Optical waveguide device based on glass substrate

Abstract

The invention belongs to the technical field of semiconductor devices, and particularly relates to an optical waveguide device based on a glass substrate, which comprises the glass substrate and a transition layer, an X silicon-based waveguide layer is arranged on the first surface of the transition layer, a heterogeneous material chip layer is integrated on the X silicon-based waveguide layer, the first surface of the X silicon-based waveguide layer is coated with a protective layer, and the protective layer is arranged on the first surface of the transition layer. The protective layer covers the glass substrate, the X silicon-based waveguide layer and the heterogeneous material chip layer at the same time; wherein the transition layer comprises an X element which is the same as that of the X silicon-based waveguide layer, through the above structure, the optical waveguide device with multiple layers of transition function areas is provided, the problems that the surface roughness of a large glass substrate is high, and the warping possibility is higher due to size effect amplification can be solved, and the optical waveguide device is suitable for large glass substrates. On the premise of fully utilizing the advantages of low cost and high performance of the glass substrate, the design of a large-size optical waveguide device for inhibiting packaging warping is realized.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of semiconductor devices, and particularly relates to a glass substrate-based optical waveguide device. BACKGROUND

[0002] As a core and basic element of modern optical communication, optical sensing and photonic integrated chip (PIC), the performance and reliability of the optical waveguide device directly determine the pros and cons of the entire optical system. In recent years, with the rapid development of data center interconnection, high-performance computing and artificial intelligence, higher requirements have been put forward for the transmission capacity, integration density and physical size of the optical waveguide device.

[0003] At present, the substrate material used for preparing the optical waveguide device in the industry is mostly silicon substrate (such as SOI-Silicon on Insulator). The silicon substrate has the advantages of high surface flatness, good compatibility with CMOS process, easy micro-nano processing, etc., so it has become the mainstream choice for high-performance and high-integration optical waveguide. However, the silicon substrate also has its inherent limitations: for example, the silicon material itself has high absorption loss in the communication band, and its high refractive index, although conducive to device miniaturization, also brings higher transmission loss and packaging alignment difficulty.

[0004] Therefore, people think of using glass as a substrate to reduce the packaging difficulty of the chip and improve the performance of the chip. For example, the prior art CN119028829A proposes a glass substrate structure and a preparation method thereof. The application uses a glass substrate as a packaging substrate, and uses the characteristics of adjustable glass substrate size, adjustable thermal expansion coefficient and low dielectric loss factor to realize smaller size packaging, reduce the risk of connection warping between the packaging substrate and the chip, and improve the dielectric performance of the packaging, thereby reducing the processing difficulty and cost. That is, the application provides a small-size glass substrate packaging scheme.

[0005] However, for some application scenarios that require long transmission distance or large-area optical field operation (such as large optical phased arrays, some types of biological sensors, etc.), it is necessary to realize the preparation of large-size optical waveguide devices on a single large-size glass substrate. Therefore, how to realize the manufacturing of large-size optical waveguide devices that suppress packaging warping while fully utilizing the low-cost and high-performance advantages of glass substrates is still a key technical problem to be solved in the field. SUMMARY

[0006] The purpose of the present application is to provide a glass substrate-based optical waveguide device to partially alleviate or solve the above problems and realize the manufacturing of large-size optical waveguide devices that suppress packaging warping.

[0007] To solve the above-mentioned technical problems, the present application specifically adopts the following technical solutions: A glass substrate-based optical waveguide device comprises: A glass substrate; A first surface of the glass substrate is provided with a transition layer, a first surface of the transition layer is provided with an X-silicon-based waveguide layer, a heteromaterial chip layer is integrated on the X-silicon-based waveguide layer, a first surface of the X-silicon-based waveguide layer is coated with a protective layer, and the protective layer covers the glass substrate, the X-silicon-based waveguide layer and the heteromaterial chip layer at the same time; wherein the transition layer contains the same X element as the X-silicon-based waveguide layer; A first boundary layer is formed between the glass substrate and the transition layer, and a second boundary layer is formed between the transition layer and the X-silicon-based waveguide layer; The first boundary layer comprises at least one first interface control structure, and the first interface control structure comprises at least one of a microcavity structure, a crack structure and a sodium ion layer; the second boundary layer comprises at least one second interface control structure, and the second interface control structure comprises at least one of a crack structure and a hole structure.

[0008] As an improvement, the transition layer is an X-silicon compound transition layer.

[0009] As an improvement, the X-silicon compound transition layer is divided into a first sublayer, a second sublayer and a third sublayer from bottom to top, and the proportion of X elements in the first sublayer, the second sublayer and the third sublayer gradually increases.

[0010] As an improvement, the refractive index of the first sublayer is 1.45-1.5, the refractive index of the second sublayer is 1.6-1.7, and the refractive index of the third sublayer is 1.8-1.9.

[0011] As an improvement, the X-silicon-based waveguide layer is a silicon nitride waveguide layer, and the transition layer comprises at least one layer of silicon nitride transition layer and at least one layer of silicon oxide transition layer which are alternately stacked, wherein the side close to the glass substrate is a silicon oxide transition layer, and the side close to the silicon nitride waveguide layer is a silicon nitride transition layer.

[0012] As an improvement, the thickness of the glass substrate is 300 um -1mm, the thickness of the transition layer is 50 nm-200nm, and the thickness of the X-silicon-based waveguide layer is 300nm-400nm.

[0013] As an improvement, the heteromaterial chip layer is at least one of a photodetector, a laser diode, vanadium oxide and a phase change material germanium-antimony-tellurium alloy.

[0014] As an improvement, the thickness of the first sub-layer, the second sub-layer and the third sub-layer is 50 nm respectively.

[0015] As an improvement, a substrate contact layer is further arranged between the transition layer and the glass substrate, and the thickness of the substrate contact layer is 5 nm-50 nm.

[0016] As an improvement, the thickness of the first boundary layer is 10 nm-50 nm, and the thickness of the second boundary layer is 10 nm-100 nm.

[0017] The principle and beneficial technical effects of the present application are that: For the preparation of a super-large size optical waveguide device on a single chip, the present application greatly suppresses the structural warping tendency caused by the enlargement of the substrate size and the material surface characteristics through the stress regulation of the key interface and the unique multi-layer structure design.

[0018] Specifically, for the core problems of high surface roughness of a large-size glass substrate and large mismatch of the thermal expansion coefficient (CTE) of the silicon-based waveguide layer, a transition layer containing the same X element and a boundary layer structure with a specific thickness are designed, that is, a scheme of limiting and coordinating the thickness and structure of the transition layer and the boundary layer is provided, and the stress gradient transition and buffer release are effectively realized.

[0019] Firstly, the transition layer relieves the problem of low adhesion between the glass substrate and the waveguide layer caused by material differences, and secondly, the first boundary layer between the transition layer and the glass substrate and the second boundary layer between the transition layer and the waveguide layer strengthen the connection strength between the transition layer and the adjacent components, which can further reduce the possibility of warping. In other words, contrary to the idea of pursuing an ideal complete interface in the prior art (in the prior art, in order to ensure the connection strength between adjacent components, such as the substrate and the waveguide layer, the upper surface of the substrate and the lower surface of the waveguide layer are required to be directly adhered as much as possible), the present application introduces a transition layer and a boundary layer with a specific thickness and structure between the glass substrate and the waveguide layer, and at the same time, microcavities, cracks or sodium ion layers and other micro-nano structures are formed in the boundary layer, which can absorb and release part of the stress to a certain extent, thereby inhibiting the overall warping amplitude to a certain extent.

[0020] Further, for the design of different optical waveguide devices, a transition layer optional scheme is provided, especially when using a gradient refractive index silicon oxynitride (SiON) or a multi-layer alternating stack structure, the packaging warping, cracking and delamination problems caused by thermal processes and size effects can be significantly inhibited, which lays a foundation for realizing large-area and high-performance optical waveguide devices.

[0021] Further, the setting of the transition layer (such as the SiON gradient layer or the SiO2 / Si3N4 stack) reduces the refractive index jump between the glass substrate and the X-silicon-based waveguide layer, reduces the mode mismatch and scattering loss of the optical waveguide, and improves the transmission efficiency of the optical signal. At the same time, the transition layer and / or the base contact layer also play a role in smoothing the rough glass surface, improving the film quality of the upper layer (waveguide) film.

[0022] In summary, the present application takes full advantage of the glass substrate (low cost, low loss, large size) while overcoming its inherent shortcomings through innovative transition layer and interface design, providing a high-performance, large-size optical waveguide device solution that can replace traditional silicon substrate solutions, especially suitable for optical phased array, biosensing and other applications that require long transmission distance or large-area optical field operation. BRIEF DESCRIPTION OF DRAWINGS

[0023] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or prior art description. In all the drawings, similar elements or parts are generally identified by similar reference numerals. In the drawings, each element or part is not necessarily drawn according to the actual proportion. Obviously, the drawings described below are some embodiments of the present application, and those skilled in the art can obtain other drawings according to these drawings without creative labor.

[0024] Figure 1 FIG. 1 is a first structural schematic diagram of an optical waveguide device in an exemplary embodiment of the present application; Figure 2 FIG. 2 is a second structural schematic diagram of an optical waveguide device in an exemplary embodiment of the present application; Figure 3 FIG. 3 is a third structural schematic diagram of an optical waveguide device in an exemplary embodiment of the present application; Figure 4 FIG. 4 is a fourth structural schematic diagram of an optical waveguide device in an exemplary embodiment of the present application; Figure 5 FIG. 5 is a fifth structural schematic diagram of an optical waveguide device in an exemplary embodiment of the present application.

[0025] Marked in the figure: 100, glass substrate; 200, transition layer; 201, first sublayer; 202, second sublayer; 203, third sublayer; 211, silicon nitride transition layer; 212, silicon oxide transition layer; 300, X-silicon-based waveguide layer; 500, protective layer; 600, first boundary layer; 700, second boundary layer; 800, base contact layer. DETAILED DESCRIPTION

[0026] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0027] In this document, suffixes such as "module," "component," or "unit" used to denote elements are used solely for the purpose of illustrative purposes and have no specific meaning in themselves. Therefore, "module," "component," or "unit" may be used interchangeably. In this document, terms such as "upper," "lower," "inner," "outer," "front," "rear," "one end," and "the other end," indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0028] In this document, unless otherwise explicitly specified and limited, the terms "installed," "equipped with," and "connected," etc., should be interpreted broadly. For example, "connected" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, a direct connection, or an indirect connection through an intermediate medium; it can be a connection within two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances. In this document, "multiple" means two or more, that is, it includes two, three, four, five, etc.

[0029] In this paper, the X-based silicon waveguide layer refers to a waveguide layer composed of a compound formed from silicon (Si) and one or more X elements, wherein the X element is selected from one or more elements such as nitrogen (N), carbon (C), and oxygen (O). The X-based silicon waveguide layer includes, but is not limited to: silicon nitride (SiN) layer, silicon oxide (SiO2), silicon carbide (SiC), or any combination or mixture thereof.

[0030] In this paper, the X silicon compound transition layer refers to a silicon compound layer containing the same X element (i.e., X is selected from non-metallic elements such as nitrogen (N), carbon (C), and oxygen (O)) as the X silicon-based waveguide layer, used to achieve a gradient transition from the glass substrate to the waveguide core layer. For example, when the X silicon-based waveguide layer is a silicon nitride (Si3N4, i.e., X is N) layer, the X silicon compound transition layer can be a silicon oxynitride (SiON) layer.

[0031] Example 1 Large-size glass substrates typically range in size from 100mm² to 2000mm², or even larger. Compared to commonly used silicon wafers, glass panels have lower surface flatness due to their roughness. Furthermore, the significant difference in thermal expansion coefficients between glass and waveguide layers (such as silicon nitride (Si3N4) waveguides) makes them more prone to localized cracking, warping, and film delamination. Based on this, see [reference needed]. Figures 1-5 This application addresses the design requirements of large-size optical waveguide devices by providing an anti-warping optical waveguide device based on a glass substrate 100, comprising: A glass substrate 100; a transition layer 200 is disposed on a first surface of the glass substrate 100, an X-based silicon waveguide layer 300 is disposed on the first surface of the transition layer 200, a heterogeneous material chip layer is integrated on the X-based silicon waveguide layer 300, and a protective layer 500 is covered on the first surface of the X-based silicon waveguide layer 300, the protective layer 500 simultaneously covering the glass substrate 100, the X-based silicon waveguide layer 300 and the heterogeneous material chip layer; wherein, the transition layer 200 contains the same X element as the X-based silicon waveguide layer 300.

[0032] In other words, the X silicon-based waveguide layer 300 and the glass substrate 100, and the heterogeneous material chip layer and the X silicon-based waveguide layer 300 are not completely corresponding, that is, the three are not exactly the same size, and they only partially overlap. During the process of covering them, the protective layer 500 covers the first surface (i.e. the upper surface) of the three at the same time to achieve protection.

[0033] A first boundary layer 600 is formed between the glass substrate 100 and the transition layer 200, and a second boundary layer 700 is formed between the transition layer 200 and the silicon-based waveguide layer 300.

[0034] The first boundary layer 600 includes at least one first interface control structure, which includes at least one of a microcavity structure, a crack structure, and a sodium ion layer; the second boundary layer 700 includes at least one second interface control structure, which includes at least one of a crack structure and a pore structure. In some embodiments, the thickness of the first boundary layer 600 is 10 nm-50 nm, and the thickness of the second boundary layer 700 is 10 nm-100 nm. Here, "microcavity structure" refers to a closed or semi-closed cavity formed within the first boundary layer, with a scale from nanometer to submicrometer, such as a cavity formed by a bubble structure; "sodium ion layer" refers to a layer of sodium ions (Na+) in the glass substrate within the first boundary layer region. +A thin film of sodium ions is formed by the outward migration and enrichment of sodium ions; "crack structure" refers to a microscopic fracture morphology with a certain length and width formed in the first boundary layer and / or the second boundary layer. These structures are usually linear or network-like; "pore structure" refers to a microscopic cavity or pore with a certain size formed in the second boundary layer. These structures are usually circular or irregular in shape.

[0035] First, this application adjusts the structural and property differences between the X-silicon waveguide layer 300 and the glass substrate 100 through a transition layer. Then, by limiting the structure and thickness of the two boundary layers and leveraging the characteristics of the interface control structure itself, the connections between the X-silicon waveguide layer 300 and the glass substrate 100, as well as between the heterogeneous material chip layer and the X-silicon waveguide layer 300, are strengthened, further enhancing the connection strength between the transition layer 200 and its adjacent structures (glass substrate 100 and X-silicon waveguide layer 300). In other words, this application comprehensively provides a transition layer with a reinforced structure through the synergistic effect of the transition layer and boundary layers, ensuring the connection strength between the X-silicon waveguide layer 300 and the glass substrate 100 while facilitating the transition.

[0036] In other embodiments, the waveguide layer may also be made of other materials, such as Si (silicon), LiNbO3 (lithium tantalate), chalcogenide glass (e.g., As2S3, As2Se3, Ge–Sb–S / Se), polymers (SU-8, PMMA, BCB, electro-optic polymers, etc.), AlN (aluminum nitride), graphene, and other two-dimensional materials (MoS2, WS2, etc.). In other words, in some embodiments, the waveguide layer may also be a waveguide other than the X silicon-based waveguide layer, that is, a waveguide that does not contain the X element. Specifically, in this embodiment, the present invention provides an anti-warping optical waveguide device based on a glass substrate 100, including: a glass substrate 100; a transition layer 200 is disposed on the first surface of the glass substrate 100, an optical waveguide layer is disposed on the first surface of the transition layer 200, a heterogeneous material chip layer is integrated on the optical waveguide layer, and a protective layer 500 is covered on the first surface of the optical waveguide layer, the protective layer 500 simultaneously covering the glass substrate 100, the optical waveguide layer and the heterogeneous material chip layer.

[0037] In some embodiments, the X silicon compound transition layer is divided from bottom to top into a first sublayer 201, a second sublayer 202, and a third sublayer 203 (see details). Figure 2The proportion of the X element in the first sublayer 201, the second sublayer 202, and the third sublayer 203 gradually increases. In some specific embodiments, the refractive index of the first sublayer 201 is 1.45-1.5, the refractive index of the second sublayer 202 is 1.6-1.7, and the refractive index of the third sublayer 203 is 1.8-1.9.

[0038] As an example, the X-based silicon waveguide layer 300 is a silicon nitride waveguide layer, and the transition layer 200 is a graded silicon oxynitride transition layer. The graded nature means that the nitrogen-oxygen ratio gradually increases in the first sub-layer 201, the second sub-layer 202, and the third sub-layer 203, thereby causing the transition layer 200 to gradually transition from being similar to the elements of the glass substrate 100 to being similar to the elements of the waveguide layer. This allows it to simultaneously provide "flattening" and "stress buffering" effects over a large area. Preferably, the refractive index and stress of the first sub-layer 201 are close to SiO2 (high oxygen, low nitrogen), the oxygen-nitrogen ratio of the second sub-layer 202 is close to 1:1, and the refractive index and stress of the third sub-layer 203 are close to Si3N4 (low oxygen, high nitrogen).

[0039] It should be noted that the silicon oxynitride transition layer in this application is not silicon oxynitride in the traditional sense, but a combination of silicon compounds containing nitrogen and oxygen elements. That is, the nitrogen-oxygen ratio in the compound may not be 1:1 in the traditional sense.

[0040] In other embodiments, the X-based silicon waveguide layer 300 is a silicon nitride waveguide layer, and the transition layer is a single-layer silicon oxynitride transition layer. Its process is simple and it is especially suitable for conventional silicon nitride photonic devices with non-extreme thermal stress requirements; or for low-stress designs with single-layer silicon nitride waveguides or silicon nitride thickness <300 nm.

[0041] In some other embodiments, the X-based silicon waveguide layer 300 is a silicon nitride waveguide layer, and the transition layer 200 includes at least one silicon nitride transition layer 211 and at least one silicon oxide transition layer 212 alternately stacked, wherein the silicon oxide transition layer 212 is located near the glass substrate 100, and the silicon nitride transition layer 211 is located near the silicon nitride waveguide layer. (See the example of a two-layer structure for details.) Figure 3The diagram illustrates the arrangement of the silicon nitride transition layer 211 and the silicon oxide transition layer 212. Of course, multiple layers can be stacked between the silicon nitride transition layer 211 and the silicon oxide transition layer 212. For example, an additional silicon oxide transition layer 212 and a silicon nitride transition layer 211 can be added between the silicon nitride transition layer 211 and the silicon oxide transition layer 212. The specific number of layers can be adaptively adjusted according to the actual optical waveguide device and other factors, all of which are within the scope of protection of this application. Transition layers with the above structure are particularly suitable for nonlinear optical devices requiring high power and low loss; stress-sensitive structures in microcavity and narrow-linewidth lasers; and composite structures such as multimode interference and filters.

[0042] In other words, by setting a transition layer 200 and specifically selecting the material of the transition layer 200, this application can buffer the glass substrate 100 and the waveguide layer with large differences in properties, thereby reducing interface reflection, improving mode coupling efficiency, and reducing cracks caused by mismatch in thermal expansion coefficients.

[0043] In some embodiments, the thickness of the glass substrate 100 is 300 μm - 1 mm, the thickness of the transition layer 200 is 50 nm - 200 nm, and the thickness of the X-based silicon waveguide layer 300 is 300 nm - 400 nm.

[0044] In some embodiments, when the transition layer 200 is a gradient silicon oxynitride transition layer, the thicknesses of the first sublayer 201, the second sublayer 202, and the third sublayer 203 are each 50 nm.

[0045] In some embodiments, the heterogeneous material chip layer is at least one of a photodetector (PD), a laser diode (LD), vanadium oxide (VO2), and a phase change material germanium-antimony-tellurium alloy (GST). The heterogeneous material chip layer can be integrated onto the X-based silicon waveguide layer 300 or the transition layer 200 using existing microtransfer printing or wafer bonding processes, which will not be elaborated further here.

[0046] In some embodiments, a substrate contact layer 800 is further provided between the transition layer 200 and the glass substrate 100, and the thickness of the substrate contact layer 800 is 5 nm–50 nm.

[0047] In some embodiments, the substrate contact layer 800 is a silicon oxide layer. By providing the substrate contact layer 800, the rough surface of the glass substrate 100, or the unevenness caused by the large area span of a large glass substrate, can be smoothed. In other words, the surface of the glass substrate 100 is interface-optimized by the substrate contact layer 800, improving its flatness and thus enhancing its bonding with the waveguide layer. In this embodiment, the first boundary layer 600 is (directly) located between the substrate contact layer 800 and the transition layer 200. It should be noted that the first boundary layer 600 is still (indirectly) located between the glass substrate 100 and the transition layer 200.

[0048] In summary, this application provides an optical waveguide device with multi-layer transition functional regions, which can address the problems of high surface roughness of the large glass substrate 100 and a higher probability of warping due to size effect amplification. While fully utilizing the low cost and high performance advantages of the glass substrate 100, it enables the manufacturing of large-size optical waveguide devices that suppress package warping.

[0049] Specifically, this application uses a transition layer 200 with a single or multiple layers to work with a boundary layer. On the one hand, this can address the problem of poor adhesion between the glass substrate 100 and the waveguide layer caused by the large difference in materials. On the other hand, by limiting the thickness and structure of the boundary layer, it can avoid the problem of stress accumulation.

[0050] Example 2 This embodiment provides an anti-warping optical waveguide device based on a glass substrate. Unlike Embodiment 1, the substrate in this embodiment includes, but is not limited to, a glass substrate. Specifically, the optical waveguide device includes: A substrate; a transition layer 200 is disposed on the first surface of the substrate, an X-based silicon waveguide layer 300 is disposed on the first surface of the transition layer 200, a heterogeneous material chip layer is integrated on the X-based silicon waveguide layer 300, and a protective layer 500 is covered on the first surface of the X-based silicon waveguide layer 300, the protective layer 500 simultaneously covering the substrate, the X-based silicon waveguide layer 300 and the heterogeneous material chip layer; wherein, the transition layer 200 contains the same X element as the X-based silicon waveguide layer 300.

[0051] In some embodiments, the substrate may be one of a sapphire substrate (single-crystal alumina, Al2O3), an aluminum nitride substrate, or a polymer substrate.

[0052] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0053] The embodiments of the present invention have been described above with reference to the accompanying drawings. However, the present invention is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of the present invention without departing from the spirit and scope of the claims. All of these forms are within the protection scope of the present invention.

Claims

1. An optical waveguide device based on a glass substrate, characterized in that, include: Glass substrate (100); A transition layer (200) is disposed on the first surface of the glass substrate (100), and an X-based silicon waveguide layer (300) is disposed on the first surface of the transition layer (200). A heterogeneous material chip layer is integrated on the X-based silicon waveguide layer (300), and a protective layer (500) is covered on the first surface of the X-based silicon waveguide layer (300). The protective layer (500) simultaneously covers the glass substrate (100), the X-based silicon waveguide layer (300), and the heterogeneous material chip layer. The transition layer (200) contains the same X element as the X-based silicon waveguide layer (300). A first boundary layer (600) is formed between the glass substrate (100) and the transition layer (200), and a second boundary layer (700) is formed between the transition layer (200) and the X-based silicon waveguide layer (300). The first boundary layer (600) includes at least one first interface control structure, which includes at least one of a microcavity structure, a crack structure, and a sodium ion layer; the second boundary layer (700) includes at least one second interface control structure, which includes at least one of a crack structure and a pore structure.

2. The optical waveguide device based on a glass substrate according to claim 1, characterized in that, The transition layer (200) is an X silicon compound transition layer.

3. The optical waveguide device based on a glass substrate according to claim 2, characterized in that, The X silicon compound transition layer is divided into a first sublayer (201), a second sublayer (202), and a third sublayer (203) from bottom to top, and the proportion of X element in the first sublayer (201), the second sublayer (202), and the third sublayer (203) gradually increases.

4. The optical waveguide device based on a glass substrate according to claim 3, characterized in that, The first sublayer (201) has a refractive index of 1.45-1.5, the second sublayer (202) has a refractive index of 1.6-1.7, and the third sublayer (203) has a refractive index of 1.8-1.

9.

5. The optical waveguide device based on a glass substrate according to claim 1, characterized in that, The X-based silicon waveguide layer (300) is a silicon nitride waveguide layer, and the transition layer (200) includes at least one silicon nitride transition layer (211) and at least one silicon oxide transition layer (212) stacked alternately, wherein the side closer to the glass substrate (100) is the silicon oxide transition layer (212), and the side closer to the silicon nitride waveguide layer is the silicon nitride transition layer (211).

6. The optical waveguide device based on a glass substrate according to any one of claims 1-5, characterized in that, The thickness of the glass substrate (100) is 300 μm - 1 mm, the thickness of the transition layer (200) is 50 nm - 200 nm, and the thickness of the X silicon-based waveguide layer (300) is 300 nm - 400 nm.

7. The optical waveguide device based on a glass substrate according to claim 1, characterized in that, The heterogeneous material chip layer is at least one of photodetector, laser diode, vanadium oxide, and phase change material germanium-antimony-tellurium alloy.

8. The optical waveguide device based on a glass substrate according to claim 3, characterized in that, The thicknesses of the first sublayer (201), the second sublayer (202), and the third sublayer (203) are 50 nm.

9. The optical waveguide device based on a glass substrate according to claim 1, characterized in that, A substrate contact layer (800) is further provided between the transition layer (200) and the glass substrate (100), and the thickness of the substrate contact layer (800) is 5nm-50nm.

10. The optical waveguide device based on a glass substrate according to claim 1, characterized in that, The thickness of the first boundary layer (600) is 10nm-50nm, and the thickness of the second boundary layer (700) is 10nm-100nm.

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