Capacitor formed foil capacity detection method and device, computer equipment, readable storage medium and program product

Abstract

The invention relates to a capacitor formed foil capacity detection method and device, computer equipment, a computer readable storage medium and a computer program product. The method comprises the following steps: acquiring the thickness information of an oxidation film generated in the production process of the capacitor formed foil; detecting hole microcosmic parameter information of formation holes in the capacitor formed foil according to the thickness information of the oxide film and the corrosion foil hole radius information of the capacitor formed foil; and detecting the capacity of the capacitor formed foil according to the oxide film thickness information and the hole microscopic parameter information. By adopting the method, the capacitor capacity detection accuracy can be improved.

Description

Technical Field

[0001] This application relates to the field of capacitor technology, and in particular to a method, apparatus, computer equipment, computer-readable storage medium, and computer program product for detecting the capacitance of a capacitor formed foil. Background Technology

[0002] In the design and manufacturing of capacitors, capacitance is an important indicator, and it plays a crucial guiding role in improving capacitor performance.

[0003] Currently, capacitors are typically tested during the manufacturing process to measure some macroscopic parameters, and then their capacitance is measured based on these parameters. However, macroscopic parameters are often difficult to accurately characterize the factors affecting capacitor capacitance, resulting in low accuracy in capacitance measurement. Summary of the Invention

[0004] Therefore, it is necessary to provide a capacitor forming foil capacitance detection method, apparatus, computer equipment, computer-readable storage medium, and computer program product that can improve the accuracy of capacitor capacitance detection, in order to address the above-mentioned technical problems.

[0005] In a first aspect, this application provides a method for detecting the capacitance of a capacitor formed foil, comprising:

[0006] Obtain information on the thickness of the oxide film generated during the production process of capacitor foil;

[0007] Based on the thickness information of the oxide film and the radius information of the pores in the etched foil of the capacitor foil, the microscopic parameters of the pores in the capacitor foil are detected.

[0008] The capacitance of the capacitor foil is detected based on the oxide film thickness information and the pore microstructure information.

[0009] In one embodiment, the pore micro-parameter information includes pore depth information, outer radius information of the formed pore, and inner radius information of the formed pore; the step of detecting the capacitance of the capacitor formed foil based on the oxide film thickness information and the pore micro-parameter information includes:

[0010] The capacitance of the capacitor foil formed by the oxide film is detected based on the thickness information, the outer radius information, the inner radius information, and the depth information of the formed hole.

[0011] The surface capacitance of the capacitor foil is detected based on the inner radius information of the formed hole and the thickness information of the oxide film.

[0012] The capacitance of the capacitor foil is generated based on the capacitance of the formed hole and the capacitance of the surface.

[0013] In one embodiment, the via capacitance includes the via wall capacitance and the via bottom capacitance; the step of detecting the via capacitance of the capacitor foil based on the oxide film thickness information, the via outer radius information, the via inner radius information, and the via depth information includes:

[0014] Based on the dielectric constant of the capacitor foil, the outer radius of the via, the inner radius of the via, and the depth of the via, the via wall capacity of the capacitor foil is detected.

[0015] The capacitance at the bottom of the formed-hole of the capacitor foil is detected based on the dielectric constant of the capacitor foil and the thickness information of the oxide film.

[0016] In one embodiment, the via capacitance includes the via wall capacitance and the via bottom capacitance; generating the capacitance of the capacitor foil based on the via capacitance and the surface capacitance includes:

[0017] The number of forming holes in the capacitor forming foil is detected based on the hole spacing between forming holes in the capacitor forming foil and the total surface area of ​​the capacitor forming foil.

[0018] The capacitance of the capacitor foil is generated based on the number of formed holes, the wall capacity of the formed holes, the bottom capacity of the formed holes, and the surface capacitance.

[0019] In one embodiment, before detecting the number of formed holes in the capacitor formed foil based on the hole spacing between formed holes and the total surface area of ​​the capacitor formed foil, the method further includes:

[0020] Detect the shortest distance between adjacent formation holes in the capacitor formation foil;

[0021] Based on the shortest spacing and the outer radius information of the formed holes in the capacitor formed foil, the center-to-center spacing between the formed holes in the capacitor formed foil is detected.

[0022] In one embodiment, the pore micro-parameter information includes the outer radius information and the inner radius information of the formed pores; the step of detecting the pore micro-parameter information of the formed pores in the capacitor formed foil based on the thickness information of the oxide film and the pore radius information of the etched foil of the capacitor formed foil includes:

[0023] Based on the first correlation model, the hole radius information of the etched foil, and the thickness information of the oxide film, the outer radius information of the formation hole of the capacitor formation foil is detected. The first correlation model is used to characterize the correlation relationship among the hole radius information of the etched foil, the thickness information of the oxide film, and the outer radius information of the formation hole.

[0024] Based on the second correlation model, the hole radius information of the etched foil, and the thickness information of the oxide film, the inner radius information of the formation hole of the capacitor forming foil is detected. The second correlation model is used to characterize the correlation relationship among the hole radius information of the etched foil, the thickness information of the oxide film, and the inner radius information of the formation hole.

[0025] Secondly, this application also provides a capacitor forming foil capacitance detection device, comprising:

[0026] The acquisition module is used to acquire information on the thickness of the oxide film generated during the production process of capacitor foil.

[0027] The parameter detection module is used to detect the microscopic parameters of the pores in the capacitor forming foil based on the thickness information of the oxide film and the radius information of the pores in the etched foil of the capacitor forming foil.

[0028] The capacity detection module is used to detect the capacity of the capacitor foil based on the oxide film thickness information and the pore micro-parameter information.

[0029] Thirdly, this application also provides a computer device, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to perform the following steps:

[0030] The thickness information of the oxide film generated during the production process of capacitor forming foil is obtained; based on the thickness information of the oxide film and the radius information of the etched foil pores of the capacitor forming foil, the microscopic parameter information of the forming pores in the capacitor forming foil is detected; based on the oxide film thickness information and the microscopic parameter information of the pores, the capacitance of the capacitor forming foil is detected.

[0031] Fourthly, this application also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, performs the following steps:

[0032] The thickness information of the oxide film generated during the production process of capacitor forming foil is obtained; based on the thickness information of the oxide film and the radius information of the etched foil pores of the capacitor forming foil, the microscopic parameter information of the forming pores in the capacitor forming foil is detected; based on the oxide film thickness information and the microscopic parameter information of the pores, the capacitance of the capacitor forming foil is detected.

[0033] Fifthly, this application also provides a computer program product, including a computer program that, when executed by a processor, performs the following steps:

[0034] The thickness information of the oxide film generated during the production process of capacitor forming foil is obtained; based on the thickness information of the oxide film and the radius information of the etched foil pores of the capacitor forming foil, the microscopic parameter information of the forming pores in the capacitor forming foil is detected; based on the oxide film thickness information and the microscopic parameter information of the pores, the capacitance of the capacitor forming foil is detected.

[0035] The aforementioned capacitor forming foil capacitance detection method, apparatus, computer equipment, computer-readable storage medium, and computer program product first detect the oxide film thickness and corrosion foil pore radius information generated during the capacitor forming foil production process. Then, based on the oxide film thickness and corrosion foil pore radius information, the microscopic parameters of the forming pores in the capacitor forming foil are detected. This achieves the detection of microscopic parameters of the forming pores in the capacitor forming foil, and thus, based on the oxide film thickness and pore microscopic parameters, the capacitance of the capacitor forming foil is detected. This realizes the measurement of capacitor forming foil capacitance based on its microscopic parameters. Compared to the macroscopic parameters of the capacitor forming foil, microscopic parameters are more accurate in characterizing the influencing factors of capacitor forming foil capacitance, thus improving the accuracy of capacitor capacitance detection. Attached Figure Description

[0036] To more clearly illustrate the technical solutions in the embodiments of this application or related technologies, the drawings used in the description of the embodiments of this application or related technologies will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0037] Figure 1 This is a schematic flowchart of a capacitor foil capacitance detection method in one embodiment of this application;

[0038] Figure 2 This is a schematic diagram of the process for detecting the capacitance of a capacitor foil in one embodiment of this application;

[0039] Figure 3 This is a schematic diagram of the etched foil holes in one embodiment of this application;

[0040] Figure 4 This is a schematic diagram of a formed hole in one embodiment of this application;

[0041] Figure 5This is a schematic diagram showing the distribution of the forming holes on the capacitor forming foil in one embodiment of this application;

[0042] Figure 6 This is a structural block diagram of a capacitor foil capacitance detection device in one embodiment;

[0043] Figure 7 This is an internal structural diagram of a computer device in one embodiment. Detailed Implementation

[0044] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0045] In one exemplary embodiment, such as Figure 1 As shown, a method for detecting the capacitance of a capacitor formed in foil is provided, including steps 202 to 206. Wherein:

[0046] Step 202: Obtain information on the thickness of the oxide film generated during the production process of capacitor foil.

[0047] In the production process of capacitor forming foil, since the forming foil is made of metal material, an oxide film will form on the surface of the forming foil. The thickness of this oxide film usually affects the capacitance of the capacitor forming foil. Taking aluminum forming foil as an example, an aluminum oxide layer will form on the surface of the aluminum forming foil. The thickness of this oxide film is usually related to the specific production process parameters of the capacitor forming foil. After obtaining the specific production process parameters of the capacitor forming foil, the corresponding oxide film thickness information can be found.

[0048] As an example, step 202 includes: obtaining the production process parameters of the capacitor forming foil during the production process; and querying the oxide film thickness information generated by the capacitor forming foil during the production process based on the production process parameters.

[0049] Step 204: Based on the thickness information of the oxide film and the radius information of the pores in the etched foil of the capacitor forming foil, detect the microscopic parameter information of the forming pores in the capacitor forming foil.

[0050] In the production process of capacitor forming foil, multiple etched foil pores are typically formed. An oxide film is generated on the walls and bottom of these pores, and this oxide film grows inward and outward to form the forming pores. These forming pores have microscopic parameters such as pore depth, inner diameter, and outer diameter, which affect the capacitance of the forming pores in the capacitor forming foil. An oxide film is also formed on the surface of the capacitor forming foil. Therefore, the surface oxidation microscopic parameters of the capacitor forming foil include the surface consumption thickness, which affects the surface capacitance of the capacitor forming foil.

[0051] As an example, step 204 includes: obtaining the etched foil hole radius information of the capacitor forming foil, wherein the etched foil hole radius information is usually a known parameter designed for the production of the capacitor forming foil; detecting the outer radius information and inner radius information of the forming holes in the capacitor forming foil based on the etched foil hole radius information and the oxide film thickness information; obtaining the etched foil hole depth information of the capacitor forming foil, wherein the etched foil hole depth information is usually a known parameter designed for the production of the capacitor forming foil; and detecting the hole depth information of the forming holes in the capacitor forming foil based on the etched foil hole depth information and the oxide film thickness information.

[0052] In one embodiment, the pore micro-parameter information includes the outer radius information and the inner radius information of the formed pores; based on the oxide film thickness information and the pore radius information of the etched foil of the capacitor formed foil, the pore micro-parameter information of the formed pores in the capacitor formed foil is detected, including:

[0053] Based on the first correlation model, the pore radius information of the etched foil, and the oxide film thickness information, the outer radius information of the formation pores in the capacitor forming foil is detected. The first correlation model is used to characterize the correlation relationship among the pore radius information of the etched foil, the oxide film thickness information, and the outer radius information of the formation pores. Based on the second correlation model, the pore radius information of the etched foil, and the oxide film thickness information, the inner radius information of the formation pores in the capacitor forming foil is detected. The second correlation model is used to characterize the correlation relationship among the pore radius information of the etched foil, the oxide film thickness information, and the inner radius information of the formation pores.

[0054] In this embodiment, a first correlation model is provided, which represents the correlation between the pore radius information of the etched foil, the thickness information of the oxide film, and the outer radius information of the formed hole. Thus, by inputting the pore radius information of the etched foil and the thickness information of the oxide film into the first correlation model, the radius information of the formed hole can be obtained. A second model is also provided, which represents the correlation between the pore radius information of the etched foil, the thickness information of the oxide film, and the inner radius information of the formed hole. By inputting the pore radius information of the etched foil and the thickness information of the oxide film into the second model, the inner radius information of the formed hole can be obtained.

[0055] In addition, a third correlation model can be set in this embodiment. This third correlation model represents the correlation between the hole radius information of the etched foil, the thickness information of the oxide film, and the surface consumption thickness when the capacitor forming foil is oxidized. By inputting the hole radius information of the etched foil and the thickness information of the oxide film into the third correlation model, the surface consumption thickness when the capacitor forming foil is oxidized can be obtained.

[0056] As an example, let's take the aluminum capacitor foil forming process as an illustration. Assuming that there is no aluminum loss during the oxidation process of the capacitor foil forming process, the molar mass of aluminum consumed during the oxidation process of the capacitor foil forming process is twice the molar mass of aluminum dioxide produced. Therefore, we can obtain equation (1):

[0057]

[0058] in, The diameter of the etched foil pores in the capacitor foil is [missing information]. To determine the depth of the hole, The density of aluminum, The molar mass of aluminum, To form the outer radius of the hole, To form the inner radius of the hole, The density of aluminum oxide. denoted as α, where α is the molar mass of aluminum oxide.

[0059] Furthermore, based on the geometric relationship between the diameter of the etched foil pores, the outer radius of the etched pores, and the surface thickness consumed during oxidation of the capacitor foil, equation (2) can be obtained:

[0060]

[0061] in, To form the outer radius of the hole, The diameter of the etched foil pores in the capacitor foil is [missing information]. This refers to the surface thickness consumed during the oxidation of the capacitor foil.

[0062] Furthermore, based on the geometric relationship between the inner radius of the formed pore, the outer radius of the formed pore, and the thickness of the oxide film, we can obtain equation (3):

[0063]

[0064] in, To form the outer radius of the hole, To form the inner radius of the hole, The thickness of the oxide film formed after the capacitor foil undergoes oxidation.

[0065] Furthermore, by combining equations (1), (2), and (3), we can obtain:

[0066] First association model:

[0067]

[0068] Second association model:

[0069]

[0070] Third association model:

[0071]

[0072] Step 206: Detect the capacitance of the capacitor foil based on the oxide film thickness information and pore micro-parameter information.

[0073] As an example, step 206 includes: detecting the capacitance of the formed holes and the surface capacitance of the capacitor formed foil based on the information of the outer radius, inner radius, depth, and oxide film thickness of the formed holes in the capacitor formed foil; and merging the capacitance of the formed holes and the surface capacitance of the capacitor formed foil to obtain the capacitance of the capacitor formed foil.

[0074] It should be noted that, in order to improve the accuracy of capacitance detection of capacitor foil, some other micro parameters can be added as the basis for capacitance detection, such as dielectric constant and surface thickness consumed when capacitor foil is oxidized.

[0075] In the above-mentioned capacitor forming foil capacitance detection method, the thickness of the oxide film and the radius of the pores in the etched foil generated during the capacitor forming foil production process are first detected. Then, based on the oxide film thickness and the pore radius of the etched foil, the microscopic parameters of the forming holes in the capacitor forming foil and the capacitor forming foil itself are detected. This achieves the detection of the microscopic parameters of the forming holes in the capacitor forming foil, and thus the capacitance of the capacitor forming foil is detected based on the oxide film thickness and the microscopic parameters of the holes. This method achieves capacitance measurement based on the microscopic parameters of the capacitor forming foil. Compared with the macroscopic parameters of the capacitor forming foil, the microscopic parameters are more accurate in characterizing the influencing factors of the capacitor forming foil, thus improving the accuracy of capacitor capacitance detection.

[0076] In one exemplary embodiment, such as Figure 2 As shown, the microscopic parameter information of the formed hole includes the hole depth information, the outer radius information of the formed hole, and the inner radius information of the formed hole; step 206 includes steps 302 to 306. Wherein:

[0077] Step 302: Detect the capacitance of the capacitor foil through the oxide film based on the thickness information, outer radius information, inner radius information, and depth information of the formed hole.

[0078] The capacitance of the formed via includes the capacitance of the via wall and the capacitance of the via bottom; the outer radius information of the formed via refers to the outer radius of the formed via, which can be considered as the radius of the via after removing the oxide film on the via wall; the inner radius information of the formed via refers to the inner radius of the formed via, which can be considered as the radius of the via including the oxide film on the via wall; the via depth information is specifically the depth of the formed via.

[0079] As an example, refer to Figure 3 , Figure 3 This is a schematic diagram of the etched foil holes in one embodiment, where d is the radius of the etched foil holes in the capacitor foil. Oxidation of the hole walls and surfaces forms formation holes. Further, refer to... Figure 4 , Figure 4 This is a schematic diagram of a formed hole in one embodiment, where d is the radius of the etched foil hole in the capacitor formed foil, R is the outer radius of the formed hole, r is the inner radius of the formed hole, t is the thickness of the oxide film, and a1 is the surface consumption thickness of the capacitor formed foil surface where oxidation occurs.

[0080] It should be noted that this embodiment includes a pore wall capacity detection model and a pore bottom capacity detection model. The pore wall capacity detection model is used to detect the pore wall capacity based on the input pore depth information, the outer radius information of the formed pore, and the inner radius information of the formed pore. The pore bottom capacity detection model is used to detect the pore bottom capacity based on the input inner radius information of the formed pore and the thickness information of the oxide film.

[0081] As an example, step 302 includes: detecting the wall capacity of the formed holes of the capacitor formed foil by inputting the hole depth information, the outer radius information of the formed holes, and the inner radius information of the formed holes into the hole wall capacity detection model; and detecting the bottom capacity of the formed holes of the capacitor formed foil by inputting the inner radius information of the formed holes and the thickness information of the oxide film into the hole bottom capacity detection model.

[0082] It should be noted that the pore wall capacity detection model can be a pre-trained AI model. The input variables of the pore wall capacity detection model are pore depth information, outer radius information of the formed pore, and inner radius information of the formed pore. The output result is the pore wall capacity of the formed pore. The pore bottom capacity detection model can also be a pre-trained AI model. The input variables of the pore bottom capacity detection model are inner radius information of the formed pore and thickness information of the oxide film. The output result is the pore bottom capacity of the formed pore. In addition, other variables can be added to the input variables of the pore wall capacity detection model and the pore bottom capacity detection model, such as the surface consumption thickness of the capacitor formed foil, dielectric constant, material type information of the capacitor formed foil, or number of formed pores, etc.

[0083] In one embodiment, the capacitance of the formed-hole includes the capacitance of the formed-hole wall and the capacitance of the formed-hole bottom; the capacitance of the formed-hole of the capacitor foil is detected based on the oxide film thickness information, the outer radius information of the formed-hole, the inner radius information of the formed-hole, and the hole depth information, including:

[0084] Based on the dielectric constant, outer radius, inner radius, and depth of the capacitor forming foil, the capacitance of the forming hole wall is detected; based on the dielectric constant and oxide film thickness of the capacitor forming foil, the capacitance of the forming hole bottom is detected.

[0085] Among them, the hole wall capacity detection model and the hole bottom capacity detection model can also be preset calculation models. The hole wall capacity of the formed hole can be the hole wall capacity of a single formed hole, and the hole bottom capacity of the formed hole can be the hole bottom capacity of a single formed hole.

[0086] As an example, the calculation expression corresponding to the pore wall capacity detection model is as follows:

[0087]

[0088] in, The wall capacity of a single formed hole. Where is the dielectric constant. To determine the depth of the hole, To form the outer radius of the hole, Let be the inner radius of the formed hole.

[0089] As an example, the calculation expression corresponding to the bottom capacity detection model is as follows:

[0090]

[0091] in, The bottom capacity of a single formation hole, Where is the dielectric constant. The thickness of the oxide film.

[0092] Step 304: Detect the surface capacitance of the capacitor foil based on the information of the inner radius of the formed hole and the thickness of the oxide film.

[0093] In this embodiment, a surface capacity detection model for capacitor forming foil is also provided. This surface capacity detection model can be a trained AI model or a pre-set specific calculation model. The input variables of the surface capacity detection model are the inner radius information of the forming pore and the thickness information of the oxide film.

[0094] As an example, the calculation expression for the surface capacity detection model is as follows:

[0095]

[0096] in, The surface capacitance of one side of the capacitor foil. Where is the dielectric constant. Let be the area of ​​one side of the capacitor foil. To form the inner radius of the hole, The thickness of the oxide film, This represents the number of formation holes on the capacitor forming foil.

[0097] Step 306: Generate the capacitance of the capacitor foil based on the capacitance of the formed hole and the capacitance of the surface.

[0098] As an example, step 306 includes: combining the surface capacitance of the capacitor foil, the wall capacitance of all formed holes, and the bottom capacitance of all formed holes to obtain the capacitance of the capacitor foil.

[0099] In this embodiment, after obtaining the microscopic parameters of the capacitor forming foil, such as the thickness of the oxide film, the outer radius of the forming hole, the inner radius of the forming hole, and the depth of the forming hole, the forming hole capacitance of the capacitor forming foil can be detected based on the oxide film thickness, forming hole outer radius, forming hole inner radius, and depth information. Furthermore, the surface capacitance of the capacitor forming foil can be detected based on the forming hole inner radius and oxide film thickness information. This achieves quantitative detection of both the forming hole capacitance and the surface capacitance of the capacitor forming foil, thus enabling quantitative detection of the capacitor forming foil's capacitance. Compared to fuzzy detection based on macroscopic parameters, this significantly improves the accuracy of capacitance detection for the capacitor forming foil.

[0100] In one embodiment, the via capacitance includes the via wall capacitance and the via bottom capacitance; based on the via capacitance and the surface capacitance, the capacitance of the capacitor foil is generated, including:

[0101] The number of forming holes in the capacitor forming foil is detected based on the hole spacing between forming holes and the total surface area of ​​the capacitor forming foil. The capacitance of the capacitor forming foil is generated based on the number of forming holes, the hole wall capacitance, the hole bottom capacitance, and the surface capacitance.

[0102] In this embodiment, an aluminum capacitor is used as an example for explanation. The centers of adjacent forming holes in the capacitor forming foil can be connected to form an equilateral triangle, and the centers of each forming hole on the capacitor forming foil are evenly distributed in the form of such equilateral triangles.

[0103] Specifically, the shortest distance between adjacent forming holes in the capacitor forming foil is obtained, wherein the shortest distance is a known distance when designing and manufacturing the capacitor forming foil. The center-to-center distance between forming holes in the capacitor forming foil is determined based on the shortest distance. Based on the center-to-center distance and the total surface area of ​​the capacitor forming foil, the number of equilateral triangles formed by the center of the forming holes on the capacitor forming foil is detected. The number of forming holes is determined based on the number of equilateral triangles. The capacitance of the capacitor forming foil is generated based on the number of forming holes, the wall capacitance of the forming holes, the bottom capacitance of the forming holes, and the surface capacitance.

[0104] As an example, the formula for calculating the number of formed holes is as follows:

[0105]

[0106] in, The surface area of ​​one side of the capacitor foil. This refers to the center-to-center distance between adjacent formation holes in the capacitor formation foil. This refers to the number of forming holes on one side of the capacitor forming foil.

[0107] As an example, the calculation process for the capacitance (double-sided) of a capacitor formed into foil is as follows:

[0108]

[0109] in, The capacitance of a capacitor is formed into foil (double-sided). This refers to the number of formation holes on one side of the capacitor's formation foil. The wall capacity of a single formed hole. The bottom capacity of a single formation hole, The surface capacitance of one side of the capacitor foil.

[0110] As an example, before detecting the number of formation holes in the capacitor forming foil based on the hole spacing between formation holes and the total surface area of ​​the capacitor forming foil, the method further includes:

[0111] The shortest distance between adjacent forming holes in the capacitor forming foil is detected; based on the shortest distance and the outer radius information of the forming holes in the capacitor forming foil, the center-to-center distance between forming holes in the capacitor forming foil is detected.

[0112] As an example, refer to Figure 5 , Figure 5 This is a schematic diagram showing the distribution of the formation holes on the capacitor formation foil in one embodiment, wherein, It represents the shortest spacing between adjacent forming holes in the capacitor forming foil.

[0113] The process for calculating the center-to-center spacing between the vias in the capacitor forming foil is as follows:

[0114]

[0115] in, The outer radius of the forming hole in the capacitor forming foil. It represents the shortest spacing between adjacent forming holes in the capacitor forming foil.

[0116] In this embodiment, after detecting the capacitance of the via wall, the capacitance of the via bottom, and the surface capacitance, the number of vias in the capacitor forming foil is further detected based on the hole spacing between the vias and the total surface area of ​​the capacitor forming foil. This allows for the quantitative and accurate merging of the via wall capacitance, via bottom capacitance, and surface capacitance based on the number of vias, achieving accurate capacitance detection of the capacitor forming foil and improving detection accuracy.

[0117] In a complete embodiment, firstly, the production process parameters of the capacitor forming foil during the production process are obtained; and based on these production process parameters, the oxide film thickness information generated during the production process of the capacitor forming foil is queried; the etched foil hole radius information of the capacitor forming foil is obtained, wherein the etched foil hole radius information is usually a known parameter designed for the production and preparation of the capacitor forming foil; based on the etched foil hole radius information and the oxide film thickness information, the outer radius information and inner radius information of the forming holes in the capacitor forming foil are detected; the etched foil hole depth information of the capacitor forming foil is obtained, wherein the etched foil hole depth information is usually a known parameter designed for the production and preparation of the capacitor forming foil; based on the etched foil hole depth information and the oxide film thickness information, the hole depth information of the forming holes in the capacitor forming foil is detected.

[0118] Furthermore, by inputting the hole depth information, the outer radius information, and the inner radius information of the formed holes into the hole wall capacity detection model, the hole wall capacity of the capacitor formed foil is detected; by inputting the inner radius information of the formed holes and the thickness information of the oxide film into the hole bottom capacity detection model, the hole bottom capacity of the capacitor formed foil is detected; by inputting the inner radius information of the formed holes and the thickness information of the oxide film into the surface capacity detection model, the surface capacitance of the capacitor formed foil is detected; the shortest distance between adjacent formed holes in the capacitor formed foil is detected; based on the shortest distance and the outer radius information of the formed holes in the capacitor formed foil, the center-to-center distance between formed holes in the capacitor formed foil is detected; based on the center-to-center distance and the total surface area of ​​the capacitor formed foil, the number of equilateral triangles formed by the center of the formed holes on the capacitor formed foil is detected, and the number of formed holes is determined based on the number of equilateral triangles; based on the number of formed holes, the hole wall capacity, the hole bottom capacity, and the surface capacitance, the capacitance of the capacitor formed foil is generated.

[0119] This embodiment realizes the measurement of capacitance based on the micro parameters of capacitor foil. Compared with the macro parameters of capacitor foil, the micro parameters are more accurate in characterizing the influencing factors of capacitance of capacitor foil, thus improving the accuracy of capacitance detection.

[0120] It should be understood that although the steps in the flowcharts of the embodiments described above are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the embodiments described above may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages of other steps.

[0121] Based on the same inventive concept, this application also provides a capacitor foil capacitance detection device for implementing the capacitor foil capacitance detection method described above. The solution provided by this device is similar to the solution described in the above method; therefore, the specific limitations in one or more embodiments of the capacitor foil capacitance detection device provided below can be found in the limitations of the capacitor foil capacitance detection method described above, and will not be repeated here.

[0122] In one exemplary embodiment, such as Figure 6 As shown, a capacitor foil capacitance detection device is provided, comprising: an acquisition module, a parameter detection module, and a capacitance detection module, wherein:

[0123] The acquisition module is used to acquire information on the thickness of the oxide film generated during the production process of capacitor foil.

[0124] The parameter detection module is used to detect the microscopic parameters of the pores in the capacitor forming foil based on the thickness information of the oxide film and the radius information of the pores in the etched foil of the capacitor forming foil.

[0125] The capacity detection module is used to detect the capacity of the capacitor foil based on the oxide film thickness information and the pore micro-parameter information.

[0126] In one embodiment, the microscopic parameter information of the pore includes pore depth information, outer radius information of the formed pore, and inner radius information of the formed pore; the capacity detection module is further used for:

[0127] Based on the thickness information of the oxide film, the outer radius information of the formation hole, the inner radius information of the formation hole, and the hole depth information, the formation hole capacitance of the capacitor forming foil is detected; based on the inner radius information of the formation hole and the thickness information of the oxide film, the surface capacitance of the capacitor forming foil is detected; based on the formation hole capacitance and the surface capacitance, the capacitance of the capacitor forming foil is generated.

[0128] In one embodiment, the via capacitance includes the via wall capacitance and the via bottom capacitance; the capacitance detection module is further configured to:

[0129] Based on the dielectric constant of the capacitor foil, the outer radius information of the formed via, the inner radius information of the formed via, and the via depth information, the via wall capacitance of the capacitor foil is detected; based on the dielectric constant of the capacitor foil and the oxide film thickness information, the via bottom capacitance of the capacitor foil is detected.

[0130] In one embodiment, the via capacitance includes the via wall capacitance and the via bottom capacitance; the capacitance detection module is further configured to:

[0131] The number of forming holes in the capacitor forming foil is detected based on the hole spacing between forming holes and the total surface area of ​​the capacitor forming foil; the capacity of the capacitor forming foil is generated based on the number of forming holes, the hole wall capacity, the hole bottom capacity, and the surface capacitance.

[0132] In one embodiment, the capacity detection module is further configured to:

[0133] The shortest distance between adjacent forming holes in the capacitor forming foil is detected; based on the shortest distance and the outer radius information of the forming holes in the capacitor forming foil, the center-to-center distance between the forming holes in the capacitor forming foil is detected.

[0134] In one embodiment, the microscopic parameter information of the formed hole includes the outer radius information and the inner radius information of the formed hole; the capacity detection module is further used for:

[0135] Based on the first correlation model, the hole radius information of the etched foil, and the thickness information of the oxide film, the outer radius information of the formation hole of the capacitor forming foil is detected. The first correlation model characterizes the correlation between the hole radius information of the etched foil, the thickness information of the oxide film, and the outer radius information of the formation hole. Based on the second correlation model, the hole radius information of the etched foil, and the thickness information of the oxide film, the inner radius information of the formation hole of the capacitor forming foil is detected. The second correlation model characterizes the correlation between the hole radius information of the etched foil, the thickness information of the oxide film, and the inner radius information of the formation hole.

[0136] Each module in the aforementioned capacitor forming foil capacitance detection device can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in or independent of the processor in a computer device, or stored in the memory of a computer device as software, so that the processor can call and execute the operations corresponding to each module.

[0137] In one exemplary embodiment, a computer device is provided, which may be a terminal, and its internal structure diagram may be as follows: Figure 7 As shown, the computer device includes a processor, memory, input / output interface, communication interface, display unit, and input device. The processor, memory, and input / output interface are connected via a system bus, and the communication interface, display unit, and input device are also connected to the system bus via the input / output interface. The processor provides computing and control capabilities. The memory includes a non-volatile storage medium and internal memory. The non-volatile storage medium stores the operating system and computer programs. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage medium. The input / output interface is used for exchanging information between the processor and external devices. The communication interface is used for wired or wireless communication with external terminals; wireless communication can be achieved through Wi-Fi, mobile cellular networks, Near Field Communication (NFC), or other technologies. When executed by the processor, the computer program implements a capacitor foil capacitance detection method.

[0138] Those skilled in the art will understand that Figure 7 The structure shown is merely a block diagram of a portion of the structure related to the present application and does not constitute a limitation on the computer device to which the present application is applied. Specific computer devices may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0139] In one exemplary embodiment, a computer device is provided, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to perform the following steps:

[0140] Obtain information on the thickness of the oxide film generated during the production process of capacitor foil;

[0141] Based on the thickness information of the oxide film and the radius information of the pores in the etched foil of the capacitor foil, the microscopic parameters of the pores in the capacitor foil are detected.

[0142] The capacitance of the capacitor foil is detected based on the oxide film thickness information and the pore microstructure information.

[0143] In one embodiment, the aperture micro-parameter information includes aperture depth information, formed aperture outer radius information, and formed aperture inner radius information; when the processor executes the computer program, it also performs the following steps:

[0144] Based on the thickness information of the oxide film, the outer radius information of the formation hole, the inner radius information of the formation hole, and the hole depth information, the formation hole capacitance of the capacitor forming foil is detected; based on the inner radius information of the formation hole and the thickness information of the oxide film, the surface capacitance of the capacitor forming foil is detected; based on the formation hole capacitance and the surface capacitance, the capacitance of the capacitor forming foil is generated.

[0145] In one embodiment, the via capacitance includes the via wall capacitance and the via bottom capacitance; the processor, when executing the computer program, further implements the following steps:

[0146] Based on the dielectric constant of the capacitor foil, the outer radius information of the formed via, the inner radius information of the formed via, and the via depth information, the via wall capacitance of the capacitor foil is detected; based on the dielectric constant of the capacitor foil and the oxide film thickness information, the via bottom capacitance of the capacitor foil is detected.

[0147] In one embodiment, the via capacitance includes the via wall capacitance and the via bottom capacitance; the processor, when executing the computer program, further implements the following steps:

[0148] The number of forming holes in the capacitor forming foil is detected based on the hole spacing between forming holes and the total surface area of ​​the capacitor forming foil; the capacity of the capacitor forming foil is generated based on the number of forming holes, the hole wall capacity, the hole bottom capacity, and the surface capacitance.

[0149] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0150] The shortest distance between adjacent forming holes in the capacitor forming foil is detected; based on the shortest distance and the outer radius information of the forming holes in the capacitor forming foil, the center-to-center distance between the forming holes in the capacitor forming foil is detected.

[0151] In one embodiment, the aperture micro-parameter information includes the outer radius information and the inner radius information of the formed aperture; when the processor executes the computer program, it also implements the following steps:

[0152] Based on the first correlation model, the hole radius information of the etched foil, and the thickness information of the oxide film, the outer radius information of the formation hole of the capacitor forming foil is detected. The first correlation model characterizes the correlation between the hole radius information of the etched foil, the thickness information of the oxide film, and the outer radius information of the formation hole. Based on the second correlation model, the hole radius information of the etched foil, and the thickness information of the oxide film, the inner radius information of the formation hole of the capacitor forming foil is detected. The second correlation model characterizes the correlation between the hole radius information of the etched foil, the thickness information of the oxide film, and the inner radius information of the formation hole.

[0153] In one embodiment, a computer-readable storage medium is provided having a computer program stored thereon, the computer program performing the following steps when executed by a processor:

[0154] Obtain information on the thickness of the oxide film generated during the production process of capacitor foil;

[0155] Based on the thickness information of the oxide film and the radius information of the pores in the etched foil of the capacitor foil, the microscopic parameters of the pores in the capacitor foil are detected.

[0156] The capacitance of the capacitor foil is detected based on the oxide film thickness information and the pore microstructure information.

[0157] In one embodiment, the microscopic parameter information of the hole includes hole depth information, outer radius information of the formed hole, and inner radius information of the formed hole; when the computer program is executed by the processor, it also performs the following steps:

[0158] Based on the thickness information of the oxide film, the outer radius information of the formation hole, the inner radius information of the formation hole, and the hole depth information, the formation hole capacitance of the capacitor forming foil is detected; based on the inner radius information of the formation hole and the thickness information of the oxide film, the surface capacitance of the capacitor forming foil is detected; based on the formation hole capacitance and the surface capacitance, the capacitance of the capacitor forming foil is generated.

[0159] In one embodiment, the via capacitance includes the via wall capacitance and the via bottom capacitance; when the computer program is executed by the processor, it further performs the following steps:

[0160] Based on the dielectric constant of the capacitor foil, the outer radius information of the formed via, the inner radius information of the formed via, and the via depth information, the via wall capacitance of the capacitor foil is detected; based on the dielectric constant of the capacitor foil and the oxide film thickness information, the via bottom capacitance of the capacitor foil is detected.

[0161] In one embodiment, the via capacitance includes the via wall capacitance and the via bottom capacitance; when the computer program is executed by the processor, it further performs the following steps:

[0162] The number of forming holes in the capacitor forming foil is detected based on the hole spacing between forming holes and the total surface area of ​​the capacitor forming foil; the capacity of the capacitor forming foil is generated based on the number of forming holes, the hole wall capacity, the hole bottom capacity, and the surface capacitance.

[0163] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0164] The shortest distance between adjacent forming holes in the capacitor forming foil is detected; based on the shortest distance and the outer radius information of the forming holes in the capacitor forming foil, the center-to-center distance between the forming holes in the capacitor forming foil is detected.

[0165] In one embodiment, the aperture micro-parameter information includes the outer radius information and the inner radius information of the formed aperture; when the computer program is executed by the processor, it further implements the following steps:

[0166] Based on the first correlation model, the hole radius information of the etched foil, and the thickness information of the oxide film, the outer radius information of the formation hole of the capacitor forming foil is detected. The first correlation model characterizes the correlation between the hole radius information of the etched foil, the thickness information of the oxide film, and the outer radius information of the formation hole. Based on the second correlation model, the hole radius information of the etched foil, and the thickness information of the oxide film, the inner radius information of the formation hole of the capacitor forming foil is detected. The second correlation model characterizes the correlation between the hole radius information of the etched foil, the thickness information of the oxide film, and the inner radius information of the formation hole.

[0167] In one embodiment, a computer program product is provided, including a computer program that, when executed by a processor, performs the following steps:

[0168] Obtain information on the thickness of the oxide film generated during the production process of capacitor foil;

[0169] Based on the thickness information of the oxide film and the radius information of the pores in the etched foil of the capacitor foil, the microscopic parameters of the pores in the capacitor foil are detected.

[0170] The capacitance of the capacitor foil is detected based on the oxide film thickness information and the pore microstructure information.

[0171] In one embodiment, the microscopic parameter information of the hole includes hole depth information, outer radius information of the formed hole, and inner radius information of the formed hole; when the computer program is executed by the processor, it also implements the following steps:

[0172] Based on the thickness information of the oxide film, the outer radius information of the formation hole, the inner radius information of the formation hole, and the hole depth information, the formation hole capacitance of the capacitor forming foil is detected; based on the inner radius information of the formation hole and the thickness information of the oxide film, the surface capacitance of the capacitor forming foil is detected; based on the formation hole capacitance and the surface capacitance, the capacitance of the capacitor forming foil is generated.

[0173] In one embodiment, the via capacitance includes the via wall capacitance and the via bottom capacitance; when the computer program is executed by the processor, it further performs the following steps:

[0174] Based on the dielectric constant of the capacitor foil, the outer radius information of the formed via, the inner radius information of the formed via, and the via depth information, the via wall capacitance of the capacitor foil is detected; based on the dielectric constant of the capacitor foil and the oxide film thickness information, the via bottom capacitance of the capacitor foil is detected.

[0175] In one embodiment, the via capacitance includes the via wall capacitance and the via bottom capacitance; when the computer program is executed by the processor, it further performs the following steps:

[0176] The number of forming holes in the capacitor forming foil is detected based on the hole spacing between forming holes and the total surface area of ​​the capacitor forming foil; the capacity of the capacitor forming foil is generated based on the number of forming holes, the hole wall capacity, the hole bottom capacity, and the surface capacitance.

[0177] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0178] The shortest distance between adjacent forming holes in the capacitor forming foil is detected; based on the shortest distance and the outer radius information of the forming holes in the capacitor forming foil, the center-to-center distance between the forming holes in the capacitor forming foil is detected.

[0179] In one embodiment, the aperture micro-parameter information includes the outer radius information and the inner radius information of the formed aperture; when the computer program is executed by the processor, it further implements the following steps:

[0180] Based on the first correlation model, the hole radius information of the etched foil, and the thickness information of the oxide film, the outer radius information of the formation hole of the capacitor forming foil is detected. The first correlation model characterizes the correlation between the hole radius information of the etched foil, the thickness information of the oxide film, and the outer radius information of the formation hole. Based on the second correlation model, the hole radius information of the etched foil, and the thickness information of the oxide film, the inner radius information of the formation hole of the capacitor forming foil is detected. The second correlation model characterizes the correlation between the hole radius information of the etched foil, the thickness information of the oxide film, and the inner radius information of the formation hole.

[0181] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the above methods. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile memory and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, artificial intelligence (AI) processors, etc., and are not limited to these.

[0182] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this application.

[0183] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A method for detecting the capacitance of a capacitor formed in foil, characterized in that, The method includes: Obtain information on the thickness of the oxide film generated during the production process of capacitor foil; Based on the thickness information of the oxide film and the radius information of the pores in the etched foil of the capacitor foil, the microscopic parameters of the pores in the capacitor foil are detected. The capacitance of the capacitor foil is detected based on the oxide film thickness information and the pore microstructure information.

2. The method according to claim 1, characterized in that, The microscopic parameters of the pores include pore depth information, outer radius information of the formed pores, and inner radius information of the formed pores; the step of detecting the capacitance of the capacitor foil based on the oxide film thickness information and the microscopic parameters of the pores includes: The capacitance of the capacitor foil formed by forming holes is detected based on the thickness information of the oxide film, the outer radius information of the formed holes, the inner radius information of the formed holes, and the hole depth information. The surface capacitance of the capacitor foil is detected based on the inner radius information of the formed hole and the thickness information of the oxide film. The capacitance of the capacitor foil is generated based on the capacitance of the formed hole and the capacitance of the surface.

3. The method according to claim 2, characterized in that, The via capacitance includes the via wall capacitance and the via bottom capacitance; the step of detecting the via capacitance of the capacitor foil based on the oxide film thickness information, the via outer radius information, the via inner radius information, and the via depth information includes: Based on the dielectric constant of the capacitor foil, the outer radius of the via, the inner radius of the via, and the depth of the via, the via wall capacity of the capacitor foil is detected. The capacitance at the bottom of the formed-hole of the capacitor foil is detected based on the dielectric constant of the capacitor foil and the thickness information of the oxide film.

4. The method according to claim 2, characterized in that, The capacitance of the formed hole includes the capacitance of the formed hole wall and the capacitance of the formed hole bottom; The step of generating the capacitance of the capacitor foil based on the capacitance of the formed aperture and the capacitance of the surface includes: The number of forming holes in the capacitor forming foil is detected based on the hole spacing between forming holes in the capacitor forming foil and the total surface area of ​​the capacitor forming foil. The capacitance of the capacitor foil is generated based on the number of formed holes, the wall capacity of the formed holes, the bottom capacity of the formed holes, and the surface capacitance.

5. The method according to claim 4, characterized in that, Before detecting the number of formed holes in the capacitor formed foil based on the hole spacing between formed holes and the total surface area of ​​the capacitor formed foil, the method further includes: Detect the shortest distance between adjacent formation holes in the capacitor formation foil; Based on the shortest spacing and the outer radius information of the formed holes in the capacitor formed foil, the center-to-center spacing between the formed holes in the capacitor formed foil is detected.

6. The method according to claim 1, characterized in that, The microscopic parameter information of the pores includes the outer radius information and the inner radius information of the formed pores; the step of detecting the microscopic parameter information of the formed pores in the capacitor formed foil based on the thickness information of the oxide film and the radius information of the etched foil pores of the capacitor formed foil includes: Based on the first correlation model, the hole radius information of the etched foil, and the thickness information of the oxide film, the outer radius information of the formation hole of the capacitor formation foil is detected. The first correlation model is used to characterize the correlation relationship among the hole radius information of the etched foil, the thickness information of the oxide film, and the outer radius information of the formation hole. Based on the second correlation model, the hole radius information of the etched foil, and the thickness information of the oxide film, the inner radius information of the formation hole of the capacitor forming foil is detected. The second correlation model is used to characterize the correlation relationship among the hole radius information of the etched foil, the thickness information of the oxide film, and the inner radius information of the formation hole.

7. A capacitor foil capacitance detection device, characterized in that, The device includes: The acquisition module is used to acquire information on the thickness of the oxide film generated during the production process of capacitor foil. The parameter detection module is used to detect the microscopic parameters of the pores in the capacitor forming foil based on the thickness information of the oxide film and the radius information of the pores in the etched foil of the capacitor forming foil. The capacity detection module is used to detect the capacity of the capacitor foil based on the oxide film thickness information and the pore micro-parameter information.

8. A computer device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that, When the processor executes the computer program, it implements the steps of the method according to any one of claims 1 to 6.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 6.

10. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 6.

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