Manufacturing method of superconducting quantum device and superconducting quantum device

By moving the resistive layer process forward and employing vertical etching in the Josephson junction manufacturing process, the issues of conductor layer inductance deviation and equipment requirements were resolved, enabling high-precision inductors and low-cost production.

CN121969017APending Publication Date: 2026-05-01NATIONAL INSTITUTE OF METROLOGY CHINA +2
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Patent Information

Application Number
CN202511899247.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2025-12-05
Filing Date
2025-12-16
Publication Date
2026-05-01

AI Technical Summary

Technical Problem

In the manufacturing process of Josephson junctions, the tilted etching process causes a large deviation in the inductance of the conductor layer, requiring the deposition of a thick resistive layer and the removal of oxides by particle beam bombardment, which increases equipment requirements.

Method used

By moving the resistive layer manufacturing process forward to before the conductive layer deposition process and using a vertical etching process, the limitations on the resistive layer thickness are reduced, particle beam bombardment is avoided, and the inductance accuracy of the conductive layer is improved.

Benefits of technology

Reduce production costs, increase device integration, reduce equipment functional requirements, improve inductance accuracy, and avoid the effects of photoresist residue.

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Abstract

The invention provides a manufacturing method of a superconducting quantum device and the superconducting quantum device. The manufacturing method comprises the steps that a Josephson junction is formed on a substrate, and a lower superconducting layer of the Josephson junction extends out of a barrier layer and an upper superconducting layer of the Josephson junction in the transverse direction; forming a resistance layer on the substrate, wherein the resistance layer is separated from the Josephson junction in the transverse direction; forming an insulating layer on the substrate to cover the Josephson junction and the resistive layer; forming through holes in the insulating layer, wherein the through holes comprise a first through hole for exposing the upper superconducting layer, a second through hole for exposing the lower superconducting layer and a third through hole for exposing the resistive layer; and forming a lead layer on the insulating layer in which the through holes are formed, the lead layer including a portion filled in the first through hole, the second through hole, and the third through hole and continuously extending between the second through hole and the third through hole to electrically connect the lower superconducting layer and the resistive layer of the Josephson junction.
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