Electrostatic chuck seal and electrostatic chuck assembly
By designing an electrostatic chuck seal with high plasma resistance, and adopting a T-shaped cross-section and chamfered structure, the problem of easy damage to the electrostatic chuck seal in the plasma environment was solved, resulting in better sealing effect and extended equipment life.
Patent Information
- Application Number
- CN202410627050.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-20
- Publication Date
- 2025-11-21
AI Technical Summary
Existing electrostatic chuck seals are easily damaged in plasma environments, leading to adhesive layer etching, helium leakage, shortened equipment lifespan, and increased costs.
A plasma-resistant electrostatic chuck seal was designed with a T-shaped cross-section and chamfered structure to fill the grooves of the electrostatic chuck. It uses perfluoropolymer material and its dimensions are optimized to match the grooves of the adhesive layer to form an O-ring seal.
It effectively prevents plasma etching of the bonding layer, reduces helium leakage, extends the service life of the electrostatic chuck, and improves machine uptime.
Smart Images
Figure CN120991077A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to an electrostatic chuck seal and an electrostatic chuck assembly including the same. BACKGROUND
[0002] An electrostatic chuck (also known as an electrostatic chuck, ESC or E-Chuck) plays an important role in many aspects of a semiconductor manufacturing process. Ion implantation, ion implantation, physical vapor deposition (PVD), chemical vapor deposition (CVD) and other processes in the semiconductor manufacturing process all require the stable fixation of the wafer, so an electrostatic chuck is needed to hold it.
[0003] An electrostatic chuck is a fixture that uses electrostatic adsorption principles to hold and fix the adsorbed object, and can control the wafer surface temperature by back blowing gas, suitable for vacuum and plasma environment, can adsorb wafers and other adsorbed objects, and can keep the adsorbed objects in good flatness, can inhibit the deformation of the adsorbed objects in the process, and can adjust the temperature of the adsorbed objects.
[0004] The bonding layer in the electrostatic chuck that bonds the ceramic layer and the electrode layer, the bonding layer that bonds the heater layer and the bottom plate layer, etc. needs to be protected by a seal to prevent the bonding layer from being damaged by plasma erosion and thus causing the electrostatic chuck to be damaged. SUMMARY
[0005] Technical problems to be solved by the application
[0006] However, the electrostatic chuck seal of the prior art is damaged by the plasma when exposed to the plasma in the processing chamber, and cannot seal the bonding layer well, resulting in etching of the bonding layer, leakage of backside helium gas into the processing chamber, reduction of the service life of the electrostatic chuck, and increase in cost. In addition, when the equipment issues a backside helium gas leakage alarm, the processing chamber needs to be opened specially to replace the electrostatic chuck, which will cause a loss of machine availability.
[0007] Means for solving the technical problems
[0008] In view of the above problems, the present application provides an electrostatic chuck seal that can better seal the bonding layer of the electrostatic chuck and an electrostatic chuck assembly including the same.
[0009] According to an aspect of the present application, there is provided an electrostatic chuck seal for sealing an electrostatic chuck having, in order from the top, a ceramic layer, a first adhesive layer, an electrode layer, a heater layer, a second adhesive layer, and a base plate layer, the electrostatic chuck having a first annular groove formed radially outward of the radially outer surfaces of the first adhesive layer, the electrode layer, the heater layer, and the base plate layer, which are aligned with each other, and a second annular groove formed between the first annular groove and the radially outer surface of the second adhesive layer, the electrostatic chuck seal being formed as an O-ring, the electrostatic chuck seal characterized by comprising: an annular main seal portion for being disposed in the first annular groove; and an annular protruding portion protruding radially inward from an inner edge of the main seal portion for being disposed in the second annular groove.
[0010] In some embodiments, the electrostatic chuck seal has a T-shaped cross-sectional shape.
[0011] In some embodiments, the length of the protruding portion in the radial direction and the length of the protruding portion in a direction perpendicular to the radial direction are each smaller than the length of the second annular groove in the radial direction and the length of the second annular groove in a direction perpendicular to the radial direction, respectively.
[0012] In some embodiments, the electrostatic chuck seal is formed of a plasma-resistant material.
[0013] In some embodiments, the plasma-resistant material is a perfluorinated resin.
[0014] In some embodiments, the plasma-resistant material has a loss ratio of 4.0% or less when measured after plasma treatment under conditions of a temperature of 100°C, a power of 1200W, a pressure of 50mtorr, and a time of 1 hour.
[0015] According to another aspect of the present application, there is provided an electrostatic chuck seal for sealing an electrostatic chuck having, in order from the top, a ceramic layer, a bonding layer, a spray layer, and a base plate layer, each of the radial outer surfaces of the bonding layer and the spray layer being aligned with each other, and an annular groove being formed on the radial outer side of the radial outer surfaces of the bonding layer and the spray layer, the electrostatic chuck seal being formed as an O-ring for being disposed in the groove, the electrostatic chuck seal being characterized in that the electrostatic chuck seal has a substantially annular main seal portion including a radial inner surface, a radial outer surface, a top surface, and a bottom surface, a corner portion formed by the radial inner surface and the top surface has a chamfer, the radial outer surface of the electrostatic chuck seal is closer to the radial inner side on the bottom surface side than on the top surface side, and a length of the electrostatic chuck seal in a direction perpendicular to the radial direction is equal to a length of the groove in the direction perpendicular to the radial direction.
[0016] In some embodiments, the electrostatic chuck seal is formed of a material having plasma resistance.
[0017] According to still another aspect of the present application, there is provided an electrostatic chuck assembly characterized by including the above-described electrostatic chuck and the above-described electrostatic chuck seal corresponding to the above-described electrostatic chuck.
[0018] Effects of the Invention
[0019] By changing the cross-sectional shape and size of the electrostatic chuck seal so that the electrostatic chuck seal can completely match the groove of the bonding layer of the electrostatic chuck, the electrostatic chuck seal can completely fill the groove of the electrostatic chuck, and the bonding layer of the electrostatic chuck can be effectively protected from being etched by plasma.
[0020] In addition, by using a material having stronger plasma resistance for the electrostatic chuck seal, the bonding layer of the electrostatic chuck can be better protected from being etched by plasma.
[0021] In addition, by providing a chamfer at a corner portion formed by the radial inner surface and the top surface of the electrostatic chuck seal, the electrostatic chuck seal can be easily mounted on the electrostatic chuck.
[0022] With the electrostatic chuck seal of the present application, the problem of damage to the bonding layer of the electrostatic chuck can be fundamentally solved, and thus the service life of the electrostatic chuck can be extended, the cost can be reduced, and the machine operation rate can be improved. BRIEF DESCRIPTION OF DRAWINGS
[0023] Figure 1 is a schematic cross-sectional view showing an electrostatic chuck in one embodiment of the present application.
[0024] Figure 2is a schematic cross-sectional view showing an electrostatic chuck assembly in one embodiment of the present application.
[0025] Figure 3 is a schematic cross-sectional view showing an electrostatic chuck seal in one embodiment of the present application.
[0026] Figure 4 is a schematic cross-sectional view showing an electrostatic chuck assembly in the prior art.
[0027] Figure 5 is a schematic cross-sectional view showing a comparison of the shape and size of an electrostatic chuck seal in one embodiment of the present application and an electrostatic chuck seal in the prior art.
[0028] Figure 6 is a schematic cross-sectional view showing an electrostatic chuck in another embodiment of the present application.
[0029] Figure 7 is a schematic cross-sectional view showing an electrostatic chuck assembly in another embodiment of the present application.
[0030] Figure 8 is a schematic cross-sectional view showing an electrostatic chuck seal in another embodiment of the present application.
[0031] Figure 9 is a schematic cross-sectional view showing an electrostatic chuck assembly in the prior art.
[0032] Figure 10 is a schematic cross-sectional view showing a comparison of the shape and size of an electrostatic chuck seal in another embodiment of the present application and an electrostatic chuck seal in the prior art.
[0033] It is to be understood that the elements illustrated in the figures are not necessarily drawn to scale. For example, the dimensions of some of the elements can be exaggerated relative to other elements for clarity. Further, where considered appropriate, elements known in the art have been omitted for conciseness. The dimensions of the drawings are not intended to represent the precise dimensions of various elements in the specification.
[0034] BRIEF DESCRIPTION OF DRAWINGS
[0035] 100, 101, 200, 201: electrostatic chuck assembly, 10, 30: electrostatic chuck, 11: ceramic layer, 12: first adhesive layer, 13: electrode layer, 14: heater layer, 15: second adhesive layer, 16: base plate layer, 20, 40, 70, 80: electrostatic chuck seal, 21: main body seal portion, 22: protruding portion, 31: ceramic layer, 32: adhesive layer, 33: spray coating layer, 34: base plate layer, 91: first groove, 92: second groove, 93: groove; 401: radially inner surface, 402: radially outer surface, 403: top surface, 404: bottom surface, 405: chamfer. DETAILED DESCRIPTION
[0036] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described in detail below with reference to the drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the scope of protection of the present application.
[0037] Unless otherwise defined, all technical and scientific terms used in the present application have the same meaning as commonly understood by one of ordinary skill in the art to which the present application belongs; the terms used in the specification of the present application are only for the purpose of describing specific embodiments and are not intended to limit the present application; the terms "include" and "have" and any variations thereof in the specification of the present application are intended to cover non-exclusive inclusion.
[0038] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mount", "connect", "connection" should be understood in a broad sense, for example, can be fixed connection, can also be detachable connection, or integrally connected; can be directly connected, or indirectly connected through an intermediate medium. For those of ordinary skill in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.
[0039] It should be understood that in the present specification, ordinal numbers such as "first", "second", "third" and the like can be used to refer to elements, unless otherwise explicitly stated, which only serve to distinguish different elements, and do not imply that the referred elements must be given in the order of time, space or other aspects.
[0040] First, with reference to Figures 1-5 The electrostatic chuck seal 20 and the electrostatic chuck assembly 100 in one embodiment of the present application are described.
[0041] Figure 1 is a schematic cross-sectional view showing the electrostatic chuck 10 in one embodiment of the present application.Figure 2 is a schematic cross-sectional view showing an electrostatic chuck assembly 100 in one embodiment of the present application. Figure 3 is a schematic cross-sectional view showing an electrostatic chuck seal 20 in one embodiment of the present application.
[0042] As shown in Figures 1-3 , the electrostatic chuck assembly 100 includes an electrostatic chuck 10 and an electrostatic chuck seal 20. The electrostatic chuck 10 has, in order from the top, a ceramic layer 11, a first adhesive layer 12, an electrode layer 13, a heater layer 14, a second adhesive layer 15, and a base plate layer 16.
[0043] The ceramic layer 11, the first adhesive layer 12, the electrode layer 13, the heater layer 14, the second adhesive layer 15, and the base plate layer 16 can be formed using well-known materials.
[0044] In the electrostatic chuck 10, the respective radially outer surfaces of the first adhesive layer 12, the electrode layer 13, the heater layer 14, and the base plate layer 16 are aligned with each other, and an annular first groove 91 is formed radially outward of the radially outer surfaces of the first adhesive layer 12, the electrode layer 13, the heater layer 14, and the base plate layer 16. An annular second groove 92 is formed between the first groove 91 and a radially outer surface of the second adhesive layer 15.
[0045] The first adhesive layer 12 and the second adhesive layer 15 can use any suitable adhesive material, such as a silicone elastomer or a silicone rubber material. The first adhesive layer 12 and the second adhesive layer 15 are generally not fully resistant to plasma or reactive etching chemistry in a processing chamber. In order to protect the first adhesive layer 12 and the second adhesive layer 15, an annular electrostatic chuck seal is generally provided around the annular first adhesive layer 12 and the second adhesive layer 15 to seal against plasma and / or corrosive gas etching from the processing chamber and damaging the adhesive layers.
[0046] In addition, in order to prevent leakage of He gas supplied to the backside of a wafer adsorbed on the electrostatic chuck to the processing chamber, an annular electrostatic chuck seal is also required to be provided around the first adhesive layer 12, the electrode layer 13, the heater layer 14, the second adhesive layer 15, and the base plate layer 16 to seal against plasma and / or corrosive gas etching from the processing chamber and damaging the adhesive layers.
[0047] In the electrostatic chuck 10 of the present embodiment, as shown in Figure 2 , the electrostatic chuck seal 20 is provided around the first adhesive layer 12, the electrode layer 13, the heater layer 14, the second adhesive layer 15, and the base plate layer 16 in a manner to fill the first groove 91 and the second groove 92, and the electrostatic chuck seal 20 is formed as an O-ring.
[0048] As shown in Figure 3As shown in the cross-sectional view, the electrostatic chuck seal 20 includes a ring-shaped main sealing portion 21 for being disposed in the first groove 91 of the electrostatic chuck 10, and a ring-shaped protruding portion 22 protruding from the inner edge of the main sealing portion 21 to the radially inner side for being disposed in the second groove 92 of the electrostatic chuck 10.
[0049] That is, the cross-sectional shape of the electrostatic chuck seal 20 is T-shaped, which can well match the first groove 91 and the second groove 92 of the electrostatic chuck 10.
[0050] Therefore, the electrostatic chuck seal 20 can better seal the electrostatic chuck 10, effectively prevent the plasma from etching the first adhesive layer 12 and the second adhesive layer 15 of the electrostatic chuck 10, and more effectively prevent the He gas supplied to the back side of the wafer from leaking to the processing chamber.
[0051] In order to better seal, in addition to limiting the shape of the electrostatic chuck seal 20 to be T-shaped in cross-section, the size of the electrostatic chuck seal 20 also needs to be designed so that the main sealing portion 21 and the protruding portion 22 can better match the first groove 91 and the second groove 92.
[0052] Specifically, the actual size of the first groove 91 and the second groove 92 of the electrostatic chuck seal 20 can be measured using AB glue (such as epoxy resin glue), and the size of the main sealing portion 21 and the protruding portion 22 of the electrostatic chuck seal 20 is designed based on the actual size.
[0053] The method of measuring the groove size using AB glue can use a well-known method. For example, soft AB glue can be injected into the first groove 91 and the second groove 92 of the electrostatic chuck 10, left for 10 minutes to fix the AB glue, and then the solidified AB glue is taken out for measurement to obtain the shape and size of the first groove 91 and the second groove 92 of the electrostatic chuck 10. The measurement can be taken at multiple positions, and the average value is taken as the measurement result.
[0054] For example, the result (average value) measured using AB glue is that the height (length in the direction perpendicular to the radial direction) of the first groove 91 is 3.23 mm, the width (length in the radial direction) is 0.88 mm, the height of the second groove 92 is 0.97 mm, and the width is 0.70 mm.
[0055] Based on the sizes of the first groove 91 and the second groove 92 measured by the AB glue, the sizes of the main seal portion 21 and the protruding portion 22 of the electrostatic chuck seal 20 of the present embodiment are designed as follows: the height (length in the direction perpendicular to the radial direction) of the main seal portion 21 is 3.23 mm, and the width (length in the radial direction) is 0.88 mm; the height (length in the direction perpendicular to the radial direction) of the protruding portion 22 is 0.83 mm, and the width (length in the radial direction) is 0.66 mm.
[0056] That is, the height and the width of the main seal portion 21 are substantially the same as the height and the width of the first groove 91, respectively, and the height and the width of the protruding portion 22 are smaller than the height and the width of the second groove 92, respectively.
[0057] The sizes of the main seal portion 21 and the protruding portion 22 are thus designed so as to take into account the convenience of installation while satisfying the condition of better sealing performance as much as possible.
[0058] In addition, in order to make the electrostatic chuck seal 20 have better resistance to plasma etching compared with the prior art, it is preferable that the electrostatic chuck seal 20 is formed of a material having stronger plasma resistance. The electrostatic chuck seal 20 may, for example, be formed of a perfluorinated resin.
[0059] The plasma resistance of a material can be represented by the etch rate (also referred to as etching rate) under certain conditions. For example, plasma of a processing gas (e.g., O2 and / or CF4) is generated in a processing chamber under the conditions of a temperature of 100°C, a power of 1200W, a pressure of 50mtorr, and a time of 1 hour to perform plasma processing. The mass of the electrostatic chuck seal 20 is measured before and after the processing, respectively, and the etch rate of the electrostatic chuck seal 20 is calculated. That is, etch rate = (mass before processing - mass after processing) / mass before processing x 100%. The etch rate of the material of the electrostatic chuck seal 20 measured under the above conditions is 4.0% or less, preferably 3.5% or less, more preferably 2.0% or less, and further preferably 1.5% or less. The lower the etch rate, the higher the plasma resistance of the material, and the better the resistance of the electrostatic chuck seal 20 to plasma etching.
[0060] In order to more clearly illustrate the effects of the present embodiment, the following is described in comparison with the prior art.
[0061] Figure 4 is a schematic cross-sectional view showing an electrostatic chuck assembly 101 of the prior art. As shown in Figure 4As shown, the electrostatic chuck assembly 101 differs from the electrostatic chuck assembly 100 only in that the electrostatic chuck seal 20 of the present embodiment is used in the electrostatic chuck assembly 100, while the electrostatic chuck seal 70 of the prior art is used in the electrostatic chuck assembly 101, the electrostatic chuck seal 70 having a substantially rectangular cross section and being provided only in the annular first groove 91 (refer to FIG. 2) without being provided in the annular second groove 92. Figure 1 ) without being provided in the annular second groove 92.
[0062] By making the cross sectional shape of the electrostatic chuck seal 20 a T shape, the electrostatic chuck seal 20 can better match the groove structure of the electrostatic chuck 10 to better seal and effectively prevent plasma from etching the second adhesive layer 15 of the electrostatic chuck 10.
[0063] Figure 5 is a schematic cross sectional view showing a comparison of the shape and size of the electrostatic chuck seal 20 in the present embodiment and the electrostatic chuck seal 70 of the prior art (the units in the figure are mm). The electrostatic chuck seal 20 and the electrostatic chuck seal 70 are seals used in the same electrostatic chuck 10.
[0064] As shown, the size of the main seal portion 21 of the electrostatic chuck seal 20 provided in the first groove 91 is slightly larger than the size of the electrostatic chuck seal 70 provided in the first groove 91. This allows the electrostatic chuck seal 20 to be more tightly inserted into the first groove 91, resulting in better sealing performance. Figure 5
[0065] In addition, the loss ratio of the material of the electrostatic chuck seal 70 measured under the above conditions is 5.0% or more, which is greater than the loss ratio of the material of the electrostatic chuck seal 20 described above. Therefore, the electrostatic chuck seal 20 has better resistance to plasma etching.
[0066] Next, an electrostatic chuck seal 40 and an electrostatic chuck assembly 200 in another embodiment of the present application will be described with reference to Figures 6-10
[0067] Figure 6 is a schematic cross sectional view showing an electrostatic chuck 30 in another embodiment of the present application. Figure 7 is a schematic cross sectional view showing an electrostatic chuck assembly 200 in another embodiment of the present application. Figure 8 is a schematic cross sectional view showing an electrostatic chuck seal 40 in another embodiment of the present application.
[0068] As shown, the electrostatic chuck seal 40 has a substantially rectangular cross section and is provided in the annular first groove 91 (refer to FIG. 2) without being provided in the annular second groove 92. Figures 6-8 As shown, the electrostatic chuck assembly 200 includes an electrostatic chuck 30 and an electrostatic chuck seal 40. The electrostatic chuck 30 has, from top to bottom, a ceramic layer 31, an adhesive layer 32, a sprayed layer 33, and a base plate layer 34.
[0069] The ceramic layer 31, adhesive layer 32, spray coating layer 33 and base plate layer 34 can be formed using well-known materials.
[0070] In the electrostatic chuck 30, the radially outer surfaces of the adhesive layer 32 and the sprayed layer 33 are aligned with each other, and an annular groove 93 is formed on the radially outer side of the radially outer surfaces of the adhesive layer 32 and the sprayed layer 33. The main difference between the electrostatic chuck 30 and the electrostatic chuck 10 in the above-described embodiment is that the electrostatic chuck 30 does not have a heater layer and only has one adhesive layer.
[0071] The material of the adhesive layer 32 is the same as that of the first adhesive layer 12 and the second adhesive layer 15 described above.
[0072] like Figure 7 and Figure 8 As shown, the electrostatic chuck seal 40 is disposed within the groove 93. The electrostatic chuck seal 40 has a generally annular main sealing portion including a radially inner surface 401, a radially outer surface 402, a top surface 403, and a bottom surface 404. The corner formed by the radially inner surface 401 and the top surface 403 has a chamfer 405. The radially outer surface 402 is closer to the radially inner side on the bottom surface 404 side than on the top surface 403 side. The height of the electrostatic chuck seal 40 (length in the direction perpendicular to the radial direction) is equal to the height of the groove 93 (length in the direction perpendicular to the radial direction).
[0073] The electrostatic chuck seal 40 is preferably made of the same material with stronger plasma resistance as the electrostatic chuck seal 20, so that the electrostatic chuck seal 40 has better resistance to plasma etching.
[0074] To more clearly illustrate the effects of this embodiment, it will be described below in comparison with the prior art.
[0075] Figure 9 This is a schematic cross-sectional view showing the electrostatic chuck assembly 201 in the prior art. For example... Figure 9 As shown, the only difference between the electrostatic chuck assembly 201 and the electrostatic chuck assembly 200 is that the electrostatic chuck assembly 200 uses the electrostatic chuck seal 40 of this embodiment, while the electrostatic chuck assembly 201 uses the prior art electrostatic chuck seal 80. The height (length in the direction perpendicular to the radial direction) of the electrostatic chuck seal 80 is less than the height (length in the direction perpendicular to the radial direction) of the groove 93.
[0076] The height of the prior art electrostatic chuck seal 80 is less than the height of the groove 93 of the electrostatic chuck 30, and thus, when a wafer is plasma processed in the processing chamber, plasma leaks to the electrostatic chuck, etching the adhesive layer 32, and causing the adhesive layer 32 to be damaged. In addition, when the adhesive layer 32 is damaged, He gas supplied to the back surface of the wafer leaks and affects the temperature of the wafer, and thus, etching rate, device performance, etc. can be changed.
[0077] Figure 10 is a schematic cross-sectional view showing a comparison of the shape and size of the electrostatic chuck seal 40 in another embodiment of the present application and the electrostatic chuck seal 80 in the prior art (the units in the drawing are mm). The electrostatic chuck seal 40 and the electrostatic chuck seal 80 are seals used in the same electrostatic chuck 30.
[0078] As shown in Figure 10 , the electrostatic chuck seal 40 of the present embodiment is improved with respect to the electrostatic chuck seal 80 of the prior art in the following aspects.
[0079] (1) The inner diameter of the electrostatic chuck seal is optimized, and the inner diameter of the electrostatic chuck seal 40 is made closer to the diameter of the sealing portion of the electrostatic chuck 30. In this way, it is possible to prevent the electrostatic chuck seal from being stretched after installation due to a significant difference between the inner diameter of the electrostatic chuck seal and the diameter of the electrostatic chuck. When the electrostatic chuck seal is stretched, the thickness of the electrostatic chuck seal becomes thin, and the protection of the electrostatic chuck becomes weak.
[0080] (2) The corner portion formed by the radial inner surface 401 and the top surface 403 has a chamfer 405 (see Figure 8 ). In this way, it is possible to make the electrostatic chuck seal 40 easier to install.
[0081] (3) The thickness of the electrostatic chuck seal 40 is increased, and the radial outer surface 402 is made closer to the radial inner side on the side of the bottom surface 404 than on the side of the top surface 403 (see Figure 8 ), that is, the thickness of the upper end side of the electrostatic chuck seal 40 corresponding to the adhesive layer 32 of the electrostatic chuck 30 is thicker. In this way, the electrostatic chuck seal 40 can better cover the groove 93 of the electrostatic chuck 30, and the adhesive layer 32 can be better protected from plasma etching.
[0082] (4) The height of the electrostatic chuck seal 40 is increased, and the height (length in the direction perpendicular to the radial direction) of the electrostatic chuck seal 40 is made equal to the height (length in the direction perpendicular to the radial direction) of the groove 93. In this way, the electrostatic chuck seal 40 can completely match the groove 93 of the electrostatic chuck 30, and the electrostatic chuck seal 40 can fill the groove 93 of the electrostatic chuck 30.
[0083] As described above, in another embodiment of the present application, by changing the shape and size of the electrostatic chuck seal 40, the electrostatic chuck seal 40 can be completely matched with the groove 93 of the electrostatic chuck 30, the adhesion layer 32 of the plasma etching electrostatic chuck 30 can be effectively prevented, and the electrostatic chuck seal 40 can be easily installed by forming the chamfer 405.
[0084] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit them; although the present application has been described in detail with reference to the above embodiments, those skilled in the art should understand that the technical solutions recorded in the above embodiments can still be modified, or some technical features can be replaced by equivalents, but these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.
Claims
1. An electrostatic chuck seal for sealing an electrostatic chuck having, from top to bottom, a ceramic layer, a first adhesive layer, an electrode layer, a heater layer, a second adhesive layer, and a base plate layer. The first adhesive layer, the electrode layer, the heater layer, and the base plate layer of the electrostatic chuck are each aligned with their respective radial outer surfaces, and an annular first groove is formed on the radial outer side of the radial outer surfaces of the first adhesive layer, the electrode layer, the heater layer, and the base plate layer. An annular second groove is formed between the first groove and the radial outer surface of the second adhesive layer. The electrostatic chuck seal is formed as an O-ring. The electrostatic chuck seal is characterized by comprising: An annular main sealing portion is provided within the first groove; and An annular protrusion that protrudes radially inward from the inner edge of the main sealing portion is used to be disposed within the second groove.
2. The electrostatic chuck seal as described in claim 1, characterized in that: The electrostatic chuck seal has a T-shaped cross-section.
3. The electrostatic chuck seal as described in claim 1, characterized in that: The radial length and the length in the direction perpendicular to the radial direction of the protrusion are respectively less than the radial length and the length in the direction perpendicular to the radial direction of the second groove.
4. The electrostatic chuck seal as described in claim 1, characterized in that: The electrostatic chuck seal is formed of a plasma-resistant material.
5. The electrostatic chuck seal as described in claim 4, characterized in that: The plasma-resistant material is a perfluoropolymer.
6. The electrostatic chuck seal as described in claim 4, characterized in that: The plasma-resistant material, when subjected to plasma treatment at 100°C, 1200W, 50mtorr, and 1 hour, showed a loss ratio of less than 4.0%.
7. An electrostatic chuck seal for sealing an electrostatic chuck having, from top to bottom, a ceramic layer, an adhesive layer, a sprayed layer, and a base plate layer. The adhesive layer and the sprayed coating of the electrostatic chuck are aligned with each other on their respective radially outer surfaces, forming an annular groove on the radially outer side of the adhesive layer and the sprayed coating. The electrostatic chuck seal is formed as an O-ring and is disposed within the groove. The electrostatic chuck seal is characterized in that: The electrostatic chuck seal has a generally annular main sealing portion comprising a radially inner surface, a radially outer surface, a top surface, and a bottom surface. The corner formed by the radial inner surface and the top surface has a chamfer. The radially outer surface of the electrostatic chuck seal is closer to the radially inner side on the bottom surface side than on the top surface side. The length of the electrostatic chuck seal in the direction perpendicular to the radial direction is equal to the length of the groove in the direction perpendicular to the radial direction.
8. The electrostatic chuck seal as described in claim 7, characterized in that: The electrostatic chuck seal is formed of a plasma-resistant material.
9. An electrostatic chuck assembly, characterized in that, include: An electrostatic chuck has, from top to bottom, a ceramic layer, a first adhesive layer, an electrode layer, a heater layer, a second adhesive layer, and a base plate layer. The radial outer surfaces of the first adhesive layer, the electrode layer, the heater layer, and the base plate layer are aligned with each other, and an annular first groove is formed on the radial outer side of the radial outer surfaces of the first adhesive layer, the electrode layer, the heater layer, and the base plate layer. An annular second groove is formed between the first groove and the radial outer surface of the second adhesive layer. and The electrostatic chuck seal according to any one of claims 1 to 6.
10. An electrostatic chuck assembly, characterized in that, include: An electrostatic chuck has, from top to bottom, a ceramic layer, an adhesive layer, a sprayed layer, and a base plate layer. The radial outer surfaces of the adhesive layer and the sprayed layer are aligned with each other, and an annular groove is formed on the radial outer side of the radial outer surfaces of the adhesive layer and the sprayed layer. The electrostatic chuck seal as described in any one of claims 7 to 8.