Box structure, manufacturing method thereof and electrochromic device
By adopting a metal connection structure in a high-thickness box structure and using brazing connection, the electrical performance inconsistency and reliability problems caused by low electron density are solved, and the reliability of the high-thickness box structure and the consistency of electrical performance are achieved.
Patent Information
- Application Number
- CN202511061648.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-31
- Publication Date
- 2025-09-16
Smart Images
Figure CN120652712A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of displays, and in particular to a box structure and a manufacturing method thereof, and an electrochromic device. Background Art
[0002] Optoelectronic functional devices (such as electrochromic devices, liquid crystal display devices, etc.) generally adopt a box structure composed of two glass substrates; in this box structure, the optoelectronic medium (such as electrochromic materials, liquid crystal molecules, etc.) is sandwiched between the two glass substrates. The inner side surfaces of the two glass substrates are generally provided with metal electrodes or transparent electrodes (transparent electrodes are generally made of transparent conductive layers such as indium tin oxide) for applying driving voltage to achieve optical performance regulation.
[0003] Currently, in order to achieve circuit conductivity between two glass substrates, conductive electrons (such as conductive gold balls) are usually sandwiched in the gap between the two glass substrates. This design is widely used in box structures with low box thickness (box thickness within 10μm). Its advantage is that the conductive electrons are highly uniformly distributed, which can achieve stable electrical connection. However, for box structures with high box thickness (box thickness exceeding 10μm, especially exceeding 100μm), if conductive electrons are used for conduction, the density of conductive electrons is generally low (due to the increase in the gap, the number of conductive electrons that can be accommodated per unit area decreases geometrically (the distance between particles increases)). The small number of particles leads to large statistical fluctuations in the current path (the number of particles is random, and when the number is small, this randomness is more obvious, and the proportion of the change in number relative to the mean is larger), making it difficult to ensure the consistency of the device's electrical performance in mass production. Moreover, since conductive electrons rely on elastic deformation to maintain contact, particles need to withstand greater compressive displacement in box structures with high box thickness, and are prone to plastic deformation under long-term stress, which makes them prone to failure in subsequent processes, thereby causing device failure and insufficient reliability. Summary of the Invention
[0004] The technical problem to be solved by the present invention is to provide a cell structure and its manufacturing method and an electrochromic device, which can not only ensure the reliability of electrical conduction but also effectively guarantee the consistency of the electrical performance of the device in mass production. The technical solution adopted is as follows: A box structure comprises a first glass substrate and a second glass substrate arranged opposite to each other, the first glass substrate and the second glass substrate being bonded to each other via a sealing rubber ring, with a gap between the first glass substrate and the second glass substrate; the box structure is characterized in that: the box structure also comprises a metal connection structure, the metal connection structure is arranged in the gap, the metal connection structure comprises a first metal layer, a second metal layer and at least one metal connection block, the first metal layer is arranged on a first side surface of the first glass substrate close to the second glass substrate, the second metal layer is arranged on a first side surface of the second glass substrate close to the first glass substrate, the metal connection block is arranged between the first metal layer and the second metal layer, the metal connection block is made of a low-melting-point metal, and two sides of the metal connection block are respectively brazed to the connection parts of the first metal layer and the connection parts of the second metal layer.
[0005] The brazing connection refers to a connection formed when the low-melting-point metal is in a molten state and its two sides respectively wet the first metal layer and the second metal layer and solidify after cooling.
[0006] In this box structure with a high box thickness, a metal connection structure consisting of a first metal layer, a second metal layer, and a metal connection block is provided in the gap between the first glass substrate and the second glass substrate. The first metal layer and the second metal layer are provided on the first glass substrate and the second glass substrate, respectively. The two sides of the metal connection block are respectively brazed to the first metal layer and the second metal layer. On the one hand, since the connection formed is a brazing connection, compared with the nearly point contact connection formed by the elastic contact of the conductive electrons, it has a larger connection area and is not easy to loosen. This box structure has high connection reliability, thereby ensuring the reliability of electrical conduction. In addition, the circuit between the first glass substrate and the second glass substrate is achieved through the metal connection structure. Compared with the randomness of the number of conductive electrons in the existing technology, it can effectively ensure the consistency of the electrical performance of the device in mass production.
[0007] As a preferred embodiment of the present invention, the low-melting-point metal is one of indium-tin alloy (In-Sn), tin-bismuth alloy (Sn-Bi), lead-tin alloy (Pb-Sn), and silver-tin alloy (Ag-Sn). Indium-tin alloy (In-Sn) has a melting point of approximately 120°C; tin-bismuth alloy (Sn-Bi) can be Sn63Pb37, which has a melting point of 138°C and is lead-free and environmentally friendly; lead-tin alloy (Pb-Sn) has a melting point of 183°C, but the presence of lead requires attention to environmental restrictions; and silver-tin alloy (Ag-Sn) can be Ag3Sn, which has a melting point of 221°C and is suitable for high-temperature applications.
[0008] As a preferred embodiment of the present invention, the connection portion of the first metal layer is patterned into a local pattern; the metal connection block is within the scope of the local pattern. Specifically, the local pattern can be a small contact pattern, such as a circular or square contact with a size not greater than 2 mm.
[0009] As a preferred solution of the present invention, a first transparent conductive layer is provided on the first side surface of the first glass substrate, and the first metal layer is a thin metal layer covering the first transparent conductive layer.
[0010] As a further preferred embodiment of the present invention, the material of the first metal layer is Ag, Au, Cu, Pd, AgAu, AgCu, AgPd alloy or AgAuPd alloy.
[0011] As another preferred embodiment of the present invention, a first transparent conductive layer is provided on the first side of the first glass substrate, and the first metal layer is formed by converting the surface of the first transparent conductive layer. This eliminates the need for a dedicated process for patterning the first metal layer (specifically, including coating and photolithography).
[0012] As a further preferred embodiment of the present invention, the first transparent conductive layer is an indium tin oxide thin film; and the first metal layer is an indium tin alloy thin layer formed by reducing the indium tin oxide layer.
[0013] The first side of the second glass substrate may also be provided with a second transparent conductive layer, and the second metal layer is a thin metal layer covering the second transparent conductive layer. Alternatively, the first side of the second glass substrate may be provided with only the second metal layer (the second metal layer extends directly into the cell to form a circuit or electrode). As a preferred embodiment of the present invention, the second metal layer is made of Ag, Au, Cu, Pd, AgAu, AgCu, an AgPd alloy, or an AgAuPd alloy.
[0014] As a preferred embodiment of the present invention, the thickness of the gap is 50 μm to 500 μm.
[0015] As a further preferred embodiment of the present invention, the thickness of the gap is 100 μm to 200 μm.
[0016] As a preferred embodiment of the present invention, the sealing rubber ring is made of UV curing adhesive, which can achieve low-temperature curing and avoid the influence of high temperature on low-melting-point metals.
[0017] The present invention also provides an electrochromic device characterized by: a main body comprising the aforementioned box structure, wherein an electrochromic medium layer is sandwiched between a first glass substrate and a second glass substrate of the box structure. The electrochromic medium layer can be made of a solution-type ionic viologen material or a solution-type viologen derivative material. Specifically, an opening can be left in the sealing rubber ring, and a liquid electrochromic material can be introduced between the first and second glass substrates by vacuum infusion to form the electrochromic medium layer.
[0018] The present invention also provides a method for manufacturing a box structure, which is characterized by comprising the following steps: S1, providing a first glass substrate and a second glass substrate, disposing a first metal layer on a first side surface of the first glass substrate, and disposing a second metal layer on a first side surface of the second glass substrate; S2. Disposing a sealing rubber ring on the first side surface of the first glass substrate or the first side surface of the second glass substrate; S3. Disposing a paste (such as solder paste) composed of low-melting-point metal particles on the connection portion of the first metal layer or the connection portion of the second metal layer; S4. Arrange the first side surface of the first glass substrate and the first side surface of the second glass substrate opposite to each other and bring them close to each other, so that the first glass substrate and the second glass substrate are bonded to each other via the sealing rubber ring, with a gap between the first glass substrate and the second glass substrate, and the paste is sandwiched between the connecting portion of the first metal layer and the second metal layer; S5, heating the paste to melt it into metal droplets, and the metal droplets respectively infiltrate the first metal layer and the second metal layer; S6. Cooling the metal droplets to solidify them to form metal connection blocks, and forming brazing connections between two sides of the metal connection blocks and the connection parts of the first metal layer and the second metal layer, respectively, to obtain the box structure.
[0019] In the method for manufacturing the above-mentioned box structure, through steps S1 to S4, the first metal layer on the first glass substrate and the second metal layer on the second glass substrate can be arranged opposite to each other, and the paste composed of low-melting-point metal particles is confined between the connection parts of the first metal layer and the second metal layer; in step S5, the paste is heated to a temperature exceeding the melting point of the paste, so that the paste melts into metal droplets, thereby utilizing the liquid properties of the metal droplets to make the metal droplets form infiltration with the first metal layer and the second metal layer respectively; in step S6, the metal droplets are cooled to solidify into metal connecting blocks, so that the two sides of the metal connecting blocks are respectively connected to the connection parts of the first metal layer. A brazing connection is formed at the connection portion of the first and second metal layers to obtain a metal connection structure connected between the first glass substrate and the second glass substrate. On the one hand, since the connection formed is a brazing connection, compared with the nearly point contact connection formed by the elastic contact of the conductive electrons, it has a larger connection area, making it not easy to loosen. This box structure has high connection reliability, thereby ensuring the reliability of conductivity. Moreover, the conduction of the circuit between the first glass substrate and the second glass substrate is achieved through the metal connection structure. Compared with the randomness of the number brought by the conductive electrons in the existing technology, the consistency of the electrical performance of the device in mass production can be effectively guaranteed.
[0020] Specifically, the paste in step S3 can be applied using a dispensing method or a printing method. The thickness of the applied paste is generally greater than the thickness of the box (i.e., the thickness of the gap between the first and second glass substrates). As a preferred embodiment of the present invention, the paste in step S3 is applied using a printing method. If the sealing rubber ring is applied to the first side of the first glass substrate in step S2, the paste is printed on the first side of the second glass substrate in step S3. If the sealing rubber ring is applied to the first side of the second glass substrate in step S2, the paste is printed on the first side of the first glass substrate in step S3. This prevents interference between the sealing rubber ring and the paste.
[0021] As a preferred solution of the present invention, the sealing rubber ring is provided with a spacer, which is a spacer ball or other spacer used to control the thickness of the box, such as a glass ball, and its size is equivalent to the thickness of the box.
[0022] As a further preferred embodiment of the present invention, the size of the spacer is 50 μm to 500 μm. Specifically, the spacer is a glass ball with a diameter of 100 μm to 200 μm.
[0023] As a preferred embodiment of the present invention, in step S1, the connection portion of the first metal layer is graphicized into a local pattern, so that in step S5, when the metal droplet infiltrates the first metal layer, it is confined within the local pattern range of the first metal layer.
[0024] As a preferred solution of the present invention, in step S1, the first metal layer and the second metal layer are metal film layers deposited by vacuum coating.
[0025] As a further preferred embodiment of the present invention, the material of the first metal layer and the second metal layer is Ag, Au, Cu, Pd, AgAu, AgCu, AgPd alloy or AgAuPd alloy.
[0026] As a preferred solution of the present invention, in step S1, a first transparent conductive layer is first provided on the first surface of the first glass substrate, and then the first metal layer is covered on the first transparent conductive layer.
[0027] As another preferred embodiment of the present invention, in step S1, a first transparent conductive layer is first formed on the first surface of the first glass substrate, and then the surface of the first transparent conductive layer at the connection portion is converted into the first metal layer. This eliminates the need for the dedicated process of patterning the first metal layer, including the coating and photolithography steps.
[0028] As a further preferred embodiment of the present invention, the first transparent conductive layer is an indium tin oxide thin film, and the surface of the transparent conductive layer at the connection portion is converted into an indium tin alloy thin layer by an electrochemical reduction method to form the first metal layer.
[0029] As a further preferred embodiment of the present invention, the first transparent conductive layer serves as a cathode and is partially exposed to an electrolyte, thereby converting a portion of the surface of the indium tin oxide film into a first metal layer. Specifically, the electrolyte is a 0.1M sodium hydroxide solution (NaOH solution) with a current density of 5-10 mA / cm².
[0030] As a preferred embodiment of the present invention, the sealing rubber ring is made of UV curing adhesive, and the curing process in step S5 does not require heating, which will not affect the curing of the paste.
[0031] As a preferred embodiment of the present invention, in step S3, the low-melting-point metal particles are micron-sized (less than 10 μm) tin-bismuth alloy particles; and in step S5, the heating temperature of the paste is 100-150°C.
[0032] Compared with the prior art, the present invention has the following advantages: The present invention provides a metal connection structure consisting of a first metal layer, a second metal layer, and a metal connection block in the gap between the first glass substrate and the second glass substrate. The first metal layer and the second metal layer are respectively provided on the first glass substrate and the second glass substrate, and the two sides of the metal connection block are respectively brazed to the first metal layer and the second metal layer. On the one hand, since the connection formed is a brazing connection, compared with the nearly point contact connection formed by the elastic contact of the conductive electrons, it has a larger connection area, making it less likely to loosen. This box structure has high connection reliability, thereby ensuring the reliability of electrical conduction. In addition, the metal connection structure realizes the conduction of the circuit between the first glass substrate and the second glass substrate. Compared with the randomness of the number of conductive electrons in the prior art, it can effectively ensure the consistency of the electrical performance of the device in mass production. BRIEF DESCRIPTION OF THE DRAWINGS
[0033] Figure 1 It is a structural schematic diagram of the box structure provided in Example 1 of the preferred embodiment of the present invention.
[0034] Figure 2 Schematic diagram of steps S1-S3 in the method for manufacturing a box structure provided in Example 1 of the preferred embodiment of the present invention.
[0035] Figure 3 It is a schematic diagram of step S4 in the method for manufacturing the box structure provided in Example 1 of the preferred embodiment of the present invention.
[0036] Figure 4 Schematic diagram of steps S5-S6 in the method for manufacturing a box structure provided in Example 1 of the preferred embodiment of the present invention.
[0037] Figure 5 It is a schematic diagram of forming the first metal layer by using an oxidation-reduction method in step S1 of the method for manufacturing a box structure provided in Example 2 of a preferred embodiment of the present invention. DETAILED DESCRIPTION
[0038] Example 1, as Figure 1As shown, the electrochromic device provided in this embodiment has a main body of a high-thickness box structure 100, which includes a first glass substrate 1 and a second glass substrate 2 arranged opposite to each other. The first glass substrate 1 and the second glass substrate 2 are bonded to each other via a sealing rubber ring 3, and a gap 10 is formed between the first glass substrate 1 and the second glass substrate 2; a metal connection structure 4 is provided in the gap 10, and the metal connection structure 4 includes a first metal layer 41, a second metal layer 42 and at least one metal connection block 43, the first metal layer 41 is provided on a first side surface of the first glass substrate 1 close to the second glass substrate 2, and the second metal layer 42 is provided on a first side surface of the first glass substrate 1 close to the second glass substrate 2. 42 is provided on a first side surface of the second glass substrate 2 adjacent to the first glass substrate 1. A metal connecting block 43 is provided between the first metal layer 41 and the second metal layer 42. The metal connecting block 43 is made of a low-melting-point metal. Two sides of the metal connecting block 43 are respectively connected to the connecting portions of the first metal layer 41 and the connecting portions of the second metal layer 42 by brazing (a brazing connection refers to a connection formed by the low-melting-point metal in a molten state, with its two sides respectively infiltrating the first metal layer 41 and the second metal layer 42, and then solidifying by cooling). An electrochromic medium layer 200 is sandwiched between the first glass substrate 1 and the second glass substrate 2.
[0039] In this embodiment, the connection portion of the first metal layer 41 is patterned into a local pattern; the metal connection block 43 is within the scope of the local pattern. Specifically, the local pattern can be a smaller contact pattern, such as a circular or square contact with a size not greater than 2 mm.
[0040] In this embodiment, a first transparent conductive layer 11 is provided on the first side of the first glass substrate 1, and a first metal layer 41 is a thin metal layer covering the first transparent conductive layer 11. A second transparent conductive layer 21 is provided on the first side of the second glass substrate 2, and a second metal layer 42 is a thin metal layer covering the second transparent conductive layer 21. The first transparent conductive layer 11 and the second transparent conductive layer 21 are indium tin oxide thin films.
[0041] In this embodiment, the material of the first metal layer 41 and the second metal layer 42 is Ag, Au, Cu, Pd, AgAu, AgCu, AgPd alloy or AgAuPd alloy; the low melting point metal is indium tin alloy (In-Sn), and the melting point of indium tin alloy (In-Sn) is about 120°C.
[0042] In this embodiment, the thickness of the gap 10 is 150 μm.
[0043] In this embodiment, the sealing rubber ring 3 is made of UV curing adhesive.
[0044] In this embodiment, the electrochromic medium layer 200 utilizes a solution of ionic viologen-based materials and a solution of viologen derivatives. Specifically, an opening is left in the sealing rubber ring 3, and the liquid electrochromic material is injected between the first and second glass substrates 1 and 2 via vacuum infusion to form the electrochromic medium layer 200.
[0045] like Figure 2-Figure 4 As shown, this embodiment also provides a method for manufacturing the box structure 100, comprising the following steps: S1, providing a first glass substrate 1 and a second glass substrate 2, disposing a first metal layer 41 on a first side surface of the first glass substrate 1, and disposing a second metal layer 42 on a first side surface of the second glass substrate 2; S2, disposing a sealing rubber ring 3 on the first side surface of the first glass substrate 1; S3. Disposing a paste 430 (such as solder paste) composed of low-melting-point metal particles 431 on the connection portion of the second metal layer 42; S4. Arrange the first side surface of the first glass substrate 1 and the first side surface of the second glass substrate 2 opposite to each other and bring them close to each other, so that the first glass substrate 1 and the second glass substrate 2 are bonded to each other via the sealing rubber ring 3, with a gap 10 between the first glass substrate 1 and the second glass substrate 2, and the paste 430 is sandwiched between the connecting portion of the first metal layer 41 and the second metal layer 42; S5, heating the paste 430 to melt it into metal droplets, and the metal droplets respectively infiltrate the first metal layer 41 and the second metal layer 42; S6. Cool the metal droplets to solidify them to form a metal connection block 43. Two sides of the metal connection block 43 are respectively brazed to the connection parts of the first metal layer 41 and the connection parts of the second metal layer 42 to obtain a box structure 100.
[0046] In this embodiment, in step S1, a first transparent conductive layer 11 is first provided on the first side surface of the first glass substrate 1, and then a first metal layer 41 is covered on the first transparent conductive layer 11. The first transparent conductive layer 11 is an indium tin oxide thin film. The first metal layer 41 and the second metal layer 42 are metal film layers deposited by vacuum coating. The material of the first metal layer 41 and the second metal layer 42 is Ag, Au, Cu, Pd, AgAu, AgCu, AgPd alloy, or AgAuPd alloy.
[0047] In this embodiment, in step S1 , the connection portion of the first metal layer 41 is patterned into a local pattern, so that in step S5 , when the metal droplet infiltrates the first metal layer 41 , it is confined within the local pattern of the first metal layer 41 .
[0048] In this embodiment, the paste 430 in step S3 is applied by printing, and the low-melting-point metal particles 431 are micron-sized (less than 10 μm) tin-bismuth alloy particles. The paste 430 is heated to a temperature of 100-150°C in step S5. This prevents interference between the sealing rubber ring 3 and the paste 430.
[0049] In this embodiment, the sealing rubber ring 3 is made of UV-curable adhesive. The curing process in step S5 does not require heating, which does not affect the melting of the paste 430. The sealing rubber ring 3 includes a spacer 30, which is a spacer such as a ball, for controlling the thickness of the box, such as a glass ball with a diameter of 200 μm.
[0050] Example 2: Figure 5 As shown, while all other parts are the same as those of the first embodiment, the difference is that a first transparent conductive layer 11 is provided on the first side surface of the first glass substrate 1, and the first metal layer 41 is formed by converting the surface of the first transparent conductive layer 11. As a result, the process of patterning the first metal layer 41 (specifically, including coating and photolithography processes) can be omitted.
[0051] In the method for manufacturing the cell structure provided in this embodiment, in step S1, a first transparent conductive layer 11 is first formed on the first surface of the first glass substrate 1, and then the surface of the first transparent conductive layer 11 at the connection portion is converted into a first metal layer 41. This eliminates the need for the dedicated process of patterning the first metal layer 41, which includes coating and photolithography steps.
[0052] In this embodiment, the first transparent conductive layer 11 is an indium tin oxide thin film. The first transparent conductive layer 11 is electrochemically reduced by using the carbon rod 60 as an anode and the first transparent conductive layer 11 as a cathode. The carbon rod 60 is locally contacted with an electrolyte 70 (the electrolyte 70 can be a 0.1M sodium hydroxide solution (NaOH solution) with a current density of 5-10 mA / cm²). The surface of the indium tin oxide thin film at the connection portion is converted into a thin indium tin alloy layer to form the first metal layer 41.
[0053] In addition, it should be noted that the names of the various parts of the specific embodiments described in this specification may be different. Any equivalent or simple changes based on the structure, features, and principles of the patent concept of the present invention are included in the scope of protection of the patent of this invention. Those skilled in the art of the art to which the present invention relates may make various modifications, supplements, or replace the specific embodiments described in the present invention with similar methods. As long as they do not deviate from the structure of the present invention or exceed the scope defined by the claims, they shall fall within the scope of protection of the present invention.
Claims
1. A box structure comprising a first glass substrate and a second glass substrate disposed opposite each other, the first glass substrate and the second glass substrate being bonded to each other via a sealing rubber ring, with a gap being defined between the first glass substrate and the second glass substrate; characterized in that: The box structure also includes a metal connection structure, which is arranged in the gap. The metal connection structure includes a first metal layer, a second metal layer and at least one metal connection block. The first metal layer is arranged on the first side of the first glass substrate close to the second glass substrate, the second metal layer is arranged on the first side of the second glass substrate close to the first glass substrate, and the metal connection block is arranged between the first metal layer and the second metal layer. The metal connection block is composed of a low-melting-point metal, and both sides of the metal connection block are respectively brazed with the connection parts of the first metal layer and the connection parts of the second metal layer.
2. A box structure according to claim 1, characterized in that: The low melting point metal is one of indium tin alloy, tin-bismuth alloy, lead-tin alloy and silver-tin alloy.
3. A box structure according to claim 1, characterized in that: The connection portion of the first metal layer is patterned into a local pattern; the metal connection block is within the range of the local pattern.
4. A box structure according to claim 1, characterized in that: A first transparent conductive layer is provided on the first side surface of the first glass substrate, and the first metal layer is a metal thin layer covering the first transparent conductive layer.
5. A box structure according to claim 1, characterized in that: A first transparent conductive layer is provided on the first side surface of the first glass substrate, and the first metal layer is formed by converting the surface of the first transparent conductive layer.
6. A box structure according to claim 5, characterized in that: The first transparent conductive layer is an indium tin oxide thin film; and the first metal layer is an indium tin alloy thin layer formed by reducing the indium tin oxide layer.
7. A box structure according to claim 1, characterized in that: The thickness of the gap is 50 μm to 500 μm.
8. A box structure according to claim 7, characterized in that: The thickness of the gap is 100 μm to 200 μm.
9. An electrochromic device, characterized in that: The main body thereof is the box structure according to any one of claims 1 to 8, and an electrochromic medium layer is sandwiched between the first glass substrate and the second glass substrate of the box structure.
10. A method for manufacturing a box structure, characterized in that The steps include: S1, providing a first glass substrate and a second glass substrate, disposing a first metal layer on a first side surface of the first glass substrate, and disposing a second metal layer on a first side surface of the second glass substrate; S2. Disposing a sealing rubber ring on the first side surface of the first glass substrate or the first side surface of the second glass substrate; S3. Disposing a paste (such as solder paste) composed of low-melting-point metal particles on the connection portion of the first metal layer or the connection portion of the second metal layer; S4. Arrange the first side surface of the first glass substrate and the first side surface of the second glass substrate opposite to each other and bring them close to each other, so that the first glass substrate and the second glass substrate are bonded to each other via the sealing rubber ring, with a gap between the first glass substrate and the second glass substrate, and the paste is sandwiched between the connecting portion of the first metal layer and the second metal layer; S5, heating the paste to melt it into metal droplets, and the metal droplets respectively infiltrate the first metal layer and the second metal layer; S6. Cooling the metal droplets to solidify them to form metal connection blocks, and forming brazing connections between two sides of the metal connection blocks and the connection parts of the first metal layer and the second metal layer, respectively, to obtain the box structure.
11. The method for manufacturing a box structure according to claim 10, characterized in that: The paste in step S3 is provided by a printing method; If the sealing rubber ring is disposed on the first side surface of the first glass substrate in step S2, then the paste is printed on the first side surface of the second glass substrate in step S3; If the sealing rubber ring is disposed on the first side surface of the second glass substrate in step S2 , then the paste is printed on the first side surface of the first glass substrate in step S3 .
12. The method for manufacturing a box structure according to claim 10, characterized in that: The sealing rubber ring is provided with a spacer, and the size of the spacer is 50 μm to 500 μm.
13. The method for manufacturing a box structure according to claim 10, characterized in that: The connection portion of the first metal layer is patterned into a local pattern, so that in the step S5, when the metal droplet infiltrates the first metal layer, it is confined within the local pattern range of the first metal layer.
14. The method for manufacturing a box structure according to claim 10, characterized in that: The first metal layer and the second metal layer are metal film layers deposited by vacuum coating.
15. The method for manufacturing a box structure according to claim 10, characterized in that: In the step S1 , a first transparent conductive layer is firstly provided on the first surface of the first glass substrate, and then the first metal layer is covered on the first transparent conductive layer.
16. The method for manufacturing a box structure according to claim 10, characterized in that: In the step S1 , a first transparent conductive layer is firstly provided on the first surface of the first glass substrate, and then the surface of the first transparent conductive layer at the connection portion is converted into the first metal layer.
17. The method for manufacturing a box structure according to claim 16, characterized in that: The first transparent conductive layer is an indium tin oxide thin film, and the surface of the transparent conductive layer at the connection portion is converted into an indium tin alloy thin layer by an electrochemical reduction method to form the first metal layer.
18. The method for manufacturing a box structure according to claim 17, characterized in that: The first transparent conductive layer is used as a cathode and is partially in contact with an electrolyte, so that a local surface of the indium tin oxide film is converted into a first metal layer.
19. The method for manufacturing a box structure according to claim 10, wherein: The material of the sealing rubber ring is UV curing glue.
20. The method for manufacturing a box structure according to claim 10, wherein: In the step S3, the low-melting-point metal particles are micron-sized tin-bismuth alloy particles; and in the step S5, the heating temperature of the paste is 100-150°C.