Substrate processing apparatus

Abstract

The invention provides a substrate processing apparatus capable of effectively controlling the process atmosphere of a substrate processing process using laser light. The substrate processing apparatus includes a support table module configured to support a substrate, a laser irradiation unit configured to irradiate laser light to the substrate, and an atmosphere creation module provided with a through hole through which the laser light passes. The atmosphere creation module may include a first gas supply component configured to supply atmospheric gas to the through hole, and a second gas supply component configured to supply atmospheric gas in a direction of the support table module.

Description

Technical Field

[0001] The present invention relates to a substrate processing device. Background Art

[0002] The present disclosure relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of effectively controlling a process atmosphere in a substrate processing process using laser light.

[0003] In the case of display devices or solar cells, a unit process may be repeated several times, in which a substrate is treated in various ways. Among these unit processes, heating the substrate to a predetermined temperature using light energy in a short time is widely used because it has the advantage of minimizing the side effect of impurities.

[0004] For example, to form an active layer made of polycrystalline silicon film, which has advantages such as high mobility, laser light can be used to crystallize an amorphous silicon film into a polycrystalline silicon film. This technology is also used in various unit processes, such as heat treatment of substrates by laser light irradiation, separation of stacked structures (laser lift-off (LLO)), and dicing.

[0005] As described above, reactive gases such as oxygen present in a process space where a unit process is performed using laser light and a thin film formed on a substrate may react to degrade the thin film or generate impurities, thereby causing product defects.

[0006] To address these limitations, some methods are being explored, in which inert gas is blown into the area where laser light is irradiated to prevent the substrate from being exposed to reactive gases such as oxygen during unit processes such as the crystallization process. This pushes any reactive gases such as oxygen present in this area outward, suppressing film degradation and impurity generation. However, the introduction of inert gas can cause variations in airflow in the space where the substrate processing is performed, disrupting the uniform flow of airflow and causing brightness defects (mura) due to substrate vibration.

[0007] Therefore, it is necessary to more efficiently and stably control the process atmosphere in a substrate processing process in which laser light is irradiated onto substrates that are becoming larger. Summary of the Invention

[0008] The present disclosure provides a substrate processing apparatus capable of stably controlling a process atmosphere during a substrate processing process using laser light.

[0009] The present disclosure also provides a substrate processing apparatus that enables a substrate to be stably supported by maintaining a uniform flow of gas during a substrate processing process.

[0010] In one embodiment, a substrate processing device includes: a support table module configured to support a substrate; a laser irradiation unit configured to irradiate laser light onto the substrate; and an atmosphere creation module provided with a through hole through which the laser light passes, wherein the atmosphere creation module includes: a first gas supply component configured to supply atmospheric gas to the through hole, and a second gas supply component configured to supply atmospheric gas to the support table module.

[0011] The through-hole may include a region where the cross-sectional area gradually decreases downwardly.

[0012] The first gas supply component may include: a first gas supply interface provided in a side wall of the through hole for supplying atmospheric gas to the through hole; a first gas pipeline through which atmospheric gas flows from an external supply; and a first gas connecting channel configured to connect the first gas pipeline to the first gas supply interface to transmit atmospheric gas, wherein the first connecting channel may have a length longer than the shortest distance between the first gas pipeline and the first gas supply interface.

[0013] A protrusion may be provided on the other side wall of the through hole, the side wall being opposite to the one side wall of the through hole.

[0014] The tip of the protrusion may be directed toward the underside of the through hole.

[0015] The second gas supply part may include a porous plate part provided to face the top surface of the support table module and through which the atmospheric gas passes.

[0016] The second gas supply component may include: a second gas pipeline through which atmospheric gas is supplied from the outside; a second gas upper connecting pipe connected to the second gas pipeline to transmit atmospheric gas; a buffer space component connected to the second gas upper connecting pipe and having a cross-sectional area larger than the total cross-sectional area of ​​the second gas upper connecting pipe; and a second gas lower connecting pipe connected to the buffer space component to transmit the atmospheric gas to the porous plate component.

[0017] The atmosphere creating module may further include a protruding buffer part provided between a lower end of the through hole and the porous plate part, the protruding buffer part being provided to protrude further downward than the porous plate part.

[0018] The protruding buffer part may include: a base part extending along an extending direction of the through hole; and sawtooth parts provided at both ends of the base part in the extending direction.

[0019] The serration member may be provided with teeth, each tooth having an inner bevel angle (θi) greater than an outer bevel angle (θo).

[0020] The atmosphere creating module may further include an airflow stabilizing member provided outside the porous plate member, the airflow stabilizing member having a bottom surface provided at the same height as a bottom surface of the porous plate member to form a single plane.

[0021] The atmosphere creating module may include: an oxygen measuring gas interface provided on a bottom surface facing a top surface of the support table module; and an oxygen measuring gas manifold configured to transmit gas introduced through the oxygen measuring gas interface to the oxygen sensor.

[0022] The support stage module may include a pair of first floating supports configured to float and support the substrate and spaced apart from each other to provide a gap at positions facing the through hole.

[0023] The support table module may further include a driving part configured to move the first floating support to adjust the size of the gap.

[0024] The support stage module may further include a second floating support configured to float and support the substrate and provided outside the pair of first floating supports to be separated and spaced apart from the pair of first floating supports.

[0025] The second floating support may be fixed.

[0026] Each of the first floating supports may include: a first floating gas supply hole for injecting a floating gas for floating the substrate; and a vacuum hole configured to provide a negative pressure to remove at least part of the floating gas.

[0027] The second floating support may include: a second floating gas supply hole for injecting a floating gas for floating the substrate; and an exhaust hole through which at least part of the floating gas is exhausted, wherein a floating force of the first floating support may be smaller than a floating force of the second floating support.

[0028] The substrate processing apparatus may further include a measurement assembly configured to detect an optical characteristic of the laser light or a proximity state of the substrate through a gap between the pair of first floating supports.

[0029] The substrate processing apparatus may further include a moving assembly configured to move the measuring assembly in at least one of a vertical direction or a horizontal direction. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The exemplary embodiments may be understood in more detail from the following description taken in conjunction with the accompanying drawings:

[0031] Figure 1 is a schematic diagram of a substrate processing apparatus according to an embodiment;

[0032] Figure 2 is a cross-sectional view of an atmosphere creation module according to an embodiment;

[0033] Figure 3 is a view for explaining the structure of an atmosphere creation module according to an embodiment;

[0034] Figure 4 is a view for explaining a support table module according to an embodiment; and

[0035] Figure 5 1 and 2 are views for explaining a substrate floating state of a support table module according to an embodiment.

[0036] Explanation of Figure Numbers

[0037] 100: Support platform module 110: First floating support member

[0038] 120: Second floating support 130: Measurement component

[0039] 200: Atmosphere Creation Module 210: Shell

[0040] 220: Lower plate 230: Upper plate

[0041] 240: protrusion 250: protrusion buffer part

[0042] 260: Airflow stabilization component 271: Oxygen measurement gas interface

[0043] 280: Second gas supply component 290: First gas supply component

[0044] 300: Laser irradiation unit 400: Chamber

[0045] 410: Inert gas storage unit 420: Floating gas supply unit

[0046] 430: Auxiliary exhaust components 500: Exhaust components DETAILED DESCRIPTION

[0047] Specific embodiments will be described in more detail below with reference to the accompanying drawings. However, the present invention can be embodied in various forms and should not be construed as limited to the embodiments described herein. Rather, these embodiments are provided to make the present invention thorough and complete and to fully convey the scope of the present disclosure to those skilled in the art. In the description, like elements are represented by like reference numerals. In the figures, the dimensions of layers and regions are exaggerated for clarity. Like reference numerals refer to like elements throughout.

[0048] Figure 1 is a schematic diagram of a substrate processing apparatus according to an embodiment, Figure 2 is a cross-sectional view of a modular atmosphere creation module according to an embodiment, Figure 3 is a view for explaining the structure of a module atmosphere creation module according to an embodiment, Figure 4 is a view for explaining a support table module according to an embodiment, Figure 5 1 and 2 are views for explaining a substrate floating state of a support table module according to an embodiment.

[0049] Reference Figures 1 to 5 The substrate processing apparatus according to the embodiment may include a support stage module 100 that supports a substrate S, a laser irradiation unit 300 that irradiates laser light L onto the substrate S, and a module atmosphere creation module 200 having a through hole H through which the laser light L passes. In addition, the module atmosphere creation module 200 may include a first gas supply component that supplies atmospheric gas into the through hole H, and a second gas supply component that supplies atmospheric gas toward the support stage module.

[0050] The substrate processing apparatus may further include a chamber 400 providing an internal space for accommodating at least the support stage module 100 and the modular atmosphere creation module 200, and an exhaust member 500 for exhausting the internal space. The laser irradiation unit 300 may be disposed in the internal space of the chamber 400, or, if necessary, may be disposed outside the chamber 400 to irradiate laser light onto the substrate through a window provided in the chamber 400.

[0051] The substrate processing equipment according to the embodiment can be an equipment that performs various unit processes, which process the substrate by irradiating laser light L onto the substrate S to locally supply energy to the area to be irradiated (hereinafter referred to as the irradiation area), and can be a crystallization equipment that crystallizes an amorphous thin film into a polycrystalline thin film, a heat treatment equipment, a laser lift-off (LLO) equipment that separates a thin film from a stacked structure, a substrate cutting equipment, etc.

[0052] The support stage module 100 can stably support the substrate so that the substrate processing process is uniformly performed during the substrate processing. The support stage module 100 can movably support the substrate in a first direction (eg, horizontal direction) or can support the substrate in a fixed state.

[0053] The laser irradiation unit 300 may be a unit that irradiates laser light L onto the substrate S to supply energy required for a substrate treatment process, and may include a laser generator that generates laser light and various optical systems that control distribution or position of the irradiated laser light.

[0054] The modular atmosphere creation module 200 may be provided to the support table module 100 and the laser irradiation unit 300, and may have a through hole H through which the laser light L passes when irradiated onto the substrate S. The through hole H may be provided on a substrate processing region where the laser light L is irradiated onto the substrate S, and a window (or lens member) 215 may be provided at an upper end of the through hole H to define a limited space that protects the laser irradiation unit 300 and provides atmospheric gas to control the gas in the substrate processing region.

[0055] The atmosphere creation module 200 may be configured to create an inert gas in the substrate processing region irradiated by the laser light L by injecting the inert gas to control the gas so that at least the substrate processing region on the substrate S irradiated by the laser light is not exposed to oxygen and impurities.

[0056] The module atmosphere creation module 200 may be provided with a first gas supply component 290 for supplying atmospheric gas into the through hole H and a second gas supply component 280 for supplying atmospheric gas toward the support table module 100. Therefore, the module atmosphere creation module 200 may simultaneously supply inert atmospheric gas to the through hole H provided at the upper part of the substrate processing area and the top surface of the substrate S or the support table module 100.

[0057] Although the substrate processing chamber 400 has a sealed structure, reactive gases such as oxygen (O2) or impurities may be present therein. O2 may oxidize the thin film formed on the substrate S, while impurities may be fine-particle powder generated during the processing, gaseous process byproducts, or other contaminants. Impurities may degrade the quality of the film or alter its properties, leading to product defects.

[0058] To address this limitation, when the first gas supply component 290 receives an inert atmospheric gas, such as nitrogen (N2), from the inert gas storage component 410 to supply the inert atmospheric gas into the through hole H, since the upper end of the through hole H is blocked by the window 215 and the lower end is open, the inert atmospheric gas can flow downward along the through hole H and then be supplied to the substrate processing area. The inert atmospheric gas supplied to the substrate processing area through the lower end of the through hole H can push reactive gases such as oxygen and / or impurities from the substrate processing area irradiated with laser light, thereby creating an inert gas atmosphere in and around the substrate processing area. Therefore, substrate processing such as crystallization and heat treatment can be performed while preventing oxidation of the substrate S and the thin film (e.g., silicon thin film) formed on the substrate S without being exposed to oxygen and / or impurities. The supplied inert atmospheric gas and the oxygen and / or impurities pushed out by the atmospheric gas, after diffusing into the interior space of the chamber 400, can be exhausted to the outside through the exhaust component 500.

[0059] The atmospheric gas supplied by the first gas supply component 290 through the through-hole H can reach the substrate processing area vertically and be concentrated there, then diffuse outward from the lower end of the through-hole H. When the atmospheric gas reaches the substrate processing area vertically, vortexes or turbulence may occur in the flow of the atmospheric gas. Moreover, as the size of the atmospheric gas creation module 200 increases to accommodate large-area substrates, the distance the atmospheric gas must flow through the space between the bottom surface of the atmospheric gas creation module 200 and the substrate S becomes longer, making it difficult for the atmospheric gas to escape stably.

[0060] In the present disclosure, the second gas supply component 280 can receive atmospheric gas from the inert gas storage component 410 to supply the atmospheric gas toward the top surface of the support stage module 100 or the top surface of the substrate S. Therefore, the atmospheric gas supplied by the second gas supply component 280 can be pushed back through the through hole H to the substrate in the substrate processing area, allowing the atmospheric gas to flow outward more quickly and stably. To this end, the second gas supply component 280 can supply atmospheric gas from the outside (or both sides) with the lower end of the through hole H as the center, toward the top surface of the support stage module 100 or the top surface of the substrate S.

[0061] Atmospheric gas can be supplied to the through hole H by the first gas supply component 290. At the same time, atmospheric gas can be supplied from the outside (or both sides) with the lower end of the through hole H as the center. Therefore, the surrounding oxygen and / or impurities can be doubly blocked and cannot approach the substrate processing area irradiated by the laser light L, so that the substrate processing area and its surroundings can remain in a more stable inactive state.

[0062] Furthermore, the effective cross-sectional area of ​​the second gas supply component 280 for supplying atmospheric gas toward the top surface of the support stage module 100 or the top surface of the substrate S may be larger than the effective cross-sectional area of ​​the lower end of the through hole H for supplying atmospheric gas to the substrate processing region. When the laser light L is irradiated onto the substrate S, the second gas supply component 280 may supply atmospheric gas through the wider effective cross-sectional area, not only at the lower end of the through hole H but also outside (or on both sides) of the through hole H, thereby enabling the substrate S to be stably maintained under the supply pressure of the atmospheric gas without shaking during the substrate processing process.

[0063] The substrate S may be provided to be movable in a first direction, and the through-hole H may extend in a second direction intersecting the first direction.

[0064] As the substrate area increases, it becomes difficult for laser light to illuminate the entire surface of a large substrate. Therefore, if laser light is irradiated onto the substrate in the form of a line extending in a second direction intersecting the first direction while the substrate is moving in the first direction, the laser light can illuminate the entire surface of the substrate. Alternatively, the through-hole H may be formed to extend in the second direction, allowing the laser light L in the form of a line extending in the second direction to pass through the through-hole H undisturbed and reach the substrate S.

[0065] The substrate processing apparatus may further include a substrate transfer unit (not shown) that moves the substrate S in the first direction while fixing and supporting the substrate S, thereby moving the substrate S in the first direction. The substrate transfer unit may include a fixed support portion in the form of a gripper that contacts the substrate to fix and support the substrate, or in the form of a suction, fix, and support portion of the substrate, and a movable body that is movable along a rail extending in the first direction.

[0066] The through hole H may include a region whose cross-sectional area gradually decreases in a downward direction (eg, in a vertical direction). When the first gas supply part 290 supplies the inert atmospheric gas into the through hole H, the atmospheric gas may flow downward along the through hole H and reach the substrate processing region through the lower end of the opening hole.

[0067] Because the flow rate of the atmospheric gas increases as it passes through a region whose cross-sectional area gradually decreases in the downward direction (e.g., vertically), oxygen and impurities can be effectively removed from the substrate processing region even when the atmospheric gas flow rate is the same. The corresponding region can be formed as a curved surface with respect to the downward direction, allowing the inert atmospheric gas to flow naturally along the region whose cross-sectional area gradually decreases in the downward direction without generating eddies or the like.

[0068] The first gas supply component 290 may further include a first gas supply port 291 provided on a sidewall of the through hole H for supplying atmospheric gas into the through hole H, a first gas pipe 292 through which externally supplied atmospheric gas flows, and a first gas connection channel 293 connecting the first gas pipe 292 and the first gas supply port 291 to transmit the atmospheric gas. Here, the length of the first gas connection channel 293 may be greater than the shortest distance between the first gas pipe 292 and the first gas supply port 291.

[0069] The first gas supply interface 291 can be in the form of a plurality of injection holes through which atmospheric gas is injected into the through-hole H, or can be in the form of a slit formed by connecting multiple holes. When the through-hole H extends in a second direction intersecting the first direction of substrate movement, the through-hole H can be a plurality of injection holes arranged along the second direction or a slit extending along the second direction. Because the atmospheric gas must flow downward along the through-hole H to reach the substrate processing area, the first gas supply interface 291 can also be provided in a downward direction to supply the atmospheric gas.

[0070] The first gas pipe 292 may allow the atmospheric gas supplied from the externally provided inert gas storage part 410 to uniformly flow into the atmospheric gas creation module 200 , allowing the atmospheric gas to be uniformly supplied through the through-holes H.

[0071] The first gas conduit 292 may extend parallel to the through hole H extending in the second direction. Since the first gas conduit 292 substrate is configured to span a large area of ​​the substrate in at least the second direction, a significant pressure gradient may be generated between one side of the first gas conduit 292 connected to the inert gas storage component 410 and the opposite side extending therefrom. Since the first gas connecting channel 293 connects the first gas conduit 292 to the first gas supply interface 291 to transmit atmospheric gas, if a pressure gradient occurs along the length of the first gas conduit 292, the pressure of the atmospheric gas injected from the first gas supply interface 291 may also vary depending on the position in the second direction. In addition, as a result, the flow rate or flow rate of the atmospheric gas supplied to the position in the second direction on the substrate processing area may vary. Therefore, the first gas connecting channel 293 is designed to have a length longer than the shortest distance (i.e., the straight-line distance) between the first gas conduit 292 and the first gas supply interface 291, so that the atmospheric gas flows through the first gas connecting channel 293 to offset the effect of the pressure gradient of the first gas conduit 292. If the first gas connection passage 293 is not a straight passage but has at least one curved or folded region, the atmospheric gas may collide with the wall while traveling along the curved or folded path, and as it flows along a longer passage than a straight passage, it may buffer the pressure change between the first gas pipeline 292 and the first gas supply interface 291. The shape of the first gas connection passage 293 does not need to be a straight line, and can be changed to various shapes and configurations through which the inert atmospheric gas flows.

[0072] The protrusion 240 may be provided on another sidewall of the through hole H, which is opposite to a sidewall of the through hole H providing the first gas supply interface 291 .

[0073] When atmospheric gas is injected through the first gas supply port 291 provided on one sidewall of the through-hole H, some of the injected atmospheric gas may move upward after passing through the through-hole H and colliding with the other sidewall of the through-hole H. Because the upwardly moving atmospheric gas does not contribute to maintaining the gas in the substrate processing area below the through-hole H, it is necessary to change the flow direction to move downward. When the atmospheric gas moves along the other sidewall of the through-hole H and collides with the protrusion 240, the flow direction may switch to a downward direction.

[0074] In order for the protrusion 240 to switch the upward flow of the atmospheric gas supplied from the first gas supply interface 291 to a downward direction, the protrusion may be provided at a higher position than the first gas supply interface 291 .

[0075] To more effectively switch the flow of atmospheric gas downward, the tip of the protrusion 240 may be configured to point downward toward the through hole H. When the tip of the protrusion 240 points downward, the flow direction of the atmospheric gas may naturally switch to a downward direction while moving along the bottom surface of the protrusion 240. The bottom surface of the protrusion 240 may be curved so that the atmospheric gas naturally moves along the bottom surface of the protrusion 240.

[0076] The second gas supply part 280 may be disposed to face the top surface of the support table module 100 and may include a porous plate part 285 through which the atmospheric gas passes.

[0077] The second gas supply member 280 may be provided around the lower end of the through hole H to supply atmospheric gas to the top surface of the support table module 100 or the substrate S. Therefore, if a large amount of atmospheric gas is supplied quickly at a very high flow rate, the atmospheric gas supplied by the first gas supply member 290 may interfere with the outwardly diffusing gas flow, causing turbulence. Therefore, rather than using a nozzle method in which a large amount of atmospheric gas is supplied at a high flow rate from the end of the second gas supply member 280, the atmospheric gas may be supplied to the top surface of the support table module 100 or the substrate S using the porous plate member 285.

[0078] The porous plate member 285 may be a plate-like structure including a plurality of holes (apertures), and atmospheric gas may pass between the top and bottom surfaces of the porous plate member 285 through channels defined by connecting the plurality of holes. Atmospheric gas may be uniformly supplied across the entire bottom surface of the porous plate member 285 at a relatively slow rate, slower than the rate of the nozzle. This prevents the atmospheric gas from suddenly interfering with the atmospheric gas supplied from the second gas supply member 280 around the lower end of the through-hole H, allowing the atmospheric gas to flow naturally and escape to the outside, thereby preventing the atmospheric gas from affecting the substrate processing area. Furthermore, because the porous plate member 285 uniformly supplies atmospheric gas across its entire bottom surface, it can stably block ambient oxygen and impurities from approaching the substrate processing area, and can filter particles and the like contained in the atmospheric gas supplied from the inert gas storage section 410, thereby supplying clean atmospheric gas to the substrate processing area.

[0079] The second gas supply component 280 may further include a second gas pipeline 281 through which externally supplied atmospheric gas flows, a second gas upper connecting pipe 282 connected to the second gas pipeline 281 to transmit the atmospheric gas, a buffer space component 283 connected to the second gas upper connecting pipe 282 and having a cross-sectional area larger than the total cross-sectional area of ​​the second gas upper connecting pipe 282, and a second gas lower connecting pipe 284 connected to the buffer space component 283 to transmit the atmospheric gas to the porous plate component 285.

[0080] The second gas pipeline 281 may provide a passage through which the atmospheric gas flows, receives the atmospheric gas through the inert gas storage part 410 provided from the outside, and is evenly distributed throughout the entire area of ​​the module atmosphere creation module 200. In addition, a second gas upper connecting pipe 282 may be connected to the second gas pipeline 281 for transferring the atmospheric gas to the buffer space part 283.

[0081] Since the second gas supply unit 280 must supply atmospheric gas at a uniform speed and pressure over a wider area than a typical nozzle through the porous plate unit 285, the pressure of the atmospheric gas supplied to the porous plate unit 285 may also need to be maintained constant. Since the second gas pipe 281 extending across the entire area of ​​the modular atmosphere creation module 200 generates a pressure gradient in the extending direction, before the atmospheric gas is supplied to the porous plate unit 285, the pressure must be uniformly adjusted over the area corresponding to the planar area of ​​the porous plate unit 285.

[0082] When the buffer space part 283 is connected downstream of the second gas upper connecting pipe 282 and the atmospheric gas flows, even if a pressure gradient occurs according to the position of the second gas pipeline 281, the pressure gradient of the atmospheric gas can be effectively alleviated as the atmospheric gas rapidly diffuses into the buffer space part 283 having a cross-sectional area wider than the total cross-sectional area of ​​the second gas upper connecting pipe 282 (i.e., the cross-sectional area perpendicular to the flow direction).

[0083] The buffer space part 283 may be formed by providing recesses in the bottom surface of the upper plate 230 and / or the top surface of the lower plate 220 facing each other, and then, the recesses may be combined together to contact each other.

[0084] The second gas lower connecting pipe 284 may be connected to the buffer space part 283 to transfer atmospheric gas to the porous plate part 285. A plurality of pipes may be provided to correspond to the plane area of ​​the porous plate part 285 to uniformly distribute the atmospheric gas on the top surface of the porous plate part 285.

[0085] The first gas supply component 290, the second gas pipeline 281, the second gas upper connecting pipe 282, the buffer space section 283, the second gas lower connecting pipe 284, etc. can be provided by various processing processes such as drilling or machining on the upper plate 230 or the lower plate 220, and the upper plate 230 and the lower plate 220 can be firmly fixed by the outer shell 210 and the cover plate 231.

[0086] A positioning groove may be defined on the bottom surface of the lower plate 220 to position the porous plate member 285 in the correct position. When the porous plate member 285 is inserted into the positioning groove, the bottom surface of the lower plate 220 and the bottom surface of the porous plate member 285 may form a flat surface, thereby preventing interference when the atmospheric gas flows along the bottom surface of the modular atmosphere creation module 200.

[0087] The modular atmosphere creation module 200 may further include a protruding buffer member 250 provided between the lower end of the through hole H and the porous plate member 285 , and the protruding buffer member 250 may protrude further downward than the porous plate member 285 .

[0088] Atmospheric gas can be supplied to and around the substrate processing region using the first gas supply assembly 290 and the second gas supply assembly 280 to maintain the substrate processing region in an inert state and prevent oxygen and impurities from entering from the surrounding area. In the present disclosure, to ensure a more uniform flow and a constant flow rate of inert atmospheric gas, a protruding buffer member 250 can be positioned between the lower end of the through hole H for supplying atmospheric gas and the porous plate member 285, protruding further downward than the porous plate member 285. In other words, the bottom surface of the protruding buffer member 250 can be positioned at a lower height than the bottom surface of the porous plate member 285.

[0089] The protruding buffer member 250 may protrude maximally from the bottom surface of the modular atmosphere creation module 200 to form the narrowest gap between the bottom surface of the modular atmosphere creation module 200 and the top surface of the support stage module 100 (or the top surface of the substrate).

[0090] When the atmospheric gas supplied by the first gas supply member 290 reaches the substrate processing region through the lower end of the through-hole H and then diffuses outward through the narrow gap section defined by the protruding buffer member 250, the flow rate of the atmospheric gas in this section may be faster than before. In other words, the protruding buffer member 250 can induce a high-speed airflow, causing the atmospheric gas supplied through the lower end of the through-hole H to diffuse outward more quickly. The atmospheric gas passing through the protruding buffer member 250 can meet the atmospheric gas introduced through the porous plate member 285 and then escape to the outside more quickly, thereby removing oxygen and impurities from the substrate processing region or its surroundings and blocking the introduction of oxygen and impurities from the outside.

[0091] Due to the narrow gap defined by the protruding buffer member 250, the atmospheric gas supplied through the porous plate member 285 can be more effectively blocked from flowing back into the substrate processing region or from oxygen and impurities introduced from the outside.

[0092] When the through hole H extends in the second direction so that the protruding buffer member 250 is located between the lower end of the through hole H and the porous plate member 285, the protruding buffer member 250 may also extend in the second direction. In other words, the protruding buffer member 250 and the porous plate member 285 may be sequentially arranged on the outside or on both sides of the extended through hole H, with the lower end of the through hole H as the center.

[0093] The protrusion buffering member 250 may include a plate-shaped base part 251 extending along the extending direction of the through hole H, and sawtooth parts 252 provided at both ends of the base part 251 in the extending direction.

[0094] In the direction of substrate movement (i.e., the first direction), the atmospheric gas supplied through the lower end of the through hole H can block the introduction of oxygen and impurities from the surrounding environment through the atmospheric gas supplied by the protruding buffer part 250 and the porous plate part 285, but in the second direction, there may be a lack of sufficient means to block the introduction of oxygen and impurities from the surrounding environment. When a serrated part 252 is provided at each end of the plate-like base portion 251 in the extension direction, it is possible to prevent external oxygen and impurities from being introduced inward along the extension direction of the protruding buffer part 250 (i.e., the second direction), while keeping the atmospheric gas from diffusing outward along the extension direction of the protruding buffer part 250 (i.e., the second direction). Multiple serrated parts 52 can be provided on the plate-like base 251. The serrated parts 52 can not only directly block the introduction of external oxygen and impurities, but can also more effectively block the introduction of external oxygen and / or impurities by causing an inert atmospheric gas, such as nitrogen (N2), to flow outward in the recessed portion of the serrated parts 52 to generate a vortex.

[0095] The serration member 252 may have an inner bevel angle θ of each tooth. i Greater than the external bevel angle θ o .like Figure 3 As shown, the inner bevel angle θi The outer bevel angle θ may be the angle of the tooth relative to the bottom surface of the base portion 251 when facing from the inside to the outside. o The inert gas atmosphere can easily pass through the relatively gentle inner bevel angle θ. i Diffusion outwards, when the inert atmospheric gas passes through the tooth tip, due to the steep outer bevel angle θ o On the other hand, if external oxygen and impurities are introduced along the protruding buffer member 250, the external oxygen and impurities may not easily pass through the relatively steep outer bevel angle θ. o Furthermore, even if external oxygen and impurities pass through the tooth tip, they may not be able to advance further inward and may be blocked by the atmospheric gas vortex formed in the tooth recess. i Can form obtuse angles, and the external bevel angle θ o Sharp angles can be formed.

[0096] The modular atmosphere creation module 200 may further include an airflow stabilization member 260 disposed outside the porous plate member 285 , with a bottom surface thereof being disposed at the same height as the bottom surface of the porous plate member 285 to form a single plane.

[0097] Since the substrate S moves in the first direction, the atmospheric gas supplied by the first gas supply component 290 and the second gas supply component 280 must be able to stably diffuse outward along the first direction in the space between the bottom surface of the modular atmosphere creation module 200 and the top surface of the support table module 100 (or substrate S). In order to ensure airflow stability and maintain uniform flow of atmospheric gas through the porous plate component 285, an airflow stabilizing component 260 can be provided on the outside (or both sides) of the porous plate component 285 centered on the lower end of the through hole H, forming a single plane with the porous plate component 285. The bottom surface of the porous plate component 285 and the bottom surface of the airflow stabilizing component 260 can form a single plane, so that the gap with the top surface of the support table module 100 (or substrate S) can be maintained at a constant level, allowing the atmospheric gas to stably diffuse outward in a uniform flow manner. That is, the airflow stabilizing member 260 can be disposed outside the porous plate member 285 so that the bottom surface of the porous plate member 285 and the bottom surface of the airflow stabilizing member 260 form a continuous plane, allowing the atmospheric gas to diffuse outward in a stable and uniform flow. To allow the atmospheric gas to diffuse outward stably without affecting the substrate processing area, the width of the airflow stabilizing member 260 in the first direction can be approximately one to four times the width of the porous plate member 285 in the first direction. If the width of the airflow stabilizing member 260 in the first direction is too small, it may not be sufficient to guide the uniform flow of the atmospheric gas and may not be able to fully suppress the entry of external oxygen and impurities. If the width of the airflow stabilizing member 260 in the first direction is too large, the modular atmosphere creation module 200 may become too heavy, making it difficult to install and maintain the modular atmosphere creation module 200.

[0098] The module atmosphere creating module 200 may further include an oxygen measurement gas interface 271 provided on a bottom surface facing the top surface of the support table module 100 , and an oxygen measurement gas manifold 272 transmitting gas introduced through the oxygen measurement gas interface 271 to the oxygen sensor.

[0099] It is necessary to extract gas from the substrate processing region and its surroundings illuminated by laser light L. This region is supplied with inert atmospheric gas by the modular atmosphere creation module 200, and oxygen concentration is analyzed using an oxygen sensor (not shown) to confirm whether oxygen has been effectively removed from the substrate processing region and its surroundings. Because the width of the modular atmosphere creation module 200 in the second direction is greater than the width of the large-area substrate, multiple oxygen measurement gas interfaces can be provided to measure the oxygen concentration in each region along the through hole H extending in the second direction. For example, multiple oxygen measurement gas interfaces 271 can be provided to at least partially pass through the protruding buffer members 250 on both sides of the lower end of the through hole H extending in the second direction, or through multiple porous plate members 285 provided on the outer sides thereof, thereby extracting gas from the corresponding region to measure oxygen concentration. An oxygen measurement gas manifold 272 can be provided horizontally through the modular atmosphere creation module 200. Thus, gas introduced from each oxygen measurement gas interface 271 can be independently transmitted to the oxygen sensor, or multiple oxygen measurement gas interfaces 271 can be grouped to simultaneously transmit the gas introduced therefrom to the oxygen sensor.

[0100] A plurality of first gas pipes 292 or second gas pipes 281 may be provided for supplying and transferring atmospheric gas from the inert gas storage unit 410 to correspond to each region for which a plurality of oxygen measurement gas interfaces 271 for oxygen measurement are provided. The modular atmosphere creation module 200 may further include a flow control valve for controlling the flow rate of the inert gas transferred from the inert gas storage unit 410 to each first gas pipe 292 or second gas pipe 281. If the oxygen concentration in each region measured on the bottom surface of the modular atmosphere creation module 200 exceeds a default reference concentration, the flow control valve may be controlled to supply atmospheric gas at a greater flow rate, thereby controlling the oxygen concentration in that region.

[0101] The support stage module 100 may include a pair of first floating support members 110 spaced apart from each other for supporting and floating the substrate S and providing a gap at a position facing the through hole H.

[0102] The support stage module 100 may be a substrate floating device that floats the substrate S by spacing the substrate S from its surface and supports the substrate S in a non-contact manner. For example, the support stage module 100 may float the substrate S by injecting a floating gas (e.g., air) into the bottom surface of the substrate S.

[0103] In a typical substrate-floating device, a floating gas is injected upward from the continuous surface of the integral floating portion to float the substrate. As described in the present disclosure, when laser light L passes through the through-hole H of the modular atmosphere creation module 200 and atmospheric gas is supplied downward through the through-hole H to the substrate processing region illuminated by the laser light L, the upwardly injected floating gas and the downwardly supplied atmospheric gas may collide and interfere with each other, causing turbulence, thereby disrupting the uniform flow of atmospheric gas supplied to the substrate processing region. If turbulence occurs in the atmospheric gas flow above or around the substrate processing region, the substrate may vibrate, and non-uniformity in substrate processing may increase, resulting in brightness defects (mura).

[0104] To address this limitation, the pair of first floating supports 110 that support and float the substrate S can be separated from each other, thereby providing a gap at a position facing the through-hole H. As a result, the atmospheric gas supplied from the modular atmosphere creation module 200 and the floating gas supplied from the support stage module 100 can naturally escape through the space (i.e., the gap) between the pair of first floating supports 110. Since the atmospheric gas and the floating gas naturally escape through the gap located opposite the through-hole H, turbulence caused by the rapid mixing of the atmospheric gas and the floating gas can be suppressed, and a uniform and stable airflow can be formed. The atmospheric gas and the floating gas escaping through the gap can diffuse into the interior space of the chamber 400 and then be discharged to the outside by the exhaust component 500.

[0105] The support table module 100 may further include a driving component 111 for moving the first floating support member 110 to adjust the size of the gap.

[0106] The separation space (ie, the gap) formed by the pair of first floating support members 110 may need to be adjusted differently depending on whether a substrate S exists below the through hole H.

[0107] When the substrate S is not disposed below the through hole H, the atmospheric gas supplied from the module atmosphere creation module 200 and the floating gas supplied from the support table module 100 must escape through the gap at the same time, and therefore, the distance of the gap (see Figure 4 (a)) may need to be larger so that a large amount of gas can flow naturally. On the other hand, when the substrate S is disposed below the through hole H and a substrate processing process is performed, atmospheric gas may exist above the substrate S and floating gas may exist below the substrate S. Therefore, the amount of gas that must escape through the gap may be smaller, and the gap (see Figure 4 (a)) may need to be reduced so that the substrate S is stably floated and supported on the substrate processing area.

[0108] The first floating support members 110 can be fixed to the driving member 111 via a connecting support member 112. When the driving member 111 linearly reciprocates in the first direction, the first floating support members 110 fixed to the driving member 111 can also linearly reciprocate in the first direction. The gap between the pair of first floating support members 110 can be adjusted by linearly reciprocating at least one of the pair of first floating support members 110 in the first direction. The driving member 111 can be a linear motion (LM) motor extending in the first direction, or a drive cylinder extending in the first direction.

[0109] The support stage module 100 may further include a second floating support 120 provided outside the pair of first floating supports 110 to float and support the substrate S to be spaced apart from the pair of first floating supports 110. The second floating support 120 may be fixed.

[0110] To perform a substrate processing process, a substrate S can be placed on the support stage module 100 and then supported while moving in a first direction. When the substrate S reaches the substrate processing region, laser light L can be irradiated onto the substrate S, while the substrate S continues to move in the first direction away from the substrate processing region. The substrate processing process can be performed while the substrate S is stationary or while it is continuously moving. Therefore, second floating supports 120 capable of floating and supporting the substrate S can be provided on both outer sides of the pair of first floating supports 110 disposed below the through-hole H.

[0111] Like the gap between the pair of first floating supports 110, the first floating supports 110 and the second floating supports 120 may also be provided to be spaced apart from each other, allowing atmospheric gas and floating gas to flow naturally through the space (or gap) therebetween without generating eddy currents or the like. If at least one of the pair of first floating supports 110 is provided to be movable in the first direction, a space must be provided between the second floating supports 120 so that the first floating supports 110 can move therein. Therefore, the second floating supports 120 may be provided to be spaced apart from the pair of first floating supports 110.

[0112] Because the second floating support 120 is spaced apart from the substrate processing region irradiated by the laser light L, the second floating support 120 can stably support the substrate S without having to move in the first direction depending on the presence or absence of the substrate S. Multiple second floating supports 120 can be provided in series, spaced apart from one another, to provide sufficient space for placing and moving a large-area substrate S, thereby easily ensuring the required length for substrate movement. Adjacent second floating supports 120 assembled in series can also be spaced apart from one another.

[0113] The first floating support 110 may include first floating gas supply holes 113 for injecting a floating gas for floating the substrate S, and vacuum holes 114 for providing a negative pressure P1 to remove at least part of the floating gas.

[0114] The first floating gas supply holes 113 can provide a floating force by injecting a floating gas such as air to float the substrate S. Thus, the substrate S can float and be supported on the first floating support 110. A plurality of first floating gas supply holes 113 may be provided and connected to one another, and floating gas may be distributed and supplied to the plurality of first floating gas supply holes 113 from the floating gas supply member 420.

[0115] The vacuum holes 114 can provide suction through exhaust and generate a vacuum with a negative pressure P1. The vacuum holes 114 can be connected to the auxiliary exhaust component 430 to generate a vacuum, and a plurality of vacuum holes can be provided that are interconnected to generate a vacuum. Thus, a suction force can be generated to draw in and remove at least part of the floating gas or to generate an attractive force to pull the substrate S.

[0116] The first floating gas supply holes 113 and the vacuum holes 114 may be combined with each other and maintained at a predetermined height by being spaced apart from the top surface of the first floating support 110, and the floating gas supply amount of the first floating gas supply holes 113 and the negative pressure (or suction force) of the vacuum holes 114 may be adjusted using valves provided in the floating gas supply line and the auxiliary exhaust line to prevent the floating gas from being retained between the first floating support 110 and the substrate S and to precisely control the floating height.

[0117] The second floating support 120 may include a second floating gas supply hole 121 similar to the first floating support 100, which injects a floating gas to float the substrate, and an exhaust hole 122 for exhausting at least part of the floating gas. Here, the floating force of the first floating support 110 may be smaller than the floating force of the second floating support 120.

[0118] The second floating gas supply holes 121 may provide a floating force by injecting a floating gas such as air to float the substrate S, thereby allowing the substrate S to float and be supported on the second floating support 110. A plurality of second floating gas supply holes 121 may be provided, and the plurality of second floating gas supply holes 121 may be connected to each other, and the floating gas may be distributed and supplied from the floating gas supply part 420 to the plurality of second floating gas supply holes 121.

[0119] When the substrate S is supported on the second floating support 120, it only needs to be supported so that it can move in a floating state. However, when the substrate S enters the substrate processing area, the substrate S should not vibrate due to atmospheric gas or floating gas during the substrate processing process, and should also maintain a constant height and flatness.

[0120] To this end, as previously explained, the first floating support 110 can precisely control the floating height and flatness (local floating height) of the substrate S by using a combination of the first floating gas supply holes 113 and the vacuum holes 114. On the other hand, with respect to the second floating support 120 supporting the substrate S in a movable state, the floating gas injected from the second floating gas supply holes 121 can move through the exhaust holes 122 and be exhausted by back pressure.

[0121] The exhaust holes 122 may be different from the vacuum holes 114 that provide the negative pressure required for precise substrate height adjustment (or floating force) because the floating gas is moved by back pressure. The pressure P2 applied to the exhaust holes 122 may be the same as the pressure within the chamber 400, or may be a negative pressure for rapid exhaust, but may be higher than the pressure P1 applied to the vacuum holes 114 (the absolute value of the negative pressure may be smaller).

[0122] If the floating height of the support stage module 100 is high, the substrate S may float from the top surface to a higher height, and thus, the substrate S can float stably without colliding with the top surface of the support stage module 100. However, as the amount of injected floating gas or the injection pressure changes, the substrate S may vibrate, and the flatness of the substrate S may also change. Therefore, the floating force of the second floating support 120 that can movably support the substrate S in a floating state may increase to float the substrate height, while the floating force of the first floating support 110 may decrease to accurately control the height and flatness of the substrate S when the substrate S enters the substrate processing area. For example, the floating height (h1) of the substrate on the first floating support 110 may be approximately 30 μm to approximately 50 μm, while the floating height (h2) of the substrate on the second floating support 120 may be approximately 300 μm to approximately 500 μm.

[0123] The floating force of the first floating support 110 and the second floating support 120 can be adjusted by controlling the injection pressure or injection amount of the floating gas, the pressure intensity applied to the vacuum holes 114 / exhaust holes 122, etc., and can also be adjusted by changing the distribution and aperture of the first floating gas supply holes 113 and the vacuum holes 114, the distribution and aperture of the second floating gas supply holes 121 and the exhaust holes 122, etc.

[0124] The substrate processing apparatus according to an embodiment may further include a measurement assembly 130 that detects optical characteristics of the laser light L or a proximity state of the substrate S through a gap between the pair of first floating supports 110 .

[0125] The optical characteristics of the laser light L irradiated onto the substrate S may be adjusted or changed when passing through the various optical systems and the window (or lens portion) 215 provided in the laser irradiation unit 300. Therefore, it is desirable to directly measure and analyze the optical characteristics of the laser light L irradiated onto the substrate S, such as energy beam uniformity and energy power, in the substrate processing area. In addition, it is necessary to measure whether the moving substrate S approaches the substrate processing area and the flying height and flatness of the substrate S.

[0126] The measurement component 130 can detect the optical characteristics of the laser light L on the substrate processing area or the proximity state of the substrate S through the gap between the pair of first floating supports 110. The measurement component 130 can be an optical sensor for measuring optical characteristics, a distance sensor or a proximity sensor for measuring the distance to the substrate S, or a visual camera for directly observing the laser light L or the substrate S.

[0127] If the pair of first floating supports 110 moves outward before the substrate S approaches the substrate processing region irradiated with the laser light L, the gap width a between the pair of first floating supports 110 may widen, and the measurement component 130 may enter the widened gap to measure the optical characteristics of the irradiated laser light L and measure whether the substrate S is approaching. Here, the measurement component 130 may be moved from the standby position (see Figure 4 (a)) rises to the measuring position (see Figure 4 (b)), or may move in the second direction along the through hole H extending in the second direction when the laser light L measures the optical characteristics. To this end, the substrate processing apparatus may further include a moving component 131 that moves the measuring component 130 in at least one of the vertical direction and the horizontal direction.

[0128] When a substrate S approaches the substrate processing area irradiated with laser light L, the measurement assembly 130 measures the distance or proximity of the substrate S. During the substrate processing process, the pair of first supports 110 can be moved inward to reduce the gap width a'. The measurement assembly 130 can be moved to a standby position via the movement assembly 131, allowing the substrate processing process to proceed undisturbed. After the substrate S reaches the substrate processing area, the substrate flatness can also be measured by measuring the local height of the substrate S at the widened gap width a (measurement position).

[0129] In other words, substrate processing can be performed under optimal substrate processing conditions by using a pair of first floating supports 110 (which are provided to be movable in a first direction and capable of adjusting the width of the gap) and a measurement component 130 (which collects various information about the laser light L and the substrate S through the adjustable gap).

[0130] In the substrate processing equipment disclosed herein, inert atmospheric gas can be supplied simultaneously to the interior of the through hole (through which the laser light passes) and the support table module supporting the substrate, so that the area where the substrate processing process is performed can be effectively maintained in an inactive state, while also stabilizing the supporting substrate, thereby suppressing unnecessary modification of the thin film or the generation of impurities, and improving the quality of the substrate processing process.

[0131] The flow of atmospheric gas can be guided to the area of ​​the substrate processing process through the internal structure of the through hole. In addition, the atmospheric gas can be supplied to the support table module around the through hole by using a porous plate component (rather than a general nozzle method) to uniformly supply the atmospheric gas and minimize the impact of the atmospheric gas flowing back to the substrate processing area irradiated with laser light.

[0132] In addition, the atmospheric gas supplied into the through-hole through the protruding buffer part arranged between the lower end of the through-hole and the porous plate part can flow evenly to the outside of the substrate processing area and prevent the active gases such as oxygen existing outside from being introduced into the substrate processing area, thereby blocking external influences.

[0133] Furthermore, the support stage module can be configured as a separate structure, allowing the atmospheric gas supplied from the atmosphere creation module and the floating gas used to float the substrate to be smoothly discharged through the gap between the separate structures, thereby preventing turbulence caused by the flow interference between the atmospheric gas and the floating gas. As a result, a stable and uniform airflow can be guided to the substrate processing area where the laser light is irradiated, effectively suppressing the brightness defect (mura) phenomenon caused by quality degradation during the substrate processing process.

[0134] Furthermore, the support stage module can directly measure the optical characteristics of the laser light and the proximity status of the substrate on the substrate processing area through the gap between the separation structures, thereby more effectively managing the quality of the substrate processing process.

[0135] In the substrate processing apparatus disclosed herein, an inert atmosphere is simultaneously supplied to the interior of the through-hole (through which laser light passes) and the support stage module supporting the substrate. This effectively maintains the area where the substrate processing is performed in an inactive state while also stabilizing the substrate support. Furthermore, this suppresses unnecessary modification of the thin film or the generation of impurities, thereby improving the quality of the substrate processing process.

[0136] The flow of atmospheric gas can be guided to the area of ​​the substrate processing process through the internal structure of the through hole. In addition, the atmospheric gas can be supplied to the support table module around the through hole by using a porous plate component (rather than a general nozzle method) to uniformly supply the atmospheric gas and minimize the impact of the atmospheric gas flowing back to the substrate processing area irradiated with laser light.

[0137] In addition, the atmospheric gas supplied into the through-hole through the protruding buffer part arranged between the lower end of the through-hole and the porous plate part can flow evenly to the outside of the substrate processing area and prevent the active gases such as oxygen existing outside from being introduced into the substrate processing area, thereby blocking external influences.

[0138] Furthermore, the support stage module can be configured as a separate structure, allowing the atmospheric gas supplied from the atmosphere creation module and the floating gas used to float the substrate to be smoothly discharged through the gap between the separate structures, thereby preventing turbulence caused by the flow interference between the atmospheric gas and the floating gas. As a result, a stable and uniform airflow can be guided to the substrate processing area where the laser light is irradiated, effectively suppressing the brightness defect (mura) phenomenon caused by quality degradation during the substrate processing process.

[0139] The term "upper" used in the above description includes direct contact and indirect contact between the upper and lower parts relative to each other. Not only the entire top surface or the entire bottom surface can be positioned, but also part of the top surface or bottom surface can be positioned, which is used to express the meaning of being relative to or in direct contact with the upper surface or bottom surface in position. In addition, the terms "top", "bottom", "front end", "rear end", "above", "below", "upper end", "lower end", etc. used in the above description are defined based on the illustrations for convenience. The shape and position of each component are not limited by this term.

[0140] Although the preferred embodiments of the present invention have been described with reference to a number of illustrative embodiments, the embodiments of the present invention are not limited to the aforementioned embodiments. Therefore, it should be understood that those skilled in the art can design numerous other modifications and embodiments that are consistent with the spirit and scope of the principles of the present invention. Therefore, the actual scope of protection of the present invention should be determined by the technical scope of the appended claims.

Claims

1. A substrate processing device, characterized in that: include: a support platform module configured to support a substrate; a laser irradiation unit configured to irradiate laser light onto the substrate; as well as an atmosphere creation module provided with a through hole through which the laser light passes, The atmosphere creation module includes: a first gas supply component configured to supply atmospheric gas into the through hole, and The second gas supply component is configured to supply the atmospheric gas to the support table module. 2 . The substrate processing apparatus according to claim 1 , wherein the through hole includes a region in which a cross-sectional area gradually decreases downward.

3. The substrate processing apparatus according to claim 1 , wherein the first gas supply part comprises: a first gas supply interface, provided in a side wall of the through hole, for supplying the atmospheric gas into the through hole; a first gas conduit through which the atmospheric gas supplied from the outside flows; as well as a first gas connection channel configured to connect the first gas pipeline to the first gas supply interface to transmit the atmospheric gas, The first gas connecting channel has a length longer than the shortest distance between the first gas pipeline and the first gas supply interface. 4 . The substrate processing apparatus according to claim 3 , wherein a protrusion is provided on the other side wall of the through hole, the other side wall being opposite to the one side wall of the through hole. The substrate processing apparatus according to claim 4 , wherein a tip of the protrusion faces a lower side of the through hole. 6 . The substrate processing apparatus according to claim 1 , wherein the second gas supply part comprises a porous plate part disposed to face the top surface of the support table module and through which the atmospheric gas passes.

7. The substrate processing apparatus according to claim 6, wherein the second gas supply part comprises: a second gas conduit through which the externally supplied atmospheric gas flows; a second upper gas connecting pipe connected to the second gas pipeline for transmitting the atmospheric gas; a buffer space member connected to the second gas upper connecting pipe, the buffer space member having a cross-sectional area larger than the total cross-sectional area of ​​the second gas upper connecting pipe; as well as A second gas lower connecting pipe connected to the buffer space part is used to transmit the atmospheric gas to the porous plate part. 8 . The substrate processing apparatus according to claim 6 , wherein the atmosphere creating module further comprises a protrusion buffer member provided between a lower end of the through hole and the porous plate member and provided to protrude further downward than the porous plate member.

9. The substrate processing apparatus according to claim 8, wherein the protrusion buffer member comprises: a base portion extending along an extending direction of the through hole; as well as Sawtooth parts are provided at both ends of the base portion in the extending direction.

10. The substrate processing apparatus according to claim 9, wherein the sawtooth member is provided with teeth whose inner inclination (θi) is greater than the outer inclination (θo).

11. The substrate processing apparatus according to claim 6, wherein the atmosphere creating module further comprises a gas flow stabilizing member provided outside the porous plate member, a bottom surface of which is provided at the same height as a bottom surface of the porous plate member to form a single plane.

12. The substrate processing apparatus according to claim 1, wherein the atmosphere creation module comprises: an oxygen measurement gas interface disposed on a bottom surface facing the top surface of the support platform module; as well as An oxygen measurement gas manifold is configured to transmit the gas introduced through the oxygen measurement gas interface to the oxygen sensor. 13 . The substrate processing apparatus according to claim 1 , wherein the support stage module comprises a pair of first floating supports configured to float and support the substrate and spaced apart from each other to provide a gap at positions facing the through hole. 14 . The substrate processing apparatus according to claim 13 , wherein the support stage module further comprises a driving part configured to move the first floating support to adjust a size of the gap. 15 . The substrate processing apparatus according to claim 13 , wherein the supporting stage module further comprises a second floating support configured to float and support the substrate and disposed outside the pair of first floating supports to be separated and spaced apart from the pair of first floating supports.

16. The substrate processing apparatus of claim 15, wherein the second floating support is fixed.

17. The substrate processing apparatus according to claim 13, wherein each of the first floating supports comprises: a first floating gas supply hole through which a floating gas for floating the substrate is injected; as well as A vacuum port is configured to provide negative pressure to remove at least a portion of the floating gas.

18. The substrate processing apparatus according to claim 15, wherein the second floating support comprises: a second floating gas supply hole through which a floating gas for floating the substrate is injected; as well as an exhaust hole through which at least a portion of the floating gas is exhausted, The buoyancy force of the first floating support member is smaller than the buoyancy force of the second floating support member.

19. The substrate processing apparatus according to claim 13, further comprising a measurement assembly configured to detect an optical characteristic of the laser light or a proximity state of the substrate through a gap between a pair of the first floating supports. 20 . The substrate processing apparatus according to claim 19 , further comprising a moving assembly configured to move the measuring assembly in at least one of a vertical direction and a horizontal direction.

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