Laser lift-off apparatus and substrate lift-off method using same

Abstract

A laser lift-off apparatus and a substrate lift-off method using the same are provided. The laser lift-off device is configured to convert a first light beam into a second light beam having a width in a first direction and in a second direction different from the first direction, the laser lift-off device comprising: a laser beam generator configured to generate the first light beam; a homogenizer configured to homogenize the first light beam; and a beam cutter including a first beam cutter and a second beam cutter defining at least two openings having different respective lengths in the first direction and configured to generate a second beam by transmitting and blocking respective portions of the first beam.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2024-0065038, filed on May 20, 2024, with the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference. Technical Field

[0003] The embodiments of this disclosure described herein relate to a laser lift-off apparatus and a substrate lift-off method using a laser lift-off apparatus. Background Technology

[0004] Display devices can be manufactured as flexible devices using highly flexible substrates.

[0005] However, because flexible substrates are highly flexible, they can be adapted to be supported during the manufacturing process of display devices. Therefore, after forming a flexible substrate on a carrier substrate made of a material such as glass, the process for manufacturing a flat panel display device is performed, and then the carrier substrate is removed.

[0006] The carrier substrate can be removed by one or more suitable methods. Among these methods, laser ablation can be considered.

[0007] The information disclosed in this background section is intended only to enhance the understanding of the background technology of this disclosure, and therefore may contain information that does not constitute prior art. Summary of the Invention

[0008] One or more embodiments of this disclosure relate to a laser stripping apparatus having improved reliability of the laser stripping process and a substrate stripping method using the laser stripping apparatus.

[0009] However, the aspects of this disclosure are not limited to those set forth herein. These and other aspects of the disclosure will become more apparent to those skilled in the art upon reference to the following detailed description of the disclosure.

[0010] According to one or more embodiments of the present disclosure, a laser stripping apparatus is configured to convert a first beam into a second beam having a width in a first direction and in a second direction different from the first direction. The laser stripping apparatus includes: a laser beam generator configured to generate the first beam; a homogenizer configured to homogenize the first beam; and a beam cutter including a first beam cutter and a second beam cutter, the first beam cutter and the second beam cutter defining at least two openings having different respective lengths in the first direction, and configured to generate the second beam by transmitting and blocking respective portions of the first beam.

[0011] A first beam cutter may define a first opening and a second opening extending from the first opening in a second direction, wherein a second beam cutter defines a third opening and a fourth opening extending from the third opening in a second direction.

[0012] The width of the first opening in the first direction can be greater than the width of the second opening in the first direction, wherein the width of the third opening in the first direction is greater than the width of the fourth opening in the first direction.

[0013] The first beam cutter may include a first end, wherein the second beam cutter includes a second end facing the first end, wherein a second opening branches the first end, and wherein a third opening branches the second end.

[0014] The energy distribution of the second beam may include a first region and a second region with higher energy than the first region.

[0015] The first region can correspond to the first beam passing through the second and fourth openings.

[0016] The second region may include a first sub-region and a second sub-region opposite to the first sub-region, and the first region is between the first sub-region and the second sub-region, wherein the first sub-region corresponds to a first beam passing through a first opening, and wherein the second sub-region corresponds to a first beam passing through a third opening.

[0017] The second region may include: a margin region on one side of the first region; a tilt region on one side of the margin region; and a high-energy region on one side of the tilt region.

[0018] The width of the margin area can be approximately 4 mm or greater, while the width of the sloping area is approximately 12 mm or less.

[0019] The shapes of the first beam cutter and the second beam cutter can be symmetrical with respect to the axis extending in the first direction.

[0020] The first beam cutter and the second beam cutter can be alternately arranged in a third direction different from the first direction and the second direction.

[0021] The first beam cutter and the second beam cutter may also include a driver configured to provide driving force in at least one of the first and second directions.

[0022] The laser stripping device may also include a telescope lens, which is located between the laser beam generator and the homogenizer and is configured to amplify the first beam or to transmit the first beam at the same magnification.

[0023] The laser ablation apparatus may also include a short-axis slit between the homogenizer and the beam cutter and defining an opening having a short width in a first direction and a long width in a second direction.

[0024] The laser stripping device may also include a short-axis Fourier lens, which is located between the homogenizer and the short-axis slit and configured to focus a first beam transmitted through the telescope lens onto the short-axis slit along a first direction.

[0025] The laser stripping device may also include a long-axis Fourier lens, which is located between the short-axis slit and the beam cutter and is configured to focus a first beam transmitted through a telescope lens onto an image plane in which a second beam is incident.

[0026] The laser stripping device may also include a projection lens located between the short-axis slit and the beam cutter and configured to adjust the width of the first beam passing through the short-axis slit in at least either a first direction or a second direction.

[0027] According to one or more embodiments, a laser stripping apparatus is configured to convert a first beam into a second beam having a width in a first direction and a width in a second direction different from the first direction. The laser stripping apparatus includes: a laser beam generator configured to generate the first beam; a homogenizer configured to homogenize the first beam; and a beam cutter including a first beam cutter defining a first opening extending in the second direction and a second beam cutter defining a second opening extending in the second direction, and configured to generate the second beam by transmitting and blocking corresponding portions of the first beam.

[0028] The energy distribution of the second beam may include a first region corresponding to the first beam passing through the space in a second direction between the first beam cutter and the second beam cutter, and a second region having higher energy than the first region.

[0029] The second region may include: a first sub-region corresponding to the first beam passing through the first opening and the first beam passing through the space; and a second sub-region opposite to the first sub-region and the first region being between the first sub-region and the second sub-region, and the second sub-region corresponding to the first beam passing through the second opening and the first beam passing through the space.

[0030] According to one or more embodiments of the present disclosure, a substrate stripping method is provided for stripping a carrier substrate from a first substrate of a display device. The display device includes a carrier substrate, a first substrate above the carrier substrate, a barrier layer above the first substrate and larger than the first substrate in a plan view, and a second substrate above the barrier layer. The display device has a first region in which pixels are arranged and a second region outside the first region in which the barrier layer does not overlap with the first substrate. The substrate stripping method includes: irradiating the first region and the second region with a second beam generated from a laser stripping device by separating a first beam cutter and a second beam cutter, the laser stripping device including a laser beam generator configured to generate the first beam, a homogenizer configured to homogenize the first beam, and a first beam cutter and a second beam cutter generating the second beam by transmitting and blocking corresponding portions of the first beam; and irradiating the second beam with the second beam by moving the first beam cutter and the second beam cutter closer to each other, wherein the energy intensity of the second beam irradiating the first region is less than the energy intensity of the second beam irradiating the second region.

[0031] The method further includes: allowing the first beam cutter to pass through the space between the first beam cutter and the second beam cutter when the second beam is irradiated toward the first region and the second region by separating the first beam cutter and the second beam cutter; and allowing the first beam to pass through the first opening and the second opening when the second beam is irradiated toward the second region by moving the first beam cutter and the second beam cutter toward each other.

[0032] The display device may also have a third region between the first region and the second region, wherein the energy intensity of the second light beam irradiating the third region is greater than or equal to the energy intensity of the second light beam irradiating the first region, and less than or equal to the energy intensity of the second light beam irradiating the second region.

[0033] The reliability of the laser lift-off process can be improved by using a laser lift-off apparatus and a substrate lift-off method using a laser lift-off apparatus according to one or more embodiments of the present disclosure.

[0034] However, the aspects of this disclosure are not limited to those set forth herein. These and other aspects of the disclosure will become more apparent to those skilled in the art upon reference to the claims. Attached Figure Description

[0035] These and / or other aspects will become apparent and more readily understood from the following description of embodiments taken in conjunction with the accompanying drawings, in which:

[0036] Figure 1It is a cross-sectional view of a display device manufactured according to one or more embodiments;

[0037] Figure 2 It is a plan view of the carrier substrate and the panel substrate;

[0038] Figure 3 This is a cross-sectional view of the carrier substrate and the panel substrate;

[0039] Figure 4 This is a schematic diagram illustrating the energy distribution of the final laser beam applied to the carrier substrate and the panel substrate during a laser lift-off process using a laser lift-off apparatus according to one or more embodiments.

[0040] Figure 5 It is a schematic block diagram of a laser ablation apparatus according to one or more embodiments;

[0041] Figure 6 This is a schematic perspective view of a laser ablation apparatus according to one or more embodiments;

[0042] Figure 7 It is a plan view of a beam cutter according to one or more embodiments;

[0043] Figure 8 and Figure 9 This is a cross-sectional view of a beam cutter according to one or more embodiments;

[0044] Figure 10 yes Figure 6 A magnified view of the XA region;

[0045] Figure 11 yes Figure 6 A magnified view of the XB region;

[0046] Figure 12 yes Figure 11 A magnified view of the XD region;

[0047] Figure 13 yes Figure 6 A magnified view of the XC region;

[0048] Figure 14 This is a schematic cross-sectional view illustrating a process of peeling a carrier substrate from a panel substrate using a laser lifter according to one or more embodiments.

[0049] Figure 15 This is a plan view illustrating the process by which a beam cutter, according to one or more embodiments, adjusts the energy distribution of the final laser beam by moving along its long axis.

[0050] Figure 16 and Figure 17This is a cross-sectional view illustrating the process by which a beam cutter, according to one or more embodiments, adjusts the energy distribution of the final laser beam by moving along its long axis.

[0051] Figure 18 This is a schematic diagram showing the energy distribution of the final laser beam in a laser stripping apparatus according to one or more embodiments;

[0052] Figure 19 This is a plan view illustrating the process by which a beam cutter according to one or more embodiments adjusts the energy distribution of the final laser beam by moving in the short axis direction;

[0053] Figure 20 This is a plan view illustrating the process by which a beam cutter according to one or more embodiments adjusts the energy distribution of the final laser beam by moving in the long axis direction and the short axis direction;

[0054] Figure 21 This is a plan view of the beam cutter according to the first comparative embodiment;

[0055] Figure 22 This is a cross-sectional view of the beam cutter according to the first comparative embodiment;

[0056] Figure 23 This is a schematic diagram showing the energy distribution of the final laser beam in the laser stripping apparatus according to the first comparative embodiment;

[0057] Figure 24 The energy distribution of the final laser beam in the laser stripping apparatus according to one or more embodiments corresponds to... Figure 18 A magnified view of a portion of the XE region;

[0058] Figure 25 The energy distribution of the final laser beam in the laser stripping apparatus according to the second comparative embodiment corresponds to... Figure 18 A magnified view of a portion of the XE region;

[0059] Figure 26 This is a plan view illustrating a first laser irradiation operation using a beam cutter according to one or more embodiments;

[0060] Figure 27 It shows the use Figure 26 A cross-sectional view of the first laser irradiation operation of the beam cutter;

[0061] Figure 28 It shows the use Figure 26 A plan view of the second laser irradiation operation of the beam cutter; and

[0062] Figure 29 It shows the use Figure 26A cross-sectional view of the second laser irradiation operation of the beam cutter. Detailed Implementation

[0063] This disclosure will now be described in more detail below with reference to the accompanying drawings, in which exemplary embodiments of the disclosure are illustrated. However, this disclosure may be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of this disclosure to those skilled in the art.

[0064] It will also be understood that when a layer is referred to as being "on" another layer or substrate, it can be directly on the other layer or substrate, or an intervening layer may be present. Throughout the specification, the same reference numerals denote the same components.

[0065] In the following description, embodiments of the present disclosure will be described in more detail with reference to the accompanying drawings.

[0066] In the following description, embodiments will be described in more detail with reference to the accompanying drawings.

[0067] Figure 1 It is a cross-sectional view of a display device DD manufactured according to one or more embodiments.

[0068] refer to Figure 1 A display device DD manufactured according to one or more embodiments may include a carrier substrate CST, a display panel DP, and an upper protective layer UPL.

[0069] The carrier substrate CST may include a rigid material to serve as a support for the display panel DP during the manufacturing process of the display device DD. During the manufacturing process of the display device DD, the carrier substrate CST may be set on a stage STG (see [link to STG]). Figure 5 )superior.

[0070] The carrier substrate CST may include a transparent material to transmit a laser beam during a lift-off process using a laser. For example, the carrier substrate CST may be made of glass having SiO2 as its main component. As another example, the carrier substrate CST may include at least one of borosilicate glass, fused silica glass, and quartz glass.

[0071] When the display device DD is completed, the carrier substrate CST can be peeled off from the panel substrate PST and removed from the display device DD.

[0072] The display panel DP may include a panel substrate PST, a display element layer DEL, and a packaging layer TFE.

[0073] The panel substrate PST can be on the carrier substrate CST. In one or more embodiments, the panel substrate PST can be, but is not limited to, a flexible substrate.

[0074] In one or more embodiments, the panel substrate PST may comprise a plastic material. For example, the panel substrate PST may be made of polyamide or polyimide, which has excellent heat resistance to withstand high-temperature processes (such as low-temperature polycrystalline silicon (LTPS) manufacturing processes) and is flexible when processed into film form. The panel substrate PST can be formed by spin-coating a polyamide or polyimide solution onto a carrier substrate CST and then curing the solution, or by attaching or laminating a film-type polyamide or polyimide substrate to the carrier substrate CST using an adhesive material.

[0075] The display element layer (DEL) can be located on the panel substrate (PST). The display element layer (DEL) may include light-emitting elements and circuit elements for driving the light-emitting elements.

[0076] The encapsulation layer TFE can be on the display element layer DEL. The encapsulation layer TFE can seal the display element layer DEL. The encapsulation layer TFE can include (e.g., can be) a thin film or multiple layers. For example, the encapsulation layer TFE can be a thin film encapsulation layer. The encapsulation layer TFE can have components consisting of inorganic materials (such as silicon oxide (SiO2)). x ) or silicon nitride (SiN) x The structure consists of alternating layers made of epoxy resin and layers made of organic materials such as epoxy resin or polyimide. However, this disclosure is not limited thereto, and the encapsulation layer TFE may also include layers made of low-melting-point glass.

[0077] The upper protective layer (UPL) can be placed on the encapsulation layer (TFE). The UPL reduces or prevents damage to the TFE when the panel substrate (PST) is peeled from the carrier substrate (CST). The UPL can be removed after the panel substrate (PST) has been peeled from the carrier substrate (CST).

[0078] Figure 2 This is a plan view of the carrier substrate (CST) and the panel substrate (PST).

[0079] Apart from Figure 1 In addition, refer to Figure 2 The display device DD may include a valid area AA. The valid area AA may be an area containing multiple pixels. The valid area AA may be an area configured to display an image. The valid area AA may be referred to as the display area.

[0080] In one or more embodiments, the periphery of the effective region AA may be located inside the periphery of the panel substrate PST. In a plan view, the size of the panel substrate PST may be larger than the size of the effective region AA. The area of ​​the panel substrate PST other than the effective region AA may be a non-effective region or a non-display region. That is, the area of ​​the panel substrate PST surrounding the effective region AA (e.g., in a plan view) may be a non-effective region or a non-display region.

[0081] In one or more embodiments, the periphery of the panel substrate PST may be located inside the periphery of the carrier substrate CST. In a plan view, the size of the carrier substrate CST may be larger than the size of the panel substrate PST. That is, the length of one side of the carrier substrate CST may be greater than the length of the corresponding side of the panel substrate PST.

[0082] The carrier substrate CST may include a boundary region BR. The boundary region BR may be the boundary between the overlapping panel substrate PST and the carrier substrate CST at the beginning of their non-overlapping regions. For example, the panel substrate PST may be inside the boundary region BR or may not be outside the boundary region BR.

[0083] Figure 3 This is a cross-sectional view of the carrier substrate (CST) and the panel substrate (PST).

[0084] Apart from Figure 1 and Figure 2 In addition, refer to Figure 3 The panel substrate PST may include a substrate SUB and a barrier layer BL. The substrate SUB may include a first substrate SUB1 and a second substrate SUB2. The barrier layer BL may include a first barrier layer BL1 and a second barrier layer BL2.

[0085] Although the second substrate SUB2 is shown on the second barrier layer BL2 in the accompanying drawings, this disclosure is not limited thereto. The stacking order of the second barrier layer BL2 and the second substrate SUB2 can be changed. For example, the second barrier layer BL2 can also be on the second substrate SUB2. As an example, the case where the second substrate SUB2 is on the second barrier layer BL2 will be described in more detail below.

[0086] The first substrate SUB1 may be on the carrier substrate CST. The first substrate SUB1 may have a smaller area than the carrier substrate CST. Therefore, the first substrate SUB1 may not overlap with at least a portion of the carrier substrate CST.

[0087] In one or more embodiments, the first substrate SUB1 may include an organic material. For example, the first substrate SUB1 may include one or more of polyamide resin and polyimide resin, but this disclosure is not limited thereto.

[0088] A first barrier layer BL1 may be on a first substrate SUB1. The first barrier layer BL1 may have an area larger than the first substrate SUB1. Therefore, the first barrier layer BL1 may cover the entire first substrate SUB1. The first barrier layer BL1 may contact at least a portion of the carrier substrate CST.

[0089] In one or more embodiments, the first barrier layer BL1 may include an inorganic material. For example, the first barrier layer BL1 may include, but is not limited to, silicon nitride (SiN). x ), aluminum nitride (AlN) x Titanium nitride (TiN) x ), silicon dioxide (SiO) x ), aluminum oxide (AlO) x Titanium oxide (TiO) x ), silicon dioxide (SiO) x C y ) and silicon oxynitride (SiO) x N y One or more of the following.

[0090] In one or more embodiments, the first barrier layer BL1 may comprise a single layer or multiple layers (e.g., composed of a single layer or multiple layers). For example, when the first barrier layer BL1 comprises a single layer (e.g., composed of a single layer), the first barrier layer BL1 may be a single layer comprising one or more of the materials described above. For another example, when the first barrier layer BL1 comprises multiple layers (e.g., composed of multiple layers), the first barrier layer BL1 may comprise a first layer and a second layer on top of the first layer, the first layer comprising one or more of the materials described above. Here, the second layer may comprise amorphous silicon (a-Si).

[0091] The second barrier layer BL2 can be placed on top of the first barrier layer BL1. The second barrier layer BL2 can have a larger area than the first barrier layer BL1. Therefore, the second barrier layer BL2 can cover the entire first barrier layer BL1.

[0092] In one or more embodiments, the second barrier layer BL2 may include an inorganic material. The second barrier layer BL2 may include one or more of the materials described above with reference to the first barrier layer BL1, but this disclosure is not limited thereto.

[0093] The second substrate SUB2 may be on the second barrier layer BL2. The second substrate SUB2 may have a larger area than the first substrate SUB1. The second substrate SUB2 may have end portions that do not overlap with the first substrate SUB1. That is, the horizontal length of the second substrate SUB2 may be greater than the horizontal length of the first substrate SUB1, such that the end of the second substrate SUB2 does not overlap with the first substrate SUB1 in a planar view. When the second substrate SUB2 has a larger area than the first substrate SUB1, the second substrate SUB2 may include a protruding region A that further protrudes from the first substrate SUB1.

[0094] In one or more embodiments, the second substrate SUB2 may include an organic material. The second substrate SUB2 may include one or more of the materials described above with reference to the first substrate SUB1, but this disclosure is not limited thereto.

[0095] The protruding region A may be located outside the effective region AA. The protruding region A may (e.g., in a plan view) surround the effective region AA. That is, in a plan view, the protruding region A does not overlap with the effective region AA. The protruding region A may overlap with a portion of each of the first barrier layer BL1 and the second barrier layer BL2 located between the carrier substrate CST and the second substrate SUB2.

[0096] The boundary region BR can be located outside the salient region A. That is, in the plan view, the boundary region BR does not overlap with the salient region A. The boundary region BR can surround the salient region A.

[0097] The second substrate SUB2 may further include an intermediate region B. The intermediate region B may be the region outside the effective region AA (e.g., excluding the effective region AA) at the location where the first substrate SUB1 directly contacts the carrier substrate CST. In the intermediate region B, the first barrier layer BL1 and the second barrier layer BL2 may be located on the first substrate SUB1. The intermediate region B may be located between the effective region AA and the protruding region A. The intermediate region B may be located outside the effective region AA. That is, in a plan view, the intermediate region B does not overlap with the effective region AA. The intermediate region B may surround the effective region AA. The intermediate region B may be located inside the protruding region A and may be surrounded by the protruding region A.

[0098] Figure 4 This is a schematic diagram illustrating the energy distribution of the final laser beam applied to the carrier substrate CST and the panel substrate PST during a laser lift-off process using a laser lift-off apparatus according to one or more embodiments.

[0099] Apart from Figures 1 to 3 In addition, refer to Figure 4In order to peel the carrier substrate CST from the panel substrate PST, a laser lift-off device 1 (see Figure 5 Appropriate energy can be appropriately applied to the area where the panel substrate PST and the carrier substrate CST are in contact with each other. For example, if the laser lift-off device 1 (see...) Figure 5 If the appropriate energy cannot be applied, the carrier substrate CST may not be able to be properly peeled off from the first substrate SUB1, resulting in damage to the components of the display device DD.

[0100] Because the pixel is located in the effective region AA, the carrier substrate CST corresponding to the effective region AA can be appropriately stripped with relatively low energy compared to the carrier substrate CST corresponding to regions other than the effective region AA, so as to reduce or prevent damage to the pixel.

[0101] For example, if laser ablation device 1 (see...) Figure 5 If high energy is applied to the effective area AA, the first substrate SUB1 may be damaged due to the high energy of the laser beam. At this time, the adhesion of the components on the first substrate SUB1 may be weakened, and the encapsulation layer TFE may be separated.

[0102] Therefore, a relatively low-energy laser beam from a laser beam incident on the panel substrate PST can be used to properly peel off the carrier substrate CST corresponding to the effective region AA. According to one or more embodiments of the laser peeling apparatus 1, which will be described in more detail later (see...), Figure 5 Appropriately low energy can be applied to the effective area AA. Therefore, the risk of TFE delamination of the encapsulation layer can be reduced.

[0103] In one or more embodiments, since the protruding region A is the region between the first barrier layer BL1 and the second barrier layer BL2 between the carrier substrate CST and the second substrate SUB2, the energy density of the laser beam reaching the second substrate SUB2 can be reduced by the first barrier layer BL1 and the second barrier layer BL2.

[0104] Therefore, compared to the carrier substrate CST corresponding to the effective region AA, the carrier substrate CST corresponding to the protruding region A can be appropriately peeled off with relatively higher energy. If high energy is not applied to the protruding region A, the carrier substrate CST corresponding to the protruding region A of the second substrate SUB2 may not be peeled off. In this case, if a peeling blade is used to complete the peeling, the first substrate SUB1 may be damaged when the peeling blade passes between the carrier substrate CST and the first substrate SUB1.

[0105] The laser ablation apparatus 1, according to one or more embodiments described in more detail later, can apply appropriately high energy to the protruding region A. Therefore, the reliability of the laser ablation process can be improved.

[0106] For example, such as Figure 4 As shown, the carrier substrate CST corresponding to the effective region AA can be stripped using a laser beam having a first energy E1. In the effective region AA, the laser beam can have a substantially uniform (e.g., substantially uniform) first energy E1. The laser beam can have a low-energy region W0 in an energy density map plotted by region; the low-energy region W0 is a constant segment with a first energy E1. The low-energy region W0 can be a flat-top region FTA, which will be described in more detail later (see [link to relevant documentation]). Figure 13 ).

[0107] The carrier substrate CST corresponding to the protruding region A and the boundary region BR can be stripped by a laser beam having a second energy E2. In the protruding region A, the laser beam can have a substantially uniform (e.g., substantially uniform) second energy E2. The laser beam can have a first region W1 in an energy density map plotted by region, the first region W1 being a constant segment with the second energy E2. The first region W1 can be an energy-enhancing region EHA, which will be described in more detail later (see [link to relevant documentation]). Figure 13 The first energy E1 can be lower than the second energy E2. The first energy E1 and the second energy E2 can have an energy difference (e.g., a predetermined energy difference) d1.

[0108] The carrier substrate CST corresponding to the intermediate region B can be peeled off using a laser beam having a first energy E1 to a second energy E2. A portion of the laser beam may have a substantially uniform (e.g., substantially uniform) first energy E1 in the intermediate region B, and another portion of the laser beam may have a first energy E1 to a second energy E2. For example, in an energy density map plotted by region, the laser beam may have a second region W2 and a third region W3, where the second region W2 is the segment from the first energy E1 to the second energy E2, and the third region W3 is a constant segment of the first energy E1.

[0109] The second region W2 can be a sloping region. The second region W2 can be an intermediate segment of the energy change from the low-energy region W0 to the first region W1. The width of the second region W2 can be determined according to the laser ablation device 1, which will be described in more detail later (see [reference]). Figure 5 The configuration of the optical system varies.

[0110] The third region W3 can be a safety margin region. The third region W3 can be used to reduce or prevent damage caused by the laser ablation device 1 (see...). Figure 5 The edge region of the effective area AA may be irradiated by a laser beam with a higher energy than the first energy E1 due to the alignment error of the optical system configuration.

[0111] A laser ablation apparatus 1 according to one or more embodiments, which will be described in more detail later (see [reference]). Figure 5 The appropriate energy can be applied to each area as described above. For example, laser ablation device 1 (see...) Figure 5 The beam can irradiate the low-energy region W0 to protect the effective region AA from the influence of the laser beam, can irradiate the first region W1 to enhance the stripping of the carrier substrate CST corresponding to the protruding region A, can ensure the minimum width of the third region W3 to protect the effective region AA, and can reduce or minimize the width of the second region W2 with energy change to accurately irradiate the low-energy region W0 and the first region W1 to the effective region AA and the protruding region A, respectively.

[0112] Now refer to Figure 5 For a more detailed description of the laser ablation device 1 (see [link to documentation]), please refer to [link to documentation]( Figure 5 ) and by laser ablation device 1 (see Figure 5 A method for adjusting the energy of the laser beam incident on each region.

[0113] Figure 5 This is a schematic block diagram of a laser ablation apparatus 1 according to one or more embodiments.

[0114] Figure 6 This is a schematic perspective view of a laser ablation apparatus 1 according to one or more embodiments.

[0115] Figure 7 This is a plan view of a beam cutter 1000 according to one or more embodiments. Figure 8 and Figure 9 This is a cross-sectional view of a beam cutter 1000 according to one or more embodiments. Figure 10 yes Figure 6 A magnified view of the XA region. Figure 11 yes Figure 6 A magnified view of the XB region. Figure 12 yes Figure 11 A magnified view of the XD region. Figure 13 yes Figure 6 A magnified view of the XC region.

[0116] refer to Figures 5 to 13 The laser lift-off apparatus 1 according to one or more embodiments can be an apparatus that uses a laser to peel the carrier substrate CST from the panel substrate PST. For example, the laser lift-off apparatus 1 can be, but is not limited to, an excimer laser lifter (ELP).

[0117] The laser stripping device 1 may include a laser beam generator 100, a telescope lens 200, a homogenizer 300, a short-axis Fourier lens 400, a short-axis slit 500, a path controller 600, a long-axis Fourier lens 800, a projection lens 900, a beam cutter 1000, and a STG.

[0118] Laser beam generator 100 can be configured to generate a laser beam LSR. In one or more embodiments, laser beam generator 100 can be configured to generate a laser beam LSR using an excimer laser. However, this disclosure is not limited thereto. In one or more embodiments, laser beam generator 100 can be configured to generate a laser beam LSR using a solid-state laser.

[0119] The laser beam generator 100 may include at least one light source. The light source may be configured to generate a laser beam LSR using a laser. The laser beam LSR may be generated in a Gaussian shape. The laser beam LSR may have a wavelength of about 300 nm to about 410 nm, but this disclosure is not limited thereto.

[0120] A laser beam LSR can be converted into a final laser beam LSRL using multiple optical devices. The final laser beam LSRL can have a line shape, with a major axis length Dx in the major axis direction LA and a minor axis length Dy in the minor axis direction SA.

[0121] The optical components will now be described in more detail. The optical components may include a telescope lens 200, a homogenizer 300, a short-axis Fourier lens 400, a short-axis slit 500, a path controller 600, a long-axis Fourier lens 800, a projection lens 900, and a beam cutter 1000.

[0122] The accompanying drawings illustrate, by way of example, one or more embodiments in which the telescope lens 200, homogenizer 300, short-axis Fourier lens 400, short-axis slit 500, long-axis Fourier lens 800, and projection lens 900 are implemented as lenses. However, this disclosure is not limited thereto. For example, the telescope lens 200, homogenizer 300, short-axis Fourier lens 400, short-axis slit 500, long-axis Fourier lens 800, and projection lens 900 may also be implemented using at least one of a lens and a mirror.

[0123] The telescope lens 200 can be configured to magnify and transmit a laser beam LSR incident on it, or it can be configured to transmit the laser beam LSR at the same magnification. In one or more embodiments, the telescope lens 200 may include a first telescope lens and a second telescope lens, the first telescope lens being configured to adjust the magnification (or magnification rate) in the major axis direction LA, and the second telescope lens being configured to adjust the magnification (or magnification rate) in the minor axis direction SA. However, this disclosure is not limited thereto, and a telescope lens 200 may also be configured to adjust the magnification (or magnification rate) in both the major axis direction LA and the minor axis direction SA.

[0124] The homogenizer 300 can be configured to convert a laser beam LSR with a Gaussian energy density into a laser beam LSR with a uniform energy density in the long axis direction LA and the short axis direction SA. The homogenizer 300 may include at least any one of a sawtooth lens, a light guide made of a mirror, and a fly-eye lens.

[0125] In one or more embodiments, the homogenizer 300 may include a short-axis homogenizer 310 and a long-axis homogenizer 320. The short-axis homogenizer 310 may be configured to generate a laser beam LSR with a uniform energy density in the short-axis direction SA, and the long-axis homogenizer 320 may be configured to generate a laser beam LSR with a uniform energy density in the long-axis direction LA.

[0126] For example, Figure 10 The illuminance distribution of the laser beam LSR passing through the short-axis homogenizer 310 is shown. (Example) Figure 10 As shown, the laser beam LSR passing through the short-axis homogenizer 310 can have a substantially uniform (e.g., uniform) energy density along the short-axis direction SA. For example, the laser beam LSR passing through the short-axis homogenizer 310 can be divided into multiple laser beam LSRs spaced at regular intervals along the short-axis direction SA. The laser beam LSRs spaced at regular intervals along the short-axis direction SA can have a substantially uniform (e.g., uniform) energy density.

[0127] In one or more embodiments, the laser beam LSR passing through the long-axis homogenizer 320 can have a substantially uniform (e.g., uniform) energy density along the long-axis direction LA. For example, the laser beam LSR passing through the long-axis homogenizer 320 can be divided into a plurality of laser beam LSRs spaced at regular intervals along the long-axis direction LA. The laser beam LSRs spaced at regular intervals along the long-axis direction LA can have a substantially uniform (e.g., uniform) energy density.

[0128] In the accompanying drawings, the laser beam LSR can pass through the short-axis equalizer 310 and then through the long-axis equalizer 320. However, this disclosure is not limited thereto. For example, the order of the short-axis equalizer 310 and the long-axis equalizer 320 can be reversed. In this case, the laser beam LSR can pass through the long-axis equalizer 320 and then through the short-axis equalizer 310.

[0129] The short-axis Fourier lens 400 can alter the path of the laser beam LSR, allowing the laser beam LSR, which diffuses along the short-axis direction SA through the short-axis homogenizer 310, to be focused onto the short-axis slit 500. In one or more embodiments, the short-axis Fourier lens 400 may include, but is not limited to, a cylindrical convex lens.

[0130] The short-axis slit 500 can define the width of the laser beam LSR along its short-axis direction SA. For example, the short-axis slit 500 may include an opening having a short width along the short-axis direction SA and a long width along the long-axis direction LA. Figure 11 As shown, a laser beam LSR passing through the opening of the short-axis slit 500 may include multiple segmented laser beam SLSRs. The width of each segmented laser beam SLSR in the short-axis direction SA may be limited by the width of the opening. For example, the width of each segmented laser beam SLSR in the short-axis direction SA may be smaller than the width of the opening.

[0131] For example, Figure 11 The illuminance distribution of the laser beam LSR passing through the short axis slit 500 is shown. Figure 12 yes Figure 11 A magnified view of a portion. For example... Figure 11 and Figure 12 As shown, the laser beam LSR passing through the minor axis slit 500 can include multiple segmented laser beams SLSR spaced apart from each other in the minor axis direction SA. The laser beam LSR passing through the minor axis slit 500 can be segmented into multiple segmented laser beams SLSR by diffraction phenomena.

[0132] In one or more embodiments, the intensity of the segmented laser beam SLSR can increase from the edge toward the center in the minor axis direction SA. For example, the pulse PLS of the segmented laser beam SLSR can increase from the edge toward the center. However, this disclosure is not limited thereto, and the intensity of the segmented laser beam SLSR can also be the same.

[0133] The path controller 600 can control the travel distance and direction of the laser beam LSR according to the design structure of the laser stripping device 1. In one or more embodiments, the path controller 600 may include at least one reflector. For example, the path controller 600 may include a first mirror 610 and a second mirror 620. However, this disclosure is not limited thereto. The number and position of the reflectors can be varied.

[0134] A laser beam LSR can change its direction of travel by mirror reflection. Even in a narrow space, the distance a laser beam LSR travels can increase depending on the degree to which its direction of travel is changed. Therefore, the focusing and diffusion of a laser beam LSR can be altered.

[0135] In one or more embodiments, the path controller 600 may not be provided.

[0136] The long-axis Fourier lens 800 can alter the path of the laser beam LSR, allowing the laser beam LSR, diffused by the long-axis equalizer 320 along the long-axis direction LA, to be focused onto the image plane. In one or more embodiments, the long-axis Fourier lens 800 may include, but is not limited to, a cylindrical convex lens.

[0137] The projection lens 900 can be configured to adjust the width of the laser beam LSR along its minor axis SA and its major axis LA. The projection lens 900 can be configured to adjust the width of the laser beam LSR along both its minor axis SA and major axis LA while maintaining the shape of the laser beam LSR.

[0138] In the accompanying drawings, the laser beam LSR passes through the long-axis Fourier lens 800 and then through the projection lens 900. However, this disclosure is not limited thereto. For example, the order of the long-axis Fourier lens 800 and the projection lens 900 can be reversed. In this case, the laser beam LSR can be configured to pass through the projection lens 900 and then through the long-axis Fourier lens 800.

[0139] A beam cutter 1000 may be located between a projection lens 900 and an image plane (e.g., a stage STG). The beam cutter 1000 may block the path of a portion of the laser beam LSR incident on it by reflecting or absorbing that portion. The beam cutter 1000 may block a portion of the laser beam LSR incident on it and is configured to transmit a portion of the laser beam LSR, thereby increasing or decreasing the energy density in a specific region of the final laser beam LSR.

[0140] In one or more embodiments, such as Figure 7 As shown, beam cutter 1000 may include a first beam cutter 1100 and a second beam cutter 1200. The first beam cutter 1100 and the second beam cutter 1200 may be spaced apart from each other in the long axis direction LA. However, this disclosure is not limited thereto, and the first beam cutter 1100 and the second beam cutter 1200 may also overlap each other by moving in the long axis direction LA, as will be discussed later. Figure 15 More detailed descriptions are available in [etc.].

[0141] The first beam cutter 1100 may include a first opening OP1 and a second opening OP2, and the second beam cutter 1200 may include a third opening OP3 and a fourth opening OP4. The first opening OP1 and the second opening OP2 may be physically connected to each other (or integrated as one unit), and the third opening OP3 and the fourth opening OP4 may be physically connected to each other (or integrated as one unit).

[0142] In the long axis direction LA, the second opening OP2 can be located on one side of the first opening OP1, for example, on the side adjacent to the second beam cutter 1200. That is, the second opening OP2 can be located between the first opening OP1 and the second beam cutter 1200 in the long axis direction LA. In the long axis direction LA, the fourth opening OP4 can be located on one side of the third opening OP3, for example, on the side adjacent to the first beam cutter 1100. That is, the fourth opening OP4 can be located between the third opening OP3 and the first beam cutter 1100 in the long axis direction LA.

[0143] The first opening OP1 and the third opening OP3 may extend in the minor axis direction SA, and the second opening OP2 and the fourth opening OP4 may extend in the major axis direction LA. The first opening OP1 may be located approximately at the center of the first beam cutter 1100, and the third opening OP3 may be located approximately at the center of the second beam cutter 1200. The second opening OP2 may extend from the first opening OP1 in the major axis direction LA to cut (or pass through, separate, or fork) the end 1100a of the first beam cutter 1100 in the major axis direction LA. The fourth opening OP4 may extend from the third opening OP3 in the major axis direction LA to cut (or pass through, separate, or fork) the end 1200a of the second beam cutter 1200 in the major axis direction LA.

[0144] In one or more embodiments, the shapes of the first beam cutter 1100 and the second beam cutter 1200 may be symmetrical to each other with respect to the axis extending in the minor axis direction SA, but this disclosure is not limited thereto.

[0145] The first beam cutter 1100 and the second beam cutter 1200 can be alternately arranged in the vertical direction VA. For example, the first beam cutter 1100 can be higher than the second beam cutter 1200 by a first height difference H1. Therefore, as will be explained later... Figure 15 As described in more detail in the above, when the first beam cutter 1100 and the second beam cutter 1200 move in the long axis direction LA to overlap each other in the vertical direction VA, the possibility of them interfering with each other can be reduced or prevented.

[0146] In the accompanying drawings, the vertical direction VA can be, for example, a direction that intersects and is orthogonal to the major axis direction LA and the minor axis direction SA. The vertical direction VA can also be a direction parallel to the path direction of the laser beam LSR.

[0147] The length S1 of the first opening OP1 along its minor axis SA can be greater than the length S2 of the second opening OP2 along its minor axis SA. The length S3 of the third opening OP3 along its minor axis SA can be greater than the length S4 of the fourth opening OP4 along its minor axis SA. Therefore, the beam cutter 1000 can increase or decrease the energy density in a specific region of the final laser beam LSRL.

[0148] For example, Figure 13 The illuminance distribution of the final laser beam LSRL is shown. After the laser beam LSR passes through the beam cutter 1000, the final laser beam LSRL may include a flat top region (FTA) and an energy enhancement region (EHA) in the energy distribution. The energy enhancement region EHA may be a portion with a higher energy density than the flat top region (FTA).

[0149] The flat top region FTA can be a region where its energy density decreases as the laser beam LSR passes through the second opening OP2 and the fourth opening OP4. The energy enhancement region EHA can include a first energy enhancement region EHA1 and a second energy enhancement region EHA2. The first energy enhancement region EHA1 can be a region where its energy density increases as the laser beam LSR passes through the first opening OP1, and the second energy enhancement region EHA2 can be a region where its energy density increases as the laser beam LSR passes through the third opening OP3.

[0150] Please refer to later Figures 15 to 20 The method of forming a flat top region (FTA) and an energy-enhanced region (EHA) using a beam cutter 1000 is described in more detail.

[0151] Now refer to Figure 14 The laser ablation process performed using a final laser beam LSRL, comprising a flat top region FTA and an energy-enhanced region EHA, is described in more detail.

[0152] Figure 14 This is a schematic cross-sectional view illustrating a process of peeling a carrier substrate CST from a panel substrate PST using a laser lifter 1 according to one or more embodiments.

[0153] Apart from Figures 4 to 13 In addition, refer to Figure 14 The carrier substrate CST in the effective region AA can be stripped using a final laser beam LSRL with an energy density of a flat top region FTA. As described above, since the pixel is in the effective region AA, the carrier substrate CST corresponding to the effective region AA can be stripped using a final laser beam LSRL with an energy density of a flat top region FTA that is relatively low in energy. Therefore, the weakening of the adhesion of the components on the first substrate SUB1 can be reduced or prevented, and damage to the components can be minimized or reduced.

[0154] The carrier substrate CST corresponding to the protruding region A and the boundary region BR can be peeled off using a final laser beam LSRL with an energy density having an energy enhancement region EHA. As described above, because the barrier layer BL is located between the carrier substrate CST and the second substrate SUB2 in the protruding region A, the carrier substrate CST corresponding to the protruding region A can be peeled off using a final laser beam LSRL with an energy density having a relatively high energy enhancement region EHA. Therefore, sufficient energy can be applied to the protruding region A, thereby completely peeling off the carrier substrate CST. Therefore, since no peeling blade is used, damage to the first substrate SUB1 can be minimized or reduced. Therefore, the reliability of the laser peeling process can be improved.

[0155] As per the above reference Figure 4 As described, the laser beam LSRs of the second region W2 and the third region W3 can illuminate the intermediate region B. The laser beam LSRs of the second region W2 and the third region W3 can be included in the energy enhancement region EHA. See later. Figure 24 and Figure 25 The relationship between the second region W2 and the third region W3 and the energy enhancement region EHA is described in more detail.

[0156] The method for forming the flat top region FTA and the energy enhancement region EHA of the final laser beam LSRL will now be described in more detail. References will be made to... Figures 15 to 18 The method for adjusting the position and width of the flat top region FTA and the energy-enhancing region EHA is described in more detail, and references will be made. Figure 19 The method for adjusting the energy density of the flat top region FTA and the energy-enhancing region EHA is described in more detail. (See reference...) Figure 20 The method for adjusting the location, width, and energy density of the flat top region FTA and the energy-enhancing region EHA is described in more detail.

[0157] Figure 15 This is a plan view illustrating the process by which a beam cutter 1000, according to one or more embodiments, is configured to adjust the energy distribution of the final laser beam LSRL by moving in the long axis direction LA. Figure 16 and Figure 17 This is a cross-sectional view showing the process in which a beam cutter 1000, according to one or more embodiments, is configured to adjust the energy distribution of the final laser beam LSRL by moving in the long axis direction LA. Figure 18 This is a schematic diagram showing the energy distribution of the final laser beam LSRL of a laser stripping apparatus 1 according to one or more embodiments.

[0158] refer to Figures 15 to 18Each of the first beam cutter 1100 and the second beam cutter 1200 may further include a separate driver configured to provide driving force in the long axis direction LA. Therefore, each of the first beam cutter 1100 and the second beam cutter 1200 can move in the long axis direction LA.

[0159] Figure 16 and Figure 17 The first beam cutter 1100 and the second beam cutter 1200 shown can at least partially overlap each other in the vertical direction VA, or the ends 1100a of the first beam cutter 1100 and the ends 1200a of the second beam cutter 1200 can coincide with each other in the vertical direction VA. Therefore, as Figure 15 As shown, the second opening OP2 and the fourth opening OP4 can appear as a single opening connected (or integrated) in a plan view. For example, the opening formed by the first opening OP1 to the fourth opening OP4 of the beam cutter 1000 in this state can have an H shape.

[0160] like Figure 16 As shown, in the cross section along the long axis direction LA of the portions of the first opening OP1 and the third opening OP3 that do not overlap with the second opening OP2 and the fourth opening OP4 (e.g., a cross section taken along line X3-X3'), a portion of each of the segmented laser beams SLSR can pass through the first opening OP1 and the third opening OP3, but another portion can be blocked between the first opening OP1 and the third opening OP3 by the first beam cutter 1100 and the second beam cutter 1200.

[0161] like Figure 17 As shown, in a cross section along the long axis direction LA of the portion where the second opening OP2 and the fourth opening OP4 are arranged (e.g., a cross section taken along line X4-X4'), the segmented laser beam SLSR can pass through all the first openings OP1 to the fourth opening OP4.

[0162] Therefore, the amount of segmented laser beams (SLSR) passing through the openings per unit area in the minor axis direction SA in the region with the first opening OP1 and the third opening OP3 can be greater than the amount of segmented laser beams (SLSR) passing through the openings per unit area in the region with the second opening OP2 and the fourth opening OP4.

[0163] Therefore, as Figure 18 As shown, the final laser beam LSRL may include a flat top region FTA and an energy-enhancing region EHA. The energy density of the flat top region FTA is reduced as the laser beam LSR passes through the second opening OP2 and the fourth opening OP4, and the energy density of the energy-enhancing region EHA is increased as the laser beam LSR passes through the first opening OP1 and the third opening OP3.

[0164] In one or more embodiments, when the first beam cutter 1100 and the second beam cutter 1200 move toward the center in the long axis direction LA, the first energy enhancement region EHA1 and the second energy enhancement region EHA2 of the final laser beam LSRL can move toward the center, and the width of the flat top region FTA of the final laser beam LSRL can be reduced.

[0165] Because the size and position of the effective area AA, the protruding area A, the middle area B, and the boundary area BR are different in each display device to be manufactured (see DD). Figure 1 The positions and widths of the flat top region FTA and the energy-enhancing region EHA are different, so they can be appropriately changed according to the display device DD to be manufactured.

[0166] The laser stripping device 1 can appropriately adjust the position and width of the flat top region (FTA) and the energy enhancement region (EHA) by adjusting the position of the beam cutter 1000 in the long axis direction LA. Therefore, it is not necessary to replace the beam cutter 1000 for each display device DD to be manufactured; the position and width of the flat top region (FTA) and the energy enhancement region (EHA) can be adjusted by methods such as including a separate driver configured to provide driving force in the long axis direction LA.

[0167] Figure 19 This is a plan view showing the process by which the beam cutter 1000 adjusts the energy distribution of the final laser beam LSRL by moving along the short axis direction SA.

[0168] Apart from Figures 15 to 18 In addition, refer to Figure 19 Each of the first beam cutter 1100 and the second beam cutter 1200 may further include a separate driver configured to provide driving force in the minor axis direction SA. Therefore, each of the first beam cutter 1100 and the second beam cutter 1200 can move in the minor axis direction SA.

[0169] like Figure 15 As shown, Figure 19 The first beam cutter 1100 and the second beam cutter 1200 shown can at least partially overlap each other in the vertical direction VA, or the ends 1100a of the first beam cutter 1100 and the ends 1200a of the second beam cutter 1200 can coincide in the vertical direction VA. That is, the ends 1100a of the first beam cutter 1100 and the ends 1200a of the second beam cutter 1200 can overlap each other in the vertical direction VA. Therefore, as... Figure 15As shown, the opening formed by the combination of the first opening OP1 to the fourth opening OP4 of the beam cutter 1000 can have an H shape.

[0170] When each of the first beam cutter 1100 and the second beam cutter 1200 moves toward the edge of the segmented laser beam SLSR in the minor axis direction SA, as... Figure 15 As shown, when each of the first beam cutter 1100 and the second beam cutter 1200 is located at the center of the segmented laser beam SLSR in the short axis direction SA, the amount of segmented laser beam SLSR passing through the opening per unit area in the short axis direction SA can be reduced.

[0171] Therefore, in Figure 18 In the energy distribution of the final laser beam LSRL shown, the energy density of the flat top region FTA and the energy-enhancing region EHA (e.g., Figure 4 The first energy (E1) and the second energy (E2) can be reduced.

[0172] Because the transmittance of the effective area AA, the protruding area A, the middle area B, and the boundary area BR varies in each display device to be manufactured (see DD). Figure 1 The energy density of the flat top region FTA and the energy enhancement region EHA are different, so the intensity of the energy density can also be appropriately changed according to the display device DD to be manufactured.

[0173] The laser stripping device 1 can appropriately adjust the intensity of the energy density of the flat top region (FTA) and the energy enhancement region (EHA) by adjusting the position of the beam cutter 1000 in the minor axis direction SA and the amount of the segmented laser beam SLSR overlapping the opening of the beam cutter 1000. Therefore, it is not necessary to replace the beam cutter 1000 for each display device DD to be manufactured; the intensity of the energy density of the flat top region (FTA) and the energy enhancement region (EHA) can be adjusted by methods such as including a separate driver configured to provide driving force in the minor axis direction SA.

[0174] Figure 20 This is a plan view showing the process in which the beam cutter 1000 is configured to adjust the energy distribution of the final laser beam LSRL by moving in the long axis direction LA and the short axis direction SA.

[0175] Apart from Figures 15 to 19 In addition, refer to Figure 20Each of the first beam cutter 1100 and the second beam cutter 1200 can move along the major axis direction LA and the minor axis direction SA. For example, the first beam cutter 1100 and the second beam cutter 1200 can move towards the center along the major axis direction LA. In the minor axis direction SA, the first beam cutter 1100 can move to one side, and the second beam cutter 1200 can move to the other side.

[0176] Therefore, the width of the opening formed by the combination of the second opening OP2 and the fourth opening OP4 in the minor axis direction SA can be further reduced. In one or more embodiments, the amount of segmented laser beam SLSR passing through the first opening OP1 and the third opening OP3 per unit area can be greater than [amount not specified]. Figure 19 The situation.

[0177] In this way, the laser stripping device 1 can adjust the position, width, and energy density of the flat top region FTA and the energy-enhanced region EHA by adjusting the positions of the first beam cutter 1100 and the second beam cutter 1200 in the long axis direction LA and the short axis direction SA.

[0178] Figure 21 This is a plan view of the beam cutter 1000' according to the first comparative embodiment. Figure 22 This is a cross-sectional view of the beam cutter 1000' according to the first comparative embodiment. Figure 23 This is a schematic diagram showing the energy distribution of the final laser beam LSRL of the laser stripping apparatus according to the first comparative embodiment.

[0179] Apart from Figure 18 In addition, refer to Figures 21 to 23 The beam cutter 1000' according to the first comparative embodiment may include a first beam cutter 1100' and a second beam cutter 1200'. The first beam cutter 1100' and the second beam cutter 1200' of the beam cutter 1000' according to the first comparative embodiment may not include an opening.

[0180] According to the first comparative embodiment, the beam cutter 1000' can transmit a portion of each of the segmented laser beams SLSR through the space between the first beam cutter 1100' and the second beam cutter 1200'. For example, the edge portions of each of the segmented laser beams SLSR in the long axis direction LA can be blocked, while the approximately central portions in the long axis direction LA can be transmitted.

[0181] Therefore, as Figure 23As shown, the energy distribution shape of the final laser beam LSRL passing through the beam cutter 1000' according to the first comparative embodiment may include only the flat top region FTA in most areas. The energy distribution of the final laser beam LSRL passing through the beam cutter 1000' according to the first comparative embodiment may not include the energy enhancement region EHA.

[0182] In one or more embodiments, the final laser beam LSRL passing through the beam cutter 1000 may include the flat top region FTA and the energy enhancement region EHA as described above.

[0183] The laser ablation apparatus 1 uses a final laser beam LSRL, comprising a flat top region FTA and an energy-enhancing region EHA, to perform the laser ablation process. Therefore, the reliability of the laser ablation process can be improved.

[0184] Figure 24 The energy distribution of the final laser beam LSRL in the laser stripping device 1 is related to... Figure 18 An enlarged view of the portion corresponding to the XE region. Figure 25 The energy distribution of the final laser beam in the laser stripping apparatus 1 according to the second comparative embodiment is related to... Figure 18 An enlarged view of the portion corresponding to the XE region.

[0185] Apart from Figure 4 , Figure 6 and Figure 18 In addition, refer to Figure 24 and Figure 25 As shown in Figure G1, the energy enhancement region EHA in the final laser beam LSRL can include the above reference. Figure 4 The first region (or high-energy region) W1, the second region (or sloping region) W2, and the third region (or margin region) W3 are described, and the flat top region FTA may include at least a portion of the low-energy region W0.

[0186] like Figure 6 As shown, by bringing the beam cutter 1000 closer to or closer to the image plane (e.g., STG), the laser stripping device 1 can reduce or minimize the width L1 of the second region W2.

[0187] For example, as the segmented laser beam SLSR passes through the opening of the beam cutter 1000, a second region W2 can be formed by the diffraction of the segmented laser beam SLSR. The second region W2 can be a region where the energy density of the final laser beam LSRL continuously changes due to the diffraction of the segmented laser beam SLSR between the first region W1 and the third region W3 (e.g., the boundary between the first opening OP1 and the second opening OP2, or the boundary between the third opening OP3 and the fourth opening OP4). Because the diffraction distance of the laser beam LSR decreases as the beam cutter 1000 is positioned closer to the image plane, the width L1 of the second region W2 can be reduced or minimized. The width L1 of the second region W2 can be approximately 12 mm or less.

[0188] In one or more embodiments, in the laser stripping apparatus 1 according to the second comparative embodiment, the beam cutter 1000 can be positioned ahead of the long-axis Fourier lens 800 in the path of the laser beam LSR. In this case, as Figure 25 As shown in the second figure G2, the width L2 of the second region W2 can be increased, and the range of the portion having energy between the first energy E1 and the second energy E2 can be increased.

[0189] In the laser stripping apparatus 1, because the width L1 of the second region W2 is minimized or reduced as described above, the possibility of the effective region AA irradiated by the laser beam LSR having a first energy E1 being irradiated by a laser beam LSR having an energy higher than the first energy E1 and thus damaged can be reduced or prevented. In one or more embodiments, the possibility of the protruding region A irradiated by the laser beam LSR having a second energy E2 being irradiated by a laser beam LSR having an energy lower than the second energy E2 and thus stripped less can be reduced or prevented.

[0190] As described above, the laser ablation device 1 can adjust the position and width of the flat top region FTA and the energy-enhancing region EHA by adjusting the position of the beam cutter 1000 in the long axis direction LA. Therefore, the minimum width of the third region W3 can be appropriately ensured.

[0191] For example, the energy enhancement region EHA can be moved towards the edge by adjusting the position of the beam cutter 1000 in the long axis direction LA. Therefore, the boundary point between the third region W3 and the second region W2 can be positioned closer to the edge than the boundary of the effective region AA. This ensures the width of the third region W3 and minimizes or reduces damage to the effective region AA. The width of the third region W3 can be approximately 4 mm or greater.

[0192] In the following, other embodiments of the laser lift-off apparatus according to one or more embodiments and substrate lift-off methods using the laser lift-off apparatus will be described in more detail. In the embodiments below, elements identical to those in the above embodiments will be indicated by the same reference numerals, and redundant descriptions of them may be omitted or may be given only briefly, with the differences being the primary focus.

[0193] Figure 26 This is a plan view illustrating a first laser irradiation operation using a beam cutter 1000 according to one or more embodiments. Figure 27 This is a cross-sectional view showing a first laser irradiation operation using a beam cutter 1000 according to one or more embodiments. Figure 28 This is a plan view illustrating a second laser irradiation operation using a beam cutter 1000 according to one or more embodiments. Figure 29 This is a cross-sectional view showing a second laser irradiation operation using a beam cutter 1000 according to one or more embodiments.

[0194] refer to Figures 26 to 29 Laser ablation device 1 and reference Figure 7 The laser stripping device 1 described above differs from the laser stripping device 1 in that the shape of the beam cutter 1000 and the process of the substrate stripping method are different.

[0195] For example, the beam cutter 1000 of the laser ablation apparatus 1 may include a first beam cutter 1100 and a second beam cutter 1200. The first beam cutter 1100 may include a first opening OP1, and the second beam cutter 1200 may include a third opening OP3. (Refer to reference...) Figure 7 Unlike the laser stripping device 1 described above, in the laser stripping device 1, the first beam cutter 1100 may not include the second opening OP2, and the second beam cutter 1200 may not include the fourth opening OP4.

[0196] The substrate stripping method using the laser stripping device 1 may include a first laser irradiation operation and a second laser irradiation operation.

[0197] First, in the first laser irradiation operation, such as Figure 26 and Figure 27As shown, the end 1100a of the first beam cutter 1100 may coincide with the outer boundary (e.g., the left boundary in the figure) of the first energy enhancement region EHA1, and the end 1200a of the second beam cutter 1200 may coincide with the outer boundary (e.g., the right boundary in the figure) of the second energy enhancement region EHA2. That is, a space can be formed between the first beam cutter 1100 and the second beam cutter 1200. This space can be formed as a combined region of the first energy enhancement region EHA1, the flat top region FTA, and the second energy enhancement region EHA2.

[0198] In the first laser irradiation operation, beam cutter 1000 can be configured to transmit a portion of each of the segmented laser beams SLSR through the space between the first beam cutter 1100 and the second beam cutter 1200. For example, the edge portions of each of the segmented laser beams SLSR in the long axis direction LA can be blocked, and approximately the central portion can be transmitted.

[0199] Therefore, in the first laser irradiation operation, the final laser beam LSRL can have the same energy density intensity in both the flat top region FTA and the energy enhancement region EHA. Thus, in the display device DD irradiated with the final laser beam LSRL in both the flat top region FTA and the energy enhancement region EHA (see...), Figure 1 In this context, the same level of energy can be applied to the effective region AA, the intermediate region B, the protruding region A, and the boundary region BR.

[0200] Next, in the second laser irradiation operation, as Figure 28 and Figure 29 As shown, each of the first beam cutter 1100 and the second beam cutter 1200 can be moved towards the center in the long axis direction LA. At this time, the first opening OP1 of the first beam cutter 1100 can be positioned to coincide with the first energy enhancement region EHA1, and the third opening OP3 of the second beam cutter 1200 can be positioned to coincide with the second energy enhancement region EHA2. The width of the first opening OP1 of the first beam cutter 1100 in the long axis direction LA can be equal to the width of the first energy enhancement region EHA1 in the long axis direction LA, and the width of the third opening OP3 of the second beam cutter 1200 in the long axis direction LA can be equal to the width of the second energy enhancement region EHA2 in the long axis direction LA.

[0201] In the second laser irradiation operation, the beam cutter 1000 can be configured to transmit a portion of each of the segmented laser beams SLSR through the first opening OP1 of the first beam cutter 1100 and the third opening OP3 of the second beam cutter 1200. For example, the portion of each of the segmented laser beams SLSR that overlaps with the first opening OP1 and the third opening OP3 (i.e., overlaps with the energy enhancement region EHA) can be transmitted, and other portions of each of the segmented laser beams SLSR that overlap with the flat top region FTA can be blocked.

[0202] Therefore, in the second laser irradiation operation, additional energy can be applied to the display device DD irradiated by the final laser beam LSRL of the energy enhancement region EHA (see...). Figure 1 The middle region B, the protruding region A, and the boundary region BR in the ().

[0203] In the laser lift-off apparatus 1 and the substrate lift-off method using the laser lift-off apparatus 1, as referenced above... Figure 7 The energy distribution of the final laser beam LSRL of the laser stripping device 1 described above (see...) Figure 18 In the first laser irradiation operation and the second laser irradiation operation, the energy enhancement region EHA can have a higher energy in the energy distribution of the laser beam LSR irradiating the display device DD than the flat top region FTA.

[0204] In concluding this detailed description, those skilled in the art will understand that many variations and modifications can be made to the disclosed embodiments without substantially departing from the principles of this disclosure. Therefore, the disclosed embodiments are used in a general and descriptive sense only and not for limiting purposes.

Claims

1. A laser ablation apparatus configured to convert a first beam into a second beam having a width in a first direction and in a second direction different from the first direction, the laser ablation apparatus comprising: A laser beam generator configured to generate the first beam; A homogenizer configured to homogenize the first beam; as well as A beam cutter includes a first beam cutter and a second beam cutter, the first beam cutter and the second beam cutter defining at least two openings of different corresponding lengths in a first direction, and configured to generate a second beam by transmitting and blocking corresponding portions of the first beam.

2. The laser ablation device according to claim 1, wherein, The first beam cutter defines a first opening and a second opening extending from the first opening in the second direction, and The second beam cutter defines a third opening and a fourth opening extending from the third opening in the second direction.

3. The laser ablation device according to claim 2, wherein, The width of the first opening in the first direction is greater than the width of the second opening in the first direction, and The width of the third opening in the first direction is greater than the width of the fourth opening in the first direction.

4. The laser ablation device according to claim 2, wherein, The first beam cutter includes a first end, The second beam cutter includes a second end facing the first end. Wherein, the second opening causes the first end to fork, and The fourth opening causes the second end to fork.

5. The laser ablation device according to claim 2, wherein, The energy distribution of the second beam includes a first region and a second region with higher energy than the first region.

6. The laser ablation apparatus according to claim 5, wherein, The first region corresponds to the first beam of light passing through the second opening and the fourth opening.

7. The laser ablation apparatus according to claim 6, wherein, The second region includes a first sub-region and a second sub-region opposite to the first sub-region, wherein the first region lies between the first sub-region and the second sub-region. Wherein, the first sub-region corresponds to the first beam of light passing through the first opening, and The second sub-region corresponds to the first beam passing through the third opening.

8. The laser ablation apparatus according to claim 5, wherein, The second region includes: The margin region is located on one side of the first region; The inclined region is located on one side of the margin region; and The high-energy region is located on one side of the inclined region.

9. The laser ablation apparatus according to claim 8, wherein, The width of the margin region is 4 mm or greater, and The width of the inclined region is 12 mm or less.

10. The laser ablation apparatus according to claim 2, wherein, The shapes of the first beam cutter and the second beam cutter are symmetrical with respect to the axis extending in the first direction.

11. The laser ablation apparatus according to claim 1, wherein, The first beam cutter and the second beam cutter are alternately arranged in a third direction different from the first direction and the second direction.

12. The laser ablation apparatus according to claim 11, wherein, The first beam cutter and the second beam cutter also include a driver configured to provide driving force in at least one of the first direction and the second direction.

13. The laser stripping apparatus of claim 1 further includes a telescope lens located between the laser beam generator and the homogenizer and configured to amplify the first beam or to transmit the first beam at the same magnification.

14. The laser ablation apparatus of claim 13, further comprising a short-axis slit between the homogenizer and the beam cutter and defining an opening having a short width in the first direction and a long width in the second direction.

15. The laser stripping apparatus of claim 14, further comprising a short-axis Fourier lens, the short-axis Fourier lens being located between the homogenizer and the short-axis slit and configured to focus the first beam transmitted through the telescope lens onto the short-axis slit along the first direction.

16. The laser stripping apparatus of claim 14 further comprises a long-axis Fourier lens, the long-axis Fourier lens being between the short-axis slit and the beam cutter and configured to focus the first beam transmitted through the telescope lens onto the image plane in which the second beam is incident.

17. The laser stripping apparatus of claim 14, further comprising a projection lens between the short-axis slit and the beam cutter and configured to adjust the width of the first beam passing through the short-axis slit in at least either the first direction or the second direction.

18. A laser ablation apparatus configured to convert a first beam into a second beam having a width in a first direction and a width in a second direction different from the first direction, the laser ablation apparatus comprising: A laser beam generator configured to generate the first beam; A homogenizer configured to homogenize the first beam; as well as A beam cutter includes a first beam cutter with a first opening extending in the second direction and a second beam cutter with a second opening extending in the second direction, and is configured to generate the second beam by transmitting and blocking corresponding portions of the first beam.

19. The laser ablation apparatus according to claim 18, wherein, The energy distribution of the second beam includes a first region corresponding to the first beam passing through the space in the second direction between the first beam cutter and the second beam cutter, and a second region having higher energy than the first region.

20. The laser ablation apparatus according to claim 19, wherein, The second region includes: The first sub-region corresponds to the first beam passing through the first opening and the first beam passing through the space; and The second sub-region is opposite to the first sub-region and the first region is located between the first sub-region and the second sub-region, and the second sub-region corresponds to the first beam passing through the second opening and the first beam passing through the space.

21. A substrate peeling method for peeling a carrier substrate from a first substrate of a display device, the display device including the carrier substrate, a first substrate above the carrier substrate, a barrier layer above the first substrate and larger than the first substrate in a plan view, and a second substrate above the barrier layer, the display device having a first region in which pixels are arranged and a second region outside the first region in which the barrier layer does not overlap with the first substrate, the substrate peeling method comprising: The laser stripping device includes a laser beam generator configured to generate the first beam, a homogenizer configured to homogenize the first beam, and a first beam cutter and a second beam cutter configured to generate the second beam by separating the first beam cutter and the second beam cutter and irradiating the first region and the second region with a second beam generated from the laser stripping device. as well as The second beam is irradiated onto the second region by moving the first beam cutter and the second beam cutter closer to each other, wherein the energy intensity of the second beam irradiating the first region is less than the energy intensity of the second beam irradiating the second region.

22. The substrate peeling method according to claim 21, wherein, The first beam cutter defines a first opening, and wherein the second beam cutter defines a second opening, the method further comprising: When the second beam is irradiated onto the first and second regions by separating the first and second beam cutters, the first beam passes through the space between the first and second beam cutters. When the second beam is irradiated toward the second region by moving the first beam cutter and the second beam cutter closer to each other, the first beam passes through the first opening and the second opening.

23. The substrate peeling method according to claim 21, wherein, The display device further includes a third region between the first region and the second region, and Wherein, the energy intensity of the second light beam illuminating the third region is greater than or equal to the energy intensity of the second light beam illuminating the first region, and less than or equal to the energy intensity of the second light beam illuminating the second region.

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