Method and device for generating magnesium ion beam in ion implanter

Abstract

The invention discloses a method and device for generating a magnesium ion beam in an ion implanter, and relates to the technical field of semiconductor manufacturing, and the method comprises the following steps: heating a solid-state source containing magnesium iodide to form steam containing magnesium iodide; conveying the steam containing magnesium iodide into an ion source arc chamber; the steam entering the ion source arc chamber is ionized to form plasma containing Mg < + >; mg < + > in the plasma is led out to form a milliampere-level magnesium ion beam; the magnesium iodide-containing solid source is completely composed of magnesium iodide or a mixture of magnesium iodide and a magnesium simple substance. According to the method provided by the invention, milliampere-magnitude magnesium beams can be generated, and injection use can be met; the magnesium iodide and the magnesium elementary substance are mixed to be used as a solid-state source, so that the magnesium ion beam can be improved, the service time of the ion source is prolonged, and the maintenance frequency is reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, and more particularly to a method for generating a magnesium ion beam in an ion implanter. BACKGROUND

[0002] The integrated circuit industry is developing rapidly, and gallium nitride devices have become an important direction for the development of the electronic industry due to their high efficiency, high power density, small size, and high temperature resistance.

[0003] Unlike silicon carbide (SiC) devices, which require modification by implanting N / B / P / Al ions, the performance of gallium nitride electronic devices depends on the implantation of Si ions and Mg ions. In particular, the preparation of P-type gallium nitride devices requires high-dose magnesium ion implantation, which imposes strict requirements on the beam intensity, stability, and purity of the magnesium ion source in the ion implanter.

[0004] For magnesium ion sources, the commonly used ion sources include liquid metal ion sources, vacuum arc ion sources, and IHC inter-heated cathode ion sources.

[0005] Liquid metal ion sources use the principle of field emission of liquid metal under the action of a strong electric field. Under the action of an electric field, nanoscale droplets are formed on the surface of the liquid metal. These droplets form elongated Taylor cones under the stretching force of the electric field. When the electric field intensity reaches a certain threshold, field emission occurs at the tip of the Taylor cone, and an ion beam is formed. Although this type of ion source can produce nanoscale beam spots of magnesium ions, the beam intensity is only in the microampere range. The microampere-level nanoscale beam is not compatible with the beamline optical path of existing ion implanters, and cannot meet the high-dose implantation requirements of gallium nitride devices.

[0006] Vacuum arc ion sources can produce magnesium metal ions. Vacuum arc ion sources are commonly used in vacuum deposition thin film equipment and are based on the principle of cold field-induced arc discharge. The cathode arc spot current density of the vacuum arc ion source during discharge reaches 10 12 A / m 2 orders of magnitude, and the evaporation process is intense. In addition to emitting electrons, ions, and a small amount of neutral atoms, there is also the spewing of macroscopic molten metal particles, which are relatively large in size. Due to the presence of large droplets, the uniformity of the extracted beam is affected, and the contamination of large particle ions cannot meet the requirements of magnesium ion implantation.

[0007] IHC inter-heated cathode ion sources ionize the working gas by emitting electrons from the cathode to produce plasma, but the melting point of magnesium metal is around 640°. The discharge temperature inside the IHC inter-heated cathode source arc chamber will cause the magnesium metal to melt, so it cannot use the method of sputtering single metal elements to produce a stable magnesium ion beam.

[0008] In summary, the existing magnesium ion source technologies all have defects such as insufficient beam intensity, poor beam uniformity, or low stability, and are difficult to meet the requirements of high dose, high purity, and high stability of magnesium ion implantation for P-type gallium nitride devices, and therefore, it is necessary to provide a new method for generating a magnesium ion beam in an ion implanter. SUMMARY

[0009] Therefore, the present application aims to provide a new method for generating a magnesium ion beam in an ion implanter to solve the problems in the prior art.

[0010] To achieve the above-mentioned purpose, the technical solutions of the present application are as follows: In a first aspect, the present application provides a method for generating a magnesium ion beam in an ion implanter, comprising the following steps: heating a solid-state source containing magnesium iodide to form a vapor containing magnesium iodide; transporting the vapor containing magnesium iodide into an ion source arc chamber; ionizing the vapor entering the ion source arc chamber to form a plasma containing Mg + ; extracting Mg + from the plasma to form a milliamper-level magnesium ion beam.

[0011] Further, the solid-state source containing magnesium iodide is entirely composed of magnesium iodide.

[0012] Further, the solid-state source containing magnesium iodide is a mixture of magnesium iodide and magnesium single substance.

[0013] Further, the mass proportion of the magnesium single substance in the mixture ranges from 0 to 50%, and is not 0.

[0014] Further, the solid-state source containing magnesium iodide is placed in a crucible for heating, and the interior of the crucible is subjected to vacuumization treatment.

[0015] Further, the interior of the crucible is vacuumized to below 1mtorr, and the crucible is heated to a temperature above 500℃, so that the solid-state source in the crucible sublimates to form a vapor containing magnesium iodide.

[0016] Further, the solid-state source is in any one or a mixture of powder, block, or granular form.

[0017] In a second aspect, the present application provides a device for generating a magnesium ion beam in an ion implanter, comprising: a solid-state source comprising magnesium iodide in solid form, or a mixture of magnesium iodide in solid form and magnesium single substance; a crucible assembly in which the solid-state source is placed, the crucible assembly being used to heat and sublimate the solid-state source to form a vapor containing magnesium iodide; an ion source arc chamber in communication with the crucible assembly for ionizing incoming magnesium iodide containing vapor to form a Mg + containing plasma; an extraction electrode disposed at an exit end of the ion source arc chamber for extracting Mg + from the Mg + containing plasma to form a magnesium ion beam.

[0018] Further, the crucible assembly includes a graphite crucible body having a chamber for holding the solid source formed therein, a hole disposed above the chamber for vapor to exit into the ion source arc chamber, and a plurality of resistance wires wound on the outer peripheral sidewall of the crucible body, the resistance wires being electrically connected to a power source.

[0019] Compared with the prior art, the present application has the following advantages: (1) The present application generates a magnesium ion beam by heating and evaporating a magnesium iodide solid source to produce vapor into the ion source arc chamber for discharge, which has high ionization efficiency and can realize extraction of a milliamperage level beam to meet the injection requirement. The discharge intensity can be adjusted by changing the heating temperature to adjust the amount of magnesium iodide vapor produced to realize generation of different beam currents.

[0020] (2) The magnesium iodide and magnesium powder mixed solid source is used as the source material to ionize and generate a magnesium ion beam. The mixed source material ionization method can improve the magnesium beam, prolong the service life of the ion source, and reduce the maintenance frequency. BRIEF DESCRIPTION OF DRAWINGS

[0021] In order to more clearly illustrate the technical solutions of the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiment or prior art description. Obviously, the drawings in the following description are only some embodiments of the present application, and other embodiments can also be obtained by those skilled in the art based on these drawings.

[0022] Figure 1 is a structure diagram of a magnesium ion beam generation device in the ion implanter of the present application.

[0023] Figure 2 is a structure diagram of a crucible assembly in the present application.

[0024] Figure 3 is a mass spectrum diagram of magnesium iodide ionization in the present application.

[0025] Figure 4 is a beam extraction diagram of the ion beam in the case of using magnesium single element and magnesium iodide mixture in the present application simulated by IBSimu ion source simulation software.

[0026] Figure 5 Figure 3 is a diagram showing the variation of ion beam and Mg ion beam with different proportions of MgI2 and Mg in the present application.

[0027] Reference signs: 100, Mg ion beam generation device; 110, ion source arc chamber; 120, extraction electrode; 130, mass analyzer; 140, acceleration and focusing unit; 150, wafer; 160, crucible assembly; 161, crucible body; 162, chamber; 163, hole; 164, resistance wire; 165, power supply; 170, gas source; 180, gas flow meter; 190, solid source. DETAILED DESCRIPTION

[0028] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. However, it will be apparent to one skilled in the art that the present application can be practiced without the specific details set forth in this description. In other instances, well-known methods have not been described in detail in order to avoid unnecessarily obscuring the present application.

[0029] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description herein is for describing particular embodiments only and is not intended to be limiting of the present application.

[0030] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description herein is for describing particular embodiments only and is not intended to be limiting of the present application.

[0031] The present embodiment discloses a method for generating Mg ion beam in an ion implanter, comprising the following steps: S1: heating a solid source containing MgI2 to form a vapor containing MgI2; S2: delivering the vapor containing MgI2 into an ion source arc chamber; S3: ionizing the vapor entering the ion source arc chamber to form a plasma containing Mg + ; S4: extracting Mg + from the plasma to form a mA-level Mg ion beam.

[0032] In step S1, the raw material in the form of solid-state containing MgI2 has a low melting point and sublimation temperature, which is easy to sublimate through the heating element of the crucible assembly. The solid-state source is heated to a specific temperature, which can directly convert from solid state to gaseous MgI2 vapor. This process avoids the risk of high-pressure storage of traditional gaseous sources, and can reduce process fluctuations caused by gas leakage.

[0033] In some embodiments, the solid-state source can be composed of magnesium iodide entirely; the solid-state source can be in any one or a mixture of powder, block or granular form.

[0034] Different forms can have different specific surface areas, heat conduction efficiencies and vapor escape paths.

[0035] Among them, the powder solid-state source has a fast sublimation rate, a short start-up time, is suitable for scenarios requiring rapid establishment of vapor concentration (such as quickly reaching the required beam current at the initial stage of the process), and has high heating uniformity; the block solid-state source has the benefits of stable feeding and long-term operation, its vapor generation is stable, and the beam current fluctuation is small, which is suitable for long-time continuous production; the granular solid-state source can balance the sublimation rate and stability, and can reduce the packing voids.

[0036] Different forms of solid-state sources are essentially to adapt to the dynamic process requirements of ion implanters. When a process needs to be quickly switched (such as from low beam current to high beam current), a powder form can be selected to quickly increase the vapor concentration; when long-time batch production is performed, a block form can be selected to reduce the number of refills and maintain a stable beam current.

[0037] It should be noted that magnesium in its elemental form is in a metallic state at normal temperature and pressure, and it does not have a suitable gaseous source, so the magnesium iodide (MgI2) is used as a solid-state source to generate a magnesium ion beam in the embodiments of the present application. The melting point of magnesium iodide at normal pressure is 637℃, and the boiling point is 908℃, which is in a solid state under atmospheric pressure. As the temperature increases, the corresponding saturated vapor pressure of magnesium iodide gradually decreases, so the saturated vapor pressure of magnesium iodide at 500℃ in the ion source is not much different from the internal gas pressure value of the ion source of the ion implanter. At this time, the magnesium iodide solid-state source will sublimate into magnesium iodide vapor, and then enter the ion source arc chamber to be ionized. Based on this, the magnesium ion beam current can be generated and extracted by the heating and evaporation method. Among them, the ion source arc chamber in step S2 can be specifically selected as an IHC inter-heated cathode ion source.

[0038] When heating, the solid-state source containing magnesium iodide can be placed in a crucible for heating (i.e., a resistance wire is arranged on the outer periphery of the crucible, and the crucible is heated by heating the resistance wire), and the inside of the crucible is subjected to vacuum pumping treatment to realize the heating and sublimation of the solid-state source; in the embodiments, the entire heating process needs to be carried out in a low vacuum environment (such as 10 -3 ~10 -4 torr order), which not only avoids the mixing of air impurities into the vapor, but also ensures that the sublimated vapor can flow naturally to the arc chamber; and under this low pressure condition, the crucible is heated to 500℃, which can realize the sublimation of the magnesium iodide solid-state source (different temperatures correspond to different gas pressures); at this time, the magnesium iodide solid-state source in the crucible is heated by heat conduction, and when the temperature reaches the sublimation point of the magnesium iodide solid-state source, the magnesium iodide gradually changes from a solid state to a gaseous state, i.e., magnesium iodide vapor is formed.

[0039] Further, the magnesium iodide vapor enters the ion source arc chamber under the action of pressure difference, and the arc chamber has a cathode, a reflector structure and an arc chamber insulation, and a voltage difference of about 100V. At the same time, there is an axial magnetic field in the ion source arc chamber, and the magnesium iodide vapor is ionized to form a magnesium-containing plasma under the joint action of the electromagnetic field.

[0040] The ionization mode of magnesium iodide is as follows:

[0041] The magnesium ions can be generated by multiple ionization of magnesium iodide vapor, and other intermediate ions exist during the discharge process. The above method can be used to adjust the amount of magnesium iodide vapor entering the arc chamber by changing the heating temperature (adjusting the temperature of the resistance wire), so as to change the ion source discharge intensity and the size of the extracted beam. Under the action of the three electrodes at the outlet end of the ion source arc chamber, the magnesium ions are extracted to form an ion beam, which is screened and transmitted and injected into a wafer.

[0042] The three electrodes include a plasma electrode, a suppression electrode and a grounded electrode in sequence, and a gradient electric field is formed by a specific potential setting. The positive ions in the plasma are extracted by the voltage difference between the extraction electrode and the ion source discharge chamber, that is, the target ions (such as Mg ions) are efficiently extracted from the plasma and the beam shape is constrained.

[0043] The extracted ion beam can be screened out after passing through the mass analyzer to obtain an ion beam with a specific mass number; the ion beam screened out by the mass analyzer is accelerated and bunched by the acceleration and bunching unit, and the ion beam is accelerated from the initial extraction energy to a specific energy through a series of acceleration and bunching units. Finally, the ion beam with a specific energy is injected into a wafer at a certain angle and dose to realize the injection of magnesium ions.

[0044] Through the above experiment of magnesium iodide solid source, when the crucible temperature is heated to 500℃, the magnesium ion test obtains 8.8mA, and the mass spectrum is as shown in Figure 3 The magnesium iodide ionization obtains Mg + , I + , I ++ , I +++ , Mg ++ , MgI + , I + The content is high, and the magnesium iodide ionization is sufficient. Therefore, the Mg + 8~9mA beam can be extracted by this method, which meets the demand of high dose injection, and the size and angle are matched with the existing machine.

[0045] But because the mass of iodine ion is relatively high in the above scheme, it affects the extraction of ion beam, and leads to Mg+ In the whole extracted beam, the proportion is not high, and the beam size is affected.

[0046] Therefore, the application is further optimized, and in a preferred embodiment, another magnesium ion generation method is proposed, i.e., a magnesium iodide solid source and magnesium powder are mixed to generate magnesium ions.

[0047] That is, in step S1, the solid source containing magnesium iodide is a mixture of magnesium iodide and magnesium, and the mass proportion of magnesium in the mixture can be in the range of 0% to 50%, preferably 0 to 30%.

[0048] It can be understood that the melting point of magnesium at normal pressure is 651℃, which is close to the melting point of magnesium iodide. However, magnesium powder has the properties of easy oxidation, easy combustion and easy explosion, and easily reacts with air or water, so it is dangerous at high concentration and cannot be used alone.

[0049] In this embodiment, magnesium and magnesium iodide solid source are uniformly mixed, and the mixture exists in the form of particles or blocks.

[0050] In addition, since magnesium is easy to react with air and water, when mixing magnesium iodide and magnesium to form a mixture, it should be operated in a negative pressure and inert gas environment to prevent the mixture from reacting with air, water and other substances.

[0051] Meanwhile, the heating temperature of magnesium iodide and magnesium is about 500℃, which is lower than the self-ignition temperature of iodine, which allows the mixture to exist.

[0052] It should be noted that since gaseous magnesium iodide has high ionization efficiency, I + and other ions containing iodine account for a high proportion. According to the formula of the extracted ion current density under the space charge limitation of the ion source:

[0053] where V is the extraction voltage, m i is the ion mass, e is the charge number, d is the distance from the extraction electrode to the emission surface, ε0 is the vacuum dielectric constant, and J is the extraction ion current density. According to the formula, under the same voltage extraction, the higher the ion mass, the smaller the extraction current density, that is, the more difficult the beam is extracted. The mass number of iodine ions is large, the extraction current density is small, and the optimal distance of the iodine ion beam is different from that of the magnesium ion beam, which affects the flow intensity and emission degree of the magnesium ion beam.

[0054] By mixing magnesium iodide solid source and magnesium, magnesium iodide and magnesium can be sublimed into vapor at the same temperature and enter the arc chamber to participate in ionization, thereby improving the intensity of the magnesium ion beam and adjusting the emission degree of the magnesium ion beam, and improving the transmission efficiency.

[0055] The application simulates the ion beam extraction condition of magnesium single substance and magnesium iodide mixed use by using IBSimu ion source simulation software. Figure 4 As shown in the 80kV extraction beam current diagram, the beam current is in a divergent state in the ZX direction and in a slightly focused state in the ZY direction, and Mg ions, iodine ions and other ions exist in the ion beam, the extraction state of the beam current in the two directions corresponds to the actual machine state, and the extraction state meets the use.

[0056] As shown in the 80kV extraction beam current diagram, the beam current is in a divergent state in the ZX direction and in a slightly focused state in the ZY direction, and Mg ions, iodine ions and other ions exist in the ion beam, the extraction state of the beam current in the two directions corresponds to the actual machine state, and the extraction state meets the use. Figure 5 As shown in the 80kV extraction beam current diagram, the beam current is in a divergent state in the ZX direction and in a slightly focused state in the ZY direction, and Mg ions, iodine ions and other ions exist in the ion beam, the extraction state of the beam current in the two directions corresponds to the actual machine state, and the extraction state meets the use.

[0057] It can be understood that when the content of magnesium single substance is further increased in the mixture, although the proportion of magnesium ion beam is further increased to a certain extent, the risk of the generation process is also increased, therefore, in the embodiment of the application, the content of magnesium single substance is preferably set to 30%, so that the proportion of magnesium ion beam is increased, and the production safety is also ensured.

[0058] In summary, by using magnesium iodide or a mixture of magnesium iodide and magnesium single substance as a solid source, the magnesium ion beam is generated by entering into the internal discharge of the IHC hot cathode ion source, the ionization efficiency of this method is high, the beam current of the magnesium ion in the order of milliamperes can be extracted, and the injection demand is met. The amount of generated magnesium iodide vapor can be adjusted by changing the heating temperature, so that the discharge intensity is adjusted, and different beam currents are generated.

[0059] The magnesium iodide and magnesium powder mixed solid source are used as source materials to ionize to generate a magnesium ion beam; by using the mixed source material ionization method, the magnesium beam current can be increased, the service life of the ion source is prolonged, and the maintenance frequency is reduced.

[0060] With reference to Figure 1 and Figure 2 The embodiment of the application also provides a magnesium ion beam generation device 100 in an ion implanter, which comprises: A solid source 190, which comprises solid magnesium iodide or a mixture of solid magnesium iodide and magnesium single substance; a crucible assembly 160, in which the solid source 190 is placed, for heating and sublimating the solid source 190 to form a vapor containing magnesium iodide; an ion source arc chamber 110, which is in communication with the crucible assembly 160, for ionizing the incoming vapor containing magnesium iodide to form a Mg + containing plasma; an extraction electrode 120, which is arranged at the outlet end of the ion source arc chamber 110, for extracting Mg + from the Mg + containing plasma to form a magnesium ion beam.

[0061] In this embodiment, magnesium iodide or a mixture of magnesium iodide and elemental magnesium is selected as the solid source, which has a low melting point and sublimation temperature, and is easy to sublimate by the heating element of the crucible assembly.

[0062] The solid source is heated to a specific temperature in the crucible, and directly changes from a solid state to a gaseous magnesium iodide vapor. This process avoids the risk of high-pressure storage of traditional gaseous sources, reduces process fluctuations caused by gas leakage, and stably realizes the extraction of a milliamperage level of magnesium ions, which can meet the requirements of ion implanters.

[0063] It can be understood that the magnesium ion beam generating device 100 further includes a mass analyzer 130 and an acceleration and bunching unit 140 arranged at the rear end of the extraction electrode 120; the ion source arc chamber 110, the mass analyzer 130, and the acceleration and bunching unit 140 can all use conventional structures in the prior art.

[0064] The ion source arc chamber 110 is a common diathermy cathode ion source structure, and a gas source 170 is connected to the front end thereof. After BF3, PH3, AsH3, SiF4, etc. gas source 170 feeds gas into the ion source arc chamber 110, a discharge occurs in the ion source arc chamber 110 under a certain gas pressure, and the required B / P / As / Si plasma is generated.

[0065] A gas flow meter 180 can be arranged between the ion source arc chamber 110 and the gas source 170. Of course, a gas flow meter 180 can also be arranged between the crucible assembly 160 and the ion source arc chamber 110 to control and adjust the flow rate of the gas entering the ion source arc chamber 110.

[0066] It can be understood that the crucible assembly 160 and the gaseous source 170 do not affect each other, and in some embodiments, they can be performed simultaneously.

[0067] The extraction electrode 120 is usually configured as a three-electrode structure, including a plasma electrode, a suppression electrode, and a ground electrode, for extracting Mg +Mg in plasma + The Mg ions are extracted and formed into a beam.

[0068] The plasma electrode is applied with a high voltage relative to the ground, which is used to extract and accelerate the ions, so that the ions can obtain enough energy to meet the requirements of ion implantation process. The suppression electrode is applied with a negative voltage relative to the ground. On one hand, it can suppress the electrons returning from the downstream of the beam, and protect the ion source components at high potential from being damaged by the electron bombardment, thereby improving the service life of the ion source. On the other hand, the suppression electrode can also be used to adjust the voltage difference between the plasma electrode and the suppression electrode, so as to realize the electric field lens effect, and further control the divergence angle and the focus of the beam. The ground electrode serves as the potential reference point of the entire electrode system, and provides a zero potential reference, so that the potentials of other electrodes can be set and controlled relative to it, and the stability of the electric field distribution and the ion beam extraction process of the entire electrode system is ensured.

[0069] The extracted ion beam (containing Mg + ion beam) passes through the mass analyzer 130 (purifying Mg + , removing impurity ions such as I + , etc.), and different ions are selected, so that the Mg + ion beam with a specific mass number is obtained. The Mg + ion beam selected by the mass analyzer 130 is processed by the acceleration and bunching unit 140. Through a series of acceleration and bunching units, the Mg + ion beam is accelerated from the initial extraction energy to a specific energy, and finally the ion beam with the specific energy is implanted into the wafer 150 at a certain angle and dose, that is, the high-dose magnesium ion implantation is realized.

[0070] As shown in Figure 2 , it is a structural schematic diagram of the crucible assembly 160 in the application. The crucible assembly 160 includes a crucible body 161 made of graphite, a cavity 162 for placing the solid source 190 is formed in the inside of the crucible body 161, a hole 163 for the vapor to flow out and enter the ion source arc chamber 110 is arranged above the cavity 162, a plurality of resistance wires 164 are wound on the outer circumferential sidewall of the crucible body 161, and the resistance wires 164 are electrically connected with a power supply 165, which is specifically an alternating current power supply.

[0071] The crucible body 161 made of graphite has a high thermal conductivity and good uniformity of heat conduction. When the outer circumferential resistance wires 164 heat up, the heat can be quickly and uniformly transferred to the inner cavity 162 through the graphite, so as to ensure that the solid source (powder, block or granular) in the cavity 162 is heated uniformly, and avoid local temperature being too high or too low.

[0072] And the graphite material has strong chemical inertness, will not react with the internal formed magnesium iodide vapor, and will not release impurity gas due to high temperature, so as to ensure the purity of the vapor after the solid source sublimation.

[0073] The hole 163 above the chamber 162 is the only outlet of the vapor, which can guide the sublimation generated vapor to flow along the fixed path (hole -> communication pipeline -> ion source arc chamber), so as to ensure the vapor delivery efficiency.

[0074] In addition, the resistance wire 164 is used to heat the crucible body 161, and the resistance wire 164 generates Joule heat after being electrified, and directly converts the electric energy into heat energy. The resistance wire 164 wound on the outer periphery can uniformly transmit heat to the outer wall of the crucible body 161 by closely adhering or uniformly distributing (such as spiral winding).

[0075] And the resistance wire is connected with the power supply, and the heating amount of the resistance wire 164 can be accurately controlled by adjusting the input current / voltage, so as to control the temperature of the crucible body 161 and the internal solid source, and specifically, different temperature rises of 0-1000 DEG C can be provided to meet various process requirements. When the vapor pressure decreases, the current is automatically increased to increase the heating power, so as to maintain the stability of the vapor flow.

[0076] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0077] In the present application, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connecting", "fixing" and the like should be understood in a broad sense, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements or the interaction relationship of two elements, unless otherwise explicitly limited. For ordinary skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0078] In the description of the specification, the description of the terms "the embodiment", "one embodiment", "some embodiments", "example", "specific example", or "some examples" and the like means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Also, the specific features, structures, materials or characteristics described can be combined in any suitable manner in at least one embodiment or example. In addition, the person skilled in the art can combine and combine the different embodiments or examples described in the specification and the features of the different embodiments or examples without contradiction.

[0079] In addition, the terms "first", "second" are only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first", "second" can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "a plurality of" is at least two, for example, two, three, etc., unless otherwise specifically limited.

[0080] The above only describes the preferred embodiments of the present application and is not intended to limit the present application. Any modification, equivalent replacement and simple improvement made on the essential content of the present application shall be included in the protection scope of the present application.

Claims

1. A method of generating a magnesium ion beam in an ion implanter, comprising: The method comprises the following steps: heating a solid-state source containing magnesium iodide to form a vapor containing magnesium iodide; transporting the vapor containing magnesium iodide into an ion source arc chamber; The vapor entering the arc chamber of the ion source is ionized to form a plasma containing Mg + . Mg in the plasma is ionized + A mA-level Mg ion beam is extracted and formed.

2. The production method according to claim 1, characterized by, the solid-state source containing magnesium iodide is composed of magnesium iodide.

3. The production method according to claim 1, wherein The solid-state source containing magnesium iodide is a mixture of magnesium iodide and magnesium.

4. The production method according to claim 3, characterized by, The mass ratio of the magnesium in the mixture ranges from 0 to 50%, and is not 0.

5. The production method according to claim 1, wherein The solid-state source containing magnesium iodide is placed in a crucible for heating, and the interior of the crucible is subjected to vacuumization.

6. The production method according to claim 6, wherein The interior of the crucible is vacuumized to below 1mtorr, and the crucible is heated to a temperature above 500℃, so that the solid-state source in the crucible sublimates to form a vapor containing magnesium iodide.

7. The production method according to claim 1, wherein The solid-state source is in any one or a mixture of powder, block or granular form.

8. An apparatus for generating a magnesium ion beam in an ion implanter, comprising: The method comprises: a solid-state source comprising solid magnesium iodide or a mixture of solid magnesium iodide and magnesium; a crucible assembly in which the solid-state source is placed, the crucible assembly being used to heat the solid-state source to sublimate to form a vapor containing magnesium iodide; an ion source arc chamber in communication with the crucible assembly for ionizing incoming magnesium iodide containing vapor to form a Mg containing plasma + ; An extraction electrode is provided at an exit end of the ion source arc chamber, the extraction electrode being configured to extract Mg + ions from the plasma containing Mg + ions to form a beam of Mg ions.

9. The generating device of claim 8, wherein, The crucible assembly comprises a graphite crucible body, a cavity for placing the solid-state source is formed in the interior of the crucible body, a hole is arranged above the cavity for the vapor to flow out and enter the ion source arc chamber, a plurality of resistance wires are wound on the outer circumferential sidewall of the crucible body, and the resistance wires are electrically connected to a power supply.

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