Self-storage voltage comparator

Abstract

The invention relates to a self-storage voltage comparator, and belongs to the technical field of electronic components. The device comprises a substrate, a transition metal chalcogenide, a metal phosphorus-sulfur (selenide), a source electrode, a drain electrode and an input electrode, the metal phosphorus-sulfur (selenide) is located on the upper surface of the transition metal chalcogenide, and the input electrode is located on the upper surface of the metal phosphorus-sulfur (selenide). The source electrode and the drain electrode are located at the two ends of the transition metal chalcogenide and are electrically communicated with the transition metal chalcogenide. According to the invention, the transition metal chalcogenide and the metal phosphorus-sulfur (selenide) form an integrated device of a field effect transistor and a memristor, an input voltage is identified and compared by using a competitive mechanism between ferroelectricity and ionic conductivity of the metal phosphorus-sulfur (selenide), and a comparison result can be stored in a nonvolatile manner.

Description

Technical Field

[0001] This invention relates to voltage comparator technology in the field of electronic components, and more particularly to a self-storage voltage comparator. Background Technology

[0002] A voltage comparator is a circuit that identifies and compares input signals, and it is a basic unit circuit for building non-sinusoidal wave generation circuits. Commonly used voltage comparators include single-limit comparators, hysteresis comparators, window comparators, and three-state voltage comparators. Voltage comparators can be used as interfaces between analog and digital circuits, and also as waveform generation and transformation circuits. A simple voltage comparator can convert a sine wave into a square wave or rectangular wave of the same frequency. As a commonly used integrated circuit, it can be used in alarm circuits, automatic control circuits, measurement technology, as well as V / F conversion circuits, A / D conversion circuits, high-speed sampling circuits, power supply voltage monitoring circuits, oscillators and voltage-controlled oscillators, zero-crossing detection circuits, etc.

[0003] Two-dimensional materials have attracted much attention due to their rich properties. For example, the two-dimensional ferroelectric material copper indium phosphorus sulfide (CuInP2S6) has four different conduction mechanisms due to the coupling of ferroelectricity and ionic conductivity. These include frozen polarization state, ferroelectric polarization state, Cu ion jump state, and conductive filament state. The competition mechanism of these states is affected by the applied electric field, thus providing more tunability for electronic devices based on this material and enabling richer functionalities, such as the identification and comparison of applied fields. Summary of the Invention

[0004] In view of this, the present invention proposes a self-storing voltage comparator. The comparator is composed of a transition metal chalcogenide (TMDC) and a metal phosphorus sulfide (MPSC), and utilizes the competition mechanism between the ferroelectricity and ionic conductivity of the metal phosphorus sulfide (MPSC) to identify and compare the input signal and store the comparison result.

[0005] To achieve the above objectives, the present invention provides a self-storing voltage comparator, comprising a substrate 1, a transition metal chalcogenide 2, a metal phosphorus sulfide (selenide) 3, a source electrode 4, a drain electrode 5, and an input electrode 6. The transition metal chalcogenide 2 is located on the upper surface of the substrate 1, the metal phosphorus sulfide (selenide) 3 is located on the upper surface of the transition metal chalcogenide 2, the input electrode 6 is located on the upper surface of the metal phosphorus sulfide (selenide) 3, and the source electrode 4 and the drain electrode 5 are located at both ends of the transition metal chalcogenide 2 and are electrically connected to the transition metal chalcogenide 2.

[0006] Furthermore, the substrate 1 is an insulating dielectric material.

[0007] Furthermore, the transition metal chalcogenide 2 is a material having the chemical formula MX2, wherein M is one of Mo, W, Pt, Hf, Ti, Bi, Ga, and Sn, and X is one of O, S, Se, and Te.

[0008] Furthermore, the thickness of the transition metal chalcogenide layer 2 ranges from 0.5 to 50 nanometers.

[0009] Furthermore, the metal phosphorus sulfide (selenide) 3 is a material having the chemical formula MM'X2Y6, wherein M is one of Cu, Ag, Fe, Co, Ni, and Zn, M' is one of In, Sn, Sc, Bi, and Pb, X is P, and Y is one of S and Se.

[0010] Furthermore, the thickness of the metal phosphorus sulfide (selenium) layer 3 ranges from 10 to 200 nanometers.

[0011] Furthermore, the source electrode 4, drain electrode 5, and input electrode 6 are made of one of Ti, Au, Ni, and Pt, or two of them combined in any proportion.

[0012] In summary, this invention provides a self-storing voltage comparator. The invention comprises a transition metal chalcogenide and a metal phosphorus sulfide (selenide), utilizing the competitive mechanism between the ferroelectricity and ionic conductivity of the metal phosphorus sulfide (selenide) to achieve the identification and comparison of input signals, and can non-volatilely store the comparison results.

[0013] The above-described technical solution of the present invention has the following beneficial technical effects:

[0014] (1) The present invention utilizes a voltage comparator composed of transition metal chalcogenides and metal phosphorus sulfides (selenides). The device structure and preparation process are extremely simple, avoiding the complex circuit structure of traditional voltage comparators.

[0015] (2) The voltage comparator proposed in this invention has a device size that can reach the micrometer level, and has the characteristics of extremely small size and extremely low power consumption.

[0016] (3) The voltage comparator proposed in this invention can repeatedly define the range of low level and high level by electrically modulating the threshold voltage.

[0017] (4) The self-storage voltage comparator proposed in this invention has a non-volatile storage function and can store the level comparison results on its own. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the self-storage voltage comparator provided by the present invention.

[0019] Figure 2This is the equivalent circuit diagram of the self-storage voltage comparator provided by the present invention.

[0020] In the figure, 1 is the substrate, 2 is a transition metal chalcogenide, 3 is a metal phosphorus sulfide (selenide), 4 is the source electrode, 5 is the drain electrode, and 6 is the input electrode. Detailed Implementation

[0021] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to specific embodiments and the accompanying drawings. It should be understood that these descriptions are merely exemplary and not intended to limit the scope of the invention. Furthermore, descriptions of well-known structures and techniques are omitted in the following description to avoid unnecessarily obscuring the concept of the invention.

[0022] The self-stored voltage comparator disclosed in this invention, such as... Figure 1 As shown, the device includes a substrate 1, a transition metal chalcogenide 2, a metal phosphorus sulfide (selenide) 3, a source electrode 4, a drain electrode 5, and an input electrode 6. The transition metal chalcogenide 2 is located on the upper surface of the substrate 1, the metal phosphorus sulfide (selenide) 3 is located on the upper surface of the transition metal chalcogenide 2, the input electrode 6 is located on the upper surface of the metal phosphorus sulfide (selenide) 3, and the source electrode 4 and the drain electrode 5 are located at both ends of the transition metal chalcogenide 2 and are electrically connected to the transition metal chalcogenide 2.

[0023] The self-storage voltage comparator in this invention is composed of transition metal chalcogenides and metal phosphorus sulfides (selenides). It utilizes the competition mechanism between the ferroelectricity and ionic conductivity of metal phosphorus sulfides (selenides) to identify and compare input signals, and can non-volatilely store the comparison results.

[0024] In this design, substrate 1 can be any insulating dielectric material. Transition metal chalcogenide 2 is a two-dimensional transition metal chalcogenide film with a thickness of approximately 0.5-50 nm, such as tungsten selenide, molybdenum selenide, platinum selenide, molybdenum sulfide, tungsten sulfide, platinum sulfide, or tungsten telluride, molybdenum telluride, or platinum telluride. Metal phosphorus sulfide (selenide) 3 is a two-dimensional metal phosphorus sulfide (selenide) film with a thickness of approximately 10-200 nm, such as CuInP2S6, CuInP2Se6, CuBiP2Se6, or AgBiP2Se6, AgScP2Se6, AgInP2Se6, etc. The source electrode 4, drain electrode 5, and input electrode 6 are made of one of Ti, Au, Ni, and Pt, or a composite of any two of them.

[0025] Since transition metal chalcogenides are thin film materials with relatively stable physicochemical properties, the manufacturing process of transition metal chalcogenide phototransistors can be carried out using existing microelectronic processes without any special features, and will not be elaborated here.

[0026] Here are more specific examples:

[0027] Example 1

[0028] The device structure is as described above, where substrate 1 is silicon dioxide, transition metal chalcogenide 2 is molybdenum disulfide, metal phosphorus sulfide (selenide) 3 is CuInP2S6, and source electrode 4, drain electrode 5, and input electrode 6 are titanium electrodes. Due to the competition mechanism between the ferroelectricity and ionic conductivity of two-dimensional CuInP2S6, the device operates in N-type field-effect transistor mode under low-level input (Vil), exhibiting N-type conductivity; while under high-level input (Vih), it operates in memristor mode, exhibiting P-type conductivity. That is, the device can operate as follows... Figure 2 The circuit shown, through the output terminal ( I out The conductance mode of the input voltage is used to identify and compare the input voltage. V in The level of ).

[0029] Figure 2 Middle threshold voltage ( V th The switching voltage between the N-type and P-type conductance modes of this device is denoted by , which can be achieved by changing the voltage between the drain electrode 5 and the source electrode 4 (drain-source voltage). V ds This allows for precise modulation, meaning the values ​​of the low-level (Vil) and high-level (Vih) inputs can be redefined and repeated. V in < V th Low level, V in > V th It is a high level.

[0030] Furthermore, this device possesses non-volatile memory functionality. When operating in N-type field-effect transistor mode, it exhibits typical N-type transfer curve hysteresis. The voltage difference at the midpoint between the minimum and maximum current values ​​of this hysteresis curve is typically defined as the memory window (Δ). V MN When operating in memristor mode, it exhibits a P-type transfer curve hysteresis. We define the voltage difference at which the current direction reverses on this hysteresis curve as the memory window (Δ). V MP That is, when the input is low (Vil), the device can generate Δ. V MN When the input is high (Vih), the device can generate Δ. V MP Thus, to identify and store V inThe level state.

[0031] In summary, this invention provides a self-storing voltage comparator. This invention integrates a field-effect transistor and a memristor using transition metal chalcogenides and metal phosphorus sulfides (selenides). It utilizes the competitive mechanism between the ferroelectricity and ionic conductivity of metal phosphorus sulfides (selenides) to achieve the identification and comparison of the input voltage, and can non-volatilely store the comparison results.

Claims

1. A self-storing voltage comparator, characterized in that, The system includes a substrate 1, a transition metal chalcogenide 2, a metal phosphide (selenide) 3, a source electrode 4, a drain electrode 5, and an input electrode 6. The transition metal chalcogenide 2 is located on the upper surface of the substrate 1, the metal phosphide (selenide) 3 is located on the upper surface of the transition metal chalcogenide 2, the input electrode 6 is located on the upper surface of the metal phosphide (selenide) 3, and the source electrode 4 and drain electrode 5 are located at both ends of the transition metal chalcogenide 2 and are electrically connected to it. The self-stored voltage comparator operates in N-type field-effect transistor mode (N-type conductance) under low-level input (Vil) and memristor mode (P-type conductance) under high-level input (Vih). The switching voltage between the N-type and P-type conductance modes (…) V th This can be achieved by changing the voltage between the drain electrode 5 and the source electrode 4. V ds It can be precisely modulated, meaning the input voltage can be redefined and repeated. V in The level of ) where V in < V th Low level, V in > V th The voltage level is high; the self-storage voltage comparator has non-volatile storage function, exhibits N-type transfer curve hysteresis in N-type field-effect transistor mode, and has a memory window (Δ). V MN In memristor mode, it exhibits P-type transfer curve hysteresis and a memory window (Δ). V MP ).

2. The self-storage voltage comparator according to claim 1, characterized in that, The transition metal chalcogenide 2 is a material with the chemical formula MX2, wherein M is one of Mo, W, Pt, Hf, Ti, Bi, Ga, and Sn, and X is one of O, S, Se, and Te; the thickness of the transition metal chalcogenide layer 2 ranges from 0.5 to 50 nanometers.

3. A self-storage voltage comparator according to claim 1, characterized in that, The metal phosphorus sulfide (selenide) 3 is a material with the chemical formula MM'X2Y6, where M is one of Cu, Ag, Fe, Co, Ni, and Zn, M' is one of In, Sn, Sc, Bi, and Pb, X is P, and Y is one of S and Se; the thickness of the metal phosphorus sulfide (selenide) layer 3 ranges from 10 to 200 nanometers.

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