Method for evaluating and grading single particle resistance of COTS device based on risk control

Abstract

The invention discloses a risk control-based COTS device single particle resistance evaluation grading method, which comprises the following steps of: firstly, carrying out key grade division on a single machine, and then carrying out irradiation application assurance grade evaluation on a COTS device; when the COTS device is in the irradiation guarantee level I, a single-particle irradiation test is carried out according to related standards, and if test data meet single-machine single-particle selection conditions, a conclusion that the selected COTS device meets the irradiation guarantee level I is given; when the COTS device is in an irradiation guarantee grade II or grade III, firstly judging whether the selected COTS device has single event test data of a historical batch or not, and judging whether the data has technical state change or not compared with a target installation batch or not; and then judging whether the test data meets the single-machine single-particle selection condition or not, analyzing which specific indexes do not meet the condition, reinforcing the indexes which do not meet the condition, then carrying out the irradiation test again, and judging whether the test data meets the single-machine single-particle selection condition or not.

Description

Technical Field

[0001] This invention belongs to the field of ground simulation test evaluation technology of the radiation resistance of low-cost COTS devices for commercial aerospace to displacement damage effects, and specifically relates to a risk control-based method for evaluating and classifying the single-event resistance of COTS devices. Background Technology

[0002] With the advent of the marketization era in the aerospace industry and the vigorous promotion of industrial upgrading and transformation through "Internet + Aerospace" by the state in recent years, China has made progress in commercial satellites against the backdrop of a new round of global industrial revolution. Investors in commercial satellites place greater emphasis on satellite development costs. Aerospace-grade components generally prioritize stable performance, long-term reliable operation, and radiation resistance, resulting in slow upgrade cycles and difficulty in meeting users' demands for high performance. Continuing to use "high-priced, long-cycle" aerospace-grade components for low-cost and commercial satellite development is ill-suited to market demands. Commercial off-the-shelf (COTS) components offer advanced technology and superior performance, typically one to two generations ahead of aerospace-grade components, while also boasting faster development speeds, lower costs, smaller package sizes, shorter procurement cycles, and higher availability. Choosing COTS components can reduce development costs for commercial and microsatellites to a certain extent. However, COTS devices are designed and manufactured for civilian applications that are easy to repair and replace and can be used in a well-controlled environment, rather than for military applications, especially high-reliability applications in aerospace, which face harsh working environments. Directly applying COTS devices in space will inevitably encounter many problems and risks. Satellites will encounter various harsh space radiation environments during their on-orbit operation, including galactic cosmic rays, solar cosmic rays, and Earth's radiation belts. This space radiation environment seriously threatens the on-orbit reliable operation and lifespan of satellites and other spacecraft. All electronic components are affected by the total ionizing dose effect. Currently, in the radiation assessment of aerospace components, device-level assessment tests are conducted according to method 1019.3, ionizing radiation (total dose), in GJB548C-2021 Microelectronic Device Test Methods and Procedures. However, existing methods are costly and time-consuming. Further adaptation to the development of commercial aerospace is needed, while ensuring the reliability of satellite space radiation effects, to optimize the existing radiation assurance system and scientifically reduce test costs.

[0003] Zheng Xiaoyan's paper, "Research on Component Selection Based on Analytic Hierarchy Process (AHP)," from the Innovation Academy for Microsatellites, Chinese Academy of Sciences, proposes a component selection method for low-cost and commercial satellites based on AHP. It establishes a component selection process based on application level and provides a comprehensive evaluation method for AHP-based component selection schemes. However, this method lacks a method for ensuring total dose radiation protection of COTS components in the space environment. Ji Yueming's paper, "A Board-Level Total Dose Test Method for COTS Products," from Shenzhen Aerospace Dongfanghong Haite Satellite Co., Ltd., proposes a one-time total dose radiation test on the entire circuit board or the entire device. This method fails to consider mission profiles and application risk classification; for example, it does not consider the selection of COTS components for core and important single units, and board-level radiation assessment carries certain risks. The aforementioned patents and papers fail to provide effective implementation paths and methods, making them difficult to implement accurately in practice, lacking operability, and unable to effectively reduce the cost of total ionization dose effect assessment tests. Summary of the Invention

[0004] To address the aforementioned issues, this invention provides a risk-controlled method for assessing and classifying the single-event immunity of COTS devices. First, a comprehensive evaluation is conducted based on information such as mission nature, orbital altitude, and mission duration. Individual devices are then categorized into criticality levels. Different radiation protection methods are employed for COTS devices selected for different criticality levels, achieving agility, efficiency, and scientific cost reduction in testing. This establishes a cost-effective method for assessing and classifying the single-event immunity of COTS devices. The specific technical solution is as follows:

[0005] A risk-controlled method for evaluating and classifying the single-event immunity of COTS devices includes the following steps:

[0006] S1. Criticality classification of stand-alone machines

[0007] Based on the criticality of a single machine, the risks of single-machine applications are divided into Level I, Level II, and Level III;

[0008] S2. Assess the single-event radiation protection rating of COTS devices.

[0009] Based on the risk of single-unit application, the single-event radiation protection application guarantee level of COTS devices is evaluated into three levels, including radiation guarantee level I, radiation guarantee level II, and radiation guarantee level III.

[0010] When the risk assessment for a single-machine application is Level I, the corresponding single-event radiation protection guarantee level for COTS devices is Radiation Protection Level I.

[0011] When the risk assessment for a single-machine application is Level II, the corresponding single-event radiation protection guarantee level for COTS devices is Radiation Protection Level II.

[0012] When the risk assessment for a single-device application is Level III, the corresponding single-event radiation protection guarantee level for COTS devices is Radiation Protection Level III.

[0013] Specifically, when the single-event radiation protection guarantee level of the COTS device is radiation protection level I, the following steps are included:

[0014] A1. Irradiate COTS devices batch by batch.

[0015] Single-particle irradiation experiments were conducted in accordance with relevant standards;

[0016] A2. Determine whether the experimental data in S1 meets the single-machine single-particle selection criteria.

[0017] If the experimental data meet the single-machine single-particle selection criteria, conclude that the selected COTS device meets the irradiation guarantee level I.

[0018] If the test data does not meet the single-particle selection conditions for a single unit, the COTS device is reselected according to the single-unit functional requirements. After reselecting the COTS device, proceed to step A1.

[0019] Specifically, when the single-event radiation protection guarantee level of the COTS device is radiation protection level II or radiation protection level III, the following steps are included:

[0020] B1. Determine whether the selected COTS device has historical batch single-event test data, and also determine whether the technical status of the historical test batch of the selected COTS device is consistent with that of the target installed batch.

[0021] If the selected COTS device has historical batch single-event test data, and the historical batch is consistent with the target installed batch in terms of technical status, then proceed to step B2.

[0022] If the selected COTS device has single-event test data from historical batches, but the technical condition of the historical batches is inconsistent with that of the target installed batch, or if the selected COTS device does not have single-event test data from historical batches, then single-event irradiation tests should be carried out first in accordance with relevant standards, and then step B2 should be performed.

[0023] B2. Determine whether the experimental data in B1 meets the single-machine, single-particle selection criteria.

[0024] If the experimental data meet the single-machine single-particle selection criteria, then the conclusion is that the selected COTS device meets the irradiation protection level II.

[0025] If the experimental data does not meet the single-particle selection criteria, proceed to step B3;

[0026] B3. Analyze which specific indicators do not meet the single-machine single-event selection criteria.

[0027] The single-event immunity indicators of the selected COTS devices were analyzed, including single-event upset (SEU), single-event transient (SET), single-event lock-in (SEL), single-event burn-out (SEB), and single-event gate breakdown (SEGR).

[0028] B4. For those indicators that do not meet the requirements, reinforce them and then conduct the irradiation test again.

[0029] When the COTS device is of radiation protection class II

[0030] If the SEU does not meet the requirements, plate-level SEU reinforcement is carried out, and then proton irradiation test is conducted according to the single-unit single-particle index requirements.

[0031] If the SET does not meet the requirements, plate-level SET hardening is performed, and then proton irradiation test is carried out according to the single-particle index requirements of the single machine;

[0032] If the SEL does not meet the requirements, plate-level SEL reinforcement is performed, followed by heavy ion irradiation testing according to the single-particle index requirements.

[0033] If the SEB does not meet the requirements, plate-level SEB reinforcement is performed, followed by heavy ion irradiation testing according to the single-particle index requirements.

[0034] If SEGR does not meet the requirements, plate-level SEGR reinforcement is performed, followed by heavy ion irradiation testing according to the single-particle index requirements.

[0035] When the COTS device is of radiation protection class III

[0036] If the SEU does not meet the requirements, plate-level SEU reinforcement is performed, and then laser simulation wide LET heavy ion rapid test or fault software simulation is performed according to the single-machine single-particle index requirements.

[0037] If the SET does not meet the requirements, perform board-level SET hardening, and then conduct laser simulation wide LET heavy ion rapid test or fault software simulation according to the single-machine single-particle index requirements.

[0038] If the SEL does not meet the requirements, perform board-level SEL hardening, and then conduct laser simulation wide LET heavy ion rapid test or fault software simulation according to the single-machine single-particle index requirements.

[0039] If the SEB does not meet the requirements, plate-level SEB hardening is performed, and then laser simulation wide LET heavy ion rapid test or fault software simulation is performed according to the single-machine single-particle index requirements.

[0040] If SEGR does not meet the requirements, plate-level SEGR hardening is performed, followed by laser simulation wide LET heavy ion rapid test or fault software simulation according to the single-machine single-particle index requirements.

[0041] B5. Re-evaluate whether the experimental data in step B4 meets the single-machine single-particle selection criteria.

[0042] If the test data does not meet the single-unit single-particle selection conditions, then reselect the COTS device according to the single-unit functional requirements, and then jump to step A1;

[0043] If the experimental data meet the single-machine single-particle selection criteria, then the conclusion is that the selected COTS device meets the irradiation assurance level II or level III.

[0044] Compared with the prior art, the beneficial effects achieved by the present invention are as follows:

[0045] This invention provides a comprehensive evaluation of information such as mission nature, orbital altitude, and mission cycle, and classifies individual units into critical levels. Different single-event irradiation test methods are used for COTS devices selected for individual units of different critical levels, providing an effective implementation path and method. It can be accurately implemented in actual operation, is highly operable, and effectively reduces the cost of single-event effect evaluation tests. Attached Figure Description

[0046] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0047] Figure 1 This is a schematic diagram of the single-event irradiation guarantee classification method for COTS devices based on on-orbit application scenario classification according to the present invention.

[0048] SEU stands for Single Event Flip, SET stands for Single Event Transient, SEL stands for Single Event Lock, SEB stands for Single Event Burnout, and SEGR stands for Single Event Gate Penetration. Detailed Implementation

[0049] The present invention will now be described in detail with reference to specific embodiments. These embodiments are intended to help those skilled in the art to further understand the present invention, but do not limit the invention in any way. It should be noted that those skilled in the art can make several changes and modifications without departing from the concept of the present invention. These all fall within the scope of protection of the present invention.

[0050] like Figure 1As shown, a risk control-based method for evaluating and classifying the single-event immunity of COTS devices includes the following steps:

[0051] S1. Criticality classification of stand-alone machines

[0052] Based on the criticality of a single machine, the risks of single-machine applications are divided into Level I, Level II, and Level III;

[0053] S2. Assess the single-event radiation protection rating of COTS devices.

[0054] Based on the risk of single-unit application, the single-event radiation protection application guarantee level of COTS devices is evaluated into three levels, including radiation guarantee level I, radiation guarantee level II, and radiation guarantee level III.

[0055] When the risk assessment for a single-machine application is Level I, the corresponding single-event radiation protection guarantee level for COTS devices is Radiation Protection Level I.

[0056] When the risk assessment for a single-machine application is Level II, the corresponding single-event radiation protection guarantee level for COTS devices is Radiation Protection Level II.

[0057] When the risk assessment for a single-device application is Level III, the corresponding single-event radiation protection guarantee level for COTS devices is Radiation Protection Level III.

[0058] Specifically, when the single-event radiation protection guarantee level of the COTS device is radiation protection level I, the following steps are included:

[0059] A1. Irradiate COTS devices batch by batch.

[0060] Single-particle irradiation experiments were conducted in accordance with relevant standards;

[0061] A2. Determine whether the experimental data in S1 meets the single-machine single-particle selection criteria.

[0062] If the experimental data meet the single-machine single-particle selection criteria, conclude that the selected COTS device meets the irradiation guarantee level I.

[0063] If the test data does not meet the single-particle selection conditions for a single unit, the COTS device is reselected according to the single-unit functional requirements. After reselecting the COTS device, proceed to step A1.

[0064] Specifically, when the single-event radiation protection guarantee level of the COTS device is radiation protection level II or radiation protection level III, the following steps are included:

[0065] B1. Determine whether the selected COTS device has historical batch single-event test data, and also determine whether the technical status of the historical test batch of the selected COTS device is consistent with that of the target installed batch.

[0066] If the selected COTS device has historical batch single-event test data, and the historical batch is consistent with the target installed batch in terms of technical status, then proceed to step B2.

[0067] If the selected COTS device has single-event test data from historical batches, but the technical condition of the historical batches is inconsistent with that of the target installed batch, or if the selected COTS device does not have single-event test data from historical batches, then single-event irradiation tests should be carried out first in accordance with relevant standards, and then step B2 should be performed.

[0068] B2. Determine whether the experimental data in B1 meets the single-machine, single-particle selection criteria.

[0069] If the experimental data meet the single-machine single-particle selection criteria, then the conclusion is that the selected COTS device meets the irradiation protection level II.

[0070] If the experimental data does not meet the single-particle selection criteria, proceed to step B3;

[0071] B3. Analyze which specific indicators do not meet the single-machine single-event selection criteria.

[0072] The single-event immunity indicators of the selected COTS devices were analyzed, including single-event upset (SEU), single-event transient (SET), single-event lock-in (SEL), single-event burn-out (SEB), and single-event gate breakdown (SEGR).

[0073] B4. For those indicators that do not meet the requirements, reinforce them and then conduct the irradiation test again.

[0074] When the COTS device is of radiation protection class II

[0075] If the SEU does not meet the requirements, plate-level SEU reinforcement is carried out, and then proton irradiation test is conducted according to the single-unit single-particle index requirements.

[0076] If the SET does not meet the requirements, plate-level SET hardening is performed, and then proton irradiation test is carried out according to the single-particle index requirements of the single machine;

[0077] If the SEL does not meet the requirements, plate-level SEL reinforcement is performed, followed by heavy ion irradiation testing according to the single-particle index requirements.

[0078] If the SEB does not meet the requirements, plate-level SEB reinforcement is performed, followed by heavy ion irradiation testing according to the single-particle index requirements.

[0079] If SEGR does not meet the requirements, plate-level SEGR reinforcement is performed, followed by heavy ion irradiation testing according to the single-particle index requirements.

[0080] When the COTS device is of radiation protection class III

[0081] If the SEU does not meet the requirements, plate-level SEU reinforcement is performed, and then laser simulation wide LET heavy ion rapid test or fault software simulation is performed according to the single-machine single-particle index requirements.

[0082] If the SET does not meet the requirements, perform board-level SET hardening, and then conduct laser simulation wide LET heavy ion rapid test or fault software simulation according to the single-machine single-particle index requirements.

[0083] If the SEL does not meet the requirements, perform board-level SEL hardening, and then conduct laser simulation wide LET heavy ion rapid test or fault software simulation according to the single-machine single-particle index requirements.

[0084] If the SEB does not meet the requirements, plate-level SEB hardening is performed, and then laser simulation wide LET heavy ion rapid test or fault software simulation is performed according to the single-machine single-particle index requirements.

[0085] If SEGR does not meet the requirements, plate-level SEGR hardening is performed, followed by laser simulation wide LET heavy ion rapid test or fault software simulation according to the single-machine single-particle index requirements.

[0086] B5. Re-evaluate whether the experimental data in step B4 meets the single-machine single-particle selection criteria.

[0087] If the test data does not meet the single-unit single-particle selection conditions, then reselect the COTS device according to the single-unit functional requirements, and then jump to step A1;

[0088] If the experimental data meet the single-machine single-particle selection criteria, then the conclusion is that the selected COTS device meets the irradiation assurance level II or level III.

[0089] Example 1

[0090] The power system is a core and critical single-unit system of the satellite platform. A failure of the power system can directly lead to the failure of some or even all functions of the entire satellite. Its single-unit application risk assessment is Level I. The selected COTS device specification model is the power chip LM4630, which corresponds to the irradiation protection level I.

[0091] Device-level evaluation was conducted according to the QJ10005-2018 standard. The evaluation results show that the SET satisfies the linear energy transfer (LET) greater than 37 MeV·cm. 2 The test data meets the single-particle selection criteria for a single power supply unit, and therefore the COTS device meets the irradiation class I and can be used in a single power supply system unit.

[0092] Example 2

[0093] The onboard computer system is the core and critical platform unit of the satellite, mainly responsible for the overall satellite control. It adopts a master-backup design, and its single-unit application risk assessment is Level II. The selected COTS device is an Atmel MCU chip, model Atmega128, corresponding to irradiance protection level II, including the following steps:

[0094] B1. Through investigation, it was found that there are historical batches of irradiation experimental data for Atmage128 chips. The heavy ion test results are shown in Table 1. After comparison, it was found that the technical status of the selected Atmage128 chips has not changed from the historical irradiation test batches.

[0095] B2. The onboard computer system requires the MCU to have a single-event resilience rating of <5×10⁻⁶. -3 SER·dev / day, it was found that the experimental data did not meet the single-machine single-particle selection conditions;

[0096] B3. It was found that the UART of this COTS device does not meet the requirements for single-machine single-event SEU selection;

[0097] B4. Perform board-level radiation hardening on the UART of the Atmega128 chip, and then conduct proton irradiation test according to the single-unit single-particle index requirements.

[0098] B5. After radiation-resistant plate-level hardening, the UART proton irradiation test result of the Atmage128 chip is 5×10⁻⁶. - 3 SER·dev / day meets the irradiance guarantee level II and can be applied to spaceborne computer systems.

[0099] Table 1. Results of the Atmage 128 gravity experiment

[0100] Serial Number Device Structure Turnover rate (SER·dev / day) 1 kernel <![CDATA[2.5×10 -5 ]]> 2 SRAM <![CDATA[1.04×10 -4 ]]> 3 UART <![CDATA[8.44×10 -3 ]]> 4 Watchdog <![CDATA[6.12×10 -4 ]]> 5 timer <![CDATA[1.06×10 -4 ]]> 6 FLASH <![CDATA[2.17×10 -5 ]]>

[0101] Example 3

[0102] The remote sensing payload is the core mission unit of the remote sensing satellite. When an anomaly is detected, the usual strategy is to enter a safe mode. First, the source of the anomaly is detected, and then the best recovery strategy is selected to eliminate the anomaly based on the mission stage and the satellite's current situation. Its unit application risk assessment is Level III. The selected COTS device is the AMS CMV4000 CMOS image sensor, corresponding to Irradiance assurance level III, including the following steps:

[0103] B1. Through investigation, it was found that the COTS device had not completed single-event testing;

[0104] B2. According to QJ10005-2018, a single-event irradiation test was conducted on the COTS device, and the heavy ion test result showed that the LET of the SEL was ≥37 MeV·cm. 2 / mg, SET LET < 37MeV·cm 2 / mg;

[0105] B3. The remote sensing payload system requires the image sensor to have a single-event immunity index of LET ≥ 37 MeV·cm⁻¹ for SEL. 2 / mg, SET LET≥37MeV·cm 2 / mg, after comparative analysis, the SET of this CMV4000 does not meet the single-particle selection requirements of a single unit;

[0106] B4. Perform circuit-level SET hardening on CMV4000 and conduct laser-simulated wide LET heavy ion rapid test;

[0107] B5. Rapid laser-simulated wide LET heavy ion test at the plate level showed that the plate-level SET hardening met the requirement of LET ≥ 37 MeV·cm. 2 The CMV4000 CMOS image sensor meets the radiation protection level III requirement and can be used in remote sensing payload systems.

[0108] It should be noted that the order of the above embodiments of the present invention is merely for descriptive purposes and does not represent the superiority or inferiority of the embodiments. Furthermore, specific embodiments have been described above. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps described in the claims can be performed in a different order than that shown in the embodiments and still achieve the desired result. Additionally, the processes depicted in the drawings do not necessarily require a specific or sequential order to achieve the desired result. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0109] The various embodiments in this specification are described in a progressive manner. Similar or identical parts between embodiments can be referred to interchangeably. Each embodiment focuses on its differences from other embodiments. The above descriptions are merely preferred embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention. Contents not described in detail in this specification are common knowledge to those skilled in the art.

Claims

1. A method for risk control based COTS device single event effects rating, comprising: Comprising the following steps: ​ S1, key level division of single machine According to the key degree of single machine, the single machine application risk is divided into level I, level II and level III; S2, level evaluation of COTS device single particle anti-radiation application assurance level According to the three levels of single machine application risk division, the level evaluation of COTS device single particle anti-radiation application assurance level is carried out, including radiation assurance level I, radiation assurance level II and radiation assurance level III; When the single machine application risk evaluation is level I, the corresponding COTS device single particle anti-radiation application assurance level is radiation assurance level I; When the single machine application risk evaluation is level II, the corresponding COTS device single particle anti-radiation application assurance level is radiation assurance level II; When the single machine application risk evaluation is level III, the corresponding COTS device single particle anti-radiation application assurance level is radiation assurance level III.

2. The method of claim 1, wherein the method further comprises: When the COTS device single particle anti-radiation application assurance level is radiation assurance level I, comprising the following steps: A1, irradiation of COTS device batch by batch According to the relevant standards, single particle irradiation test is carried out; A2, judging whether the test data in S1 meet the single machine single particle selection conditions If the test data meet the single machine single particle selection conditions, give the conclusion that the selected COTS device meets the radiation assurance level I; If the test data do not meet the single machine single particle selection conditions, reselect COTS device according to the function requirements of single machine, and jump to step A1 after reselecting COTS device.

3. The method of claim 1, wherein the method further comprises: determining a risk level of the COTS device based on the SEU rate and the LET; and determining the SEU rate of the COTS device based on the risk level. When the COTS device single particle anti-radiation application assurance level is radiation assurance level II or radiation assurance level III, comprising the following steps: B1, judging whether the selected COTS device has historical batch single particle test data, and judging whether the technical state of the historical test batch of the selected COTS device is consistent with the target machine batch; B2, judging whether the test data in B1 meet the single machine single particle selection conditions; B3, analyzing which indicators do not meet the single machine single particle selection indicators; B4, reinforcing the indicators that do not meet the requirements, and then carrying out irradiation test again; B5, judging whether the test data in step B4 meet the single machine single particle selection conditions.

4. The method of claim 3, wherein the method further comprises: In step B1, if the selected COTS device has historical batch single particle test data, and the technical state of the historical batch is consistent with the target machine batch, step B2 is carried out; If the selected COTS device has historical batch single particle test data, but the technical state of the historical batch is not consistent with the target machine batch, or the selected COTS device has no historical batch single particle test data, first carry out single particle irradiation test according to the relevant standards, and then carry out step B2.

5. The method of claim 3, wherein the method further comprises: In step B2, if the test data meet the single machine single particle selection conditions, give the conclusion that the selected COTS device meets the radiation assurance level II; If the test data do not meet the single machine single particle selection conditions, step B3 is carried out.

6. The method of claim 3, wherein the method further comprises: In step B3, the indicators include single particle flip, single particle transient, single particle lock, single particle burnout and single particle gate penetration.

7. The method of claim 3, wherein the method further comprises: determining a risk level of the COTS device based on the SEU rate and the LET; and determining the SEU rate of the COTS device based on the risk level. In step B4, when the COTS device is radiation assurance level II, If the single event upset does not meet the requirements, the board-level single event upset hardening is performed, and then the proton irradiation test is performed according to the single machine single event index requirements; If the single event transient does not meet the requirements, the board-level single event transient hardening is performed, and then the proton irradiation test is performed according to the single machine single event index requirements; If the single event latchup does not meet the requirements, the board-level single event latchup hardening is performed, and then the heavy ion irradiation test is performed according to the single machine single event index requirements; If the single event burnout does not meet the requirements, the board-level single event burnout hardening is performed, and then the heavy ion irradiation test is performed according to the single machine single event index requirements; If the single event gate dielectric breakdown does not meet the requirements, the board-level single event gate dielectric breakdown hardening is performed, and then the heavy ion irradiation test is performed according to the single machine single event index requirements.

8. The method of claim 3, wherein the method further comprises: determining a risk level of the COTS device based on the SEU rate and the LET; and determining the SEU rate of the COTS device based on the risk level. In step B4, when the COTS device is of the irradiation assurance level III, If the single event upset does not meet the requirements, the board-level single event upset hardening is performed, and then the laser simulation of wide LET heavy ion fast test or fault software simulation is performed according to the single machine single event index requirements; If the single event transient does not meet the requirements, the board-level single event transient hardening is performed, and then the laser simulation of wide LET heavy ion fast test or fault software simulation is performed according to the single machine single event index requirements; If the single event latchup does not meet the requirements, the board-level single event latchup hardening is performed, and then the laser simulation of wide LET heavy ion fast test or fault software simulation is performed according to the single machine single event index requirements; If the single event burnout does not meet the requirements, the board-level single event burnout hardening is performed, and then the laser simulation of wide LET heavy ion fast test or fault software simulation is performed according to the single machine single event index requirements; If the single event gate dielectric breakdown does not meet the requirements, the board-level single event gate dielectric breakdown hardening is performed, and then the laser simulation of wide LET heavy ion fast test or fault software simulation is performed according to the single machine single event index requirements.

9. The method of claim 3, wherein the method further comprises: determining a risk level of the COTS device based on the SEU rate and the LET threshold of the COTS device; and determining the SEU rate of the COTS device based on the risk level of the COTS device. In step B5, if the test data does not meet the single machine single event selection conditions, the COTS device is reselected according to the single machine function requirements, and then the step A1 is jumped to; If the test data meets the single machine single event selection conditions, a conclusion that the selected COTS device meets the irradiation assurance level II or level III is given.

Images