the second target power of the crystal furnace heater.

[0021] Furthermore, the determining of the fourth power of the crystal furnace heater based on the first power adjustment coefficient corresponding to the surface temperature and the first power limit coefficient corresponding to the weight of the material in the crystal furnace crucible includes:

[0022] Determine the second seeding power temperature corresponding to the weight of the material in the crucible of the crystal furnace;

[0023] determining a difference between the surface temperature and the second seeding power temperature as a second temperature deviation;

[0024] determining a sixth power of the crystal furnace heater based on a first power adjustment coefficient corresponding to the surface temperature and the second temperature deviation, and determining a seventh power of the crystal furnace heater based on a first power limit coefficient corresponding to a weight of material in the crystal furnace crucible and the second temperature deviation;

[0025] A maximum value between the sixth power and the seventh power is determined as a fourth power of the crystal furnace heater.

[0026] Furthermore, the determining of the fifth power of the crystal furnace heater based on the second power adjustment coefficient corresponding to the surface temperature and the weight of the material in the crystal furnace crucible includes:

[0027] Determine the third seeding power temperature corresponding to the weight of the material in the crucible of the crystal furnace;

[0028] determining a difference between the surface temperature and the third seeding power temperature as a third temperature deviation;

[0029] determining an eighth power of the crystal furnace heater based on a second power adjustment coefficient corresponding to the surface temperature and the third temperature deviation, and determining a ninth power of the crystal furnace heater based on a second power limit coefficient corresponding to the weight of the material in the crystal furnace crucible and the third temperature deviation;

[0030] A maximum value between the eighth power and the ninth power is determined as a fourth power of the crystal furnace heater.

[0031] In a second aspect, an embodiment of the present application further provides a temperature regulating device for a crystallization furnace, the temperature regulating device comprising:

[0032] An acquisition module is used to obtain the surface temperature of the material in the crucible of the crystal furnace;

[0033] a range determination module, determining whether the surface temperature is within a preset temperature range;

[0034] a first temperature regulating module, which controls the crystal furnace crucible to rotate at a first preset speed if the surface temperature is not within a preset temperature range, determines a first target power of the crystal furnace heater based on a first temperature coefficient corresponding to the surface temperature, and controls the crystal furnace heater to operate at the first target power so that the surface temperature is within the preset temperature range;

[0035] The second temperature regulating module controls the crystal furnace crucible to rotate at a second preset speed if the surface temperature is within a preset temperature range; after controlling the crystal furnace crucible to rotate at the second preset speed, the second target power of the crystal furnace heater is determined based on the second temperature coefficient corresponding to the surface temperature, and the crystal furnace heater is controlled to operate at the second target power so that the surface temperature reaches the target temperature.

[0036] Furthermore, the first temperature coefficient in the first temperature regulating module includes: a temperature rise coefficient and a temperature drop coefficient;

[0037] When the first temperature adjustment module is used to determine the first target power of the crystal furnace heater based on the first temperature coefficient corresponding to the surface temperature, the first temperature adjustment module is further specifically used to:

[0038] determining a difference between the surface temperature and a preset desired temperature as a first temperature deviation;

[0039] If the surface temperature is lower than a lower limit of a preset temperature range, determining a second power of the crystal furnace heater based on the first temperature deviation and a temperature rise coefficient corresponding to the surface temperature, and determining the second power as a second target power of the crystal furnace heater;

[0040] If the surface temperature is greater than the upper limit of the preset temperature range, a third power of the crystal furnace heater is determined based on the first temperature deviation and the temperature reduction coefficient corresponding to the surface temperature, and the third power is determined as the second target power of the crystal furnace heater.

[0041] Furthermore, the second temperature coefficient in the second temperature adjustment module includes: a first power adjustment coefficient and a second power adjustment coefficient;

[0042] When the second temperature adjustment module is used to determine the second target power of the crystal furnace heater based on the second temperature coefficient corresponding to the surface temperature, it is further specifically used to:

[0043] Determine whether the time interval between the last time raw materials were added to the crystal furnace and the current time is greater than a preset time;

[0044] If the time interval between the last time the raw material was fed into the crystal furnace and the current time is greater than a preset time, then when it is detected that the inner diameter of the seed crystal of the material is reduced and the surface temperature is greater than a preset temperature threshold, the crystal furnace crucible is controlled to rotate at a third preset speed, and the fourth power of the crystal furnace heater is determined based on the first power adjustment coefficient corresponding to the surface temperature and the first power limit coefficient corresponding to the weight of the material in the crystal furnace crucible, and the fourth power is determined as the second target power of the crystal furnace heater;

[0045] If the time interval between the last time the raw material was put into the crystal furnace and the current moment is not greater than the preset time, then when it is detected that the inner diameter of the seed crystal of the material is reduced and the surface temperature is greater than the preset temperature threshold, the crystal furnace crucible is controlled to rotate at a third preset speed, and the fifth power of the crystal furnace heater is determined based on the second power adjustment coefficient corresponding to the surface temperature and the weight of the material in the crystal furnace crucible, and the fifth power is determined as the second target power of the crystal furnace heater.

[0046] In the third aspect, an embodiment of the present application also provides an electronic device, comprising: a processor, a memory and a bus, wherein the memory stores machine-readable instructions executable by the processor, and when the electronic device is running, the processor and the memory communicate through the bus, and the machine-readable instructions are executed by the processor to execute the steps of the temperature regulation method of the crystal furnace described in the first aspect or any possible embodiment of the first aspect.

[0047] In a fourth aspect, an embodiment of the present application further provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the steps of the temperature adjustment method of the crystal furnace described in the first aspect or any possible embodiment of the first aspect are executed.

[0048] The embodiments of the present application provide a temperature regulation method, device, electronic device and storage medium for a crystal furnace, which obtain the surface temperature of the material in the crystal furnace crucible; determine whether the surface temperature is within a preset temperature range; if the surface temperature is not within the preset temperature range, control the crystal furnace crucible to rotate at a first preset speed, and determine the first target power of the crystal furnace heater based on the first temperature coefficient corresponding to the surface temperature, and control the crystal furnace heater to operate at the first target power so that the surface temperature is within the preset temperature range; if the surface temperature is within the preset temperature range, control the crystal furnace crucible to rotate at a second preset speed; after controlling the crystal furnace crucible to rotate at the second preset speed, determine the second target power of the crystal furnace heater based on the second temperature coefficient corresponding to the surface temperature, and control the crystal furnace heater to operate at the second target power so that the surface temperature reaches the target temperature.

[0049] In this way, the temperature adjustment time of the crystal furnace is shortened, the production efficiency and product quality of the product are improved, and the production cost and energy consumption are reduced.

[0050] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without creative work.

[0052] Figure 1 One of the flow charts of a temperature adjustment method for a crystal furnace provided in an embodiment of the present application is shown;

[0053] Figure 2 A schematic diagram of grayscale filtering adjustment provided in an embodiment of the present application is shown;

[0054] Figure 3 The second flowchart of the temperature adjustment method of a crystal furnace provided in an embodiment of the present application is shown;

[0055] Figure 4 The third flowchart of the temperature adjustment method of a crystal furnace provided in an embodiment of the present application is shown;

[0056] Figure 5 A fourth flow chart of a temperature adjustment method for a crystal furnace provided in an embodiment of the present application is shown;

[0057] Figure 6 Flowchart 5 of a method for adjusting the temperature of a crystal furnace provided in an embodiment of the present application is shown;

[0058] Figure 7 A schematic diagram of seeding filter adjustment provided in an embodiment of the present application is shown;

[0059] Figure 8 A schematic structural diagram of a temperature regulating device for a crystallization furnace provided in an embodiment of the present application is shown;

[0060] Figure 9 A schematic structural diagram of an electronic device provided in an embodiment of the present application is shown. DETAILED DESCRIPTION

[0061] In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. It should be understood that the drawings in the present application only serve the purpose of illustration and description and are not used to limit the scope of protection of the present application. In addition, it should be understood that the schematic drawings are not drawn to scale. The flowcharts used in this application illustrate the operations implemented according to some embodiments of the present application. It should be understood that the operations of the flowcharts can be implemented out of sequence, and steps without logical context can be reversed or implemented simultaneously. In addition, those skilled in the art, under the guidance of the contents of this application, can add one or more other operations to the flowchart, or remove one or more operations from the flowchart.

[0062] In addition, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application generally described and shown in the drawings here can be arranged and designed in various configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application.

[0063] The following methods, devices, electronic devices or computer-readable storage media of the embodiments of the present application can be applied to any scenario requiring temperature regulation of a crystal furnace. The embodiments of the present application are not limited to specific application scenarios. Any solution using the temperature regulation method and device of the crystal furnace provided by the embodiments of the present application is within the scope of protection of this application.

[0064] It is worth noting that monocrystalline silicon, as an important semiconductor material, is widely used in many fields such as integrated circuits and solar cells. In the production and manufacturing process of monocrystalline silicon, temperature regulation directly affects the quality and production efficiency of monocrystalline silicon. By adjusting the temperature, the different production and manufacturing stages are kept at appropriate temperature conditions. The appropriate temperature conditions can ensure the normal growth of monocrystalline silicon and ensure the quality and performance of monocrystalline silicon. However, in actual production, the melt temperature rises slowly after the single crystal silicon rod is cut. In addition, after the seed crystal is heated and melted through, the melt cools down slowly during the cooling operation. In summary, the temperature regulation process in the current monocrystalline silicon production and manufacturing process is relatively long.

[0065] In response to the above problems, the embodiments of the present application propose a temperature adjustment method, device, electronic equipment and storage medium for a crystal furnace, which shortens the temperature adjustment time of the crystal furnace, improves product production efficiency and product quality, and reduces production costs and energy consumption.

[0066] To facilitate understanding of the present application, the technical solutions provided in the present application are described in detail below in conjunction with specific embodiments.

[0067] See also Figure 1 , Figure 1 This is one of the flow charts of a temperature adjustment method for a crystal furnace provided in an embodiment of the present application.

[0068] In the embodiment of the present application, single crystal silicon is used as an example to illustrate the temperature control method of the present application. After the single crystal silicon rod is cut (seeded), the single crystal silicon needs to be re-welded. At this time, the melt temperature rises slowly, resulting in a longer time for re-adjusting the temperature after cutting. After the temperature is raised and the seed crystal is melted through, the melt temperature drops slowly, which lengthens the overall temperature adjustment time. Currently, in the production process of single crystal silicon, the temperature adjustment time takes about 80 minutes to 120 minutes.

[0069] like Figure 1 As shown in , the temperature adjustment method of the crystallization furnace provided in the embodiment of the present application includes the following steps:

[0070] Step S101, obtaining the surface temperature of the material in the crucible of the crystallization furnace.

[0071] Here, as an example, the material is a single crystal silicon melt in a crucible, and the surface temperature of the material is the liquid surface temperature of the single crystal silicon melt. The material can also be a melt of other materials. In the embodiment of the present application, the surface temperature of the material is determined by detecting the grayscale change on the surface of the material. Figure 2 As shown in , in order to speed up the grayscale reaction speed and prevent the slow reaction of the surface temperature of the material from causing an unexpected drop in the surface temperature of the material, this application reduces the number of grayscale mean filter points and the number of median filter points to speed up the grayscale reaction.

[0072] Step S102: determining whether the surface temperature is within a preset temperature range.

[0073] Here, the preset temperature range is the surface temperature range of the material during welding. As an example, the preset temperature range is [1458°C, 1462°C].

[0074] Before step S102 of "determining whether the surface temperature is within a preset temperature range", the temperature adjustment method further includes:

[0075] First, determine the first seeding power temperature corresponding to the weight of the material in the crystal furnace crucible. Here, regarding the first seeding power temperature corresponding to the material weight, specifically, the first step is to determine the preset weight range to which the weight of the material in the crystal furnace crucible belongs, and the second step is to determine the first seeding power temperature corresponding to the preset weight range. As an example, the preset weight range is [570kg, 600kg], and the seeding power temperature corresponding to [570kg, 600kg] is 1451°C.

[0076] Then, the first power of the crystal furnace heater is determined by multiplying the first crystal seeding power and the main power coefficient corresponding to the surface temperature, and the crystal furnace heater is controlled to operate at the first power. Here, it should be noted that before the surface temperature is controlled within the preset temperature range, the temperature needs to be controlled at a set low temperature, and the set low temperature is less than the lower limit of the preset temperature range. The main power coefficient is one of the parameters in the full melt detection table. By lowering the existing main power coefficient, the low temperature is controlled and the temperature reversal rate (i.e., the surface temperature rebound amplitude) is reduced. Among them, the full melt detection table is a preset process parameter file. The process full melt detection table also includes parameters such as solid-liquid ratio, bottom heater power setting, and heat shield position.

[0077] Step S103: If the surface temperature is not within the preset temperature range, the crystal furnace crucible is controlled to rotate at a first preset speed, and the first target power of the crystal furnace heater is determined based on the first temperature coefficient corresponding to the surface temperature, and the crystal furnace heater is controlled to operate at the first target power to make the surface temperature within the preset temperature range.

[0078] Here, as an example, the first preset speed is 4 rpm. The first temperature coefficient includes a temperature rise coefficient and a temperature drop coefficient. The temperature rise coefficient is used to increase the power of the crystal furnace heater, thereby increasing the surface temperature. The temperature drop coefficient is used to decrease the power of the crystal furnace heater, thereby decreasing the surface temperature.

[0079] The following combination Figure 3 The following describes how to determine the first target power of the crystal furnace heater based on the first temperature coefficient corresponding to the surface temperature, and control the crystal furnace heater to operate at the first target power.

[0080] See also Figure 3 , Figure 3 This is the second flow chart of a temperature regulation method for a crystal furnace provided in an embodiment of the present application.

[0081] like Figure 3 As shown in , regarding determining the first target power of the crystal furnace heater based on the first temperature coefficient corresponding to the surface temperature in step S103, and controlling the crystal furnace heater to operate at the first target power, in specific implementation, as an example, the following steps may be included:

[0082] Step S1031 : determining a difference between the surface temperature and a preset expected temperature as a first temperature deviation.

[0083] Here, the preset desired temperature is within a preset temperature range.

[0084] Step S1032: If the surface temperature is lower than the lower limit of the preset temperature range, a second power of the crystal furnace heater is determined based on the first temperature deviation and the temperature rise coefficient corresponding to the surface temperature, and the second power is determined as the second target power of the crystal furnace heater.

[0085] Here, as an example, the second power of the crystal furnace heater is calculated by: seeding power + first temperature deviation × temperature rise coefficient. Among them, the seeding power is a set fixed power. Regarding the temperature rise coefficient corresponding to the surface temperature, specifically, first determine the preset temperature range to which the surface temperature belongs, and then determine the temperature rise coefficient corresponding to the preset temperature range. As an example, the preset temperature range is [1452°C, 1455°C], and the temperature rise coefficient corresponding to [1452°C, 1455°C] is 7. The temperature rise coefficient is one of the parameters in the temperature control table. By adjusting the existing temperature rise coefficient, the surface temperature is quickly heated up. Among them, the temperature control table is a preset process parameter file. The temperature control table also includes parameters such as cooling coefficient and power adjustment (P value).

[0086] Step S1033: If the surface temperature is greater than the upper limit of the preset temperature range, a third power of the crystal furnace heater is determined based on the first temperature deviation and the temperature reduction coefficient corresponding to the surface temperature, and the third power is determined as the second target power of the crystal furnace heater.

[0087] Here, as an example, the third power of the crystal furnace heater is calculated by: seeding power + first temperature deviation × cooling coefficient. Regarding the cooling coefficient corresponding to the surface temperature, specifically, first determine the preset temperature range to which the surface temperature belongs, and then determine the cooling coefficient corresponding to the preset temperature range. As an example, the preset temperature range is [1452°C, 1455°C], and the cooling coefficient corresponding to [1452°C, 1455°C] is 4.

[0088] Through steps S1032 and S1033, the temperature is controlled within a preset temperature range.

[0089] See again Figure 1 , step S104, if the surface temperature is within the preset temperature range, the crystal furnace crucible is controlled to rotate at a second preset speed; after controlling the crystal furnace crucible to rotate at the second preset speed, the second target power of the crystal furnace heater is determined based on the second temperature coefficient corresponding to the surface temperature, and the crystal furnace heater is controlled to operate at the second target power so that the surface temperature reaches the target temperature.

[0090] Here, as an example, the second preset speed is 4 revolutions. The second temperature coefficient includes: a first power adjustment coefficient and a second power adjustment coefficient. As an example, the target temperature is 1451°C. Among them, the power limit coefficient is used to limit the power of the crystal furnace heater. The power adjustment coefficient is used to determine the size of the crystal furnace heater after welding (that is, when it is detected that the inner diameter of the seed crystal of the material is reduced and the surface temperature is greater than the preset temperature threshold).

[0091] The following combination Figure 4 How to determine the second target power of the crystal furnace heater based on the second temperature coefficient corresponding to the surface temperature is described below.

[0092] See also Figure 4 , Figure 4 This is the third flow chart of a temperature regulation method for a crystal furnace provided in an embodiment of the present application.

[0093] like Figure 4 As shown in , regarding determining the second target power of the crystal furnace heater based on the second temperature coefficient corresponding to the surface temperature in step S104, in specific implementation, as an example, the following steps may be included:

[0094] Step S1041 , determining whether the time interval between the last time raw materials were added to the crystal furnace and the current time is greater than a preset time.

[0095] Here, the preset time is 3 hours.

[0096] Step S1042: If the time interval between the last time the raw material was put into the crystal furnace and the current moment is greater than the preset time, then when it is detected that the inner diameter of the seed crystal of the material is reduced and the surface temperature is greater than the preset temperature threshold, the crystal furnace crucible is controlled to rotate at a third preset speed, and the fourth power of the crystal furnace heater is determined based on the first power adjustment coefficient corresponding to the surface temperature and the first power limiting coefficient corresponding to the weight of the material in the crystal furnace crucible, and the fourth power is determined as the second target power of the crystal furnace heater.

[0097] Here, if the time interval between the last time raw materials were added to the crystal furnace and the current moment is greater than the preset time, it means that no raw materials were added during the process from crystal cutting to re-melting, which may be due to the fact that the crystal cutting line was broken and no raw materials were added. As an example, the third preset speed is 6 revolutions. Regarding the first power adjustment coefficient corresponding to the surface temperature, specifically, first determine the preset temperature range to which the surface temperature belongs, and then determine the first power adjustment coefficient corresponding to the preset temperature range. As an example, the preset temperature range is [1452°C, 1455°C], and the first power adjustment coefficient corresponding to [1452°C, 1455°C] is 3.5.

[0098] The following combination Figure 5This is to illustrate how to determine the fourth power of the crystal furnace heater based on the first power adjustment coefficient corresponding to the surface temperature and the first power limit coefficient corresponding to the weight of the material in the crystal furnace crucible.

[0099] See also Figure 5 , Figure 5 This is the fourth flow chart of a temperature regulation method for a crystal furnace provided in an embodiment of the present application.

[0100] like Figure 5 As shown in , regarding determining the fourth power of the crystal furnace heater based on the first power adjustment coefficient corresponding to the surface temperature and the first power limit coefficient corresponding to the weight of the material in the crystal furnace crucible in step S1042, in a specific implementation, as an example, the following steps may be included:

[0101] Step S10421, determining a second seeding power temperature corresponding to the weight of the material in the crucible of the crystal furnace.

[0102] Regarding the first power limit coefficient corresponding to the material weight, specifically, first determine the preset weight range to which the material weight in the crucible belongs, and then determine the first power limit coefficient corresponding to the preset weight range. As an example, if the preset weight range is [570kg, 600kg], the first power limit coefficient corresponding to [570kg, 600kg] is 0.65.

[0103] Step S10422: determining the difference between the surface temperature and the second seeding power temperature as a second temperature deviation.

[0104] Step S10423, determining the sixth power of the crystal furnace heater based on the first power adjustment coefficient corresponding to the surface temperature and the second temperature deviation, and determining the seventh power of the crystal furnace heater based on the first power limitation coefficient corresponding to the material weight in the crystal furnace crucible and the second temperature deviation.

[0105] Here, as an example, the sixth power of the crystal furnace heater can be calculated by seeding power + second temperature deviation × first power adjustment coefficient. The seventh power of the crystal furnace heater can be calculated by seeding power + second temperature deviation × first power limit coefficient.

[0106] Step S10424: Determine the maximum value of the sixth power and the seventh power as the fourth power of the crystal furnace heater.

[0107] Here, if the calculated sixth power is lower than the seventh power (the lower limit power of the crystal furnace heater when the time interval between the last time raw materials were added to the crystal furnace and the current moment is greater than the preset time), the crystal furnace heater will operate at the seventh power.

[0108] See again Figure 4 , step S1043, if the time interval between the last time the raw material was put into the crystal furnace and the current moment is not greater than the preset time, then when it is detected that the inner diameter of the seed crystal of the material is reduced and the surface temperature is greater than the preset temperature threshold, the crystal furnace crucible is controlled to rotate at a third preset speed, and the fifth power of the crystal furnace heater is determined based on the second power adjustment coefficient corresponding to the surface temperature and the weight of the material in the crystal furnace crucible, and the fifth power is determined as the second target power of the crystal furnace heater.

[0109] Here, if the time interval between the last time the raw material was added to the crystal furnace and the current time is not greater than the preset time, it means that the raw material was added during the process from crystal cutting to remelting.

[0110] As an example, the fourth preset speed is 6 rpm. In this application, the fourth preset speed = the third preset speed > the second preset speed = the first preset speed. The purpose of setting the third and fourth preset speeds is to accelerate the temperature reaction and quickly cool down the temperature by using high crucible speed.

[0111] Regarding the first power adjustment coefficient corresponding to the surface temperature, specifically, first determine the preset temperature range to which the surface temperature belongs, and then determine the second power adjustment coefficient corresponding to the preset temperature range. As an example, the preset temperature range is [1452°C, 1455°C], and the second power adjustment coefficient corresponding to [1452°C, 1455°C] is 4. It should be noted that in the embodiment of the present application, in the same preset temperature range, there is a fixed difference between the first power adjustment coefficient and the second power adjustment coefficient. As an example, in the [1452°C, 1455°C] range, the first power adjustment coefficient is a fixed difference of 1 more than the second power adjustment coefficient.

[0112] The following combination Figure 6 This will illustrate how to determine the fifth power of the crystal furnace heater based on the second power adjustment coefficient corresponding to the surface temperature and the weight of the material in the crystal furnace crucible.

[0113] See also Figure 6 , Figure 6 This is the fifth flow chart of a temperature regulation method for a crystal furnace provided in an embodiment of the present application.

[0114] like Figure 6 As shown in , regarding determining the fifth power of the crystal furnace heater based on the second power adjustment coefficient corresponding to the surface temperature and the weight of the material in the crystal furnace crucible in step S1043, in a specific implementation, as an example, the following steps may be included:

[0115] Step S10431, determining the third seeding power temperature corresponding to the weight of the material in the crucible of the crystal furnace.

[0116] Here, regarding the second power limit coefficient corresponding to the material weight, specifically, first determine the preset weight interval to which the material weight in the crystal furnace crucible belongs, and then determine the second power limit coefficient corresponding to the preset weight interval. As an example, the preset weight interval is [570kg, 600kg], and the second power limit coefficient corresponding to [570kg, 600kg] is 0.6. It should be noted that in the embodiment of the present application, in the same preset weight interval, there is a fixed difference between the first power limit coefficient and the second limit adjustment coefficient. As an example, in the [570kg, 600kg] interval, the first power limit coefficient is a fixed difference of 0.05 more than the second power limit coefficient.

[0117] Step S10432: determining the difference between the surface temperature and the third seeding power temperature as a third temperature deviation.

[0118] Step S10433, determining the eighth power of the crystal furnace heater based on the second power adjustment coefficient corresponding to the surface temperature and the third temperature deviation, and determining the ninth power of the crystal furnace heater based on the second power limitation coefficient corresponding to the material weight in the crystal furnace crucible and the third temperature deviation.

[0119] Here, as an example, the sixth power of the crystal furnace heater can be calculated by seeding power + third temperature deviation × second power adjustment coefficient. The seventh power of the crystal furnace heater can be calculated by seeding power + third temperature deviation × second power limit coefficient.

[0120] Step S10434: determining the maximum value of the eighth power and the ninth power as the fourth power of the crystal furnace heater.

[0121] Here, if the calculated eighth power is lower than the ninth power (the lower limit power of the crystal furnace heater when the time interval between the last time raw materials were added to the crystal furnace and the current moment is not greater than the preset time), the crystal furnace heater will operate at the ninth power.

[0122] In the embodiment of the present application, after the surface temperature reaches the target temperature and continues until the crystal point reaches a certain ratio (saturation), the temperature adjustment is stopped and the seeding operation is performed. Figure 7 As shown in , in order to improve the seeding quality and reduce the breakage of cutting, this paper increases the number of seeding filter mean points and the opening, speeds up the seeding pulling speed, and reduces the cutting rate.

[0123] The first aspect of this application is to reduce the production cycle: through rapid temperature control, the temperature control time of the crystal furnace is greatly shortened. For example, the current temperature control requires 80-120 minutes, but after adopting the rapid temperature control method, the temperature control time can be shortened to less than 80 minutes, so that the overall cycle of single crystal growth is significantly shortened, thereby improving production efficiency; the second aspect is to reduce production costs: the optimized temperature control working hours can reduce the power consumption time of the heater and avoid unnecessary energy waste.

[0124] The embodiment of the present application provides a temperature regulation method for a crystal furnace. By means of the method, the temperature regulation time of the crystal furnace is shortened, the production efficiency and product quality of the product are improved, and the production cost and energy consumption are reduced.

[0125] Based on the same application concept, the embodiment of the present application also provides a temperature control device for the crystal furnace corresponding to the temperature control method for the crystal furnace provided in the above embodiment. Since the principle of solving the problem by the device in the embodiment of the present application is similar to the temperature control method for the crystal furnace in the above embodiment of the present application, the implementation of the device can refer to the implementation of the method, and the repeated parts will not be repeated.

[0126] Please refer to the figure, as shown Figure 8 A schematic structural diagram of a temperature regulating device for a crystal furnace provided in an embodiment of the present application.

[0127] like Figure 8 As shown in FIG, the temperature regulating device 810 of the crystallization furnace provided in the embodiment of the present application includes:

[0128] An acquisition module 811 acquires the surface temperature of the material in the crucible of the crystallization furnace;

[0129] A range determination module 812 determines whether the surface temperature is within a preset temperature range;

[0130] a first temperature regulating module 813, which controls the crystal furnace crucible to rotate at a first preset speed if the surface temperature is not within a preset temperature range, determines a first target power of the crystal furnace heater based on a first temperature coefficient corresponding to the surface temperature, and controls the crystal furnace heater to operate at the first target power so that the surface temperature is within the preset temperature range;

[0131] The second temperature regulating module 814 controls the crystal furnace crucible to rotate at a second preset speed if the surface temperature is within a preset temperature range; after controlling the crystal furnace crucible to rotate at the second preset speed, the second target power of the crystal furnace heater is determined based on the second temperature coefficient corresponding to the surface temperature, and the crystal furnace heater is controlled to operate at the second target power so that the surface temperature reaches the target temperature.

[0132] Furthermore, the first temperature coefficient in the first temperature adjustment module 813 includes: a temperature rise coefficient and a temperature drop coefficient;

[0133] When the first temperature adjustment module 813 is used to determine the first target power of the crystal furnace heater based on the first temperature coefficient corresponding to the surface temperature, it is further specifically used to:

[0134] determining a difference between the surface temperature and a preset desired temperature as a first temperature deviation;

[0135] If the surface temperature is lower than a lower limit of a preset temperature range, determining a second power of the crystal furnace heater based on the first temperature deviation and a temperature rise coefficient corresponding to the surface temperature, and determining the second power as a second target power of the crystal furnace heater;

[0136] If the surface temperature is greater than the upper limit of the preset temperature range, a third power of the crystal furnace heater is determined based on the first temperature deviation and the temperature reduction coefficient corresponding to the surface temperature, and the third power is determined as the second target power of the crystal furnace heater.

[0137] Furthermore, the second temperature coefficient in the second temperature adjustment module 814 includes: a first power adjustment coefficient;

[0138] When used to determine the second target power of the crystal furnace heater based on the second temperature coefficient corresponding to the surface temperature, the second temperature adjustment module 814 is further specifically configured to:

[0139] Determine whether the time interval between the last time raw materials were added to the crystal furnace and the current time is greater than a preset time;

[0140] If the time interval between the last time the raw material was fed into the crystal furnace and the current time is greater than a preset time, then when it is detected that the inner diameter of the seed crystal of the material is reduced and the surface temperature is greater than a preset temperature threshold, the crystal furnace crucible is controlled to rotate at a third preset speed, and the fourth power of the crystal furnace heater is determined based on the first power adjustment coefficient corresponding to the surface temperature and the first power limit coefficient corresponding to the weight of the material in the crystal furnace crucible, and the fourth power is determined as the second target power of the crystal furnace heater;

[0141] If the time interval between the last time the raw material was put into the crystal furnace and the current moment is not greater than the preset time, then when it is detected that the inner diameter of the seed crystal of the material is reduced and the surface temperature is greater than the preset temperature threshold, the crystal furnace crucible is controlled to rotate at a third preset speed, and the fifth power of the crystal furnace heater is determined based on the second power adjustment coefficient corresponding to the surface temperature and the weight of the material in the crystal furnace crucible, and the fifth power is determined as the second target power of the crystal furnace heater.

[0142] Furthermore, the second temperature adjustment module 814 is further specifically configured to:

[0143] Determine the second seeding power temperature corresponding to the weight of the material in the crucible of the crystal furnace;

[0144] determining a difference between the surface temperature and the second seeding power temperature as a second temperature deviation;

[0145] determining a sixth power of the crystal furnace heater based on a first power adjustment coefficient corresponding to the surface temperature and the second temperature deviation, and determining a seventh power of the crystal furnace heater based on a first power limit coefficient corresponding to a weight of material in the crystal furnace crucible and the second temperature deviation;

[0146] A maximum value between the sixth power and the seventh power is determined as a fourth power of the crystal furnace heater.

[0147] Furthermore, the second temperature adjustment module 814 is further specifically configured to:

[0148] Determine the third seeding power temperature corresponding to the weight of the material in the crucible of the crystal furnace;

[0149] determining a difference between the surface temperature and the third seeding power temperature as a third temperature deviation;

[0150] determining an eighth power of the crystal furnace heater based on a second power adjustment coefficient corresponding to the surface temperature and the third temperature deviation, and determining a ninth power of the crystal furnace heater based on a second power limit coefficient corresponding to the weight of the material in the crystal furnace crucible and the third temperature deviation;

[0151] A maximum value between the eighth power and the ninth power is determined as a fourth power of the crystal furnace heater.

[0152] The embodiment of the present application provides a temperature regulating device for a crystal furnace. By means of the device, the temperature regulating time of the crystal furnace is shortened, the production efficiency and product quality of the product are improved, and the production cost and energy consumption are reduced.

[0153] See also Figure 9 , Figure 9 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application.

[0154] like Figure 9 As shown in FIG, the electronic device 900 includes a processor 910 , a memory 920 and a bus 930 .

[0155] The memory 920 stores machine-readable instructions executable by the processor 910. When the electronic device 900 is running, the processor 910 communicates with the memory 920 via the bus 930. When the machine-readable instructions are executed by the processor 910, the above-mentioned Figure 1 、 Figure 3 、 Figure 4 、 Figure 5 and Figure 6 The steps of the temperature adjustment method of the crystal furnace in the method embodiment shown are specifically implemented in accordance with the method embodiment, and will not be described in detail here.

[0156] The embodiment of the present application also provides a computer-readable storage medium on which a computer program is stored. When the computer program is executed by a processor, the computer program can execute the above-mentioned Figure 1 、 Figure 3 、 Figure 4 、 Figure 5 and Figure 6 The steps of the temperature adjustment method of the crystal furnace in the method embodiment shown are specifically implemented in accordance with the method embodiment, and will not be described in detail here.

[0157] Those skilled in the art can clearly understand that, for the convenience and simplicity of description, the specific working process of the system and device described above can refer to the corresponding process in the aforementioned method embodiment, and will not be repeated here. In the several embodiments provided in this application, it should be understood that the disclosed system, device and method can be implemented in other ways. The device embodiments described above are merely schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some communication interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0158] The units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of these units may be selected to achieve the purpose of this embodiment according to actual needs.

[0159] In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.

[0160] If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a non-volatile computer-readable storage medium that is executable by a processor. Based on this understanding, the technical solution of the present application, or the part that contributes to the prior art, or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for enabling a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk, or an optical disk.

[0161] The above are only specific embodiments of the present application, but the scope of protection of this application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. A method for regulating the temperature of a crystallization furnace, characterized in that: The temperature regulation method comprises: Obtain the surface temperature of the material in the crystal furnace crucible; determining whether the surface temperature is within a preset temperature range; If the surface temperature is not within the preset temperature range, controlling the crystal furnace crucible to rotate at a first preset speed, determining a first target power of the crystal furnace heater based on a first temperature coefficient corresponding to the surface temperature, and controlling the crystal furnace heater to operate at the first target power so that the surface temperature is within the preset temperature range; If the surface temperature is within the preset temperature range, the crystal furnace crucible is controlled to rotate at a second preset speed; after controlling the crystal furnace crucible to rotate at the second preset speed, the second target power of the crystal furnace heater is determined based on the second temperature coefficient corresponding to the surface temperature, and the crystal furnace heater is controlled to operate at the second target power so that the surface temperature reaches the target temperature.

2. The temperature adjustment method of the crystal furnace according to claim 1, characterized in that: The first temperature coefficient includes: a temperature rise coefficient and a temperature drop coefficient; The determining a first target power of the crystal furnace heater based on a first temperature coefficient corresponding to the surface temperature includes: determining a difference between the surface temperature and a preset desired temperature as a first temperature deviation; If the surface temperature is lower than a lower limit of a preset temperature range, determining a second power of the crystal furnace heater based on the first temperature deviation and a temperature rise coefficient corresponding to the surface temperature, and determining the second power as a second target power of the crystal furnace heater; If the surface temperature is greater than the upper limit of the preset temperature range, a third power of the crystal furnace heater is determined based on the first temperature deviation and the temperature reduction coefficient corresponding to the surface temperature, and the third power is determined as the second target power of the crystal furnace heater.

3. The temperature adjustment method of the crystal furnace according to claim 1, characterized in that: The second temperature coefficient includes: a first power adjustment coefficient and a second power adjustment coefficient; The determining the second target power of the crystal furnace heater based on the second temperature coefficient corresponding to the surface temperature includes: Determine whether the time interval between the last time raw materials were added to the crystal furnace and the current time is greater than a preset time; If the time interval between the last time the raw material was fed into the crystal furnace and the current time is greater than a preset time, then when it is detected that the inner diameter of the seed crystal of the material is reduced and the surface temperature is greater than a preset temperature threshold, the crystal furnace crucible is controlled to rotate at a third preset speed, and the fourth power of the crystal furnace heater is determined based on the first power adjustment coefficient corresponding to the surface temperature and the first power limit coefficient corresponding to the weight of the material in the crystal furnace crucible, and the fourth power is determined as the second target power of the crystal furnace heater; If the time interval between the last time the raw material was put into the crystal furnace and the current moment is not greater than the preset time, then when it is detected that the inner diameter of the seed crystal of the material is reduced and the surface temperature is greater than the preset temperature threshold, the crystal furnace crucible is controlled to rotate at a third preset speed, and the fifth power of the crystal furnace heater is determined based on the second power adjustment coefficient corresponding to the surface temperature and the weight of the material in the crystal furnace crucible, and the fifth power is determined as the second target power of the crystal furnace heater.

4. The temperature adjustment method of the crystal furnace according to claim 3, characterized in that: The determining of the fourth power of the crystal furnace heater based on the first power adjustment coefficient corresponding to the surface temperature and the first power limit coefficient corresponding to the weight of the material in the crystal furnace crucible includes: Determine the second seeding power temperature corresponding to the weight of the material in the crucible of the crystal furnace; determining a difference between the surface temperature and the second seeding power temperature as a second temperature deviation; determining a sixth power of the crystal furnace heater based on a first power adjustment coefficient corresponding to the surface temperature and the second temperature deviation, and determining a seventh power of the crystal furnace heater based on a first power limit coefficient corresponding to a weight of material in the crystal furnace crucible and the second temperature deviation; A maximum value between the sixth power and the seventh power is determined as a fourth power of the crystal furnace heater.

5. The temperature adjustment method of the crystal furnace according to claim 3, characterized in that: The determining of the fifth power of the crystal furnace heater based on the second power adjustment coefficient corresponding to the surface temperature and the weight of the material in the crystal furnace crucible includes: Determine the third seeding power temperature corresponding to the weight of the material in the crucible of the crystal furnace; determining a difference between the surface temperature and the third seeding power temperature as a third temperature deviation; determining an eighth power of the crystal furnace heater based on a second power adjustment coefficient corresponding to the surface temperature and the third temperature deviation, and determining a ninth power of the crystal furnace heater based on a second power limit coefficient corresponding to the weight of the material in the crystal furnace crucible and the third temperature deviation; A maximum value between the eighth power and the ninth power is determined as a fourth power of the crystal furnace heater.

6. A temperature regulating device for a crystallization furnace, characterized in that: The temperature regulating device comprises: An acquisition module is used to obtain the surface temperature of the material in the crucible of the crystal furnace; a range determination module, determining whether the surface temperature is within a preset temperature range; a first temperature regulating module, which controls the crystal furnace crucible to rotate at a first preset speed if the surface temperature is not within a preset temperature range, determines a first target power of the crystal furnace heater based on a first temperature coefficient corresponding to the surface temperature, and controls the crystal furnace heater to operate at the first target power so that the surface temperature is within the preset temperature range; The second temperature regulating module controls the crystal furnace crucible to rotate at a second preset speed if the surface temperature is within a preset temperature range; after controlling the crystal furnace crucible to rotate at the second preset speed, the second target power of the crystal furnace heater is determined based on the second temperature coefficient corresponding to the surface temperature, and the crystal furnace heater is controlled to operate at the second target power so that the surface temperature reaches the target temperature.

7. The temperature regulating device of the crystal furnace according to claim 6, characterized in that: The first temperature coefficient in the first temperature regulating module includes: a temperature rise coefficient and a temperature drop coefficient; When the first temperature adjustment module is used to determine the first target power of the crystal furnace heater based on the first temperature coefficient corresponding to the surface temperature, the first temperature adjustment module is further specifically used to: determining a difference between the surface temperature and a preset desired temperature as a first temperature deviation; If the surface temperature is lower than a lower limit of a preset temperature range, determining a second power of the crystal furnace heater based on the first temperature deviation and a temperature rise coefficient corresponding to the surface temperature, and determining the second power as a second target power of the crystal furnace heater; If the surface temperature is greater than the upper limit of the preset temperature range, a third power of the crystal furnace heater is determined based on the first temperature deviation and the temperature reduction coefficient corresponding to the surface temperature, and the third power is determined as the second target power of the crystal furnace heater.

8. The temperature adjustment method of the crystal furnace according to claim 6, characterized in that: The second temperature coefficient in the second temperature adjustment module includes: a first power adjustment coefficient and a second power adjustment coefficient; When the second temperature adjustment module is used to determine the second target power of the crystal furnace heater based on the second temperature coefficient corresponding to the surface temperature, it is further specifically used to: Determine whether the time interval between the last time raw materials were added to the crystal furnace and the current time is greater than a preset time; If the time interval between the last time the raw material was fed into the crystal furnace and the current time is greater than a preset time, then when it is detected that the inner diameter of the seed crystal of the material is reduced and the surface temperature is greater than a preset temperature threshold, the crystal furnace crucible is controlled to rotate at a third preset speed, and the fourth power of the crystal furnace heater is determined based on the first power adjustment coefficient corresponding to the surface temperature and the first power limit coefficient corresponding to the weight of the material in the crystal furnace crucible, and the fourth power is determined as the second target power of the crystal furnace heater; If the time interval between the last time the raw material was put into the crystal furnace and the current moment is not greater than the preset time, then when it is detected that the inner diameter of the seed crystal of the material is reduced and the surface temperature is greater than the preset temperature threshold, the crystal furnace crucible is controlled to rotate at a third preset speed, and the fifth power of the crystal furnace heater is determined based on the second power adjustment coefficient corresponding to the surface temperature and the weight of the material in the crystal furnace crucible, and the fifth power is determined as the second target power of the crystal furnace heater.

9. An electronic device, characterized in that: include: A processor, a memory and a bus, wherein the memory stores machine-readable instructions executable by the processor. When the electronic device is running, the processor and the memory communicate through the bus. When the processor is running, the machine-readable instructions execute the steps of the temperature control method of the crystal furnace as described in any one of claims 1 to 5.

10. A computer-readable storage medium, characterized in that The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the temperature adjustment method of the crystal furnace according to any one of claims 1 to 5 are executed.

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