Exposure control method, device and equipment of photoetching machine and storage medium
By preheating the photomask and adjusting the exposure parameters before exposure, the problem of precision degradation caused by thermal deformation of the photomask was solved, and the process stability and production capacity of the lithography machine were improved.
Patent Information
- Application Number
- CN202610187599.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-02-09
- Publication Date
- 2026-03-17
AI Technical Summary
In existing technologies, the problem of precision degradation caused by thermal deformation of the photomask affects the lithography quality, while the cooling and waiting process leads to a decrease in production capacity, which is difficult to solve effectively.
Before exposure begins, the photomask is heated by a preheating device to reach its maximum deformation value, and the exposure parameters are adjusted according to the pattern size deviation to ensure stable photomask deformation during exposure.
This improves the process stability and capacity of the lithography machine, avoids continuous deformation of the photomask during the exposure process, ensures that the dimensional deviation between the exposure pattern and the preset pattern of the photomask is controllable, and shortens the exposure time of each wafer.
Smart Images
Figure CN121680002A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor manufacturing technology, and more specifically, to an exposure control method, apparatus, device, and storage medium for a lithography machine. Background Technology
[0002] In the semiconductor manufacturing field, photolithography is the core process for transferring chip circuit patterns. The photolithography machine precisely projects the design pattern onto the wafer surface using a reticle. Its exposure accuracy and production efficiency directly determine the chip yield and manufacturing cost. Among them, the reticle, as a key component carrying the circuit pattern, continuously absorbs the exposure energy of the photolithography machine during the exposure process, causing its temperature to gradually rise and resulting in thermal deformation.
[0003] Thermal deformation of the photomask has a particularly significant impact on lithography quality. It directly leads to a significant increase in the deviation between wafer overlay accuracy and the magnification of a single exposure area, causing the alignment and dimensional accuracy of circuit patterns to deviate from design standards, ultimately resulting in chip malfunction or performance degradation. To address this issue, existing technologies typically employ an interrupted exposure-mask cooling process. After continuous exposure for a period of time, the lithography machine operation is paused, and exposure is resumed only after the photomask has naturally cooled to a stable temperature, thereby suppressing the continued escalation of thermal deformation.
[0004] However, the aforementioned cooling-waiting scheme presents irreconcilable technical contradictions. On the one hand, the cooling process consumes a significant amount of equipment operating time, leading to a substantial decrease in the lithography machine's throughput. On the other hand, even with cooling-waiting, the photomask may still experience cumulative deformation during multiple heating-cooling cycles, and the cooled photomask will still undergo a rapid temperature rise during the initial stage of re-exposure, resulting in decreased precision consistency between wafers and between areas exposed in a single exposure. Therefore, effectively addressing the precision degradation caused by photomask thermal deformation while avoiding the negative impact of cooling-waiting on production capacity has become a critical technical bottleneck that urgently needs to be overcome in this field. Summary of the Invention
[0005] This application addresses the shortcomings of the prior art by providing an exposure control method, apparatus, device, and storage medium for a lithography machine, in order to solve the problems existing in the prior art.
[0006] The technical solution adopted in the embodiments of this application is as follows: In a first aspect, embodiments of this application provide an exposure control method for a lithography machine, comprising: Before exposure begins, a preheating device is controlled to heat the photomask of the lithography machine, so that the photomask reaches its maximum deformation value after heating. The preheating device includes a sealed cavity, a base located inside the sealed cavity and fixedly connected to the bottom of the sealed cavity, a support frame located on the base and used to support the photomask, and a light source located inside the sealed cavity and above the support frame. The light source is fixed to the top surface of the sealed cavity, and the exposure intensity of the light source is the same as the exposure intensity of the light source of the lithography machine. The heated photomask is transferred into the lithography machine, and the test wafer is exposed using the heated photomask according to the preset exposure parameters of the lithography machine. Obtain the pattern size deviation between the exposure pattern on the test wafer and the preset pattern of the photomask; The preset exposure parameters of the lithography machine are adjusted according to the pattern size deviation. During the exposure process, the heated photomask is used to expose the wafer to be processed according to the adjusted exposure parameters.
[0007] In one embodiment, the preheating control device heats the photomask of the lithography machine, including: Acquire data on the deformation process of the photomask during the production process; Based on the deformation process data, obtain the heating control parameters corresponding to the maximum deformation value; The preheating device is controlled to heat the photomask according to the heating control parameters.
[0008] In one embodiment, the deformation process data includes: deformation values of multiple wafers; obtaining the heating control parameters corresponding to the maximum deformation value based on the deformation process data includes: Based on the deformation values of the plurality of wafers, determine the number of target wafers corresponding to the maximum deformation value of the photomask; The heating control parameters are determined based on the number of target wafers.
[0009] In one embodiment, determining the heating control parameters based on the target number of wafers includes: The heating duration is determined based on the number of target wafers and the exposure time of a single wafer; The heating control parameters are determined based on the heating duration.
[0010] In one embodiment, the heating control parameters further include: the preset exposure intensity of the lithography machine; The step of controlling the preheating device to heat the photomask according to the heating control parameters includes: Based on the preset exposure intensity and the heating time, the light source in the preheating device is controlled to heat the photomask placed in the preheating device.
[0011] In one embodiment, adjusting the preset exposure parameters of the lithography machine based on the pattern size deviation includes: Obtain exposure parameter correction values for multiple exposure regions within a single wafer based on the pattern size deviation setting; Based on the exposure parameter correction values of the multiple exposure areas, the exposure parameters of the corresponding exposure areas in the preset exposure parameters of the lithography machine are adjusted.
[0012] In one embodiment, the exposure parameters include: offset parameters, magnification parameters, and rotation parameters; The step of adjusting the exposure parameters of the corresponding exposure regions in the preset exposure parameters of the lithography machine according to the exposure parameter correction values of the multiple exposure regions includes: Based on the offset parameter correction values, magnification parameter correction values, and rotation parameter correction values of the multiple exposure areas, the offset parameter, magnification parameter, and rotation parameter of the corresponding exposure area in the preset exposure parameters of the lithography machine are adjusted.
[0013] Secondly, embodiments of this application provide an exposure control device for a lithography machine, comprising: A heating module is used to control a preheating device to heat the photomask of the lithography machine before exposure begins, so that the photomask reaches its maximum deformation value after heating. The preheating device includes a sealed cavity, a base located inside the sealed cavity and fixedly connected to the bottom of the sealed cavity, a support frame located on the base and used to support the photomask, and a light source located inside the sealed cavity and above the support frame. The light source is fixed to the top surface of the sealed cavity, and the exposure intensity of the light source is the same as the exposure intensity of the light source of the lithography machine. The first exposure module is used to transfer the heated photomask into the lithography machine and expose the test wafer using the heated photomask according to the preset exposure parameters of the lithography machine. The acquisition module is used to acquire the pattern size deviation between the exposure pattern on the test wafer and the preset pattern of the photomask; An adjustment module is used to adjust the preset exposure parameters of the lithography machine according to the pattern size deviation; The second exposure module is used to expose the wafer to be processed using the heated photomask according to the adjusted exposure parameters during the exposure process.
[0014] Thirdly, embodiments of this application provide a control device, including: a processor, a storage medium, and a bus. The storage medium stores program instructions executable by the processor. When the control device is running, the processor communicates with the storage medium via the bus, and the processor executes the program instructions to implement the exposure control method of the lithography machine described in any of the above embodiments.
[0015] Fourthly, embodiments of this application provide a readable storage medium storing program instructions, which, when executed by a processor, implement the exposure control method of the lithography machine described in any of the above embodiments.
[0016] The beneficial effects of this application are: it provides an exposure control method for a lithography machine, comprising: before exposure begins, controlling a preheating device to heat the photomask of the lithography machine so that the photomask reaches its maximum deformation value after heating; transferring the heated photomask into the lithography machine, and exposing a test wafer using the heated photomask according to the preset exposure parameters of the lithography machine; obtaining the pattern size deviation between the exposure pattern on the test wafer and the preset pattern of the photomask; adjusting the preset exposure parameters of the lithography machine according to the pattern size deviation; and during the exposure process, exposing the wafer to be processed using the heated photomask according to the adjusted exposure parameters.
[0017] By preheating the photomask before exposure begins to allow it to reach its maximum deformation value in advance, continuous deformation of the photomask during exposure is avoided. The preset exposure parameters are adjusted to ensure that the dimensional deviation between the exposed pattern and the preset pattern on the photomask is stable and controllable, thus improving process stability. Furthermore, there is no need to pause during continuous exposure to wait for the photomask to cool down, which shortens the exposure time per wafer and increases the production capacity of the lithography machine. Attached Figure Description
[0018] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.
[0019] Figure 1 A schematic diagram of the preheating device provided in this application; Figure 2 This is one of the flowcharts illustrating the exposure control method for a lithography machine provided in an embodiment of this application; Figure 3 A second schematic flowchart of the exposure control method for a lithography machine provided in an embodiment of this application; Figure 4 The third schematic flowchart of the exposure control method for a lithography machine provided in the embodiments of this application; Figure 5 Fourth schematic flowchart of the exposure control method for a lithography machine provided in the embodiments of this application; Figure 6 Fifth schematic flowchart of the exposure control method for a lithography machine provided in the embodiments of this application; Figure 7 A schematic diagram of the exposure control device for a lithography machine provided in an embodiment of this application; Figure 8 A schematic diagram of the structure of the control device provided in the embodiment of this application.
[0020] Explanation of reference numerals in the attached diagram: 1. Sealed cavity; 2. Base; 3. Support frame; 4. Light source. Detailed Implementation
[0021] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are some embodiments of this application, but not all embodiments.
[0022] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.
[0023] Furthermore, the terms "first," "second," etc., used in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein. Additionally, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.
[0024] It should be noted that, where there is no conflict, the features in the embodiments of this application can be combined with each other.
[0025] Figure 1 A schematic diagram of the preheating device provided in this application is shown below. Figure 1As shown, this application provides a preheating device, which may include a sealed cavity 1 (the seal can prevent contamination by tiny particles), a base 2 located in the sealed cavity and fixedly connected to the bottom of the sealed cavity, a support frame 3 located on the base and used to support the photomask, and a light source 4 located in the sealed cavity and above the support frame. The light source is fixed to the top surface of the sealed cavity, and the exposure intensity of the light source is the same as the exposure intensity of the light source of the lithography machine.
[0026] The lamps can use UV light sources, such as those from Panasonic, USHIO, and Hamamatsu. The light source in the lamps uses mercury-xenon lamps or ultra-high pressure mercury lamps with a rated power of 200W and an ultraviolet intensity of 5000mW / cm2.
[0027] Based on this, the embodiments of this application provide an exposure control method for a lithography machine. This method can be generated by any control device with computing and processing capabilities. The control device can be, for example, a computer device facing the terminal or a back-end server.
[0028] The following examples, in conjunction with the accompanying drawings, provide specific illustrations of the exposure control method for the lithography machine provided in this application.
[0029] Figure 2 This is one of the flowcharts illustrating the exposure control method for a lithography machine provided in the embodiments of this application, such as... Figure 2 As shown, the method may include: S101. Before exposure begins, control the preheating device to heat the photomask of the lithography machine so that the photomask reaches its maximum deformation value after heating.
[0030] Before officially starting mass exposure production on the wafers, the process was initiated. Figure 1 The preheating device shown uniformly heats the photomask to ensure that it reaches the maximum deformation value during the exposure process after heating.
[0031] S102. Transfer the heated photomask into the lithography machine, and expose the test wafer using the heated photomask according to the preset exposure parameters of the lithography machine.
[0032] Specifically, the heated photomask is placed into the lithography machine, and the test wafer is exposed according to preset exposure parameters (exposure intensity 5000mw / cm², basic exposure time for a single wafer 17 seconds). The test wafer is used for process verification or equipment calibration (e.g., photomask deformation adjustment in this embodiment).
[0033] S103. Obtain the pattern size deviation between the exposure pattern on the test wafer and the preset pattern of the photomask.
[0034] In this embodiment, after exposure is completed, the test wafer is scanned by an OVL measurement device (Overlay) to obtain the pattern size deviation between the actual exposure pattern on the test wafer and the preset pattern of the photomask.
[0035] S104. Adjust the preset exposure parameters of the lithography machine according to the pattern size deviation.
[0036] In this embodiment, based on the pattern size deviation obtained by the OVL measurement device, a correction parameter is set in the parameter configuration file of the lithography machine. The original preset exposure parameters of the lithography machine are adjusted in a targeted manner according to the correction parameter to eliminate the size deviation caused by the photomask deformation.
[0037] S105. During the exposure process, the heated photomask is used to expose the wafer to be processed according to the adjusted exposure parameters.
[0038] In the mass exposure production process, the lithography machine uses a photomask that has been preheated to its maximum deformation value to continuously expose the wafer to be processed according to the corrected exposure parameters, so as to obtain the wafer product.
[0039] In summary, this embodiment provides an exposure control method for a lithography machine. By preheating the photomask before exposure begins to allow it to reach its maximum deformation value in advance, continuous deformation of the photomask during exposure is avoided. The preset exposure parameters are adjusted to ensure that the dimensional deviation between the exposed pattern and the preset pattern on the photomask is stable and controllable, thus improving process stability. Furthermore, there is no need to pause during continuous exposure to wait for the photomask to cool down, which shortens the exposure time per wafer and increases the production capacity of the lithography machine.
[0040] Figure 3 This is a second schematic flowchart of the exposure control method for a lithography machine provided in an embodiment of this application, as shown below. Figure 3 As shown, the preheating control device described in S101 heats the photomask of the lithography machine, and may include: S201. Obtain data on the deformation process of the photomask during the production process.
[0041] In the actual production process of a lithography machine, the deformation process data of the photomask is continuously recorded by the machine's data acquisition system. This data can include the photomask deformation value for each wafer when multiple wafers are exposed consecutively, forming a complete deformation time series dataset.
[0042] S202. Based on the deformation process data, obtain the heating control parameters corresponding to the maximum deformation value.
[0043] Figure 4 This is the third flowchart illustrating the exposure control method for a lithography machine provided in this application embodiment, as shown below. Figure 4 As shown, S202 may specifically include: S301. Based on the deformation values of multiple wafers, determine the number of target wafers corresponding to the maximum deformation value of the photomask.
[0044] The deformation values of the collected multiple wafers were analyzed, and deformation trend curves were plotted. The curves show that when the 10th wafer was exposed, the deformation value of the photomask reached its peak and no longer changed significantly. Therefore, the target number of wafers corresponding to the photomask reaching its maximum deformation value was determined to be 10.
[0045] S302. Determine the heating control parameters based on the target number of wafers.
[0046] Figure 5 This is the fourth flowchart illustrating the exposure control method for a lithography machine provided in this application embodiment. Figure 5 As shown, S302 may specifically include: S401. Determine the heating duration based on the number of target wafers and the exposure time of a single wafer.
[0047] Specifically, given that the basic exposure time for a single wafer is 17s and the target number of wafers is 10, the heating time = exposure time for a single wafer × number of target wafers. The theoretical heating time is calculated to be 17 × 10 = 170s. Based on actual production calibration, the final heating time range is set to 170s~3min.
[0048] S402. Determine the heating control parameters based on the heating duration.
[0049] The heating control parameters may include heating time (170 seconds to 3 minutes) and the preset exposure intensity of the lithography machine (5000 mW / cm²). Together, they constitute the core control parameters of the preheating device, ensuring that the heating effect is consistent with the deformation process of the photomask during the actual exposure process.
[0050] S203. According to the heating control parameters, control the preheating device to heat the photomask.
[0051] In this embodiment, the photomask is placed on the support frame / base of the preheating device, the box is sealed, and the lamp is turned on. The photomask is continuously irradiated with a light intensity of 5000mW / cm² for 170 seconds to 3 minutes to complete the preheating of the photomask.
[0052] Because the preheating of the photomask uses heating control parameters that are completely consistent with the deformation of the photomask during the exposure process, that is, the light intensity, duration and other conditions of the preheating are kept consistent with the actual exposure conditions, this setting can ensure that the deformation process of the photomask in the preheating stage is completely matched with the deformation characteristics in the subsequent actual exposure, avoiding abnormal deformation of the photomask due to differences between the preheating conditions and the exposure conditions, or secondary deformation in the subsequent actual exposure stage.
[0053] With this setting, the photomask can reach its maximum deformation state during the preheating stage, and this maximum deformation state remains stable during the subsequent actual exposure process without generating additional deformation, thereby effectively ensuring the alignment accuracy and stability of the photolithography process.
[0054] Figure 6 This is the fifth flowchart illustrating the exposure control method for a lithography machine provided in the embodiments of this application. Figure 6 As shown, step S103, adjusting the preset exposure parameters of the lithography machine according to the pattern size deviation, may include: S501. Obtain the exposure parameter correction values for multiple exposure regions within a single wafer based on the pattern size deviation setting.
[0055] Specifically, based on the measurement results of the test wafer by the OVL measurement equipment, for multiple exposure areas (shots) on a single wafer, the corresponding offset parameter correction value (shift compensation value), magnification parameter correction value (mag compensation value), and rotation parameter correction value (rot compensation value) are calculated for each area to form a partitioned correction parameter table.
[0056] S502. Adjust the exposure parameters of the corresponding exposure area in the preset exposure parameters according to the exposure parameter correction values of multiple exposure areas.
[0057] In the parameter configuration file of the lithography machine, the partition correction parameter table is called, and the offset, magnification, and rotation correction values of each exposure area are entered into the corresponding parameter items. The original preset exposure parameters are precisely adjusted to ensure that the pattern size deviation of each exposure area is effectively offset.
[0058] The apparatus, equipment, and storage medium for implementing the exposure control method of the lithography machine provided in any of the above embodiments of this application will be explained below. The specific implementation process and the resulting technical effects are the same as those in the corresponding method embodiments. For the sake of brevity, the parts not mentioned in the following embodiments can be referred to the corresponding content in the method embodiments.
[0059] Figure 7 This is a schematic diagram of the exposure control device of the lithography machine provided in the embodiments of this application, as shown below. Figure 7 As shown, this application provides an exposure control device for a lithography machine, comprising: The heating module 10 is used to control the preheating device to heat the photomask of the lithography machine before exposure begins, so that the photomask reaches its maximum deformation value after heating. The preheating device includes a sealed cavity, a base located in the sealed cavity and fixedly connected to the bottom of the sealed cavity, a support frame located on the base and used to support the photomask, and a light source located in the sealed cavity and above the support frame. The light source is fixed to the top surface of the sealed cavity, and the exposure intensity of the light source is the same as the exposure intensity of the light source of the lithography machine.
[0060] The first exposure module 20 is used to transfer the heated photomask into the lithography machine and expose the test wafer using the heated photomask according to the preset exposure parameters of the lithography machine.
[0061] The acquisition module 30 is used to acquire the pattern size deviation between the exposure pattern on the test wafer and the preset pattern of the photomask.
[0062] The adjustment module 40 is used to adjust the preset exposure parameters of the lithography machine according to the pattern size deviation.
[0063] The second exposure module 50 is used to expose the wafer to be processed using the heated photomask according to the adjusted exposure parameters during the exposure process.
[0064] Optionally, the heating module 10 is further configured to acquire deformation process data of the photomask during the production process; acquire heating control parameters corresponding to the maximum deformation value based on the deformation process data; and control the preheating device to heat the photomask based on the heating control parameters.
[0065] Optionally, the deformation process data includes the deformation values of multiple wafers; the heating module 10 is further configured to determine the number of target wafers corresponding to the maximum deformation value of the photomask based on the deformation values of the multiple wafers; and to determine the heating control parameters based on the number of target wafers.
[0066] Optionally, the heating module 10 is further configured to determine the heating duration based on the number of target wafers and the exposure time of a single wafer; and to determine the heating control parameters based on the heating duration.
[0067] Optionally, the heating control parameters also include the preset exposure intensity of the lithography machine; the heating module 10 is further configured to control the light source in the preheating device to heat the photomask placed in the preheating device according to the preset exposure intensity and the heating duration.
[0068] Optionally, the adjustment module 40 is further configured to obtain exposure parameter correction values for multiple exposure regions within a single wafer based on the pattern size deviation; and adjust the exposure parameters of the corresponding exposure regions in the preset exposure parameters of the lithography machine according to the exposure parameter correction values of the multiple exposure regions.
[0069] Optionally, the exposure parameters may include offset parameters, magnification parameters, and rotation parameters; the acquisition module 30 is further configured to adjust the offset parameters, magnification parameters, and rotation parameters of the corresponding exposure areas in the preset exposure parameters of the lithography machine according to the offset parameter correction values, magnification parameter correction values, and rotation parameter correction values of the multiple exposure areas.
[0070] The above-described device is used to execute the method provided in the foregoing embodiments, and its implementation principle and technical effect are similar, so they will not be described again here.
[0071] These modules can be one or more integrated circuits configured to implement the above methods, such as one or more Application Specific Integrated Circuits (ASICs), one or more microprocessors, or one or more Field Programmable Gate Arrays (FPGAs). Alternatively, when a module is implemented using processing element scheduler code, the processing element can be a general-purpose processor, such as a Central Processing Unit (CPU) or other processor capable of calling program code. Furthermore, these modules can be integrated together as a system-on-a-chip (SOC).
[0072] Figure 8 This is a schematic diagram of the structure of the control device provided in the embodiments of this application, such as... Figure 8 As shown, this application also provides a control device, including: a processor, a storage medium and a bus, wherein the storage medium stores program instructions executable by the processor. When the control device is running, the processor communicates with the storage medium via the bus, and the processor executes the program instructions to implement the exposure control method of the lithography machine described in any of the above embodiments.
[0073] This application also provides a readable storage medium storing program instructions, which, when executed by a processor, implement the exposure control method of the lithography machine described in any of the above embodiments.
[0074] In the several embodiments provided in this application, it should be understood that the disclosed apparatus and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between apparatuses or units may be electrical, mechanical, or other forms.
[0075] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.
[0076] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or in a combination of hardware and software functional units.
[0077] The integrated units implemented as software functional units described above can be stored in a computer-readable storage medium. These software functional units, stored in a storage medium, include several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) or processor to execute some steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.
[0078] The above are merely specific embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.
Claims
1. An exposure control method for a photolithography machine, characterized in that, include: Before exposure begins, the preheating device is controlled to heat the photomask of the lithography machine so that the photomask reaches its maximum deformation value after heating; The preheating device includes a sealed cavity, a base located inside the sealed cavity and fixedly connected to the bottom of the sealed cavity, a support frame located on the base and used to support the photomask, and a light source located inside the sealed cavity and above the support frame. The light source is fixed to the top surface of the sealed cavity, and the exposure intensity of the light source is the same as the exposure intensity of the light source of the lithography machine. The heated photomask is transferred into the lithography machine, and the test wafer is exposed using the heated photomask according to the preset exposure parameters of the lithography machine. Obtain the pattern size deviation between the exposure pattern on the test wafer and the preset pattern of the photomask; The preset exposure parameters of the lithography machine are adjusted according to the pattern size deviation. During the exposure process, the heated photomask is used to expose the wafer to be processed according to the adjusted exposure parameters.
2. The method according to claim 1, characterized in that, The preheating control device heats the photomask of the lithography machine, including: Acquire data on the deformation process of the photomask during the production process; Based on the deformation process data, obtain the heating control parameters corresponding to the maximum deformation value; The preheating device is controlled to heat the photomask according to the heating control parameters.
3. The method according to claim 2, characterized in that, The deformation process data includes: deformation values of multiple wafers; The step of obtaining the heating control parameters corresponding to the maximum deformation value based on the deformation process data includes: Based on the deformation values of the plurality of wafers, determine the number of target wafers corresponding to the maximum deformation value of the photomask; The heating control parameters are determined based on the number of target wafers.
4. The method according to claim 3, characterized in that, Determining the heating control parameters based on the target number of wafers includes: The heating duration is determined based on the number of target wafers and the exposure time of a single wafer; The heating control parameters are determined based on the heating duration.
5. The method according to claim 4, characterized in that, The heating control parameters also include: the preset exposure intensity of the lithography machine; The step of controlling the preheating device to heat the photomask according to the heating control parameters includes: Based on the preset exposure intensity and the heating time, the light source in the preheating device is controlled to heat the photomask placed in the preheating device.
6. The method according to claim 1, characterized in that, The step of adjusting the preset exposure parameters of the lithography machine according to the pattern size deviation includes: Obtain exposure parameter correction values for multiple exposure regions within a single wafer based on the pattern size deviation setting; Based on the exposure parameter correction values of the multiple exposure areas, the exposure parameters of the corresponding exposure areas in the preset exposure parameters of the lithography machine are adjusted.
7. The method according to claim 6, characterized in that, The exposure parameters include: offset parameters, magnification parameters, and rotation parameters; The step of adjusting the exposure parameters of the corresponding exposure regions in the preset exposure parameters of the lithography machine according to the exposure parameter correction values of the multiple exposure regions includes: Based on the offset parameter correction values, magnification parameter correction values, and rotation parameter correction values of the multiple exposure areas, the offset parameter, magnification parameter, and rotation parameter of the corresponding exposure area in the preset exposure parameters of the lithography machine are adjusted.
8. An exposure control device for a lithography machine, characterized in that, include: The heating module is used to control the preheating device to heat the photomask of the lithography machine before the exposure begins, so that the photomask reaches its maximum deformation value after heating; The preheating device includes a sealed cavity, a base located inside the sealed cavity and fixedly connected to the bottom of the sealed cavity, a support frame located on the base and used to support the photomask, and a light source located inside the sealed cavity and above the support frame. The light source is fixed to the top surface of the sealed cavity, and the exposure intensity of the light source is the same as the exposure intensity of the light source of the lithography machine. The first exposure module is used to transfer the heated photomask into the lithography machine and expose the test wafer using the heated photomask according to the preset exposure parameters of the lithography machine. The acquisition module is used to acquire the pattern size deviation between the exposure pattern on the test wafer and the preset pattern of the photomask; An adjustment module is used to adjust the preset exposure parameters of the lithography machine according to the pattern size deviation; The second exposure module is used to expose the wafer to be processed using the heated photomask according to the adjusted exposure parameters during the exposure process.
9. A control device, characterized in that, include: The device includes a processor, a storage medium, and a bus. The storage medium stores program instructions executable by the processor. When the control device is running, the processor communicates with the storage medium via the bus, and the processor executes the program instructions to implement the exposure control method of the lithography machine according to any one of claims 1 to 7.
10. A readable storage medium, characterized in that, The readable storage medium stores program instructions, which, when executed by a processor, implement the exposure control method of the lithography machine according to any one of claims 1 to 7.