Multi-acid-group photoelectric functional material with reverse photoconduction programmable switching characteristic and preparation method and application thereof

Abstract

The invention belongs to the technical field of photoelectric functional materials, and discloses a multi-acid-group photoelectric functional material with a reverse photoconduction programmable switching characteristic, and a preparation method and application of the multi-acid-group photoelectric functional material. The polyacid-based photoelectric functional material with the reverse photoconduction programmable switching characteristic is inorganic-organic hybrid polyniobium oxysalt, the chemical composition of the polyacid-based photoelectric functional material is [Ni (BTP)] 4 [Nb10O26]. 35H2O, BTP is a Bis-tris propane organic ligand, and the Bis-tris propane organic ligand is a Bis-tris propane organic ligand. When the multi-acid-group photoelectric functional material with the reverse photoconduction programmable switching characteristic is constructed into a photoelectric device and applied with external bias voltage and illumination, the photoconduction response polarity can be reversibly switched between positive photoconduction and reverse photoconduction, and reversible switching is regulated and controlled by excitation light wavelength and environment relative humidity. The method has important application value in the fields of photoelectric detection, environment sensing and multi-stimulus response optoelectronic devices.

Description

Technical Field

[0001] This invention belongs to the field of optoelectronic functional materials technology, specifically relating to a multi-acid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics, its preparation method, and its application. Background Technology

[0002] The photoconductivity effect is a fundamental physical process in optoelectronic devices. Traditional photoconductor materials mostly exhibit positive photoconductivity behavior, with increased conductivity under illumination. Photodetectors based on this effect have been widely used in environmental sensing, information acquisition, and other fields. However, as optoelectronic devices develop towards multifunctionality and intelligence, a single positive photoconductivity response can no longer meet the needs of signal modulation and multi-state information processing.

[0003] Inverse photoconductivity is an anomalous photoelectric response behavior in which the conductivity of a material decreases under illumination, and it has potential applications in optical switches, multi-state logic, and multi-stimulus response devices. Currently, inverse photoconductivity is mainly reported in low-dimensional semiconductor materials or heterostructure systems. Its formation mechanism involves carrier trapping, charge transfer, interface state modulation, or photothermal effects. However, these systems often rely on complex material structures or interface designs, resulting in limited stability and repeatability of the inverse photoconductivity response, and it is difficult to achieve controllable switching between positive and inverse photoconductivity in a single material system.

[0004] Polyoxometalates (polyacids) are discrete metal-oxygen clusters formed by the condensation of high-valence transition metals and oxygen atoms. They possess well-defined molecular structures, tunable electronic structures, and good chemical stability. Among them, polyniobium oxometalates, compared to bulk niobium oxide, have higher surface charge density and abundant terminal oxygen atoms. Their electronic structure and surface chemistry can be tunable at the molecular level, and they exhibit high responsiveness to light and environmental stimuli, providing a new material basis for regulating charge carrier behavior.

[0005] However, current research on polyoxometalates is still focused on positive photoconductivity, with limited systematic studies on inverse photoconductivity and its polarity regulation. Controllable switching of photoconductivity response polarity under different stimuli has not yet been achieved in structurally stable polyoxometalate systems, and the underlying regulatory mechanism remains unclear. Therefore, developing a photoelectric functional material based on polyniobium oxyphosphates to achieve reversible regulation of positive and inverse photoconductivity is of great significance for expanding the application of polyoxometalates in novel optoelectronic devices. Summary of the Invention

[0006] To address the aforementioned problems, this invention proposes a multi-acid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics, its preparation method, and its applications.

[0007] To achieve the above objectives, the present invention adopts the following technical solution: A multi-acid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics, wherein the multi-acid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics is an inorganic-organic hybrid polyniobium oxyacid salt with the chemical composition [Ni(BTP)]4[Nb 10 O 26 ]·35H2O, wherein BTP is a Bis-tris propane organic ligand; the multi-acid-based optoelectronic functional material with reversible photoconductivity programmable switching characteristics, when constructed as an optoelectronic device and subjected to an external bias voltage and illumination, can reversibly switch its photoconductivity response polarity between positive photoconductivity and reversible photoconductivity, and the reversible switching is modulated by the excitation wavelength and the relative humidity of the environment.

[0008] Preferably, the crystal structure of the polyacid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics belongs to the orthorhombic crystal system, and the space group is [missing information]. P ccn, cell parameters are: a =25.7244(11), b =31.1990(13), c =13.5815(6), α = β = γ =90°.

[0009] Preferably, the polyacid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics exhibits a reverse photoconductivity response under illumination conditions with a wavelength of not less than 600 nm and an environmental condition with a relative humidity of not less than 50%RH, and exhibits a positive photoconductivity response under illumination conditions with a wavelength of not more than 550 nm and an environmental condition with a relative humidity of not more than 40%RH, and the crystal structure remains stable before and after light stimulation and environmental stimulation.

[0010] A method for preparing a multi-acid-based optoelectronic functional material with reverse photoconductivity programmable switching properties includes the following steps: S1. Under alkaline conditions, a chemical conversion was carried out using Nb₂O₅ as the starting material to prepare the polyniobium oxoate precursor K₇HNb₆O. 19 ·13H2O; S2, the polyniobium oxyphosphate precursor K7HNb6O 19 ·13H2O, nickel acetate hydrate, organic ligand Bis-trispropane, succinic acid and sodium bisulfite were added to sodium carbonate-sodium bicarbonate buffer solution. The pH of the reaction system was controlled. After stirring and mixing evenly at room temperature, the reaction system was sealed in a glass bottle. S3. Place the glass bottle in an oven for a hydrothermal reaction; S4. Cool the glass bottle after the hydrothermal reaction to room temperature, filter it, and let the resulting filtrate evaporate and crystallize under static conditions to obtain a crystalline polyacid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics.

[0011] Preferably, in step S2, the polyniobium oxoate precursor K7HNb6O 19 The molar ratio of ·13H2O, nickel acetate hydrate, organic ligand Bistris propane, succinic acid, and sodium bisulfite is 146:402:354:169:192.

[0012] Preferably, in step S2, the pH of the reaction system is controlled to be 10.5.

[0013] Preferably, in step S3, the hydrothermal reaction temperature is 80°C and the reaction time is 3 days.

[0014] Preferably, in step S4, the filtrate is allowed to stand at room temperature for 2 weeks to evaporate and crystallize.

[0015] An application of a polyacid-based optoelectronic functional material with reversible photoconductivity programmable switching characteristics is disclosed. This polyacid-based optoelectronic functional material with reversible photoconductivity programmable switching characteristics is used to construct optoelectronic devices. It can achieve reversible control of photoconductivity response polarity under external bias and illumination conditions, and is suitable for the fields of photoelectric detection, environmental sensing and multi-stimulus response optoelectronic devices.

[0016] Preferably, the method for constructing the optoelectronic device is as follows: a polyacid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics is dissolved in a 0.1 M Na2CO3 / NaHCO3 buffer solution with pH=10.5 to form a uniform precursor solution, and then the precursor solution is drop-coated onto the surface of the interdigitated electrode. After drying to remove the solvent, an active thin film layer is formed on the electrode surface to obtain the optoelectronic device.

[0017] By adopting the above technical solution, the present invention has the following beneficial effects: 1. This invention achieves fully reversible switching between positive and negative photoconductivity in a single multi-acid material system, breaking through the limitation of traditional multi-acid optoelectronic materials that only exhibit positive photoconductivity. Moreover, the switching process is synergistically regulated by the excitation wavelength and ambient humidity, providing a new material basis for the development of multi-state optoelectronic devices.

[0018] 2. The multi-acid-based optoelectronic functional material of the present invention, which has reverse photoconductivity and programmable switching characteristics, is an inorganic-organic hybrid structure, consisting of Ni4Nb 10 The building blocks are assembled through hydrogen bonding, resulting in a stable crystal structure. The structure does not change significantly before and after light stimulation and environmental stimulation. Furthermore, it exhibits good structural stability in various organic solvents such as ethanol, butanol, and acetonitrile, ensuring the stability and repeatability of the photoelectric response.

[0019] 3. The preparation method of the present invention adopts hydrothermal synthesis, using Nb2O5 as the starting material, preparing the precursor through alkaline conversion, and then obtaining the product through coordination assembly, chemical end-capping and hydrothermal crystallization. The reaction conditions are mild (stirring at room temperature, hydrothermal at 80°C), the raw material ratio is clear, the reaction process is easy to control, and it is suitable for large-scale preparation.

[0020] 4. The polyacid-based optoelectronic functional material of the present invention, which has the characteristics of reverse photoconductivity and programmable switching, has good response characteristics to both light wavelength and ambient humidity. The optoelectronic device constructed therein has a stable photoelectric response in the visible to near-infrared band and can achieve accurate humidity sensing. It can be widely used in the fields of photoelectric detection, environmental sensing and multi-stimulus response optoelectronic devices, thus expanding the application scope of polyacid materials in the optoelectronic field. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of the crystal morphology of the polyacid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics of the present invention, and the structure of the optoelectronic device constructed based on the material. Figure 2 The crystal structure diagram shows the polyacid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics prepared in this invention. Figure 3 The powder X-ray diffraction pattern and organic solvent stability test results of the polyacid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics of the present invention are shown below. Figure 4 The infrared spectrum of the multi-acid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics prepared in this invention; Figure 5 The ultraviolet absorption spectrum of the polyacid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics prepared in this invention; Figure 6 Photocurrent diagrams of the polyacid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics prepared in this invention under different atmospheres and humidity conditions. Figure 7 The current response curves of the polyacid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics of the present invention under different relative humidity conditions are shown. Figure 8 The photocurrent response curves of the polyacid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics of the present invention are shown under different excitation wavelengths and relative humidity conditions. Detailed Implementation

[0022] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to examples. It should be understood that the specific examples described herein are merely illustrative and not intended to limit the invention.

[0023] Unless otherwise stated, the raw materials and reagents used in the following examples are commercially available products or can be prepared by known methods.

[0024] See Figures 1 to 8 .

[0025] Example 1: Polyacid-based optoelectronic functional material [Ni(BTP)]4[Nb 10 O 26 Preparation of ·35H2O S1. Under alkaline conditions, a chemical conversion was carried out using Nb₂O₅ as the starting material to prepare the polyniobium oxoate precursor K₇HNb₆O. 19 ·13H2O, the synthesis method of which can be found in the following references: Filowitz, M.; Ho, RKC; Klemperer, WG; hum, W. Inorganic Chemistry The method reported in 1979, 18, 93–103 was used; S2, the polyniobium oxyphosphate precursor K7HNb6O 19 • 13H₂O, nickel acetate hydrate, the organic ligand Bis-trispropane, succinic acid, and sodium bisulfite were added to a sodium carbonate-sodium bicarbonate buffer solution. The pH of the reaction system was controlled at 10.5. After thorough mixing at room temperature, the reaction system was sealed in a glass bottle. The polyniobium oxyacid precursor K₇HNb₆O₃ was also included. 19 The molar ratio of ·13H2O, nickel acetate hydrate, organic ligand Bistris propane, succinic acid, and sodium bisulfite is 146:402:354:169:192. S3. Place the glass bottle in an oven for hydrothermal reaction; the reaction temperature is 80℃ and the reaction time is 3 days. S4. Cool the glass bottle after the hydrothermal reaction to room temperature, filter it, and allow the filtrate to evaporate and crystallize for 2 weeks under static conditions to obtain blue blocky crystals, which is the crystalline polyacid-based optoelectronic functional material [Ni(BTP)]4[Nb] with reverse photoconductivity and programmable switching properties. 10 O 26 ]·35H2O, such as Figure 1 As shown.

[0026] Example 2: Characterization of the structure and properties of the material

[0027] The blue bulk crystals prepared in Example 1 were characterized structurally and tested for performance. The specific test methods and results are as follows: (1) Determination of crystal structure Select appropriately sized, regularly shaped, and transparent single crystals under a microscope, and then monochromate them using a Bruker APEX II CCD diffractometer with a graphite monochromator to detect Mo-Kα rays. λ = 0.71073 Å) was used as the incident light source to collect crystal diffraction data. The Shelextl-97 program was used for direct analysis and refinement of the crystal structure. The results show that the crystal belongs to the orthorhombic crystal system with space group . P ccn, cell parameters are: a =25.7244(11), b =31.1990(13), c =13.5815(6), α = β = γ =90°, molecular formula is C 44 H 130 N8Nb 10 Ni4O 67 With a relative molecular mass of 3007.49, the crystal structure is composed of Ni4Nb 10 The building blocks are assembled through hydrogen bonds, resulting in a stable structure. The resulting crystal structure diagram is shown below. Figure 2 As shown (where for clarity, Figure 2 (Hydrogen atoms are not shown). Some crystallographic data and refinement parameters are shown in Table 1.

[0028] Table 1: Crystal parameters of the compounds

[0029] (2) Powder X-ray diffraction characterization: The obtained single-crystal sample was ground into powder and subjected to powder X-ray diffraction testing at room temperature. Figure 3 As shown, the powder diffraction pattern obtained in the experiment is basically consistent with the diffraction peak positions simulated using Mercury software based on single-crystal structure data, indicating that the obtained compound has good crystallinity and is a pure-phase product. The differences in intensity of some diffraction peaks may be related to crystal anisotropy and sample orientation effects. Further powder diffraction tests were performed after immersing the sample in organic solvents such as ethanol, 1-butanol, acetonitrile, acetone, and cyclohexane. The diffraction peak positions were basically consistent with the original sample, indicating that this multi-acid-based optoelectronic functional material with reversible photoconductivity programmable switching characteristics has good structural stability in various organic solvent environments.

[0030] (3) Infrared spectral characterization: like Figure 4 As shown, multi-acid-based optoelectronic functional materials with reverse photoconductivity programmable switching characteristics are observed at approximately 3200 cm⁻¹. -1 The broad absorption band at approximately 3140 cm⁻¹ is mainly attributed to the ν(O–H) stretching vibrations of water molecules and hydroxyl groups in the crystal lattice; -1 and 2989 cm -1 The absorption peaks at these locations are attributed to the stretching vibrations of ν(C–H) and ν(N–H) in the organic ligands, respectively, while the bending vibration peak is located at approximately 1600 cm⁻¹. -1 and 1100 cm -1 Nearby. 1240 cm -1 and 1040 cm -1 The absorption peak at 1300–900 cm⁻¹ is attributed to the ν(C–N) stretching vibration in the Bis-tris propane ligand. -1 Within the range, approximately 1020 cm -1 The presence of a moderate-intensity absorption peak at 1000–400 cm⁻¹ is mainly attributed to the stretching vibrations of short Nb–O bonds in the polyniobium oxoate framework, accompanied by the superposition of some ligand C–O / C–N vibrations. -1 The strong absorption peaks within the range are characteristic peaks of the Nb–O framework vibration, with the peak at 861 cm⁻¹ being the most prominent. -1 The stretching vibrations at the corresponding terminal Nb–O bonds, and 616 cm -1 and 473 cm -1 The absorption peak at this point is attributed to the stretching vibration of the bridging Nb–O–Nb. These characteristic absorptions indicate that the polyniobium oxoate framework structure remains stable in polyoxo-based optoelectronic functional materials with programmable switching properties of reverse photoconductivity.

[0031] (4) Ultraviolet absorption spectroscopy characterization: like Figure 5 As shown, the multi-acid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics exhibits continuous absorption characteristics in the ultraviolet to near-infrared region (200-1200 nm). A strong absorption band exists in the approximately 220-300 nm range, mainly attributed to the O→Nb charge transfer transition in the polyniobium oxoate framework; a broad and gentle absorption peak appears near approximately 600 nm in the visible light region, which can be attributed to Ni. 2+ The material exhibits center-dependent d–d transitions. A weak but continuous absorption band is still observed in the 800–1100 nm near-infrared region, indicating that the material retains photoresponse capability in the long-wavelength region. These absorption characteristics give the material a distinct blue appearance, consistent with… Figure 1 The medium-blue blocky crystals have a consistent color.

[0032] (5) Construction method of optoelectronic devices based on multi-acid-based optoelectronic functional materials with reverse photoconductivity programmable switching characteristics: A multi-acid-based optoelectronic functional material with reverse photoconductivity and programmable switching characteristics is dissolved in a 0.1 M Na2CO3 / NaHCO3 buffer solution with pH=10.5. The solution is stirred or sonicated to form a uniformly dispersed precursor solution. An appropriate amount of the precursor solution is drop-coated onto the surface of an interdigital electrode. After drying to remove the solvent, an active thin film layer is formed on the electrode surface to obtain an optoelectronic device.

[0033] (6) Photocurrent response characterization: Optoelectronic devices were constructed using polyacid-based optoelectronic functional materials with reverse photoconductivity and programmable switching characteristics, and photocurrent tests were conducted under different atmospheres and relative humidity conditions. For example... Figure 6 As shown, in Figure 6 The red curve represents the decrease in current under illumination, corresponding to the inverse photoconductivity response; the blue curve represents the increase in current under illumination, corresponding to the positive photoconductivity response. At 55% relative humidity, the device exhibits a stable and repeatable periodic photocurrent response in both air and nitrogen atmospheres. When the relative humidity increases to 75%, the current shows a significant trend over time during illumination, and the signal exhibits good reversibility during the switching light cycle. Comparing the test results under air and nitrogen environments shows that the material maintains stable photoconductivity behavior under different atmospheric conditions, indicating that this multi-acid-based optoelectronic functional material with inverse photoconductivity programmable switching characteristics has good environmental adaptability and stable photoconductivity response characteristics.

[0034] (7) Characterization of humidity response current: Optoelectronic devices were constructed using polyacid-based optoelectronic functional materials with reverse photoconductivity and programmable switching characteristics, and current tests were conducted under different relative humidity conditions. For example... Figure 7 As shown, the device current exhibits a gradual change trend as the relative humidity increases from low to high, demonstrating stable and repeatable response signals under relative humidity conditions of 2%, 4%, 6%, 8%, and 10%. When the relative humidity further increases to a high-humidity environment, the current significantly increases, indicating that this polyacid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics has good responsiveness and stability to changes in environmental humidity. These results demonstrate that this polyacid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics can generate tunable electrical responses under different humidity conditions.

[0035] (8) Characterization of photoelectric response by synergistic regulation of wavelength and humidity: Optoelectronic devices were constructed using polyacid-based optoelectronic functional materials with reverse photoconductivity and programmable switching characteristics, and photocurrent tests were conducted under different excitation wavelengths and relative humidity conditions. For example... Figure 8 As shown, in Figure 8The red curve represents the decrease in current under illumination, corresponding to the inverse photoconductivity response; the blue curve represents the increase in current under illumination, corresponding to the positive photoconductivity response. Under relative humidity conditions of 15%, 35%, 55%, and 75%, the device exhibits stable and repeatable photocurrent responses at different wavelengths of illumination, including 380 nm, 450 nm, 520 nm, 635 nm, 730 nm, and 808 nm. The photocurrent signal shows significant differences with variations in excitation wavelength and ambient humidity, indicating that this multi-acid-based optoelectronic functional material with programmable switching characteristics of inverse photoconductivity possesses tunable photoconductivity response behavior under multiple stimuli, enabling adjustment between different photoconductivity states.

[0036] It can be seen that, under an applied bias voltage, the obtained optoelectronic device can achieve programmable switching between positive and negative photoconductivity by adjusting the excitation wavelength and ambient humidity. In the field of photoelectric detection, it can realize differentiated identification of multi-band optical signals. In the field of environmental sensing, it can realize dual-parameter sensing of humidity and optical signals. At the same time, it can be applied to the core active layer of multi-stimulus response optoelectronic devices to realize the regulation and processing of multi-state logic signals.

[0037] The above description is merely a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A multi-acid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics, characterized in that: The multi-acid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics is an inorganic-organic hybrid polyniobium oxyacid salt with the chemical composition [Ni(BTP)]4[Nb 10 O 26 ]·35H2O, wherein BTP is a Bis-tris propane organic ligand; the multi-acid-based optoelectronic functional material with reversible photoconductivity programmable switching characteristics, when constructed as an optoelectronic device and subjected to an external bias voltage and illumination, can reversibly switch its photoconductivity response polarity between positive photoconductivity and reversible photoconductivity, and the reversible switching is modulated by the excitation wavelength and the relative humidity of the environment.

2. The multi-acid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics as described in claim 1, characterized in that, The crystal structure of the polyacid-based optoelectronic functional material with reverse photoconductivity and programmable switching characteristics belongs to the orthorhombic crystal system, and its space group is [space group missing]. P ccn, cell parameters are: a =25.7244(11), b =31.1990(13), c =13.5815(6), α = β = γ =90°.

3. The polyacid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics as described in claim 1, characterized in that: The polyacid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics exhibits a reverse photoconductivity response under illumination conditions with a wavelength of not less than 600 nm and an environmental environment with a relative humidity of not less than 50%RH, and exhibits a positive photoconductivity response under illumination conditions with a wavelength of not more than 550 nm and an environmental environment with a relative humidity of not more than 40%RH, and the crystal structure remains stable before and after light stimulation and environmental stimulation.

4. A method for preparing a polyacid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics as described in any one of claims 1-3, characterized in that, Includes the following steps: S1. Under alkaline conditions, a chemical conversion was carried out using Nb₂O₅ as the starting material to prepare the polyniobium oxoate precursor K₇HNb₆O. 19 ·13H2O; S2, the polyniobium oxyphosphate precursor K7HNb6O 19 ·13H2O, nickel acetate hydrate, organic ligand Bis-trispropane, succinic acid and sodium bisulfite were added to sodium carbonate-sodium bicarbonate buffer solution. The pH of the reaction system was controlled. After stirring and mixing evenly at room temperature, the reaction system was sealed in a glass bottle. S3. Place the glass bottle in an oven for a hydrothermal reaction; S4. Cool the glass bottle after the hydrothermal reaction to room temperature, filter it, and let the resulting filtrate evaporate and crystallize under static conditions to obtain a crystalline polyacid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics.

5. The method for preparing a polyacid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics as described in claim 4, characterized in that: In step S2, the polyniobium oxoate precursor K7HNb6O 19 The molar ratio of ·13H2O, nickel acetate hydrate, organic ligand Bistris propane, succinic acid, and sodium bisulfite is 146:402:354:169:

192.

6. The method for preparing a polyacid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics as described in claim 4, characterized in that: In step S2, the pH of the reaction system is controlled to be 10.

5.

7. The method for preparing a multi-acid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics as described in claim 4, characterized in that: In step S3, the hydrothermal reaction temperature is 80°C and the reaction time is 3 days.

8. The method for preparing a polyacid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics as described in claim 4, characterized in that: In step S4, the filtrate is allowed to stand at room temperature for 2 weeks to evaporate and crystallize.

9. An application of a polyacid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics as described in any one of claims 1-3, characterized in that: The multi-acid-based optoelectronic functional material with reversible photoconductivity programmable switching characteristics is used to construct optoelectronic devices. It can achieve reversible control of photoconductivity response polarity under external bias and illumination conditions, and is suitable for the fields of photoelectric detection, environmental sensing and multi-stimulus response optoelectronic devices.

10. The application of the polyacid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics as described in claim 9, characterized in that, The method for constructing the optoelectronic device is as follows: a polyacid-based optoelectronic functional material with reverse photoconductivity programmable switching characteristics is dissolved in a 0.1 M Na2CO3 / NaHCO3 buffer solution with pH=10.5 to form a uniform precursor solution. The precursor solution is then drop-coated onto the surface of the interdigitated electrode. After drying to remove the solvent, an active thin film layer is formed on the electrode surface to obtain the optoelectronic device.

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