Wide-temperature-range low-TCR metal film resistor self-adaptive magnetron sputtering preparation method and metal film resistor

Abstract

The invention relates to the technical field of thin film resistors, in particular to a self-adaptive magnetron sputtering preparation method of a wide-temperature-range low-TCR metal film resistor and the metal film resistor. The invention relates to a self-adaptive magnetron sputtering preparation method of a wide-temperature-range low-TCR metal film resistor, which comprises the following steps: carrying out magnetron sputtering treatment on the surface of a base material by using a target material and adopting a magnetron sputtering method; the magnetron sputtering treatment comprises the following reaction steps: performing magnetron sputtering treatment on the surface of the base material by taking argon as sputtering gas and taking nitrogen or oxygen as reaction gas, and forming a first metal resistive film on the surface of the base material; performing magnetron sputtering treatment on the surface of the base material by taking argon as sputtering gas and taking nitrogen and / or oxygen as reaction gas, and forming a second metal resistive film above the first metal resistive film; according to the metal film resistor prepared from the treated base material, the temperature coefficient TCR of the metal film resistor in a wide temperature range from-55 DEG C to 125 DEG C meets the following conditions: the TCR difference value in a positive temperature range is 0-5 ppm / DEG C; and the absolute value of the TCR difference value of the positive and negative temperature zones is less than or equal to 5ppm / DEG C.

Description

Technical Field

[0001] This application relates to the field of thin film resistor technology, and in particular to an adaptive magnetron sputtering method for fabricating a wide-temperature-range low-TCR metal film resistor, and the metal film resistor itself. Background Technology

[0002] In the field of electronic components, thin-film resistors are widely used due to their high precision, high stability, and miniaturization advantages. Sputtering is currently one of the mainstream processes for preparing high-performance thin-film resistors. The core of this process lies in the interaction between the sputtering target and the reactive gas to deposit a thin film with specific resistive properties on a substrate. The temperature coefficient of resistance (TCR) of the thin film is a key indicator for evaluating its performance, especially in wide temperature range applications (-55℃ to 125℃), where the absolute value of the TCR difference between the positive and negative temperature ranges must be ≤5ppm / ℃.

[0003] Currently, the industry generally uses fixed-formula sputtering targets combined with traditional sputtering processes to prepare thin-film resistors, but it still faces the following technical bottlenecks: Firstly, the compositional stability of fixed-formulation sputtering targets is insufficient. Due to element loss during melting and casting, the volatilization rate of volatile elements such as Al, Mn, and Si can reach 5-8%, leading to significant deviations between the actual composition and design values ​​of different batches of targets. Traditional processes lack the ability to dynamically control fluctuations in target composition, making the compositional differences between batches of targets directly affect the consistency of film composition, thereby exacerbating TCR fluctuations and making them highly dependent on target composition control.

[0004] Secondly, the temperature characteristics of single-component thin films are difficult to meet the requirements of a wide temperature range. Existing processes mostly use single nitride or oxide thin films, which have inherent defects in their TCR temperature characteristics: nitride films have a large positive drift range in the high-temperature range, but the TCR difference between low-temperature conditions and positive-temperature conditions is consistent; oxide films have a small TCR range under positive-temperature conditions, but the TCR difference between low-temperature conditions and positive-temperature conditions is large and unpredictable. Therefore, neither can achieve stable TCR control within a wide temperature range of -55℃ to 125℃.

[0005] Third, there is insufficient synergistic optimization between the reactant gas system and the target material composition. Traditional processes typically use pure oxygen or pure nitrogen as the reactant gas in a fixed proportion, resulting in a single thin film composition. Although existing technologies attempt to add temperature-sensitive materials to the target material to compensate for TCR, the compensation effect is limited and relies on strict control of the target material composition. This means that products in the medium-to-high resistivity range can only adapt to a narrow temperature range of 20℃ to 85℃, and cannot meet the requirement that the absolute value of the TCR difference between the positive and negative temperature ranges be ≤5ppm / ℃ within the wide temperature range of -55℃ to 125℃.

[0006] Fourth, traditional processes have difficulty overcoming the selective sputtering problem in the sputtering process, resulting in significant differences in heat treatment temperature and temperature sensitivity between furnace cycles.

[0007] Therefore, how to adjust the sputtering process to effectively avoid the temperature coefficient (TCR) of the prepared metal film resistor failing to meet the requirement that the absolute value of the TCR difference between the positive and negative temperature zones be ≤5ppm / ℃ in a wide temperature range of -55℃ to 125℃ due to deviations in the element content of the target material has become an urgent problem to be solved. Summary of the Invention

[0008] To address the shortcomings of existing technologies, this application provides an adaptive magnetron sputtering method for fabricating wide-temperature-range low-TCR metal film resistors, as well as the metal film resistor itself. This effectively solves the problems of uncontrolled TCR over a wide temperature range caused by variations in target element content, and the limited TCR characteristics of single thin films (nitrides or oxides) prepared using existing technologies. It effectively solves the product problems of medium-to-high resistance thin film resistors, reduces dependence on the consistency of target composition, and enables the fabricated metal film resistor to achieve a positive temperature range TCR difference of 0~5ppm / ℃ within a wide temperature range of -55℃ to 125℃; the absolute value of the positive and negative temperature range TCR difference is ≤5ppm / ℃.

[0009] This application presents a method for fabricating metal film resistors that is compatible with the fluctuations in target material through dynamic process control (i.e., a multi-stage sputtering control system for multi-channel reactive gases). It is particularly suitable for medium and high resistance applications in a wide temperature range of -55℃ to 125℃, where the temperature coefficient (TCR) difference in the positive temperature range is 0~5ppm / ℃ and the absolute value of the TCR difference in the positive and negative temperature ranges is ≤5ppm / ℃.

[0010] This application employs a dual-path reactive gas approach during monopolar pulse (MSP) magnetron sputtering, introducing one or two reactive gases. The reactive gases can be alternated during the sputtering process as needed, thereby forming a multilayer film structure with different components coexisting and alternating. Simultaneously, by utilizing the pinning and interface effects of rare earth elements in the target material, a gradient oxide layer is formed between the metal layers instead of an abrupt interface, reducing fluctuations in light scattering and electron migration. This reduces the temperature sensitivity of the thin film's TCR while significantly improving the film's stability.

[0011] In a first aspect, this application provides an adaptive magnetron sputtering method for fabricating wide-temperature-range, low-TCR metal film resistors, employing the following technical solution: An adaptive magnetron sputtering method for fabricating wide-temperature-range low-TCR metal film resistors includes the following steps: Using a target material, the surface of the substrate is treated with magnetron sputtering. The magnetron sputtering process includes sequentially performing a first magnetron sputtering stage and a second magnetron sputtering stage. The reaction steps in the first magnetron sputtering stage are as follows: Argon is used as the sputtering gas and nitrogen or oxygen is used as the reaction gas to perform magnetron sputtering on the surface of the substrate and form a first metal resistive film on the surface of the substrate. After the first magnetron sputtering stage is completed, samples are taken and the temperature coefficient (TCR) range curve of the first metal resistive film is tested in a wide temperature range of -55℃ to 125℃. The wide temperature range is divided into a positive temperature range of 25℃ to 125℃ and a negative temperature range of -55℃ to 25℃. The absolute values ​​of the TCR difference in the positive temperature range, the TCR difference in the negative temperature range, and the TCR difference between the positive and negative temperature ranges are calculated. When the absolute value of the TCR difference between the positive and negative temperature zones is greater than 5, the second magnetron sputtering stage is performed. The reaction steps in the second magnetron sputtering stage are as follows: Argon is used as the sputtering gas and nitrogen and / or oxygen is used as the reaction gas to perform magnetron sputtering on the surface of the substrate and form a second metal resistive film on top of the first metal resistive film. After the second magnetron sputtering stage is completed, samples are taken, and the magnetron sputtered substrate is subjected to annealing, photolithography, and electrode fabrication to prepare a metal film resistor. The temperature coefficient (TCR) range curve of the metal film resistor is tested in a wide temperature range of -55℃ to 125℃. The TCR in the wide temperature range of -55℃ to 125℃ meets the following requirements: the TCR difference in the positive temperature range is 0~5ppm / ℃; the absolute value of the TCR difference between the positive and negative temperature ranges is ≤5ppm / ℃.

[0012] Preferably, the method for calculating the absolute values ​​of the TCR difference in the positive temperature zone, the TCR difference in the negative temperature zone, and the TCR difference between the positive and negative temperature zones includes the following steps: Calculate the difference between the absolute value of the temperature coefficient TCR at 125℃ and the temperature coefficient TCR at 25℃ in the positive temperature zone, and record it as the positive temperature zone TCR difference; Calculate the difference between the absolute value of the temperature coefficient TCR at -55℃ and the temperature coefficient TCR at 25℃ in the negative temperature zone, and record it as the negative temperature zone TCR difference. Calculate the absolute value of the difference between the TCR difference in the negative temperature zone and the TCR difference in the positive temperature zone, and record it as the absolute value of the TCR difference between the positive and negative temperature zones.

[0013] By adopting the above technical solution, since the TCR difference of the same batch of targets with the same formulation is the same in the positive temperature range, the TCR difference in the negative temperature range is basically constant, and the absolute values ​​of the TCR difference in the positive and negative temperature ranges are basically the same. However, for different batches of targets with the same formulation, there are content deviations between target elements, and the absolute values ​​of their TCR differences in the positive and negative temperature ranges are inconsistent. This application proposes a sputtering process using staged multi-path dynamic adjustment of reactive gases (multi-path support and flow and time control of magnetron sputtering machine) to form multilayer composite metal resistive films without changing the target material. By optimizing the oxynitride gradient, the influence of the single nitride (or oxide) film's single TCR characteristics and the fluctuation of target material composition is compensated, thus achieving stable preparation of low TCR films over a wide temperature range.

[0014] In this application, argon is used as the sputtering gas, and nitrogen and / or oxygen are used as the reactant gas for magnetron sputtering. The purpose of filling the reactant gas is twofold: first, to adjust the film resistance; and second, to adjust the heat treatment temperature and temperature coefficient of the film. The introduced nitrogen gas helps to improve the hardness and impact resistance of the film, resulting in a hard film, while also improving the film's heat resistance and durability. The introduced oxygen gas can react with the components in the target material to generate its oxides, compensating for the film's temperature coefficient under high and low temperature conditions. This ensures that the prepared metal film resistor satisfies the following temperature coefficient (TCR) requirements within a wide temperature range of -55℃ to 125℃: the TCR difference in the positive temperature range is 0~5ppm / ℃; and the absolute value of the TCR difference between the positive and negative temperature ranges is ≤5ppm / ℃.

[0015] Preferably, in the first magnetron sputtering stage, the sputtering gas flow rate is 30~80 sccm and the sputtering gas introduction time is 5~20 min; the reaction gas flow rate is 1~10 sccm and the reaction gas introduction time is 5~20 min.

[0016] Preferably, in the second magnetron sputtering stage, the flow rate of the sputtering gas is 50-75 sccm, and the sputtering gas is introduced for the entire duration.

[0017] Preferably, when 5 < the absolute value of the TCR difference between the positive and negative temperature zones ≤ 10 during the first magnetron sputtering stage, the step of introducing the reactive gas in the second magnetron sputtering stage is as follows: First stage: Introduce nitrogen gas at a flow rate of 5-15 sccm for 40-60 min. Second stage: Introduce nitrogen and oxygen at a flow rate ratio of (10~15):1 for 10~20 minutes. Third stage: Introduce nitrogen gas at a flow rate of 5-15 sccm for 40-60 minutes. Fourth stage: Introduce nitrogen and oxygen at a flow rate ratio of (10~15):1 for 10~20 minutes. Fifth stage: Introduce nitrogen gas at a flow rate of 5-15 sccm for 40-60 min. Stage 6: Introduce nitrogen and oxygen at a flow rate ratio of (10~15):1 for 10~20 minutes.

[0018] Preferably, when 10 < the absolute value of the TCR difference between the positive and negative temperature zones ≤ 20 in the first magnetron sputtering stage, the step of introducing the reactive gas in the second magnetron sputtering stage is as follows: First stage: Introduce nitrogen gas at a flow rate of 5-15 sccm for 40-60 min. Second stage: Introduce nitrogen and oxygen at a flow rate ratio of (10~15):1 for 10~20 minutes. Third stage: Introduce nitrogen gas at a flow rate of 5-15 sccm for 40-60 minutes. Fourth stage: Introduce nitrogen and oxygen at a flow rate ratio of (10~15):1 for 10~20 minutes. Fifth stage: Introduce nitrogen gas at a flow rate of 5-15 sccm for 40-60 min. Stage 6: Introduce oxygen at a flow rate of 1-3 sccm for 10-20 minutes.

[0019] Preferably, when the absolute value of the TCR difference between the positive and negative temperature zones is >20 during the first magnetron sputtering stage, the step of introducing the reactive gas in the second magnetron sputtering stage is as follows: First stage: Introduce nitrogen gas at a flow rate of 5-15 sccm for 40-60 min. Second stage: Introduce nitrogen and oxygen at a flow rate ratio of (10~15):1 for 10~20 minutes. Third stage: Introduce nitrogen gas at a flow rate of 5-15 sccm for 40-60 minutes. Fourth stage: Introduce oxygen at a flow rate of 1-3 sccm for 10-20 minutes; Fifth stage: Introduce nitrogen gas at a flow rate of 5-15 sccm for 40-60 min. Stage 6: Introduce oxygen at a flow rate of 1-3 sccm for 10-20 minutes.

[0020] Preferably, the substrate includes at least one of ceramic substrate, silicon substrate, glass substrate and organic polymer substrate.

[0021] Preferably, the target material includes at least one of a metal target, an oxide target, a nitride target, and a metal silicide target.

[0022] Preferably, the metal target material includes at least one of Cr, Si, Al, Mn, Zr, Ti, Ta, W, Y, and alloys thereof.

[0023] Secondly, this application provides a metal film resistor, which adopts the following technical solution: A metal film resistor, the metal film resistor comprising: Substrate; A composite metal resistive film is formed on the surface of the substrate, wherein the composite metal resistive film is composed of a first metal resistive film and a second metal resistive film; both the first metal resistive film and the second metal resistive film are prepared by the above method; And electrodes formed on both sides of the composite metal resistive film.

[0024] Preferably, the composite metal resistive film is at least one of a nitrogen-rich layer, a nitrogen-oxygen layer, and an oxygen-rich layer.

[0025] In summary, this application includes at least one of the following beneficial technical effects: This application discloses an adaptive magnetron sputtering method for fabricating a wide-temperature-range low-TCR metal film resistor and the metal film resistor itself. By adjusting the reactant gas, the gas flow rate, and the flow time during the magnetron sputtering process, the metal film resistor ultimately fabricated satisfies the following TCR requirements within a wide temperature range of -55℃ to 125℃: the TCR difference in the positive temperature range is 0~5ppm / ℃; and the absolute value of the TCR difference between the positive and negative temperature ranges is ≤5ppm / ℃. Attached Figure Description

[0026] Figure 1This is a temperature coefficient (TCR) range curve of the first metal resistive film in Example 1 within a wide temperature range of -55℃ to 125℃; Figure 2 This is a temperature coefficient (TCR) range curve of the metal film resistor in Example 1 within a wide temperature range of -55℃ to 125℃. Detailed Implementation

[0027] The technical solutions of this application are further illustrated by specific embodiments below. These specific embodiments do not represent a limitation on the scope of protection of this application. Any non-essential modifications and adjustments made by others based on the concept of this application still fall within the scope of protection of this application.

[0028] All raw materials involved in this application are commercially available products. The following detailed description of this application is provided in conjunction with examples and comparative examples.

[0029] An adaptive magnetron sputtering method for fabricating wide-temperature-range low-TCR metal film resistors includes the following steps: Step 1: Selecting the substrate The substrate includes at least one of ceramic substrate, silicon substrate, glass substrate and organic polymer substrate.

[0030] In one specific implementation scheme, the substrate is a ceramic substrate, which can be selected from high-purity alumina ceramics, beryllium oxide ceramics, aluminum nitride ceramics, etc.

[0031] In this embodiment, a high-purity, high-alumina ceramic substrate is used as the substrate, typically in the form of a cylindrical white rod. Before feeding, the substrate undergoes a rigorous cleaning process to remove surface contaminants, grease, and dust. The cleaning steps typically include ultrasonic cleaning with organic solvents, rinsing with deionized water, and high-temperature drying to ensure the substrate surface achieves atomic-level cleanliness, laying the foundation for uniform film adhesion.

[0032] Step 2: Selecting the target material The target material includes at least one of metal targets, oxide targets, nitride targets, and metal silicide targets.

[0033] The metal target material includes at least one of Cr, Si, Al, Mn, Zr, Ti, Ta, W, Y, and alloys thereof.

[0034] Step 3: Vacuuming: The cleaned and dried substrates are loaded into the vacuum chamber drum of the magnetron sputtering equipment, ensuring that each substrate rotates uniformly with the drum during sputtering to obtain thin films with excellent thickness consistency. After closing and locking the sputtering chamber, the high vacuum system is activated for evacuation. This process consists of two steps: Low vacuum: A mechanical pump is used to evacuate the chamber from atmospheric pressure to a medium vacuum range, 10-1 Pa to 1Pa.

[0035] High vacuum: Switch to a high vacuum pump such as a molecular pump or cryogenic pump to evacuate the chamber to a base vacuum of 5.0 × 10⁻⁶. -3 Pa or higher. The purpose is to eliminate residual water vapor, oxygen and other impurities in the chamber to the greatest extent possible, so as to prevent them from adversely affecting the sputtering process and the purity of the film.

[0036] Step 4: Magnetron sputtering treatment; High-purity (99.999%) argon gas (Ar) is precisely introduced as a sputtering gas into the already high-vacuum chamber using a mass flow meter. The argon gas is ionized into Ar under the influence of an electric field. + Ions are used to bombard the target material, while a reaction gas is introduced to carry out the reaction.

[0037] A DC or radio frequency power supply is applied between the cathode (target) and the anode to cause argon gas to undergo glow discharge, forming plasma. + Ions are accelerated under the influence of an electric field and bombard the target surface with extremely high energy, causing the target atoms or molecules to be "sputtered". These sputtered target particles fly to the substrate surface in atomic or molecular form and react with the reactive gas on the substrate surface or in space, eventually depositing and condensing to form a dense and uniform metal resistive film.

[0038] The substrate surface is treated by magnetron sputtering, as detailed below: The magnetron sputtering process includes performing a first magnetron sputtering stage and a second magnetron sputtering stage sequentially. S1, The reaction steps in the first magnetron sputtering stage are as follows: Argon is used as the sputtering gas and nitrogen or oxygen is used as the reaction gas to perform magnetron sputtering on the surface of the substrate and form a first metal resistive film on the surface of the substrate. In the first magnetron sputtering stage, the sputtering gas flow rate is 30~80 sccm and the sputtering gas introduction time is 5~20 min; the reaction gas flow rate is 1~10 sccm and the reaction gas introduction time is 5~20 min.

[0039] S2. Sampling and testing: After the first magnetron sputtering stage is completed, a sample is taken, and a precision resistor is used to test the temperature coefficient (TCR) range curve of the first metal resistive film in a wide temperature range of -55℃ to 125℃. The wide temperature range is divided into a positive temperature range of 25℃ to 125℃ and a negative temperature range of -55℃ to 25℃. Calculate the difference between the absolute value of the temperature coefficient TCR at 125℃ and the absolute value of the temperature coefficient TCR at 25℃ in the positive temperature range, and denote it as the positive temperature range TCR difference (TCR).正温 ); The difference between the absolute value of the temperature coefficient TCR at -55℃ and the absolute value of the temperature coefficient TCR at 25℃ is calculated and denoted as the negative temperature zone TCR difference (TCR). 负温 ); Calculate the absolute value of the difference between the TCR difference in the negative temperature zone and the TCR difference in the positive temperature zone, and record it as the absolute value of the TCR difference between the positive and negative temperature zones (ΔTCR). The calculation formula is as follows: TCR difference in the positive temperature range (TCR) 正温 = |TCR value at 125℃| -25℃ TCR value; TCR difference in negative temperature range (TCR) 负温 = |TCR value at -55℃|TCR value at -25℃; The absolute value of the TCR difference between the positive and negative temperature zones (ΔTCR) = |TCR difference in the negative temperature zone - TCR difference in the positive temperature zone|; When the absolute value of the TCR difference between the positive and negative temperature zones is greater than 5, the second magnetron sputtering stage is performed. S3, Second Magnetron Sputtering Stage The reaction steps in the second magnetron sputtering stage are as follows: Argon is used as the sputtering gas and nitrogen and / or oxygen is used as the reaction gas to perform magnetron sputtering on the surface of the substrate and form a second metal resistive film on top of the first metal resistive film. In the second magnetron sputtering stage, the sputtering gas flow rate is 50-75 sccm, and the sputtering gas is introduced for the entire duration.

[0040] Specifically, the amount of reactant gas, the flow rate, and the inlet time are adjusted according to the absolute value of the TCR difference between the positive and negative temperature zones.

[0041] (1) When 5 < absolute value of TCR difference between positive and negative temperature zones ≤ 10 during the first magnetron sputtering stage, the steps for introducing the reaction gas in the second magnetron sputtering stage are as follows: First stage: Introduce nitrogen gas at a flow rate of 5-15 sccm for 40-60 min. Second stage: Introduce nitrogen and oxygen at a flow rate ratio of (10~15):1 for 10~20 minutes. Third stage: Introduce nitrogen gas at a flow rate of 5-15 sccm for 40-60 minutes. Fourth stage: Introduce nitrogen and oxygen at a flow rate ratio of (10~15):1 for 10~20 minutes. Fifth stage: Introduce nitrogen gas at a flow rate of 5-15 sccm for 40-60 min. Stage 6: Introduce nitrogen and oxygen at a flow rate ratio of (10~15):1 for 10~20 minutes.

[0042] (2) When 10 < absolute value of the TCR difference between the positive and negative temperature zones ≤ 20 during the first magnetron sputtering stage, the steps for introducing the reaction gas in the second magnetron sputtering stage are as follows: First stage: Introduce nitrogen gas at a flow rate of 5-15 sccm for 40-60 min. Second stage: Introduce nitrogen and oxygen at a flow rate ratio of (10~15):1 for 10~20 minutes. Third stage: Introduce nitrogen gas at a flow rate of 5-15 sccm for 40-60 minutes. Fourth stage: Introduce nitrogen and oxygen at a flow rate ratio of (10~15):1 for 10~20 minutes. Fifth stage: Introduce nitrogen gas at a flow rate of 5-15 sccm for 40-60 min. Stage 6: Introduce oxygen at a flow rate of 1-3 sccm for 10-20 minutes.

[0043] (3) When the absolute value of the TCR difference between the positive and negative temperature zones is >20 during the first magnetron sputtering stage, the steps for introducing the reaction gas during the second magnetron sputtering stage are as follows: First stage: Introduce nitrogen gas at a flow rate of 5-15 sccm for 40-60 min. Second stage: Introduce nitrogen and oxygen at a flow rate ratio of (10~15):1 for 10~20 minutes. Third stage: Introduce nitrogen gas at a flow rate of 5-15 sccm for 40-60 minutes. Fourth stage: Introduce oxygen at a flow rate of 1-3 sccm for 10-20 minutes; Fifth stage: Introduce nitrogen gas at a flow rate of 5-15 sccm for 40-60 min. Stage 6: Introduce oxygen at a flow rate of 1-3 sccm for 10-20 minutes.

[0044] Step 5: Sampling After the second magnetron sputtering stage is completed, samples are taken, and the magnetron sputtered substrate is annealed, photolithographically processed, electrode prepared, and coated with a protective film to prepare a metal film resistor. The temperature coefficient (TCR) range curve of the metal film resistor in a wide temperature range of -55℃ to 125℃ is tested using a precision resistor. The TCR difference in the positive temperature range, the TCR difference in the negative temperature range, and the absolute value of the TCR difference between the positive and negative temperature ranges are calculated. The temperature coefficient (TCR) in the wide temperature range of -55℃ to 125℃ satisfies the following: the TCR difference in the positive temperature range is 0~5ppm / ℃; the absolute value of the TCR difference between the positive and negative temperature ranges is ≤5ppm / ℃.

[0045] Step 6: Post-sputtering treatment After the substrate deposition is completed, turn off the power and gas supply, continue to evacuate for 10 minutes, and then slowly introduce nitrogen gas to normal pressure to avoid damage to the film layer due to sudden pressure changes. Then take out the substrate with film.

[0046] The substrate is placed in an annealing furnace, protected with nitrogen, and held at 300°C for 60 minutes, then cooled in the furnace.

[0047] Step 7: Subsequent Shaping After annealing, the substrate is coated with photoresist and then pre-baked, exposed, and developed. Spiral grooves are then created using ion etching. The resistance value accuracy is adjusted to ±0.1% by adjusting the groove parameters, and then the photoresist is removed.

[0048] Ag or Ni electrodes, 1-5 μm thick, are sputtered at both ends of the resistive film to ensure ohmic contact. Finally, the film is coated with epoxy resin or encapsulated in ceramic. Resistance, insulation, temperature resistance, and other indicators are then tested to select qualified products.

[0049] The final metal film resistor has the following temperature coefficient (TCR) in a wide temperature range of -55℃ to 125℃: the TCR difference in the positive temperature range is 0~5ppm / ℃; and the absolute value of the TCR difference in the positive and negative temperature ranges is ≤5ppm / ℃.

[0050] Example 1: The fabrication method of metal film resistors includes the following steps: Step 1: Selecting the substrate The substrate is a high-purity ceramic substrate with a high aluminum content, with a purity > 95% and an alumina content > 95%.

[0051] The substrate was immersed in an 8% alkaline mixed cleaning solution (a mixture of NaOH and Na2CO3 in a mass ratio of 2:1) at 55°C and ultrasonically cleaned for 18 minutes to remove surface oil and organic contaminants. It was then ultrasonically rinsed three times with deionized water to remove residual alkali. Next, it was ultrasonically cleaned with anhydrous ethanol for 10 minutes to further remove moisture and trace organic matter. Finally, the substrate was dried in a 120°C oven for 30 minutes to ensure that the surface water content of the substrate was ≤0.1% for later use.

[0052] Step 2: Selecting the target material The target material is a Cr-Si alloy, with a chromium content of 70 wt%, a silicon content of 25 wt%, and a yttrium content of 5 wt%.

[0053] The target material in this embodiment is the same model as the target material in other embodiments, but from a different batch.

[0054] Step 3: Vacuuming The cleaned and dried substrates are loaded into the vacuum chamber drum of the magnetron sputtering equipment, ensuring that each substrate rotates uniformly with the drum during sputtering to obtain thin films with excellent thickness consistency. After closing and locking the sputtering chamber, the high vacuum system is activated for evacuation. This process consists of two steps: Low vacuum: A mechanical pump is used to evacuate the chamber from atmospheric pressure to 10. -1 Pa.

[0055] High vacuum: Switch to a high vacuum pump such as a molecular pump or cryogenic pump to evacuate the chamber to a base vacuum of 5.0 × 10⁻⁶. -3 Pa.

[0056] Step 4: Magnetron sputtering treatment The substrate surface is treated by magnetron sputtering. S1, First Magnetron Sputtering Stage Argon (99.999% purity) was used as the sputtering gas and nitrogen was used as the reaction gas to perform magnetron sputtering on the substrate surface and form a first metal resistive film on the substrate surface. The argon gas flow rate was controlled at 80 sccm and the inlet time was 13 min; the nitrogen gas flow rate was controlled at 10 sccm and the inlet time was 13 min; the sputtering power was 300 W; and the deposition rate was controlled at 100 nm / h.

[0057] S2. Sampling and testing: After the first magnetron sputtering stage is completed, a sample is taken, and a precision resistor is used to test the temperature coefficient (TCR) range curve of the first metal resistive film in a wide temperature range of -55℃ to 125℃. The wide temperature range is divided into a positive temperature range of 25℃ to 125℃ and a negative temperature range of -55℃ to 25℃. Calculate the difference between the absolute value of the temperature coefficient TCR at 125℃ and the absolute value of the temperature coefficient TCR at 25℃ in the positive temperature range, and denote it as the positive temperature range TCR difference (TCR). 正温 ); TCR difference in the positive temperature range (TCR) 正温 = |TCR value at 125℃| -25℃ TCR value; The difference between the absolute value of the temperature coefficient TCR at -55℃ and the absolute value of the temperature coefficient TCR at 25℃ is calculated and denoted as the negative temperature zone TCR difference (TCR). 负温 ); TCR difference in negative temperature range (TCR) 负温 = |TCR value at -55℃|TCR value at -25℃; Calculate the absolute value of the difference between the TCR difference in the negative temperature zone and the TCR difference in the positive temperature zone, and record it as the absolute value of the TCR difference between the positive and negative temperature zones (ΔTCR). The absolute value of the TCR difference between the positive and negative temperature zones (ΔTCR) = |TCR difference in the negative temperature zone - TCR difference in the positive temperature zone|; The calculation results are shown in Table 1. The temperature coefficient (TCR) range curve of the first metal resistive film in the wide temperature range of -55℃ to 125℃ is shown in Table 1. Figure 1 As shown: Table 1. ΔTCR of the first batch of targets in Example 1

[0058] According to Table 1, if the absolute value of the TCR difference between the positive and negative temperature zones (ΔTCR) is greater than 5, the second magnetron sputtering stage will be performed. S3, Second Magnetron Sputtering Stage Argon is used as the sputtering gas and nitrogen and / or oxygen is used as the reaction gas to perform magnetron sputtering on the surface of the substrate and form a second metal resistive film on top of the first metal resistive film. The argon gas flow rate was controlled at 65 sccm; the sputtering power was 300 W; the deposition rate was controlled at 100 nm / h; and the sputtering gas was introduced for the entire duration.

[0059] Following the procedure of reacting gas with a temperature range of 10 < absolute value of TCR difference between positive and negative temperature zones ≤ 20, the reacting gas, flow rate, and inlet time are adjusted.

[0060] Table 2. Conditions for introducing the reaction gas in Example 1

[0061] Step 5: Sampling After the second magnetron sputtering stage is completed, samples are taken. The magnetron sputtered substrate is then annealed, photolithographically processed, electrode fabricated, and coated with a protective film to prepare a metal film resistor. The temperature coefficient (TCR) curve of the metal film resistor is measured using a precision resistor within a wide temperature range of -55℃ to 125℃. Figure 2 As shown, calculate the absolute values ​​of the TCR difference in the positive temperature zone, the TCR difference in the negative temperature zone, and the TCR difference between the positive and negative temperature zones.

[0062] Calculations show that the TCR difference in the positive temperature range is 1, and the absolute value of the TCR difference in the positive and negative temperature ranges is 1.5. This indicates that after processing using the method of this application, the temperature coefficient TCR in the wide temperature range of -55℃ to 125℃ satisfies the following: the TCR difference in the positive temperature range is 0~5ppm / ℃; and the absolute value of the TCR difference in the positive and negative temperature ranges is ≤5ppm / ℃.

[0063] After the sputtering process in this step, a nitrogen-rich layer, a nitrogen-oxygen layer, a nitrogen-rich layer, a nitrogen-oxygen layer, a nitrogen-rich layer, and an oxygen-rich layer are formed sequentially from the inside to the outside on the surface of the substrate.

[0064] Step 6: Post-sputtering treatment After the substrate deposition is completed, turn off the power and gas supply, continue to evacuate for 10 minutes, and then slowly introduce nitrogen gas to normal pressure to avoid damage to the film layer due to sudden pressure changes. Then take out the substrate with film.

[0065] The substrate is placed in an annealing furnace, protected with nitrogen, and held at 300°C for 60 minutes, then cooled in the furnace.

[0066] Step 7: Subsequent Shaping After annealing, the substrate is coated with photoresist and then pre-baked, exposed, and developed. Spiral grooves are then created using ion etching. The resistance value accuracy is adjusted to ±0.1% by adjusting the groove parameters, and then the photoresist is removed.

[0067] Ag or Ni electrodes, 1-5 μm thick, are sputtered at both ends of the resistive film to ensure ohmic contact. Finally, the film is coated with epoxy resin or encapsulated in ceramic. Resistance, insulation, temperature resistance, and other indicators are then tested to select qualified products.

[0068] The final metal film resistor has the following temperature coefficient (TCR) in a wide temperature range of -55℃ to 125℃: the TCR difference in the positive temperature range is 0~5ppm / ℃; and the absolute value of the TCR difference in the positive and negative temperature ranges is ≤5ppm / ℃.

[0069] Example 2:

[0070] The fabrication method of metal film resistors includes the following steps: Step 1: Select the substrate; The substrate is a high-purity ceramic substrate with a high aluminum content, with a purity > 95% and an alumina content > 95%.

[0071] The substrate was immersed in an 8% alkaline mixed cleaning solution (a mixture of NaOH and Na2CO3 in a mass ratio of 2:1) at 55°C and ultrasonically cleaned for 18 minutes to remove surface oil and organic contaminants. It was then ultrasonically rinsed three times with deionized water to remove residual alkali. Next, it was ultrasonically cleaned with anhydrous ethanol for 10 minutes to further remove moisture and trace organic matter. Finally, the substrate was dried in a 120°C oven for 30 minutes to ensure that the surface water content of the substrate was ≤0.1% for later use. Step 2: Selecting the target material The target material is a Cr-Si alloy, with a chromium content of 65 wt%, a silicon content of 30 wt%, and a yttrium content of 5 wt%.

[0072] The target material in this embodiment is the same model as the target material in other embodiments, but from a different batch.

[0073] Step 3: Vacuuming: The cleaned and dried substrates are loaded into the vacuum chamber drum of the magnetron sputtering equipment, ensuring that each substrate rotates uniformly with the drum during sputtering to obtain thin films with excellent thickness consistency. After closing and locking the sputtering chamber, the high vacuum system is activated for evacuation. This process consists of two steps: Low vacuum: A mechanical pump is used to evacuate the chamber from atmospheric pressure to 10. -1 Pa.

[0074] High vacuum: Switch to a high vacuum pump such as a molecular pump or cryogenic pump to evacuate the chamber to a base vacuum of 5.0 × 10⁻⁶. -3 Pa.

[0075] Step 4: Magnetron sputtering treatment The substrate surface is treated by magnetron sputtering. S1, First magnetron sputtering stage: Argon (99.999% purity) was used as the sputtering gas and nitrogen was used as the reaction gas to perform magnetron sputtering on the substrate surface and form a first metal resistive film on the substrate surface. The argon gas flow rate was controlled at 80 sccm and the inlet time was 13 min; the nitrogen gas flow rate was controlled at 10 sccm and the inlet time was 13 min; the sputtering power was 300 W; and the deposition rate was controlled at 100 nm / h.

[0076] S2. Sampling and testing: After the first magnetron sputtering stage is completed, a sample is taken, and a precision resistor is used to test the temperature coefficient (TCR) range curve of the first metal resistive film in a wide temperature range of -55℃ to 125℃. The wide temperature range is divided into a positive temperature range of 25℃ to 125℃ and a negative temperature range of -55℃ to 25℃. Calculate the difference between the absolute value of the temperature coefficient TCR at 125℃ and the absolute value of the temperature coefficient TCR at 25℃ in the positive temperature range, and denote it as the positive temperature range TCR difference (TCR). 正温 ); TCR difference in the positive temperature range (TCR) 正温 = |TCR value at 125℃| -25℃ TCR value; The difference between the absolute value of the temperature coefficient TCR at -55℃ and the absolute value of the temperature coefficient TCR at 25℃ is calculated and denoted as the negative temperature zone TCR difference (TCR). 负温 ); TCR difference in negative temperature range (TCR) 负温 = |TCR value at -55℃|TCR value at -25℃; Calculate the absolute value of the difference between the TCR difference in the negative temperature zone and the TCR difference in the positive temperature zone, and record it as the absolute value of the TCR difference between the positive and negative temperature zones (ΔTCR). The absolute value of the TCR difference between the positive and negative temperature zones (ΔTCR) = |TCR difference in the negative temperature zone - TCR difference in the positive temperature zone|; The calculation results are shown in Table 1: Table 3. ΔTCR of the second batch of targets in Example 2

[0077] According to Table 3, if the absolute value of the TCR difference between the positive and negative temperature zones (ΔTCR) is greater than 5, the second magnetron sputtering stage will be performed. S3, Second Magnetron Sputtering Stage Argon is used as the sputtering gas and nitrogen and / or oxygen is used as the reaction gas to perform magnetron sputtering on the surface of the substrate and form a second metal resistive film on top of the first metal resistive film. The argon gas flow rate was controlled at 65 sccm; the sputtering power was 300 W; the deposition rate was controlled at 100 nm / h; and the sputtering gas was introduced for the entire duration.

[0078] Following the procedure of reacting gas with a temperature range of 5 < absolute value of TCR difference between positive and negative temperature zones ≤ 10, the reacting gas, flow rate, and inlet time are adjusted.

[0079] Table 4. Conditions for introducing the reaction gas in Example 2

[0080] Step 5: Sampling After the second magnetron sputtering stage is completed, samples are taken, and the magnetron sputtered substrate is annealed, photolithographically processed, electrode prepared, and coated with a protective film to prepare a metal film resistor. The temperature coefficient (TCR) range curve of the metal film resistor in a wide temperature range of -55℃ to 125℃ is tested using a precision resistor, and the absolute values ​​of the TCR difference in the positive temperature range, the TCR difference in the negative temperature range, and the TCR difference between the positive and negative temperature ranges are calculated.

[0081] Calculations show that the TCR difference in the positive temperature range is 1, and the absolute value of the TCR difference in the positive and negative temperature ranges is 1. This indicates that after using the method of this application, the temperature coefficient TCR in the wide temperature range of -55℃ to 125℃ satisfies the following: the TCR difference in the positive temperature range is 0~5ppm / ℃; and the absolute value of the TCR difference in the positive and negative temperature ranges is ≤5ppm / ℃.

[0082] After the sputtering process in this step, a nitrogen-rich layer, a nitrogen-oxygen layer, a nitrogen-rich layer, a nitrogen-oxygen layer, a nitrogen-rich layer, and a nitrogen-oxygen layer are formed sequentially from the inside to the outside on the surface of the substrate.

[0083] Step 6: Post-sputtering treatment After the substrate deposition is completed, turn off the power and gas supply, continue to evacuate for 10 minutes, and then slowly introduce nitrogen gas to normal pressure to avoid damage to the film layer due to sudden pressure changes. Then take out the substrate with film.

[0084] The substrate is placed in an annealing furnace, protected with nitrogen, and held at 300°C for 60 minutes, then cooled in the furnace.

[0085] Step 7: Subsequent Shaping After annealing, the substrate is coated with photoresist and then pre-baked, exposed, and developed. Spiral grooves are then created using ion etching. The resistance value accuracy is adjusted to ±0.1% by adjusting the groove parameters, and then the photoresist is removed.

[0086] Ag or Ni electrodes, 1-5 μm thick, are sputtered at both ends of the resistive film to ensure ohmic contact. Finally, the film is coated with epoxy resin or encapsulated in ceramic. Resistance, insulation, temperature resistance, and other indicators are then tested to select qualified products.

[0087] The final metal film resistor has the following temperature coefficient (TCR) in a wide temperature range of -55℃ to 125℃: the TCR difference in the positive temperature range is 0~5ppm / ℃; and the absolute value of the TCR difference in the positive and negative temperature ranges is ≤5ppm / ℃.

[0088] Example 3:

[0089] The fabrication method of metal film resistors includes the following steps: Step 1: Selecting the substrate The substrate is a high-purity ceramic substrate with a high aluminum content, with a purity > 95% and an alumina content > 95%.

[0090] The substrate was immersed in an 8% alkaline mixed cleaning solution (a mixture of NaOH and Na2CO3 in a mass ratio of 2:1) at 55°C and ultrasonically cleaned for 18 minutes to remove surface oil and organic contaminants. It was then ultrasonically rinsed three times with deionized water to remove residual alkali. Next, it was ultrasonically cleaned with anhydrous ethanol for 10 minutes to further remove moisture and trace organic matter. Finally, the substrate was dried in a 120°C oven for 30 minutes to ensure that the surface water content of the substrate was ≤0.1% for later use.

[0091] Step 2: Selecting the target material The target material is a Cr-Si alloy, with a chromium content of 75 wt%, a silicon content of 20 wt%, and a yttrium content of 5 wt%.

[0092] The target material in this embodiment is the same model as the target material in other embodiments, but from a different batch.

[0093] Step 3: Vacuuming The cleaned and dried substrates are loaded into the vacuum chamber drum of the magnetron sputtering equipment, ensuring that each substrate rotates uniformly with the drum during sputtering to obtain thin films with excellent thickness consistency. After closing and locking the sputtering chamber, the high vacuum system is activated for evacuation. This process consists of two steps: Low vacuum: A mechanical pump is used to evacuate the chamber from atmospheric pressure to 10. -1 Pa.

[0094] High vacuum: Switch to a high vacuum pump such as a molecular pump or cryogenic pump to evacuate the chamber to a base vacuum of 5.0 × 10⁻⁶. -3 Pa.

[0095] Step 4: Magnetron sputtering treatment The substrate surface is treated by magnetron sputtering. S1, First magnetron sputtering stage: Argon (99.999% purity) was used as the sputtering gas and nitrogen was used as the reaction gas to perform magnetron sputtering on the substrate surface and form a first metal resistive film on the substrate surface. The argon gas flow rate was controlled at 80 sccm and the inlet time was 13 min; the nitrogen gas flow rate was controlled at 10 sccm and the inlet time was 13 min; the sputtering power was 300 W; and the deposition rate was controlled at 100 nm / h.

[0096] S2. Sampling and testing: After the first magnetron sputtering stage is completed, a sample is taken, and a precision resistor is used to test the temperature coefficient (TCR) range curve of the first metal resistive film in a wide temperature range of -55℃ to 125℃. The wide temperature range is divided into a positive temperature range of 25℃ to 125℃ and a negative temperature range of -55℃ to 25℃. Calculate the difference between the absolute value of the temperature coefficient TCR at 125℃ and the absolute value of the temperature coefficient TCR at 25℃ in the positive temperature range, and denote it as the positive temperature range TCR difference (TCR). 正温 ); TCR difference in the positive temperature range (TCR) 正温 = |TCR value at 125℃| -25℃ TCR value; The difference between the absolute value of the temperature coefficient TCR at -55℃ and the absolute value of the temperature coefficient TCR at 25℃ is calculated and denoted as the negative temperature zone TCR difference (TCR). 负温 ); TCR difference in negative temperature range (TCR) 负温 = |TCR value at -55℃|TCR value at -25℃; Calculate the absolute value of the difference between the TCR difference in the negative temperature zone and the TCR difference in the positive temperature zone, and record it as the absolute value of the TCR difference between the positive and negative temperature zones (ΔTCR). The absolute value of the TCR difference between the positive and negative temperature zones (ΔTCR) = |TCR difference in the negative temperature zone - TCR difference in the positive temperature zone|; The calculation results are shown in Table 5.

[0097] Table 5. ΔTCR of the third batch of targets in Example 3

[0098] According to Table 5, if the absolute value of the TCR difference between the positive and negative temperature zones (ΔTCR) is greater than 5, the second magnetron sputtering stage will be performed. S3, Second Magnetron Sputtering Stage Argon is used as the sputtering gas and nitrogen and / or oxygen is used as the reaction gas to perform magnetron sputtering on the surface of the substrate and form a second metal resistive film on top of the first metal resistive film. The argon gas flow rate was controlled at 65 sccm; the sputtering power was 300 W; the deposition rate was controlled at 100 nm / h; and the sputtering gas was introduced for the entire duration.

[0099] Following the procedure of adjusting the reaction gas, flow rate, and inlet time according to the absolute value of the TCR difference between the positive and negative temperature zones being greater than 20, the reaction gas is introduced.

[0100] Table 6. Conditions for introducing the reaction gas in Example 3

[0101] Step 5: Sampling After the second magnetron sputtering stage is completed, samples are taken, and the magnetron sputtered substrate is subjected to annealing, photolithography, electrode preparation, and coating with a protective film to prepare a metal film resistor. The temperature coefficient (TCR) range curve of the metal film resistor on the substrate surface is tested using a precision resistor in a wide temperature range of -55℃ to 125℃, and the absolute values ​​of the TCR difference in the positive temperature region, the TCR difference in the negative temperature region, and the TCR difference between the positive and negative temperature regions are calculated.

[0102] Calculations show that the TCR difference in the positive temperature range is 2, and the absolute value of the TCR difference in the positive and negative temperature ranges is 1. This indicates that after using the method of this application, the temperature coefficient TCR in the wide temperature range of -55℃ to 125℃ satisfies the following: the TCR difference in the positive temperature range is 0~5ppm / ℃; and the absolute value of the TCR difference in the positive and negative temperature ranges is ≤5ppm / ℃.

[0103] After the sputtering process in this step, a nitrogen-rich layer, a nitrogen-oxygen layer, a nitrogen-rich layer, an oxygen-rich layer, a nitrogen-rich layer, and an oxygen-rich layer are formed sequentially from the inside out on the surface of the substrate.

[0104] Step 6: Post-sputtering treatment After the substrate deposition is completed, turn off the power and gas supply, continue to evacuate for 10 minutes, and then slowly introduce nitrogen gas to normal pressure to avoid damage to the film layer due to sudden pressure changes. Then take out the substrate with film.

[0105] The substrate is placed in an annealing furnace, protected with nitrogen, and held at 300°C for 60 minutes, then cooled in the furnace.

[0106] Step 7: Subsequent Shaping After annealing, the substrate is coated with photoresist and then pre-baked, exposed, and developed. Spiral grooves are then created using ion etching. The resistance value accuracy is adjusted to ±0.1% by adjusting the groove parameters, and then the photoresist is removed.

[0107] Ag or Ni electrodes, 1-5 μm thick, are sputtered at both ends of the resistive film to ensure ohmic contact. Finally, the film is coated with epoxy resin or encapsulated in ceramic. Resistance, insulation, temperature resistance, and other indicators are then tested to select qualified products.

[0108] The final metal film resistor has the following temperature coefficient (TCR) in a wide temperature range of -55℃ to 125℃: the TCR difference in the positive temperature range is 0~5ppm / ℃; and the absolute value of the TCR difference in the positive and negative temperature ranges is ≤5ppm / ℃.

Claims

1. A method for fabricating a wide-temperature-range, low-TCR metal film resistor using adaptive magnetron sputtering, characterized in that: The method comprises the following steps: a target material is used to perform magnetron sputtering treatment on the surface of a substrate by a magnetron sputtering method; the magnetron sputtering treatment comprises sequentially performing a first magnetron sputtering stage and a second magnetron sputtering stage; the reaction step of the first magnetron sputtering stage is: argon gas is used as a sputtering gas, nitrogen gas or oxygen gas is used as a reaction gas, magnetron sputtering treatment is performed on the surface of the substrate, and a first metal resistance film is formed on the surface of the substrate; after the first magnetron sputtering stage is completed, a sample is taken, the temperature coefficient TCR range curve of the first metal resistance film in a wide temperature range of-55℃ to 125℃ is tested, the wide temperature range is divided into a positive temperature range of 25℃ to 125℃ and a negative temperature range of-55℃ to 25℃, and the positive temperature range TCR difference, the negative temperature range TCR difference, and the absolute value of the positive and negative temperature range TCR difference are calculated; when the absolute value of the positive and negative temperature range TCR difference is greater than 5, the second magnetron sputtering stage is performed; the reaction step of the second magnetron sputtering stage is: argon gas is used as a sputtering gas, nitrogen gas and / or oxygen gas is used as a reaction gas, magnetron sputtering treatment is performed on the surface of the substrate, and a second metal resistance film is formed above the first metal resistance film; after the second magnetron sputtering stage is completed, a sample is taken, the substrate subjected to the magnetron sputtering treatment is subjected to annealing treatment, photolithography treatment, and electrode preparation, a metal film resistor is prepared, the temperature coefficient TCR range curve of the metal film resistor in a wide temperature range of-55℃ to 125℃ is tested, and the temperature coefficient TCR in the wide temperature range of-55℃ to 125℃ satisfies that the positive temperature range TCR difference is 0 to 5ppm / ℃, and the absolute value of the positive and negative temperature range TCR difference is less than or equal to 5ppm / ℃.

2. The method according to claim 1, wherein the method is characterized by: The calculation method of the positive temperature range TCR difference, the negative temperature range TCR difference, and the absolute value of the positive and negative temperature range TCR difference is as follows: the absolute value of the temperature coefficient TCR value at 125℃ in the positive temperature range is subtracted from the temperature coefficient TCR value at 25℃, and the difference is recorded as the positive temperature range TCR difference; the absolute value of the temperature coefficient TCR value at-55℃ in the negative temperature range is subtracted from the temperature coefficient TCR value at 25℃, and the difference is recorded as the negative temperature range TCR difference; the absolute value of the difference between the negative temperature range TCR difference and the positive temperature range TCR difference is calculated, and the difference is recorded as the absolute value of the positive and negative temperature range TCR difference.

3. The method according to claim 1, wherein the method is characterized by: In the first magnetron sputtering stage, the flow rate of the sputtering gas is 30 to 80sccm, the sputtering gas is introduced for 5 to 20 minutes, the flow rate of the reaction gas is 1 to 10sccm, and the reaction gas is introduced for 5 to 20 minutes; in the second magnetron sputtering stage, the flow rate of the sputtering gas is 50 to 75sccm.

4. The method according to claim 1, wherein the method is characterized by: When the first magnetron sputtering stage, 5 < the absolute value of the positive and negative temperature range TCR difference ≤ 10, the step of introducing the reaction gas in the second magnetron sputtering stage is as follows: first stage: nitrogen gas is introduced, the flow rate is 5 to 15sccm, and the introduction time is 40 to 60 minutes; second stage: nitrogen gas and oxygen gas are introduced, the flow rate ratio of the nitrogen gas and the oxygen gas is (10 to 15):1, and the introduction time is 10 to 20 minutes; The third stage is to introduce nitrogen gas, the flow rate of which is 5-15 sccm, and the time of which is 40-60 min; The fourth stage is to introduce nitrogen gas and oxygen gas, the flow rate of which is (10-15):1, and the time of which is 10-20 min; The fifth stage is to introduce nitrogen gas, the flow rate of which is 5-15 sccm, and the time of which is 40-60 min; The sixth stage is to introduce nitrogen gas and oxygen gas, the flow rate of which is (10-15):1, and the time of which is 10-20 min.

5. The method according to claim 1, wherein the method is characterized in that: When the absolute value of the TCR difference between the positive and negative temperature zones is 10-20 in the first magnetron sputtering stage, the steps of introducing the reaction gas in the second magnetron sputtering stage are as follows: The first stage is to introduce nitrogen gas, the flow rate of which is 5-15 sccm, and the time of which is 40-60 min; The second stage is to introduce nitrogen gas and oxygen gas, the flow rate of which is (10-15):1, and the time of which is 10-20 min; The third stage is to introduce nitrogen gas, the flow rate of which is 5-15 sccm, and the time of which is 40-60 min; The fourth stage is to introduce nitrogen gas and oxygen gas, the flow rate of which is (10-15):1, and the time of which is 10-20 min; The fifth stage is to introduce nitrogen gas, the flow rate of which is 5-15 sccm, and the time of which is 40-60 min; The sixth stage is to introduce oxygen gas, the flow rate of which is 1-3 sccm, and the time of which is 10-20 min.

6. The method according to claim 1, wherein the method is characterized by: When the absolute value of the TCR difference between the positive and negative temperature zones is >20 in the first magnetron sputtering stage, the steps of introducing the reaction gas in the second magnetron sputtering stage are as follows: The first stage is to introduce nitrogen gas, the flow rate of which is 5-15 sccm, and the time of which is 40-60 min; The second stage is to introduce nitrogen gas and oxygen gas, the flow rate of which is (10-15):1, and the time of which is 10-20 min; The third stage is to introduce nitrogen gas, the flow rate of which is 5-15 sccm, and the time of which is 40-60 min; The fourth stage is to introduce oxygen gas, the flow rate of which is 1-3 sccm, and the time of which is 10-20 min; The fifth stage is to introduce nitrogen gas, the flow rate of which is 5-15 sccm, and the time of which is 40-60 min; The sixth stage is to introduce oxygen gas, the flow rate of which is 1-3 sccm, and the time of which is 10-20 min.

7. The method according to any one of claims 1-6, wherein the method is a self- adaptive magnetron sputtering method for preparing a wide-temperature-range low-TCR metal film resistor, characterized in that: The substrate comprises at least one of a ceramic substrate, a silicon substrate, a glass substrate and an organic polymer substrate.

8. The method according to any one of claims 1-6, wherein the method is a self- adaptive magnetron sputtering method for preparing a wide-temperature-range low-TCR metal film resistor, characterized in that: The target material comprises at least one of a metal target material, an oxide target material, a nitride target material and a metal silicide target material.

9. The method according to any one of claims 8, wherein the method is a self- adaptive magnetron sputtering method for fabricating a wide-temperature-range low-TCR metal film resistor, characterized in that: The metal target material comprises at least one of Cr, Si, Al, Mn, Zr, Ti, Ta, W, Y and an alloy thereof.

10. A metal film resistor characterized by: The metal film resistor comprises: a substrate; a composite metal resistance film formed on the surface of the substrate, wherein the composite metal resistance film is composed of a first metal resistance film and a second metal resistance film, and the first metal resistance film and the second metal resistance film are prepared by the method of any one of claims 1-9; and electrodes formed on both sides of the composite metal resistance film. The composite metal resistance film is at least one of a nitrogen-rich layer, a nitrogen-oxygen layer, and an oxygen-rich layer.

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