Apparatus and method for growing silicon single crystal ingot

Abstract

In one embodiment, there is provided an apparatus for growing a silicon (Si) single crystal ingot, the apparatus comprising: a chamber; a crucible which is provided in the chamber and accommodates a Si melt; the heating unit is arranged on the periphery and / or the lower part of the crucible; a first water-cooled tube fixed to an upper portion in the chamber and provided on the periphery of a Si single crystal ingot grown and raised from the Si melt; a heat insulating member provided in an adjacent region of the crucible; a thermal barrier disposed on the crucible and an upper portion of the thermal insulation member; a lifting member for lifting the thermal barrier; a second water-cooled tube connected to the lifting member to be lifted up and down, and provided on the thermal barrier; and a current measuring unit for measuring a current between the lifting member and the heat insulating member.

Description

Technical Field

[0001] The present invention relates to an apparatus and method for growing a silicon single crystal ingot, and more particularly to improving the quality of a grown and upwardly pulled silicon single crystal ingot by precisely controlling the length of a water-cooling tube. Background Art

[0002] Silicon wafers are typically manufactured through a single crystal growth process to produce a single crystal ingot, a slicing process to cut the single crystal ingot to obtain thin disk-shaped wafers, a grinding process to remove damage to the wafers caused by machining during the slicing process, a polishing process to mirror-polish the wafers, and a cleaning process to remove polishing agents or foreign matter from the mirror-polished wafers.

[0003] In the above process, the process of growing a silicon single crystal can be performed using the Czochralski method (hereinafter referred to as the CZ method).

[0004] When using the CZ method to manufacture single crystal ingots, a growth furnace filled with high-purity polycrystalline silicon (poly-Si) can be heated at high temperature to melt the raw materials, a seed crystal can be introduced into the silicon (Si) melt from above, and then the silicon single crystal can be grown and pulled upward.

[0005] To increase the productivity of silicon single crystal ingots, the length of the basic section is often increased. As the length of the silicon single crystal ingot increases, the initial charge also increases. However, in related art, because the water cooling tube is fixed to the chamber, the space in the upper hot zone, especially the space in the heat barrier, is limited. Therefore, when loading polycrystalline silicon chunks into the crucible, the amount of polycrystalline silicon that can be loaded is limited, which restricts the initial charge and makes it difficult to improve productivity.

[0006] Furthermore, to control crystal quality, the cooling conditions of the silicon single crystal ingot need to be adjusted. The cooling rate of the silicon single crystal ingot can be controlled by adjusting the position of the water cooling tube relative to the solid-liquid interface. Adjusting the position of the water cooling tube can be done by using relatively short or long tubes, allowing for arbitrary adjustment of the tube's position.

[0007] However, the method of adjusting the length of the water-cooling tube has a disadvantage: it requires multiple water-cooling tubes of varying lengths. Furthermore, using water-cooling tubes of varying lengths makes it difficult to replace them when process conditions change. When replacing water-cooling tubes or installing auxiliary equipment, equipment downtime occurs during the replacement or installation process, reducing productivity.

[0008] To solve these problems, Korean Patent Laid-Open No. 10-2021-0089395 (published on July 16, 2021) discloses a technology in which, in addition to a fixed water-cooling pipe, a movable water-cooling pipe is provided to increase the total length of the water-cooling pipe.

[0009] However, it is difficult to accurately control and measure the moving length of the movable water-cooling pipe. Summary of the Invention Technical issues

[0010] The present invention is directed to solving the above-mentioned problems. One aspect of the present invention is to provide an apparatus and method for growing a silicon single crystal ingot, which are capable of accurately measuring the length of a movable water-cooling pipe. Technical Solution

[0011] One embodiment provides a silicon single crystal ingot growth device, the device comprising: a chamber; a crucible disposed in the chamber and configured to accommodate a silicon (Si) melt; a heater disposed in at least one of an area around the crucible or an area below the crucible; a first water-cooling pipe fixedly disposed in an upper area of ​​the chamber and disposed around a silicon single crystal ingot grown from the silicon melt and pulled upward; a thermal insulation member disposed in an area around the crucible; a heat shield disposed above the crucible and the heat shield; a lifting member configured to raise and lower the heat shield; a second water-cooling pipe connected to the lifting member to move up and down in an up-down direction and disposed above the heat shield; and a current measuring unit configured to measure current between the lifting member and the heat shield.

[0012] The lifting member may include: a fixing pin fixed to the upper portion of the heat barrier; an extension plate fixed to the upper portion of the heat barrier by the fixing pin and extending from the fixing pin in a horizontal direction; a tube extending upward from the extension plate to the outside of the chamber; and a main body extending from the tube in an inward direction of the chamber, and the second water-cooling tube may extend downward from the inner side of the main body.

[0013] The pipe and the thermal insulation member may include a conductive material, and the current measuring unit may further include a wire interconnecting the conductive materials of the pipe and the thermal insulation member, and an ammeter provided on the wire.

[0014] A first height of the lower end of the first water-cooling pipe may be equal to or lower than a second height of the upper end of the second water-cooling pipe, and may be higher than a third height of the lower end of the second water-cooling pipe.

[0015] The first water-cooling tube and the second water-cooling tube may each have a shape surrounding the periphery of the upwardly pulled silicon single crystal ingot, and a width of the second water-cooling tube in a transverse direction may be greater than a width of the first water-cooling tube in the transverse direction.

[0016] When the lifting member moves to the lowest position, the lower end of the heat barrier may come into contact with the upper end of the heat insulating member.

[0017] The extension plate may include a first portion and a third portion disposed parallel to each other and a second portion interconnecting the first portion and the third portion, and the first portion may include a first hole formed therein to allow the fixing pin to be inserted therein.

[0018] When the first portion of the extension plate is in full contact with the upper end of the heat barrier, a certain amount of current flows, thereby determining that the first portion is located on the top end of the heat barrier.

[0019] The third portion of the extension plate may include a second hole formed therein to allow the tube to be inserted therein.

[0020] The extension plate and the tube may be electrically conductive, the first portion of the extension plate may contact the upper end of the thermal barrier, and the outer wall of the tube may contact the inner wall of the second hole in the third portion of the extension plate.

[0021] The tube, retaining pin, and extension plate may each be formed of stainless steel or molybdenum.

[0022] Another embodiment provides a method for growing a silicon single crystal ingot, the method comprising: in an upper area of ​​a chamber, lowering a heat barrier to an area above a crucible containing a silicon melt using a lifting member; bringing the heat barrier into contact with an upper portion of a thermal insulation member disposed in an area outside the crucible; measuring a first current magnitude flowing from the lifting member through the heat barrier to the thermal insulation member; and measuring a second current magnitude caused by further lowering of the lifting member, thereby measuring the height of the lifting member after further lowering based on the difference between the second current magnitude and the first current magnitude.

[0023] The method may include immersing a seed crystal in the silicon melt to grow a silicon single crystal ingot after measuring a magnitude of a second current flowing from the lifting member to the thermal insulation member via the heat barrier.

[0024] When the resistivity of the lifting member is represented by ρ, the cross-sectional area of ​​the lifting member in the horizontal direction is represented by S, the first current magnitude is represented by I1, the second current magnitude is represented by I2, and the voltage applied to the current flowing from the lifting member to the thermal insulation member via the thermal barrier is represented by V, the moving distance L of the lifting member from measuring the first current magnitude to measuring the second current magnitude can be calculated using the following equation 1: <Equation 1> ΔL = (S / ρ) × (V / (I2-I1)).

[0025] In the silicon single crystal ingot growth method, based on the calculated movement distance L of the lifting component in the up and down directions, the length change of the second water-cooling tube can be calculated, and the total length of the first water-cooling tube and the second water-cooling tube in the vertical direction can be obtained, wherein the total length of the first water-cooling tube and the second water-cooling tube in the vertical direction can be the distance from the upper end of the first water-cooling tube to the lower end of the second water-cooling tube. Beneficial effects

[0026] According to the above-described silicon single crystal ingot growth apparatus and method, the total length of the water-cooling tubes can be precisely controlled by providing a movable second water-cooling tube in addition to the fixed first water-cooling tube. The tube movement distance of the lifting member is calculated based on the change in current magnitude as the lifting member moves, and the movement distance of the second water-cooling tube is determined based on this calculation. As a result, the section where the silicon single crystal ingot begins cooling can be pre-adjusted when it passes the vertical height at which the silicon single crystal ingot and the water-cooling tubes overlap horizontally. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 is a diagram showing an apparatus for growing a silicon single crystal ingot according to one embodiment of the present disclosure.

[0028] Figure 2 Detailed display Figure 1 Figure 1 shows the lifting components of the vehicle.

[0029] Figure 3 Detailed display Figure 2 FIG. 1 is a diagram showing operation of the first portion of the extension plate and the first stopper of the fixing pin of the lifting member.

[0030] 4A to 4C show Figure 2 The lifting components in Figure 1 A diagram showing movement in the upper area of ​​a chamber of a silicon single crystal ingot growth apparatus.

[0031] Figure 5 Shows the use Figure 1 A method for growing a silicon single crystal ingot using a silicon single crystal ingot growing device.

[0032] Figure 6 6a and 6b are graphs showing the measurement of current according to the movement of the tube. DETAILED DESCRIPTION

[0033] The present disclosure will now be described more fully with reference to the accompanying drawings, in which various embodiments are shown.

[0034] These examples may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of this disclosure to those skilled in the art.

[0035] Furthermore, relational terms such as "first," "second," "upper," and "lower" are used solely to distinguish one subject or element from another and do not necessarily require or relate to any physical or logical relationship or order between these subjects or elements.

[0036] Figure 1 is a diagram showing an apparatus for growing a silicon single crystal ingot according to one embodiment of the present disclosure.

[0037] As shown in the figure, the silicon single crystal ingot growth equipment 1000 according to the embodiment of the present disclosure includes: a chamber 100, which includes a space defined therein to grow a silicon single crystal ingot from a silicon (Si) melt; an inner quartz crucible 200 and an outer graphite crucible 250 configured to accommodate the silicon (Si) melt; a lateral heater 400 and a bottom heater (not shown), which are configured to heat the inner quartz crucible 200 and the outer graphite crucible 250; a thermal insulation member 500, which is arranged outside the lateral heater 400 in the area around the quartz crucible 200 and the graphite crucible 250; a heat barrier 600, which is arranged above the quartz crucible 200 and the graphite crucible 250 to block heat from the lateral heater 400 toward the silicon single crystal ingot; and a lower support member 300, which is configured to rotate the graphite crucible 250 and move the graphite crucible 250 up and down.

[0038] In addition, the silicon single crystal ingot growing apparatus 1000 may include: a first water-cooling tube 700 fixed at an upper position within the chamber 100 and arranged around the silicon single crystal ingot grown from the silicon melt and pulled upward; a second water-cooling tube 750 arranged below the heat barrier 600; and a current measuring unit 900 configured to measure the current between the heat insulating member 500 and the lifting member 800 described later.

[0039] The silicon single crystal ingot growing apparatus 1000 may further include an elevating member 800 configured to move the heat barrier 600 up and down, and the second water-cooling pipe 750 may be provided at a portion of the elevating member 800 .

[0040] Figure 2 Detailed display Figure 1 Figure 1 shows the lifting components of the vehicle.

[0041] As shown in the figure, the lifting member 800 may include a fixing pin 810 fixed to the upper portion of the heat barrier 600, an extension plate 820 fixed to the upper portion of the heat barrier 600 by the fixing pin 810 and extending horizontally from the fixing pin 810, and a pipe 830 extending upward from the extension plate 820 to the outside of the chamber 100. For example, a portion of the fixing pin 810 coupled to the upper portion of the heat barrier 600 may have a bolt shape, and the bolt may be fastened to a portion of the heat barrier 60 by rotation.

[0042] The fixing pin 810 may be considered as a part of the thermal barrier 600 , and the combination of the extension plate 820 and the tube 830 may be referred to as a lifting member 800 .

[0043] The heat barrier 600 may include a through hole formed at the center thereof, and the silicon single crystal ingot may be pulled upward through the through hole. The fixing pins 810 may be fixed at at least two relative positions on the upper portion of the heat barrier 600 .

[0044] The thermal barrier 600 can be provided as a unitary structure. According to its function or operation, the thermal barrier 600 can be divided into a base portion 610 provided at the upper end of the thermal insulation member 500, a shielding portion 630 provided above the silicon melt, and a connecting portion 620 interconnecting the base portion and the shielding portion. In this case, the fixing pins 810 can be fixed to the base portion 610 of the thermal barrier 600.

[0045] Extension plate 820 may be provided with steps. For example, as shown in the figure, extension plate 820 may include a first portion 821, a second portion 822, and a third portion 823. First portion 821 and third portion 823 may extend in a first direction, such as a horizontal direction, and second portion 822 may extend in a second direction intersecting the first direction, such as a vertical direction, to interconnect first portion 821 and third portion 823. In this case, the vertical direction may be the up-down direction, along which the silicon single crystal ingot is pulled upward.

[0046] Furthermore, the lifting member 800 may further include a body 850 extending from the tube 830 toward the first water-cooling tube 700, ie, extending inwardly of the chamber 100. The body 850 may be integrally formed with the tube 830 so as to move up and down together with the tube 830.

[0047] As described above, the second water-cooling pipe 750 may be provided at a portion of the elevating member 800. Figure 2 , the second water-cooling pipe 750 may extend downward from the inner side of the body 850 , ie, toward the crucibles 200 and 250 .

[0048] Figure 3 Detailed display Figure 2 FIG. 1 is a diagram showing operation of the first portion of the extension plate and the first stopper of the fixing pin of the lifting member.

[0049] A first hole 821a may be formed in the first portion 821, and a first stopper 811 may be formed at an upper portion of the fixing pin 810. The fixing pin 810 may be inserted into the first hole 821a, and movement of the extension plate 820 may be limited by the action of the first stopper 811.

[0050] 4A to 4C show Figure 2 The lifting components in Figure 1 FIG1 is a diagram showing the movement of the second water-cooling pipe in the upper region of the chamber of the silicon single crystal ingot growing apparatus, from which it can be recognized that the second water-cooling pipe moves according to the movement of the lifting member.

[0051] The pipe 830 of the elevating member 800 may move in the up and down directions to raise and lower the heat barrier 600. In this case, the pipe 830 may move between the inside and outside of the chamber 100 through a hole formed in the upper portion of the chamber 100.

[0052] 4A , as the tube 830 of the elevating member 800 descends, the extension plate 820 , the fixing pin 810 , and the heat barrier 600 also gradually descend. In FIG. 4A , the heat barrier 600 may be spaced apart from the upper end of the insulation member 500 .

[0053] In this case, although not shown, a second hole (not shown) may be formed in the third portion 823 of the extension plate 820 , and the tube 830 may move in the up and down directions through the second hole in the third portion 823 of the extension plate.

[0054] The first portion 821 of the extension plate 820 is supported by the first stopper 811 of the fixing pin 810 coupled to the heat shield 600. In addition, the second region 832 of the tube 830 may be in a state of being inserted into the second hole formed in the third portion 823 of the extension plate 820. In this case, the third portion 823 of the extension plate 820 may be supported by the second stopper 835 provided at the tube 830.

[0055] The tube 830 may be provided with a second stopper 835 and a body 850. The width of the second stopper 835 provided at the tube 830 may be greater than the diameter of the second hole formed in the third portion 823 of the extension plate 820. Therefore, when the tube 830 moves up and down, the second stopper 835 can prevent the tube 830 from being completely separated upward from the extension plate 820.

[0056] The tube 830 and the extension plate 820 may be detachably coupled to each other. During the movement of the elevating member 800, the tube 830 and the extension plate 820 may remain coupled due to the action of the second stopper 835.

[0057] Subsequently, as shown in Figure 4B, when the thermal barrier 600 no longer descends, for example, due to contact with the upper end of the above-mentioned insulation member 500, the fixing pin 810 can stop descending, while the extension plate 820 and the tube 830 can continue to descend, and the main body 850 and the second water-cooling tube 750 can also descend together.

[0058] 4C , as the extension plate 820 further descends, the first portion 821 of the extension plate 820 may contact the thermal barrier 600, and the tube 830 may further descend. In this case, the main body 850 and the second water-cooling tube 750 connected to the tube 830 may also descend together with the tube 830.

[0059] In Figures 4A to 4C , the outer wall of tube 830 may contact the inner wall of the second hole in third portion 823 of extension plate 820. That is, extension plate 820 and tube 830 may be electrically conductive, as may insulation member 500, heat shield 600, and fixing pin 810. The electrically conductive material may be, for example, stainless steel or molybdenum.

[0060] Therefore, as tube 830 further descends from the state shown in FIG4B where first portion 821 of extension plate 820 is in contact with thermal barrier 600 to the state shown in FIG4C , current can flow from tube 830 through extension plate 820, thermal barrier 600, and thermal insulation member 500. Furthermore, as shown in FIG4B and FIG4C , the length of the current path shortens as tube 830 descends. Therefore, as will be described later, the magnitude of the current can change according to Ohm's law, and the distance traveled by tube 830 can be calculated based on the change in current magnitude. Furthermore, since the distance traveled by tube 830 is equal to the distance traveled by main body 850 and second water-cooling tube 750, the distance traveled by second water-cooling tube 750 can be calculated. By summing the lengths of first water-cooling tube 700 and second water-cooling tube 750, the total length of first water-cooling tube 700 and second water-cooling tube 750, located around the region where the silicon single crystal ingot is pulled upward, can be calculated and controlled.

[0061] The above-mentioned current measuring unit 900 configured to measure current and a change in the magnitude of current may include an ammeter 910 connected to the pipe 830 made of a conductive material and the thermal insulation member 500 via a wire 920 .

[0062] In this embodiment, the fixed first water-cooling pipe 700 may be disposed above the movable second water-cooling pipe 750. In detail, as Figure 1 As shown, a first height h1 of the lower end of the first water-cooling pipe 700 may be equal to or lower than a second height h2 of the upper end of the second water-cooling pipe 750 , and may be higher than a third height h3 of the lower end of the second water-cooling pipe 750 .

[0063] In addition, a distance d from a height h0 of the upper end of the first water-cooling pipe 700 to a third height h3 of the lower end of the second water-cooling pipe 750 may correspond to the total length of the first and second water-cooling pipes 700 and 750 .

[0064] Furthermore, if the first and second water-cooling pipes 700 and 750 overlap each other in a vertical direction, damage may occur due to collision between the first and second water-cooling pipes 700 and 750 when the movable second water-cooling pipe 750 moves.

[0065] Therefore, the second water-cooling pipe 750 can be located further outward than the first water-cooling pipe 700. Figure 2As shown, the first water-cooling tube 700 and the second water-cooling tube 750 may each have a shape surrounding the periphery of the upwardly pulled silicon single crystal ingot, and the width w2 of the second water-cooling tube 750 in the lateral direction may be greater than the width w1 of the first water-cooling tube 700 in the lateral direction.

[0066] Figure 5 Shows the use Figure 1 The invention relates to a method for growing a silicon single crystal ingot by using a silicon single crystal ingot growing apparatus in a silicon single crystal ingot growing apparatus. Specifically, the method relates to improving the quality of the silicon single crystal ingot by determining the length of a water cooling tube and controlling the cooling of the silicon single crystal ingot being pulled upward.

[0067] First, prepare Figure 1 The silicon single crystal ingot growing apparatus ( S100 ) is shown. In this step, the heat barrier 600 , the lifting member 800 , and the second water-cooling pipe 750 may not yet be disposed in the chamber 100 .

[0068] Figure 1 The various elements shown, such as the transverse heater 400 and the thermal insulation member 500, may be provided in the chamber 100. In this case, the thermal insulation member 500 may have a multi-layer stacked structure.

[0069] The heat insulating member 500 is formed in a multi-layer structure, and the heat barrier 600 is provided separately.

[0070] Subsequently, polycrystalline silicon is injected into the crucible, and the lateral heater 400 is operated to melt the polycrystalline silicon, thereby forming a silicon (Si) melt ( S110 ).

[0071] Subsequently, before the silicon single crystal ingot is grown, the heat insulation barrier 600 is lowered to the area above the crucibles 200 and 250 using the lifting member 800 .

[0072] In this case, as shown in FIGS. 4A to 4C , the tube 830 of the elevating member 800 descends, and thus, the extending plate 820 , the fixing pin 810 , and the heat barrier 600 also gradually descend ( S120 ).

[0073] As described above, since the outer wall of the tube 830 contacts the inner wall of the second hole in the third portion 823 of the extension plate 820 , the extension plate 820 may be electrically connected to the tube 830 .

[0074] Subsequently, when the state shown in FIG. 4B is reached, the heat barrier 600 may be in contact with and electrically connected to the upper end of the lower insulation member 500 ( S130 ).

[0075] 4C , the extension plate 820 can contact and electrically connect with the heat shield 600. Therefore, in this case, the current can be measured by the ammeter 920 connected to the tube 830 and the insulation member 500 via the wire 910.

[0076] Subsequently, as the tube 830 continues to descend, the change in current magnitude can be measured by the ammeter 920 (S140). Based on the change in current magnitude, the length of the second water-cooling tube can be calculated, and then the total length of the first water-cooling tube and the second water-cooling tube can be calculated (S150). Subsequently, when the total length of the first water-cooling tube and the second water-cooling tube reaches the target design value, the seed crystal can be lowered, and the process of growing and pulling the silicon single crystal upward can be carried out (S160).

[0077] Hereinafter, the process of calculating the length of the second water-cooling pipe will be described in detail.

[0078] Figure 6 6a and 6b are diagrams showing the measurement of current according to the movement of the tube. Figure 6 6a and 6b describe a process of measuring the current according to the tube movement and obtaining the tube movement length based on the measured current.

[0079] exist Figure 6 In a, the heat shield 600 contacts the upper end of the lower heat insulating member (not shown), the first portion 821 of the extension plate 820 contacts the upper end of the heat shield 600, and the second stopper 835 of the tube 830 contacts and supports the third portion 823 of the extension plate 820. Figure 6 In the state shown in a, the current measured by the ammeter 920 is a first value I1.

[0080] Then, if Figure 6 As shown in FIG. 2 b, when the tube 830 is further lowered, the second stopper 835 of the tube 830 can be separated from the third portion 823 of the extension plate 820 in a state where the heat shield 600 contacts the upper end of the lower heat insulating member (not shown) and the first portion 821 of the extension plate 820 contacts the upper end of the heat shield 600. In this case, since the outer wall of the tube 830 contacts the inner wall of the second through hole in the third portion 823 of the extension plate 820, the current can continue to flow, as shown by the arrow. Figure 6 In the state shown in b, the current measured by the ammeter 920 is the second value I2.

[0081] The currents of different magnitudes are not necessarily limited to the tube 830 being located in the Figure 6 However, currents having different magnitudes can be measured as long as the current flows through the tube 830 and the tube 830 is located at different vertical levels.

[0082] According to Ohm's law, when a voltage V is applied to a wire having a resistance R, the magnitude I of the current flowing through the wire can be obtained as follows.

[0083] <Calculation formula 1>

[0084] I=V / R

[0085] Furthermore, the resistance R of a wire having a resistivity p, a cross-sectional area S, and a length L can be obtained as follows.

[0086] <Calculation 2>

[0087] R=ρ × (L / S)

[0088] According to the above calculation formula, the length L of the wire can be obtained as follows.

[0089] <Calculation 3>

[0090] L=(S / ρ) × R

[0091] In this case, the current path through the tube is Figure 6 (a) The state shown and Figure 6 (b) changes between the states shown, and therefore, the magnitude of the current changes from the first value I1 to the second value I2. The change in the magnitude of the current ΔI is obtained as follows.

[0092] ΔI=I2-I1

[0093] Furthermore, as described above, tube 830 is Figure 6 The state shown in (a) moves to Figure 6 The distance ΔL in the state shown in (b) can be obtained as follows.

[0094] That is, according to Ohm's law above,

[0095] R=V / ΔI=V / (I2-I1). The above calculation formula 3 can be rearranged as follows.

[0096] L=(S / ρ) × R=(S / ρ) × (V / (I2-I1))

[0097] That is, the distance L that the tube moves can be obtained by the following Equation 1.

[0098] <Equation 1>

[0099] L=(S / ρ) × (V / (I2-I1))

[0100] Here, L represents Figure 6 (a) The state shown and Figure 6(b) shows the difference in the current path between the states shown, that is, the moving distance of the tube 830 of the lifting member 800, S represents the cross-sectional area of ​​the tube 830 of the lifting member 800, ρ represents the resistivity of the tube 830 of the lifting member 800, and V represents the voltage applied to the current flowing from the lifting member 830 to the thermal insulation member 500 via the thermal barrier 600.

[0101] exist Figure 1 In the silicon single crystal ingot growing apparatus 1000 in FIG. 1 , based on the change in the magnitude of the current detected by the ammeter 920 (ΔI=I 2 −I 1 ), the moving distance L of the tube 830 can be obtained using Equation 1.

[0102] Once the tube 830 of the lifting member 800 is obtained through the above process, Figure 6 (a) The state shown and Figure 6 (b) The moving distance L between the states shown in FIG. 4 and FIG. 5 can be used to determine the moving distance of the second water-cooling tube 750. Therefore, the total length of the first water-cooling tube 700 and the second water-cooling tube 750 can also be determined. In this case, the "total length" can be the distance d from the height h0 of the upper end of the first water-cooling tube 700 to the third height h3 of the lower end of the second water-cooling tube 750, and the upwardly pulled silicon single crystal ingot can begin to cool within the range of the above distance d. Therefore, after the silicon single crystal ingot is grown, the operator can determine the required water-cooling tube length and can move the tube by the moving distance L so that the above distance d corresponds to the length of the water-cooling tube.

[0103] Furthermore, after the total length of the water-cooling pipe is set through the above process, a seed crystal may be immersed in a silicon (Si) melt to grow a silicon single crystal ingot.

[0104] According to the above-described silicon single crystal ingot growth apparatus and method, the total length of the water-cooling tubes can be precisely controlled by providing a movable second water-cooling tube in addition to the fixed first water-cooling tube. The tube movement distance of the lifting member is calculated based on the change in current magnitude as the lifting member moves, and the movement distance of the second water-cooling tube is determined based on this calculation. As a result, the cooling section of the silicon single crystal ingot can be pre-adjusted as it passes through the vertical height at which the silicon single crystal ingot and the water-cooling tubes overlap horizontally.

[0105] Although the embodiments of the present disclosure have been described in more detail with reference to the accompanying drawings, the present disclosure is not necessarily limited to these embodiments, and various modifications and implementations may be made without departing from the technical spirit of the present disclosure.

[0106] Therefore, the embodiments disclosed herein are not intended to limit the technical spirit of the present disclosure, but rather to describe the technical spirit, and the scope of the technical spirit of the present disclosure is not limited by these embodiments. Therefore, it should be understood that the above embodiments are illustrative in all aspects and not restrictive. The scope of protection of the present disclosure should be interpreted according to the scope of the claims, and all technical ideas within the scope equivalent to them should be interpreted as included within the scope of the present disclosure. Industrial Applicability

[0107] The above-mentioned silicon single crystal ingot growing apparatus and method can improve the quality of the grown and upwardly pulled silicon single crystal ingot by precisely controlling the length of the water-cooling tube.

Claims

1. An apparatus for growing a silicon single crystal ingot, the apparatus comprising: chamber; a crucible disposed within the chamber, the crucible configured to contain a silicon (Si) melt; a heater disposed in at least one of an area around the crucible or an area below the crucible; a first water-cooling tube fixedly disposed in an upper region of the chamber and arranged around a silicon single crystal ingot grown from the silicon melt and pulled upward; a thermal insulation member disposed in a region surrounding the crucible; a thermal barrier disposed above the crucible and the insulating member; a lifting member configured to raise and lower the thermal barrier; a second water-cooling pipe connected to the elevating member to move up and down in an up-and-down direction and disposed above the heat barrier; and The current measuring unit is configured to measure a current between the lifting member and the heat insulating member.

2. The device according to claim 1, wherein The lifting components include: a securing pin secured to an upper portion of the thermal barrier; an extension plate fixed to the upper portion of the heat barrier by a fixing pin and extending from the fixing pin in a horizontal direction; a tube extending upwardly from the extension plate to the exterior of the chamber; and a body extending from the tube in an inward direction of the chamber, and The second water-cooling pipe extends downward from the inner side of the main body.

3. The apparatus of claim 2, wherein: The tube and the insulation comprise electrically conductive material, and The current measuring unit further includes a wire interconnecting the conductive material of the pipe and the heat insulating member and an ammeter arranged on the wire.

4. The apparatus of claim 2, wherein: A first height of the lower end of the first water-cooling pipe is equal to or lower than a second height of the upper end of the second water-cooling pipe, and higher than a third height of the lower end of the second water-cooling pipe.

5. The apparatus of claim 1, wherein: The first water-cooling tube and the second water-cooling tube each have a shape surrounding the outer periphery of the upwardly drawn silicon single crystal ingot, and The width of the second water-cooling tube in the transverse direction is greater than the width of the first water-cooling tube in the transverse direction.

6. The apparatus of claim 2, wherein: When the lifting member moves to the lowest position, the lower end of the heat barrier contacts the upper end of the heat insulating member.

7. The apparatus of claim 2, wherein: The extension plate includes a first portion and a third portion disposed parallel to each other and a second portion interconnecting the first portion and the third portion, and The first portion includes a first hole formed therein to allow the fixing pin to be inserted therein.

8. The apparatus of claim 7, wherein: The third portion of the extension plate includes a second hole formed therein to allow the tube to be inserted therein.

9. The apparatus of claim 8, wherein: The extension plates and tubes are conductive, wherein the first portion of the extension plate contacts the upper end of the thermal barrier, and The outer wall of the tube contacts the inner wall of the second hole in the third portion of the extension plate.

10. The apparatus of claim 2, wherein: The tube, retaining pin, and extension plate are each formed of stainless steel or molybdenum.

11. A method for growing a silicon single crystal ingot, the method comprising the following steps: lowering a heat barrier in an upper region of the chamber to a region above the crucible containing the silicon melt using a lifting member; placing the thermal barrier in contact with an upper portion of a thermally insulating member disposed in an outer region of the crucible; measuring a magnitude of a first current flowing from the lifting member through the thermal barrier to the thermal insulation member; and The second current magnitude caused by the further descent of the lifting member is measured, so that the height of the lifting member after the further descent is measured based on the difference between the second current magnitude and the first current magnitude.

12. The method of claim 11, comprising: After measuring the magnitude of a second current flowing from the elevating member to the thermal insulation member via the heat barrier, the seed crystal is immersed in the silicon melt to grow a silicon single crystal ingot.

13. The method of claim 11, wherein: When the resistivity of the lifting member is represented by ρ, the cross-sectional area of ​​the lifting member in the horizontal direction is represented by S, the first current magnitude is represented by I1, the second current magnitude is represented by I2, and the voltage applied to the current flowing from the lifting member to the thermal insulation member via the thermal barrier is represented by V, the moving distance (L) of the lifting member from measuring the first current magnitude to measuring the second current magnitude is calculated using the following Equation 1: <Equation 1> ΔL=(S / ρ) × (V / (I2-I1)).

14. The method of claim 13, wherein: The first water cooling pipe is provided around the area for pulling the silicon single crystal ingot in the upper area of ​​the chamber. The lifting components include: a securing pin secured to an upper portion of the thermal barrier; an extension plate fixed to the upper portion of the heat barrier by a fixing pin and extending from the fixing pin in a horizontal direction; a tube extending upwardly from the extension plate to the exterior of the chamber; and a body extending from the tube in an inward direction of the chamber, The second water-cooling pipe extends downward from the inner side of the main body. Wherein, the second water-cooling pipe is arranged below the first water-cooling pipe; and The width of the second water-cooling tube in the transverse direction is greater than the width of the first water-cooling tube in the transverse direction.

15. The method of claim 13, wherein: Based on the calculated moving distance (L) of the lifting component in the up and down directions, the length change of the second water-cooling pipe is calculated, and the total length of the first water-cooling pipe and the second water-cooling pipe in the vertical direction is obtained. The total length of the first water-cooling pipe and the second water-cooling pipe in the vertical direction is the distance from the upper end of the first water-cooling pipe to the lower end of the second water-cooling pipe.

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