Hall sensor with magnetic concentrator

Abstract

The invention relates to a Hall sensor with a magnetic concentrator. In an example, a Hall sensor (104) may include an IC die (108) formed on a lead frame (102) configured to conduct a current, the IC die (108) configured to sense a magnetic field generated by the current. The Hall sensor (104) may include at least one film (112) of magnetically conductive material formed on the IC die (108). The Hall sensor (104) may include at least one layer of permalloy material (114) formed on a respective at least one film of magnetically conductive material (112), the at least one film of magnetically conductive material (112) and the at least one layer of permalloy material (114) in combination to provide a magnetic concentrator (110) that provides concentration of the magnetic field.

Description

Technical Field

[0001] The present application relates to Hall sensors, and more particularly, to magnetic concentrators implemented in electronic component packages. Background Art

[0002] Hall sensors are used in many modern electronic systems to sense the presence of a magnetic field, and in some cases, the strength of the magnetic field. Hall sensors can be used as the basis for current measurement, for example, in motor systems, energy distribution systems, electrical equipment, power transmission, and the like. Magnetic field sensing is also commonly used for position or proximity sensing, such as in industrial, security, and other mechanical applications. The Hall effect occurs when a magnetic field is oriented perpendicular to the current. A typical Hall sensor typically comprises a strip or plate of conductive material through which current flows. When the plate is positioned in a magnetic field so that a component of the field is perpendicular to the plate, a Hall voltage is generated within the plate in a direction perpendicular to both the direction of the magnetic field and the direction of the current. Summary of the Invention

[0003] The present disclosure relates to systems for Hall sensors having layered magnetic concentrators and methods of making the same.

[0004] In one example, a Hall sensor may include an IC die formed on a leadframe configured to conduct current, the IC die configured to sense a magnetic field generated by the current. The Hall sensor may include at least one magnetically permeable material film formed on the IC die. The Hall sensor may include at least one permalloy material layer formed on the at least one magnetically permeable material film, the at least one magnetically permeable material film and the at least one permalloy material layer combining to form a magnetic concentrator that concentrates the magnetic field.

[0005] In yet another example, a method of manufacturing a Hall sensor may include forming an IC die on a lead frame configured to conduct current, the IC die configured to sense a magnetic field generated by the current. The method may include forming at least one magnetically permeable material film on the IC die. The method may include forming at least one permalloy material layer on the at least one magnetically permeable material film, the at least one magnetically permeable material film and the at least one permalloy material layer combining to provide a magnetic concentrator that concentrates the magnetic field.

[0006] In one example, a Hall sensor system may include a leadframe configured to conduct an electric current. The Hall sensor system may include an integrated circuit (IC) die formed on the leadframe, the IC die configured to sense a magnetic field generated by the electric current. The Hall sensor system may include at least one magnetically permeable material film formed on the IC die to provide concentration of the magnetic field. The Hall sensor system may include at least one permalloy material layer formed on the at least one magnetically permeable material film, the at least one magnetically permeable material film and the at least one permalloy material layer combining to provide a magnetic concentrator that provides concentration of the magnetic field.

[0007] In yet another example, a method for manufacturing a Hall sensor system may include forming a leadframe to conduct current. The method for manufacturing a Hall sensor system may include manufacturing an integrated circuit (IC) die. The method for manufacturing a Hall sensor system may include forming at least one magnetically permeable material film on the IC die. The method for manufacturing a Hall sensor system may include forming at least one magnetic concentrator on the corresponding at least one magnetically permeable material film, wherein the IC die, the at least one magnetically permeable material film, and the at least one magnetic concentrator combine to form a Hall sensor. The method for manufacturing a Hall sensor system may include providing the Hall sensor on a leadframe. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 A diagram illustrating an electronics package for a Hall sensor.

[0009] Figure 2 A diagram illustrating an electronics package that includes a Hall sensor.

[0010] Figure 3A and 3B An example of the fabricated Hall effect sensor is described.

[0011] Figure 4 Example diagram illustrating a Hall sensor.

[0012] Figure 5 A flow chart illustrating a process for manufacturing an electronic component package.

[0013] Figure 6 A flow chart illustrating the process for fabricating a Hall sensor system. DETAILED DESCRIPTION

[0014] This disclosure describes an electronic component package including a Hall effect sensor and a method for forming a magnetic concentrator. As described herein, by implementing the Hall effect sensor's magnetic concentrator as a multilayer structure of a thin magnetically conductive film and a permalloy layer, the extremely thin magnetically conductive film can be used to mitigate warpage of the wafer on which the Hall effect sensor's circuit die is fabricated, while the permalloy layer providing the magnetic concentrator ensures sufficient operational capability for the Hall effect sensor.

[0015] As an example, an electronic component package described herein includes a Hall sensor comprising multiple Hall sensor elements for sensing a magnetic field in an operating environment. In one example, at least one magnetic concentrator can provide concentration of the magnetic field sensed by the Hall sensor of the integrated circuit in the electronic component package. As an example, a magnetically conductive material film and a permalloy material layer can be combined via a die attach film to form a magnetic concentrator that provides magnetic field concentration. Forming a magnetic concentrator with a combined thin magnetically conductive material film and permalloy material layer mitigates warpage in the wafer on which the integrated circuit is fabricated while maintaining sufficient operating parameters. As described in more detail herein, by depositing the magnetically conductive material as an extremely thin film during fabrication of the wafer containing the circuit die of the Hall sensor, mechanical stresses that can cause physical warpage of the wafer (e.g., greater than 400 μm) can be mitigated. Adding a permalloy material layer to the magnetic concentrator ensures that the Hall sensor can exhibit sufficient magnetic field concentration, even with the small dimensions of the extremely thin magnetically conductive material film for proper operation of the Hall sensor.

[0016] As described herein, an integrated circuit with a layered magnetic concentrator includes a magnetically permeable material film formed into a configuration with a reduced diameter and reduced thickness relative to conventional Hall effect sensors. In one example, the magnetically permeable material film can be a thin coating (e.g., nickel-iron). A permalloy material layer can be provided on top of the magnetically permeable material film to provide sufficient magnetic coupling (e.g., greater than approximately 0.41 mT / A) to the magnetic concentrator structure. The magnetic concentrator structure, including the magnetically permeable material film and the permalloy material layer, enables the Hall effect sensor to operate with sufficient magnetic coupling to detect the magnitude of current flowing through an associated lead frame.

[0017] refer to Figure 1 , depicts a block diagram of an electronic component package 100 according to the present disclosure. The electronic component package 100 includes a lead frame 102 having a Hall sensor 104 electrically coupled to the lead frame 102 for detecting a current I LFThe magnetic field generated by the current flowing through the lead frame 102. The Hall sensor 104 may include a circuit die 106 including one or more Hall sensing elements 108 and one or more magnetic concentrators 110, each of which includes a magnetically conductive material film 112 and a permalloy material layer 114. For example, the magnetic concentrator 110 may be formed in a layered configuration including the permalloy material layer 114 stacked on the magnetically conductive material film 112 on the surface of the lead frame 102 and bonded by a die attach film (not shown).

[0018] The circuit die 106 of the Hall sensor 104 can be disposed on the surface of the lead frame 102. The Hall sensing element 108 and sensor circuitry (not shown) can be configured to be flush with or embedded in the surface of the circuit die 106. In another example, the Hall sensing element 108 and sensor circuitry can be disposed on the surface of the circuit die 106. The Hall sensing element 108 can be a device made of a type IV semiconductor material, such as silicon (Si) or germanium (Ge), or a type III-V semiconductor material, such as gallium arsenide (GaAs) or indium antimonide (InSb).

[0019] In one example, the circuit die 106, in which the Hall sensing element 108 may be formed, may be attached to the lead frame 102 by various techniques, such as using solder bumps or wire bonding. The lead frame 102 may take various forms, and the circuit die 106 may be attached to the lead frame 102 in an orientation such that the active surface of the circuit die 106 (e.g., the surface on which the Hall sensing element 108 is formed) is adjacent to the lead frame in a flip-chip arrangement, with the active surface of the circuit die 106 opposite the lead frame surface in a die-up arrangement, or with the circuit die 106 positioned below the lead frame 102 in a lead-on-chip arrangement.

[0020] The magnetic concentrator 110 may be configured to include a layer comprising a film 112 of a magnetically permeable material (eg, nickel iron). The magnetic concentrator 110 may be disposed on or near the surface of the circuit die and arranged so that the current I LF The generated magnetic field B CRNT can be concentrated in the magnetic concentrator 110, thereby facilitating the Hall sensing element 108 to detect the magnetic field B CRNT . Figure 1 Show that the current I LF The magnetic field B generated by the lead frame 102 (eg, arranged in a 180° bend) CRNT , so that the Hall sensor 104 can be based on the measured magnetic field B CRNT The value of the current I is measured LFA first surface of the magnetically conductive material film 112 may contact a surface of the circuit die 106 , and a second surface of the magnetically conductive material film 112 opposite to the first surface may contact and bond to the permalloy material layer 114 .

[0021] Some conventional Hall sensors can be manufactured by forming a magnetic concentrator solely from a film of magnetically permeable material (e.g., NiFe). However, to achieve sufficient magnetic coupling to facilitate proper operation of the Hall sensor, the magnetically permeable material film on conventional Hall sensors is formed to have relatively large dimensions (e.g., at least 42 μm thick and approximately 1000 μm in diameter). Such relatively large magnetically permeable material films on conventional Hall sensors can result in unacceptably excessive warpage of the wafer on which the conventional Hall sensor circuit is fabricated. However, as described herein, by forming each of the magnetic concentrators 110 from a combination of a magnetically permeable material film 112 and a permalloy material layer 114, the magnetic concentrators 110 can exhibit sufficient magnetic coupling (e.g., greater than approximately 0.41 mT / A) while also mitigating warpage of the wafer on which the circuit die 106 is fabricated.

[0022] As a first example, the magnetically conductive material film 112 may have a thickness between approximately 20 μm and 25 μm and a diameter between approximately 900 μm and 1000 μm. As a second example, the magnetically conductive material film 112 may have a thickness between approximately 30 μm and 38 μm and a diameter between approximately 800 μm and 900 μm. In either example, the permalloy material layer 114 may have a thickness between approximately 95 μm and 105 μm and may have length / width dimensions between approximately 600 μm and 900 μm. Reducing the size and thickness of the magnetically conductive material film 112 relative to conventional Hall effect sensors may help reduce warpage in the wafer on which the circuit die 106 is fabricated, while the addition of the permalloy material layer 114 may enable magnetic coupling to provide sufficient operation of the Hall effect sensor 104.

[0023] The combination of the magnetic conductive material film 112 and the permalloy material layer 114 is configured to form a structure of the magnetic concentrator 110 to achieve a magnetic field B CRNT Sufficient magnetic coupling (e.g., greater than about 0.41 mT / A) can be maintained by the magnetic concentrator 110 based on manufacturing the magnetic concentrator 110 to include the permalloy material layer 114 without risking warpage in the wafer on which the electronic component package 100 is manufactured.

[0024] Now turn Figure 2, depicts a diagram of an electronic component package 200 including a Hall sensor according to the present disclosure. The electronic component package 200 includes a circuit die 202 having a first active surface on which one or more Hall sensing elements 208 are disposed, and a second, opposing surface of an insulating layer 204 attached to the first surface of a lead frame 206.

[0025] Conventional techniques for securing the die 202 to the isolation layer 204 include the use of adhesives (e.g., epoxy or tape). In one example, the isolation layer 204 can be a connected area that separates the die 202 from the lead frame 206 to electrically isolate and mechanically protect the die 202 and the enclosed portion of the lead frame 206. Suitable materials for the isolation layer 204 can include thermoset and thermoplastic molding compounds and other commercially available IC molding compounds, as long as such materials are non-conductive. The isolation layer 204 is applied to the lead frame 206 and the die 202 to enclose the die 202 and a portion of the lead frame 206.

[0026] The magnetic concentrator may be provided by a first layer 210 of permalloy material formed over a second layer 212 formed of a film of magnetically conductive material. Various conventional wafer-level packaging techniques may be used to provide the first layer 210, such as pouring, molding, or coating, to provide a shielding effect for the second layer 212. The second layer 212 may be provided as a film of a soft ferromagnetic material (e.g., NiFe). In one example, the first layer 210 may have a first surface opposite a second surface of each respective second layer 212, such that the first and second surfaces may have different surface areas. In a first example, the second layer 212 may have a relatively small thickness (e.g., approximately 20 to 25 microns) and a relatively large diameter (e.g., approximately 900 to 1000 microns). Alternatively, in a second example, the second layer 212 may have a relatively large thickness (e.g., approximately 20 to 38 microns) and a relatively small diameter (e.g., approximately 800 to 900 microns). In either example, the first layer 210 may have a thickness of about 95 μm to 105 μm and length / width dimensions of about 600 μm to 900 μm to achieve sufficient magnetic coupling greater than about 0.41 mT / A to facilitate the magnetic field B CRNT appropriate detection.

[0027] Those skilled in the art will appreciate that although the active surface of the circuit die 202 is described herein as the surface in which the Hall sensing element 208 is disposed or formed "in" (as is the case with certain types of magnetic field elements, such as a Hall plate), the element may be disposed "above" or "on" the active surface, such as a magnetoresistive element. However, for simplicity of explanation, while the examples described herein may utilize any suitable type of magnetic field sensing element, such elements will generally be described herein as being formed or disposed "in" the active surface of the circuit die 202.

[0028] In use, the electronic component package 200 described herein may be configured to monitor a current I provided through the lead frame 206 via an associated Hall sensor (eg, Hall sensing element 208). LF The generated magnetic field B CRNT Therefore, the electronic component package 200 can be based on the magnetic field B CRNT The magnitude of determines the current I through the lead frame 206 LF The amplitude of .

[0029] Now turn Figure 3A and 3B , depicting a Hall sensor system 300 fabricated in accordance with the present disclosure. Hall sensor system 300 includes a Hall sensor 302 bonded to a lead frame 304. Hall sensor 302 can be used in applications for determining the magnitude of current passing through lead frame 304 based on detecting a magnetic field associated with the current passing through lead frame 304. Hall sensor 302 can detect the magnetic field generated by the current passing through the lead frame (e.g., via a Hall sensor element in an associated circuit die 312) and can provide an output signal (e.g., an output voltage) having a magnitude corresponding to the magnetic field. At least one film 308 of magnetically permeable material and at least one layer 310 of permalloy material can be provided on circuit die 312 of Hall sensor 302. The film 308 of magnetically permeable material and the layer 310 of permalloy material can each combine to provide a magnetic concentrator that concentrates the magnetic field generated by the current flowing through lead frame 304.

[0030] Hall sensor 302 is shown as an eight-pin single in-line package, but may include any suitable number of pins. Hall sensor 302 may be separated from lead frame 304 by an isolation layer to electrically isolate conductive lead frame 304 from circuit die 312. The isolation layer may be formed of a non-conductive material having a sufficient dielectric constant to insulate circuit 312 from the high current provided in lead frame 304. Conventional techniques for securing circuit die 312 to the isolation layer include the use of adhesives such as epoxy or tape.

[0031] In one example, the plurality of leads 314 can extend beyond the circuit die 312 to pins of an associated package in electrical communication with the circuit die 312. A plurality of lead terminals 306 can be provided on the circuit die 312 to provide electrical contact with the leads 314. The plurality of leads 314 can be provided for input and output signals associated with the active circuitry of the Hall sensor 302. Figure 3A A top view of Hall sensor 302 is shown, wherein one or more connection terminals 316 may be provided in electrical communication with lead frame 304 to provide a current connection to the lead frame of magnetic field sensor 300 .

[0032] During the fabrication of circuit die 312, a Hall sensor element is formed within circuit die 312. A magnetic concentrator, comprising a magnetically permeable material film 308 and a permalloy material layer 310, is formed above the Hall sensor element on circuit die 312. The magnetically permeable material film 308 of the magnetic concentrator is formed on the upper surface of circuit die 312. The permalloy material layer is formed on the magnetically permeable material film 308 by any suitable deposition process. In one example, the magnetically permeable material film 308 can be formed to have predefined dimensions (e.g., approximately 20 μm to 25 μm thick and approximately 900 μm to 1000 μm in diameter, or approximately 30 μm to 38 μm thick and approximately 800 μm to 900 μm in diameter) to mitigate warping of the wafer on which the circuit die 312 is fabricated during deposition of the magnetically permeable material film 308. By including a permalloy material layer 310 on a magnetically permeable material film 308 to form a magnetic concentrator, the magnetic concentrator as described herein is operable to provide magnetic coupling operationally sufficient to accurately determine the magnitude of current passing through the lead frame 304 (e.g., greater than approximately 0.41 mT / A).

[0033] Now turn Figure 4 , depicting an example of a Hall sensor 400 shown in a cross-sectional view according to the present disclosure. The Hall sensor 400 may be configured to detect a current I flowing through a lead frame 402. LF The generated magnetic field B CRNT .exist Figure 4 In the example of Figure 3A and 3B As shown in the example of FIG, the shape of the lead frame 402 with a 180° bend exhibits a magnetic field B CRNT The two parts around the lead frame 402 rotate in opposite directions. CRNT , the circuit die 408 is shown as a cross-section in the middle (between the two portions of the lead frame 402 ).

[0034] The magnetic field sensor 400 can measure the magnetic field B CRNT , and thus the measured current I LF .exist Figure 4 In the example, the magnetic field B CRNT The magnetic field is concentrated in the magnetic concentrator formed by the magnetic conductive material film 404 and the permalloy material layer 406 on the circuit die 408. The combination of the magnetic conductive material film 404 and the permalloy material layer 406 can be provided for sufficient magnetic coupling (e.g., greater than about 0.41 mT / A) to accurately detect the magnetic field B. CRNT , in order to determine the current I passing through the lead frame 402 LF However, by providing the magnetically permeable material film 404 as a thin film during fabrication of the Hall sensor 400, warpage in the associated wafer on which the circuit die 408 is fabricated may be substantially mitigated (eg, to less than about 400 μm).

[0035] The foregoing summarizes the features of several examples so that those skilled in the art may better understand the various aspects of the present disclosure. Those skilled in the art will appreciate that they may readily use this disclosure as a basis for designing or modifying other processes and structures for achieving the same purposes and / or achieving the same advantages of the embodiments introduced herein. Those skilled in the art will also recognize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that various changes, substitutions, and modifications may be made herein without departing from the spirit and scope of the present disclosure.

[0036] Reference Figure 5 , illustrating a flowchart 500 for forming an electronic component package according to one or more examples described herein.

[0037] At 502 , the flow chart includes forming an integrated circuit (IC) die on a lead frame configured to conduct current, the IC die configured to sense a magnetic field generated by the current.

[0038] At 504 , the flow chart includes forming at least one film of magnetically permeable material on the IC die.

[0039] At 506 , the flow chart includes forming at least one permalloy material layer on the corresponding at least one magnetic material film, the at least one magnetically permeable material film combined with the at least one permalloy material layer to provide a magnetic concentrator that provides concentration of a magnetic field.

[0040] The method of manufacturing the electronic component package further includes each of the at least one permalloy layer having a first surface opposite to a second surface of each corresponding magnetically conductive material film of the at least one magnetically conductive material film, wherein the first surface and the second surface have different surface areas.

[0041] The method of manufacturing the electronic component package further includes the at least one magnetic conductive material film having a thickness between about 20 μm and 25 μm and a diameter between about 900 μm and 1000 μm, wherein the at least one permalloy material layer has a thickness between about 95 μm and 105 μm and a diameter between about 600 μm and 900 μm.

[0042] The method of forming the magnetically conductive material film further includes the at least one magnetically conductive material film having a thickness between approximately 30 μm and 38 μm and a diameter between approximately 800 μm and 900 μm.

[0043] The method of manufacturing an electronic component package further includes providing a magnetic coupling greater than 0.41 mT / A when the magnetic concentrator is operated at a current greater than 200 A.

[0044] Reference Figure 6 , illustrating a flowchart 600 for forming a Hall sensor system according to one or more examples described herein.

[0045] At 602 , the flow chart includes forming a leadframe configured to conduct electrical current.

[0046] At 604 , the flow chart includes forming an integrated circuit (IC) die on a leadframe.

[0047] At 606 , the flow chart includes forming at least one film of magnetically permeable material on the IC die.

[0048] At 608 , the flow chart includes forming at least one magnetic concentrator on the corresponding at least one film of magnetically permeable material, wherein the IC die, the at least one film of magnetically permeable material, and the at least one magnetic concentrator combine to form a Hall sensor.

[0049] At 610 , the flow chart includes providing a Hall sensor on a lead frame.

[0050] The method of manufacturing a Hall sensor system further includes each of the at least one permalloy layer having a first surface opposite a second surface of each corresponding magnetically permeable material film of the at least one magnetically permeable material film, wherein the first surface and the second surface have different surface areas.

[0051] The method of manufacturing a Hall sensor system further includes the at least one magnetically conductive material film having a thickness between approximately 20 μm and 25 μm and a diameter between approximately 900 μm and 1000 μm, wherein the at least one permalloy material layer has a thickness between approximately 95 μm and 105 μm and a diameter between approximately 600 μm and 900 μm.

[0052] The method of forming the magnetically conductive material film further includes the at least one magnetically conductive material film having a thickness between approximately 30 μm and 38 μm and a diameter between approximately 800 μm and 900 μm.

[0053] The method of manufacturing a Hall sensor system further includes providing a magnetic coupling greater than 0.41 mT / A by the magnetic concentrator when operating at a current greater than 200 A.

[0054] The foregoing detailed description is illustrative only and is not intended to limit the application or use of the examples and / or examples. In addition, it is not intended to be bound by any explicit or implicit information presented in the foregoing background or summary paragraphs or the specific implementation method paragraphs.

[0055] As used in the specification and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0056] Unless otherwise indicated, any element, characteristic, feature, or combination of elements, characteristics, and features may be used in any example disclosed herein, regardless of whether the element, characteristic, feature, or combination is explicitly disclosed in the example. It will be readily understood that features described with respect to any particular aspect described herein may be applicable to other aspects described herein, provided that the features are compatible with the aspect. Specifically, features described herein with respect to a method may be applicable to a magnetic field sensing product, and vice versa.

[0057] References throughout this specification to "one example" or "an example" mean that the particular features, structures, or characteristics described in connection with the example are included in at least one example. Thus, the appearance of the phrases "in one example," "in one aspect," or "in an example" in various places throughout this specification are not necessarily referring to the same example. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more examples.

[0058] The words "exemplary" and / or "illustrative" are used herein to mean serving as examples, instances, or illustrations. For the avoidance of doubt, the subject matter disclosed herein is not limited by such examples. In addition, any aspect or design described herein as exemplary and / or demonstrative is not necessarily to be construed as preferred or advantageous over other aspects, nor is it intended to exclude equivalent exemplary structures and technologies known to those skilled in the art. Furthermore, to the extent that words such as "including," "having," "containing," and other similar words are used in the detailed description or claims, such terms are intended to be inclusive in a manner similar to the term "comprising" as an open transition word, without excluding any additional or other elements.

[0059] The above description includes non-limiting aspects of various examples. Of course, it is not possible to describe every conceivable combination of components or methodologies for purposes of describing the disclosed subject matter, but one skilled in the art will recognize that additional combinations and permutations of the various examples are possible. The disclosed subject matter is intended to encompass all such alterations, modifications, and variations that come within the spirit of the appended claims.

[0060] With respect to the various functions performed by the above-described components, unless otherwise indicated, the terms used to describe such components (including references to "means") are intended to also include any structure that performs the specified function of the described components (e.g., functionally equivalent), even if structurally not equivalent to the disclosed structure. In addition, while particular features of the disclosed subject matter may have been disclosed with respect to only one of several embodiments, such features may be combined with one or more other features of other embodiments, which may be desirable and advantageous for any given or particular application.

[0061] As used herein, the terms "exemplary" and / or "illustrative" are intended to mean serving as an example, instance, or illustration. For the avoidance of doubt, the subject matter disclosed herein is not limited to such examples. In addition, any aspect or design described herein as "exemplary" and / or "illustrative" is not necessarily to be construed as preferred or advantageous over other aspects or designs, nor is it intended to exclude equivalent structures and techniques known to those skilled in the art. Furthermore, to the extent that words such as "including," "having," "containing," and other similar words are used in the detailed description or claims, such terms are intended to be inclusive in a manner similar to the term "comprising" as an open transition word, without excluding any additional or other elements.

Claims

1. An electronic component package, comprising: an IC die formed on a lead frame, the lead frame configured to conduct an electric current, the IC die configured to sense a magnetic field generated by the electric current; at least one magnetic conductive material film formed on the IC die; as well as At least one permalloy material layer is formed on the corresponding at least one magnetically conductive material film, and the at least one magnetically conductive material film and the at least one permalloy material layer are combined to provide a magnetic concentrator, which provides concentration of the magnetic field.

2. The electronic component package of claim 1 , wherein each of the at least one permalloy layer has a first surface opposite to a second surface of each corresponding magnetically conductive material film of the at least one magnetically conductive material film, wherein the first surface and the second surface have different surface areas.

3. The electronic component package of claim 1 , wherein the at least one magnetic conductive material film has a thickness between about 20 μm and 25 μm and a diameter between about 900 μm and 1000 μm, wherein the at least one permalloy material layer has a thickness between about 95 μm and 105 μm and a diameter between about 600 μm and 900 μm. 4 . The electronic component package of claim 1 , wherein the at least one magnetically conductive material film has a thickness between approximately 30 μm and 38 μm and a diameter between approximately 800 μm and 900 μm. 5 . The electronic component package of claim 1 , wherein the magnetic concentrator provides a magnetic coupling greater than 0.41 mT / A when operating at a current greater than 200 A.

6. A method for manufacturing an electronic component package; forming an integrated circuit (IC) die on a lead frame configured to conduct an electric current, the IC die being configured to sense a magnetic field generated by the electric current; forming at least one magnetic conductive material film on the IC bare die; as well as At least one permalloy material layer is formed on the corresponding at least one magnetically conductive material film, and the at least one magnetically conductive material film is combined with the at least one permalloy material layer to provide a magnetic concentrator, which provides concentration of the magnetic field.

7. The method of claim 6 , wherein each of the at least one permalloy layer has a first surface opposite to a second surface of each corresponding magnetically permeable material film of the at least one magnetically permeable material film, wherein the first surface and the second surface have different surface areas.

8. The method of claim 6, wherein the at least one magnetically conductive material film has a thickness between about 20 μm and 25 μm and a diameter between about 900 μm and 1000 μm, wherein the at least one permalloy material layer has a thickness between about 95 μm and 105 μm and a diameter between about 600 μm and 900 μm.

9. The method of claim 6, wherein the at least one film of magnetically permeable material has a thickness between approximately 30 μm and 38 μm and a diameter between approximately 800 μm and 900 μm.

10. The method of claim 6, wherein the magnetic concentrator provides a magnetic coupling greater than 0.41 mT / A when operating at a current greater than 200 A.

11. A Hall sensor system comprising: a lead frame configured to conduct electrical current; an integrated circuit (IC) die formed on the lead frame, the IC die being configured to sense a magnetic field generated by the current; at least one magnetically conductive material film formed on the IC die to provide concentration of the magnetic field; as well as At least one permalloy material layer is formed on the corresponding at least one magnetically conductive material film, and the at least one magnetically conductive material film and the at least one permalloy material layer are combined to provide a magnetic concentrator, which provides concentration of the magnetic field.

12. The Hall sensor system of claim 11 , wherein each of the at least one permalloy layer has a first surface opposite to a second surface of each corresponding magnetically permeable material film of the at least one magnetically permeable material film, wherein the first surface and the second surface have different surface areas.

13. The Hall sensor system of claim 11 , wherein the at least one magnetically conductive material film has a thickness between approximately 20 μm and 25 μm and a diameter between approximately 900 μm and 1000 μm, wherein the at least one permalloy material layer has a thickness between approximately 95 μm and 105 μm and a diameter between approximately 600 μm and 900 μm.

14. The Hall sensor system of claim 11, wherein the at least one film of magnetically permeable material has a thickness between approximately 30 μm and 38 μm and a diameter between approximately 800 μm and 900 μm. 15 . The Hall sensor system of claim 11 , wherein the magnetic concentrator provides a magnetic coupling greater than 0.41 mT / A when operating at a current greater than 200 A.

16. A method for manufacturing a Hall sensor system, the method comprising: forming a lead frame configured to conduct electrical current; Manufacturing an integrated circuit (IC) bare die on the lead frame; forming at least one magnetic conductive material film on the IC bare die; forming at least one magnetic concentrator on the corresponding at least one magnetically permeable material film, wherein the IC die, the at least one magnetically permeable material film, and the at least one magnetic concentrator are combined to form a Hall sensor; as well as The Hall sensor is provided on the lead frame.

17. The method of claim 16, wherein each of the at least one permalloy layer has a first surface opposite a second surface of each corresponding magnetically permeable material film of the at least one magnetically permeable material film, wherein the first surface and the second surface have different surface areas.

18. The method of claim 16, wherein the at least one magnetically conductive material film has a thickness between about 20 μm and 25 μm and a diameter between about 900 μm and 1000 μm, wherein the at least one permalloy material layer has a thickness between about 95 μm and 105 μm and a diameter between about 600 μm and 900 μm.

19. The method of claim 18, wherein the at least one film of magnetically permeable material has a thickness between approximately 30 μm and 38 μm and a diameter between approximately 800 μm and 900 μm.

20. The method of claim 16, wherein the magnetic concentrator provides a magnetic coupling greater than 0.41 mT / A when operating at a current greater than 200 A.

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