Silicon three-dimensional etching device and etching method

Abstract

The invention discloses a silicon three-dimensional etching device and etching method, and relates to the technical field of silicon etching. The device comprises a pre-conveying assembly, a processing box, an etching assembly, an etching box fixed to the outer side wall of the processing box, a mounting positioning assembly, an operation box fixed to the lower end face of the processing box, a locking adsorption assembly, a linkage box fixed to the outer bottom of the etching box and communicated with the interior of the etching box, and a recycling separation assembly. Comprising a backflow cylinder located at the top position in a processing box, a centrifugal cylinder is arranged in the backflow cylinder, and a transfer storage assembly used for storing a plurality of silicon wafers up and down is arranged in the backflow cylinder. According to the invention, the centrifugal cylinder and the backflow cylinder are used in cooperation, so that the recycling of the etched mixed gas is realized, the electromagnet and the suction cylinder are used in cooperation, the rapid positioning of the silicon wafer is realized, the position stability of the silicon wafer is ensured, the gas is uniformly distributed and shunted by the honeycomb plate, the uniformity of plasma impact is realized, and the uniformity of the plasma impact is improved. And the etching quality is ensured not to be reduced.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of silicon etching, and particularly relates to a silicon three-dimensional etching device and an etching method. BACKGROUND

[0002] The purpose of etching is to transfer the photoresist pattern to the film on the wafer surface, that is, through the masking effect of the photoresist, the part of the film not covered by the photoresist is removed by chemical reaction or physical action to complete the purpose of pattern transfer, and the wafer material currently used is mainly silicon wafer, and according to the existing public document CN118571808B, it is known that the etching process is a very important process, which generates high-density plasma and sends the plasma to the material to be etched through a uniform gas device. The plasma hits the surface of the material to be etched at high speed.

[0003] Therefore, in order to ensure the accuracy of the etching process, the silicon wafer currently used is mostly etched by dry etching, the by-product used is mixed with the gas, and since the gas cannot be separated and treated, the gas cannot be recycled, resulting in an increase in gas consumption in the process. After the silicon wafer is transported into the equipment, the plasma collides with the silicon wafer, which causes the vibration of the silicon wafer. The positioning structure currently used mostly limits the circumferential wall of the silicon wafer to ensure the position stability of the silicon wafer, but this method causes friction between the silicon wafer and the circumferential wall limiting structure, and the strength of the silicon wafer is not high, so the silicon wafer is easily abraded. The shaking of the silicon wafer will cause the deviation, reduce the etching precision, and when the device is used to etch the silicon wafer, the non-uniformity of the gas flow causes the non-uniform impact of the generated plasma on the silicon wafer, which reduces the etching quality. Therefore, we provide a silicon three-dimensional etching device and etching method to solve the above problems. SUMMARY

[0004] The purpose of the present application is to provide a silicon three-dimensional etching device and etching method, which realizes the recycling of the mixed gas after etching by the cooperation of the centrifugal cylinder and the reflux cylinder, realizes the rapid positioning of the silicon wafer by the cooperation of the electromagnet and the suction cylinder, ensures the position stability of the silicon wafer, and realizes the uniformity of the plasma impact by the honeycomb plate, which ensures that the etching quality will not be reduced.

[0005] To solve the above technical problems, the present application is realized by the following technical scheme:

[0006] The application provides a silicon three-dimensional etching device, which comprises a pre-conveying assembly, a processing box, an etching assembly, a mounting positioning assembly, a locking adsorption assembly and a recycling separation assembly.

[0007] The application is further provided that the processing box of the lifting plate is connected with the etching box through the opening and the opening of the side wall of the etching box.

[0008] The application is further provided that the upper end surface of the processing box is provided with a T-shaped opening connected with the inside of the processing box, the reflux cylinder is fixed in the T-shaped opening through the ring plate fixed on the surface wall, and the upper end port of the reflux cylinder is connected with the gas inlet pipe of the gas mixing cylinder through the pipeline.

[0009] The application is further provided that the taper gear ring I is fixed on the pipeline surface wall of the reflux cylinder through the bearing, the taper gear ring II is arranged below the outside of the reflux cylinder and engaged with the taper gear ring I, the sealing pipe penetrating through the side wall of the etching box is arranged below the reflux cylinder, the threaded cap is spirally connected with the port of the sealing pipe penetrating through the etching box, and the lower pipeline of the centrifugal cylinder is rotatably sleeved on the upper port of the sealing pipe.

[0010] The application is further provided that the recycling pipe is arranged between the outside of the processing box and the etching box, one end of the recycling pipe is connected with the inside of the etching box, the other end is connected with the inside of the processing box, the flow gas pipe is arranged on the periphery of the reflux cylinder in the processing box and connected with the end surface of the recycling box, the other end of the flow gas pipe penetrates through the reflux cylinder and is fixed with the rotating cover sleeved on the upper port of the centrifugal cylinder.

[0011] The application is further provided that the surface wall of the flow gas pipe is fixed with the linkage shell connected with the inside of the flow gas pipe, the end surface of the taper gear ring II opposite to the flow gas pipe is fixed with the shaft penetrating through the two side walls of the linkage shell through the bearing, and the impeller is fixed on the surface side of the shaft in the linkage shell.

[0012] The upper end surface of the bearing plate is provided with a foam pad, and the opening position of the foam pad is aligned with the through opening position of the etching box.

[0013] The inside of the suction cylinder is provided with a piston rod, and the piston block fixed on the upper end of the piston rod moves in the inside of the suction cylinder.

[0014] The upper end surface of the bearing plate is provided with a foam pad, and the opening position of the foam pad is aligned with the through opening position of the etching box.

[0015] The present application also provides an etching method of a silicon three-dimensional etching device, which is implemented by the following steps:

[0016] S1: Put a plurality of silicon wafers on the upper end surface of the operation box through the transfer box, and align the opening of the transfer box with the through opening position of the processing box, so that the linkage plate is located at the upper end of the protrusion, and then control the lifting plate to rise, so that the lifting plate drives the linkage plate to move upward through the protrusion, and opens the inside of the transfer box;

[0017] S2: Control the vacuum environment in the etching cavity through the external vacuum pump to reach the set value, and control the electric control sealing plate to open at this time, and then the three-axis conveying frame conveys the silicon wafers in the transfer box to the foam pad;

[0018] S3: The three-axis conveying frame controls the electromagnet to be powered on during the conveying process, so that the metal plate moves downward, and controls the piston rod to perform air suction in the suction cylinder, so that the silicon wafer on the foam pad is adsorbed by the air nozzle;

[0019] S4: Then pass the mixed gas from the position of the honeycomb plate through the honeycomb plate, and perform uniform distribution and shunt treatment on the mixed gas, and the uniformly distributed and shunted gas passes through the position of the coupling coil frame, so that high-speed plasma is generated to bombard the silicon wafer and perform etching work;

[0020] S5: At the same time, after the etching work is completed, the gas pump is connected with the recovery pipe at this time, and the gas pump performs air suction on the gas in the etching box through the recovery pipe, so that the etched gas enters the centrifugal cylinder, and the suctioned gas is moved at high speed in the flowing gas pipe.

[0021] S6: At this time, the gas pushes the impeller to rotate quickly, and controls the cone gear ring II to drive the cone gear ring I to rotate, so that the centrifugal cylinder rotates quickly in the backflow cylinder, and the gas is centrifugally processed, so that the particles in the gas enter the sealed pipe, and the clean gas reenters the gas mixing cylinder.

[0022] The present application has the following beneficial effects:

[0023] 1. When the recovered gas flows quickly in the flowing gas pipe, the recovered gas passes through the inside of the linkage shell, and the recovered gas flow drives the impeller to rotate quickly in the linkage shell, and drives the rotation of the cone gear ring II through the shaft, thereby synchronously driving the rotation of the cone gear ring I, and at this time, the cone gear ring drives the centrifugal cylinder to rotate quickly in the backflow cylinder, thereby realizing the quick separation of the recovered gas, and achieving the recycling of the mixed gas after etching.

[0024] 2. The energization of the electromagnet is controlled, the metal plate is driven to move downward, thereby driving the piston rod to perform the suction operation on the suction cylinder, and the silicon wafer is adsorbed through the air nozzle, and the three-axis conveying frame moves to the position below the silicon wafer in the etching box again, and the electromagnetic button is pressed again, at this time, the electromagnetic button controls the de-energization of the electromagnet, and the reset spring pushes the metal plate to reset upward, and the piston rod resets in the suction cylinder, so that the air nozzle is separated from the adsorption relationship with the silicon wafer, thereby realizing the quick adsorption of the silicon wafer, and ensuring that the silicon wafer will not be offset during the etching process.

[0025] 3. The gas mixing cylinder passes the mixed gas from the position of the honeycomb plate, the mixed gas is uniformly distributed through the honeycomb plate, and the stability of the etching quality is maintained by ensuring that the plasma uniformly impacts the surface of the silicon wafer. BRIEF DESCRIPTION OF DRAWINGS

[0026] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiment description. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0027] Figure 1 It is a schematic diagram of the overall structure of the present application.

[0028] Figure 2 It is a schematic diagram of the overall structure of the present application.

[0029] Figure 3 It is an explosion diagram of the overall structure of the present application.

[0030] Figure 4The combination of internal structure of etching assembly and locking adsorption assembly in the present application.

[0031] Figure 5 The combination of structure of reflux cylinder, centrifugal cylinder, sealing tube and recovery tube in the present application.

[0032] Figure 6 The structure explosion diagram of centrifugal cylinder, sealing tube and linkage shell in the present application.

[0033] Figure 7 The sectional view of partial structure of flow gas tube in the present application.

[0034] Figure 8 The structure schematic diagram of linkage box, electromagnet, suction cylinder and bearing plate in the present application.

[0035] Figure 9 The sectional structure diagram of suction cylinder in the present application.

[0036] Figure 10 The structure diagram of dispersion cylinder in the present application.

[0037] Figure 11 The external schematic diagram of overall structure in the present application.

[0038] Figure 12 The internal structure sectional view of processing box and etching box in the present application.

[0039] In the drawings, the components represented by each reference numeral are listed as follows:

[0040] 100 - pre-conveying assembly, 101 - processing box, 101a - T-shaped port, 102 - lifting plate, 102a - protrusion, 200 - etching assembly, 201 - etching box, 201a - electric control sealing plate, 201b - electromagnetic button, 202 - coupling coil holder, 203 - dispersion cylinder, 203a - honeycomb plate, 204 - gas mixing cylinder, 205 - bearing plate, 205a - foam pad, 205b - calibration rod, 300 - installation positioning assembly, 301 - operation box, 302 - three-axis conveying frame, 400 - locking adsorption assembly, 401 - linkage box, 402 - electromagnet, 403 - suction cylinder, 403a - air nozzle, 403b - piston rod, 403c - metal plate, 404 - reset spring, 500 - recovery separation assembly, 501 - reflux cylinder, 502 - centrifugal cylinder, 502a - bevel gear ring one, 503 - sealing tube, 503a - threaded cover, 504 - recovery tube, 505 - bevel gear ring two, 505a - shaft rod, 505b - impeller, 506 - flow gas tube, 506a - rotating cover, 506b - linkage shell, 600 - transfer storage assembly, 601 - transfer box, 602 - linkage plate. DETAILED DESCRIPTION

[0041] With reference to the drawings of the embodiments of the present application, the technical solutions in the embodiments of the present application will be described clearly and completely. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the scope of the present application.

[0042] Embodiment 1

[0043] Please refer to Figure 1 , Figure 2 and Figure 3 , the first embodiment of the present application provides a silicon three-dimensional etching device, by the cooperation of the centrifugal cylinder 502 and the reflux cylinder 501, the mixed gas after etching is recycled and reused, at the same time, the cooperation of the electromagnet 402 and the suction cylinder 403 realizes the rapid positioning of the silicon wafer, ensures the position stability of the silicon wafer, and the honeycomb plate 203a uniformly distributes the gas, realizes the uniformity of plasma impact, and ensures that the etching quality will not be reduced.

[0044] Specifically, the pre-conveying assembly 100 includes a processing box 101, the etching assembly 200 includes an etching box 201 fixed on the outer side wall of the processing box 101, the installation positioning assembly 300 includes an operation box 301 fixed on the lower end surface of the processing box 101, the locking adsorption assembly 400 includes a linkage box 401 fixed on the outer bottom of the etching box 201 and connected with the inside of the etching box 201, the recovery separation assembly 500 includes a reflux cylinder 501 at the top of the processing box 101, and the transfer storage assembly 600 is used for storing multiple silicon wafers in up and down positions.

[0045] Through the use of the above structure, the pre-conveying assembly 100 conveys the silicon wafer into the etching assembly 200, and the locking adsorption assembly 400 positions the silicon wafer, so that the silicon wafer will not be deviated during etching, and the etching accuracy is improved, at the same time, the recovery separation assembly 500 recovers and separates the mixed gas after etching, so that the mixed gas can be recycled and reused.

[0046] According to Figure 4 , Figure 8 , Figure 10 and Figure 11The inlet position of the processing box 101 is provided with an electrically lifted lifting plate 102, the bottom surface of the etching box 201 is fixed with a bearing plate 205, the top surface of the processing box 101 is bolted with a gas mixing cylinder 204 located above the bearing plate 205, the lower end of the gas mixing cylinder 204 is fixedly connected with a dispersion cylinder 203, the inside of the dispersion cylinder 203 is fixed with a honeycomb plate 203a, the inside of the etching box 201 located below the honeycomb plate 203a is fixed with a coupling coil rack 202, the upper end surface of the operation box 301 is fixed with a three-axis conveying frame 302 located in the inside of the processing box 101, the inside of the linkage box 401 is fixed with a suction cylinder 403 located at the inner ring position of the bearing plate 205, the inside of the linkage box 401 located below the suction cylinder 403 is fixed with an electromagnet 402, and the inside of the return flow cylinder 501 is provided with a centrifugal cylinder 502.

[0047] When the above structure is used, the silicon wafer is transported to the upper side of the bearing plate 205 through the three-axis conveying frame 302, at this time the three-axis conveying frame 302 controls the electromagnet 402 to be powered, so that the electromagnet 402 controls the inside of the suction cylinder 403 to perform suction work, so that the suction system adsorbs the silicon wafer, at the same time the gas mixing cylinder 204 passes mixed gas from the position of the honeycomb plate 203a, the mixed gas is uniformly distributed and branched through the honeycomb plate 203a, and the uniformly distributed and branched gas passes from the position of the coupling coil rack 202, so that high-speed plasma is generated to bombard the silicon wafer to perform etching work, and the recovery pipe 504 is connected with the external air pump, which works through the air pump, so that the gas in the inside of the etching box 201 located between the coupling coil rack 202 and the silicon wafer is pumped through the recovery pipe 504, and the pumped gas is separated by rotating in the return flow cylinder 501 through the centrifugal cylinder 502, so that the by-products generated by etching are separated from the gas, and the separated gas flows back into the gas mixing cylinder 204 for recycling work;

[0048] When the recovery and separation assembly 500 is started in linkage with the locking and adsorbing assembly 400, the suction negative pressure of the centrifugal cylinder 502 is simultaneously enhanced by the air pump (-90kPa→-110kPa), the cavity pressure fluctuation caused by gas recovery is compensated, the electromagnet is intelligently adjusted, the thickness is measured by laser through the three-axis conveying frame 302, the adsorption force is dynamically adjusted according to the thickness of the wafer, and the deformation of the thin wafer (<200μm) is avoided.

[0049] Further, according to Figure 4 and Figure 12It can be known that, contrary to the processing box 101 of the lifting plate 102, the through opening of the processing box 101 is connected with the through opening of the sidewall of the etching box 201, and the position of the through opening of the etching box 201 is provided with an electrically-controlled sealing plate 201a moving up and down, which is used to separate the etching box 201 from the processing box 101, so that the etching box 201 is in a sealed state, and thus the external vacuum pump can quickly perform vacuumizing treatment on the inside of the etching box 201, and the detector fixed in the etching box 201 measures the vacuum coefficient therein, and when the vacuum coefficient in the etching box 201 reaches the standard, the electrically-controlled sealing plate 201a is controlled to move upward, so that the inside of the etching box 201 is connected with the inside of the processing box 101, so as to send the silicon wafer into the processing box 101 by the three-axis conveying frame 302.

[0050] Further, according to Figure 2 、 Figure 5 and Figure 12 It can be known that the upper end surface of the processing box 101 is provided with a T-shaped opening 101a connected with the inside thereof, the reflux cylinder 501 is bolted and installed in the T-shaped opening 101a through the ring plate fixed to the sidewall, the upper end opening of the reflux cylinder 501 is connected with the gas inlet pipe of the gas mixing cylinder 204 through the pipeline, the ring plate at the upper end of the reflux cylinder 501 is in the T-shaped opening 101a, and the reflux cylinder 501 is limited by the T-shaped opening 101a, so as to ensure that the reflux cylinder 501 is stably arranged in the processing box 101, and after the etched gas is separated by the reflux cylinder 501 and the separation cylinder, the recovered gas is returned to the gas mixing cylinder 204 through the pipeline at the upper end of the reflux pipe, the centrifugal force throws the etching byproducts to the sidewall, and the etching byproducts fall into the sealed pipe 503, the purified gas is returned to the gas mixing cylinder 204 through the reflux cylinder 501 for recycling (the gas recovery rate is greater than 92%), the etching waste gas enters the centrifugal cylinder 502 through the recovery pipe 504, the high-speed airflow drives the impeller 505b→the shaft 505a→the bevel gear ring two 505→the bevel gear ring one 502a, and drives the centrifugal cylinder 502 to rotate (≥15000rpm), the gas pump sucks the etching box 201 waste gas→the airflow in the flow pipe 506 is greater than or equal to 30m / s→the impeller is driven to rotate, the separated pure gas is reused, and the particulate matter is deposited in the sealed pipe 503.

[0051] It should be noted that the gas mixing cylinder 204 in the etching box 201 is connected with the external gas source device, so as to add the gas required for etching to the gas mixing box, and the electromagnetic button 201b is electrically connected with the cable of the electromagnet 402, so as to control the on-off of the electromagnet 402. The electrical structure, detection structure and sensor used in the device are synchronously linked and controlled by the control center. The three-axis conveying frame 302 used can move in XYZ three-axis direction and can automatically lift in height. The uniform gas is applied with 13.56 MHz radio frequency power through the coupling coil frame 202, so as to ionize to generate high-density plasma, uniformly bombard the wafer surface, and the honeycomb plate 203a ensures uniform distribution of the plasma (uniformity > 95%), and the adsorption system maintains zero displacement of the wafer (vibration < 0.05 μm).

[0052] Embodiment 2

[0053] Please refer to Figure 3 、 Figure 5 、 Figure 6 and Figure 7 , on the basis of embodiment 1, the engagement of the bevel gear ring one 502a and the bevel gear ring two 505 is used, the rotation of the bevel gear ring two 505 is driven by the recovered gas, so as to drive the rotation of the bevel gear ring one 502a, thereby realizing the separation work by recycling available resources and improving the utilization rate of resources.

[0054] Specifically, the centrifugal cylinder 502 rotates through the pipe wall of the return cylinder 501 and is fixed with the bevel gear ring one 502a, the bevel gear ring two 505 engaged with the bevel gear ring one 502a is arranged at a position below the outside of the return cylinder 501, a sealing pipe 503 with one end penetrating the side wall of the etching box 201 is arranged at a position directly below the return cylinder 501, a threaded cap 503a is spirally connected with the port position of the sealing pipe 503 penetrating the etching box 201, the lower pipe of the centrifugal cylinder 502 rotates around the upper port position of the sealing pipe 503, a recovery pipe 504 is arranged between the outside of the processing box 101 and the etching box 201, one end of the recovery pipe 504 is connected with the inside of the etching box 201, and the other end is connected with the inside of the processing box 101, a flow gas pipe 506 with one end connected with the end face of the recovery box is arranged on the periphery of the return cylinder 501 in the processing box 101, the other end of the flow gas pipe 506 penetrates the return cylinder 501 and is fixed with a rotating cover 506a sleeved on the upper port position of the centrifugal cylinder 502, the surface wall of the flow gas pipe 506 is fixed with a linkage shell 506b connected with the inside thereof, the shaft 505a penetrating the two side walls of the linkage shell 506b through the bearing is fixed with the impeller 505b on the surface side of the shaft 505a in the linkage shell 506b;

[0055] By the above structure, when the recycling gas flows rapidly in the flow pipe 506, the recycling gas will drive the impeller 505b to rotate rapidly in the linkage shell 506b after passing through the internal position of the linkage shell 506b, and the rotation of the bevel gear ring two 505b will drive the rotation of the bevel gear ring one 502a, and the bevel gear ring will drive the centrifugal cylinder 502 to rotate rapidly in the return cylinder 501. When the recycling gas stops, there is no high-speed gas flow in the flow pipe 506, so the bevel gear ring two 505 stops rotating, and the centrifugal cylinder 502 stops rotating, thereby realizing the synchronous operation of the centrifugal cylinder 502 following the recycling work of the gas flow. At the same time, due to the rotation connection between the rotating cover 506a, the sealing pipe 503 and the centrifugal cylinder 502, the rotation of the centrifugal cylinder 502 will not drive the rotation of the rotating cover 506a and the sealing pipe 503, thereby ensuring the integrity of the rotating cover 506a and the sealing pipe 503.

[0056] When the by-products generated by etching are separated from the gas, the by-products will directly fall into the sealing pipe 503 from the bottom pipe position of the separation cylinder. The port of the sealing pipe 503 is sealed by the threaded cap 503a, which can prevent the recycling gas from leaking. When cleaning the by-products in the sealing pipe 503, the threaded cap 503a is unscrewed from the pipe opening of the sealing pipe 503, and the by-products in the sealing pipe 503 can be cleaned.

[0057] Example 3

[0058] Please refer to Figure 3 、 Figure 4 、 Figure 8 and Figure 9 , on the basis of example 1, this example controls the on-off of the electromagnet 402 through the electromagnetic button 201b, so as to facilitate the transportation of the silicon wafer through the three-axis transportation frame 302.

[0059] Specifically, the upper end face of the bearing plate 205 is provided with a foam pad 205a, and the opening position of the foam pad 205a is aligned with the opening position of the etching box 201, the upper end face of the bearing plate 205 is fixed with a plurality of calibration rods 205b which are uniformly distributed along the circumferential side and are attached to the circumferential wall of the foam pad 205a, the surface wall of the etching box 201 located directly below the opening of the etching box 201 is fixed with an electromagnetic button 201b for controlling the on-off of the electromagnet 402, the upper end face of the suction cylinder 403 is fixed with an air nozzle 403a which is connected to the inside of the suction cylinder 403 and is flush with the upper end face of the foam pad 205a, the inside of the suction cylinder 403 is provided with a piston rod 403b, the piston block fixed on the upper end of the piston rod 403b moves in the inside of the suction cylinder 403, the end face of the piston rod 403b passing through the lower end port of the suction cylinder 403 is fixed with a metal plate 403c which is attracted to the electromagnet 402, the inner bottom surface of the linkage box 401 located on both sides of the electromagnet 402 is fixed with a reset spring 404 which abuts against the bottom surface of the metal plate 403c.

[0060] Through the use of the above structure, after the three-axis conveying frame 302 places the silicon wafer on the foam pad 205a, the plurality of calibration rods 205b will limit the silicon wafer from the side, and at this time the three-axis conveying frame 302 will press down the electromagnetic button 201b to control the power-on of the electromagnet 402, driving the metal plate 403c to move downward, thereby driving the piston rod 403b to perform suction operation in the suction cylinder 403, and then the silicon wafer is adsorbed through the air nozzle 403a, and the downward movement of the metal plate 403c will compress the reset spring 404, at the same time the three-axis conveying frame 302 withdraws from the etching box 201, at this time the etching work is carried out, and after the etching work is completed, the three-axis conveying frame 302 moves to the position below the silicon wafer in the etching box 201 again, and the electromagnetic button 201b is pressed again, at this time the electromagnetic button 201b controls the power-off of the electromagnet 402, thereby the reset spring 404 pushes the metal plate 403c to reset upward, and then the piston rod 403b resets in the suction cylinder 403, so that the air nozzle 403a is separated from the adsorption relationship with the silicon wafer, facilitating the three-axis conveying frame 302 to take out the silicon wafer.

[0061] Embodiment 4

[0062] Please refer to Figure 2 , Figure 3 and Figure 11 , on the basis of embodiment 1, the convex block 102a is provided to synchronize the movement of the linkage plate 602 with the lifting plate 102, so as to facilitate the opening of the transfer box 601.

[0063] Specifically, the transfer storage assembly 600 comprises a transfer box 601 arranged on the upper end face of the operation box 301 and connected with the position of the opening of the processing box 101, and a linkage plate 602 arranged on the position of the transfer box 601 relative to the processing box 101 and capable of sliding up and down, wherein the lower end face of the lifting plate 102 is fixed with a protrusion 102a connected with the lower end face of the linkage plate 602;

[0064] Through the above structure, when the transfer box 601 is transported to the position on the operation box 301, the linkage plate 602 is located at the upper end face of the protrusion 102a, so that the lifting plate 102 is driven by the protrusion 102a to move upward when the lifting plate 102 is lifted by the electric control, so as to open the inside of the transfer box 601, and the silicon wafer in the transfer box 601 can be taken out through the three-axis conveying frame 302, and the linkage plate 602 is free-falling to the initial position when the lifting plate 102 is lowered.

[0065] Embodiment 5

[0066] The application also provides an etching method of the silicon three-dimensional etching device, which is implemented by the following steps:

[0067] S1: a plurality of silicon wafers are placed on the upper end face of the operation box 301 through the transfer box 601, and the opening of the transfer box 601 is connected with the position of the opening of the processing box 101, so that the linkage plate 602 is located at the upper end of the protrusion 102a, and the lifting plate 102 is lifted at this time, so that the lifting plate 102 is driven by the protrusion 102a to move upward and open the inside of the transfer box 601;

[0068] S2: the vacuum environment in the etching cavity is controlled by the external vacuum pump to reach a set value, and the electric control sealing plate 201a is opened at this time, and the three-axis conveying frame 302 conveys the silicon wafer in the transfer box 601 to the foam pad 205a;

[0069] S3: the three-axis conveying frame 302 controls the electromagnet 402 to be powered during the conveying process, so that the metal plate 403c moves downward, and the piston rod 403b controls the suction cylinder 403 to perform suction, so that the silicon wafer on the foam pad 205a is adsorbed by the air nozzle 403a;

[0070] S4: the mixed gas is passed from the position of the honeycomb plate 203a to the honeycomb plate 203a through the gas mixing cylinder 204, the mixed gas is uniformly distributed and branched by the honeycomb plate 203a, and after the gas enters the coupling coil frame 202, the coupling coil frame 202 is connected with the high-frequency radio frequency power supply, the high-density plasma is generated by exciting the gas ionization, the silicon wafer surface is uniformly bombarded, and the etching work is performed;

[0071] S5: At the same time, after the etching work is finished, the gas pump is connected with the recovery pipe 504, and the gas pump sucks the gas in the etching box 201 through the recovery pipe 504, so that the etched gas enters the centrifugal cylinder 502, and the sucked gas is moved at high speed in the flowing pipe 506;

[0072] S6: The gas at this time pushes the impeller 505b to rotate quickly, and controls the bevel gear ring two 505 to drive the bevel gear ring one 502a to rotate, so that the centrifugal cylinder 502 rotates quickly in the backflow cylinder 501, so as to centrifugally process the gas, and the particles in the gas enter the sealed pipe 503, and the clean gas reenters the gas mixing cylinder 204.

[0073] In the description of the present specification, the description of the terms "one embodiment", "example", "specific example" and the like means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the described specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner.

[0074] The preferred embodiments of the application disclosed above are only used to help explain the application. The preferred embodiments do not describe all the details and limit the application to the specific embodiments. Obviously, many modifications and changes can be made according to the content of the present specification. The present specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the application, so that those skilled in the art can well understand and utilize the application. The application is limited only by the claims and their full scope and equivalents.

Claims

1. A silicon three-dimensional etching apparatus, characterized by: The utility model relates to a kind of etching device, including, Pre-delivery assembly (100), including processing box (101), the inlet position of the processing box (101) is provided with electrically operated lifting lifting plate (102); Etching assembly (200), including fixed in the outer side wall of processing box (101) etching box (201), the inner bottom surface of the etching box (201) is fixed with bearing plate (205), the inner top surface of processing box (101) is bolted with the gas mixing cylinder (204) located in the position directly above bearing plate (205), the lower end port position of the gas mixing cylinder (204) is fixedly connected with dispersion cylinder (203), the inside of the dispersion cylinder (203) is fixed with honeycomb plate (203a), the inside of etching box (201) is fixed with coupling coil rack (202) in the position directly below honeycomb plate (203a); Mounting positioning assembly (300), including fixed in the lower end surface of processing box (101) operation box (301), the upper end surface of the operation box (301) is fixed with three-axis conveying frame (302) in the inside of processing box (101); Locking adsorption assembly (400), including fixed in the outer bottom position of etching box (201) and with inside connection linkage box (401), the inside of the linkage box (401) is fixed with suction cylinder (403) in the inner ring position of bearing plate (205) at upper end portion, the inside of linkage box (401) is fixed with electromagnet (402) in the position directly below suction cylinder (403); Recycling separation assembly (500), including backflow cylinder (501) in the inner top position of processing box (101), the inside of the backflow cylinder (501) is provided with centrifugal cylinder (502);And, Transfer storage assembly (600) for storing multiple silicon wafers in up-down position.

2. The apparatus of claim 1, wherein The processing box (101) opposite to lifting plate (102) is communicated with the through port of the side wall of etching box (201) through the through port of the side wall of etching box (201) and is communicated, the through port position of the etching box (201) is provided with electrically operated sealing plate (201a) moving up and down.

3. The apparatus of claim 1, wherein the etching device is a silicon three-dimensional etching device. The upper end surface of the processing box (101) is provided with T-shaped port (101a) communicated with the inside thereof, the backflow cylinder (501) is bolted in the T-shaped port (101a) through the ring plate fixed to the surface wall, and the upper end port of the backflow cylinder (501) is connected with the gas inlet pipe of the gas mixing cylinder (204) through the pipeline.

4. The apparatus of claim 2, wherein the etching device is a silicon three- dimensional etching device. The surface wall of the pipeline of the centrifugal cylinder (502) is fixed with bevel gear ring one (502a) through bearing rotation through the pipeline of the backflow cylinder (501), and the bevel gear ring two (505) is arranged at the position below the outside of the backflow cylinder (501) and is engaged with the bevel gear ring one (502a). A sealing pipe (503) is arranged at the position directly below the backflow cylinder (501), and one end of the sealing pipe (503) penetrates the side wall of the etching box (201), the end port position of the sealing pipe (503) penetrating the etching box (201) is screw-connected with screw cap (503a), and the lower pipeline of the centrifugal cylinder (502) is sleeved on the upper end port position of the sealing pipe (503).

5. The apparatus of claim 4, wherein the etching device is a silicon three- dimensional etching device. A recovery pipe (504) is arranged at a position between the processing box (101) and the etching box (201), one end of the recovery pipe (504) is communicated with the interior of the etching box (201), the other end is communicated with the interior of the processing box (101), a flow gas pipe (506) with one end communicated with the end face of the recovery box is arranged around the return flow cylinder (501) in the interior of the processing box (101), the other end of the flow gas pipe (506) penetrates through the return flow cylinder (501) and is fixed with a rotating cover (506a) sleeved on the port position of the centrifugal cylinder (502).

6. The apparatus of claim 5, wherein the etching device is a silicon three-dimensional etching device. The surface wall of the flow gas pipe (506) is fixed with a linkage shell (506b) communicated with the interior thereof, the end face of the bevel gear ring two (505) is fixed with a shaft rod (505a) penetrating through the two side walls of the linkage shell (506b) through a bearing, the surface side of the shaft rod (505a) in the interior of the linkage shell (506b) is fixed with an impeller (505b).

7. The apparatus of claim 2, wherein the etching device is a silicon three- dimensional etching device. The upper end face of the bearing plate (205) is provided with a foam pad (205a), the opening position of the foam pad (205a) is aligned with the opening position of the etching box (201), the upper end face of the bearing plate (205) is fixed with a plurality of alignment rods (205b) uniformly distributed along the circumferential side and attached to the circumferential wall of the foam pad (205a), the surface wall of the etching box (201) directly below the opening of the etching box (201) is fixed with an electromagnetic button (201b) for controlling the on-off electricity of the electromagnet (402), the upper end face of the suction cylinder (403) is fixed with an air nozzle (403a) communicated with the interior thereof and flush with the upper end face of the foam pad (205a).

8. The apparatus of claim 7, wherein the etching device is a silicon three- dimensional etching device. The interior of the suction cylinder (403) is provided with a piston rod (403b), the piston block fixed on the upper end of the piston rod (403b) moves in the interior of the suction cylinder (403), the end face of the piston rod (403b) penetrating through the lower port of the suction cylinder (403) is fixed with a metal plate (403c) attracted to the electromagnet (402), the inner bottom face of the linkage box (401) on both sides of the electromagnet (402) is fixed with a reset spring (404) abutting against the bottom face of the metal plate (403c).

9. The apparatus of claim 5, wherein the etching device is a silicon three- dimensional etching device. The transfer storage assembly (600) comprises a transfer box (601) at the upper end face of the operation box (301) and communicated with the opening position of the processing box (101), the transfer box (601) is provided with a linkage plate (602) sliding up and down at a position opposite to the processing box (101), the lower end face of the lifting plate (102) is fixed with a protruding block (102a) communicated with the lower end face of the linkage plate (602).

10. An etching method of a silicon three-dimensional etching apparatus, characterized by, The silicon three-dimensional etching device in claim 9 is implemented by the following steps: S1: through the transfer box (601) will be placed on the operation box (301) end surface of multiple silicon wafers, and make the opening of the transfer box (601) and processing box (101) mouth position with the paste, so that the linkage plate (602) is in the upper end of the protruding block (102a), at this time the control of the lifting plate (102) rises, thus the lifting plate (102) through the protruding block (102a) linkage plate (602) is moved up, and the inside of the transfer box (601) is opened; S2: again through the external vacuum pump control etching cavity inside the vacuum environment, so that it reaches the set value, in the control of electric control sealing plate (201a) open, at this time the three axis transport frame (302) will be transported to the foam pad (205a) in the transfer box (601) silicon wafer; S3: three axis transport frame (302) in the transport process will control the electromagnet (402) power on, so that the metal plate (403c) moves down, and controls the piston rod (403b) to suction cylinder (403) in the air, so that the silicon wafer is in the foam pad (205a) on the air nozzle (403a) is adsorbed; S4: then through the gas mixing cylinder (204) will be mixed from the honeycomb plate (203a) position through the honeycomb plate (203a) of mixed gas for uniform distribution of flow treatment, and the uniform distribution of flow of gas from the position of the coupling coil frame (202) through, thus generate high speed plasma to silicon wafer for bombardment, etching work; S5: at the same time, after the etching work is finished, at this time through the gas pump and recovery pipe (504) connected, the gas pump through the recovery pipe (504) to the etching box (201) inside the gas suction, so that the etching gas into the centrifugal cylinder (502), and the suction of gas is high speed in the flow of gas pipe (506) movement; S6: at this time the gas will push the impeller (505b) fast rotation, and with this control bevel gear ring two (505) drive bevel gear ring one (502a) rotation, centrifugal cylinder (502) fast in the backflow cylinder (501) rotation, so that the gas centrifugal treatment, the particles in the gas into the sealed pipe (503), and clean gas reenter the gas mixing cylinder (204).

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