Resistance correction structure and method of thin film temperature sensor

Abstract

The invention discloses a resistance correction structure and method of a thin film temperature sensor, and relates to the technical field of temperature sensors, the resistance correction structure comprises a plurality of resistance correction units connected in series, and each resistance correction unit comprises a plurality of resistance correction resistors connected in parallel and a bypass wire which is connected in parallel with the resistance correction resistors and can be broken by laser. And the resistance correction resistance value of the resistance correction unit is the resistance value difference of the bypass wire in the open-circuit state and the closed-circuit state. All the units have different preset resistance values, and the minimum resistance value is smaller than or equal to the required resistance correction precision. By combining the resistance correction units with different resistance values, adjustment of any resistance value can be realized within a target range. During resistance calibration, the current resistance value of the sensor is measured firstly, the resistance value needing to be adjusted is calculated, and then the corresponding bypass wire is selectively broken through laser. The non-ablation mode that the bypass wire is broken through laser is adopted, the problems that a heat affected zone and precision are limited in traditional laser trimming are solved, and the method has the advantages of being high in precision, simple in process, good in reliability, low in cost and the like.

Description

Technical Field

[0001] This invention relates to the field of temperature sensor technology, and in particular to a resistance calibration structure and method for a thin-film temperature sensor. Background Technology

[0002] Temperature sensors, as key devices that sense temperature changes and convert them into usable signals, play an irreplaceable role in industrial process control, laboratory equipment, constant temperature chambers, and life and health monitoring. Among them, resistance temperature sensors (RTS) have become the preferred solution for high-precision temperature measurement due to their high accuracy, good stability, and excellent linearity. RTS temperature sensors primarily measure temperature based on the characteristic that the resistance of a metallic material changes with temperature. Platinum resistance thermometers (such as Pt100 and Pt1000) are typical examples, with resistances of 100Ω and 1000Ω respectively at 0℃, and temperature coefficients of 0.385Ω / ℃ and 3.85Ω / ℃ respectively, exhibiting excellent temperature response characteristics. With the development of devices towards miniaturization and high integration, temperature sensors are showing a trend towards miniaturization and thin-film flexibility.

[0003] Currently, the fabrication processes of resistance temperature sensors can be mainly divided into three categories: (1) Wire-wound structure: High-purity platinum wire is wound on an insulating skeleton such as ceramic, glass or mica, and then encapsulated after heat treatment and welding of leads. This structure is simple and low in cost, but it has poor stability under vibration environment, and is also large in size and slow in response speed.

[0004] (2) Thin film structure: A platinum film (usually less than 2 μm thick) is attached to a ceramic substrate using vacuum sputtering or deposition processes. The resistance is precisely adjusted by laser resistance calibration, and finally the leads are fixed with glass paste and sintered. Although this structure achieves miniaturization, the preparation cost is high, the cycle is long, and the temperature measurement range is relatively narrow.

[0005] (3) Thick film structure: Platinum paste is coated onto the substrate by screen printing, and then dried and sintered to form a resistive layer. The thick film process has lower cost and shorter cycle time, making it suitable for mass production, but it also requires laser resistance calibration to achieve an initial fixed resistance value.

[0006] To achieve high sensitivity and signal-to-noise ratio, reduce self-heating effects, and minimize the impact of wire resistance on testing, resistance temperature sensors (RTS) typically require a large initial resistance. However, high resistance often leads to significant fluctuations, primarily due to limited fabrication precision. Temperature sensors based on nanoimprint technology achieve additive manufacturing by making the wire resistance longer and thinner while utilizing nanoimprint technology to ensure extremely high fabrication precision. This fabrication method offers unique advantages such as low process cost, short fabrication cycle, mass production, miniaturization, thin-film fabrication, and array fabrication.

[0007] Although nanoimprint lithography has made significant progress in the fabrication of temperature sensors, a subsequent resistance calibration process is still needed to achieve an initial fixed resistance value. Current resistance calibration processes mainly employ laser trimming technology, which precisely adjusts the resistance value by laser ablation of the resistive material. However, this process suffers from the following technical bottlenecks: (1) Limited precision: During laser adjustment, the ablation precision of the resistive material is affected by factors such as laser power and focusing precision, making it difficult to achieve sub-micron level precise control, which leads to limited resistance adjustment precision; (2) Heat-affected zone problem: The high temperature generated during laser ablation will form a heat-affected zone around the resistive material, which will change the microstructure and electrical properties of the material and affect the long-term stability and temperature coefficient consistency of the sensor. (3) Complex process: The resistance calibration process requires multiple measurements and adjustments, the process steps are complicated, the production efficiency is low, and it is difficult to meet the needs of mass production; (4) High cost: Laser refraction equipment requires a large investment and has high maintenance costs, and also requires high technical skills from operators, which increases manufacturing costs; (5) Reliability issues: Laser ablation may introduce defects such as microcracks and stress concentration, which reduce the mechanical strength and long-term reliability of the sensor.

[0008] In summary, existing resistance calibration processes still have many shortcomings in terms of accuracy, efficiency, cost, and reliability. There is an urgent need to develop a new resistance calibration structure and method to solve the above-mentioned technical bottlenecks and meet the development needs of high-precision thin-film temperature sensors. Summary of the Invention

[0009] The purpose of this invention is to provide a resistance calibration structure and method for a thin-film temperature sensor, so as to solve the problems existing in the prior art and improve the accuracy and reliability of resistance calibration.

[0010] To achieve the above objectives, the present invention provides the following solution: This invention provides a calibration structure for a thin-film temperature sensor, comprising multiple calibration units connected in series. Each calibration unit includes a bypass wire and at least one calibration resistor connected in parallel with the bypass wire. Different calibration resistors within the same calibration unit are connected in parallel with each other. The bypass wire can be broken by a laser. The calibration resistance value of each calibration unit is the difference between the resistance values ​​of the calibration unit in the open circuit state and the closed circuit state of the bypass wire. The resistance values ​​of all the resistance calibration units are divided into multiple types, among which the smallest resistance value is less than or equal to the required resistance calibration accuracy; each resistance value has one or more corresponding resistance calibration units; By combining the resistance values ​​of all or part of the resistance calibration units, any resistance value within the target resistance calibration range can be obtained, and the accuracy of the arbitrary resistance value is greater than or equal to the resistance calibration accuracy.

[0011] Preferably, it also includes a substrate, on which all the impedance correction units are disposed.

[0012] Preferably, the calibration resistor is a resistance wire, and a first groove is provided on the substrate corresponding to each resistance wire. The resistance wire is made of a conductive temperature-sensitive material filled in the corresponding first groove. A second groove is provided on the substrate corresponding to each bypass wire, and the bypass wire is made of a conductive temperature-sensitive material filled in the corresponding second groove.

[0013] Preferably, both the first groove and the second groove are fabricated using nanoimprint lithography or photolithography.

[0014] Preferably, the target resistance range is 0Ω~100Ω; the resistance accuracy is ±0.01Ω. The resistance values ​​are 10Ω, 20Ω, 50Ω, 1Ω, 2Ω, 5Ω, 0.2Ω, 0.1Ω, 0.5Ω, 0.02Ω, 0.01Ω and 0.05Ω; There are two calibration units for a resistance value of 10Ω; two calibration units for a resistance value of 20Ω; one calibration unit for a resistance value of 50Ω; two calibration units for a resistance value of 1Ω; two calibration units for a resistance value of 2Ω; one calibration unit for a resistance value of 5Ω; two calibration units for a resistance value of 0.2Ω; two calibration units for a resistance value of 0.1Ω; one calibration unit for a resistance value of 0.5Ω; two calibration units for a resistance value of 0.02Ω; five calibration units for a resistance value of 0.01Ω; and one calibration unit for a resistance value of 0.05Ω.

[0015] Preferably, the resistance value of the corresponding calibration resistor is changed by altering the depth, width, and / or length of the first groove.

[0016] Preferably, the substrate is a rigid substrate or a flexible substrate; the rigid substrate is made of silicon or ceramic; the flexible substrate is made of PET, PEN, PVB, PVA, PU, ​​TPU, PI, PVDF, PDMS or Ecoflex.

[0017] Preferably, the laser is an ultraviolet laser, a visible laser, a near-infrared laser, or a mid-to-far-infrared laser, and the energy range of the laser is 0~3W.

[0018] Preferably, after the conductive temperature-sensitive material is filled into the second groove, it needs to undergo thermal annealing and / or xenon lamp sintering treatment.

[0019] The present invention also provides a method for calibrating the resistance of a thin-film temperature sensor, based on the above-described calibrating structure of the thin-film temperature sensor, comprising the following steps: (1) Measure the current resistance value of the thin-film temperature sensor with the said resistance correction structure, and determine the required adjustment resistance value by the difference between the target resistance value to be adjusted and the current resistance value; (2) The adjustment resistance value is obtained by combining the resistance values ​​of all or part of the resistance adjustment units, and the resistance adjustment unit that needs to disconnect the bypass wire is selected. (3) Use a laser to break the bypass wire in the selected resistance correction unit to complete the resistance correction.

[0020] The present invention achieves the following technical effects compared to the prior art: The present invention discloses a resistance calibration structure and method for a thin-film temperature sensor. This structure employs a design with multiple resistance calibration units connected in series and multiple resistance calibration resistors connected in parallel within each unit, combined with a laser-based bypass wire breaking mechanism, achieving high-precision resistance calibration. The calibration accuracy can reach ±0.01Ω, representing an improvement of more than an order of magnitude compared to traditional laser trimming techniques. This structural design allows any resistance value within the target calibration range of 0Ω to 100Ω to be achieved through combinations of calibration resistance values, meeting the stringent requirements of high-precision temperature sensors. Traditional laser trimming techniques adjust resistance by laser ablation of the resistive material, which creates a heat-affected zone around the resistive material, altering its microstructure and electrical properties, and affecting the long-term stability and temperature coefficient consistency of the sensor. The present invention uses a laser-based bypass wire breaking calibration method, avoiding direct ablation of the resistive material, fundamentally eliminating the heat-affected zone problem, and significantly improving the long-term stability and temperature coefficient consistency of the sensor. The calibration process only requires measuring the current resistance value, calculating the required adjustment resistance value, and then using a laser to break the bypass wire in the selected resistance calibration unit to complete the calibration. Compared to the cumbersome process of traditional laser trimming technology that requires multiple measurements and adjustments, the resistance calibration method of this invention greatly simplifies the process steps, significantly improves production efficiency, and can meet the needs of mass production.

[0021] Furthermore, the calibration structure of this invention employs nanoimprinting or photolithography to fabricate the first and second grooves, resulting in low processing costs and short fabrication cycles, making it suitable for mass production. Simultaneously, the calibration process eliminates the need for complex laser power control and focusing precision adjustment, lowering the technical requirements for operators and reducing equipment investment and maintenance costs. The overall manufacturing cost is significantly lower than traditional laser calibration equipment. Since the calibration process does not involve the ablation of resistive materials, it avoids the introduction of defects such as microcracks and stress concentration, significantly improving the sensor's mechanical strength and long-term reliability. The bypass wire, filled in the second groove with a conductive temperature-sensitive material, is firmly bonded to the substrate after thermal annealing or xenon lamp sintering, further enhancing the sensor's reliability. The calibration structure can be mounted on a rigid or flexible substrate. The substrate material can be selected from various materials such as silicon, ceramics, PET, PEN, PVB, PVA, PU, ​​TPU, PI, PVDF, PDMS, or Ecoflex, adapting to different application scenarios. The laser can be ultraviolet, visible, near-infrared, or mid-to-far-infrared, with an energy range of 0-3W, offering broad applicability. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0023] Figure 1 This is a schematic diagram of the resistance calibration structure of the thin-film temperature sensor of the present invention; Figure 2 This is a schematic diagram of the first resistance calibration region in the resistance calibration structure of the thin-film temperature sensor of the present invention; Figure 3 This is a schematic diagram of the substrate structure in the resistance calibration structure of the thin-film temperature sensor of the present invention; Figure 4 This is a partial structural schematic diagram of the resistance calibration structure of the thin-film temperature sensor of the present invention; In the figure: 1. Substrate; 2. Resistance calibration unit; 3. Resistance calibration resistor; 4. Bypass wire; 5. First groove; 6. Second groove; 7. First electrode; 8. First resistance calibration region; 9. Temperature-sensitive region; 10. Second resistance calibration region; 11. Second electrode. Detailed Implementation

[0024] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0025] The purpose of this invention is to provide a resistance calibration structure and method for a thin-film temperature sensor, so as to solve the problems existing in the prior art and improve the accuracy and reliability of resistance calibration.

[0026] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0027] Example 1 like Figures 1 to 4 As shown, this invention provides a calibration structure for a thin-film temperature sensor, including a substrate 1 and a plurality of calibration units 2 connected in series on the substrate 1. Each calibration unit 2 includes a bypass wire 4 and at least one calibration resistor 3 connected in parallel with the bypass wire. Different calibration resistors 3 within the same calibration unit 2 are connected in parallel with each other. It should be noted that each bypass wire 4 is connected in parallel with all the calibration resistors 3 within its own calibration unit 2, rather than with all the calibration resistors 3 of the entire calibration structure. The bypass wire 4 can be broken by a laser. The calibration resistance value of each calibration unit 2 is the difference between the resistance values ​​of the bypass wire 4 in the open-circuit state and the closed-circuit state of the calibration unit 2.

[0028] When the resistance of the calibrating resistor 3 is large, in the closed state, the current will preferentially flow through the bypass wire 4 and bypass the parallel calibrating resistor 3. In the short-circuit state, the current can only flow through each of the calibrating resistors 3 in the calibrating unit 2. The difference in resistance between the two states is the calibrating resistance value of the calibrating unit 2. When the resistance of the calibrating resistor 3 is small, the overall resistance of the calibrating unit 2 will also differ between the open-circuit state and the closed state of the bypass wire 4. This difference is the overall calibrating resistance value of the calibrating unit 2.

[0029] The substrate 1 is a flexible substrate. The calibration resistor 3 is a resistance wire, and a first groove 5 is provided on the substrate 1 corresponding to each resistance wire. The first groove 5 is fabricated by nanoimprint lithography or photolithography. The resistance wire is composed of a conductive temperature-sensitive material filled in the first groove 5. A second groove 6 is provided on the substrate 1 corresponding to each bypass wire 4. The second groove 6 is also fabricated by nanoimprint lithography or photolithography, with a depth of 5μm, a width of 20μm, and a length of 50μm. The bypass wire 4 is composed of a conductive temperature-sensitive material filled in the second groove 6, with a filling thickness of 2μm. After the conductive temperature-sensitive material is filled in the second groove 6, it is treated by one or a combination of thermal annealing and xenon lamp sintering. In this embodiment, the conductive temperature-sensitive material used in the calibration resistor 3 is the same as that used in the bypass wire 4, which is platinum.

[0030] All the resistance values ​​of the resistance calibration unit 2 are divided into multiple types. Among them, the smallest resistance value is less than or equal to the required resistance calibration accuracy. Each resistance value has one or more corresponding resistance calibration units 2, that is, the resistance value of the resistance calibration unit 2 is its corresponding resistance value.

[0031] In this embodiment, the target resistance range is 0Ω~100Ω, and the resistance accuracy is ±0.01Ω. The resistance values ​​are divided into 12 types: 10Ω, 20Ω, 50Ω, 1Ω, 2Ω, 5Ω, 0.2Ω, 0.1Ω, 0.5Ω, 0.02Ω, 0.01Ω, and 0.05Ω. Of all the resistance calibration units 2, two have a resistance value of 10Ω, two have a resistance value of 20Ω, one has a resistance value of 50Ω, two have a resistance value of 1Ω, two have a resistance value of 2Ω, one has a resistance value of 5Ω, two have a resistance value of 0.2Ω, two have a resistance value of 0.1Ω, one has a resistance value of 0.5Ω, two have a resistance value of 0.02Ω, five have a resistance value of 0.01Ω, and one has a resistance value of 0.05Ω. Through the above combination of resistance calibration units 2, an arbitrary resistance value within the target resistance calibration range of 0Ω to 100Ω can be achieved, with a calibration accuracy of 0.01 ohms. This also simplifies the number of calibration steps, thereby reducing the area of ​​the calibration zone and ultimately improving calibration efficiency and accuracy.

[0032] It is worth noting that in practical applications, the resistance value of the corresponding calibration resistor 3 can be changed by altering the depth, width, and length of the first groove 5.

[0033] Furthermore, in this embodiment, in order to make the resistance of the resistance unit 2 reach a relatively small value, on the one hand, the number of parallel resistance resistors 3 can be increased. More parallel resistance resistors can reduce the overall resistance of the resistance unit 2. On the other hand, the resistance of the resistance resistor 3 can be reduced by increasing the width of the first groove 5, i.e. the width of the resistance resistor 3.

[0034] In this embodiment, the width of the first groove 5 and the second groove 6 is both <10um, the distance between the calibration resistor 3 and the bypass wire or the adjacent calibration resistor 3 is <3um, and the dimensional accuracy deviation of the first groove 5 and the second groove 6 is within 100nm.

[0035] In this embodiment, all calibration units 2 are divided into two calibration regions distributed on the substrate 1, namely the first calibration region 8 and the second calibration region 10. All calibration units 2 in the first calibration region 8 are connected in series, and all calibration units 2 in the second calibration region 10 are connected in series. In addition to the substrate 1, the first calibration region 8, and the second calibration region 10, the thin-film temperature sensor in this embodiment also includes a first electrode 7, a temperature-sensitive region 9, and a second electrode 11 respectively disposed on the substrate 1. The first electrode 7, the first calibration region 8, the temperature-sensitive region 9, the second calibration region 10, and the second electrode 11 are connected in series. The temperature-sensitive region 9 is a relatively long resistance line distributed in a serpentine pattern. The resistance line of the temperature-sensitive region 9 is similar to the resistance line of the calibration resistor 3, and is also formed by filling a groove in the substrate 1 with a conductive temperature-sensitive material. It is worth noting that the first calibration region 8 includes multiple calibration units, but to ensure image clarity, in... Figure 2 Only two of the impedance calibration units are marked in the text.

[0036] Example 2 This embodiment provides a resistance calibration method for a thin-film temperature sensor, based on the resistance calibration structure of Embodiment 1, including the following steps: (1) Measure the current resistance value of the thin-film temperature sensor with a resistance calibration structure, and determine the required adjustment resistance value by the difference between the target resistance value and the current resistance value. For example, if the current resistance value is 945.5Ω and the target resistance value is 1000Ω, then the required adjustment resistance value is 45.5Ω; (2) The adjustment resistance value is obtained by combining all or part of the adjustment resistance values ​​of the adjustment unit 2, and the adjustment unit 2 that needs to be disconnected by the bypass wire is selected. For the adjustment resistance value of 44.5Ω, two 20Ω, one 5Ω and five 0.1Ω adjustment units can be selected, that is, two adjustment units 2 with a resistance value of 20Ω, one adjustment unit 2 with a resistance value of 5Ω and five adjustment units 2 with a resistance value of 0.5Ω are selected; (3) The bypass wire 4 in the selected resistance adjustment unit 2 is broken by laser to complete the resistance adjustment. The laser used is an ultraviolet laser with a wavelength of 355nm, a laser energy of 1W, a spot diameter of 20μm, a repetition frequency of 50kHz, and a resistance adjustment temperature controlled at 350℃~450℃. After the bypass wire 4 is broken by laser, the current can only flow through the resistance adjustment resistor 3, and the resistance value of the resistance adjustment unit 2 increases, thereby achieving precise adjustment of the resistance value.

[0037] It is worth noting that disconnecting the bypass wire 4 often increases the resistance of the corresponding calibration unit 2. Therefore, to facilitate calibration, the resistance of the thin-film temperature sensor needs to be less than the target resistance value during manufacturing. This allows the resistance value of the thin-film temperature sensor to be calibrated to the target resistance value by disconnecting the bypass wire 4 in the calibration unit 2. However, if the current resistance value of the thin-film temperature sensor is greater than the target resistance value, the resistance of the corresponding calibration unit 2 can be reduced by increasing the cross-sectional area of ​​the calibration resistor 3 by galvanizing a portion of the calibration resistor 3 or by continuing to coat it with conductive temperature-sensitive material. This reduces the overall resistance value of the thin-film temperature sensor for calibration.

[0038] Specific examples have been used to illustrate the principles and implementation methods of this invention. The descriptions of the above embodiments are only for the purpose of helping to understand the method and core ideas of this invention. Furthermore, those skilled in the art will recognize that, based on the ideas of this invention, there will be changes in the specific implementation methods and application scope. Therefore, the content of this specification should not be construed as a limitation of this invention.

Claims

1. A resistance calibration structure for a thin-film temperature sensor, characterized in that: It includes multiple resistance correction units connected in series. Each resistance correction unit includes a bypass wire and at least one resistance correction resistor connected in parallel with the bypass wire. Different resistance correction resistors within the same resistance correction unit are connected in parallel with each other. The bypass wire can be broken by a laser. The resistance correction value of each resistance correction unit is the difference between the resistance values ​​of the resistance correction unit when the bypass wire is in an open circuit state and when it is in a closed circuit state. The resistance values ​​of all the aforementioned resistance calibration units are of various types, wherein the smallest resistance value is less than or equal to the required resistance calibration accuracy; each resistance value has one or more corresponding resistance calibration units. By combining the resistance values ​​of all or part of the resistance calibration units, any resistance value within the target resistance calibration range can be obtained, and the accuracy of the arbitrary resistance value is greater than or equal to the resistance calibration accuracy.

2. The resistance calibration structure of the thin-film temperature sensor according to claim 1, characterized in that: It also includes a substrate, on which all the aforementioned resistance correction units are disposed.

3. The resistance calibration structure of the thin-film temperature sensor according to claim 2, characterized in that: The calibration resistor is a resistance wire, and a first groove is provided on the substrate for each resistance wire. The resistance wire is made of a conductive temperature-sensitive material filled in the corresponding first groove. A second groove is provided on the substrate corresponding to each bypass wire, and the bypass wire is made of a conductive temperature-sensitive material filled in the corresponding second groove.

4. The resistance calibration structure of the thin-film temperature sensor according to claim 3, characterized in that: Both the first groove and the second groove are fabricated using nanoimprint lithography or photolithography.

5. The resistance calibration structure of the thin-film temperature sensor according to claim 1, characterized in that: The target resistance range is 0Ω~100Ω; the resistance accuracy is ±0.01Ω. The resistance values ​​are 10Ω, 20Ω, 50Ω, 1Ω, 2Ω, 5Ω, 0.2Ω, 0.1Ω, 0.5Ω, 0.02Ω, 0.01Ω and 0.05Ω; There are two calibration units for a calibration resistance value of 10Ω; two calibration units for a calibration resistance value of 20Ω; one calibration unit for a calibration resistance value of 50Ω; two calibration units for a calibration resistance value of 1Ω; two calibration units for a calibration resistance value of 2Ω; one calibration unit for a calibration resistance value of 5Ω; and two calibration units for a calibration resistance value of 0.2Ω. A resistance value of 0.1Ω corresponds to two resistance adjustment units; a resistance value of 0.5Ω corresponds to one resistance adjustment unit; and a resistance value of 0.02Ω corresponds to two resistance adjustment units. A resistance value of 0.01Ω corresponds to 5 resistance adjustment units; a resistance value of 0.05Ω corresponds to 1 resistance adjustment unit.

6. The resistance calibration structure of the thin-film temperature sensor according to claim 3, characterized in that: The resistance value of the corresponding calibration resistor can be changed by altering the depth, width, and / or length of the first groove.

7. The resistance calibration structure of the thin-film temperature sensor according to claim 2, characterized in that: The substrate may be a rigid substrate or a flexible substrate; the rigid substrate may be made of silicon or ceramic; the flexible substrate may be made of PET, PEN, PVB, PVA, PU, ​​TPU, PI, PVDF, PDMS or Ecoflex.

8. The resistance calibration structure of the thin-film temperature sensor according to claim 1, characterized in that: The laser is an ultraviolet laser, a visible laser, a near-infrared laser, or a mid-to-far-infrared laser, and the energy range of the laser is 0W to 3W.

9. The resistance calibration structure of the thin-film temperature sensor according to claim 1, characterized in that: After the conductive temperature-sensitive material is filled into the second groove, it needs to undergo thermal annealing and / or xenon lamp sintering.

10. A method for calibrating the resistance of a thin-film temperature sensor, characterized in that, The resistance calibration structure of the thin-film temperature sensor according to any one of claims 1-9 includes the following steps: (1) Measure the current resistance value of the thin-film temperature sensor with the said resistance correction structure, and determine the required adjustment resistance value by the difference between the target resistance value to be adjusted and the current resistance value; (2) The adjustment resistance value is obtained by combining the resistance values ​​of all or part of the resistance adjustment units, and the resistance adjustment unit that needs to disconnect the bypass wire is selected. (3) Use a laser to break the bypass wire in the selected resistance correction unit to complete the resistance correction.

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