Packaging adhesive film for perovskite assembly and photovoltaic assembly and application thereof

Abstract

The invention provides a packaging adhesive film for a perovskite assembly and a photovoltaic assembly and application thereof. The adhesive film comprises organic ammonium salt and a packaging adhesive film base material, wherein the organic ammonium salt is selected from one or more of diammonium halogen ammonium salt, phenyl halogen ammonium salt and thiophene halogen ammonium salt. According to the invention, the organic ammonium salt is used as the passivation material and is combined with the adhesive film matrix material to prepare the packaging adhesive film, so that the process step of post-passivation of the perovskite assembly and corresponding expensive vacuum equipment can be omitted, and the packaging cost is greatly reduced while the service life of the perovskite assembly is prolonged.

Description

Technical Field

[0001] The present invention relates to the field of solar cells, and in particular to an encapsulation film for a perovskite component and a photovoltaic component and application thereof. Background Art

[0002] As photovoltaics continue to improve efficiency and reduce costs, perovskite cells, with their low cost and high efficiency, have made significant progress in the past decade. From an initial energy conversion efficiency of 3.8% when they were invented in 2009, after more than a decade of development, this efficiency has reached 26.7%, demonstrating the potential for mass production and application.

[0003] However, perovskites currently have a lifespan of only about ten years, which is far from enough to meet the requirement for PV modules to operate stably outdoors for 25 years. Packaging reliability is a key factor affecting the lifespan of perovskite modules in outdoor conditions.

[0004] In existing perovskite module packaging processes, the grooves in the perovskite module are typically machined using lasers. This laser processing creates numerous defects on the sidewalls of the grooves, which serve as active sites for perovskite cells to be attacked by impurities in the film, water, and oxygen from the outside world. During and after the groove filling process in existing encapsulation films, small molecules of impurities in the film, as well as water and oxygen from the outside world, can permeate through the film and butyl adhesive, diffuse to the defective surfaces on the groove sidewalls, and combine with the defects, leading to decomposition and failure of the perovskite cell materials, thereby affecting the energy conversion efficiency, long-term stability, and lifespan of the perovskite module.

[0005] While some technologies for trench sidewall passivation exist, such as the ALD+mask method, which deposits a layer of Al2O3 on the trench sidewalls to block water and oxygen, Al2O3 only has a field passivation effect and is difficult to effectively passivate chemical defects on the sidewalls. Furthermore, the ALD+mask method is complex, requires a high vacuum, and is a very slow process, making it difficult to apply on a large scale in mass production. Summary of the Invention

[0006] To address the aforementioned issues with the prior art, the present invention provides an encapsulation film for perovskite modules, photovoltaic modules, and applications thereof. By combining an organic ammonium salt as a passivation material with a film matrix material to prepare the encapsulation film, the present invention eliminates the post-passivation process for perovskite modules and the associated expensive vacuum equipment, thereby extending the lifespan of the perovskite modules while significantly reducing packaging costs.

[0007] The first aspect of the present invention provides an encapsulation film for a perovskite component, wherein the film comprises an organic ammonium salt and an encapsulation film matrix material, wherein the organic ammonium salt is selected from one or more of diammonium halogen ammonium salts, phenyl halogen ammonium salts and thiophene halogen ammonium salts.

[0008] In one or more embodiments, the encapsulating film base material is selected from one or more of EVA, ethylene-methacrylic acid copolymer sodium salt, TPO, TPU, PIB and POE.

[0009] In one or more embodiments, the diammonium halide salt has the structural formula: [H3N + -RN + H3]X2; wherein R represents a C1-6 alkylene group; and X represents F, Cl, Br or I.

[0010] In one or more embodiments, the diammonium halide salt is selected from one or more of diammonium diiodide, 1,3-propylenediamine iodide, and 1,4-butylenediamine dihydrogen iodide.

[0011] In one or more embodiments, the phenyl ammonium halide salt has the structural formula [Ph-RN + H3]X - ; wherein Ph represents a phenyl group or a halogenated phenyl group, connected to the nitrogen atom directly or through a linking group R; R is a linking group, representing a C1-6 alkylene group; X represents F, Cl, Br or I.

[0012] In one or more embodiments, the phenylammonium halide salt is selected from phenylethylammonium iodide and / or 4-fluoro-phenylethylammonium iodide.

[0013] In one or more embodiments, the structural formula of the thiophene halide ammonium salt is [Th-RN + H3]X - ; Wherein, Th represents a thiophene ring group or a halogenated thiophene ring group, connected to the nitrogen atom directly or through a linking group R; R is a linking group, representing a C1-6 alkylene group; X represents F, Cl, Br or I.

[0014] In one or more embodiments, the thiophene-based halide ammonium salt is selected from 2-thienylmethylammonium iodide and / or 2-thienylethylammonium iodide.

[0015] In one or more embodiments, the mass concentration of the organic ammonium salt is 1-20 mg / m 2 or 1–10 mg / m 2 .

[0016] In one or more embodiments, the organic ammonium salt is present in the packaging film for the perovskite device in the form of a mixture with a packaging film matrix material.

[0017] In one or more embodiments, the mass concentration of the organic ammonium salt is 1-20 mg / m 2 .

[0018] In one or more embodiments, the organic ammonium salt covers the encapsulation film base material in the form of a passivation layer.

[0019] In one or more embodiments, the mass concentration of the organic ammonium salt is 1-10 mg / m 2 .

[0020] A second aspect of the present application provides a photovoltaic module comprising the perovskite module encapsulation film as described in any one of the embodiments herein.

[0021] A third aspect of the present application provides a method for passivating the groove sidewall of a perovskite module, the method comprising the steps of encapsulating the perovskite module with the perovskite module encapsulation film as described in any one of the embodiments herein and the perovskite module using a lamination process, the lamination causing the perovskite module encapsulation film material to melt and fill into the groove of the perovskite module to achieve passivation of the groove sidewall by the organic ammonium salt in the film material.

[0022] A fourth aspect of the present application provides the use of an organic ammonium salt in a perovskite module encapsulation film, the organic ammonium salt being selected from one or more of a diammonium halide ammonium salt, a phenyl halide ammonium salt and a thienyl halide ammonium salt.

[0023] In one or more embodiments, the diammonium halide ammonium salt has a structural formula of [H3N + -R-N + H3]X2; wherein R represents a C1-6 alkylene group; and X represents F, Cl, Br or I.

[0024] In one or more embodiments, the phenyl halide ammonium salt has a structural formula of [Ph-R-N + H3]X - ; wherein Ph represents a phenyl group or a halogenated phenyl group; R represents a C1-6 alkylene group; and X represents F, Cl, Br or I.

[0025] In one or more embodiments, the thienyl halide ammonium salt has a structural formula of [Th-R-N + H3]X - ; wherein Th represents a thienyl ring or a halogenated thienyl ring group; R represents a C1-6 alkylene group; and X represents F, Cl, Br or I.

[0026] In one or more embodiments, the organic ammonium salt is selected from one or more of EDAI (diammonium diiodide), PDAI (1,3-propanediamine iodide), BDAI (1,4-butanediamine dihydroammonium iodide), PEAI (phenethylammonium iodide), FPEAI (4-fluoro-phenylethylammonium iodide), 2-TMAI (2-thienylmethylammonium iodide) and 2-TEAI (2-thienylethylammonium iodide).

[0027] A fifth aspect of the present invention provides the use of an organic ammonium salt in passivating the sidewalls of a perovskite component trench, wherein the organic ammonium salt is selected from one or more of diammonium halogen ammonium salts, phenyl halogen ammonium salts, and thiophene halogen ammonium salts.

[0028] In one or more embodiments, the diammonium halide salt has the structural formula [H3N + -RN + H3]X2; wherein R represents a C1-6 alkylene group; and X represents F, Cl, Br or I.

[0029] In one or more embodiments, the phenyl ammonium halide salt has the structural formula [Ph-RN + H3]X - ; wherein Ph represents phenyl or halogenated phenyl; R represents C1-6 alkylene; X represents F, Cl, Br or I.

[0030] In one or more embodiments, the structural formula of the thiophene halide ammonium salt is [Th-RN + H3]X - ; wherein Th represents a thiophene ring or a halogenated thiophene ring group; R represents a C1-6 alkylene group; and X represents F, Cl, Br or I.

[0031] In one or more embodiments, the organic ammonium salt is selected from one or more of EDAI (diammonium diiodide), PDAI (1,3-propylenediamine iodide), BDAI (1,4-butylenediamine dihydrogen iodide), PEAI (phenylethylammonium iodide), FPEAI (4-fluoro-phenylethylammonium iodide), 2-TMAI (2-thienylmethylammonium iodide) and 2-TEAI (2-thienylethylammonium iodide).

[0032] Beneficial effects of the present invention:

[0033] By combining organic ammonium salt as a passivation material with the film matrix material to prepare the encapsulation film, and then encapsulating the encapsulation film with the perovskite component, the passivation material in the film can passivate the defects of the groove sidewalls of the perovskite component, so that the groove sidewall passivation and battery encapsulation are completed in one process step, eliminating the process step of post-passivation of the perovskite component and the corresponding expensive vacuum equipment, thereby improving the life of the perovskite component and significantly reducing the packaging cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 Schematic diagram of the structure of an inverted perovskite solar cell in the prior art.

[0035] Figure 2 Schematic diagram of the structure of the packaging film composite layer prepared in Example 1.

[0036] Figure 3 Schematic diagram of the structure of the encapsulation film prepared in Example 3.

[0037] Explanation of the accompanying reference numerals: 1 is a glass substrate, 2 is a transparent conductive oxide layer, 3 is a first carrier transport layer, 4 is a perovskite layer, 5 is a second carrier transport layer, 6 is a back electrode, 7 is an encapsulation film, 8 is an edge sealing adhesive, 9 is an encapsulation backplane; 71 is a film matrix material, 72 is a passivation material; 75 is another passivation material. DETAILED DESCRIPTION

[0038] To facilitate understanding of the features and effects of the present invention by those skilled in the art, the following provides a general description and definition of the terms and expressions used herein. Unless otherwise indicated, all technical and scientific terms used herein have the ordinary meanings as understood by those skilled in the art with respect to the present invention. In the event of conflict, the definitions herein shall prevail.

[0039] The theories or mechanisms described and disclosed herein, whether correct or incorrect, should not limit the scope of the present invention in any way, that is, the present invention can be implemented without being limited by any specific theory or mechanism.

[0040] Herein, “comprising,” “including,” “containing” and similar terms encompass the meanings of “consisting essentially of” and “consisting of,” for example, when “A comprises B and C” is disclosed herein, “A consists essentially of B and C” and “A consists of B and C” should be deemed to have been disclosed herein.

[0041] Throughout this document, all features, such as values, amounts, amounts, and concentrations, specified in numerical ranges or percentage ranges are provided for simplicity and convenience only. Accordingly, the description of numerical ranges or percentage ranges should be considered to encompass and specifically disclose all possible subranges and individual values ​​within those ranges (including integers and fractions).

[0042] In this document, unless otherwise specified, percentage refers to mass percentage and ratio refers to mass ratio.

[0043] Herein, when describing embodiments or examples, it should be understood that they are not intended to limit the present invention to these embodiments or examples. On the contrary, all alternatives, modifications and equivalents of the methods and materials described herein are encompassed within the scope defined by the claims.

[0044] In this document, for the sake of brevity, not all possible combinations of the various technical features in each embodiment or example are described. Therefore, as long as there are no contradictions in the combination of these technical features, the various technical features in each embodiment or example can be combined in any way, and all possible combinations should be considered to be within the scope of this specification.

[0045] The structural diagram of the existing packaged perovskite component is as follows Figure 1 As shown. Figure 1 In the figure, 1 is the glass substrate, 2 is the transparent conductive oxide layer, 3 is the first carrier transport layer, 4 is the perovskite layer, 5 is the second carrier transport layer, 6 is the back electrode, 7 is the encapsulation film, 8 is the edge sealant, and 9 is the encapsulation backplane. The encapsulation film 7 is POE material, 8 is butyl adhesive, and P3 is a groove. Figure 1 The groove shown in P3 is the groove used to separate the sub-cells after the perovskite component is laser-scribed. The groove is exposed before packaging. During lamination packaging, the POE film 7 is melted and filled into the P3 groove, and then the entire component edge is sealed with butyl glue to achieve complete packaging.

[0046] However, in existing perovskite module packaging processes, the P3 grooves are typically laser-machined. This laser processing creates numerous defects on the sidewalls of the P3 grooves, which serve as active sites for perovskite cells to be attacked by impurities in the film, water, and oxygen from the outside world. During and after the encapsulation process, small molecules of impurities in the film, as well as water and oxygen from the outside world, can penetrate the film 7 and butyl rubber 8, diffuse to these defective surfaces on the P3 sidewalls, and combine with the defects, leading to decomposition and failure of the perovskite cell materials. This, in turn, affects the energy conversion efficiency, long-term stability, and lifespan of the perovskite module.

[0047] The main purpose of this invention is to provide the use of an organic ammonium salt in a perovskite module encapsulation film. The organic ammonium salt acts as a passivation material and is integrated with the film. When the film material is melted and filled into the grooves of the perovskite module, the passivation material in the film passivates the defects on the groove sidewalls, achieving the technical effect of completing the groove sidewall passivation and battery encapsulation in a single process step.

[0048] The present invention provides an encapsulation film for a perovskite component. The film comprises an encapsulation film matrix material and an organic ammonium salt.

[0049] In the present invention, the organic ammonium salt is selected from one or more of diammonium halogen ammonium salts, phenyl halogen ammonium salts and thiophene halogen ammonium salts.

[0050] In the present invention, the diammonium halogen ammonium salt is a halogen diammonium salt containing two ammonium ions (-NH3+) in one molecule. In some embodiments, the structural formula of the diammonium halogen ammonium salt can be: [H3N + -RN + H3]X2;

[0051] Wherein, R represents a C1-6 alkylene group;

[0052] X represents F, CI, Br or I.

[0053] In some embodiments, the bis-ammonium halide salt is selected from one or more of EDAI (diiodonium bis-ammonium), PDAI (1,3-propanediamine iodide), and BDAI (1,4-butanediamine dihydroammonium iodide).

[0054] In the present application, the phenyl halide ammonium salt is a benzene or an aromatic hydrocarbon halide ammonium salt having a side chain length of up to 6 carbon atoms containing one ammonium ion. In some embodiments, the phenyl halide ammonium salt can have the formula: [Ph-R-N + H3]X - ;

[0055] wherein Ph represents a phenyl or a halogenated phenyl group, attached to the nitrogen atom directly or via a linking group R;

[0056] R is a linking group, representing a C1-6 alkylene group;

[0057] X represents F, CI, Br or I.

[0058] In some embodiments, the phenyl halide ammonium salt is PEAI (phenethylammonium iodide) and / or FPEAI (4-fluoro-phenylethylammonium iodide).

[0059] In the present application, the phenyl halide ammonium salt is a benzene or an aromatic hydrocarbon halide ammonium salt having a side chain length of up to 6 carbon atoms containing one ammonium ion. In some embodiments, the phenyl halide ammonium salt can have the formula: [Ph-R-N + H3]X - ;

[0060] wherein Th represents a thiophene ring group or a halogenated thiophene ring, attached to the nitrogen atom directly or via a linking group R;

[0061] R is a linking group, representing a C1-6 alkylene group;

[0062] X represents F, CI, Br or I.

[0063] In some embodiments, the phenyl halide ammonium salt is PEAI (phenethylammonium iodide) and / or FPEAI (4-fluoro-phenylethylammonium iodide).

[0064] Encapsulant film base materials suitable for use in the present application include, but are not limited to, EVA (ethylene-vinyl acetate copolymer), Surlyn (sodium salt of ethylene-methacrylic acid copolymer), TPO (thermoplastic polyolefin elastomer), TPU (thermoplastic polyurethane elastomer), PIB (polyisobutylene), and POE (polyolefin elastomer), among others.

[0065] In some embodiments, the organic ammonium salt is coated on the encapsulation film substrate in the form of a passivation layer. Therefore, in some embodiments, the encapsulation film for perovskite components comprises an encapsulation film substrate and a passivation layer coated on the encapsulation film substrate, wherein the passivation layer comprises the organic ammonium salt described herein.

[0066] In some embodiments, the encapsulation film matrix material is selected from EVA and / or POE, and the organic ammonium salt is selected from one or more of EDAI (diammonium diiodide), PDAI (1,3-propylenediamine iodide), BDAI (1,4-butylenediamine dihydrogen ammonium iodide), PEAI (phenylethylammonium iodide), FPEAI (4-fluoro-phenylethylammonium iodide), 2-TMAI (2-thienylmethylammonium iodide) and 2-TEAI (2-thienylethylammonium iodide).

[0067] In some embodiments, the mass concentration of the organic ammonium salt as the passivation layer on the encapsulation film substrate is ≤10 mg / m 2 , such as 1mg / m 2 -8 mg / m 2 .

[0068] In some specific embodiments, the encapsulating film matrix material is selected from EVA and / or POE, the organic ammonium salt is selected from EDAI, and the concentration of EDAI is 1-10 mg / m 2 .

[0069] In some specific embodiments, the encapsulating film matrix material is selected from EVA and / or POE, the organic ammonium salt is selected from one or more of PEAI, 2-TMAI and PDAI, and the concentration of the organic ammonium salt is 6-10 mg / m 2 .

[0070] The organic ammonium salt in this article is coated on the inner side of the film substrate (the side close to the perovskite cell) through a co-spraying process to obtain the above-mentioned encapsulation film composite layer for the perovskite component.

[0071] In some embodiments, the method for preparing the above-mentioned encapsulation film for perovskite components includes the following steps: mixing the organic ammonium salt and solvent as described herein to obtain a passivation solution, and then coating the solution on the encapsulation film substrate to obtain the composite layer of the encapsulation film for perovskite components of the present invention.

[0072] In some embodiments, the solvent is one or more of chlorobenzene, toluene, diethyl ether, isopropyl alcohol, ethyl acetate, and gamma-butyrolactone.

[0073] In some embodiments, the coating is carried out by spraying. The specific method of spraying is not particularly limited, for example, ultrasonic spraying. The coating amount of the organic ammonium salt on the encapsulation film substrate can be ≤10 mg / m 2, such as 1-8 mg / m 2 .

[0074] In other embodiments, the organic ammonium salt is present in the packaging film for the perovskite component in the form of a mixture with the packaging film matrix material.

[0075] In some embodiments, the encapsulation film matrix material is selected from EVA and / or POE, and the organic ammonium salt is selected from one or more of EDAI (diammonium diiodide), BDAI (1,4-butanediamine dihydrogen iodide), FPEAI (4-fluoro-phenylethylammonium iodide) and 2-TEAI (2-thienylethylammonium iodide).

[0076] In some embodiments, the mass concentration of the organic ammonium salt may be ≤20 mg / m 2 Such as 1-18 mg / m 2 .

[0077] In some specific embodiments, the encapsulating film matrix material is selected from EVA and / or POE, the organic ammonium salt is selected from FPEAI, and the concentration of FPEAI is 1-20 mg / m 2 .

[0078] In some specific embodiments, the encapsulating film matrix material is selected from EVA and / or POE, the organic ammonium salt is selected from one or more of EDAI, BDAI and 2-TEAI, and the concentration of the organic ammonium salt is 16-20 mg / m 2 .

[0079] The encapsulating film for the perovskite assembly of the present invention can be obtained by mixing the organic ammonium salt described herein with the encapsulating film matrix material and then forming a film.

[0080] In some embodiments, the method for preparing the encapsulating film for perovskite components of the present invention comprises the following steps: when using the encapsulating film matrix material particles to manufacture the encapsulating film, the organic ammonium salt described herein is added to the raw material particles to prepare the encapsulating film for perovskite components of the present invention.

[0081] In some embodiments, the perovskite module encapsulation film of the present invention has a mass per unit area of ​​250-450 g / m 2 , such as 300-400g / m 2 .

[0082] A release film may be disposed on the packaging film of the present invention to protect the packaging film from being contaminated or damaged.

[0083] The present invention also provides a photovoltaic module, which includes the packaging film for the perovskite module described herein and the perovskite module.

[0084] A perovskite assembly suitable for the present application can be a perovskite solar cell. In some embodiments, the perovskite solar cell comprises a glass substrate, a transparent conductive oxide layer, a first carrier transport layer, a perovskite layer, a second carrier transport layer, and a back electrode. The structure of a perovskite solar cell suitable for the present application can be an inverted perovskite solar cell structure or a normal perovskite solar cell structure.

[0085] In some embodiments, a perovskite assembly of the present application can be a single junction perovskite cell / assembly, a four-terminal perovskite tandem cell / assembly, a two-terminal perovskite tandem cell / assembly, a perovskite-perovskite tandem cell / assembly.

[0086] The present application also provides use of an organic ammonium salt in the preparation of a perovskite assembly encapsulation adhesive film that achieves passivation of the trench sidewall, the organic ammonium salt being selected from one or more of a diammonium halide ammonium salt, a phenyl halide ammonium salt, and a thiophene halide ammonium salt.

[0087] In some embodiments, the diammonium halide ammonium salt, the phenyl halide ammonium salt, and the thiophene halide ammonium salt are each as described above.

[0088] In some embodiments, the organic ammonium salt is selected from one or more of EDAI (diammonium diiodide), PDAI (1,3-propanediamine iodide), BDAI (1,4-butanediamine dihydroammonium iodide), PEAI (phenethylammonium iodide), FPEAI (4-fluoro-phenylethylammonium iodide), 2-TMAI (2-thiophenemethylammonium iodide), and 2-TEAI (2-thiopheneethylammonium iodide).

[0089] The present application also provides use of an organic ammonium salt in passivating a perovskite assembly trench sidewall, the organic ammonium salt being selected from one or more of a diammonium halide ammonium salt, a phenyl halide ammonium salt, and a thiophene halide ammonium salt.

[0090] In some embodiments, the diammonium halide ammonium salt, the phenyl halide ammonium salt, and the thiophene halide ammonium salt are each as described above.

[0091] In some embodiments, the organic ammonium salt is selected from one or more of EDAI (diammonium diiodide), PDAI (1,3-propanediamine iodide), BDAI (1,4-butanediamine dihydroammonium iodide), PEAI (phenethylammonium iodide), FPEAI (4-fluoro-phenylethylammonium iodide), 2-TMAI (2-thiophenemethylammonium iodide), and 2-TEAI (2-thiopheneethylammonium iodide).

[0092] The present invention also provides a method for passivating the sidewalls of the grooves of a perovskite component, which includes the step of encapsulating the perovskite component encapsulation film and the perovskite component described in this article using a lamination process. The lamination melts the perovskite component encapsulation film material and then fills it into the grooves of the perovskite component to achieve passivation of the groove sidewalls by the organic ammonium salt in the film material.

[0093] In some embodiments, the lamination temperature may be 100-130° C., such as 115-125° C. The lamination holding time may be 5-15 min; such as 8-12 min.

[0094] The present invention will be described below by way of specific examples. It should be understood that these examples are merely illustrative and are not intended to limit the scope of the present invention. The methods, reagents, and materials used in the examples are, unless otherwise stated, conventional methods, reagents, and materials in the art. The starting compounds in the examples can all be purchased from commercial sources.

[0095] Example 1:

[0096] Dissolve EDAI (ammonium diiodide) in ethanol to obtain a passivation solution, wherein the concentration of EDAI is 1 mg / ml. Spray the passivation solution on a 400 g / m 2 The spraying amount is controlled at 10mg / m 2 (Calculated according to the effective content of EDAI), after spraying, a PET release film is placed on the coating to protect the passivation material layer from contamination. Figure 2 In the structure, 71 is the film matrix material EVA, and 72 is the passivation material EDAI (disammonium diiodide).

[0097] When in use, the adhesive film and the perovskite component are encapsulated through a lamination process. The lamination temperature is 120°C and the lamination holding time is 10 minutes.

[0098] Example 2

[0099] The only difference between this embodiment and embodiment 1 is that the spraying amount of the passivation material EDAI is 1 mg / m 2 The remaining operating conditions and steps are the same as those in Example 1.

[0100] Example 3

[0101] When using POE particles as the film matrix material to manufacture POE film, the passivation material EDAI (ammonium diiodide) is doped into the raw material particles at a doping concentration of 18 mg / m 2 Then, EDAI-doped EVA film was prepared by extrusion method, and the thickness of the film was 400 g / m 2The structure of the film is as follows: Figure 3 As shown, 71 is the film matrix material POE, and 75 is the passivation material EDAI.

[0102] When in use, the above-mentioned adhesive film and the perovskite component are encapsulated through a lamination process, with a lamination temperature of 110° C. and a lamination insulation time of 12 minutes.

[0103] Example 4

[0104] In this embodiment, the Figure 2 The structure described above, the film base material is 400g / m 2 The EVA film is made of PEAI (phenylethylammonium iodide) as the passivation material.

[0105] Dissolve PEAI in isopropyl alcohol solution to obtain a passivation solution, wherein the PEAI concentration is 0.5 mg / ml. Spray the passivation solution on the inside of the EVA film using ultrasonic spraying, and control the spraying amount to 8 mg / m 2 After spraying is completed, a PET release film is placed on the coating to protect the passivation material layer from contamination.

[0106] When in use, the adhesive film and the perovskite component are encapsulated through a lamination process. The lamination temperature is 120°C and the lamination holding time is 10 minutes.

[0107] Example 5

[0108] The only difference between this embodiment and embodiment 4 is that PEAI is replaced by 2-TMAI (2-thienylmethylammonium iodide). The remaining operating conditions and steps are the same as those in embodiment 4.

[0109] Example 6

[0110] The only difference between this embodiment and embodiment 4 is that the EVA film is replaced with a POE film. The remaining operating conditions and steps are the same as those in embodiment 4.

[0111] Example 7

[0112] The only difference between this embodiment and embodiment 3 is that EDAI is replaced by FPEAI, and the doping concentration is 20 mg / m 2 The remaining operating conditions and steps are the same as those in Example 3.

[0113] Example 8

[0114] The only difference between this embodiment and embodiment 3 is that EDAI is replaced by 2-TEAI and the doping concentration is changed to 20 mg / m 2 The remaining operating conditions and steps are the same as those in Example 3.

[0115] Example 9

[0116] The difference between this example and Example 1 is that EDAI is replaced by PDAI. The rest of the operating conditions and steps are the same as Example 1.

[0117] Example 10

[0118] The difference between this example and Example 3 is that EDAI is replaced by BDAI. The rest of the operating conditions and steps are the same as Example 3.

[0119] Example 11

[0120] The difference between this example and Example 3 is that EDAI is replaced by FPEAI, and the doping concentration is 1 mg / m 2 . The rest of the operating conditions and steps are the same as Example 3

[0121] Comparative Example 1

[0122] The difference between Comparative Example 1 and Example 1 is that EDAI (diiodo bisammonium) is replaced by BAI (n-butyl ammonium iodide). The rest of the operating conditions and steps are the same as Example 1.

[0123] Comparative Example 2

[0124] The difference between this comparative example and Example 1 is that the spraying amount of the passivation material EDAI is 11 mg / m 2 . The rest of the operating conditions and steps are the same as Example 1.

[0125] Comparative Example 3:

[0126] The difference between this comparative example and Example 3 is that the doping amount of the passivation material EDAI is 21 mg / m 2 . The rest of the operating conditions and steps are the same as Example 3.

[0127] Test Example 1

[0128] The perovskite cells encapsulated by the adhesive films prepared in Examples 1-10 and Comparative Examples 1-3 are subjected to cell efficiency test and T80 test.

[0129] The test of cell efficiency is a standard test, which is tested under the light intensity of AM1.5G and the temperature of 20°C.

[0130] The T80 test is a continuous maximum power point tracking test under the light intensity of AM1.5G, the temperature of 85°C, and the relative humidity of 85%, and the corresponding test time when the efficiency decays to 80% of the initial efficiency.

[0131] The relevant performance parameters of the perovskite battery encapsulated with the above-mentioned film are summarized in Table 1 below:

[0132] Table 1. Relevant performance parameters of encapsulated perovskite cells

[0133]

[0134]

[0135] Note: Double 85 refers to the conditions of 85°C temperature and 85% relative humidity. Double 85 is the standard condition for testing the accelerated aging life of photovoltaic cells.

[0136] As can be seen from Table 1, compared with the film in Comparative Example 1 in which BAI (n-butylammonium iodide) is added, Examples 1-11 add the passivation material of the present invention to the encapsulation film, and the encapsulation film obtained is applied to the perovskite battery assembly, and its battery efficiency and T80 life are higher.

[0137] Compared with Comparative Example 2, Examples 1-2, 4-6 and 9 are the passivation materials of the present invention are coated on the inner side of the film substrate by a co-spraying process, and the coating amount of the passivation material on the substrate is ≤10mg / m 2 The encapsulation film produced is used in perovskite batteries, and its battery efficiency and T80 life are higher.

[0138] Compared with comparative example 3, examples 3, 7-8, 10 and 11 are prepared by doping the passivation material of the present invention into the film matrix material (doping concentration ≤ 20 mg / m 2 ), and is made together with the film matrix material into an encapsulation film. The encapsulation film prepared is used in perovskite batteries, and the battery efficiency and T80 life are higher.

Claims

1. A packaging film for a perovskite component, characterized in that: The adhesive film comprises an organic ammonium salt and an encapsulating adhesive film matrix material, wherein the organic ammonium salt is selected from one or more of diammonium halogen ammonium salts, phenyl halogen ammonium salts and thiophene halogen ammonium salts.

2. The encapsulation film for perovskite components according to claim 1, wherein: The encapsulation film matrix material is selected from one or more of EVA, ethylene-methacrylic acid copolymer sodium salt, TPO, TPU, PIB and POE.

3. The encapsulation film for perovskite components according to claim 1, wherein: The structural formula of the diammonium halogen ammonium salt is: [H3N + -RN + H3]X2; Wherein, R represents a C1-6 alkylene group; X represents F, Cl, Br or I.

4. The encapsulation film for perovskite components according to claim 3, wherein: The diammonium halide ammonium salt is selected from one or more of diammonium diiodide, 1,3-propylenediamine iodide and 1,4-butylenediamine dihydrogen iodide.

5. The encapsulation film for perovskite components according to claim 1, wherein: The structural formula of the phenyl halogen ammonium salt is [Ph-RN + H3]X - ; Wherein, Ph represents phenyl or halogenated phenyl, connected to the nitrogen atom directly or through a linking group R; R is a linking group, representing a C1-6 alkylene group; X represents F, Cl, Br or I.

6. The encapsulation film for perovskite components according to claim 5, wherein: The phenylammonium halide salt is selected from phenylethylammonium iodide and / or 4-fluoro-phenylethylammonium iodide.

7. The encapsulation film for perovskite components according to claim 1, wherein: The structural formula of the thiophene halogen ammonium salt is [Th-RN + H3]X - ; Wherein, Th represents a thiophene ring group or a halogenated thiophene ring group, connected to the nitrogen atom directly or through a linking group R; R is a linking group, representing a C1-6 alkylene group; X represents F, Cl, Br or I.

8. The encapsulation film for perovskite components according to claim 7, wherein: The thiophene-based halogen ammonium salt is selected from 2-thienylmethylammonium iodide and / or 2-thienylethylammonium iodide.

9. The encapsulation film for perovskite components according to claim 1, wherein: The organic ammonium salt exists in the packaging film for the perovskite component in the form of a mixture with the packaging film matrix material.

10. The encapsulation film for perovskite components according to claim 9, wherein: The mass concentration of the organic ammonium salt is 1-20 mg / m 2 .

11. The encapsulation film for perovskite components according to claim 1, wherein: The organic ammonium salt is covered on the packaging film base material in the form of a passivation layer.

12. The encapsulation film for perovskite components according to claim 11, wherein: The mass concentration of the organic ammonium salt is 1-10 mg / m 2 .

13. A photovoltaic module, characterized in that: It comprises the packaging film for the perovskite component according to any one of claims 1 to 12.

14. A method for passivating the sidewalls of a perovskite component trench, characterized in that: The method comprises the step of encapsulating the perovskite component according to any one of claims 1 to 12 with an encapsulation film and a perovskite component using a lamination process, wherein the lamination melts the perovskite component encapsulation film material and then fills it into the groove of the perovskite component to achieve passivation of the groove sidewall by the organic ammonium salt in the film material. 15.Select from the following applications: (1) Use of an organic ammonium salt in the preparation of a perovskite component encapsulation film for achieving trench sidewall passivation, wherein the organic ammonium salt is selected from one or more of diammonium halogen ammonium salts, phenyl halogen ammonium salts, and thiophene halogen ammonium salts; (2) Application of an organic ammonium salt in passivating the sidewalls of a perovskite component trench, wherein the organic ammonium salt is selected from one or more of diammonium halogen ammonium salts, phenyl halogen ammonium salts, and thiophene halogen ammonium salts.

16. The use according to claim 15, characterized in that The structural formula of the diammonium halogen ammonium salt is [H3N + -RN + H3]X2; wherein R represents a C1-6 alkylene group; X represents F, Cl, Br or I; The structural formula of the phenyl halogen ammonium salt is [Ph-RN + H3]X - ; wherein Ph represents phenyl or halogenated phenyl; R represents C1-6 alkylene; X represents F, Cl, Br or I; The structural formula of the thiophene halogen ammonium salt is [Th-RN + H3]X - ; wherein Th represents a thiophene ring group or a halogenated thiophene ring group; R represents a C1-6 alkylene group; and X represents F, Cl, Br or I.

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