Chip temperature measurement and morphology synchronous in-situ monitoring system based on femtosecond laser

Abstract

The invention relates to a chip temperature measurement and morphology synchronous in-situ monitoring system based on femtosecond laser, and the method comprises the steps: employing a femtosecond laser, a time dispersion unit, a non-polarization beam splitter, a space dispersion assembly, a focusing unit, and a MHz-level and above high-speed free space photoelectric detector; the femtosecond laser pulse is subjected to time domain and space transformation by components such as a MHz-level and above high-speed digital oscilloscope and a computer, and the transient temperature and morphology change of the surface of the chip can be obtained by combining data processing methods such as Hilbert transformation. Therefore, the problem that MHz-level synchronous ultrafast temperature measurement and imaging of the chip cannot be realized in the prior art is solved.

Description

Technical Field

[0001] The present application relates to the technical fields of high-speed temperature measurement and imaging, and in particular to a synchronous in-situ monitoring system for temperature measurement and morphology of a chip based on femtosecond laser. Background Art

[0002] When a chip is operating normally, current flows through it, generating heat and causing changes in its temperature and topography. Under these steady-state conditions, it's relatively easy to measure both topography and temperature separately. However, in many cases, simultaneous measurements of both topography and temperature are necessary, as well as the study of transient changes caused by chip short circuits or other abnormal conditions.

[0003] Topography measurement typically requires high-resolution imaging technologies, such as scanning electron microscopes and atomic force microscopes. These technologies can provide detailed images of the chip surface and microstructure, but they also require fast imaging speeds to observe changes in chip topography during operation. However, these measurement devices, especially atomic force microscopes, have slow imaging speeds.

[0004] Temperature measurement aims to accurately capture the temperature distribution and changes within a chip during operation, requiring a fast-response temperature measurement method. Existing technologies utilize contact sensors such as thermocouples or thermistors for measurement, but this method can interfere with the normal operation of the chip and make it difficult to measure the internal temperature. Non-contact temperature measurement methods, such as infrared thermal imaging, can obtain surface temperature distribution without contacting the chip, but the measurement accuracy for tiny chips may be limited. Alternatively, the temperature can be indirectly inferred by establishing a thermal model of the chip and combining it with electrical parameter measurements. For example, the chip's temperature can be calculated using the heat conduction equation based on electrical parameters such as operating current and voltage, as well as the chip's thermal resistance and heat capacitance, such as thermal characteristics. This method requires a deep understanding of the chip's thermal characteristics and the development of an accurate model.

[0005] However, existing technologies cannot simultaneously obtain the morphology and temperature information of the chip, and can only measure a single physical quantity, and cannot achieve simultaneous and synchronous measurement of temperature and morphology. At present, although existing technologies can achieve synchronous detection of temperature and morphology, the temperature measurement and imaging speeds are slow, and dynamic monitoring of chip short circuits, power failures, etc. cannot be achieved, which urgently needs to be solved. Summary of the Invention

[0006] The present application provides a synchronous in-situ monitoring system for temperature measurement and morphology of a chip based on a femtosecond laser, so as to solve the problem that the existing technology cannot achieve MHz-level synchronous ultrafast temperature measurement and imaging of the chip.

[0007] The first embodiment of the present application provides a synchronous in-situ monitoring system for temperature measurement and morphology of a chip based on a femtosecond laser, comprising: a broadband femtosecond pulse laser for generating femtosecond pulses that meet preset power and wavelength requirements; a time dispersion unit for time-domain stretching of the femtosecond pulses; a non-polarizing beam splitter for dividing the time-domain stretched femtosecond pulses into reference pulses and detection pulses; a spatial dispersion component for spatially dispersing the detection pulses to obtain corresponding spatial pulses; a focusing unit for focusing the spatial pulses to focus the spatial pulses onto the chip to be tested and converge the reflected light from the chip to be tested. The device is configured to receive the reference pulse and spatially combine the pulses in combination with the spatial dispersion component to obtain a reflected pulse corresponding to the spatial pulse, and couple the reflected pulse into the optical fiber; a high-speed photodetector is configured to collect a pulse signal formed by coupling and interfering the reference pulse and the reflected pulse, and convert the pulse signal into a corresponding analog signal; a high-speed digital oscilloscope is configured to collect and sample the analog signal to obtain a corresponding sampling pulse; and a computer is configured to reconstruct the spatial temperature and image information of the chip to be tested based on the sampling pulse, a pre-stored functional relationship and a digital signal processing strategy.

[0008] Optionally, in one embodiment of the present application, it further includes: an optical fiber amplifier, which is arranged between the time dispersion unit and the non-polarization beam splitter to compensate for the power loss of the femtosecond pulse after time domain stretching.

[0009] Optionally, in one embodiment of the present application, it further includes: a first collimator, used to be arranged between the time dispersion unit and the non-polarization beam splitter to convert the time-domain stretched femtosecond pulse into corresponding free-space light; a second collimator, used to be arranged between the non-polarization beam splitter and the high-speed photodetector to convert the free-space light into corresponding light inside the optical fiber.

[0010] Optionally, in one embodiment of the present application, the spatial dispersion component includes: an acousto-optic deflector for adjusting the internal driving frequency and propagation direction of the detection pulse to obtain a corresponding deflected pulse; and a diffraction grating for dispersing the deflected pulse into a corresponding spatial pulse.

[0011] Optionally, in one embodiment of the present application, the focusing unit includes: a microscope objective lens, used to focus the spatial pulse on the chip to be tested to obtain a corresponding pulse spot; and a plano-convex lens, used to adjust the size of the pulse spot.

[0012] The second embodiment of the present application provides a method for synchronous in-situ monitoring of temperature and morphology of a chip based on a femtosecond laser, comprising the following steps: using a preset broadband femtosecond pulse laser to produce a femtosecond pulse that meets preset power and wavelength requirements, and performing time domain stretching and power loss compensation operations on the femtosecond pulse to obtain a corresponding compensated amplified laser signal; dividing the compensated amplified laser signal into a reference pulse and a detection pulse, and adjusting the optical path difference between the reference pulse and the detection pulse so that the reference pulse interferes with the detection pulse, and performing spatial dispersion on the detection pulse to obtain a corresponding spatial pulse; focusing the spatial pulse onto the object to be measured. On the chip, after the spatial pulse is reflected from the chip to be tested, it is spatially re-combined through a preset focusing unit and a spatial dispersion component to obtain a reflected pulse corresponding to the spatial pulse, and the reflected pulse is coupled into the optical fiber; a pulse signal formed by coupling and interfering the reference pulse and the reflected pulse is received by a preset high-speed photodetector and a high-speed digital oscilloscope, and the pulse signal is converted into a corresponding analog signal, and the analog signal is sampled to obtain a corresponding sampling pulse, and based on the sampling pulse, a pre-stored functional relationship and a digital signal processing strategy, the spatial temperature and image information of the chip to be tested are reconstructed.

[0013] Optionally, in one embodiment of the present application, the spatial temperature and image information of the chip to be tested is reconstructed based on the sampling pulse, the pre-stored functional relationship and the digital signal processing strategy, including: performing a low-frequency filtering operation on the sampling pulse to obtain a corresponding filtered signal, and performing a Hilbert transform on the high-frequency component in the filtered signal to generate a transformed component corresponding to the high-frequency component, and obtaining the real part information and imaginary part information of the high-frequency component; based on the preset power and wavelength requirements, determining the functional relationship between the reflectivity and temperature of the chip to be tested, and reconstructing the spatial temperature and image information of the chip to be tested according to the real part information, the imaginary part information, the sampling pulse and the functional relationship.

[0014] The third aspect of the present application provides an electronic device, comprising: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the program to implement the method for simultaneous in-situ monitoring of temperature and morphology of a chip based on femtosecond laser as described in the above embodiment.

[0015] A fourth aspect of the present application provides a computer-readable storage medium storing a computer program, which, when executed by a processor, implements the above-mentioned method for simultaneous in-situ monitoring of temperature and morphology of a chip based on femtosecond laser.

[0016] The fifth embodiment of the present application provides a computer program product, including a computer program, which is executed to implement the above-mentioned method for simultaneous in-situ monitoring of temperature and morphology of a chip based on femtosecond laser.

[0017] Therefore, the embodiments of the present application have the following beneficial effects:

[0018] The embodiments of the present application can perform time domain and space transformation on femtosecond laser pulses by utilizing components such as femtosecond lasers, time dispersion units, non-polarization beam splitters, spatial dispersion components, focusing units, MHz-level and above high-speed free-space photodetectors, MHz-level and above high-speed digital oscilloscopes and computers, and combine them with data processing methods such as Hilbert transform to obtain transient temperature and morphology changes on the chip surface. The present application can achieve synchronous temperature measurement and surface morphology monitoring through a MHz-level monitoring strategy for transient temperature and morphology changes of the chip, greatly improving the test sampling rate. Thus, it solves the problem that the existing technology cannot achieve MHz-level synchronous ultrafast temperature measurement and imaging of the chip.

[0019] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0021] Figure 1 This is an example diagram of a system for synchronous in-situ monitoring of chip temperature and morphology based on femtosecond laser according to an embodiment of the present application;

[0022] Figure 2 A schematic diagram of a structure of a system for ultrafast temperature measurement and ultrafast morphology simultaneous in-situ monitoring of a chip's one-dimensional line area based on a femtosecond laser, provided in one embodiment of the present application;

[0023] Figure 3 A schematic diagram of a structure of a system for ultrafast temperature measurement and ultrafast morphology simultaneous in-situ monitoring of a two-dimensional surface area of ​​a chip based on a femtosecond laser, provided in one embodiment of the present application;

[0024] Figure 4 A schematic diagram of the structure of a system for ultrafast temperature measurement and ultrafast morphology simultaneous in-situ monitoring of a designated chip point based on a femtosecond laser, provided in one embodiment of the present application;

[0025] Figure 5 This is a flow chart of a method for simultaneous in-situ monitoring of chip temperature and morphology based on femtosecond laser according to an embodiment of the present application;

[0026] Figure 6 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0027] The following describes in detail embodiments of the present application, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present application, and should not be construed as limiting the present application.

[0028] The following describes the synchronous in-situ monitoring system of temperature measurement and morphology of a chip based on a femtosecond laser according to an embodiment of the present application with reference to the accompanying drawings. In response to the problems mentioned in the above background technology, the present application provides a synchronous in-situ monitoring system of temperature measurement and morphology of a chip based on a femtosecond laser. In this system, by utilizing components such as a femtosecond laser, a time dispersion unit, a non-polarization beam splitter, a spatial dispersion component, a focusing unit, a MHz-level and above high-speed free-space photodetector, a MHz-level and above high-speed digital oscilloscope and a computer, etc., the femtosecond laser pulse is transformed in the time domain and space, and combined with data processing methods such as the Hilbert transform, the transient temperature and morphology changes of the chip surface can be obtained. The present application can achieve synchronous temperature measurement and surface morphology monitoring through a MHz-level monitoring strategy for transient temperature and morphology changes of the chip, greatly improving the test sampling rate. Thus, the problem that the existing technology cannot achieve MHz-level synchronous ultrafast temperature measurement and imaging of the chip is solved.

[0029] Specifically, Figure 1 It is a block diagram of a system for synchronous in-situ temperature measurement and morphology monitoring of a chip based on a femtosecond laser according to an embodiment of the present application.

[0030] like Figure 1 As shown, the synchronous in-situ monitoring system 10 for temperature measurement and morphology of a chip based on femtosecond laser includes: a broadband femtosecond pulse laser 100, a time dispersion unit 200, a non-polarization beam splitter 300, a spatial dispersion component 400, a focusing unit 500, a high-speed photodetector 600, a high-speed digital oscilloscope 700 and a computer 800.

[0031] The broadband femtosecond pulse laser 100 is used to generate femtosecond pulses that meet preset power and wavelength requirements.

[0032] The time dispersion unit 200 is used to perform time domain stretching on the femtosecond pulse.

[0033] The non-polarization beam splitter 300 is used to split the time-stretched femtosecond pulse into a reference pulse and a detection pulse.

[0034] The embodiment of the present application can first generate a femtosecond pulse of a first power and a first wavelength (i.e., meeting the preset power and wavelength requirements) through a broadband femtosecond pulse laser 100, and use a time dispersion unit 200 connected to the broadband femtosecond pulse laser 100 to perform time domain stretching on the femtosecond pulse; secondly, the embodiment of the present application can connect a non-polarization beam splitter 300 to the time dispersion unit 200 to separate the time domain stretched femtosecond pulse laser pulse into a reference pulse and a detection pulse through the non-polarization beam splitter 300.

[0035] Optionally, in one embodiment of the present application, the synchronous in-situ monitoring system 10 for temperature measurement and morphology of a chip based on femtosecond laser of the embodiment of the present application further includes: an optical fiber amplifier, which is arranged between the time dispersion unit and the non-polarization beam splitter to compensate for the power loss of the femtosecond pulse after time domain stretching.

[0036] It should be noted that, in the embodiment of the present application, an optical fiber amplifier may be provided between the time dispersion unit 200 and the non-polarization beam splitter 300 to compensate for the power loss of the laser pulse.

[0037] The spatial dispersion component 400 performs spatial dispersion on the detection pulse to obtain a corresponding spatial pulse.

[0038] Afterwards, the embodiment of the present application may connect the spatial dispersion component 400 to the non-polarization beam splitter 300 , so that the detection pulse is spatially dispersed after passing through the spatial dispersion component 400 to obtain a corresponding spatial pulse.

[0039] Optionally, in one embodiment of the present application, the spatial dispersion component 400 includes: an acousto-optic deflector and a diffraction grating.

[0040] Among them, the acousto-optic deflector is used to adjust the internal driving frequency and propagation direction of the detection pulse to obtain the corresponding deflection pulse.

[0041] A diffraction grating is used to disperse the deflected pulse into corresponding spatial pulses.

[0042] It should be noted that the spatial dispersion component 400 of the embodiment of the present application is mainly composed of an acousto-optic deflector and a diffraction grating.

[0043] During actual implementation, the diffraction grating in the spatial dispersion component 400 can disperse the detection pulse into a one-dimensional spatial pulse; alternatively, the spatial dispersion component 400 can adopt a combination of an acousto-optic deflector and a diffraction grating, so as to utilize the acousto-optic deflector to change the internal driving frequency of the detection pulse and change the propagation direction of the pulse to obtain a corresponding deflected pulse, thereby realizing subsequent two-dimensional scanning of the one-dimensional femtosecond laser on the observed object, and dispersing the deflected pulse into a one-dimensional spatial pulse through the diffraction grating.

[0044] The focusing unit 500 is used to focus the spatial pulses to focus the spatial pulses onto the chip to be tested, and to converge the pulses reflected from the chip to be tested, and to combine the pulses spatially in combination with the spatial dispersion component 400 to obtain the reflected pulses corresponding to the spatial pulses, and to couple the reflected pulses into the optical fiber.

[0045] During the actual implementation process, the embodiment of the present application can set a focusing unit 500 on the optical path of the pulse after spatial dispersion by the spatial dispersion component 400, and form a light spot on the sample to be tested (i.e., the chip to be tested) after focusing, and different wavelengths are focused at different positions, thereby realizing the mapping of wavelength and spatial position; after the pulse is reflected from the sample, it passes through the same focusing unit and spatial dispersion component to be spatially re-combined and coupled into the optical fiber.

[0046] Optionally, in one embodiment of the present application, the focusing unit 500 includes: a microscope objective lens and a plano-convex lens.

[0047] Among them, the microscope objective is used to focus the spatial pulse on the chip to be tested to obtain the corresponding pulse light spot.

[0048] Plano-convex lens, used to adjust the size of the pulse spot.

[0049] As a feasible method, the focusing unit 500 in the embodiment of the present application can be composed of two plano-convex lenses and a microscope objective lens to focus the pulse on the sample to obtain an imaging field of view, and the size of the imaging field of view can be adjusted by replacing the lenses.

[0050] The high-speed photodetector 600 is used to collect the pulse signal formed after the reference pulse and the reflected pulse are coupled and interfered, and convert the pulse signal into a corresponding analog signal.

[0051] Furthermore, the embodiments of the present application can utilize a MHz-level or higher high-speed free-space photodetector (i.e., a high-speed photodetector) 600 to collect the pulse signal formed by coupling and interfering the reference pulse and the reflected pulse, and convert it into an analog electrical signal.

[0052] Therefore, the embodiments of the present application use time domain stretching and spatial dispersion to stretch narrow pulses that cannot be directly detected in the time domain into wide pulses that can be detected by high-speed free-space photodetectors at the MHz level and above, and carry the spatial temperature information of the sample to be tested on the spectrum of the pulse to obtain the morphology and temperature information of each corresponding position on the sample at the same time.

[0053] Optionally, in one embodiment of the present application, the synchronous in-situ monitoring system 10 for temperature measurement and morphology of a chip based on femtosecond laser in the embodiment of the present application further includes: a first collimator and a second collimator.

[0054] The first collimator is used to be arranged between the time dispersion unit 200 and the non-polarization beam splitter 300 to convert the time-domain stretched femtosecond pulses into corresponding free-space light.

[0055] The second collimator is arranged between the non-polarization beam splitter 300 and the high-speed photodetector 600 to convert the free-space light into the corresponding light inside the optical fiber.

[0056] In an embodiment of the present application, a first collimator may be provided between the time dispersion unit 200 and the non-polarization beam splitter 300, and a second collimator may be provided between the non-polarization beam splitter 300 and a MHz-level or higher high-speed free-space photodetector 600, thereby realizing conversion between light inside the optical fiber and free-space light.

[0057] The high-speed digital oscilloscope 700 is used to collect and sample analog signals to obtain corresponding sampling pulses.

[0058] The computer 800 is used to reconstruct the spatial temperature and image information of the chip to be tested based on the sampling pulses, pre-stored functional relationships and digital signal processing strategies.

[0059] In addition, the embodiments of the present application may also be provided with a MHz-level or higher high-speed digital oscilloscope 700 connected to a MHz-level or higher high-speed free-space photodetector 600 to sample analog electrical signals, thereby obtaining corresponding sampling pulses, and inputting the sampling pulses into a computer 800 storing pre-acquired functional relationships and digital signal processing algorithms, thereby realizing reconstruction of the spatial temperature and image information of the sample to be measured.

[0060] The functional relationship is the functional relationship between the reflectivity and temperature of the chip to be tested at the first wavelength (ie, meeting the preset wavelength requirement).

[0061] As an achievable approach, after acquiring the sampling pulse, embodiments of the present application can filter out the low-frequency components of the sampling pulse, and have the computer 1100 perform a Hilbert transform on the high-frequency components to obtain the transformed component T and the real and imaginary parts of T. The spatial temperature and image information of the sample to be measured can be reconstructed using various algorithms and functional relationships based on the obtained real and imaginary parts of T and known information such as the sampling pulse, thereby obtaining the temperature and topography information of each corresponding position on the sample at the same time.

[0062] Therefore, in the embodiment of the present application, the collected sampling pulses are processed and transformed by the computer 800 and converted into the surface temperature and morphology information of the sample. The obtained temperature information and morphology information correspond to each other in time and space, thereby realizing synchronous detection of temperature and morphology.

[0063] It should be noted that the embodiments of the present application can achieve ultrafast temperature measurement and ultrafast topography simultaneous in-situ monitoring of a one-dimensional line area, a two-dimensional surface area, or a specified point of the observed object (i.e., the chip to be tested) by specifically selecting and moving some optical elements, as described below:

[0064] (1) The embodiment of the present application can use a diffraction grating as a spatial dispersion component, which disperses the pulse into a one-dimensional spatial pulse through the diffraction grating, thereby realizing ultrafast temperature measurement of a one-dimensional line area of ​​the observed object;

[0065] (2) Using a combination of an acousto-optic deflector and a diffraction grating as a spatial dispersion component, the acousto-optic deflector changes the internal driving frequency and the propagation direction of the spatial pulse, thereby achieving subsequent two-dimensional scanning of the one-dimensional femtosecond laser on the opaque object; the diffraction grating disperses the pulse into a one-dimensional spatial pulse, thereby achieving ultrafast temperature measurement and ultrafast morphology synchronous in-situ monitoring of the two-dimensional surface area of ​​the observed object;

[0066] (3) By moving the spatially dispersed components out of the optical path, ultrafast temperature measurement of a specified point on the observed object can be achieved.

[0067] The following describes the execution logic of the synchronous in-situ monitoring system for temperature measurement and morphology of a chip based on femtosecond laser through specific embodiments and in combination with the accompanying drawings.

[0068] Specifically, the first specific embodiment of the present application performs the following steps for ultrafast temperature measurement and simultaneous in-situ ultrafast topography monitoring of a chip's one-dimensional line region:

[0069] Step 1: The temperature of the test object (i.e., the chip to be tested) is controlled by a temperature control device. A broadband femtosecond pulse laser emits a monochromatic laser of a first wavelength (i.e., meeting a preset wavelength requirement). The function f(x) is used to calibrate the function based on the functional relationship between the reflectivity and temperature of the test object, and the function is stored in a computer.

[0070] Step 2: Fix the test object at a specific position of the measurement system;

[0071] Step 3: During calibration, the optical power meter is positioned between the microscope objective lens and the test object, and the femtosecond laser and the erbium-doped fiber amplifier are adjusted so that the generated femtosecond laser pulses still have the first power and the first wavelength after stretching and compensation, and the power thereof is sufficient to form an image by reflection inside the test object after beam splitting without damaging the test object, and the wavelength thereof is sufficient to form an image of sufficient quality after reflection from the surface of the test object; after the test begins, the optical power meter is removed from the optical path, and the pulse power and wavelength emitted and amplified by the femtosecond laser and the erbium-doped fiber amplifier are kept unchanged;

[0072] Step 4: Before testing, use a light shield to block the sample light path and adjust the optical path difference of the reference light path until a stable interference waveform is formed on the oscilloscope;

[0073] Step 5: Time-domain stretching of the femtosecond pulses is performed through a single-mode optical fiber. The time-domain stretched pulses are power-compensated by an erbium fiber amplifier and then incident on a beam splitter at a specific angle in the form of spatial light through a first collimator.

[0074] Step 6: The beam splitter separates the pulse into a reference pulse and a detection pulse by polarization. The reference pulse is detected by a MHz-class or higher high-speed free-space photodetector module after passing through a second collimator, and is sampled by a MHz-class or higher high-speed digital oscilloscope.

[0075] Step 7: The detection pulse is incident on the diffraction grating to achieve one-dimensional spatial dispersion. The spatially dispersed pulse is focused by the lens group and the microscope objective lens to form a linear spot on the sample to be measured. Different wavelengths are focused at different positions, thus achieving the mapping between wavelength and spatial position.

[0076] Step 8: After the pulse is reflected from the sample, it passes through the same microscope objective, plano-convex lens, and diffraction grating to be spatially re-combined, and is coupled into the optical fiber through a collimator. It is then detected by a MHz-class or higher high-speed free-space photodetector and sampled by a MHz-class or higher high-speed digital oscilloscope.

[0077] Step 9: Perform digital signal processing on the sampled data by a computer to reconstruct the temperature and image information of the sample to be tested in one dimension at the same time.

[0078] Therefore, the first specific embodiment of the present application stretches the narrow pulse that cannot be directly detected in the time domain into a wide pulse that can be detected by high-speed free-space photodetectors at the MHz level and above through time domain stretching, and uses a diffraction grating to disperse the spatial pulse to form a one-dimensional spatial pulse, thereby realizing a one-dimensional line scan of the observed object (opaque object) by a one-dimensional femtosecond laser, and carrying the spatial temperature information of the sample to be tested on the spectrum of the pulse to obtain the morphology and temperature information of each corresponding position on the sample at the same time, thereby realizing 100MHz-level high-speed synchronous detection of temperature and morphology information on the one-dimensional line area.

[0079] Specifically, Figure 2 The schematic diagram of the structure of the ultrafast temperature measurement and ultrafast morphology synchronous in-situ monitoring system for one-dimensional line area of ​​chip based on femtosecond laser. Figure 2As shown, the second specific embodiment of the present application analyzes and explains the one-dimensional line area ultrafast temperature measurement and ultrafast morphology synchronous in-situ monitoring system of the chip, which mainly includes: a femtosecond pulse laser 101, a single-mode optical fiber 102, an optical fiber amplifier 103, a first collimator 104, a beam splitter 105, a second collimator 106, a MHz-level and above high-speed free-space photodetector 107, a MHz-level and above high-speed digital oscilloscope 108, a computer 109, a diffraction grating 110, a first convex lens 111, a second convex lens 112, an objective lens 113, and a sample 114.

[0080] Among them, a femtosecond pulse laser 101 is connected to a single-mode optical fiber 102, an optical fiber amplifier 103 is connected to the single-mode optical fiber 102, a first collimator 104 is connected to the erbium-doped fiber amplifier 103, a beam splitter 105 is located in front of the first collimator 104, a second collimator 106 is located on the reference pulse side split by the beam splitter 105, a MHz-level or higher high-speed free-space photodetector 107 is connected to the second collimator 106, a high-speed digital oscilloscope 108 is connected to the MHz-level or higher high-speed free-space photodetector 107, a computer 109 is connected to the high-speed digital oscilloscope 108, a diffraction grating 110 is located in front of the beam splitter 105, a first convex lens 111 is located to the right of the diffraction grating 110, a second convex lens 112 is located to the right of the first plano-convex lens 111, a microscope objective 113 is located to the right of the second convex lens 112, and an observation sample 114 is located to the right of the microscope objective 113.

[0081] It should be noted that the system provided by the second specific embodiment of the present application can implement the steps in the first specific embodiment, and realize ultrafast temperature measurement and ultrafast morphology synchronous in-situ monitoring of the one-dimensional line area of ​​the sample to be tested (opaque object) under normal circumstances, and the sampling frequency can reach 100MHz and above.

[0082] Secondly, the third specific embodiment of the present application provides a method for simultaneous in-situ monitoring of ultrafast temperature measurement and ultrafast morphology of a two-dimensional surface area of ​​a chip based on a femtosecond laser. The difference between this method and the first specific embodiment is that step 7 of the first specific embodiment, "the detection pulse is incident on the diffraction grating to achieve one-dimensional spatial dispersion; the spatially dispersed pulse is focused through the lens group and the microscope objective lens to form a linear light spot on the sample to be measured, and different wavelengths are focused at different positions, thereby achieving the mapping of wavelength and spatial position" is adjusted to: "the detection pulse is incident on the acousto-optic deflector; the internal driving frequency is changed by the acousto-optic deflector, and the propagation direction of the spatial pulse is changed, thereby achieving subsequent large-area two-dimensional scanning of a one-dimensional femtosecond laser on a light-transmitting object; the spatial pulse is dispersed into a one-dimensional spatial pulse by the diffraction grating."

[0083] It can be understood that the third specific embodiment utilizes the femtosecond level characteristic of the femtosecond laser pulse wave, utilizes a diffraction grating to disperse the spatial pulse to form a one-dimensional spatial pulse, and uses an acousto-optic deflector to change the internal driving frequency and the propagation direction of the spatial pulse to achieve a large-area two-dimensional scanning of the one-dimensional femtosecond laser on the sample to be measured, and ultra-fast acquisition of information such as the reflectivity of the pulse when passing through the observed object. In conjunction with a pre-calibrated functional relationship and decoding algorithm, the 100MHz-level ultra-fast temperature and morphology of the two-dimensional surface area of ​​the observed object can be synchronously monitored in situ.

[0084] Afterwards, if Figure 3 As shown, the present application can illustrate and introduce the ultrafast temperature measurement and ultrafast morphology synchronous in-situ monitoring system of the two-dimensional surface area of ​​the chip based on femtosecond laser through the fourth specific embodiment.

[0085] The difference between the ultrafast temperature measurement and ultrafast morphology synchronous in-situ monitoring system of the two-dimensional surface area of ​​the chip and the second specific embodiment is that the system provided by the fourth specific embodiment also includes an acousto-optic deflector. The system provided by the fourth specific embodiment can perform ultrafast temperature measurement and ultrafast morphology detection on the two-dimensional surface area of ​​the chip based on femtosecond laser.

[0086] Specifically, if Figure 3 As shown, the femtosecond laser-based ultrafast temperature measurement and ultrafast morphology synchronous in-situ monitoring system for the two-dimensional surface area of ​​the chip includes: a femtosecond pulse laser 201, a single-mode optical fiber 202, an optical fiber amplifier 203, a first collimator 204, a beam splitter 205, a second collimator 206, a MHz-level and above high-speed free-space photodetector 207, a MHz-level and above high-speed digital oscilloscope 208, a computer 209, an acousto-optic deflector 210, a diffraction grating 211, a first convex lens 212, a second convex lens 213, an objective lens 214, and a sample 215.

[0087] Among them, a femtosecond pulse laser 201 is connected to a single-mode optical fiber 202, an optical fiber amplifier 203 is connected to the single-mode optical fiber 202, a first collimator 204 is connected to the erbium-doped optical fiber amplifier 203, a beam splitter 205 is located in front of the first collimator 204, a second collimator 206 is located on the reference pulse side split by the beam splitter 205, a MHz-level and above high-speed free-space photodetector 207 is connected to the second collimator 206, a high-speed digital oscilloscope 208 is connected to the MHz-level and above high-speed free-space photodetector 207, a computer 209 is connected to the high-speed digital oscilloscope 208, and an acousto-optic deflector is connected. 210 is located in front of the beam splitter 205, the diffraction grating 211 is located in front of the acousto-optic deflector 210, the first convex lens 212 is located to the right of the diffraction grating 211, the second convex lens 213 is located to the right of the first plano-convex lens 212, the microscope objective 214 is located to the right of the second convex lens 214, and the observation sample 215 is located to the right of the microscope objective 214; the internal driving frequency is changed and the propagation direction of the spatial pulse is changed by the acousto-optic deflector 210, thereby realizing the subsequent large-area two-dimensional scanning of the one-dimensional femtosecond laser on the sample to be measured; the spatial pulse is dispersed into a one-dimensional spatial pulse by the diffraction grating 211.

[0088] It should be noted that the system provided by the fourth specific embodiment can perform 100MHz-level ultrafast temperature measurement and ultrafast morphology synchronous in-situ monitoring of the two-dimensional surface area of ​​the observed object, and the system has a simple structure and is easy to operate.

[0089] It can be understood that the present application can be based on the one-dimensional line area ultrafast temperature measurement and ultrafast morphology synchronous in-situ monitoring system. An acousto-optic deflector is set before the diffraction grating to realize the ultrafast temperature measurement and ultrafast morphology synchronous in-situ monitoring functions of the chip in the two-dimensional surface area. The acquisition frequency of the two-dimensional temperature distribution mainly depends on the actual frequency of the acousto-optic deflector and the one-dimensional temperature measurement system, and can usually reach a MHz sampling rate. The ultrafast temperature measurement and ultrafast morphology synchronous in-situ monitoring examples of the two-dimensional surface area can not only ultra-fast obtain the transient changes of temperature and morphology over time, but its two-dimensional scanning function can also obtain the specific temperature distribution and morphology information of different areas under a certain transient state.

[0090] Afterwards, the embodiments of the present application can illustrate the ultrafast temperature measurement and ultrafast morphology synchronous in-situ monitoring system of the specified point of the chip based on femtosecond laser through the fifth specific embodiment. The difference between the fifth specific embodiment and the first specific embodiment is that the fifth specific embodiment directly inputs the detection pulse into the first plano-convex lens through a collimator, that is, the fifth specific embodiment removes the spatial dispersion component and does not involve the step of dispersing the spatial pulse into a one-dimensional spatial pulse through a diffraction grating.

[0091] It can be understood that the fifth specific embodiment utilizes the femtosecond-level characteristics of femtosecond laser pulse waves to ultrafast acquire information such as the reflectivity of the pulse when it passes through the observed object. Combined with the pre-calibrated functional relationship and decoding algorithm, the observed object can be subjected to 100MHz-level ultrafast temperature and morphology synchronous in-situ monitoring at a specified point.

[0092] Specifically, Figure 4 The schematic diagram of the structure of the ultrafast temperature measurement and ultrafast morphology synchronous in-situ monitoring system based on femtosecond laser for a specified point on the chip. Figure 4 As shown, the sixth specific embodiment of the present application is a system for ultrafast temperature measurement and ultrafast morphology synchronous in-situ monitoring of specified points on a chip based on a femtosecond laser. The difference from the system provided by the second specific embodiment is that the system provided by the sixth specific embodiment removes the diffraction grating, and the system provided by the sixth specific embodiment can perform ultrafast temperature measurement and ultrafast morphology synchronous in-situ monitoring of specified points on a chip based on a femtosecond laser.

[0093] Specifically, such as Figure 4 As shown, the ultrafast temperature measurement and ultrafast morphology synchronous in-situ monitoring system for a designated point on a chip based on a femtosecond laser comprises: a femtosecond pulse laser 301, a single-mode optical fiber 302, an optical fiber amplifier 303, a first collimator 304, a beam splitter 305, a second collimator 306, a MHz-level or higher high-speed free-space photodetector 307, a MHz-level or higher high-speed digital oscilloscope 308, a computer 309, a first convex lens 310, a second convex lens 311, an objective lens 312, and a sample 313.

[0094] In particular, a femtosecond pulse laser 301 is connected to a single-mode optical fiber 302, an optical fiber amplifier 303 is connected to the single-mode optical fiber 302, a first collimator 304 is connected to the erbium-doped optical fiber amplifier 303, a beam splitter 305 is located in front of the first collimator 304, a second collimator 306 is located on the reference pulse side of the beam splitter 305, a MHz-level or higher high-speed free-space photodetector 307 is connected to the second collimator 306, a high-speed digital oscilloscope 308 is connected to the MHz-level or higher high-speed free-space photodetector 307, a computer 309 is connected to the high-speed digital oscilloscope 308, a first convex lens 310 is located in front of the beam splitter 305, a second convex lens 311 is located in front of the first plano-convex lens 310, a microscope objective 312 is located in front of the second convex lens 311, and an observation sample 313 is located in front of the microscope objective 312. The detection pulse is incident on the first plano-convex lens 310 through the beam splitter 305.

[0095] It should be noted that the system provided by the sixth specific embodiment of the present application simplifies the device by eliminating spatially dispersed components, and can achieve ultra-fast temperature measurement and ultra-fast morphology synchronous in-situ monitoring of specified points on the chip. The system has a simple structure and is easy to operate.

[0096] According to the embodiment of the present application, the system for synchronous in-situ temperature measurement and morphology monitoring of a chip based on a femtosecond laser is proposed. By using components such as a femtosecond laser, a time dispersion unit, a non-polarizing beam splitter, a focusing unit, a MHz-level or higher high-speed free-space photodetector, a MHz-level or higher high-speed digital oscilloscope, and a computer to perform time-domain and spatial transformations on the femtosecond laser pulses, combined with data processing methods such as the Hilbert transform, the transient temperature and morphology changes on the chip surface can be obtained. This application uses a MHz-level monitoring strategy for transient temperature and morphology changes of the chip to achieve synchronous temperature measurement and surface morphology monitoring, greatly improving the test sampling rate.

[0097] Next, a method for simultaneous in-situ temperature measurement and morphology monitoring of a chip based on a femtosecond laser according to an embodiment of the present application will be described with reference to the accompanying drawings.

[0098] Figure 5 This is a flow chart of a method for simultaneous in-situ monitoring of chip temperature and morphology based on femtosecond laser provided in an embodiment of the present application.

[0099] like Figure 5 As shown, the method for simultaneous in-situ monitoring of chip temperature and morphology based on femtosecond laser includes the following steps:

[0100] In step S501, a preset broadband femtosecond pulse laser is used to generate femtosecond pulses that meet preset power and wavelength requirements, and time domain stretching and power loss compensation operations are performed on the femtosecond pulses to obtain corresponding compensated amplified laser signals.

[0101] In step S502, the compensated amplified laser signal is divided into a reference pulse and a detection pulse, and the optical path difference between the reference pulse and the detection pulse is adjusted so that the reference pulse and the detection pulse form interference, and the detection pulse is spatially dispersed to obtain a corresponding spatial pulse.

[0102] In step S503, the spatial pulse is focused onto the chip to be tested, and after the spatial pulse is reflected from the chip to be tested, it is spatially recombined through a preset focusing unit and spatial dispersion component to obtain a reflected pulse corresponding to the spatial pulse, and the reflected pulse is coupled into the optical fiber.

[0103] In step S504, a pulse signal formed by coupling and interfering the reference pulse and the reflected pulse is received by a preset high-speed photodetector and a high-speed digital oscilloscope, and the pulse signal is converted into a corresponding analog signal. The analog signal is sampled to obtain a corresponding sampling pulse, and based on the sampling pulse, the pre-stored functional relationship and the digital signal processing strategy, the spatial temperature and image information of the chip to be tested are reconstructed.

[0104] Specifically, the embodiment of the present application can obtain the functional relationship between reflectivity and temperature, and store it in a computer, and generate a femtosecond pulse of a first power and a first wavelength (i.e., meeting the preset power and wavelength requirements) through a broadband femtosecond pulse laser, and the pulse is first stretched in the time domain through a time dispersion unit; secondly, the embodiment of the present application can compensate for power loss through an optical fiber amplifier, and then be divided into a reference pulse and a detection pulse through a collimator and a non-polarizing beam splitter, and the optical path difference between the two beams of light is adjusted to form interference; the reference pulse is detected through a MHz-level and above high-speed free-space photodetector module, and sampled by a MHz-level and above high-speed digital oscilloscope, and the detection pulse is incident on a spatial dispersion component, thereby realizing spatial dispersion.

[0105] Afterwards, the spatially dispersed pulses are focused by a focusing unit, where different wavelengths are focused at different locations, thus achieving a mapping of wavelength and spatial position. After reflecting from the sample, the pulses are spatially recombined through the same focusing unit and spatial dispersion components. They are then coupled into an optical fiber via a collimator, detected by a high-speed free-space photodetector at or above the MHz level, and sampled by a high-speed digital oscilloscope at or above the MHz level. The sampling pulse is then derived from the reference pulse and the detection pulse. Furthermore, the high-speed, continuous detection and sampling characteristics of the photodetector and digitizer enable system sampling rates to reach 100 MHz or higher.

[0106] As a feasible method, the embodiment of the present application can process and transform the collected data through a computer and convert it into the surface temperature and morphology information of the sample; before the conversion, the functional relationship between temperature and reflectivity needs to be tested. The functional relationship is obtained by emitting a monochromatic laser of the first wavelength through a femtosecond laser, and then the functional relationship between the reflectivity and temperature of the observed object is obtained, and it is calibrated with the function f(x) and stored in the computer in advance.

[0107] Optionally, in one embodiment of the present application, the spatial temperature and image information of the chip to be tested are reconstructed based on the sampling pulse, a pre-stored functional relationship and a digital signal processing strategy, including: performing a low-frequency filtering operation on the sampling pulse to obtain a corresponding filtered signal, and performing a Hilbert transform on the high-frequency component in the filtered signal to generate a transformed component corresponding to the high-frequency component, and obtaining the real part information and imaginary part information of the high-frequency component; based on the preset power and wavelength requirements, determining the functional relationship between the reflectivity and temperature of the chip to be tested, and reconstructing the spatial temperature and image information of the chip to be tested according to the real part information, imaginary part information, sampling pulse and functional relationship.

[0108] It should be noted that, in the embodiments of the present application, after filtering out the low-frequency components of the sampling pulse, a computer performs a Hilbert transform on the high-frequency components to obtain the transformed component T and the real and imaginary parts of T. The spatial temperature and image information of the sample to be measured can then be reconstructed using various algorithms and functional relationships based on the obtained real and imaginary parts of T and known information such as the sampling pulse, thereby obtaining the temperature and topography information of each corresponding position on the sample at the same time. As a result, the obtained temperature information and topography information correspond to each other in both time and space, thereby achieving synchronous detection of temperature and topography.

[0109] Therefore, the embodiment of the present application can decode the laser pulse information on the sample chip measured by the ultrafast temperature measurement and ultrafast morphology synchronous in-situ monitoring system into temperature and morphology transient measurement data, thereby obtaining the multi-dimensional synchronous information and dynamic evolution process of the chip temperature-morphology-electrical signal during the working process.

[0110] It should be noted that the above explanation of the embodiment of the system for simultaneous in-situ monitoring of chip temperature and morphology based on femtosecond laser is also applicable to the method for simultaneous in-situ monitoring of chip temperature and morphology based on femtosecond laser in this embodiment, and will not be repeated here.

[0111] According to the synchronous in-situ monitoring method for temperature measurement and morphology of a chip based on a femtosecond laser proposed in an embodiment of the present application, a preset broadband femtosecond pulse laser is used to produce femtosecond pulses that meet preset power and wavelength requirements, and the femtosecond pulses are subjected to time domain stretching and power loss compensation operations to obtain a corresponding compensated amplified laser signal; the compensated amplified laser signal is divided into a reference pulse and a detection pulse, and the optical path difference between the reference pulse and the detection pulse is adjusted so that the reference pulse and the detection pulse interfere with each other, and the detection pulse is spatially dispersed to obtain a corresponding spatial pulse; the spatial pulse is focused onto the chip to be measured, and after the spatial pulse is reflected from the chip to be measured, it is spatially recombined through a preset focusing unit and a spatial dispersion component to obtain a reflected pulse corresponding to the spatial pulse, and the reflected pulse is coupled into an optical fiber; a pulse signal formed by coupling and interfering the reference pulse and the reflected pulse is received by a preset high-speed photodetector and a high-speed digital oscilloscope, and the pulse signal is converted into a corresponding analog signal, and the analog signal is sampled to obtain a corresponding sampling pulse, and based on the sampling pulse, a pre-stored functional relationship and a digital signal processing strategy, the spatial temperature and image information of the chip to be measured are reconstructed. This application uses a MHz-level monitoring strategy for chip transient temperature and morphology changes to achieve simultaneous temperature measurement and surface morphology monitoring, greatly improving the test sampling rate.

[0112] Figure 6 This is a schematic diagram of the structure of an electronic device provided in an embodiment of the present application. The electronic device may include:

[0113] A memory 601 , a processor 602 , and a computer program stored in the memory 601 and executable on the processor 602 .

[0114] When the processor 602 executes the program, the method for simultaneous in-situ temperature measurement and morphology monitoring of a chip based on femtosecond laser provided in the above embodiment is implemented.

[0115] Furthermore, the electronic device further includes:

[0116] The communication interface 603 is used for communication between the memory 601 and the processor 602 .

[0117] The memory 601 is used to store computer programs that can be run on the processor 602 .

[0118] The memory 601 may include a high-speed RAM memory, and may also include a non-volatile memory (non-volatile memory), such as at least one disk memory.

[0119] If the memory 601, processor 602, and communication interface 603 are implemented independently, the communication interface 603, memory 601, and processor 602 can be connected to each other via a bus and communicate with each other. The bus can be an Industry Standard Architecture (ISA) bus, a Peripheral Component Interconnect (PCI) bus, or an Extended Industry Standard Architecture (EISA) bus. The bus can be divided into an address bus, a data bus, a control bus, etc. For ease of representation, Figure 6 Only one thick line is used in the diagram, but this does not mean that there is only one bus or one type of bus.

[0120] Optionally, in a specific implementation, if the memory 601, the processor 602 and the communication interface 603 are integrated on a chip, the memory 601, the processor 602 and the communication interface 603 can communicate with each other through an internal interface.

[0121] The processor 602 may be a central processing unit (CPU), an application specific integrated circuit (ASIC), or one or more integrated circuits configured to implement the embodiments of the present application.

[0122] An embodiment of the present application also provides a computer-readable storage medium having a computer program stored thereon. When the program is executed by a processor, the above-mentioned method for synchronous in-situ monitoring of temperature and morphology of a chip based on femtosecond laser is implemented.

[0123] An embodiment of the present application further provides a computer program product, including a computer program, which, when executed, is used to implement the above-mentioned method for simultaneous in-situ monitoring of temperature and morphology of a chip based on femtosecond laser.

[0124] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or N embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and features of different embodiments or examples without contradiction.

[0125] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of technical features indicated. Thus, a feature specified as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of this application, "N" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0126] Any process or method description in a flowchart or otherwise described herein may be understood to represent a module, fragment or portion of code comprising one or N executable instructions for implementing a custom logical function or process step, and the scope of the preferred embodiments of the present application includes alternative implementations in which functions may be performed in a different order than shown or discussed, including performing functions in a substantially simultaneous manner or in a reverse order depending on the functions involved, which should be understood by those skilled in the art to which the embodiments of the present application pertain.

[0127] The logic and / or steps represented in the flowcharts or otherwise described herein, for example, can be considered as a sequenced list of executable instructions for implementing the logical functions, and can be embodied in any computer-readable medium for use by, or in conjunction with, an instruction execution system, apparatus, or device (e.g., a computer-based system, a system including a processor, or other system that can fetch and execute instructions from an instruction execution system, apparatus, or device). For purposes of this specification, a "computer-readable medium" can be any device that can contain, store, communicate, propagate, or transport a program for use by, or in conjunction with, an instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of computer-readable media include the following: an electrical connection with one or N wires (electronic devices), a portable computer disk cartridge (magnetic device), random access memory (RAM), read-only memory (ROM), erasable and programmable read-only memory (EPROM or flash memory), fiber optic devices, and a portable compact disc read-only memory (CDROM). In addition, the computer-readable medium may even be paper or other suitable medium on which the program is printed, since the program can be obtained electronically by optically scanning the paper or other medium and then editing, interpreting or processing it in other suitable ways as necessary, and then storing it in a computer memory.

[0128] It should be understood that various parts of the present application can be implemented using hardware, software, firmware, or a combination thereof. In the above embodiment, the N steps or methods can be implemented using software or firmware stored in a memory and executed by a suitable instruction execution system. If implemented using hardware, as in another embodiment, any one of the following technologies known in the art or a combination thereof can be used: a discrete logic circuit having a logic gate circuit for implementing a logic function on a data signal, an application-specific integrated circuit having a suitable combination of logic gate circuits, a programmable gate array (PGA), a field programmable gate array (FPGA), etc.

[0129] Those skilled in the art will understand that all or part of the steps in the method of the above embodiment can be completed by instructing related hardware through a program, and the program can be stored in a computer-readable storage medium. When the program is executed, it includes one or a combination of the steps of the method embodiment.

[0130] In addition, the functional units in the various embodiments of the present application may be integrated into a processing module, or each unit may exist physically separately, or two or more units may be integrated into a module. The above-mentioned integrated module may be implemented in the form of hardware or in the form of a software functional module. If the integrated module is implemented in the form of a software functional module and sold or used as an independent product, it may also be stored in a computer-readable storage medium.

[0131] The storage medium mentioned above may be a read-only memory, a magnetic disk, or an optical disk, etc. Although the embodiments of the present application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present application. Persons skilled in the art may make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present application.

Claims

1. A femtosecond laser-based in-situ temperature and morphology monitoring system for chips, characterized in that: include: Broadband femtosecond pulse laser, used to generate femtosecond pulses that meet preset power and wavelength requirements; a time dispersion unit, configured to perform time domain stretching on the femtosecond pulse; A non-polarizing beam splitter is used to split the time-stretched femtosecond pulse into a reference pulse and a detection pulse; a spatial dispersion component for performing spatial dispersion on the detection pulse to obtain a corresponding spatial pulse; a focusing unit, configured to focus the spatial pulses to focus the spatial pulses onto the chip under test, converge the pulses reflected from the chip under test, spatially combine the pulses in combination with the spatial dispersion component to obtain reflected pulses corresponding to the spatial pulses, and couple the reflected pulses into an optical fiber; a high-speed photodetector, configured to collect a pulse signal formed by coupling and interfering the reference pulse and the reflected pulse, and convert the pulse signal into a corresponding analog signal; A high-speed digital oscilloscope, used to collect and sample the analog signal to obtain corresponding sampling pulses; The computer is used to reconstruct the spatial temperature and image information of the chip to be tested based on the sampling pulse, the pre-stored functional relationship and the digital signal processing strategy.

2. The system according to claim 1, wherein: Also includes: The optical fiber amplifier is used to be arranged between the time dispersion unit and the non-polarization beam splitter to compensate for the power loss of the femtosecond pulse after the time domain stretching.

3. The system according to claim 1, wherein: Also includes: a first collimator, configured to be disposed between the time dispersion unit and the non-polarization beam splitter to convert the time-domain stretched femtosecond pulses into corresponding free-space light; The second collimator is configured to be disposed between the non-polarization beam splitter and the high-speed photodetector to convert the free-space light into light corresponding to the light inside the optical fiber.

4. The system according to claim 1, wherein: The spatially dispersed components include: an acousto-optic deflector, configured to adjust the internal driving frequency and propagation direction of the detection pulse to obtain a corresponding deflection pulse; A diffraction grating is used to disperse the deflected pulse into corresponding spatial pulses.

5. The system according to claim 1, wherein: The focusing unit comprises: A microscope objective lens, used for focusing the spatial pulse on the chip to be tested to obtain a corresponding pulse light spot; A plano-convex lens is used to adjust the size of the pulse light spot.

6. A method for simultaneous in-situ monitoring of chip temperature and morphology based on femtosecond laser, characterized in that: The following steps are involved: A femtosecond pulse that meets preset power and wavelength requirements is generated by a preset broadband femtosecond pulse laser, and the femtosecond pulse is subjected to time domain stretching and power loss compensation operations to obtain a corresponding compensated amplified laser signal; Splitting the compensated amplified laser signal into a reference pulse and a probe pulse, adjusting the optical path difference between the reference pulse and the probe pulse so that the reference pulse and the probe pulse interfere with each other, and performing spatial dispersion on the probe pulse to obtain a corresponding spatial pulse; Focusing the spatial pulse onto the chip under test, and after the spatial pulse is reflected from the chip under test, re-combining it in space through a preset focusing unit and spatial dispersion component to obtain a reflected pulse corresponding to the spatial pulse, and coupling the reflected pulse into the optical fiber; The pulse signal formed by coupling and interfering the reference pulse and the reflected pulse is received by a preset high-speed photodetector and a high-speed digital oscilloscope, and the pulse signal is converted into a corresponding analog signal. The analog signal is sampled to obtain a corresponding sampling pulse, and based on the sampling pulse, a pre-stored functional relationship and a digital signal processing strategy, the spatial temperature and image information of the chip to be tested are reconstructed.

7. The method according to claim 6, characterized in that The reconstructing the spatial temperature and image information of the chip to be tested based on the sampling pulse, the pre-stored functional relationship and the digital signal processing strategy includes: Performing a low-frequency filtering operation on the sampling pulse to obtain a corresponding filtered signal, performing a Hilbert transform on the high-frequency component in the filtered signal to generate a transformed component corresponding to the high-frequency component, and obtaining real part information and imaginary part information of the high-frequency component; Based on the preset power and wavelength requirements, a functional relationship between the reflectivity and temperature of the chip to be tested is determined, and the spatial temperature and image information of the chip to be tested are reconstructed according to the real part information, the imaginary part information, the sampling pulse and the functional relationship.

8. An electronic device, characterized in that: include: A memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the program to implement the method for synchronous in-situ monitoring of temperature and morphology of a chip based on a femtosecond laser as described in any one of claims 6 to 7.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: The program is executed by a processor to implement the method for synchronous in-situ monitoring of temperature and morphology of a chip based on femtosecond laser as described in any one of claims 6 to 7.

10. A computer program product comprising a computer program, characterized in that The computer program is executed to implement the method for simultaneous in-situ monitoring of chip temperature and morphology based on femtosecond laser according to any one of claims 6 to 7.

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