Magnetic random access memory (MRAM) detection method based on magnetic field injection and optical detection coupling technology

Abstract

The invention relates to an MRAM (Magnetic Random Access Memory) detection method based on a magnetic field injection and optical detection coupling technology. The method comprises the following steps: loading a to-be-detected MRAM sample to the center of a magnet coil wound by a magnetic domain; the current in the magnet coil is controlled, and the required magnetic field intensity and direction are loaded; observing the magnetic domain structure and the magnetization behavior of the MRAM sample by using an MOKE microscope, and recording the polarization change of the reflected light; measuring magnetization curves of the MRAM sample in different magnetic fields by using a VSM to obtain magnetic parameters; observing the morphology and magnetic characteristics of the surface of the MRAM sample by using an AFM, and detecting the magnetic force change in a magnetic force detection mode; observing a microstructure and a magnetic domain structure of the MRAM sample by using a TEM (Transmission Electron Microscope); and observing the magnetic domain structure and the magnetic characteristics of the surface of the MRAM sample by using the MFM.

Description

TECHNICAL FIELD

[0001] The application relates to an MRAM detection method based on a magnetic field injection and optical detection coupling technology, and belongs to the technical field of MRAM detection. BACKGROUND

[0002] Magnetic Random Access Memory (MRAM) is a new type of non-volatile memory technology, which has the advantages of high-speed reading and writing, low power consumption and good durability. In the working process of MRAM, magnetic field injection and optical detection are two key steps for reading and writing data.

[0003] The traditional MRAM detection method usually adopts separate magnetic field injection and optical detection equipment, and the two processes are relatively independent. Magnetic field injection usually changes the magnetic state of the memory element by applying a magnetic field through an electric current or a magnetic head. Optical detection uses an optical sensor to measure the change in the magnetic state of the memory element and converts it into an electrical signal for analysis and processing.

[0004] However, the traditional separate magnetic field injection and optical detection has some problems. First, due to the mismatch in position and size between the separate devices, it may be difficult to achieve accurate magnetic field injection and optical detection. Second, signal transmission and registration between separate devices may introduce noise and instability, affecting the accuracy and reliability of MRAM detection.

[0005] Due to the limitations of magnetic field injection (in order to ensure detection effect), while ensuring the coupling with optical detection (i.e. not conflicting with optical detection), how to scientifically inject magnetic field becomes the top priority. SUMMARY

[0006] In view of the deficiencies of the prior art, the application provides an MRAM detection method based on a magnetic field injection and optical detection coupling technology;

[0007] The application has important significance for improving the performance and reliability of MRAM detection. The coupling technology of the application closely combines magnetic field injection and optical detection together, and through sharing equipment and optimization design, a more accurate, stable and efficient MRAM detection process can be realized. Through this innovative application method, new breakthroughs and progress can be brought to the development and application of MRAM technology.

[0008] Term explanation:

[0009] MOKE microscope, magneto-optical Kerr microscope;

[0010] VSM, vibrating sample magnetometer;

[0011] AFM, atomic force microscope:

[0012] TEM, Lorentz transmission electron microscope;

[0013] MFM, magnetic force microscope.

[0014] The technical scheme of the present application is:

[0015] A MRAM detection method based on magnetic field injection and optical detection coupling technology, comprising:

[0016] Load the MRAM sample to be tested into the center of the magnetic coil with domain winding;

[0017] Control the current in the magnetic coil to load the required magnetic field strength and direction; during the loading of the magnetic field, the MRAM sample is simultaneously affected by magneto-optical effect, producing a detection effect triggered by magneto-optical phenomenon;

[0018] Use MOKE microscope to observe the domain structure and magnetization behavior of the MRAM sample, and record the polarization change of the reflected light;

[0019] Use VSM to measure the magnetization curve of the MRAM sample under different magnetic fields, and obtain the magnetic parameters;

[0020] Use AFM to observe the surface topography and magnetic characteristics of the MRAM sample, and detect the magnetic force change in the magnetic force detection mode;

[0021] Use TEM to observe the microstructure and domain structure of the MRAM sample;

[0022] Use MFM to observe the domain structure and magnetic characteristics of the MRAM sample surface.

[0023] According to the present application, the MOKE microscope is used to observe the domain structure and magnetization behavior of the MRAM sample, and the polarization change of the reflected light is recorded; comprising:

[0024] Place the MRAM sample to be tested on the stage of the MOKE microscope;

[0025] The MOKE microscope irradiates the MRAM sample surface with a laser beam and detects the polarization change of the reflected light; during the magnetic field injection, the MRAM sample is affected by magneto-optical effect, causing the polarization of the reflected light to change;

[0026] By observing and recording the polarization change of the reflected light, the domain structure, domain wall movement and other magnetization information of the MRAM sample are obtained.

[0027] According to the present application, the VSM is used to measure the magnetization curve of the MRAM sample under different magnetic fields, and the magnetic parameters are obtained; comprising:

[0028] Placing the MRAM sample to be measured in the measurement chamber of the VSM;

[0029] Loading magnetic field into the MRAM sample by a precision current controller; the precision current controller controls the current in the magnet coil, thus generating the required magnetic field strength and direction; during the loading of the magnetic field, the magnetization of the MRAM sample changes;

[0030] The VSM measures the magnetization of the MRAM sample under different magnetic fields, and records the magnetization curve;

[0031] By analyzing the magnetization curve, the magnetic parameters of the MRAM sample are obtained.

[0032] According to the present application, the AFM is used to observe the topography and magnetic characteristics of the MRAM sample surface, and the magnetic force change is detected in the magnetic force detection mode; including:

[0033] Placing the MRAM sample to be measured on the scanning table of the AFM;

[0034] The AFM scans the surface of the MRAM sample and measures the topography of the MRAM sample;

[0035] In the magnetic force detection mode, the AFM detects the magnetic force change on the surface of the MRAM sample;

[0036] By measuring the change of the magnetic force, the magnetic characteristics of the MRAM sample surface are observed.

[0037] According to the present application, the TEM is used to observe the microstructure and magnetic domain structure of the MRAM sample; including:

[0038] Placing the MRAM sample to be measured on the sample stage of the TEM;

[0039] By transmission of the electron beam, high-resolution microscopic images of the MRAM sample are obtained;

[0040] By analyzing these high-resolution microscopic images, the microstructure and magnetic domain structure of the MRAM sample are observed, and the magnetic properties of the MRAM sample are further studied.

[0041] According to the present application, the MFM is used to observe the magnetic domain structure and magnetic characteristics of the MRAM sample surface; including:

[0042] Placing the MRAM sample to be measured on the scanning table of the MFM;

[0043] The MFM scans the surface of the MRAM sample and measures the change of the magnetic field on the surface of the MRAM sample;

[0044] The MFM uses the magnetic force sensing part to detect the change of the magnetic field strength and direction on the surface of the MRAM sample;

[0045] By measuring the changes in the magnetic field, the magnetic domain structure and magnetic characteristics of the MRAM sample surface are observed.

[0046] The beneficial effects of the present application are:

[0047] 1. Precision and stability: The existing magnetic field injection and optical detection method has the problem of position and size mismatch in MRAM detection, resulting in poor precision and stability. The present application aims to provide a coupling technology to realize precise and stable magnetic field injection and optical detection, thereby improving the precision and reliability of MRAM detection.

[0048] 2. Efficiency and consistency: Traditional separate magnetic field injection and optical detection equipment may introduce signal transmission and registration problems, affecting the efficiency and consistency of MRAM detection. The present application aims to provide a coupling method to realize efficient and consistent magnetic field injection and optical detection by sharing equipment and optimizing design, thereby improving the efficiency and consistency of MRAM detection. BRIEF DESCRIPTION OF DRAWINGS

[0049] Figure 1 is a schematic diagram of magnetic field injection;

[0050] Figure 2 is a schematic diagram of a complete magnetic work structure; DETAILED DESCRIPTION

[0051] The present application is further limited by the following description and examples in conjunction with the accompanying drawings and embodiments, but is not limited thereto.

[0052] Example 1

[0053] A MRAM detection method based on magnetic field injection and optical detection coupling technology, comprising:

[0054] loading the MRAM sample to be tested into the center of the magnetic coil with magnetic domain winding;

[0055] The magnetic field injection method has the following technical advantages:

[0056] Uniform magnetic field loading: The magnetic field generated by the magnetic coil can be uniformly loaded into the sample, ensuring that the sample is affected by a uniform magnetic field.

[0057] Adjustable magnetic field strength: By adjusting the current of the magnetic coil, the strength of the magnetic field can be accurately controlled to meet different experimental needs.

[0058] The current in the magnet coil is controlled by a precision current controller to load the required magnetic field strength and direction; during the loading of the magnetic field, the MRAM sample is simultaneously affected by magneto-optical effect, producing a detection effect triggered by magneto-optical phenomenon; the key is to control the precision and stability of the current to ensure that the loaded magnetic field strength and direction meet the requirements. The effective coupling of magnetic field and optical detection is realized to ensure that the magneto-optical effect can be accurately reflected in the optical detection signal.

[0059] The magnetic domain structure and magnetization behavior of the MRAM sample are observed using the MOKE microscope, and the polarization change of the reflected light is recorded;

[0060] The magnetization curve of the MRAM sample under different magnetic fields is measured using VSM, and the magnetic parameters are obtained;

[0061] The surface topography and magnetic characteristics of the MRAM sample are observed using AFM, and the magnetic force change is detected in the magnetic force detection mode;

[0062] The microstructure and magnetic domain structure of the MRAM sample are observed using TEM;

[0063] The magnetic domain structure and magnetic characteristics of the surface of the MRAM sample are observed using MFM.

[0064] Through the combination of the above instruments and process, the magnetization behavior, magnetic domain structure and magnetic characteristics of the MRAM sample can be comprehensively understood, providing a powerful means and method for the detection and research of MRAM.

[0065] The magneto-optical phenomenon is used to realize the detection of the magnetic properties of the sample. This optical detection method has the following technical advantages:

[0066] Direct observation of magnetization behavior: through the magneto-optical effect, the magnetization behavior of the sample under an external magnetic field can be directly observed, including the magnetic domain structure, magnetic domain wall movement and other information.

[0067] Non-invasive measurement: optical detection is a non-invasive measurement method that does not damage the sample or interfere with its magnetic properties, maintaining the integrity of the sample.

[0068] High resolution: optical detection technology can provide high-resolution observation capabilities and can capture the microscopic magnetic changes of the sample.

[0069] The present application realizes accurate control of the magnetic field loading process through a precision current controller throughout the entire set of equipment. This control method has the following technical advantages:

[0070] High precision control: the precision current controller can provide high-precision current output, so that the magnetic field loading process can be accurately controlled, ensuring the repeatability and accuracy of the experiment.

[0071] Real-time adjustment: Through software control, the current output can be adjusted in real time, realizing instant adjustment of the magnetic field strength to meet experimental needs.

[0072] The present application integrates magnetic field injection and optical detection: this method combines the two steps of magnetic field injection and optical detection together, by loading the sample into the center of the magnet coil with domain winding, so that the sample is simultaneously affected by magneto-optical effect. This integrated method simplifies the experimental process and equipment configuration, and improves the efficiency.

[0073] Example 2

[0074] A MRAM detection method based on the coupling technology of magnetic field injection and optical detection according to example 1, the difference lies in:

[0075] Using MOKE microscope to observe the domain structure and magnetization behavior of MRAM sample, and recording the polarization change of reflected light; including:

[0076] Place the MRAM sample to be tested on the stage of the MOKE microscope;

[0077] The MOKE microscope irradiates the MRAM sample surface with a laser beam and detects the polarization change of the reflected light; during the process of magnetic field injection, the MRAM sample is affected by magneto-optical effect, resulting in a change in the polarization of the reflected light;

[0078] By observing and recording the polarization change of the reflected light, the domain structure, domain wall movement and other magnetization information of the MRAM sample are obtained.

[0079] Using VSM to measure the magnetization curve of MRAM sample under different magnetic fields, and obtaining magnetic parameters; including:

[0080] Place the MRAM sample to be tested in the measurement chamber of the VSM;

[0081] Load magnetic field into the MRAM sample through a precision current controller; the precision current controller controls the current in the magnet coil, thereby generating the required magnetic field strength and direction; during the process of loading magnetic field, the magnetization intensity of the MRAM sample changes;

[0082] VSM measures the magnetization intensity of the MRAM sample under different magnetic fields and records the magnetization curve;

[0083] By analyzing the magnetization curve, the magnetic parameters of the MRAM sample are obtained, such as saturation magnetization, coercivity, etc.

[0084] Using AFM to observe the topography and magnetic characteristics of the MRAM sample, and detecting the magnetic force change in the magnetic force detection mode; including:

[0085] Placing the MRAM sample to be tested on the scanning stage of the AFM;

[0086] Scanning the surface of the MRAM sample with the AFM to measure the topographical profile of the MRAM sample;

[0087] In the magnetic force detection mode, the AFM detects the change in magnetic force on the surface of the MRAM sample;

[0088] By measuring the change in magnetic force, the magnetic features on the surface of the MRAM sample are observed, such as the domain structure and the position of the domain wall.

[0089] Using the TEM to observe the microstructure and domain structure of the MRAM sample; including:

[0090] Placing the MRAM sample to be tested on the sample stage of the TEM;

[0091] By transmission of the electron beam, high-resolution micrographs of the MRAM sample are obtained;

[0092] By analyzing these high-resolution micrographs, the microstructure and domain structure of the MRAM sample are observed, and further study of the magnetic properties of the MRAM sample is conducted.

[0093] Using the MFM to observe the domain structure and magnetic features on the surface of the MRAM sample; including:

[0094] Placing the MRAM sample to be tested on the scanning stage of the MFM;

[0095] The MFM scans the surface of the MRAM sample and measures the change in magnetic field on the surface of the MRAM sample;

[0096] The MFM utilizes the magnetic force sensing part to detect the change in magnetic field strength and direction on the surface of the MRAM sample;

[0097] By measuring the change in magnetic field, the domain structure and magnetic features on the surface of the MRAM sample are observed.

[0098] Figure 1 Schematic diagram of magnetic field injection; Figure 2 Schematic diagram of complete magnetic work structure;

[0099] The present application integrates magnetic field injection and optical detection: this method combines the two steps of magnetic field injection and optical detection together, by loading the sample to the center of the magnet coil with domain winding, so that the sample is simultaneously affected by magneto-optical effect. This integrated method simplifies the experimental process and equipment configuration, and improves the efficiency.

[0100] The application realizes detection effect by using magneto-optical phenomenon: by placing the sample in a magnetic field, the magnetization behavior and magnetic domain structure of the sample under the applied magnetic field can be observed by using magneto-optical effect. This method can provide direct observation of the magnetic properties of the sample, which helps to understand the performance and behavior of MRAM devices.

[0101] The application realizes the control of the precision current controller: the whole set of equipment adopts the through precision current controller, which can realize the precise control of the magnetic field loading process. Through software precision control, the equipment can work in an ideal environment, ensuring the repeatability and accuracy of the experiment.

[0102] The application provides an ideal working environment: the method provides an ideal working environment for the experiment through precise control and software control. This helps to reduce external interference and errors, and improve the reliability and accuracy of the experimental results.

Claims

1. A MRAM detection method based on a magnetic field injection and optical detection coupling technique, characterized in that, The method comprises the following steps: loading the MRAM sample to be tested into the center of the magnetic coil of the magnetic domain; controlling the current in the magnetic coil to load the required magnetic field strength and direction; during the loading of the magnetic field, the MRAM sample is simultaneously subjected to magneto-optical effect, generating a detection effect triggered by magneto-optical phenomenon; using the MOKE microscope to observe the magnetic domain structure and magnetization behavior of the MRAM sample, and recording the polarization change of the reflected light; using the VSM to measure the magnetization curve of the MRAM sample under different magnetic fields, and obtaining the magnetic parameters; using the AFM to observe the topography and magnetic characteristics of the MRAM sample surface, and detecting the magnetic force change in the magnetic force detection mode; using the TEM to observe the microstructure and magnetic domain structure of the MRAM sample; using the MFM to observe the magnetic domain structure and magnetic characteristics of the MRAM sample surface.

2. The MRAM detection method based on the coupling of magnetic field injection and optical detection technology according to claim 1, characterized in that, The method comprises the following steps: loading the MRAM sample to be tested into the center of the magnetic coil of the magnetic domain; controlling the current in the magnetic coil to load the required magnetic field strength and direction; during the loading of the magnetic field, the MRAM sample is simultaneously subjected to magneto-optical effect, generating a detection effect triggered by magneto-optical phenomenon; using the MOKE microscope to observe the magnetic domain structure and magnetization behavior of the MRAM sample, and recording the polarization change of the reflected light; including:

3. The MRAM detection method based on the coupling of magnetic field injection and optical detection technology according to claim 1, characterized in that, placing the MRAM sample to be tested on the stage of the MOKE microscope; the MOKE microscope irradiates the MRAM sample surface with a laser beam, and detects the polarization change of the reflected light; during the magnetic field injection, the MRAM sample is subjected to magneto-optical effect, causing the polarization of the reflected light to change; by observing and recording the polarization change of the reflected light, the magnetic domain structure, magnetic domain wall movement and other magnetization information of the MRAM sample are obtained. The method comprises the following steps: loading the MRAM sample to be tested into the center of the magnetic coil of the magnetic domain; 4. The MRAM detection method based on the coupling of magnetic field injection and optical detection technology according to claim 1, characterized in that, controlling the current in the magnetic coil to load the required magnetic field strength and direction; during the loading of the magnetic field, the MRAM sample is simultaneously subjected to magneto-optical effect, generating a detection effect triggered by magneto-optical phenomenon; using the MOKE microscope to observe the magnetic domain structure and magnetization behavior of the MRAM sample, and recording the polarization change of the reflected light; including: placing the MRAM sample to be tested on the stage of the MOKE microscope; the MOKE microscope irradiates the MRAM sample surface with a laser beam, and detects the polarization change of the reflected light; during the magnetic field injection, the MRAM sample is subjected to magneto-optical effect, causing the polarization of the reflected light to change; by observing and recording the polarization change of the reflected light, the magnetic domain structure, magnetic domain wall movement and other magnetization information of the MRAM sample are obtained.

5. The MRAM detection method based on the coupling of magnetic field injection and optical detection technology according to claim 1, characterized in that, The method comprises the following steps: loading the MRAM sample to be tested into the center of the magnetic coil of the magnetic domain; controlling the current in the magnetic coil to load the required magnetic field strength and direction; during the loading of the magnetic field, the MRAM sample is simultaneously subjected to magneto-optical effect, generating a detection effect triggered by magneto-optical phenomenon; using the MOKE microscope to observe the magnetic domain structure and magnetization behavior of the MRAM sample, and recording the polarization change of the reflected light; including:

6. The MRAM detection method based on the coupling of magnetic field injection and optical detection technology according to any one of claims 1-5, characterized in that, placing the MRAM sample to be tested on the stage of the MOKE microscope; the MOKE microscope irradiates the MRAM sample surface with a laser beam, and detects the polarization change of the reflected light; during the magnetic field injection, the MRAM sample is subjected to magneto-optical effect, causing the polarization of the reflected light to change; by observing and recording the polarization change of the reflected light, the magnetic domain structure, magnetic domain wall movement and other magnetization information of the MRAM sample are obtained. The method comprises the following steps: loading the MRAM sample to be tested into the center of the magnetic coil of the magnetic domain; controlling the current in the magnetic coil to load the required magnetic field strength and direction; during the loading of the magnetic field, the MRAM sample is simultaneously subjected to magneto-optical effect, generating a detection effect triggered by magneto-optical phenomenon; using the MOKE microscope to observe the magnetic domain structure and magnetization behavior of the MRAM sample, and recording the polarization change of the reflected light; including: placing the MRAM sample to be tested on the stage of the MOKE microscope; the MOKE microscope irradiates the MRAM sample surface with a laser beam, and detects the polarization change of the reflected light; during the magnetic field injection, the MRAM sample is subjected to magneto-optical effect, causing the polarization of the reflected light to change; by observing and recording the polarization change of the reflected light, the magnetic domain structure, magnetic domain wall movement and other magnetization information of the MRAM sample are obtained. MFM uses magnetic force induction to detect the change of magnetic field intensity and direction on the surface of MRAM sample; By measuring the change of magnetic field, the magnetic domain structure and magnetic characteristics on the surface of MRAM sample are observed.

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