Ion beam deposition equipment and alloy thin film deposition method
By controlling the rotating stage and baffle of the ion beam deposition equipment, combined with heating and a second ion source, the problems of uncontrollable element ratios and numerous impurities in alloy films were solved, achieving precise control and improved purity of alloy films.
Patent Information
- Application Number
- CN202410971224.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-18
- Publication Date
- 2026-01-20
AI Technical Summary
Existing technologies make it difficult to prepare alloy films with controllable element ratios and few impurities. In chemical vapor deposition methods, alloy films are often affected by precursors and by-products, resulting in uncontrollable element ratios and a large number of impurities in the alloy films.
Using an ion beam deposition device, the sputtering time and deposition position of alloying elements are precisely controlled by rotating the first stage and controlling the baffle. Combined with the assistance of a heater and a second ion source, the element ratio of the alloy film can be controlled and impurities reduced.
This method enables precise control of the element ratio in alloy thin films, reduces the content of impurity elements, and improves the utilization rate of the target material and the purity of the alloy thin film.
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Figure CN121362943A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of alloy preparation, in particular to an ion beam deposition device and an alloy thin film deposition method applied to the ion beam deposition device. BACKGROUND
[0002] An alloy is a multi-element chemical substance with metallic properties synthesized by two or more metals and metals or metals and non-metals through a certain method. According to the number of elements constituting the alloy, it can be divided into binary alloy, ternary alloy and multi-element alloy.
[0003] In a solid state, the alloy can be single-phase or multi-phase, and can be crystalline, quasi-crystalline or amorphous. In a crystalline alloy, depending on the differences in atomic radius, electronegativity and electron density of the constituent elements, different phases can appear, including solid solution which maintains the same structure as the pure element base and intermediate phases which are not the same as any constituent element structure. The intermediate phase includes normal valence compounds, electronic compounds, laves phase, sigma phase, interstitial phase and complex structure interstitial compounds, etc. The possible phases of the alloy in the equilibrium state can be known from the phase equilibrium diagram.
[0004] The structure and properties of the constituent phase in the alloy play a decisive role in the performance of the alloy. At the same time, the change of the alloy organization, i.e. the change of the relative amount of each phase, the grain size, shape and distribution of each phase, also has a great influence on the performance of the alloy. Therefore, by combining various elements to form various alloy phases and then through appropriate treatment, various performance requirements can be met.
[0005] The alloy thin film usually has the electrical or magnetic advantages of multiple alloy elements. The existing alloy thin film can be prepared by a chemical vapor deposition (CVD) method. Specifically, the precursor is vaporized and then chemically reacted to deposit an alloy thin film. However, the alloy thin film prepared in this way is often affected by the precursor and by-products, resulting in too many impurity elements in the alloy thin film, and the proportion of each element in the alloy thin film is uncontrollable.
[0006] Therefore, how to prepare an alloy thin film with controllable element proportion and fewer impurities is a technical problem to be solved by those skilled in the art. SUMMARY
[0007] In view of the above technical problems, the present application provides an ion beam deposition device and an alloy thin film deposition method applied to the ion beam deposition device, to realize the purpose of preparing an alloy thin film with controllable element proportion and fewer impurities.
[0008] Specifically, the application provides the following technical solutions.
[0009] The first aspect of the application provides an ion beam deposition device, comprising:
[0010] a first ion source for generating a first ion beam focused on a target region;
[0011] a first carrier, the first carrier comprising at least two sub-zones, different sub-zones being isolated from each other, the sub-zones being used for placing target materials, at least two sub-zones placing different target materials, the first carrier being rotatable so that the target materials of each sub-zone are in turn in the target region;
[0012] a second carrier for carrying a sample, when the first ion beam is focused on the target material in the target region, sputtered target particles are deposited on the surface of the sample;
[0013] a baffle, when the baffle is in a first state, the baffle blocks the deposition of sputtered target particles on the surface of the sample, when the baffle is in a second state, the baffle allows the deposition of sputtered target particles on the surface of the sample.
[0014] In a possible implementation, the ion beam deposition device further comprises:
[0015] a heater for heating the sample on the second carrier.
[0016] In a possible implementation, the ion beam deposition device further comprises:
[0017] a second ion source for generating a second ion beam to bombard the surface of the sample.
[0018] In a possible implementation, the baffle is rotatable;
[0019] When the baffle is in a first state, the baffle blocks the deposition of sputtered target particles on the surface of the sample, when the baffle is in a second state, the baffle allows the deposition of sputtered target particles on the surface of the sample, comprising:
[0020] When the baffle is rotated to a first position, the baffle shields the surface of the sample, so that the baffle blocks the deposition of sputtered target particles on the surface of the sample;
[0021] When the baffle is rotated to a second position, the baffle exposes the surface of the sample, so that the baffle allows the deposition of sputtered target particles on the surface of the sample.
[0022] In a possible implementation, the baffle comprises a plurality of sub-parts;
[0023] When the shutter is in the first state, the shutter blocks sputtered target particles from depositing onto the sample surface, and when the shutter is in the second state, the shutter allows sputtered target particles to deposit onto the sample surface, comprising:
[0024] When each of the subparts of the shutter is assembled together, the shutter covers the sample surface, so that the shutter blocks sputtered target particles from depositing onto the sample surface;
[0025] When each of the subparts of the shutter is separated from each other until the shutter exposes the sample surface, the shutter allows sputtered target particles to deposit onto the sample surface.
[0026] The second aspect of the present application provides an alloy thin film deposition method applied to the ion beam deposition device of any one of the above, the alloy thin film deposition method comprising:
[0027] According to the thickness of the pre-deposited alloy thin film, the proportion of each alloy element in the alloy thin film, and the deposition rate of each alloy element, the sputtering time of each alloy element is calculated;
[0028] The first ion source in the ion beam deposition device is controlled to generate a first ion beam focused on a target area, and the first carrier in the ion beam deposition device is controlled to rotate, so that the targets on each subpart of the first carrier are rotated to the target area in turn and stay for a period of time. The targets in the target area are sputtered and deposited onto the sample surface on the second carrier by the first ion beam. Each target on each subpart corresponds to an alloy element. The total time for sputtering each target on each subpart in the target area by the first ion beam is the calculated sputtering time of the corresponding alloy element.
[0029] When the target area corresponds to the switching of the target on one subpart to the target on another subpart of the first carrier, the shutter in the ion beam deposition device is controlled to be in the first state, which blocks sputtered target particles from depositing onto the sample surface. When the target area corresponds to the target on one subpart of the first carrier, the shutter is controlled to be in the second state, which allows the sputtered target to deposit onto the sample surface.
[0030] In one possible implementation, the ion beam deposition device further comprises a heater, and the alloy thin film deposition method further comprises:
[0031] The heater is controlled to heat the sample on the second carrier, so that the temperature of the sample is 100-1000℃, including the end points.
[0032] In a possible implementation, the ion beam deposition apparatus further comprises a second ion source, and the alloy thin film deposition method further comprises:
[0033] controlling the second ion source to generate a second ion beam to bombard the sample surface.
[0034] In a possible implementation, the shutter is rotatable.
[0035] When the target region corresponds to a switch of the target material on one sub-region to the target material on another sub-region of the first carrier, the shutter in the ion beam deposition apparatus is controlled to be in a first state to block sputtered target particles from depositing onto the sample surface; when the target region corresponds to the target material on one sub-region of the first carrier, the shutter is controlled to be in a second state to allow the sputtered target to deposit onto the sample surface, comprising:
[0036] When the target region corresponds to a switch of the target material on one sub-region to the target material on another sub-region of the first carrier, the shutter is controlled to rotate to a first position to shield the sample surface with the shutter to block sputtered target particles from depositing onto the sample surface.
[0037] When the target region corresponds to the target material on one sub-region of the first carrier, the shutter is controlled to rotate to a second position to expose the sample surface with the shutter to allow sputtered target particles to deposit onto the sample surface.
[0038] In a possible implementation, the shutter comprises a plurality of sub-parts.
[0039] When the target region corresponds to a switch of the target material on one sub-region to the target material on another sub-region of the first carrier, the shutter in the ion beam deposition apparatus is controlled to be in a first state to block sputtered target particles from depositing onto the sample surface; when the target region corresponds to the target material on one sub-region of the first carrier, the shutter is controlled to be in a second state to allow the sputtered target to deposit onto the sample surface, comprising:
[0040] When the target region corresponds to a switch of the target material on one sub-region to the target material on another sub-region of the first carrier, the shutter is controlled to rotate to a first position to shield the sample surface with the shutter to block sputtered target particles from depositing onto the sample surface.
[0041] When the target region corresponds to the target material on one sub-region of the first carrier, the shutter is controlled to rotate to a second position to expose the sample surface with the shutter to allow sputtered target particles to deposit onto the sample surface.
[0042] By means of the technical scheme, when the alloy thin film is deposited by the ion beam deposition equipment, the sputtering time of each alloy element can be calculated according to the thickness of the pre-deposited alloy thin film, the proportion of each alloy element in the alloy thin film and the deposition rate of each alloy element, then the first ion source in the ion beam deposition equipment can be controlled to generate the first ion beam focused on the target area, and the first carrier in the ion beam deposition equipment can be controlled to rotate, so that the target materials on each partition of the first carrier rotate to the target area in turn and stay for a period of time, and the target materials in the target area are sputtered and deposited on the sample surface by the first ion beam, and each target material on the first carrier corresponds to an alloy element; and when the target area corresponding to the first carrier is switched from the target material on one partition to the target material on another partition, the shutter in the ion beam deposition equipment is controlled to be in the first state to block the sputtered target material particles from being deposited on the sample surface, and when the target area corresponding to the first carrier is on one partition of the target material, the shutter is controlled to be in the second state to allow the sputtered target material particles to be deposited on the sample surface. In this way, only when the first ion beam is focused on the target material on one partition of the first carrier, the sputtered particles formed by sputtering the target material on the partition will be deposited on the sample surface, and through the rotation of the first carrier, the target materials on each partition are sputtered and deposited on the sample surface for multiple cycles, and finally an alloy thin film is formed, and the total time of each target material in the target area being sputtered by the first ion beam is controlled to be the calculated sputtering time of the corresponding alloy element, so that the proportion of each alloy element in the alloy thin film is accurately controlled, and the content of impurity elements in the alloy thin film can be effectively reduced, and the purity of the target materials on each partition is relatively high, and the rotatability of the first carrier also increases the utilization rate of the target materials on each partition. BRIEF DESCRIPTION OF DRAWINGS
[0043] The above and other features, advantages, and aspects of the present disclosure will become more apparent by referring to the following detailed description in conjunction with the accompanying drawings. In the drawings, like reference numerals refer to like elements throughout. It is to be understood that the drawings are schematic, and the proportions of the elements and features do not necessarily bear the same scale.
[0044] Figure 1 A structural schematic diagram of an ion beam deposition equipment provided by an embodiment of the present application;
[0045] Figure 2 A top view schematic diagram of a first carrier in the ion beam deposition equipment provided by an embodiment of the present application;
[0046] Figure 3 A top view schematic diagram of another first carrier in the ion beam deposition equipment provided by an embodiment of the present application;
[0047] Figure 4 A top view schematic diagram of still another first carrier in the ion beam deposition equipment provided by an embodiment of the present application;
[0048] Figure 5 Fig. 2 shows a schematic diagram of a rotatable shutter changing from a first state to a second state in an ion beam deposition apparatus according to an embodiment of the present application;
[0049] Figure 6 Fig. 3 shows a schematic diagram of a shutter comprising a plurality of sections changing from a first state to a second state in an ion beam deposition apparatus according to an embodiment of the present application;
[0050] Figure 7 Fig. 4 shows a schematic diagram of a first stage of a first stage changing from a first state to a second state in an ion beam deposition apparatus according to an embodiment of the present application.
[0051] Reference Signs:
[0052] 10 - first ion source, 11 - first ion beam, 20 - first stage, 21 - section, 22 - target material, 30 - second stage, 31 - sample, 40 - shutter, 41 - section, 50 - second ion source, 51 - second ion beam. DETAILED DESCRIPTION
[0053] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.
[0054] In the following description, a large number of specific details are set forth in order to facilitate a thorough understanding of the present application, but the present application can also be implemented in other ways different from those described herein, and those skilled in the art can make similar generalizations without departing from the connotation of the present application, therefore the present application is not limited by the specific embodiments disclosed below.
[0055] As described in the background section, how to prepare an alloy thin film with controllable element ratio and less impurities is a technical problem to be solved by those skilled in the art.
[0056] Therefore, the embodiments of the present application provide an ion beam deposition apparatus, Figure 1 Fig. 1 shows a structural schematic diagram of an ion beam deposition apparatus according to an embodiment of the present application, as shown in the figure, the ion beam deposition apparatus comprises: Figure 1
[0057] a first ion source 10 for generating a first ion beam 11 focused on a target region;
[0058] a first stage 20, Figures 2-4 Further shown are top views of several first stages 20 in ion beam deposition apparatuses according to embodiments of the present application, in conjunction with Figures 1-4 As shown, the first stage 20 includes at least two sub-zones 21, different sub-zones 21 are isolated from each other, the sub-zones 21 are used to place target materials 22, and at least two sub-zones 21 place different target materials 22; the first stage 20 is rotatable, so that the target materials 22 in each sub-zone 21 are in turn in the target area;
[0059] A second stage 30 is used to carry a sample 31, when the first ion beam 11 is focused on the target material 22 in the target area, the sputtered target particles are deposited on the surface of the sample 31;
[0060] A shutter 40, when the shutter 40 is in a first state, the shutter 40 blocks the sputtered target particles from being deposited on the sample surface, when the shutter 40 is in a second state, the shutter 40 allows the sputtered target particles to be deposited on the sample surface.
[0061] Optionally, the first ion source 10 can be a single-sputtering focused ion source, so that the generated first ion beam 11 can be focused on the target material 22 in a single sub-zone 21 of the first stage 20, for example, the first ion source 10 can be a radio frequency (RFICP) ion source, but the type of the first ion source 10 is not limited in the present application.
[0062] Optionally, the first ion beam 11 can be a neutral ion beam, which includes but is not limited to an ion beam formed by any one or more of He, Ne, Ar, Kr and Xe, the inert gas enters the gas inlet of the first ion source 10, and then the first ion beam 11 is generated.
[0063] Optionally, the shape of the first ion beam 11 can be circular or linear, and the shape of the first ion beam 11 is not limited in the present application.
[0064] Optionally, the energy range of the first ion beam 11 when bombarding the target material in each sub-zone 21 can be higher than 800eV, but the present application does not make any limitation.
[0065] Optionally, the first stage 20 can be Figure 2 elliptical, including two sub-zones 21; it can also be Figure 3 triangular, including three sub-zones 21; it can also be Figure 4 square, including four sub-zones 21; it can also be other regular or irregular shapes, and the shape and number of sub-zones of the first stage 20 are not limited in the present application.
[0066] The application does not limit the shape of each sub-area 21 of the first carrier 20. In addition, the areas of each sub-area 21 of the first carrier 20 can be equal or not equal; the shapes of each sub-area 21 of the first carrier 20 can be the same or different, which depends on the specific situation.
[0067] From Figure 1 It can be seen that the first ion beam 11 and the target 22 surface in the target area have a certain angle, and the application does not limit this angle, which can be adjusted according to the sputtering condition.
[0068] From Figure 1 It can also be seen that the target 22 surface in the target area and the sample 31 surface also have a certain angle, and the application does not limit this angle, which can be adjusted according to the sputtering condition.
[0069] It can be understood that the first ion beam 11 generated by the first ion source 10 is focused on the target area, and the first carrier 20 rotates, so that the target 22 of each sub-area 21 is in the target area for a period of time, so that the first ion beam 11 can be focused on the target 22 in the target area, and the target 22 in the target area is bombarded to make the sputtered target particles deposited on the sample surface. With the rotation of the first carrier 20, the target 22 of each sub-area 21 is in the target area in turn, so that the target 22 of each sub-area 21 is sputtered and deposited on the sample surface in turn to form an alloy thin film. That is, the target area, i.e. the focusing area of the first ion beam 11, through the rotation of the first carrier 20, the target 22 of each sub-area 21 is in the focusing area of the first ion beam 11 in turn, and is sputtered and deposited on the sample surface by the first ion beam 11 to form an alloy thin film.
[0070] When the alloy thin film is deposited by the ion beam deposition device provided in the embodiments of the present application, the sputtering time of each alloy element can be calculated according to the thickness of the pre-deposited alloy thin film, the proportion of each alloy element in the alloy thin film and the deposition rate of each alloy element, and then the first ion source 10 in the ion beam deposition device can be controlled to generate the first ion beam 11 focused on the target area, and the first carrier 20 in the ion beam deposition device can be controlled to rotate, so that the target materials on each sub-area 21 of the first carrier 20 are rotated to the target area in turn and stay for a period of time, and the target material 22 in the target area is sputtered and deposited on the surface of the sample 31 on the second carrier 30 by the first ion beam 11. Each target material 22 on the first carrier 20 corresponds to one alloy element, so that the total time of each target material 22 in the target area sputtered by the first ion beam 11 is controlled to be the sputtering time of the corresponding alloy element calculated, so as to realize the regulation of the proportion of each alloy element in the alloy thin film, effectively reduce the content of impurity elements in the alloy thin film, and increase the utilization rate of the target materials 22 in each sub-area 21 due to the rotatability of the first carrier 20.
[0071] In the embodiments of the present application, considering that in the rotation process of the first carrier 20, the target materials of two adjacent sub-areas 21 on the first carrier 20 will be in the focusing area (i.e. the target area) of the first ion beam 11 at the same time, the baffle 40 is arranged, and when the baffle 40 is in the first state, the baffle 40 blocks the sputtered target material particles from being deposited on the sample surface, and when the baffle 40 is in the second state, the baffle 40 allows the sputtered target material particles to be deposited on the sample surface. In this way, only when the first ion beam 11 is focused on the target material 22 of one sub-area 21 of the first carrier 20, the sputtered particles formed by sputtering the target material 22 of the sub-area will be deposited on the sample surface. Through the rotation of the first carrier 20, the target materials 22 of each sub-area 21 are sputtered and deposited on the sample surface in circulation for multiple times, and finally an alloy thin film is formed. Through the control that the total time of each target material 22 in the target area sputtered by the first ion beam 11 is the sputtering time of the corresponding alloy element calculated, the precise regulation of the proportion of each alloy element in the alloy thin film can be realized.
[0072] In this embodiment, at least two partitions 21 on the first stage 20 are equipped with different target materials 22, and each target material 22 corresponds one-to-one with an alloy element. In one scenario, the target materials 22 in each partition 21 of the first stage 20 are different, and each target material in each partition 21 corresponds one-to-one with an alloy element. In this case, the total time for the target material 22 in each partition 21 to be sputtered by the first ion beam 11 in the target area is the calculated sputtering time for the corresponding alloy element. In another scenario, some partitions 21 on the first stage 20 are equipped with different target materials 22, while some partitions 21 may be equipped with the same target material 22. In this case, each target material 22 corresponds one-to-one with an alloy element, and the total time for each target material 22 to be sputtered by the first ion beam 11 in the target area is the calculated sputtering time for the corresponding alloy element.
[0073] Optionally, the shape of the baffle 40 can be circular, semi-circular, fan-shaped, elliptical, square, or other regular or irregular shapes. This application does not limit the shape of the baffle 40.
[0074] Optional, such as Figure 1 As shown, the baffle 40 is positioned close to the sample 31 between the first stage 20 and the sample 31, so that the baffle 40 can allow or block sputtered target particles from depositing onto the surface of the sample 31.
[0075] It should be noted that, in order to form an alloy thin film, the target material on each partition 21 of the first stage 20 should not remain in the target area for too long each time it is sputtered by the first ion beam 11. In this way, the target material particles sputtered on each partition 21 will mix and deposit on the surface of the sample 31 to form an alloy thin film.
[0076] Optionally, in some embodiments of this application, the ion beam deposition apparatus further includes a heater ( Figure 1 (Not shown in the image) The heater is used to heat the sample 31 on the second stage 30 so that the temperature of the sample 31 is within a certain temperature range. Optionally, the heater can be controlled to heat the sample 31 on the second stage 30 so that the temperature of the sample 31 is between 100℃ and 1000℃, including the endpoint values, which is conducive to the uniform mixing and deposition of sputtered target particles on each partition 21 on the surface of the sample 31 to form an alloy thin film.
[0077] Optionally, in some embodiments of this application, such as Figure 1As shown, the ion beam deposition apparatus further comprises a second ion source 50 for generating a second ion beam 51 to bombard the surface of the sample 31, which can be used to clean the sample 31 before starting deposition of the alloy thin film, and can also be used to assist deposition of the alloy thin film after starting deposition of the alloy thin film. Specifically, not only can the second ion beam 51 accelerate deposition of the sputtered target particles to the surface of the sample 31, but also can promote uniform mixing and deposition of the sputtered target particles on the surface of the sample 31 in each sub-zone 21.
[0078] Optionally, the second ion source 50 can be a radio frequency (RFICP) ion source, but the present application does not limit the second ion source 50.
[0079] Optionally, the second ion beam 51 can be a neutral ion beam, which includes but is not limited to an ion beam formed by any one or more of He, Ne, Ar, Kr and Xe, and the inert gas enters the second ion source 20 through a gas inlet, and then generates the second ion beam 51.
[0080] As known from the foregoing, the present application does not limit the shape of the baffle 40. Optionally, in some embodiments of the present application, as shown in Figure 5 the baffle 40 can be rotated, Figure 5 a schematic view showing the rotatable baffle 40 changing from a first state to a second state is shown, as shown in Figure 5 the leftmost diagram in FIG. 8, when the baffle 40 is rotated to the first position, the baffle 40 shields the surface of the sample 31, at this time the baffle 40 is in the first state, that is, the baffle 40 is closed, and the baffle 40 blocks the deposition of the sputtered target particles to the surface of the sample; as shown in Figure 5 the rightmost diagram in FIG. 8, when the baffle 40 is rotated to the second position, the baffle 40 exposes the surface of the sample 31, at this time the baffle 40 is in the second state, that is, the baffle 40 is opened, and the baffle 40 allows the deposition of the sputtered target particles to the surface of the sample; Figure 5 the middle diagram in FIG. 8 shows a schematic view of the baffle 40 rotating to a position between the first position and the second position.
[0081] That is, in this embodiment, when the baffle 40 is in the first state, the baffle 40 blocks the deposition of the sputtered target particles to the surface of the sample, and when the baffle 40 is in the second state, the baffle 40 allows the deposition of the sputtered target particles to the surface of the sample, including:
[0082] When the baffle 40 is rotated to the first position, the baffle 40 shields the surface of the sample, so that the baffle 40 blocks the deposition of the sputtered target particles to the surface of the sample;
[0083] When the baffle 40 is rotated to the second position, the baffle 40 exposes the surface of the sample, so that the baffle 40 allows the deposition of the sputtered target particles to the surface of the sample.
[0084] In the embodiment, the shape of the baffle 40 can be circular, considering that the sample 31 is usually a wafer.
[0085] Optionally, in some other embodiments of the present application, as shown in Figure 6 The baffle 40 includes a plurality of sections 41, Figure 6 The schematic diagram of the baffle 40 including a plurality of sections 41 is shown in the first state and the second state, as shown in Figure 6 When the sections 41 of the baffle 40 are spliced together, the baffle 40 shields the surface of the sample 31, at this time, the baffle 40 is in the first state, that is, the baffle 40 is closed, and the baffle 40 blocks the sputtered target particles from depositing on the sample surface, as shown in Figure 6 When the sections 41 of the baffle 40 are separated from each other until the baffle 40 exposes the surface of the sample 31, the baffle 40 is in the second state, that is, the baffle 40 is opened, and the baffle 40 allows the sputtered target particles to deposit on the sample surface, as shown in Figure 6 The middle-right diagram in FIG. 4 shows a schematic diagram of a state in which the sections 41 of the baffle 40 are separated from each other but do not completely expose the surface of the sample 31.
[0086] That is, in the embodiment, when the baffle 40 is in the first state, the baffle 40 blocks the sputtered target particles from depositing on the sample surface, and when the baffle 40 is in the second state, the baffle 40 allows the sputtered target particles to deposit on the sample surface, including:
[0087] When the sections 41 of the baffle 40 are spliced together, the baffle 40 shields the sample surface, so that the baffle 40 blocks the sputtered target particles from depositing on the sample surface;
[0088] When the sections 41 of the baffle 40 are separated from each other until the baffle 40 exposes the sample surface, the baffle allows the sputtered target particles to deposit on the sample surface.
[0089] In the embodiment, the shape of the baffle 40 can be circular, considering that the sample 31 is usually a wafer.
[0090] Figure 6 For example, the baffle 40 includes four sections 41, but the number of sections 41 included in the baffle 40 is not limited in the present application, and the shape of the sections 41 in the baffle 40 is also not limited in the present application.
[0091] The alloy thin film deposition method provided in the embodiments of the present application is applied to the ion beam deposition device provided in any of the above embodiments, and the alloy thin film deposition method includes:
[0092] S10: calculating the sputtering time of each alloy element according to the thickness of the pre-deposited alloy thin film, the proportion of each alloy element in the alloy thin film, and the deposition rate of each alloy element.
[0093] It should be noted that the deposition rate of an element is represented by the ratio of the thickness of the element deposited to time, for example, a certain thickness d of X element thin film is deposited by ion beam sputtering in a period of time t, then the deposition rate v of X element is d / t, thus, according to the thickness of the pre-deposited alloy thin film and the proportion of each alloy element in the alloy thin film, the thickness of each alloy element required to be deposited in the alloy thin film can be obtained, and then, according to the thickness of each alloy element required to be deposited in the alloy thin film and the deposition rate of each alloy element, the sputtering time of each alloy element can be calculated.
[0094] It can be understood that the deposition rate of each alloy element can be obtained from a database recording the sputtering rate and yield of different elements.
[0095] It can also be understood that if the deposition rate of each alloy element in the alloy thin film is equal, the proportion of the calculated sputtering time of each alloy element is equal to the proportion of each alloy element, but generally the deposition rate of each alloy element in the alloy thin film is not necessarily equal, if the proportion of each alloy element in the alloy thin film is regarded as the film thickness of each alloy element in the unit thickness of the alloy thin film, then the proportion of the calculated sputtering time of each alloy element is equal to the ratio of the proportion of each alloy element to the deposition rate of the corresponding alloy element.
[0096] S20: controlling the first ion source 10 in the ion beam deposition device to generate the first ion beam 11 focused on the target area, and controlling the first carrier 20 in the ion beam deposition device to rotate, so that the targets 22 on each sub-area 21 of the first carrier 20 rotate in turn to stay in the target area for a period of time, the target 22 in the target area is sputtered and deposited by the first ion beam 11 to the surface of the sample 31 located on the second carrier 30, the target 22 corresponds to one alloy element, and the total time of each target 22 in the target area sputtered by the first ion beam 11 is the calculated sputtering time of the corresponding alloy element;
[0097] Wherein, when the target area corresponds to the switching of the target on one sub-area 21 to the target on another sub-area 21 of the first carrier 20, the shutter 40 in the ion beam deposition device is controlled to be in the first state to block the sputtered target particles from being deposited on the sample surface, and when the target area corresponds to the target on one sub-area 21 of the first carrier 20, the shutter 40 is controlled to be in the second state to allow the sputtered target to be deposited on the sample surface.
[0098] In order to form the alloy thin film, the time for each target material 22 on each subzone 21 of the first carrier 20 to stay in the target region to be sputtered by the first ion beam 11 should not be too long, so that the sputtered target material particles on each subzone 21 are mixed and deposited on the surface of the sample 31 to form the alloy thin film. Therefore, according to the calculated sputtering time of each alloy element, the time for each target material 22 on each subzone 21 of the first carrier 20 to stay in the target region to be sputtered by the first ion beam 11 can be set, so that the total time for each target material 22 to stay in the target region to be sputtered by the first ion beam 11 is equal to the calculated sputtering time of the corresponding alloy element.
[0099] It can be understood that, due to the cyclic rotation of the first carrier 20, the proportion of time for each target material 22 to stay in the target region to be sputtered by the first ion beam 11 during each rotation of the first carrier 20 can be equal to the proportion of the calculated sputtering time of each alloy element.
[0100] In order to more intuitively show the alloy thin film deposition method provided by the embodiments of the present application, Figure 7 corresponding schematic diagrams of the state of the shutter 40 when different regions of the first carrier 20 rotate to the target region are shown, as shown in the first to fifth diagrams indicated by the arrows in Figure 7 The first carrier 20 includes three subzones 21, and different target materials are placed on the three subzones 21. When the first carrier 20 rotates so that the target material on one subzone 21 is in the target region to be sputtered by the first ion beam 11, the shutter 40 is in the second state, i.e., the shutter 40 is opened to allow the sputtered target material particles to deposit on the surface of the sample; when the first carrier 20 rotates to switch from the target material on one subzone 21 to the target material on another subzone 21, the shutter 40 is in the first state, i.e., the shutter 40 is closed to block the sputtered target material particles from depositing on the surface of the sample.
[0101] In order to facilitate control, after the time for each target material 22 on each subzone 21 of the first carrier 20 to stay in the target region to be sputtered by the first ion beam 11 is set, the shutter 40 can be in the second state, i.e., the shutter 40 is opened to allow the sputtered target material particles to deposit on the surface of the sample, only when the time for each target material 22 on each subzone 21 of the first carrier 20 to stay in the target region is within the set time range, and the shutter 40 is in the first state, i.e., the shutter 40 is closed to block the sputtered target material particles from depositing on the surface of the sample, at other times.
[0102] Specifically, as shown in the first to fifth diagrams indicated by the arrows in Figure 7 Taking the example that the first carrier 20 includes three subzones 21, and Ga target material, In target material and Zn target material are placed on the three subzones 21, as shown in the first to fifth diagrams indicated by the arrows in Figure 7 When the first carrier 20 rotates so that the In target material is in the target region to be sputtered by the first ion beam 11, the shutter 40 is in the second state, i.e., the shutter 40 is opened to allow the sputtered In target material particles to deposit on the surface of the sample, as shown in the first diagram in Figure 7In the second figure, when the target region corresponding to the first stage 20 is switched from the In target to the Ga target, the shutter 40 is in the first state, i.e., the shutter 40 is closed, blocking the sputtered target particles from depositing onto the sample surface; then, as shown in the third figure, when the first stage 20 is rotated so that the Ga target is in the target region and sputtered by the first ion beam 11, the shutter 40 is in the second state, i.e., the shutter 40 is open, allowing the sputtered Ga target particles to deposit onto the sample surface; next, as shown in the fourth figure, when the target region corresponding to the first stage 20 is switched from the Ga target to the Zn target, the shutter 40 is in the first state, i.e., the shutter 40 is closed, blocking the sputtered target particles from depositing onto the sample surface; then, as shown in the fifth figure, when the first stage 20 is rotated so that the Zn target is in the target region and sputtered by the first ion beam 11, the shutter 40 is in the second state, i.e., the shutter 40 is open, allowing the sputtered Zn target particles to deposit onto the sample surface. Figure 7 Figure 7 Figure 7
[0103] Therefore, the alloy thin film deposition method provided in the embodiments of the present application can be used to deposit an alloy thin film by using the ion beam deposition device provided in the embodiments of the present application. First, the sputtering time of each alloy element is calculated according to the thickness of the pre-deposited alloy thin film, the proportion of each alloy element in the alloy thin film, and the deposition rate of each alloy element. Then, the first ion source 10 in the ion beam deposition device can be controlled to generate the first ion beam 11 focused on the target area, and the first carrier 20 in the ion beam deposition device can be controlled to rotate, so that the target materials on each sub-area 21 of the first carrier 20 are rotated to the target area in turn for a period of time. The target materials in the target area are sputtered and deposited onto the surface of the sample 31 on the second carrier 30 by the first ion beam. Each target material 22 on the first carrier 20 corresponds to one alloy element. When the target area corresponding to the first carrier 20 is switched from the target material on one sub-area 21 to the target material on another sub-area 21, the shutter 40 in the ion beam deposition device is controlled to be in the first state to block the sputtered target material particles from being deposited onto the surface of the sample. When the target area corresponding to the first carrier 20 is on one sub-area 21, the shutter 40 is controlled to be in the second state to allow the sputtered target material particles to be deposited onto the surface of the sample. In this way, only when the first ion beam 11 is focused on the target material 22 on one sub-area 21 of the first carrier 20, the sputtered particles formed by sputtering the target material 22 on the sub-area will be deposited onto the surface of the sample. Through the rotation of the first carrier 20, the target materials 22 on each sub-area 21 are sputtered and deposited onto the surface of the sample in cycles, and finally an alloy thin film is formed. By controlling the total time for each target material 22 in the target area to be sputtered by the first ion beam 11 to be the calculated sputtering time of the corresponding alloy element, the proportion of each alloy element in the alloy thin film can be accurately controlled. In addition, the content of impurity elements in the alloy thin film can be effectively reduced, and the purity of the target materials in each sub-area is relatively high. The rotatability of the first carrier 20 also increases the utilization rate of the target materials in each sub-area 21.
[0104] Optionally, in some embodiments of the present application, the ion beam deposition device further comprises a heater, and the alloy thin film deposition method can further comprise:
[0105] S30: controlling the heater to heat the sample 31 on the second carrier 30, so that the temperature of the sample 31 is in the range of 100-1000°C, inclusive.
[0106] In this embodiment, the heater is controlled to heat the sample 31 on the second carrier 30, so that the temperature of the sample 31 is in the range of 100-1000°C, inclusive. This is conducive to the uniform mixing and deposition of the sputtered target material particles on each sub-area 21 on the surface of the sample 31 to form an alloy thin film.
[0107] Optionally, in some embodiments of the present application, as Figure 1As shown, the ion beam deposition apparatus further comprises a second ion source 50, and the alloy thin film deposition method can further comprise:
[0108] S40: controlling the second ion source 40 to generate the second ion beam 41 to bombard the surface of the sample 31.
[0109] In this embodiment, the second ion source 50 is controlled to generate the second ion beam 51 to bombard the surface of the sample 31, so that the second ion source 50 can not only clean the sample 31 before starting to deposit the alloy thin film, but also assist in depositing the alloy thin film after starting to deposit the alloy thin film. Specifically, not only can the sputtered target particles be accelerated to deposit on the sample surface, but also the sputtered target particles on each sub-area 21 can be promoted to uniformly mix and deposit on the surface of the sample 31.
[0110] Optionally, in some embodiments of the present application, as shown in Figure 5 The shutter 40 can be rotated, and in the alloy thin film deposition method, when the target area corresponding to the first carrier 20 is switched from the target on one sub-area 21 to the target on another sub-area 21, the shutter 40 in the ion beam deposition apparatus is controlled to be in the first state to block the sputtered target particles from depositing on the sample surface, and when the target area corresponding to the first carrier 20 is the target on one sub-area 21, the shutter 40 is controlled to be in the second state to allow the sputtered target to deposit on the sample surface, including:
[0111] When the target area corresponding to the first carrier 20 is switched from the target on one sub-area 21 to the target on another sub-area 21, the shutter 40 is controlled to rotate to the first position to block the sample surface with the shutter 40, thereby blocking the sputtered target particles from depositing on the sample surface;
[0112] When the target area corresponding to the first carrier 20 is the target on one sub-area 21, the shutter 40 is controlled to rotate to the second position to expose the sample surface with the shutter 40, thereby allowing the sputtered target particles to deposit on the sample surface.
[0113] Optionally, in some other embodiments of the present application, as shown in Figure 6 The shutter 40 comprises a plurality of parts 41, and in the alloy thin film deposition method, when the target area corresponding to the first carrier 20 is switched from the target on one sub-area 21 to the target on another sub-area 21, the shutter 40 in the ion beam deposition apparatus is controlled to be in the first state to block the sputtered target particles from depositing on the sample surface, and when the target area corresponding to the first carrier 20 is the target on one sub-area 21, the shutter 40 is controlled to be in the second state to allow the sputtered target to deposit on the sample surface, including:
[0114] When the target area corresponding to the first stage 20 is switched from the target material on one partition 21 to the target material on another partition 21, the various parts 41 of the control baffle 40 are spliced together so that the baffle 40 blocks the sample surface and prevents the sputtered target particles from depositing on the sample surface.
[0115] When the target area corresponds to the target material on a partition 21 of the first stage 20, the various parts of the control baffle 40 separate from each other until the baffle 40 exposes the sample surface, allowing the sputtered target material particles to deposit on the sample surface.
[0116] The following are several embodiments of alloy thin film preparation using the alloy thin film deposition method provided in the embodiments of this application.
[0117] Example A:
[0118] like Figure 2 As shown, the first stage 20 includes two partitions 21, which are respectively used to place Ti and Mo targets, and TiMo alloy is prepared using the alloy thin film deposition method provided in the embodiments of this application.
[0119] Specifically, firstly, the deposition rates of Ti and Mo are retrieved from the database. Then, based on the thickness of the pre-deposited TiMo alloy, the ratio of Ti to Mo elements in the TiMo alloy, and the deposition rates of Ti and Mo elements, the total sputtering time required on the Ti target and the total sputtering time required on the Mo target are calculated. Subsequently, the dwell time of the Ti target and the dwell time of the Mo target in the focusing region of the first ion beam 11 are set. It can be understood that the ratio between the dwell time of the Ti target and the dwell time of the Mo target in the focusing region of the first ion beam 11 is equal to the ratio between the calculated total sputtering time required on the Ti target and the total sputtering time required on the Mo target.
[0120] Then, the first ion source 10 in the ion beam deposition equipment is controlled to generate a first ion beam 11 which is focused on the target area, and the first stage 20 in the ion beam deposition equipment is controlled to rotate, so that the Ti target and Mo target of the first stage 20 rotate in turn to stay in the target area for a period of time.
[0121] When the Ti target rotates to the target area, the baffle 40 is opened, exposing the sample surface and allowing sputtered Ti particles to deposit onto the sample surface. When the target area switches from the Ti target to the Mo target, the baffle 40 is closed, blocking the sample surface and preventing sputtered particles from reaching it. When the Mo target rotates to the target area, the baffle 40 is opened, exposing the sample surface and allowing sputtered Mo particles to deposit onto it. This process of short-duration, multiple-cycle sputtering on the Ti and Mo targets results in the formation of a TiMo alloy. The Ti element content in the TiMo alloy can be 3%, and the Mo element content can be 97%.
[0122] Example B:
[0123] like Figure 3 As shown, the first stage 20 includes three partitions 21, which respectively place Cu target, Sn target and Zn target, and CuSnZn alloy is prepared by alloy thin film deposition method provided in the embodiments of this application.
[0124] Specifically, the deposition rates of Cu, Sn, and Zn are first retrieved from the database. Then, based on the thickness of the pre-deposited CuSnZn alloy, the proportions of Cu, Sn, and Zn elements in the CuSnZn alloy, and the deposition rates of Cu, Sn, and Zn elements, the total sputtering time required on the Cu target, the total sputtering time required on the Sn target, and the total sputtering time required on the Zn target are calculated. Subsequently, the dwell time of the Cu target, the dwell time of the Sn target, and the dwell time of the Zn target in the focusing region of the first ion beam 11 are set. It is understandable that the ratio between the dwell time of the Cu target in the focusing region of the first ion beam 11, the dwell time of the Sn target in the focusing region of the first ion beam 11, and the dwell time of the Zn target in the focusing region of the first ion beam 11 is equal to the ratio between the calculated total sputtering time required on the Cu target, the total sputtering time required on the Sn target, and the total sputtering time required on the Zn target.
[0125] Then, the first ion source 10 in the ion beam deposition equipment is controlled to generate a first ion beam 11 which is focused on the target area, and the first stage 20 in the ion beam deposition equipment is controlled to rotate, so that the Cu target, Sn target and Zn target of the first stage 20 rotate in turn to stay in the target area for a period of time.
[0126] When the Cu target rotates to the target area, the shutter 40 is opened, at this time the shutter 40 exposes the sample surface, so that the sputtered Cu particles are deposited on the sample surface; when the target area corresponds to switching from the Cu target to the Sn target, the shutter 40 is closed, at this time the shutter 40 shields the sample surface, hindering the sputtered particles from reaching the sample surface; when the Sn target rotates to the target area, the shutter 40 is opened, at this time the shutter 40 exposes the sample surface, so that the sputtered Sn particles are deposited on the sample surface; when the target area corresponds to switching from the Sn target to the Zn target, the shutter 40 is closed, at this time the shutter 40 shields the sample surface, hindering the sputtered particles from reaching the sample surface; when the Zn target rotates to the target area, the shutter 40 is opened, at this time the shutter 40 exposes the sample surface, so that the sputtered Zn particles are deposited on the sample surface. In this way, short-time multiple cycle sputtering is carried out on the Cu target, the Sn target and the Zn target, and finally a CuSnZn alloy is formed, the proportion of Cu elements in the CuSnZn alloy can be 50%, and the proportions of Sn elements and Zn elements can each be 25%.
[0127] Embodiment C:
[0128] As shown in Figure 4 the first carrier 20 includes four sub-zones 21, which respectively place Fe target, Cr target, Ni target and Mo target, and an Fe-Cr-Ni-Mo alloy is prepared by using the alloy thin film deposition method provided in the embodiment.
[0129] Specifically, first, the deposition rates of Fe, Cr, Ni and Mo are called from the database, and then the total sputtering time required on the Fe target, the total sputtering time required on the Cr target, the total sputtering time required on the Ni target and the total sputtering time required on the Zn target are calculated according to the thickness of the pre-deposited Fe-Cr-Ni-Mo alloy, the proportions of Fe, Cr, Ni and Zn in the Fe-Cr-Ni-Mo alloy, and the deposition rates of Fe, Cr, Ni and Zn. Then, the time for the Fe target to stay in the focusing area of the first ion beam 11 each time, the time for the Cr target to stay in the focusing area of the first ion beam 11 each time, the time for the Ni target to stay in the focusing area of the first ion beam 11 each time, and the time for the Zn target to stay in the focusing area of the first ion beam 11 each time are set. It can be understood that the proportions among the time for the Fe target to stay in the focusing area of the first ion beam 11 each time, the time for the Cr target to stay in the focusing area of the first ion beam 11 each time, the time for the Ni target to stay in the focusing area of the first ion beam 11 each time, and the time for the Zn target to stay in the focusing area of the first ion beam 11 each time are equal to the proportions among the total sputtering time required on the Fe target, the total sputtering time required on the Cr target, the total sputtering time required on the Ni target and the total sputtering time required on the Zn target calculated.
[0130] Then, the first ion source 10 in the ion beam deposition device is controlled to generate the first ion beam 11 focused on the target area, and the first carrier 20 in the ion beam deposition device is controlled to rotate, so that the Fe target, the Cr target, the Ni target and the Mo target of the first carrier 20 are rotated to the target area in turn and stay for a period of time.
[0131] When the Fe target rotates to the target area, the shutter 40 is opened, at this time the shutter 40 exposes the sample surface, so that the sputtered Fe particles are deposited on the sample surface; when the target area corresponds to switching from the Fe target to the Cr target, the shutter 40 is closed, at this time the shutter 40 shields the sample surface, hindering the sputtered particles from reaching the sample surface; when the Cr target rotates to the target area, the shutter 40 is opened, at this time the shutter 40 exposes the sample surface, so that the sputtered Cr particles are deposited on the sample surface; when the target area corresponds to switching from the Cr target to the Ni target, the shutter 40 is closed, at this time the shutter 40 shields the sample surface, hindering the sputtered particles from reaching the sample surface; when the Ni target rotates to the target area, the shutter 40 is opened, at this time the shutter 40 exposes the sample surface, so that the sputtered Ni particles are deposited on the sample surface; when the target area corresponds to switching from the Ni target to the Mo target, the shutter 40 is closed, at this time the shutter 40 shields the sample surface, hindering the sputtered particles from reaching the sample surface; when the Mo target rotates to the target area, the shutter 40 is opened, at this time the shutter 40 exposes the sample surface, so that the sputtered Mo particles are deposited on the sample surface. In this way, short-time multiple cycle sputtering is carried out on the Fe target, the Cr target, the Ni target and the Mo target, and finally an Fe-Cr-Ni-Mo alloy is formed, and the proportions of Fe elements, Cr elements, Ni elements and Zn elements in the Fe-Cr-Ni-Mo alloy can all be 25%.
[0132] The various parts of the specification are described in a manner combining parallelism and progression, and each part focuses on the difference from other parts. The same or similar parts between the various parts can be referred to each other.
[0133] The above description of the disclosed embodiments is merely exemplary and the features recited in the various embodiments described in the specification can be substituted or combined so that those skilled in the art can implement or use the present application. Various modifications to the embodiments will be apparent to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. An ion beam deposition apparatus, characterized by, The ion beam deposition device comprises: a first ion source for generating a first ion beam focused on a target area; a first carrier comprising at least two sub-zones, different sub-zones are isolated from each other, the sub-zones are used for placing target materials, at least two sub-zones place different target materials, the first carrier is rotatable, and the target materials in each sub-zone are rotated to the target area in turn; a second carrier for carrying a sample, when the first ion beam is focused on the target material in the target area, the sputtered target material particles are deposited on the sample surface; a shutter, when the shutter is in a first state, the shutter blocks the sputtered target material particles from being deposited on the sample surface, and when the shutter is in a second state, the shutter allows the sputtered target material particles to be deposited on the sample surface.
2. The ion beam deposition apparatus according to claim 1, characterized in that, Further comprising: a heater for heating the sample on the second carrier.
3. The ion beam deposition apparatus of claim 1, wherein, Further comprising: a second ion source for generating a second ion beam to bombard the sample surface.
4. The ion beam deposition apparatus of claim 1, wherein, The shutter is rotatable; When the shutter is in a first state, the shutter blocks the sputtered target material particles from being deposited on the sample surface, and when the shutter is in a second state, the shutter allows the sputtered target material particles to be deposited on the sample surface, comprising: When the shutter is rotated to a first position, the shutter shields the sample surface, so that the shutter blocks the sputtered target material particles from being deposited on the sample surface; When the shutter is rotated to a second position, the shutter exposes the sample surface, so that the shutter allows the sputtered target material particles to be deposited on the sample surface.
5. The ion beam deposition apparatus of claim 1, wherein, The shutter comprises a plurality of sub-parts; When the shutter is in a first state, the shutter blocks the sputtered target material particles from being deposited on the sample surface, and when the shutter is in a second state, the shutter allows the sputtered target material particles to be deposited on the sample surface, comprising: When each of the sub-parts of the shutter is spliced together, the shutter shields the sample surface, so that the shutter blocks the sputtered target material particles from being deposited on the sample surface; When each of the sub-parts of the shutter is separated from each other until the shutter exposes the sample surface, the shutter allows the sputtered target material particles to be deposited on the sample surface.
6. A method of depositing an alloy thin film, characterized by, The alloy thin film deposition method is applied to the ion beam deposition device of any one of claims 1-5, and the method comprises: According to the thickness of the pre-deposited alloy thin film, the proportion of each alloy element in the alloy thin film, and the deposition rate of each alloy element, the sputtering time of each alloy element is calculated; The first ion source in the ion beam deposition device is controlled to generate a first ion beam focused on a target area, and the first carrier in the ion beam deposition device is controlled to rotate, so that the target materials on each sub-zone of the first carrier are rotated to the target area in turn and stay for a period of time, the target materials in the target area are sputtered and deposited on the sample surface located on the second carrier by the first ion beam, the target materials correspond to the alloy elements one by one, and the total time for each target material in the target area to be sputtered by the first ion beam is the calculated sputtering time of the corresponding alloy element. When the target region corresponds to the target material on one partition of the first stage, the shutter is controlled to be in a second state to allow the sputtered target material to deposit onto the sample surface.
7. The alloy thin film deposition method according to claim 6, wherein The ion beam deposition apparatus further comprises a heater, and the alloy thin film deposition method further comprises: The heater is controlled to heat the sample on the second stage so that the temperature of the sample is 100-1000°C, inclusive.
8. The alloy thin film deposition method of claim 6, wherein, The ion beam deposition apparatus further comprises a second ion source, and the alloy thin film deposition method further comprises: The second ion source is controlled to generate a second ion beam to bombard the sample surface.
9. The alloy thin film deposition method according to claim 6, wherein The shutter is rotatable; When the target region corresponds to the target material on one partition of the first stage, the shutter is controlled to be in a second state to allow the sputtered target material to deposit onto the sample surface, including: When the target region corresponds to the target material on one partition of the first stage, the shutter is controlled to be in a second state to allow the sputtered target material to deposit onto the sample surface, including: When the target region corresponds to the target material on one partition of the first stage, the shutter is controlled to be in a second state to allow the sputtered target material to deposit onto the sample surface, including:
10. The alloy thin film deposition method of claim 6, wherein The shutter comprises a plurality of subparts; When the target region corresponds to the target material on one partition of the first stage, the shutter is controlled to be in a second state to allow the sputtered target material to deposit onto the sample surface, including: When the target region corresponds to the target material on one partition of the first stage, the shutter is controlled to be in a second state to allow the sputtered target material to deposit onto the sample surface, including: When the target region corresponds to the target material on one partition of the first stage, the shutter is controlled to be in a second state to allow the sputtered target material to deposit onto the sample surface, including: