Radio frequency magnetron sputtering method and device

Abstract

The invention discloses a radio frequency magnetron sputtering method and device, and relates to the technical field of magnetron sputtering, the radio frequency magnetron sputtering device comprises a gas chamber, a high-voltage auxiliary module, a radio frequency generation device and a control module, the high-voltage auxiliary module is used for direct current luminance build-up, and then the radio frequency generation device is switched for sputtering. Therefore, the defect of slow luminance build-up of pure radio frequency sputtering is overcome, and the starting efficiency of metal target sputtering is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of magnetron sputtering, and in particular to a radio frequency magnetron sputtering method and device. Background Art

[0002] In the field of chip semiconductor manufacturing, magnetron sputtering is a key technology for thin-film deposition, particularly for depositing metal films (such as aluminum, copper, and tungsten). These metal films are often used to form interconnect layers, electrodes, or diffusion barriers, requiring extremely high film uniformity, density, and adhesion to the substrate. Furthermore, production efficiency (i.e., throughput) is a key indicator of process quality.

[0003] The advantages of conventional DC magnetron sputtering lie in its ability to easily achieve glow discharge (i.e., ignition) at relatively low pressures and its relatively simple process. However, prolonged DC sputtering of metal targets can easily lead to the formation of an insulating or semi-insulating layer on the target surface, a phenomenon known as target poisoning. Target poisoning can significantly reduce sputtering efficiency, impacting film quality and process stability.

[0004] Another commonly used method is RF magnetron sputtering. RF sputtering can effectively prevent target poisoning and is applicable to a wider range of target types, including dielectric materials and easily poisoned metal targets. However, for metal targets, especially in the low-pressure environment commonly used in semiconductor processes, RF sputtering is difficult to directly and quickly ignite, and often requires a higher gas pressure or extremely high RF power to stimulate glow discharge. In addition, in order to achieve ignition, it may be necessary to go through a long process of increasing and decreasing the gas pressure, which significantly prolongs the process startup time and results in low overall magnetron sputtering efficiency. Therefore, when performing magnetron sputtering on metal targets, the existing technology finds it difficult to simultaneously take into account the high-efficiency ignition process and avoid the problem of target poisoning.

[0005] In view of the above problems, the existing technology is in urgent need of improvement. Summary of the Invention

[0006] The purpose of the present invention is to provide a radio frequency magnetron sputtering method and device, which can utilize DC high voltage to quickly ignite, overcome the shortcoming of slow ignition of pure radio frequency sputtering, and improve the starting efficiency of metal target sputtering.

[0007] In order to achieve the above object, the technical solutions of the present invention are:

[0008] As one aspect of the present application, a radio frequency magnetron sputtering method is provided, comprising the following steps:

[0009] Providing a gas chamber for supplying a working gas, a high-voltage auxiliary module for generating a DC high-voltage signal, and a radio frequency generating device for providing a radio frequency source;

[0010] The high-voltage auxiliary module outputs a DC high-voltage signal and applies the DC high-voltage signal to the electrode in the gas chamber to ignite the working gas in the gas chamber to form plasma. After the plasma is generated by the high-voltage auxiliary module, the radio frequency generator sends out a radio frequency signal and applies the radio frequency sputtering power corresponding to the radio frequency signal to the target material placed in the gas chamber, thereby sputtering and coating the target material.

[0011] Compared with the existing technology, the RF magnetron sputtering method of the present application uses a high-voltage auxiliary module for DC ignition and then switches to a RF generator for sputtering, thereby overcoming the disadvantage of slow ignition of pure RF sputtering and improving the starting efficiency of metal target sputtering.

[0012] Furthermore, the high-voltage auxiliary module includes:

[0013] An opening circuit, wherein the opening circuit is used to connect to an external power supply and perform power supply control using a relay;

[0014] an oscillation circuit, the oscillation circuit being connected to the start-up circuit and configured to output a pulse signal;

[0015] A boost circuit, the boost circuit being connected to the oscillation circuit and configured to receive a pulse signal and convert it into a high-voltage AC signal;

[0016] a rectifier circuit, the rectifier circuit being connected to the boost circuit, the rectifier circuit being configured to receive a high-voltage AC signal and convert the high-voltage AC signal into a high-voltage DC signal;

[0017] A radio frequency isolation circuit is connected to the rectifier circuit and is used to isolate signals between the high-voltage auxiliary module and the radio frequency generating device.

[0018] Furthermore, the oscillation circuit is constructed based on a UC3842 chip, and a sliding rheostat is configured in the oscillation circuit, and the duty cycle and frequency of the pulse signal are adjusted by using the sliding rheostat.

[0019] Furthermore, the RF isolation circuit is composed of an isolation resistor connected in series with the output end of the high-voltage auxiliary module and an isolation inductor connected in parallel with the isolation resistor. The RF isolation circuit is used to isolate the RF sputtering power and prevent the RF sputtering power from flowing back.

[0020] Furthermore, in the rectifier circuit, the diode used in the rectifier circuit is a fast recovery diode or a Schottky diode.

[0021] In the present application, the high-voltage auxiliary module outputs a DC high-voltage signal and applies the DC high-voltage signal to an electrode in a gas chamber to ignite the working gas in the gas chamber to form a plasma. After the high-voltage auxiliary module generates the plasma, the radio frequency generator emits a radio frequency signal and applies the radio frequency sputtering power corresponding to the radio frequency signal to a target material placed in the gas chamber, thereby performing sputtering coating on the target material. The steps specifically include:

[0022] After receiving the sputtering start command, the start circuit in the high-voltage auxiliary module is driven, and the oscillation circuit, boost circuit and rectifier circuit in the high-voltage auxiliary module are started to generate a DC high-voltage signal, so that the working gas in the gas chamber is ignited to form plasma;

[0023] After receiving the sputtering start command, the start circuit in the high-voltage auxiliary module is driven, and the oscillation circuit, boost circuit and rectifier circuit in the high-voltage auxiliary module are started to generate a DC high-voltage signal, so that the working gas in the gas chamber is ignited to form plasma;

[0024] Detect the signal of plasma formation. If it is detected that the working gas has ignited to form plasma and reached a preliminary stable state, control the DC auxiliary power supply used by the high-voltage auxiliary module to delay shutdown, and adjust the high-voltage auxiliary module and RF generator as follows:

[0025] Within a set time, the duty cycle of the pulse signal output by the oscillation circuit in the high-voltage auxiliary module is adjusted so that the output power corresponding to the DC high-voltage signal generated by the high-voltage auxiliary module gradually decreases from the initial ignition level to zero, and within a time period that is the same as or overlaps with the set time, the RF sputtering power output by the RF generator is adjusted and increased from zero to a preset low power level that maintains the ignition of the working gas to form a plasma;

[0026] After the output power corresponding to the DC high-voltage signal generated by the high-voltage auxiliary module is completely reduced to zero and the high-voltage auxiliary module is turned off, the radio frequency generating device has been increased to a power level sufficient to stably maintain the plasma, and the radio frequency sputtering power of the radio frequency generating device is continued to be increased from the preset low power level to the final set normal radio frequency sputtering power;

[0027] The final set normal RF sputtering power is emitted by the RF generator and applied to the target placed in the gas chamber, thereby sputtering and coating the target.

[0028] Furthermore, the step of detecting the signal of plasma formation, if it is detected that the working gas has ignited to form plasma and reached a preliminary stable state, specifically includes:

[0029] Detecting the glow intensity in the gas chamber or detecting the voltage / current changes of the DC auxiliary power supply used by the high-voltage auxiliary module;

[0030] Determine whether the glow intensity reaches a preset threshold or whether the voltage / current change of the DC auxiliary power supply applied by the high-voltage auxiliary module meets the characteristics of plasma establishment;

[0031] If yes, it is confirmed that the plasma has been successfully ignited and has reached an initial stable state.

[0032] Furthermore, after the output power corresponding to the DC high-voltage signal generated by the high-voltage auxiliary module is completely reduced to zero and the high-voltage auxiliary module is turned off, the RF generator has been increased to a power level sufficient to stably maintain the plasma, and the RF sputtering power of the RF generator is continued to be increased from the preset low power level to the final set normal RF sputtering power, specifically including:

[0033] Continuously monitor key state parameters of the plasma in the gas chamber;

[0034] According to a preset plasma target state range, the key state parameters of the plasma monitored in real time are compared with the target state range. If the key state parameters of the plasma in real time deviate from the target state range, the radio frequency sputtering power output by the radio frequency generator is adjusted. If the key state parameters of the plasma in real time are within the target state range, the radio frequency sputtering power output by the radio frequency generator is increased according to a preset reference rate.

[0035] Finally, the RF sputtering power of the RF generating device is increased from a preset low power level to a final set normal RF sputtering power.

[0036] Furthermore, before the high-voltage auxiliary module outputs a DC high-voltage signal and applies the DC high-voltage signal to an electrode in the gas chamber to ignite the working gas in the gas chamber to form a plasma, and after the high-voltage auxiliary module generates the plasma, the radio frequency generator emits a radio frequency signal and applies the radio frequency sputtering power corresponding to the radio frequency signal to the target material placed in the gas chamber, thereby performing sputtering coating on the target material, the method further includes the following steps:

[0037] Identify the current process recipe and the current status information inside the gas chamber;

[0038] A preset transition parameter database is used to search and apply a matching transition parameter configuration from the preset transition parameter database based on the current process recipe and the current internal state information of the gas; and the output power corresponding to the DC high voltage signal and the RF sputtering power are regulated based on the matching transition parameter configuration.

[0039] As a second aspect of the present application, a radio frequency magnetron sputtering device is provided, comprising:

[0040] a gas chamber for supplying working gas;

[0041] a high-voltage auxiliary module, which is used to generate a predetermined DC high-voltage signal and apply it to the electrodes in the gas chamber to ignite the working gas in the gas chamber to form plasma;

[0042] A radio frequency generator, which is used to generate a plasma using a high-voltage auxiliary module, emit a radio frequency signal from the radio frequency generator and apply a radio frequency sputtering power corresponding to the radio frequency signal to the target material, thereby sputtering and coating the target material;

[0043] A control module is connected to the high-voltage auxiliary module and the radio frequency generating device. The control module can issue a working instruction, and the working instruction is used to instruct the high-voltage auxiliary module and the radio frequency generating device to work.

[0044] The present application discloses an RF magnetron sputtering device, which includes a gas chamber, a high-voltage auxiliary module, an RF generator and a control module. Since the RF magnetron sputtering device applies the RF magnetron sputtering method as described above, it uses the high-voltage auxiliary module for DC ignition and then switches to the RF generator for sputtering, thereby overcoming the disadvantage of slow ignition of pure RF sputtering and improving the starting efficiency of metal target sputtering.

[0045] For better understanding and implementation, the present invention is described in detail below with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] Figure 1 is a flow chart of a radio frequency magnetron sputtering method in this embodiment;

[0047] Figure 2 is a schematic diagram of the structure of a device used in a radio frequency magnetron sputtering method in this embodiment;

[0048] Figure 3 yes Figure 2 A structural diagram showing the specific composition of the high-voltage auxiliary module is shown in FIG.

[0049] Figure 4 4 is a flow chart indicating step S2 in a radio frequency magnetron sputtering method in this embodiment.

[0050] Marking instructions: 1. Gas chamber; 2. High-voltage auxiliary module; 3. RF generator; 4. Control module; 21. Start circuit; 22. Oscillation circuit; 23. Boost circuit; 24. Rectifier circuit; 25. RF isolation circuit. DETAILED DESCRIPTION

[0051] In order to better illustrate the present invention, the present invention is described in further detail below with reference to the accompanying drawings.

[0052] It should be clear that in order to make the purpose, technical solutions and advantages of the embodiments of the present disclosure clearer, the technical solutions in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, not all of the embodiments. The components of the embodiments of the present disclosure generally described and shown in the drawings herein can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present disclosure provided in the drawings is not intended to limit the scope of the present disclosure for protection, but merely represents selected embodiments of the present disclosure. Based on the embodiments of the present disclosure, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present disclosure.

[0053] Based on the existing technology, DC is easy to ignite but prone to poisoning, while RF is resistant to poisoning but difficult to ignite. Based on the above, it is conceivable whether the advantages of both can be combined, that is, using DC power for rapid ignition and then switching to RF power for the main sputtering.

[0054] Therefore, the technical problem actually solved by the present application is how to overcome the shortcoming of slow ignition of pure RF sputtering.

[0055] The following is an explanation using a specific embodiment.

[0056] First, in this embodiment, as Figures 1 to 3 As shown, a radio frequency magnetron sputtering method is provided, comprising the following steps:

[0057] Providing a gas chamber for supplying a working gas, a high-voltage auxiliary module for generating a DC high-voltage signal, and a radio frequency generating device for providing a radio frequency source;

[0058] The high-voltage auxiliary module outputs a DC high-voltage signal and applies the DC high-voltage signal to the electrode in the gas chamber to ignite the working gas in the gas chamber to form plasma. After the plasma is generated by the high-voltage auxiliary module, the radio frequency generator sends out a radio frequency signal and applies the radio frequency sputtering power corresponding to the radio frequency signal to the target material placed in the gas chamber, thereby sputtering and coating the target material.

[0059] Among them, the gas chamber is used to supply working gas (such as argon, etc.) to provide an environment for plasma discharge and target sputtering. The high-voltage auxiliary module is used to generate a DC high-voltage signal, which can be implemented by a power supply circuit capable of outputting high voltage, such as a circuit based on transformer boost and rectification. Its main purpose is to quickly excite the working gas to form plasma at a lower gas pressure. The RF generator is used to provide an RF source, which can be implemented by an RF power supply and an impedance matching network. Its main purpose is to provide energy to maintain the plasma and sputter the target material after the plasma is formed.

[0060] By combining DC high-voltage assisted ignition with RF main sputtering and applying them in the order of DC first and then RF, the problems of pure RF ignition being difficult and time-consuming and pure DC sputtering easily causing target poisoning during magnetron sputtering of metal targets are solved, thereby improving the starting efficiency of metal target sputtering and ensuring the stability of the sputtering process.

[0061] Specifically, the method first provides the key components required for sputtering, including a gas chamber, a high-voltage auxiliary module, and a radio frequency generator. Then, the high-voltage auxiliary module outputs a DC high-voltage signal, and applies the DC high-voltage signal to the electrode in the gas chamber. By applying DC high voltage, the inert working gas in the gas chamber is ionized and ignited to form a plasma. This step takes advantage of the fact that DC discharge is easy to ignite, and overcomes the problem that pure radio frequency is difficult and time-consuming to ignite metal targets at low pressure. After successfully generating plasma and establishing preliminary discharge using the high-voltage auxiliary module, the radio frequency signal is emitted by the radio frequency generator, and the radio frequency sputtering power corresponding to the radio frequency signal is applied to the target placed in the gas chamber, thereby sputtering and coating the target. Through this sequence of DC ignition followed by radio frequency sputtering, the method comprehensively utilizes the advantages of the two power sources, achieving the goal of rapid ignition of metal targets and avoiding target poisoning.

[0062] As a preferred embodiment, the solution of the present application is specifically implemented as follows: the gas chamber is evacuated and an appropriate amount of working gas, such as argon, is introduced. The high-voltage auxiliary module is started to output a DC high-voltage signal of a preset amplitude, which is applied to the electrode in the gas chamber, for example, the target material is used as the cathode, the cavity wall is used as the anode, or an independent ignition electrode is used. Under the action of the DC high voltage, the gas is ionized to form a glow discharge plasma. After the plasma is formed and reaches initial stability, the output power of the high-voltage auxiliary module is reduced or turned off. Subsequently, the RF generator is started to output a RF signal, which is applied to the target material through an impedance matching network. The RF power is gradually increased to the level required for sputtering to maintain plasma discharge and bombard the target surface, so that the target atoms are sputtered out and deposited on the substrate to form a thin film.

[0063] Through the above scheme, the present application overcomes the disadvantage of slow pure RF ignition by first using DC high voltage for rapid ignition; then switches to RF for main sputtering, effectively avoiding target poisoning caused by long-term DC sputtering, and improving sputtering efficiency and film quality.

[0064] Based on the above examples, further application description is given to the high-voltage auxiliary module and the oscillation circuit, rectification circuit and radio frequency isolation circuit in the high-voltage auxiliary module.

[0065] In this embodiment, the high-voltage auxiliary module includes:

[0066] An opening circuit 21 is used to connect to an external power source and control power supply using a relay;

[0067] an oscillation circuit 22, the oscillation circuit 22 being connected to the start-up circuit and configured to output a pulse signal;

[0068] A boost circuit 23, the boost circuit 23 is connected to the oscillation circuit, and the boost circuit is used to receive the pulse signal and convert it into a high-voltage AC signal;

[0069] a rectifier circuit 24 , the rectifier circuit 24 being connected to the boost circuit, and configured to receive a high-voltage AC signal and convert the high-voltage AC signal into a high-voltage DC signal;

[0070] The radio frequency isolation circuit 25 is connected to the rectifier circuit and is used to isolate the signal between the high-voltage auxiliary module and the radio frequency generating device.

[0071] The start-up circuit refers to a circuit for controlling the on / off of the overall power supply of the high-voltage auxiliary module. For example, the start-up circuit can be implemented by a circuit composed of a relay, a switching element (such as a transistor) and a control signal interface.

[0072] An oscillation circuit refers to a circuit that can generate a periodic electrical signal. This signal is usually a pulse waveform and can be implemented using a self-excited or externally excited oscillation circuit based on an oscillator chip (such as a PWM controller).

[0073] A boost circuit is a circuit that can convert an input lower voltage signal into a higher voltage signal, and can be implemented by a boost conversion circuit based on a transformer (such as a high-frequency transformer).

[0074] A rectifier circuit is a circuit that converts an AC signal into a DC signal. It can be implemented using a bridge rectifier circuit composed of diodes or a voltage doubler rectifier circuit.

[0075] The RF isolation circuit refers to a circuit used to prevent RF signals from interfering with each other between the high-voltage auxiliary module and the RF generating device. It can be implemented by a filter structure composed of passive components such as inductors, capacitors, and resistors, or an isolation transformer.

[0076] Preferably, the oscillation circuit is constructed based on a UC3842 chip, and a sliding rheostat is configured in the oscillation circuit, and the duty cycle and frequency of the pulse signal are adjusted by using the sliding rheostat.

[0077] The oscillation circuit is based on the UC3842 chip, which is a commonly used current-mode pulse-width modulation (PWM) controller. The sliding rheostat adjusts the duty cycle and frequency of the pulse signal by connecting the sliding rheostat to a specific pin of the UC3842 chip (for example, to the RT / CT pin that sets the oscillation frequency or to the error amplifier feedback loop). By changing the resistance value of the sliding rheostat, the frequency of the oscillator inside the UC3842 chip or the duty cycle of the output pulse can be changed, thereby adjusting / affecting the output power corresponding to the DC high-voltage signal output by the high-voltage auxiliary module.

[0078] As an illustrative example, the oscillation circuit uses a flyback or forward converter control circuit based on the UC3842 chip. In this circuit, a sliding rheostat is connected in series or in parallel between the RT (timing resistor) pin and ground of the UC3842 chip, or connected to the CT (timing capacitor) pin. By changing the resistance value of the sliding rheostat, the charge and discharge time constant of the oscillator inside the UC3842 chip can be changed, thereby adjusting the frequency of the output pulse. At the same time, the sliding rheostat can also be connected to the feedback pin of the UC3842 chip as part of the error amplifier feedback network, affecting the control voltage by changing the resistance value, thereby adjusting the duty cycle of the output pulse.

[0079] Preferably, the RF isolation circuit is composed of an isolation resistor connected in series with the output end of the high-voltage auxiliary module and an isolation inductor connected in parallel with the isolation resistor. The RF isolation circuit is used to isolate the RF sputtering power and prevent the RF sputtering power from flowing back.

[0080] A radio frequency isolation circuit refers to a circuit structure used to prevent electrical signals in a specific frequency range from being transmitted between circuits.

[0081] Specifically, this solution solves the problem of RF sputtering power flowing back to the high-voltage auxiliary module by setting an RF isolation circuit at the output end of the high-voltage auxiliary module. The RF isolation circuit is composed of an isolation resistor in series and an isolation inductor in parallel with the resistor. The isolation resistor in series provides a certain impedance to limit the backflow current. The isolation inductor in parallel with the isolation resistor can effectively prevent the high-frequency RF sputtering power generated by the RF generator from flowing back to the high-voltage auxiliary module due to the high-impedance characteristics of the inductor to high-frequency signals, especially protecting the high-frequency sensitive inductor and other components in the high-voltage auxiliary module from interference or damage by RF power. At the same time, for the DC or low-frequency ignition signal output by the high-voltage auxiliary module, the parallel inductor presents low impedance, allowing it to pass smoothly without affecting the ignition function. This structure forms a path with high impedance to high-frequency signals, thereby realizing RF isolation between the high-voltage auxiliary module and the RF generator, and ensuring the stable operation of the high-voltage auxiliary module during the ignition and sputtering switching process.

[0082] Preferably, in the rectifier circuit, the diode used in the rectifier circuit is a fast recovery diode or a Schottky diode.

[0083] Fast recovery diodes, or Schottky diodes, are semiconductor diodes with faster switching speeds and / or lower forward voltage drops than conventional rectifier diodes. Fast recovery diodes shorten their reverse recovery time through special doping or structural design, making them suitable for high-frequency rectification. Schottky diodes, on the other hand, utilize a metal-semiconductor junction to form a Schottky barrier, resulting in virtually no reverse recovery time and a low forward voltage drop, making them suitable for high-frequency, low-voltage, or medium-voltage rectification.

[0084] Specifically, the high-voltage auxiliary module generates a high-voltage DC signal through an oscillator circuit, a boost circuit, and a rectifier circuit. During the transition from DC-assisted ignition to RF main sputtering, the output power of the high-voltage auxiliary module must be gradually reduced from its initial level to zero. The rectifier circuit converts the dynamically changing high-voltage AC signal output by the boost circuit into a high-voltage DC signal. When the output power of the high-voltage auxiliary module decreases, the amplitude or frequency of the high-voltage AC signal output by the boost circuit may change, requiring the diodes in the rectifier circuit to quickly respond to these changes. Using fast-recovery diodes or Schottky diodes, due to their fast switching speed, significantly reduces the reverse recovery current and associated voltage / current transients generated during the diode transition from on- to off-state. This enables the rectifier circuit to provide a smoother and more stable DC output when processing the dynamic high-voltage AC signal. A stable DC auxiliary power output helps maintain initial plasma stability even during gradual power reduction, facilitating a smooth takeover of the subsequent RF power supply. This improvement facilitates a seamless transition from DC-assisted ignition to RF main sputtering and reduces plasma instability during the transition.

[0085] A particular technical challenge exists in achieving this goal by rapidly ionizing the gas to form a plasma using a DC high-voltage power supply, then switching to an RF power supply for stable sputtering, thereby overcoming the slow ignition of pure RF. After the DC auxiliary high-voltage power supply completes its ignition task and is shut down, the plasma may experience a brief period of instability before the main RF power supply has fully established a stable discharge. This occurs because the DC auxiliary high-voltage power supply briefly provides high energy to rapidly ionize the gas to form the plasma. However, when this DC power supply is abruptly removed, the plasma loses its primary energy input and experiences a brief decay process, such as electron-ion recombination or particle diffusion to the chamber walls. During this period, if the main RF power supply cannot immediately and smoothly take over and provide sufficient energy to maintain and further stimulate the plasma, the plasma density may temporarily drop or its characteristics may change, leading to plasma instability. This instability, occurring at the initial stages of the sputtering process, can cause transient fluctuations in the target sputtering rate, affecting the energy and angular distribution of the sputtered particles. This can lead to defects in the uniformity, density, or composition of the first few atomic or molecular layers of the metal film deposited on the substrate. This problem is inevitable for this specific two-stage (DC assist + RF main sputtering) ignition method in metal target sputtering applications.

[0086] Therefore, the aforementioned steps are optimized and explained. The high-voltage auxiliary module outputs a DC high-voltage signal and applies the DC high-voltage signal to an electrode in the gas chamber to ignite the working gas in the gas chamber to form a plasma. After the high-voltage auxiliary module generates the plasma, the radio frequency generator emits a radio frequency signal and applies a radio frequency sputtering power corresponding to the radio frequency signal to a target material placed in the gas chamber, thereby performing sputtering coating on the target material. The steps specifically include:

[0087] Step S21: After receiving the sputtering start instruction, driving the start circuit in the high-voltage auxiliary module, and starting the oscillation circuit, the boost circuit, and the rectifier circuit in the high-voltage auxiliary module to generate a DC high-voltage signal, so as to ignite the working gas in the gas chamber and form a plasma;

[0088] Step S22: Detecting a signal of plasma formation. If it is detected that the working gas has ignited to form plasma and reached a preliminary stable state, controlling the DC auxiliary power supply used by the high-voltage auxiliary module to be turned off with a delay, and adjusting the high-voltage auxiliary module and the radio frequency generator as follows:

[0089] Within a set time, the duty cycle of the pulse signal output by the oscillation circuit in the high-voltage auxiliary module is adjusted so that the output power corresponding to the DC high-voltage signal generated by the high-voltage auxiliary module gradually decreases from the initial ignition level to zero, and within a time period that is the same as or overlaps with the set time, the RF sputtering power output by the RF generator is adjusted and increased from zero to a preset low power level that maintains the ignition of the working gas to form a plasma;

[0090] After the output power corresponding to the DC high-voltage signal generated by the high-voltage auxiliary module is completely reduced to zero and the high-voltage auxiliary module is turned off, the radio frequency generating device has been increased to a power level sufficient to stably maintain the plasma, and the radio frequency sputtering power of the radio frequency generating device is continued to be increased from the preset low power level to the final set normal radio frequency sputtering power;

[0091] Step S23: The RF generating device emits the final set normal RF sputtering power and applies it to the target material placed in the gas chamber, thereby performing sputtering coating on the target material.

[0092] The signal for detecting plasma formation refers to determining whether the working gas has been ionized to form plasma and has reached a stable level for the next operation by monitoring certain physical quantities in the gas chamber.

[0093] The delayed shutdown of the DC auxiliary power supply used in the high-voltage auxiliary module means that after the plasma formation is confirmed, the DC high-voltage power supply is not cut off immediately, but is allowed to continue working for a period of time to provide a buffer for the subsequent power transition.

[0094] Adjusting the duty cycle of the pulse signal output by the oscillation circuit in the high-voltage auxiliary module means adjusting the output characteristics of the high-voltage auxiliary module by changing the ratio of the pulse width to the period of the control signal, thereby controlling the output power of the DC high-voltage signal generated by it. This can be achieved by using external circuit parameters of the control chip or digital control signals.

[0095] Adjusting the RF sputtering power output by the RF generator means changing the amount of RF energy applied to the target material by controlling the output amplitude or gain of the RF generator, which can be achieved using analog control signals or digital communication instructions.

[0096] The preset low power level refers to a preset RF power value that is lower than the normal sputtering power but sufficient to maintain the plasma when the DC power is reduced.

[0097] Continuing to increase the RF sputtering power of the RF generator from a preset low power level to the final set normal RF sputtering power means gradually increasing the RF power from the low value in the transition stage to the stable high value required for normal sputtering after the DC assist is completely stopped. This can be achieved by linear increase, staged increase or adjustment based on plasma state feedback.

[0098] Specifically, upon receiving the sputtering start command, this solution first activates the internal circuitry of the high-voltage auxiliary module, generating a high-voltage DC signal that is applied to the electrodes within the gas chamber. Leveraging the DC high voltage's ability to easily induce gas ionization at relatively low pressures, the working gas is rapidly ignited to form a plasma. The system then detects whether the plasma has successfully formed and reached a preliminary stable state. This detection step ensures that subsequent power switching operations are performed based on established plasma. After confirming preliminary plasma stability, the critical power transition phase begins. During this phase, the high-voltage auxiliary module's DC auxiliary power supply is controlled to delay shutdown. Over a set period of time, the duty cycle of the high-voltage auxiliary module's oscillator circuit is adjusted to gradually and smoothly reduce the DC high-voltage power output from the high level required for initial ignition to zero. Simultaneously, or within an overlapping period, the RF generator begins operating and gradually increases its RF sputtering power from zero to a preset low power level. This low power level is set to be sufficient to maintain the plasma during the DC power reduction. This coordinated regulation of gradually decreasing DC power and increasing RF power ensures that the plasma receives continuous and stable energy replenishment during the transition from DC to RF energy input. This prevents plasma instability caused by sudden interruptions or large fluctuations in the energy supply. After the DC output power of the high-voltage auxiliary module drops completely to zero and is shut down, the RF generator has increased its power to a level sufficient to maintain a stable plasma.

[0099] At this point, the solution continues to increase the RF sputtering power of the RF generator from the preset low power level to the final high power level required for normal sputtering. This power increase is performed based on the stable plasma maintained by the RF power supply, ensuring a relatively smooth and stable achievement of the final sputtering energy state.

[0100] Finally, the RF generator continuously applies energy at the final set normal RF sputtering power, sputtering the target material within the gas chamber. Through this detailed, staged, and smooth power transition control, this solution effectively addresses the potential for transient plasma instability during the transition from DC-assisted ignition to RF main sputtering.

[0101] As an illustrative example, the following:

[0102] After receiving the sputtering start command from the host control system, the control module sends a start signal to the high-voltage auxiliary module. The start-up circuit within the high-voltage auxiliary module is energized, and the oscillator circuit begins operating and outputting a pulse signal. This pulse signal is converted into a DC high-voltage signal by the boost circuit and rectifier circuit and applied to the electrodes within the gas chamber, causing the working gas (such as argon) to ignite and form a plasma. The plasma is then initially stabilized. At this point, the control module issues a command to delay the shutdown of the DC auxiliary power supply to the high-voltage auxiliary module and starts a timer with a set transition time of T seconds. Within T seconds, the control module modifies the control signal sent to the high-voltage auxiliary module's oscillator circuit, gradually reducing the duty cycle of the output pulse signal from the initial value to zero, thereby gradually reducing the DC high-voltage power from the ignition level to zero. Simultaneously, within T seconds, the control module sends a control signal to the RF generator, causing its output RF sputtering power to gradually increase linearly from zero to a preset low power level (e.g., 10% of the normal sputtering power). When the DC high-voltage power drops completely to zero and the high-voltage auxiliary module shuts down, the power of the RF generator has reached the preset low power level. Next, the control module continues to send control signals to the RF generator, increasing its RF sputtering power from a preset low power level at a preset rate (e.g., 50W per second) until it reaches the final set normal RF sputtering power (e.g., 500W). Thereafter, the RF generator continues sputtering the target at a power of 500W.

[0103] In the above, a signal for detecting plasma formation is proposed. If it is detected that the working gas has ignited to form plasma and reached a preliminary stable state, it is used as a trigger condition for the subsequent power adjustment step. However, in this process, how to reliably detect whether the plasma has successfully ignited and reached a preliminary stable state to ensure that the subsequent power smooth transition can proceed smoothly and avoid plasma instability.

[0104] In this embodiment, the step of detecting the signal of plasma formation, if it is detected that the working gas has ignited to form plasma and reached a preliminary stable state, specifically includes:

[0105] Step A1: detecting the glow intensity in the gas chamber or detecting the voltage / current change of the DC auxiliary power supply used by the high-voltage auxiliary module;

[0106] Step A2: determining whether the glow intensity reaches a preset threshold or whether the voltage / current change of the DC auxiliary power supply applied by the high-voltage auxiliary module meets the characteristics of plasma establishment;

[0107] If yes, it is confirmed that the plasma has been successfully ignited and has reached an initial stable state.

[0108] Among them, the glow intensity refers to the strength of the visible light radiation generated during the gas discharge process, which can be measured by an optical sensor (for example, a photodiode, a spectrometer). The voltage / current change refers to the change in the voltage and / or current of the DC auxiliary power supply output by the high-voltage auxiliary module when the gas changes from an insulating state to a conductive state (forming plasma). Characteristics that conform to the establishment of plasma refer to changes in the voltage and / or current of the DC auxiliary power supply showing typical electrical characteristics when the gas is ionized to form a plasma, such as a voltage drop and a current increase. The preset threshold refers to a pre-set value when detecting the glow intensity. When the detected glow intensity reaches or exceeds this value, it is considered that the plasma has been formed and has reached initial stability.

[0109] During the process of igniting the gas to form a plasma using a high-voltage DC signal output by the high-voltage auxiliary module, the glow intensity within the gas chamber can be monitored in real time. When the gas is fully ionized to form a plasma, it emits visible light, and its intensity increases significantly. By comparing the detected glow intensity with a preset threshold, when the glow intensity reaches or exceeds the threshold, it can be determined that the plasma has been successfully ignited and has reached a preliminary stable state. As an alternative detection method, the voltage and / or current of the DC auxiliary power supply used by the high-voltage auxiliary module can also be monitored. Before ignition, the gas exhibits high impedance, resulting in a high power supply output voltage and a low current. After ignition, the plasma exhibits low impedance, and the power supply's load characteristics change, typically manifested as a decrease in output voltage and an increase in output current. These voltage and current changes are typical characteristics of plasma establishment. By determining whether the detected voltage and / or current changes meet these characteristics, it can also be reliably confirmed that the plasma has been successfully ignited and has reached a preliminary stable state.

[0110] By combining this reliable plasma detection method with a subsequent smooth power transition step, it is possible to effectively resolve the plasma instability problem that may occur when switching to the RF main power supply after DC-assisted ignition, thereby improving the startup efficiency and stability of the metal target sputtering process.

[0111] In this embodiment, after the output power corresponding to the DC high-voltage signal generated by the high-voltage auxiliary module is completely reduced to zero and the high-voltage auxiliary module is turned off, the RF generator has been increased to a power level sufficient to stably maintain the plasma, and the RF sputtering power of the RF generator is continued to be increased from the preset low power level to the final set normal RF sputtering power, specifically including:

[0112] Step B1, continuously monitoring key state parameters of the plasma in the gas chamber;

[0113] Step B2: comparing the key state parameters of the plasma monitored in real time with the target state range according to a preset plasma target state range; if the key state parameters of the plasma in real time deviate from the target state range, adjusting the RF sputtering power output by the RF generator; if the key state parameters of the plasma in real time are within the target state range, increasing the RF sputtering power output by the RF generator according to a preset reference rate;

[0114] Step B3: Finally, the RF sputtering power of the RF generating device is increased from the preset low power level to the final set normal RF sputtering power.

[0115] Among them, continuous monitoring of the key state parameters of the plasma in the gas chamber refers to the uninterrupted acquisition of important numerical values ​​reflecting the physical or chemical properties of the plasma during the sputtering process, such as the intensity and spectral distribution of the plasma emitted light, the plasma density and the electron temperature.

[0116] The preset plasma target state range refers to the numerical range of key state parameters corresponding to the stable working state that the plasma is expected to maintain during the power boost phase, which can be pre-set and stored in the control system based on experimental data or process requirements.

[0117] Increasing at a preset reference rate means increasing the RF sputtering power output of the RF generator at a predetermined, constant rate when the plasma state is within a target range.

[0118] Specifically, this solution aims to address the plasma instability that can occur when increasing RF power from a preset low level to a normal level during the transition from DC-assisted ignition to RF main sputtering in RF magnetron sputtering, ensuring a smooth transition and maintaining film quality. The key to this solution lies in the introduction of a dynamic RF power adjustment mechanism based on plasma state feedback.

[0119] After the output power corresponding to the DC high-voltage signal generated by the DC auxiliary module drops completely to zero and the high-voltage auxiliary module is shut down, the RF generator has increased its power to a level sufficient to stably maintain the plasma. Based on this, the solution continuously monitors the key state parameters of the plasma in the gas chamber to obtain real-time information on the current operating state of the plasma. These key state parameters reflect important characteristics of the plasma, such as density and energy distribution. The real-time monitored plasma state parameters are then compared with a preset plasma target state range. This target state range represents the stable plasma state desired to be achieved during the RF power increase process. This comparison can determine whether the current plasma state is within the ideal range or whether there is any deviation. If the real-time plasma state deviates from the preset target range, it indicates that the plasma may be unstable or in an undesirable state, and the RF sputtering power output by the RF generator needs to be adjusted. This adjustment is based on feedback and can be corrected based on the actual state of the plasma.

[0120] The above method solves the problem of possible plasma fluctuation or instability when the RF power is increased from a preset low level to a normal level during the switch from DC-assisted ignition to RF main sputtering, ensuring a smooth transition of the sputtering process and improving the quality of the deposited film.

[0121] In this embodiment, before the high-voltage auxiliary module outputs a DC high-voltage signal and applies the DC high-voltage signal to an electrode in the gas chamber to ignite the working gas in the gas chamber to form a plasma, and after the high-voltage auxiliary module generates the plasma, the radio frequency generating device emits a radio frequency signal and applies a radio frequency sputtering power corresponding to the radio frequency signal to a target material placed in the gas chamber, thereby performing sputtering coating on the target material, the method further includes the following steps:

[0122] Step C1, identifying the current process recipe and the current state information inside the gas chamber;

[0123] Step C2: preset a transition parameter database, search and apply a matching transition parameter configuration from the preset transition parameter database based on the current process recipe and the current internal state information of the gas; and control the output power and RF sputtering power corresponding to the DC high voltage signal based on the matching transition parameter configuration.

[0124] Among them, identifying the current process recipe and the current state information inside the gas chamber refers to obtaining the setting parameters of the sputtering process currently being executed (such as gas type, gas pressure, target material type, target power, etc.) and the current physical state of the sputtering chamber (such as temperature, residues after the last process, cavity wall state, etc.). This information can be obtained by reading preset process files from the control system and monitoring the chamber environmental parameters in real time through sensors. The preset transition parameter database refers to a data structure that stores multiple sets of power transition curves or parameter sets optimized for different process recipes and chamber states.

[0125] Specifically, after using DC high voltage to assist ignition and detecting that the plasma is initially stable, this solution does not switch the power immediately or in a fixed pattern. Instead, the control system first obtains the current process recipe information, such as the type of target material being sputtered, the type of working gas, and the gas pressure setting value. At the same time, the system also obtains the current state information inside the gas chamber, which may include the temperature of the chamber, the residual effect of the last sputtering process, or the initial state parameters of the plasma obtained by the sensor. This information is used to determine the specific environment and conditions of the current sputtering process. Next, the control system accesses a pre-established transition parameter database. This database stores the optimal power transition strategies obtained through preliminary experiments or simulation optimization for various typical or critical process recipes and chamber state combinations.

[0126] Based on the identified current process recipe and chamber state, the database is searched for the most matching transition parameter configuration. If a fully matching entry exists, it is directly selected; if not, interpolation or other algorithms can be used to generate the closest configuration. Finally, based on the selected matching transition parameter configuration, the control system precisely controls the output power of the high-voltage auxiliary module to gradually decrease from the ignition level to zero according to a predetermined curve, and within the same or overlapping time period, controls the output power of the RF generator to gradually increase from zero according to a predetermined curve to a level sufficient to stably maintain the plasma, and finally increases to normal sputtering power.

[0127] As a preferred embodiment, the solution of the present application is implemented as follows: In the sputtering control system, a lookup table containing multiple sets of transition parameter configurations is preset. The index of this lookup table can be a combination of a process recipe ID and a chamber status code. For example, for a process recipe involving sputtering an aluminum target, using argon as the working gas, and setting the pressure to 0.5 Pa, and the first startup of the chamber after a long period of downtime, a specific set of transition parameter configurations is stored in the database, including the time for the DC power to linearly decrease, the time for the RF power exponentially to increase, and the overlap time of the two power curves. Upon receiving the sputtering start command, the control system first reads the currently loaded process recipe file to obtain information such as target type, gas type, and gas pressure. Simultaneously, the system queries the chamber status sensor or historical records to obtain information such as chamber temperature and the last process end time, and converts this information into a status code. The system combines the process recipe information and the status code and searches for a matching entry in the preset lookup table. After finding a matching transition parameter configuration, the control system loads these parameters into the power control module. After DC-assisted ignition and detection of initial plasma buildup, the power control module generates time-varying control signals for both DC power and RF power based on the loaded transition parameter configuration. For example, depending on the configuration, the DC power might decrease linearly from the ignition power to zero over 5 seconds, while the RF power might increase exponentially from zero to a preset low power level over the next 3 seconds, overlapping the first 5 seconds, and then linearly increase to the final set normal sputtering power over the next 10 seconds. The control system sends these control signals to the DC-assisted power supply and RF generator, driving them to output power according to a predetermined curve, thereby achieving a smooth power transition.

[0128] Second, if Figure 2 As shown, in this embodiment, a radio frequency magnetron sputtering device is provided, comprising:

[0129] A gas chamber 1, wherein the gas chamber 1 is used to supply working gas;

[0130] A high-voltage auxiliary module 2 is used to generate a predetermined DC high-voltage signal and apply it to the electrodes in the gas chamber to ignite the working gas in the gas chamber to form plasma;

[0131] A radio frequency generator 3, which is used to generate a plasma by using the high-voltage auxiliary module, and then emit a radio frequency signal and apply a radio frequency sputtering power corresponding to the radio frequency signal to the target material, thereby performing sputtering coating on the target material;

[0132] The control module 4 is connected to the high-voltage auxiliary module 2 and the radio frequency generator 3. The control module 4 can issue a working instruction, and the working instruction is used to instruct the high-voltage auxiliary module 2 and the radio frequency generator 3 to work.

[0133] In this embodiment, a radio frequency magnetron sputtering device includes a gas chamber 1, a high-voltage auxiliary module 2, a radio frequency generator 3 and a control module 4. Since the radio frequency magnetron sputtering device applies the radio frequency magnetron sputtering method as described above, the radio frequency magnetron sputtering device has the advantage of using the high-voltage auxiliary module 2 for DC ignition and then switching to the radio frequency generator 3 for sputtering, thereby overcoming the disadvantage of slow ignition of pure radio frequency sputtering and improving the starting efficiency of metal target sputtering.

[0134] Finally, it should be noted that the above-described embodiments are only specific implementation methods of the present disclosure, which are used to illustrate the technical solutions of the present disclosure rather than to limit them. The protection scope of the present disclosure is not limited thereto. Although the present disclosure has been described in detail with reference to the aforementioned embodiments, ordinary technicians in this field should understand that any technician familiar with this technical field can still modify the technical solutions recorded in the aforementioned embodiments within the technical scope disclosed in the present disclosure, or make equivalent replacements for some of the technical features therein; and these modifications, changes or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present disclosure, and should all be covered by the protection scope of the present disclosure.

Claims

1. A radio frequency magnetron sputtering method, characterized in that: The steps include: Providing a gas chamber for supplying a working gas, a high-voltage auxiliary module for generating a DC high-voltage signal, and a radio frequency generating device for providing a radio frequency source; The high-voltage auxiliary module outputs a DC high-voltage signal and applies the DC high-voltage signal to the electrode in the gas chamber to ignite the working gas in the gas chamber to form plasma. After the plasma is generated by the high-voltage auxiliary module, the radio frequency generator sends out a radio frequency signal and applies the radio frequency sputtering power corresponding to the radio frequency signal to the target material placed in the gas chamber, thereby sputtering and coating the target material.

2. The radio frequency magnetron sputtering method according to claim 1, characterized in that: The high-voltage auxiliary module includes: An opening circuit, wherein the opening circuit is used to connect to an external power supply and perform power supply control using a relay; an oscillation circuit, the oscillation circuit being connected to the start-up circuit and configured to output a pulse signal; A boost circuit, the boost circuit being connected to the oscillation circuit and configured to receive a pulse signal and convert it into a high-voltage AC signal; a rectifier circuit, the rectifier circuit being connected to the boost circuit, the rectifier circuit being configured to receive a high-voltage AC signal and convert the high-voltage AC signal into a high-voltage DC signal; A radio frequency isolation circuit is connected to the rectifier circuit and is used to isolate signals between the high-voltage auxiliary module and the radio frequency generating device.

3. The radio frequency magnetron sputtering method according to claim 2, wherein: The oscillation circuit is constructed based on a UC3842 chip. A sliding rheostat is configured in the oscillation circuit, and the duty cycle and frequency of the pulse signal are adjusted by using the sliding rheostat.

4. The radio frequency magnetron sputtering method according to claim 2, wherein: The RF isolation circuit is composed of an isolation resistor connected in series at the output end of the high-voltage auxiliary module and an isolation inductor connected in parallel with the isolation resistor. The RF isolation circuit is used to isolate the RF sputtering power and prevent the reflected power generated by the RF sputtering power from flowing back.

5. The radio frequency magnetron sputtering method according to claim 2, wherein: In the rectifier circuit, the diode used in the rectifier circuit is a fast recovery diode or a Schottky diode.

6. The radio frequency magnetron sputtering method according to claim 2, characterized in that: The high-voltage auxiliary module outputs a DC high-voltage signal and applies the DC high-voltage signal to an electrode in a gas chamber to ignite the working gas in the gas chamber to form a plasma. After the high-voltage auxiliary module generates the plasma, the radio frequency generator emits a radio frequency signal and applies a radio frequency sputtering power corresponding to the radio frequency signal to a target material placed in the gas chamber, thereby performing sputtering coating on the target material. The steps specifically include: After receiving the sputtering start command, the start circuit in the high-voltage auxiliary module is driven, and the oscillation circuit, boost circuit and rectifier circuit in the high-voltage auxiliary module are started to generate a DC high-voltage signal, so that the working gas in the gas chamber is ignited to form plasma; Detect the signal of plasma formation. If it is detected that the working gas has ignited to form plasma and reached a preliminary stable state, control the DC auxiliary power supply used by the high-voltage auxiliary module to delay shutdown, and adjust the high-voltage auxiliary module and RF generator as follows: Within a set time, the duty cycle of the pulse signal output by the oscillation circuit in the high-voltage auxiliary module is adjusted so that the output power corresponding to the DC high-voltage signal generated by the high-voltage auxiliary module gradually decreases from the initial ignition level to zero, and within a time period that is the same as or overlaps with the set time, the RF sputtering power output by the RF generator is adjusted and increased from zero to a preset low power level that maintains the ignition of the working gas to form a plasma; After the output power corresponding to the DC high-voltage signal generated by the high-voltage auxiliary module is completely reduced to zero and the high-voltage auxiliary module is turned off, the radio frequency generating device has been increased to a power level sufficient to stably maintain the plasma, and the radio frequency sputtering power of the radio frequency generating device is continued to be increased from the preset low power level to the final set normal radio frequency sputtering power; The final set normal RF sputtering power is emitted by the RF generator and applied to the target placed in the gas chamber, thereby sputtering and coating the target.

7. The radio frequency magnetron sputtering method according to claim 6, characterized in that: The signal of detecting plasma formation, If it is detected that the working gas has ignited to form plasma and reached a preliminary stable state, the steps specifically include: Detecting the glow intensity in the gas chamber or detecting the voltage / current changes of the DC auxiliary power supply used by the high-voltage auxiliary module; Determine whether the glow intensity reaches a preset threshold or whether the voltage / current change of the DC auxiliary power supply applied by the high-voltage auxiliary module meets the characteristics of plasma establishment; If yes, it is confirmed that the plasma has been successfully ignited and has reached an initial stable state.

8. The radio frequency magnetron sputtering method according to claim 6, characterized in that: The step of increasing the RF sputtering power of the RF generator from a preset low power level to a final set normal RF sputtering power after the output power corresponding to the DC high voltage signal generated by the high voltage auxiliary module is completely reduced to zero and the high voltage auxiliary module is turned off, wherein the RF generator has been increased to a power level sufficient to stably maintain the plasma, and further increasing the RF sputtering power of the RF generator from a preset low power level to a final set normal RF sputtering power, specifically includes: Continuously monitor key state parameters of the plasma in the gas chamber; According to a preset plasma target state range, the key state parameters of the plasma monitored in real time are compared with the target state range. If the key state parameters of the plasma in real time deviate from the target state range, the radio frequency sputtering power output by the radio frequency generator is adjusted. If the key state parameters of the plasma in real time are within the target state range, the radio frequency sputtering power output by the radio frequency generator is increased according to a preset reference rate. Finally, the RF sputtering power of the RF generating device is increased from a preset low power level to a final set normal RF sputtering power.

9. The radio frequency magnetron sputtering method according to claim 6, characterized in that: Before the high-voltage auxiliary module outputs a DC high-voltage signal and applies the DC high-voltage signal to an electrode in a gas chamber to ignite the working gas in the gas chamber to form a plasma, and after the high-voltage auxiliary module generates the plasma, the radio frequency generating device emits a radio frequency signal and applies a radio frequency sputtering power corresponding to the radio frequency signal to a target material placed in the gas chamber, thereby performing sputtering coating on the target material, the method further includes the following steps: Identify the current process recipe and the current status information inside the gas chamber; A preset transition parameter database is used to search and apply a matching transition parameter configuration from the preset transition parameter database based on the current process recipe and the current internal state information of the gas; and the output power corresponding to the DC high voltage signal and the RF sputtering power are regulated based on the matching transition parameter configuration.

10. A radio frequency magnetron sputtering device, characterized in that: include: a gas chamber for supplying working gas; a high-voltage auxiliary module, which is used to generate a predetermined DC high-voltage signal and apply it to the electrodes in the gas chamber to ignite the working gas in the gas chamber to form plasma; A radio frequency generator, which is used to generate a plasma using a high-voltage auxiliary module, emit a radio frequency signal from the radio frequency generator and apply a radio frequency sputtering power corresponding to the radio frequency signal to the target material, thereby sputtering and coating the target material; A control module is connected to the high-voltage auxiliary module and the radio frequency generating device. The control module can issue a working instruction, and the working instruction is used to instruct the high-voltage auxiliary module and the radio frequency generating device to work.

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