Substrate surface dynamic detection and planarization processing method

Abstract

The invention relates to the technical field of substrate surface dynamic detection, and discloses a substrate surface dynamic detection and planarization processing method, which comprises the following steps: step 1, substrate preparation: placing a substrate to be processed at a preset position in a vacuum cavity, and ensuring that the vacuum degree in the vacuum cavity is maintained below 1 atmospheric pressure so as to ensure the stability of a processing environment; and step 2, setting an ion gun device: starting the ion gun device, adjusting working parameters of the ion gun device according to treatment requirements, including gas type, flow and power of supplied electric energy, ensuring normal work of the ion gun device, and generating stable gas ion beams. According to the method, the glossiness of the metal circuit can be monitored in real time in the etching process through dynamic glossiness detection, so that excessive etching or insufficient etching is avoided, unnecessary processing time and material waste are reduced, and the overall processing efficiency is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of substrate surface dynamic detection, and particularly relates to a substrate surface dynamic detection and planarization processing method. BACKGROUND

[0002] Substrate surface dynamic detection mainly focuses on real-time monitoring of the quality and state of the substrate surface during the manufacturing process. This technology is crucial for ensuring product consistency and reliability. With the continuous development of semiconductor technology, the requirements for substrate surface quality are becoming increasingly high. Therefore, developing efficient and accurate substrate surface dynamic detection technology has become a research hotspot in the industry. In substrate surface dynamic detection, commonly used technologies include scanning white light interferometric microscopy, atomic force microscopy, and scanning electron microscopy. These technologies provide high-resolution surface images, helping engineers identify and analyze substrate surface defects, contamination, and roughness issues. By monitoring and analyzing these data in real time, manufacturers can identify potential problems and take appropriate measures in a timely manner, thereby ensuring product quality and performance.

[0003] In today's semiconductor and electronics industry, substrate surface planarization and metal line gloss detection are crucial process steps. These two steps are directly related to product quality, performance, and reliability. However, traditional chemical mechanical polishing methods have many problems, at least including the following:

[0004] (1) Environmental pollution: Traditional CMP methods usually require the use of a large amount of chemicals, including acidic or alkaline solutions. These solutions cause environmental pollution during use and disposal, which has a negative impact on the environment.

[0005] (2) High production cost: CMP methods require specialized equipment and a large amount of consumables, such as polishing pads and chemicals, which have relatively high costs. In addition, due to the large amount of energy consumed during polishing, CMP methods also have high energy consumption costs.

[0006] (3) Low efficiency: CMP methods are usually a relatively slow process, especially when polishing large-sized substrates, which results in longer production cycles and affects overall production efficiency.

[0007] (4) Subjective judgment and inaccuracy: Methods relying on manual detection are easily affected by the subjective judgment of operators, resulting in inconsistent detection results. Moreover, the accuracy of manual detection is affected by the skill level and fatigue of personnel, making it difficult to ensure the accuracy and consistency of detection results.

[0008] (5) Quality control challenges: Due to the limitations of manual detection methods, quality control faces serious challenges. Inaccurate detection results lead to unstable product quality, even quality problems, which in turn cause returns, causing significant losses to manufacturers.

[0009] Therefore, it is necessary to design a substrate surface dynamic detection and planarization processing method to solve the above problems. SUMMARY

[0010] The purpose of the present application is to solve the problems existing in the prior art, and a substrate surface dynamic detection and planarization processing method is proposed.

[0011] In order to achieve the above purpose, the present application adopts the following technical solutions:

[0012] The substrate surface dynamic detection and planarization processing method comprises the following steps:

[0013] Step 1, substrate preparation: place the substrate to be processed in a predetermined position in the vacuum chamber, ensure that the vacuum degree in the vacuum chamber is maintained below 1 atmosphere, and ensure the stability of the processing environment;

[0014] Step 2, set up ion gun device: start the ion gun device, and adjust its working parameters according to the processing requirements, including gas type, flow, power size of supply power, to ensure the normal work of the ion gun device and generate stable gas ion beam;

[0015] Step 3, dynamic gloss detection: start the metal gloss detector, adjust the bracket to ensure that the focusing mirror is aligned with the metal circuit of the circuit board to be measured, and the gloss recognition circuit controls the focusing mirror through the optical fiber line to shoot the detection light signal onto the metal circuit; the focusing mirror receives the reflected light signal of the metal circuit and inputs it to the optical fiber sensor through the optical fiber line, the optical fiber sensor amplifies the reflected light signal and detects its intensity, and then judges the corresponding gloss, and compares the detected gloss with the preset upper and lower limit values to judge whether the gloss of the metal circuit meets the requirements;

[0016] Step 4, processing result feedback: if the gloss of the metal circuit meets the requirements, continue to perform planarization processing; if the result does not meet the requirements, adjust the working parameters of the ion gun device and repeat step 3 for re-detection, and provide intuitive detection results through light display or other ways according to the detection results;

[0017] Step 5, substrate surface planarization processing: after ensuring that the gloss of the metal circuit meets the requirements, start using the ion gun device to perform etching processing on the substrate surface, dynamically adjust the working parameters of the ion gun device according to the etching effect to achieve the best planarization effect, and continuously detect the gloss during the etching process to ensure that the gloss of the metal circuit is not affected;

[0018] Step Six: Complete the process: Once the substrate surface has achieved the desired planarization effect, stop the ion gun device and remove the processed substrate from the vacuum chamber for further processing or testing.

[0019] As a preferred embodiment of the present invention, in step three, in the metal gloss detector, the gloss identification circuit is connected to the focusing lens through an optical fiber line, so that the detection light signal is projected onto the metal line of the circuit board under test. The gloss identification circuit judges the gloss level of the metal line based on the intensity of the reflected light signal. The gloss identification circuit monitors the gloss of the metal line in real time and compares the detected result with preset upper and lower limits. If the gloss is higher or lower than the preset range, the gloss identification circuit generates a corresponding control signal. Based on the feedback signal of the gloss identification circuit, the system automatically adjusts the power supply, gas flow rate, and working time parameters of the ion gun device. The adjustment of these parameters will affect the density or kinetic energy of gas ions during the etching process, thereby adjusting the etching process to achieve the goal of surface planarization.

[0020] As a preferred embodiment of the present invention, in step four, when the test result does not meet the requirements, the system automatically adjusts the operating parameters of the ion gun device, including adjusting the potential difference, gas flow rate, and working time, to change the density or kinetic energy of gas ions during the etching process. Then, the system re-executes the etching process and performs a second test. After parameter adjustment, the system tests the gloss of the metal circuit again. This process is repeated multiple times until the gloss of the metal circuit meets the preset requirements. Based on the latest test results, the system provides intuitive test results through indicator lights or other means. If the gloss of the metal circuit still does not meet the requirements, the unqualified indicator light connected to the normally open switch will continue to illuminate to remind the operator of the problem.

[0021] As a preferred embodiment of the present invention, in step five, after confirming that the gloss of the metal lines meets the requirements, the system starts the ion gun device to etch the substrate surface. During the etching process, the system continuously monitors the etching effect and dynamically adjusts the working parameters of the ion gun device according to the real-time gloss detection results. These parameters include the potential difference, gas flow rate, and working time to ensure that the etching process can achieve the best planarization effect. Based on the real-time etching effect and gloss detection results, the system automatically performs feedback adjustment and control, including adjusting the parameters of the ion gun device and changing the density, speed, or angle of the ion beam to optimize the etching process and ensure uniform planarization of the substrate surface.

[0022] The present invention has the following beneficial effects:

[0023] 1. Improved processing efficiency: Dynamic gloss detection allows for real-time monitoring of the gloss of metal lines during etching, thereby avoiding over-etching or under-etching, reducing unnecessary processing time and material waste, and improving overall processing efficiency.

[0024] 2. Ensure product quality: Real-time detection and adjustment can ensure that the planarization process on the substrate surface does not impair the gloss of the metal circuitry, thereby guaranteeing the overall quality of the product. This is especially important for electronic products that require specific gloss levels.

[0025] 3. Reduced production costs: Because the processing can be monitored and adjusted in real time, unnecessary material waste and reprocessing are reduced, thereby lowering production costs.

[0026] 4. Enhanced processing flexibility: The operating parameters of the ion gun device can be adjusted to adapt to different substrate materials and etching requirements, thus enhancing processing flexibility.

[0027] 5. Improve automation level: The entire processing can be automated through the control system, reducing the need for manual intervention and improving the automation level of the production line.

[0028] 6. Provide intuitive test results: Provide intuitive test results through indicator lights or other means, so that operators can quickly understand the processing situation and make corresponding adjustments.

[0029] 7. Optimize processing parameters: By recording key parameters and detection results throughout the entire processing, data analysis can be performed to further optimize processing parameters and improve processing effectiveness and efficiency. Attached Figure Description

[0030] Figure 1 This is a schematic diagram illustrating the steps of the substrate surface dynamic detection and planarization method proposed in this invention. Detailed Implementation

[0031] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments.

[0032] Reference Figure 1 A method for dynamic detection and planarization of substrate surface, comprising the following steps:

[0033] Step 1, Substrate Preparation: Place the substrate to be processed in the predetermined position inside the vacuum chamber, ensuring that the vacuum level inside the vacuum chamber is maintained below 1 atmosphere to guarantee the stability of the processing environment.

[0034] Step 2: Set up the ion gun device: Start the ion gun device and adjust its operating parameters according to the processing requirements, including the gas type, flow rate, and power supply, to ensure that the ion gun device works normally and generates a stable gas ion beam.

[0035] Step 3, Dynamic Gloss Detection: Activate the metallic gloss detector. Adjust the bracket to ensure the focusing lens is aligned with the metal lines of the circuit board under test. The gloss identification circuit controls the focusing lens via fiber optic lines, projecting the detection light signal onto the metal lines. The focusing lens receives the light signal reflected from the metal lines and inputs it to the fiber optic sensor via fiber optic lines. The fiber optic sensor amplifies the reflected light signal and detects its intensity, thereby determining the corresponding gloss level. The detected gloss level is compared with preset upper and lower limits to determine whether the gloss level of the metal lines meets the requirements. In Step 3, in the metallic gloss detector, the gloss identification circuit is connected to the focusing lens via fiber optic lines, enabling the detection... The light signal is projected onto the metal lines of the circuit board under test. The gloss identification circuit determines the gloss level of the metal lines based on the intensity of the reflected light signal. The gloss identification circuit monitors the gloss of the metal lines in real time and compares the detected results with preset upper and lower limits. If the gloss is higher or lower than the preset range, the gloss identification circuit generates a corresponding control signal. Based on the feedback signal from the gloss identification circuit, the system automatically adjusts the power supply, gas flow rate, and working time parameters of the ion gun device. The adjustment of these parameters will affect the density or kinetic energy of gas ions during the etching process, thereby adjusting the etching process to achieve the goal of surface planarization.

[0036] Step 4, Feedback on Processing Results: If the gloss of the metal circuit meets the requirements, continue with the planarization process; if the result does not meet the requirements, adjust the operating parameters of the ion gun device and repeat Step 3 for re-inspection. Based on the inspection results, provide intuitive inspection results through indicator lights or other means. In Step 4, when the inspection results do not meet the requirements, the system automatically adjusts the operating parameters of the ion gun device, including adjusting the potential difference, gas flow rate, and working time, to change the density or kinetic energy of gas ions during the etching process. Then, the system re-executes the etching process and performs re-inspection. After parameter adjustment, the system re-inspects the gloss of the metal circuit. This process is repeated multiple times until the gloss of the metal circuit meets the preset requirements. Based on the latest inspection results, the system provides intuitive inspection results through indicator lights or other means. If the gloss of the metal circuit still does not meet the requirements, the non-compliant indicator light connected to the normally open switch will remain lit to remind the operator of the problem.

[0037] Step 5, Substrate Surface Planarization: After ensuring the gloss of the metal lines meets the requirements, the ion gun device is used to etch the substrate surface. Based on the etching effect, the operating parameters of the ion gun device are dynamically adjusted to achieve the best planarization effect. During the etching process, gloss is continuously monitored to ensure the gloss of the metal lines is not affected. In Step 5, after confirming that the gloss of the metal lines meets the requirements, the system starts the ion gun device to etch the substrate surface. During the etching process, the system continuously monitors the etching effect and dynamically adjusts the operating parameters of the ion gun device based on the real-time gloss detection results. These parameters include the potential difference, gas flow rate, and working time to ensure the etching process achieves the best planarization effect. Based on the real-time etching effect and gloss detection results, the system automatically performs feedback adjustments and control, including adjusting the parameters of the ion gun device and changing the density, speed, or angle of the ion beam to optimize the etching process and ensure uniform planarization of the substrate surface.

[0038] Step Six: Complete the process: Once the substrate surface has achieved the desired planarization effect, stop the ion gun device and remove the processed substrate from the vacuum chamber for further processing or testing.

[0039] The specific working principle of this invention includes the following:

[0040] First, in step one, the substrate to be processed is placed in a vacuum chamber, ensuring the vacuum level is maintained below 1 atmosphere. This environmental condition helps reduce the interference of airborne impurities on the processing and also helps stabilize the processing environment, ensuring the accurate execution of subsequent steps. Next, in step two, the ion gun device is set up and activated, and its operating parameters are adjusted to generate a stable gas ion beam. This ion beam will be used in subsequent steps to etch the substrate surface to achieve the planarization goal. Step three is the dynamic gloss detection stage. The metallic gloss detector is activated to monitor the gloss of the metal lines on the substrate in real time. The gloss recognition circuit is connected to a focusing lens via an optical fiber line, projecting the detection light signal onto the metal lines and receiving the reflected light signal through an optical fiber sensor. After processing, the system can determine whether the gloss of the metal lines meets the preset requirements. In step four, the processing results are fed back to the system. If the gloss of the metal lines meets the requirements... The subsequent planarization process continues. If it does not meet the requirements, the operating parameters of the ion gun device will be adjusted, and the gloss detection and parameter adjustment process will be repeated until the gloss of the metal circuit reaches the expected level. Step five is the substrate surface planarization stage. After confirming that the gloss of the metal circuit meets the requirements, the ion gun device is started to etch the substrate surface. During the etching process, the system continuously monitors the etching effect and dynamically adjusts the operating parameters of the ion gun device according to the real-time gloss detection results to ensure that the etching process can achieve the best planarization effect. Finally, in step six, when the substrate surface reaches the expected planarization effect, the ion gun device stops working, and the processed substrate is taken out of the vacuum chamber for subsequent processing or testing. The entire system achieves the planarization of the substrate surface by dynamically monitoring the gloss during the processing and adjusting the processing parameters according to the detection results, thereby ensuring the quality and stability of the metal circuit.

[0041] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in the present invention, based on the technical solution and inventive concept of the present invention, should be covered within the scope of protection of the present invention.

Claims

1. A method for dynamic detection and planarization of substrate surface, characterized in that, Includes the following steps: Step 1, Substrate Preparation: Place the substrate to be processed in the predetermined position inside the vacuum chamber, ensuring that the vacuum level inside the vacuum chamber is maintained below 1 atmosphere to guarantee the stability of the processing environment. Step 2: Set up the ion gun device: Start the ion gun device and adjust its operating parameters according to the processing requirements, including the gas type, flow rate, and power supply, to ensure that the ion gun device works normally and generates a stable gas ion beam. Step 3, Dynamic Gloss Detection: Activate the metallic gloss detector. Adjust the bracket to ensure the focusing lens is aligned with the metal lines of the circuit board under test. The gloss recognition circuit controls the focusing lens through the fiber optic line to project the detection light signal onto the metal lines. The focusing lens receives the light signal reflected from the metal lines and inputs it to the fiber optic sensor through the fiber optic line. The fiber optic sensor amplifies the reflected light signal and detects its intensity, thereby determining the corresponding gloss level. The detected gloss level is compared with the preset upper and lower limits to determine whether the gloss level of the metal lines meets the requirements. Step 4: Feedback on processing results: If the gloss of the metal lines meets the requirements, continue with the planarization process; If the result is not satisfactory, adjust the operating parameters of the ion gun device and repeat step three for retesting. Based on the test results, provide intuitive test results through indicator lights or other means. Step 5, Substrate Surface Planarization: After ensuring that the gloss of the metal lines meets the requirements, the substrate surface is etched using an ion gun. The operating parameters of the ion gun are dynamically adjusted according to the etching effect to achieve the best planarization effect. During the etching process, gloss is continuously detected to ensure that the gloss of the metal lines is not affected. Step Six: Complete the Processing: Once the substrate surface has achieved the desired planarization effect, stop the operation of the ion gun device, remove the processed substrate from the vacuum chamber, and proceed with subsequent processing or testing.

2. The method for dynamic detection and planarization of substrate surface according to claim 1, characterized in that, In step three, in the metallic luster detector, the gloss identification circuit is connected to the focusing lens via an optical fiber line, so that the detection light signal is projected onto the metal line of the circuit board under test. The gloss identification circuit judges the gloss level of the metal line based on the intensity of the reflected light signal. The gloss identification circuit monitors the gloss of the metal line in real time and compares the detected result with preset upper and lower limits. If the gloss is higher or lower than the preset range, the gloss identification circuit generates a corresponding control signal. Based on the feedback signal from the gloss identification circuit, the system automatically adjusts the power supply, gas flow rate, and working time parameters of the ion gun device. The adjustment of these parameters will affect the density or kinetic energy of gas ions during the etching process, thereby adjusting the etching process to achieve the goal of surface planarization.

3. The method for dynamic detection and planarization of substrate surface according to claim 1, characterized in that, In step four, if the test results do not meet the requirements, the system automatically adjusts the operating parameters of the ion gun device, including adjusting the potential difference, gas flow rate, and working time, to change the density or kinetic energy of gas ions during the etching process. Then, the system re-executes the etching process and performs a second test. After parameter adjustment, the system tests the gloss of the metal circuit again. This process is repeated multiple times until the gloss of the metal circuit meets the preset requirements. Based on the latest test results, the system provides intuitive test results through indicator lights or other means. If the gloss of the metal circuit still does not meet the requirements, the non-compliance indicator connected to the normally open switch will remain lit to remind the operator of the problem.

4. The method for dynamic detection and planarization of substrate surface according to claim 1, characterized in that, In step five, after confirming that the gloss of the metal lines meets the requirements, the system starts the ion gun device to etch the substrate surface. During the etching process, the system continuously monitors the etching effect and dynamically adjusts the working parameters of the ion gun device according to the real-time gloss detection results. These parameters include the potential difference, gas flow rate, and working time to ensure that the etching process can achieve the best planarization effect. Based on the real-time etching effect and gloss detection results, the system automatically performs feedback adjustment and control, including adjusting the parameters of the ion gun device and changing the density, speed, or angle of the ion beam to optimize the etching process and ensure uniform planarization of the substrate surface.

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