Pilot frequency combiner and multi-system access platform

Abstract

The invention provides a pilot frequency combiner and a multi-system access platform, the pilot frequency combiner comprises a first substrate waveguide resonant cavity, the first substrate waveguide resonant cavity is provided with at least two input feed line ends, the at least two input feed line ends are used for introducing excitation signals of different information sources, a second substrate waveguide resonant cavity is stacked on the first substrate waveguide resonant cavity, and the second substrate waveguide resonant cavity is used for feeding excitation signals of different information sources. The second substrate waveguide resonant cavity is provided with an output feeder end, and the second substrate waveguide resonant cavity and the first substrate waveguide resonant cavity share a cavity wall; the common cavity wall is provided with at least two through coupling holes, and the coupling holes are communicated with the first substrate waveguide resonant cavity and the second substrate waveguide resonant cavity, so that excitation signals input by the at least two input feeder line ends are transmitted to the second substrate waveguide resonant cavity, and are output to an external antenna radiation end after being combined by the output feeder line end. According to the pilot frequency combiner provided by the invention, the isolation degree of multi-band signals is relatively good, the frequency expansibility is also good, and the design flexibility is relatively high.

Description

Technical Field

[0001] The present application relates to communication antenna technology, and in particular to an inter-frequency combiner and a multi-system access platform. Background Art

[0002] Multi-system point of interface (POI) platforms play a crucial role in modern communications infrastructure. Their core function is to efficiently combine and distribute signals from different frequency bands using frequency combiners, avoiding interference between multiple systems while ensuring high-quality signal transmission.

[0003] However, in the current multi-system access platform, the frequency combiners use microstrip line combiners or cavity combiners. Microstrip line combiners are prone to parasitic coupling when combining multiple frequency bands, resulting in reduced isolation, affecting the use effect; cavity combiners have poor adaptability to multi-band expansion, and the addition of new frequency bands requires redesigning the cavity, which is costly and has a long production cycle. Summary of the Invention

[0004] The present application provides a heterogeneous frequency combiner and a multi-system access platform, which are used to solve the technical problem in the related art that the isolation degree is not high when the multi-system access platform combines multiple frequency bands.

[0005] In one aspect, the present application provides an inter-frequency combiner, comprising:

[0006] A first substrate waveguide resonant cavity has at least two input feeder terminals, the input feeder terminals being used to introduce excitation signals from different sources, and positions of the at least two input feeder terminals being configured to correspond to different electromagnetic field resonance modes of the first substrate waveguide resonant cavity;

[0007] a second substrate waveguide resonant cavity, stacked on the first substrate waveguide resonant cavity, the second substrate waveguide resonant cavity having an output feeder end, and the second substrate waveguide resonant cavity and the first substrate waveguide resonant cavity having a common cavity wall;

[0008] In which, at least two penetrating coupling openings are provided on the common cavity wall, and the coupling openings connect the first substrate waveguide resonant cavity and the second substrate waveguide resonant cavity, so that the excitation signals input from at least two of the input feeder ends are transmitted to the second substrate waveguide resonant cavity, and are combined through the output feeder end and output to the external antenna radiation end.

[0009] In some possible embodiments, the present invention includes a first waveguide component, an intermediate metal layer, and a second waveguide component stacked in sequence, wherein the first waveguide component and the intermediate metal layer together constitute the first substrate waveguide resonant cavity, the second waveguide component and the intermediate metal layer together constitute the second substrate waveguide resonant cavity, and the intermediate metal layer forms the common cavity wall.

[0010] In some possible implementations, the first waveguide assembly includes a first metal layer and a first dielectric layer stacked in sequence, the second waveguide assembly includes a second metal layer and a second dielectric layer stacked in sequence, and the intermediate metal layer is located between the first dielectric layer and the second dielectric layer;

[0011] A plurality of metal through holes are provided on the first dielectric layer and the second dielectric layer, and the plurality of metal through holes on the first dielectric layer and the second dielectric layer are arranged in a ring array. At least two input feeder terminals are provided on the first metal layer, and the output feeder terminal is provided on the second metal layer.

[0012] In some possible implementations, one of the at least two input feeder ends is located at a node point of the first metal layer in the first preset mode and at an antinode point of the first substrate waveguide resonant cavity in the second preset mode; the other input feeder end is located at a node point of the first substrate waveguide resonant cavity in the second preset mode and at an antinode point of the first substrate waveguide resonant cavity in the first preset mode.

[0013] The first preset mode and the second preset mode are mutually orthogonal electromagnetic field resonance modes.

[0014] In some possible implementations, two first perturbation grooves are provided on the first metal layer at intervals, and the two first perturbation grooves extend in the same direction; two second perturbation grooves are provided on the second metal layer at intervals, and the orthographic projections of the two second perturbation grooves on the first metal layer coincide with the first perturbation grooves;

[0015] The first perturbation slot and the second perturbation slot are configured to adjust the resonant frequency of the excitation signal in the first substrate waveguide resonant cavity and the second substrate waveguide resonant cavity.

[0016] In some possible implementations, two first disturbance through holes are provided on the first dielectric layer at intervals, and two second disturbance through holes are provided on the second dielectric layer at intervals, and a line connecting orthographic projections of the first disturbance through holes and the second disturbance through holes on the first metal layer coincides with an axis of the first disturbance slot;

[0017] The first perturbation through hole and the second perturbation through hole are configured to adjust the resonant frequency of the excitation signal in the first substrate waveguide resonant cavity and the second substrate waveguide resonant cavity.

[0018] In some possible implementations, the lengths of the two first perturbation slots are negatively correlated with the resonant frequency, and / or the lengths of the two second perturbation slots are negatively correlated with the resonant frequency;

[0019] The distance between the two first perturbation through holes is positively correlated with the resonant frequency, and / or the distance between the two second perturbation through holes is positively correlated with the resonant frequency.

[0020] In some possible implementations, an orthographic projection of the coupling opening on the first metal layer at least partially overlaps with the input feed line end.

[0021] In some possible implementations, the first substrate waveguide resonant cavity and the second substrate waveguide resonant cavity are rectangular cavities, and the coupling openings have four holes distributed around the common cavity wall.

[0022] On the other hand, the present application provides a multi-system access platform, including:

[0023] At least two antenna radiating ends;

[0024] At least two of the above-mentioned inter-frequency combiners, each of which has an output feeder terminal;

[0025] A bridge, one end of which is connected to at least two of the output feeder ends, and the other end of which is connected to at least two of the antenna radiation ends, so that the antenna radiation ends and the different frequency combiners are connected in a one-to-one correspondence.

[0026] The hetero-frequency combiner and multi-system access platform provided in the present application utilize a stacked arrangement of a first substrate waveguide resonant cavity and a second substrate waveguide resonant cavity in the hetero-frequency combiner, with a coupling opening provided on a common cavity wall to connect the first substrate waveguide resonant cavity and the second substrate waveguide resonant cavity. This avoids parasitic radiation loss caused by connecting two resonant cavities using a connecting feeder or an independent cavity in conventional technology, effectively reduces the occupied size, and makes the overall structure more compact.

[0027] In addition, since at least two of the input feeder ends in the first substrate waveguide resonant cavity are used to introduce excitation signals from different sources, the excitation modes of the excitation signals in the first substrate waveguide resonant cavity are different, and the excitation signals of different excitation modes are orthogonally distributed in space, good physical isolation can be formed in the first substrate waveguide resonant cavity without the need to design additional isolation circuits, thereby effectively reducing the crosstalk ratio between signals. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0029] Figure 1 This is an exploded diagram of the inter-frequency combiner in the embodiment of the present application;

[0030] Figure 2 This is a schematic diagram of the structure of the multi-system access platform in the embodiment of the present application;

[0031] Figure 3 TE in the embodiment of this application 201 The electric field distribution diagram of the first substrate waveguide resonant cavity in the mode;

[0032] Figure 4 TE in the embodiment of this application 102 The electric field distribution diagram of the first substrate waveguide resonant cavity in the mode;

[0033] Figure 5 This is a performance diagram of an inter-frequency combiner of a multi-system access platform in an embodiment of the present application;

[0034] Figure 6 This is a performance diagram of another different frequency combiner of the multi-system access platform in an embodiment of the present application.

[0035] Description of Reference Numerals

[0036] 100, first substrate waveguide resonant cavity; 110, first waveguide assembly; 111, first metal layer; 1111, first perturbation slot; 1112, input feeder terminal; 112, first dielectric layer; 1121, first perturbation through hole;

[0037] 200, second substrate waveguide resonant cavity; 210, second waveguide assembly; 211, second metal layer; 2111, second perturbation slot; 2112, output feeder terminal; 212, second dielectric layer; 2121, second perturbation through hole; 2122, metal through hole array;

[0038] 300, intermediate metal layer; 310, coupling opening;

[0039] 400, antenna radiation end; 500, bridge.

[0040] The above drawings illustrate specific embodiments of the present application, which will be described in more detail below. These drawings and the textual description are not intended to limit the scope of the present application in any way, but rather to illustrate the concepts of the present application to those skilled in the art by reference to specific embodiments. DETAILED DESCRIPTION

[0041] In order to make the purpose, technical solutions and advantages of the present application clearer, the technical solutions in the embodiments of the present application will be described in more detail below in conjunction with the drawings in the preferred embodiments of the present application. In the drawings, the same or similar reference numerals throughout represent the same or similar parts or parts with the same or similar functions. The described embodiments are part of the embodiments of the present application, not all of the embodiments. The embodiments described below with reference to the drawings are exemplary and are intended to be used to explain the present application, and should not be understood as limitations on the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application. The embodiments of the present application are described in detail below in conjunction with the drawings.

[0042] In the description of this application, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to a fixed connection, an indirect connection via an intermediate medium, internal communication between two components, or an interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in this application based on the specific circumstances.

[0043] In the description of this application, it should be understood that the terms "up", "down", "front", "back", "left", "right", etc., indicating directions or positional relationships, are based on the directions or positional relationships shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction. Therefore, they should not be understood as limitations on this application.

[0044] The terms "first," "second," "third," "fourth," and the like in the specification and claims of this application and the accompanying drawings are used to distinguish similar objects and are not necessarily used to describe a particular order or sequential sequence. It should be understood that the terms used in this manner are interchangeable where appropriate, such that the embodiments of the application described herein can, for example, be implemented in an order other than that illustrated or described herein.

[0045] In addition, the terms "comprises" and "having" and any variations thereof are intended to cover a non-exclusive inclusion. For example, a process, method, system, product or apparatus that includes a series of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, product or apparatus.

[0046] As mentioned in the background, multi-system access platforms are widely used in complex scenarios such as subways, airports, and stadiums. They must simultaneously support the access and combining of multiple signal formats, including 2G / 3G / 4G / 5G, WiFi, and private network communications. The core function of a multi-system access platform is to efficiently combine and distribute signals from different frequency bands using a frequency combiner, avoiding interference between multiple systems while ensuring high-quality signal transmission.

[0047] Existing heterodyne combiners generally use traditional cavity combiners or microstrip line combiner solutions. Traditional cavity combiners are based on metal cavity filter structures. Although they have high Q values ​​and low insertion loss characteristics, they are bulky and heavy, and the cavity structure has poor adaptability to multi-band expansion. New frequency bands require redesigning the cavity, resulting in high costs and long cycles. Microstrip line combiners use planar circuit designs, which are small and easy to process, but have low Q values, weak insertion loss and out-of-band suppression performance. Especially at high frequencies, the radiation loss of microstrip lines increases significantly, making it difficult to meet the needs of high-frequency systems such as 5G. In addition, microstrip line combiners are prone to parasitic coupling, which leads to reduced isolation in multi-band combining scenarios.

[0048] Based on the above relevant description, one or more embodiments of the present application provide a hetero-frequency combiner and a multi-system access platform. In the hetero-frequency combiner, a first substrate waveguide resonant cavity and a second substrate waveguide resonant cavity are stacked, and a coupling opening is set on the common cavity wall to connect the first substrate waveguide resonant cavity and the second substrate waveguide resonant cavity, thereby avoiding the parasitic radiation loss caused by the use of a connecting feed line or an independent cavity to connect the two resonant cavities in traditional technology, effectively reducing the occupied size and making the overall structure more compact.

[0049] In addition, since at least two input feeder ends in the first substrate waveguide resonant cavity are used to introduce excitation signals from different sources, the excitation signals of different excitation modes are orthogonally distributed in space, and the excitation signals form good physical isolation in the first substrate waveguide resonant cavity, there is no need to design additional isolation circuits, which effectively reduces the crosstalk ratio between signals.

[0050] In order to make the purpose, technical solutions and advantages of the present application clearer, the technical solutions in the embodiments of the present application will be described in more detail below in conjunction with the drawings in the preferred embodiments of the present application. In the drawings, the same or similar reference numerals throughout represent the same or similar parts or parts with the same or similar functions. The described embodiments are part of the embodiments of the present application, not all of the embodiments. The embodiments described below with reference to the drawings are exemplary and are intended to be used to explain the present application, and should not be understood as limitations on the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0051] like Figure 1 As shown, the heterodyne frequency combiner according to the embodiment of the present application includes a first substrate waveguide resonant cavity 100 and a second substrate waveguide resonant cavity 200 that are stacked.

[0052] The first substrate waveguide resonant cavity 100 has at least two input feeder terminals 1112, which are used to introduce excitation signals from different sources. The positions of the at least two input feeder terminals 1112 are configured to correspond to different electromagnetic field resonance modes of the first substrate waveguide resonant cavity 100. The excitation signals input by the at least two input feeder terminals 1112 have different excitation modes within the first substrate waveguide resonant cavity 100. The second substrate waveguide resonant cavity 200 is stacked on the first substrate waveguide resonant cavity 100. The second substrate waveguide resonant cavity 200 has an output feeder terminal 2112. The second substrate waveguide resonant cavity 200 and the first substrate waveguide resonant cavity 100 share a common cavity wall.

[0053] Among them, at least two coupling openings 310 are provided on the common cavity wall, and the coupling openings 310 connect the first substrate waveguide resonant cavity 100 and the second substrate waveguide resonant cavity 200, so that the excitation signals input by at least two input feeder terminals 1112 are transmitted to the second substrate waveguide resonant cavity 200, and are combined through the output feeder terminal 2112 and output to the external antenna radiation terminal 400.

[0054] As can be seen from the above description, the inter-frequency combiner of the present embodiment utilizes the closed-field characteristics of the substrate integrated waveguide (SIW). Signals of different frequency bands, through different input feeder terminals 1112, excite different electromagnetic modes within the same first substrate waveguide resonant cavity 100. These different excitation modes are spatially orthogonally distributed, naturally providing isolation. Furthermore, the transmission of excitation signals of different high-frequency bands within the same closed cavity using different excitation modes avoids the near-field parasitic coupling issues that can easily arise from the open-field distribution of traditional microstrip structures, achieving a high-isolation design.

[0055] In addition, in the first substrate waveguide resonant cavity 100, by adding an input feed line end 1112 and exciting different modes, the excitation signal of a new frequency band can be added without expanding the physical size of the cavity or redesigning the overall structure. Therefore, it also has good frequency scalability and high design flexibility.

[0056] In some embodiments, the heterodyne frequency combiner includes a first waveguide component 110, an intermediate metal layer 300, and a second waveguide component 210 stacked in sequence. The first waveguide component 110 and the intermediate metal layer 300 together constitute a first substrate waveguide resonant cavity 100, the second waveguide component 210 and the intermediate metal layer 300 together constitute a second substrate waveguide resonant cavity 200, and the intermediate metal layer 300 is a common cavity wall of the first substrate waveguide resonant cavity 100 and the second substrate waveguide resonant cavity 200.

[0057] In this way, the intermediate metal layer 300 actually serves as a common cavity wall for the first waveguide assembly and the second waveguide assembly 210. On the one hand, it can block the near-field electromagnetic leakage between the two substrate waveguide resonant cavities and only allow controllable electromagnetic coupling to occur at the coupling opening 310. On the other hand, the intermediate metal layer 300 is conducive to maintaining the orthogonality of the field distribution of different excitation modes in the first substrate waveguide resonant cavity 100, thereby enhancing the isolation of different excitation signals.

[0058] Specifically, the first waveguide component 110 includes a first metal layer 111 and a first dielectric layer 112 stacked in sequence, and the second waveguide component 210 includes a second metal layer 211 and a second dielectric layer 212 stacked in sequence, and the intermediate metal layer 300 is located between the first dielectric layer 112 and the second dielectric layer 212; an annular metal through-hole array 2122 is provided on the first dielectric layer 112 and the second dielectric layer 212, at least two input feeder terminals 1112 are provided on the first metal layer 111, and an output feeder terminal 2112 is provided on the second metal layer 211.

[0059] In the above embodiment, the first metal layer 111 and the first dielectric layer 112 are stacked in sequence upward in the height direction. The first metal layer 111, the first dielectric layer 112, the metal through-hole array 2122 on the first metal layer 111, and the intermediate metal layer 300 together constitute the first substrate waveguide resonant cavity 100. The second metal layer 211, the second dielectric layer 212, the metal through-hole array 2122 on the second metal layer 211, and the intermediate metal layer 300 together constitute the second substrate waveguide resonant cavity 200. The first substrate waveguide resonant cavity 100 and the second substrate waveguide resonant cavity 200 are coupled to each other via the coupling opening 310 of the intermediate metal layer 300, thereby enabling the transmission of excitation signal energy from the lower layer to the upper layer resonant cavity.

[0060] It should be noted that, in the embodiment of the present application, the metal through hole array 2122 on the first metal layer 111 and the second metal layer 211 is used to construct the closed boundary of the substrate waveguide resonant cavity. The metal through hole array 2122 needs to flexibly design the spacing and diameter of the metal through holes according to the actual usage scenario. The specific design method can refer to the metal through hole array 2122 structure in the substrate waveguide resonant cavity in the related technology, which will not be repeated in the embodiment of the present application.

[0061] Here, the core function of the frequency combiner is implemented by a multi-layer planar substrate rather than a monolithic metal machined cavity. Therefore, by increasing the number of input feeder terminals 1112 and stimulating different modes on the first metal layer 111 corresponding to the first substrate waveguide resonant cavity 100, the excitation signal of a new frequency band can be added. This does not require expanding the physical size of the cavity or redesigning the overall structure, reducing design difficulty and improving production efficiency.

[0062] In addition, corresponding to the excitation signal of the newly added frequency band, the corresponding coupling opening 310 position, shape and size are designed on the intermediate metal layer 300. As long as it can match the excitation mode, the coupling opening 310 can be realized through planar processes such as photolithography and laser drilling, reducing complex mechanical processing procedures and making design modifications more flexible, which is conducive to reducing the design difficulty and production cost cycle of the newly added frequency band.

[0063] like Figure 1 As shown, in the embodiment of the present application, the first dielectric layer 112 and the second dielectric layer 212 can be made of the same material. For example, the first dielectric layer 112 and the second dielectric layer 212 are both made of Rogers RO4003C high-frequency board, Rogers RO5880 high-frequency board, or Rogers RO4350B high-frequency board. However, for different dielectric board materials, the relevant parameters of the device structure (including the through-hole spacing of the metal through-hole array 2122, the size of the coupling opening 310, the impedance matching of the input feeder terminal 1112, etc.) need to be readjusted to meet the operating frequency band and bandwidth requirements required in actual application scenarios. The design of these parameter adjustments can refer to the operating frequency band and bandwidth requirements in the relevant art.

[0064] In the above-described embodiment, the input feeder terminal 1112 and the output feeder terminal 2112 have the same structure, both employing a microstrip-to-coplanar waveguide (CPW) transition feeder port structure. This structure is simple and easy to process and integrate with other planar circuits. In this embodiment, when the fixed microstrip line width of the input feeder terminal 1112 and the output feeder terminal 2112 is 1.58 mm, the impedance matching of the input feeder terminal 1112 and the output feeder terminal 2112 is 50Ω, which can reduce reflections of the transmitted signal.

[0065] Taking the case where there are two input feeder terminals 1112 as an example, Figure 1 The middle input feeder end 1112 includes a first coupling slot arranged on the first metal layer 111 and a first microstrip line connected to the first coupling slot. The first microstrip line is in the direction of the central axis of the first coupling slot. By adjusting the slot depth and width of the first coupling slot and the line width of the first microstrip line, the input feeder end 1112 and the first substrate waveguide resonant cavity 100 are impedance matched.

[0066] Similarly, Figure 1In the embodiment, the output feeder terminal 2112 includes a second coupling slot provided on the second metal layer 211 and a second microstrip line connected to the second coupling slot. The second microstrip line is arranged in the direction of the central axis of the second coupling slot. By adjusting the slot depth and width of the second coupling slot and the line width of the second microstrip line, the output feeder terminal 2112 and the second substrate waveguide resonant cavity 200 are impedance matched. By adjusting the structural parameters of the input feeder terminal 1112 and the output feeder terminal 2112, good energy transmission and weak energy reflection are achieved.

[0067] like Figure 3 and Figure 4 As shown, among the at least two input feed line ends 1112, one input feed line end 1112 is located at a node point of the first metal layer 111 in the first preset mode, and is located at an antinode point of the first substrate waveguide resonant cavity 100 in the second preset mode; the other input feed line end 1112 is located at a node point of the first substrate waveguide resonant cavity 100 in the second preset mode, and is located at an antinode point of the first substrate waveguide resonant cavity 100 in the first preset mode.

[0068] The first preset mode and the second preset mode are orthogonal electromagnetic field resonance modes.

[0069] In the above embodiment, the electromagnetic field in the rectangular SIW resonant cavity is distributed in a standing wave manner, and the first preset mode is TE 201 Mode, the second preset mode is TE 102 model.

[0070] The electric field in the TE mode has fixed antinodes and node points in the first substrate waveguide resonant cavity 100. 201 Taking the TE mode as an example, the electric field has two half-wave cycles in the first direction and no change in the second direction. Its electric field zero point is located at the center line of the second direction. 102 In this mode, the electric field has two half-wave periods in the second direction and no change in the first direction, with the zero point located at the center line of the first direction. The first direction and the second direction are perpendicular to each other.

[0071] Therefore, one input feeder terminal 1112 is located at TE 102 When the electric field zero point of the mode is 102 The mode is almost unexcited; the other input feeder terminal 1112 is located at TE 201 When the electric field zero point of the mode is 201 This design ensures independent energy transmission between the two modes, effectively enhancing the port isolation between the two input feeder terminals 1112 and resolving the signal crosstalk issue in multi-port combiners. It is widely applicable to various scenarios, including 5G multi-band base stations and radar RF front-ends.

[0072] Of course, in the embodiment of the present application, the first preset mode and the second preset mode may also adopt other excitation modes, such as TE 103 and TE 301 TE 203 and TE 302 etc., as long as they are orthogonal electromagnetic field resonance modes.

[0073] like Figure 1 As shown, in the embodiment of the present application, the orthographic projection of the coupling opening 310 on the first metal layer 111 at least partially overlaps with the input feeder terminal 1112 .

[0074] Here, the first substrate waveguide resonant cavity 100 and the second substrate waveguide resonant cavity 200 are rectangular cavities, and there are four coupling openings 310 distributed around the four sides of the common cavity wall.

[0075] For example, the dimensions of the first metal layer 111 and the second metal layer 211 are both 63.5 mm by 63.5 mm. In practice, the dimensions of the first metal layer 111 and the second metal layer 211 depend on the operating frequency of the device. The higher the operating frequency, the smaller the metal surface, and vice versa. Therefore, the dimensions of the first metal layer 111 and the second metal layer 211 need to be adjusted accordingly with the frequency requirements.

[0076] When the excitation signal is transmitted from the input feeder terminal 1112 of the lower layer to the output feeder terminal 2112, there are two transmission paths: the excitation signal resonates from the first substrate waveguide of the lower layer through the coupling opening 310 and then outputs from the second substrate waveguide resonant cavity 200 through the output feeder terminal 2112; and the excitation signal is directly coupled with the coupling opening 310 and outputs from the second substrate waveguide resonant cavity 200 through the output feeder terminal 2112.

[0077] like Figure 5 and Figure 6 As shown, the orthographic projection of the coupling opening 310 on the first metal layer 111 coincides with the input feeder end 1112, that is, the coupling opening 310 is arranged opposite to the input feeder end 1112 in the height direction. Therefore, at a frequency point lower than the resonant frequency, the two transmission paths have similar amplitudes and opposite phases at the output feeder end 2112, and cancel each other out on the left side of each passband to generate two transmission zeros, that is, Figure 5 Points A and B on one of the frequency combiners, Figure 6 At points C and D on another frequency-differential combiner, the coupling openings introduce cross-coupling from the signal source to the upper second substrate waveguide resonant cavity 200, thereby enhancing the steepness of the passband.

[0078] It should be noted that in the embodiment of the present application, a total of four coupling openings 310 are designed, and the four coupling openings 310 are respectively located at the four edges of the intermediate metal layer 300. According to different actual application scenarios, the aperture, position and number of the coupling openings 310 can be flexibly adjusted.

[0079] like Figure 1 As shown, in the embodiment of the present application, two first disturbance grooves 1111 are arranged at intervals on the first metal layer 111, and the two first disturbance grooves 1111 extend in the same direction; two second disturbance grooves 2111 are arranged at intervals on the second metal layer 211, and the orthographic projections of the two second disturbance grooves 2111 on the first metal layer 111 coincide with the first disturbance grooves 1111.

[0080] The first perturbation slot 1111 and the second perturbation slot 2111 are configured to adjust the resonant frequency of the excitation signal in the first substrate waveguide resonant cavity 100 and the second substrate waveguide resonant cavity 200 .

[0081] In the above embodiment, the first perturbation groove 1111 and the second perturbation groove 2111 are both rectangular grooves, and the orthographic projections of the two second perturbation grooves 2111 on the first metal layer 111 coincide with the first perturbation groove 1111, which can ensure that the electromagnetic perturbations of the first substrate waveguide resonant cavity 100 and the second substrate waveguide resonant cavity 200 are synchronously symmetrical, thereby avoiding sudden changes in the excitation mode due to misalignment.

[0082] Generally speaking, the sizes of the first disturbance groove 1111 and the second disturbance groove 2111 can be changed by an etching process, and the lengths of the two first disturbance grooves 1111 are negatively correlated with the resonant frequency, and / or the lengths of the two second disturbance grooves 2111 are negatively correlated with the resonant frequency.

[0083] The longer the lengths of the first disturbance slot 1111 and the second disturbance slot 2111 are, the lower the resonant frequency is.

[0084] As an alternative embodiment, two first disturbance through holes 1121 are spaced apart on the first dielectric layer 112, and two second disturbance through holes 2121 are spaced apart on the second dielectric layer 212. The line connecting the orthographic projections of the first disturbance through hole 1121 and the second disturbance through hole 2121 on the first metal layer 111 coincides with the axis of the first disturbance groove 1111.

[0085] The first perturbation through hole 1121 and the second perturbation through hole 2121 are configured to adjust the resonant frequency of the excitation signal in the first substrate waveguide resonant cavity 100 and the second substrate waveguide resonant cavity 200 .

[0086] The above-mentioned first disturbance through hole 1121 and second disturbance through hole 2121 have the same function as the first disturbance slot 1111 and the second disturbance slot 2111. The first disturbance through hole 1121 and the second disturbance through hole 2121 have the same size, and both are used to disturb the resonant frequency of the energy input from the input feeder end 1112 in the upper and lower SIW resonant cavities.

[0087] The greater the distance between the two spaced-apart first disturbance through holes 1121 , the lower the resonant frequency.

[0088] like Figure 1 and Figure 2 As shown, another embodiment of the present application further provides a multi-system access platform, including:

[0089] At least two antenna radiating ends 400;

[0090] At least two of the inter-frequency combiners in any one of the above embodiments, each of which has an output feeder terminal 2112;

[0091] The bridge 500 has one end connected to at least two output feeder terminals 2112 and the other end connected to at least two antenna radiation terminals 400 , so that the antenna radiation terminals 400 and the different frequency combiners are connected one-to-one.

[0092] In the above embodiment, the two different frequency combiners can share the same waveguide component and the middle metal layer 300, or they can be independently provided. Figure 2 In the vertical direction, two first metal layers 111 are sequentially provided, and two input feeder terminals 1112 are provided on each first metal layer 111. The two input feeder terminals 1112 on one first metal layer 111 are respectively connected to Figure 2 The signal source 1 and the signal source 2 in the other first metal layer 111 are connected to the two input feeder terminals 1112 respectively. Figure 2 The signal sources 3 and 4 in the circuit are shown in FIG. 1 ; a first dielectric layer 112 is provided, and two annular metal through-hole arrays 2122 are provided on the first dielectric layer 112, which separate and form two first substrate waveguide resonant cavities 100; two groups of coupling openings 310 are provided on the middle metal layer 300, and each group of coupling openings 310 has four holes arranged around the metal through-hole array 2122; two annular metal through-hole arrays 2122 are provided on the second dielectric layer 212, which separate and form two second substrate waveguide resonant cavities 200; two second metal layers 211 are provided on the top layer, and an output feeder terminal 2112 is provided on each second metal layer 211, and each output feeder terminal 2112 is connected to the bridge 500 and connected to the external antenna radiation terminal 400 (i.e. Figure 2 Antenna 1 and Antenna 2 in the figure are connected one by one.

[0093] According to the above design, the performance of the first frequency combiner (source 1, source 2) is as follows: Figure 5 shown. Figure 5 In the figure, S11 is the energy reflection parameter from the output feeder, S21 is the energy transfer parameter from one input feeder to the output feeder, S31 is the energy transfer parameter from the other input feeder to the output feeder, and S32 is the energy transfer parameter between the two input feeders. The frequency range of channel 1, corresponding to signal source 1, is 3.7191 GHz to 3.8351 GHz (bandwidth 116 MHz), and the frequency range of channel 2, corresponding to signal source 2, is 4.0561 GHz to 4.1676 GHz (bandwidth 111.5 MHz). The insertion losses of the two channels are 0.48 dB and 0.56 dB, respectively, and the isolation of both channels is better than 20 dB.

[0094] By adjusting the first disturbance slot 1111, the second disturbance slot 2111, the first disturbance through hole 1121 and the second disturbance through hole 2121, the performance of the second frequency combiner (signal source 3, signal source 4) is as follows: Figure 6 As shown in the figure. S11 is the energy reflection parameter at the output feeder end, S21 is the energy transmission parameter from one input feeder end to the output feeder end, S31 is the energy transmission parameter from the other input feeder end to the output feeder end, and S32 is the energy transmission parameter between the two input feeder ends. The frequency range of channel 1 corresponding to signal source 3 is 3.6653 GHz to 3.7797 GHz (bandwidth 114.4 MHz), and the frequency range of channel 2 corresponding to signal source 4 is 4.0215 GHz to 4.1348 GHz (bandwidth 113.3 MHz). The insertion losses of the two channels are 0.59 dB and 0.57 dB, respectively, and the isolation of both channels is better than 20 dB.

[0095] The multi-system access platform of the embodiment of the present application includes the heterodyne frequency combiner in any of the above embodiments, and therefore has all the advantages of the heterodyne frequency combiner.

[0096] Those skilled in the art will readily appreciate other embodiments of the present application after considering the specification and practicing the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the present application that follow the general principles of the present application and include common knowledge or customary techniques in the art not disclosed herein. The description and examples are to be considered as exemplary only, and the true scope and spirit of the present application are indicated by the following claims.

[0097] It should be understood that the present application is not limited to the exact structure described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present application is limited only by the appended claims.

Claims

1. A frequency combiner, characterized in that: include: A first substrate waveguide resonant cavity has at least two input feeder terminals, the input feeder terminals being used to introduce excitation signals from different sources, and positions of the at least two input feeder terminals being configured to correspond to different electromagnetic field resonance modes of the first substrate waveguide resonant cavity; a second substrate waveguide resonant cavity, stacked on the first substrate waveguide resonant cavity, the second substrate waveguide resonant cavity having an output feeder end, and the second substrate waveguide resonant cavity and the first substrate waveguide resonant cavity having a common cavity wall; In which, at least two penetrating coupling openings are provided on the common cavity wall, and the coupling openings connect the first substrate waveguide resonant cavity and the second substrate waveguide resonant cavity, so that the excitation signals input from at least two of the input feeder ends are transmitted to the second substrate waveguide resonant cavity, and are combined through the output feeder end and output to the external antenna radiation end.

2. The frequency combiner according to claim 1, wherein: The invention comprises a first waveguide component, an intermediate metal layer and a second waveguide component stacked in sequence, wherein the first waveguide component and the intermediate metal layer together constitute the first substrate waveguide resonant cavity, the second waveguide component and the intermediate metal layer together constitute the second substrate waveguide resonant cavity, and the intermediate metal layer forms the common cavity wall.

3. The frequency combiner according to claim 2, wherein: The first waveguide assembly includes a first metal layer and a first dielectric layer stacked in sequence, and the second waveguide assembly includes a second metal layer and a second dielectric layer stacked in sequence, with an intermediate metal layer located between the first dielectric layer and the second dielectric layer; A plurality of metal through holes are provided on the first dielectric layer and the second dielectric layer, and the plurality of metal through holes on the first dielectric layer and the second dielectric layer are arranged in a ring array. At least two input feeder terminals are provided on the first metal layer, and the output feeder terminal is provided on the second metal layer.

4. The different-frequency combiner according to claim 3, characterized in that: Among the at least two input feeder ends, one of the input feeder ends is located at a node point of the first metal layer in the first preset mode and at an antinode point of the first substrate waveguide resonant cavity in the second preset mode; the other input feeder end is located at a node point of the first substrate waveguide resonant cavity in the second preset mode and at an antinode point of the first substrate waveguide resonant cavity in the first preset mode; The first preset mode and the second preset mode are mutually orthogonal electromagnetic field resonance modes.

5. The different-frequency combiner according to claim 3, characterized in that: Two first disturbance grooves are provided on the first metal layer at intervals, and the two first disturbance grooves extend in the same direction; two second disturbance grooves are provided on the second metal layer at intervals, and the orthographic projections of the two second disturbance grooves on the first metal layer coincide with the first disturbance grooves; The first perturbation slot and the second perturbation slot are configured to adjust the resonant frequency of the excitation signal in the first substrate waveguide resonant cavity and the second substrate waveguide resonant cavity.

6. The different-frequency combiner according to claim 5, characterized in that: Two first disturbance through holes are provided on the first dielectric layer at intervals, and two second disturbance through holes are provided on the second dielectric layer at intervals, and a line connecting the orthographic projections of the first disturbance through holes and the second disturbance through holes on the first metal layer coincides with the axis of the first disturbance slot; The first perturbation through hole and the second perturbation through hole are configured to adjust the resonant frequency of the excitation signal in the first substrate waveguide resonant cavity and the second substrate waveguide resonant cavity.

7. The different-frequency combiner according to claim 6, characterized in that: The lengths of the two first perturbation slots are inversely proportional to the resonant frequency, and / or the lengths of the two second perturbation slots are inversely proportional to the resonant frequency; The distance between the two first perturbation through holes is proportional to the resonant frequency, and / or the distance between the two second perturbation through holes is positively correlated to the resonant frequency.

8. The different-frequency combiner according to any one of claims 3 to 7, characterized in that: The orthographic projection of the coupling opening on the first metal layer at least partially overlaps with the input feed line end.

9. The different-frequency combiner according to any one of claims 1 to 7, characterized in that: The first substrate waveguide resonant cavity and the second substrate waveguide resonant cavity are rectangular cavities, and the coupling openings have four holes distributed around the common cavity wall.

10. A multi-system access platform, characterized in that: include: At least two antenna radiating ends; At least two heterodyne frequency combiners according to any one of claims 1 to 9, each of the heterodyne frequency combiners having an output feeder terminal; A bridge, one end of which is connected to at least two of the output feeder ends, and the other end of which is connected to at least two of the antenna radiation ends, so that the antenna radiation ends and the different frequency combiners are connected in a one-to-one correspondence.

Images