Carrier wafer system with high-temperature heat insulation structure

Abstract

The invention discloses a carrier wafer system with a high-temperature heat insulation structure, which is characterized by comprising a wafer main body, a temperature measuring device, a battery, a main control circuit, a box and a supporting structure, a customized high-temperature heat insulation structure is arranged in the box, the interior of the high-temperature heat insulation structure is divided into a battery independent cavity and a main control circuit cavity which are mutually independent, the battery is loaded in the battery independent cavity in a sealed mode, and the main control circuit is loaded in the main control circuit cavity in a sealed mode; the box is fixedly connected to the surface of the wafer main body through the supporting structure, and the temperature measuring device is arranged on the surface of the wafer main body and is electrically connected with the main control circuit. The device is good in stability, successfully solves the problems of inconvenience in temperature measurement, influence on a gas flow field, long cooling time and the like in the prior art, and provides a more efficient and accurate temperature measurement solution for the field of semiconductor processing.

Description

Technical Field

[0001] This invention relates to the field of semiconductor fabrication technology, and more specifically to a carrier wafer system. Background Technology

[0002] In semiconductor wafer fabrication, the temperature uniformity of the semiconductor vacuum high-temperature chamber directly affects the wafer processing quality. Therefore, accurate and real-time measurement of the chamber temperature is a critical step in semiconductor fabrication. Currently, the industry mainly uses wired thermocouples to measure the temperature of the semiconductor chamber. However, this method has several technical drawbacks: First, the wired connection means the vacuum chamber cannot be completely sealed, which not only disrupts the vacuum environment but also affects the gas flow field inside the chamber, leading to an imbalance in the temperature environment during wafer processing. Second, the operation process for wired temperature measurement is cumbersome, and it takes several hours for the chamber to cool from its operating temperature to a safe operating temperature after measurement, significantly reducing the production efficiency of semiconductor processing.

[0003] To address the aforementioned issues, the inventors previously disclosed a high-temperature, high-precision wireless temperature measurement device for semiconductor vacuum high-temperature chambers (Chinese Patent Publication No. CN119245868A). This device collects temperature data through a temperature-sensing circuit on the wafer surface, processes the data through a control system, and transmits it wirelessly to a computer, achieving wireless temperature measurement and avoiding the impact of wired connections on chamber sealing. However, this existing technology still has several key technical defects: First, the heat insulation structure is an integral design, with no separate protection for the battery and main control circuit. The heat generated by the main control circuit is easily transferred to the battery, affecting its charging and discharging performance and lifespan. Second, the heat insulation structure only protects against heat conduction, without considering the damage to the battery caused by the strong heat radiation from the semiconductor chamber. High-temperature heat radiation can easily lead to aging of the battery's internal materials, resulting in a significant decrease in cycle charging and discharging performance. Third, the heat insulation protection for core electronic components lacks customized design. It does not incorporate the different high-temperature resistance characteristics and heat protection requirements of the battery and main control circuit into a targeted structural design, resulting in poor heat insulation performance. Electronic components are easily damaged by high temperatures, and the system's high-temperature resistance and operational stability are poor.

[0004] Therefore, there is an urgent need to develop a wireless temperature measurement carrier wafer system that combines zoned heat insulation, specific protection against thermal radiation, and customized heat conduction blocking. Without affecting the chamber sealing and gas flow field, a customized heat insulation structure should be designed for the different thermal protection needs of the battery and the main control circuit to achieve stable and accurate temperature measurement in high-temperature environments, while effectively protecting core electronic components from damage caused by high temperatures and thermal radiation. Summary of the Invention

[0005] The purpose of this invention is to provide a carrier wafer system with a high-temperature thermal insulation structure that avoids the impact on the chamber seal, effectively delays heat transfer, protects core electronic components, and improves the stability and reliability of the system, in order to overcome the shortcomings of the prior art.

[0006] This invention achieves the above objectives using the following technical solution: a carrier wafer system with a high-temperature thermal insulation structure, characterized in that it includes a wafer body, a temperature sensing device, a battery, a main control circuit, a box, and a support structure; the box has a customized high-temperature thermal insulation structure inside, which is designed in zones based on the different thermal protection requirements of the battery and the main control circuit, internally divided into independent battery cavities and main control circuit cavities. The battery is sealed and installed in the independent battery cavity, and the main control circuit is sealed and installed in the main control circuit cavity, achieving zoned thermal insulation protection for core electronic components; the box is fixedly connected to the surface of the wafer body through the support structure, ensuring the structural connection is robust while reducing heat conduction paths; the temperature sensing device is arranged on the surface of the wafer body and electrically connected to the main control circuit to realize the acquisition and wireless transmission of temperature signals.

[0007] As a further explanation of the above solution, a high thermal conductivity barrier layer is provided between the battery independent cavity and the main control circuit cavity. The high thermal conductivity barrier layer is preferably a copper or aluminum high thermal conductivity metal foil / barrier sheet, which is closely attached to the partition surface of the two cavities. It can quickly conduct the working heat generated by the main control circuit cavity to the outside of the heat insulation structure, realize the complete thermal isolation between the two cavities, effectively block the transfer of the working heat of the main control circuit to the battery independent cavity, avoid the working heat from affecting the charging and discharging temperature characteristics of the battery, and ensure the charging and discharging stability and service life of the battery in high temperature environment.

[0008] Furthermore, addressing the issue of damage to the battery caused by strong heat radiation from the semiconductor chamber, and considering the battery's heat radiation protection requirements, the battery's independent chamber adopts a customized dual-layer heat insulation structure consisting of an aerogel insulation layer and a reflective heat shield layer. The aerogel insulation layer is a silica aerogel insulation layer that fits tightly against the inner wall of the battery's independent chamber, covering the battery. Its thermal conductivity is ≤0.02W / (m·K), which can effectively block heat conduction. The reflective heat shield layer is a high-reflectivity metal foil layer such as aluminum foil or gold foil, which covers the outside of the aerogel insulation layer. Its reflectivity is ≥90%, which can directly block the strong heat radiation from the semiconductor chamber, preventing heat radiation from directly irradiating the battery and causing internal material aging. This specifically solves the problem of heat radiation damage to the battery and ensures the battery's cycle charge and discharge performance in high-temperature environments.

[0009] Furthermore, considering the high-temperature resistance and heat conduction protection requirements of the main control circuit, the main control circuit cavity is a multi-layer composite heat insulation structure with alternating layers of phase change material and heat insulation material. The phase change material layer and the heat insulation material layer are alternately stacked to form a tiered heat insulation structure system. The phase change material layer is made of bismuth alloy, which has a melting point of 80-120℃. By utilizing the characteristic of phase change material to absorb heat but maintain a stable temperature during phase change, the hysteresis of temperature transfer is increased. The heat insulation material layer is made of zirconia ceramic. By utilizing the low thermal conductivity of ceramic materials, the heat transfer rate is further slowed down. Through the synergistic effect of phase change material and ceramic heat insulation material, the temperature transferred from the surface of the wafer to the inside of the main control circuit cavity is significantly reduced, protecting the main control circuit from high-temperature damage.

[0010] Furthermore, the support structure includes support feet and a metal sheet. The bottom of the box is fixedly connected to the upper surface of the metal sheet via the support feet, and the lower surface of the metal sheet is fixedly connected to the surface of the wafer body, forming a connection structure of wafer body-metal sheet-support feet-box, which greatly improves the firmness of the box on the surface of the wafer body. The metal sheet is bonded to the wafer body with adhesive, and the type of adhesive is selected according to the working temperature. Organic adhesive is used for working environments below 250°C, and inorganic adhesive is used for working environments above 250°C, ensuring bonding stability under different temperature environments and reducing heat conduction paths.

[0011] Furthermore, ceramic gaskets are fixedly installed on both the inner wall of the high-temperature insulation structure and the surface of the wafer body. The ceramic gaskets serve the dual purpose of heat insulation and conductive connection, which can further reduce heat conduction. The main control circuit and the battery are electrically connected to the corresponding ceramic gaskets on the high-temperature insulation structure through double gold wires. The ceramic gaskets on the high-temperature insulation structure are then electrically connected to the ceramic gaskets on the wafer body through double gold wires, forming a complete circuit connection path. The connection process of the double gold wires adopts semiconductor wire bonding technology to ensure the reliability and conductivity of the connection. The design of double gold wires can improve the stability of the circuit. When one gold wire breaks, the other can still continue to work, preventing system circuit failure. When the system operating temperature is below 350°C, the double gold wires can be replaced with double aluminum wires to reduce production costs while ensuring circuit performance.

[0012] Furthermore, the wafer body is made of monocrystalline silicon material, which has good high temperature resistance and structural stability, making it suitable for the working environment of semiconductor vacuum high-temperature chambers. The surface circuit fabrication process of the wafer body is as follows: metal sintering after trenching → metal screen printing → metal deposition → metal deposition after etching. The surface circuit fabricated by this process has good conductivity and high temperature resistance. After the surface circuit is fabricated, the wafer body is annealed to effectively eliminate the internal stress generated during processing, further improve the structural stability of the wafer body, and avoid deformation and performance drift under high temperature environment.

[0013] To adapt to the usage requirements of different temperature environments, when the system operating temperature is below 250℃, the surface circuit of the wafer body is replaced with an FPC polyimide flexible circuit board. The flexible circuit board is directly pasted onto the surface of the wafer body, simplifying the manufacturing process and reducing production costs.

[0014] The battery is preferably a high-temperature resistant solid-state battery. Compared with traditional lithium batteries, solid-state batteries have higher high-temperature resistance and cycle charge-discharge stability, and can adapt to the working environment of high-temperature chambers. If other types of batteries are used, the upper limit of the system's temperature resistance will decrease, and the battery is prone to expansion in vacuum environment and under heated conditions, resulting in decreased system stability or even failure. The temperature measuring device is a platinum resistance thermometer, which is uniformly distributed on the surface of the wafer body to ensure the uniformity and accuracy of temperature acquisition.

[0015] Furthermore, the overall hierarchical structure of the high-temperature insulation structure from bottom to top is: wafer body surface → metal sheet → support foot → box bottom → zirconia ceramic insulation layer → bismuth alloy phase change material layer → box top. This multi-layer structure achieves overall step-by-step insulation, extends the heat transfer path, and increases the hysteresis of heat transfer. The distance between the box and the wafer body is strictly controlled at 3-5mm to reduce the efficiency of heat conduction and heat radiation. The surface of the wafer body is coated with a radiation emission coating, which significantly reduces the absorption efficiency of heat radiation by the wafer body and further reduces high-temperature transfer.

[0016] Furthermore, the main control circuit integrates a control module, a wireless signal transmitting module, and a wireless signal receiving module. The temperature signal collected by the temperature measuring device is processed by the control module and then wirelessly transmitted to an external computer, industrial control computer, or other terminal via the wireless signal transmitting module, enabling real-time display and storage of temperature data. Control commands from the external terminal can be transmitted to the control module via the wireless signal receiving module, enabling remote control of the system. The entire process is wireless, avoiding any impact on the chamber sealing and gas flow field.

[0017] The beneficial effects that can be achieved by adopting the above-mentioned technical solution in this invention are:

[0018] 1. This invention employs a carrier wafer system with a high-temperature insulation structure, mainly composed of a wafer body, temperature measuring device, battery, main control circuit, box, and support structure. Through wireless temperature measurement design, it abandons the wired connection method of traditional wired thermocouples, realizes the full sealing of the semiconductor vacuum high-temperature chamber, avoids the destruction of the gas flow field inside the chamber, ensures the stability of the temperature environment for wafer processing, simplifies the temperature measurement operation process, and greatly improves the production efficiency of semiconductor processing.

[0019] 2. This invention features a customized and innovative partitioned design for the high-temperature insulation structure, separating it into an independent battery cavity and a main control circuit cavity. A high thermal conductivity barrier layer is installed between the two cavities, achieving complete thermal isolation between the battery and the main control circuit. This effectively blocks the transfer of heat from the main control circuit to the battery, preventing heat from affecting the battery's charging and discharging temperature characteristics. Structurally, this invention solves the problem of thermal interference between core electronic components.

[0020] 3. This invention addresses the need for thermal radiation protection in batteries by designing a dual-layer structure of "aerogel insulation layer + reflective thermal shielding layer" for the battery's independent cavity. The silica aerogel achieves efficient thermal conduction blocking, while the high-reflectivity metal foil layer achieves strong thermal radiation blocking. This invention specifically solves the problem of damage to the battery caused by strong thermal radiation in the semiconductor cavity, effectively protects the internal materials of the battery from aging, and ensures the battery's cycle charge and discharge performance and service life under high-temperature environments.

[0021] 4. In view of the high temperature resistance characteristics of the main control circuit, the present invention designs a multi-layer structure in which the phase change material layer and the zirconium oxide ceramic heat insulation layer are alternately superimposed in the cavity of the main control circuit. By utilizing the temperature stability characteristics of the phase change heat absorption of bismuth alloy and the low thermal conductivity characteristics of ceramic materials, the heat insulation is achieved step by step, the heat transfer path is extended, and the heat transfer efficiency from the surface of the wafer to the cavity of the main control circuit is significantly reduced, effectively protecting the main control circuit from high temperature damage.

[0022] 5. This invention adopts a metal sheet-support foot support structure and selects organic / inorganic adhesives for bonding according to the working temperature, which not only ensures the firmness of the connection between the box and the wafer body, but also reduces the heat conduction path; at the same time, it adopts double gold wire semiconductor lead technology for circuit connection and ceramic pads to assist in heat insulation, which not only ensures the conductivity and stability of the circuit, but also further reduces heat conduction, and the structural stability and circuit reliability of the system are greatly improved.

[0023] 6. This invention uses silicon material to fabricate the wafer body and eliminates internal stress through special surface circuit fabrication process and annealing treatment, thereby improving the high temperature resistance and structural stability of the wafer. At the same time, it designs alternative solutions such as flexible circuit boards and aluminum wires for different temperature environments, taking into account the system's performance and production cost, and expanding the system's application scenarios.

[0024] 7. The carrier wafer system of the present invention can work stably at 500℃ for 20 minutes and at 400℃ for 30 minutes. The uniform distribution of temperature measuring devices ensures the uniformity and accuracy of temperature acquisition. Wireless signal transmission enables real-time and remote acquisition of temperature data. It successfully solves the problems of inconvenient temperature measurement, influence on gas flow field, poor heat insulation, serious thermal interference between battery and main control circuit, and easy damage to battery by thermal radiation in the prior art. It provides an efficient, accurate and stable temperature measurement solution for the semiconductor processing field and has extremely high industrial application value. Attached Figure Description

[0025] Figure 1 This is a schematic diagram of the structure of the present invention.

[0026] Figure 2 This is a schematic diagram of the structure of the present invention.

[0027] Figure 3 This is a schematic diagram of the support structure of the present invention.

[0028] Figure 4 This is a schematic diagram of the high-temperature heat insulation structure of the present invention.

[0029] Explanation of reference numerals in the attached diagram: 1. Wafer body, 2. Temperature sensing device, 3. Battery, 4. Main control circuit, 5. Box, 6. Support structure, 6-1. Support foot, 6-2. Metal sheet, 7. High-temperature insulation structure, 7-1. Phase change material layer, 7-2. Insulation material layer, 8. Ceramic gasket, 9. Double gold wire. Detailed Implementation

[0030] In the description of this invention, it should be noted that the directional terms such as "center", "lateral", "longitudinal", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", and "counterclockwise" indicate the orientation and positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. They should not be construed as limiting the specific protection scope of this invention.

[0031] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features. Thus, the use of "first" and "second" to define a feature may explicitly or implicitly include one or more of that feature, and in the description of this invention, "at least" means one or more, unless otherwise explicitly specified.

[0032] In this invention, unless otherwise explicitly specified and limited, the terms "assembly," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can also refer to a mechanical connection; they can refer to a direct connection or a connection through an intermediate medium; or they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0033] In this invention, unless otherwise specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "below," and "over" the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Above," "below," and "below" the second feature includes the first feature being directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0034] The specific embodiments of the present invention will be further described below with reference to the accompanying drawings, making the technical solution and beneficial effects of the present invention clearer and more explicit. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, but should not be construed as limiting the present invention.

[0035] like Figures 1-4As shown, this invention is a wafer carrier system with a high-temperature insulation structure, designed to solve the problem of temperature uniformity measurement in semiconductor vacuum heating chambers below 500°C, while improving the accuracy of the measured values. Structurally, it includes a wafer body 1, a temperature measuring device 2, a battery 3, a main control circuit 4, a housing 5, and a support structure 6. The housing 5 has a customized high-temperature insulation structure 7, which is internally divided into an independent battery cavity and a main control circuit cavity. The battery 3 is sealed and installed in the battery cavity, and the main control circuit 4 is sealed and installed in the main control circuit cavity. A copper high thermal conductivity barrier layer is provided between the two cavities to achieve thermal isolation. The battery cavity adopts a double-layer structure of a silica aerogel insulation layer and an aluminum foil reflective heat shield layer. The aerogel insulation layer is attached to and covers the battery 3, and its thermal conductivity is ≤0.02W / (m²). •K), which can achieve efficient blocking of heat conduction; the reflective heat shield layer is a high-reflectivity metal foil layer such as aluminum foil or gold foil, which covers the outside of the aerogel heat insulation layer, with a reflectivity ≥90%, which can directly block the strong heat radiation of the semiconductor chamber, avoid the heat radiation directly irradiating the battery and causing internal material aging, and specifically solve the problem of heat radiation damage to the battery, ensuring the battery's cycle charge and discharge performance in high-temperature environments; the main control circuit cavity is a multi-layer structure with alternating phase change material layer 7-1 and heat insulation material layer 7-2. The phase change material layer 7-1 is made of bismuth alloy with a melting point of 100℃, and the heat insulation material layer 7-2 is made of zirconium oxide ceramic. The box 5 is fixed to the wafer body 1 by the support structure 6. The battery 3 is a solid-state battery. Solid-state batteries can withstand higher temperatures than other batteries. Using other types of batteries will reduce the upper temperature limit of this system. Other semi-solid-state batteries can also be selected in low-temperature environments. If other batteries are used, the battery will expand under vacuum and heated conditions, leading to a decrease in system stability and system failure.

[0036] Temperature sensing device 2 is a platinum resistance thermometer; wafer body 1 substrate: silicon material. Surface circuit fabrication method: metal sintering after trenching - metal screen printing - metal deposition - metal deposition after etching; post-processing: annealing the wafer to eliminate internal stress and improve stability. Alternative solution for low-temperature conditions: at temperatures below 250℃, flexible circuit boards, such as FPC polyimide circuit boards, can be used and bonded to the silicon wafer surface.

[0037] Specifically, circuits can be fabricated on the surface of a silicon wafer using metal deposition methods. First, a thin metal film, such as aluminum or copper, is deposited on the silicon wafer surface. Then, the circuit pattern is defined using photolithography. Next, an etching process is used to remove unwanted metal, forming the desired circuit. Finally, the wafer is placed in an annealing furnace and annealed under appropriate temperature and time conditions to eliminate internal stresses generated during processing. This process improves the wafer's high-temperature resistance, enabling it to operate stably in environments below 500°C; annealing enhances the overall stability of the wafer, reducing deformation and performance drift at high temperatures; and provides an alternative for low-temperature applications, expanding the system's applicability.

[0038] The high-temperature insulation structure 7 adopts a multi-layer insulation structure design, including several layers of phase change material 7-1 and insulation material 7-2.

[0039] Specifically, this involves the design of support points and the application of phase change materials.

[0040] 1. The support structure 6 includes support feet 6-1 and metal sheets 6-2. The support feet 6-1 connect the top of the box 5 to the body of the box 5, and the metal sheets fix the box 5 to the wafer surface. 2. Multilayer phase change structure: Active material layer: using phase change materials (such as bismuth alloy, melting point 80-120℃); Thermal insulation material layer: using ceramic materials (such as zirconia ceramic). 3. Fixing method: below -250℃: organic adhesives can be used; above -250℃, inorganic adhesives are required.

[0041] Specifically, the thermal insulation structure is designed from bottom to top as follows: wafer surface → metal sheet (fixed with inorganic adhesive) → support feet → bottom of the box → ceramic thermal insulation layer (zirconia) → phase change material layer (bismuth alloy) → top of the box. Battery 3 and main control circuit 4 are installed inside box 5, achieving step-by-step thermal insulation through this multi-layer structure.

[0042] Due to the excessively high surface temperature of the wafer, there is a height restriction for this temperature-sensing wafer, which needs to be within 3-5mm. Therefore, a support rod is used to connect it at the top to reduce heat transfer. In order to reduce the absorption efficiency of heat radiation, the surface of the temperature-sensing wafer is coated with a radiation-emitting coating. The purpose of the high-temperature insulation structure 7 is to reduce the temperature transferred to the box 5. Therefore, phase change material is introduced to improve the time delay characteristics of heat transfer, so that the circuit temperature inside the box 5 remains within the normal operating range during the service time.

[0043] This technical solution extends the heat transfer path and increases the hysteresis of heat transfer, effectively protecting internal electronic components; it further enhances the heat insulation effect by utilizing the heat absorption but temperature stability characteristics of phase change materials; the special support and fixing method reduces heat conduction while improving structural stability; and it achieves stable operation at 500℃ for 20 minutes or 400℃ for 30 minutes, greatly expanding the application range of the system.

[0044] Ceramic pads 8 are respectively provided on the high-temperature insulation structure 7 and the wafer body 1. The main control circuit 4 and the battery 3 are connected to the ceramic pads 8 through double gold wires 9, and then connected from the ceramic pads 8 to the ceramic pads 8 on the wafer surface through double gold wires 9. The gold wire connection process uses semiconductor lead technology. The use of ceramic pads 8 can play a certain role in heat insulation. The use of double gold wires is to improve the stability of the circuit. When one gold wire breaks, the other can still continue to work, protecting the system from failure. The ceramic pads 8 inside the high-temperature insulation structure 7 are connected to the circuit to further reduce heat conduction. When the operating temperature is below 350℃, the gold wires can be replaced with aluminum wires to reduce production costs.

[0045] Compared with existing technologies, this invention achieves stable operation in high-temperature environments, such as 500°C for 20 minutes and 400°C for 30 minutes, through innovative structural design and material selection. Compared with traditional wired thermocouple temperature measurement methods, this system can achieve more convenient and accurate temperature measurement without affecting the chamber seal and gas flow field.

[0046] The system's innovations are mainly reflected in the following aspects: 1. Wireless temperature measurement design, avoiding any impact on chamber sealing. 2. Multi-layer thermal insulation structure, effectively delaying heat transfer and protecting core electronic components. 3. Special connection and fixing methods, improving system stability and reliability. 4. Innovative application of materials, such as the use of solid-state batteries and phase change materials, expanding the system's operating temperature range. Through these innovations, this system successfully solves the problems of inconvenient temperature measurement, impact on gas flow field, and long cooling time in existing technologies, providing a more efficient and accurate temperature measurement solution for the semiconductor processing field. 5. The battery is not simply installed in the existing heat insulation structure. Instead, it is customized and innovative in terms of cavity partitioning design, gradient selection of heat insulation materials, and heat conduction blocking structure, taking into account the battery's high temperature resistance threshold, charge and discharge temperature characteristics, and heat radiation protection requirements. The heat insulation structure is divided into an independent battery cavity and a main control circuit cavity. A high thermal conductivity barrier layer is set between the two cavities to achieve thermal isolation and prevent the heat from the main control circuit from affecting the battery's charge and discharge. The battery cavity adopts a double-layer structure of "aerogel heat insulation layer + reflective heat shielding layer" to specifically solve the damage to the battery caused by strong heat radiation from the semiconductor cavity and ensure the battery's cycle charge and discharge performance in high temperature environments.

[0047] The above description is only a preferred embodiment of the present invention. It should be noted that those skilled in the art can make several modifications and improvements without departing from the inventive concept of the present invention, and these all fall within the protection scope of the present invention.

Claims

1. A carrier wafer system with a high-temperature thermal insulation structure, characterized in that, It includes a wafer body, a temperature sensing device, a battery, a main control circuit, a box, and a support structure. The box has a customized high-temperature insulation structure inside, which is divided into an independent battery cavity and a main control circuit cavity. The battery is sealed and installed in the battery cavity, and the main control circuit is sealed and installed in the main control circuit cavity. The box is fixedly connected to the surface of the wafer body through the support structure. The temperature sensing device is arranged on the surface of the wafer body and electrically connected to the main control circuit.

2. The carrier wafer system with a high-temperature thermal insulation structure according to claim 1, characterized in that, A high thermal conductivity barrier layer is provided between the battery independent cavity and the main control circuit cavity. The high thermal conductivity barrier layer is a metal thermally conductive barrier sheet, which realizes thermal isolation between the two cavities and blocks the transfer of the working heat of the main control circuit to the battery independent cavity.

3. The carrier wafer system with a high-temperature thermal insulation structure according to claim 1, characterized in that, The battery independent cavity adopts a double-layer thermal insulation structure of aerogel thermal insulation layer + reflective thermal shielding layer. The aerogel thermal insulation layer is attached to the inner wall of the battery independent cavity, and the reflective thermal shielding layer is wrapped on the outside of the aerogel thermal insulation layer. The reflective thermal shielding layer is a high-reflectivity metal foil layer used to block strong heat radiation from the semiconductor cavity. The main control circuit cavity has a multi-layer composite thermal insulation structure, including several phase change material layers and several thermal insulation material layers, which are alternately stacked.

4. The carrier wafer system with a high-temperature thermal insulation structure according to claim 3, characterized in that, The phase change material layer is made of bismuth alloy with a melting point of 80-120℃; the heat insulation material layer is made of zirconia ceramic material; the aerogel heat insulation layer is a silica aerogel heat insulation layer with a thermal conductivity ≤0.02W / (m·K).

5. The carrier wafer system with a high-temperature thermal insulation structure according to claim 1, characterized in that, The support structure includes support feet and a metal sheet. The bottom of the box is fixedly connected to the upper surface of the metal sheet via the support feet, and the lower surface of the metal sheet is fixedly connected to the surface of the wafer body. The metal sheet and the wafer body are bonded together with adhesive. Organic adhesive is used for working environments below 250°C, and inorganic adhesive is used for working environments above 250°C.

6. The carrier wafer system with a high-temperature thermal insulation structure according to claim 1, characterized in that, Ceramic pads are fixedly installed on the inner wall of the high-temperature insulation structure and the surface of the wafer body. The main control circuit and the battery are electrically connected to the corresponding ceramic pads on the high-temperature insulation structure through double gold wires. The ceramic pads on the high-temperature insulation structure are then electrically connected to the ceramic pads on the wafer body through double gold wires. The connection process of the double gold wires adopts semiconductor wire bonding technology. When the system operating temperature is lower than 350°C, the double gold wires are replaced with double aluminum wires.

7. The carrier wafer system with a high-temperature thermal insulation structure according to claim 1, characterized in that, The wafer body is made of monocrystalline silicon material. The surface circuit fabrication process of the wafer body is as follows: metal sintering after trenching → metal screen printing → metal deposition → metal deposition after etching. After the surface circuit is fabricated, the wafer body is annealed to eliminate internal stress.

8. The carrier wafer system with a high-temperature thermal insulation structure according to claim 7, characterized in that, When the system operating temperature is below 250°C, the surface circuit of the wafer body is replaced with a flexible circuit board, which is an FPC polyimide circuit board, and the flexible circuit board is attached to the surface of the wafer body.

9. The carrier wafer system with a high-temperature thermal insulation structure according to claim 1, characterized in that, The battery is a high-temperature resistant solid-state battery, and the temperature measuring device is a platinum resistance thermometer, which is uniformly distributed on the surface of the wafer body.

10. The carrier wafer system with a high-temperature thermal insulation structure according to any one of claims 1-9, characterized in that, The overall hierarchical structure of the high-temperature insulation structure from bottom to top is as follows: wafer body surface → metal sheet → support foot → box bottom → zirconia ceramic insulation layer → bismuth alloy phase change material layer → box top; the distance between the box and the wafer body is controlled at 3-5mm, and the surface of the wafer body is coated with a radiation emission coating to reduce the heat radiation absorption efficiency; the main control circuit integrates a control module, a wireless signal transmission module and a wireless signal receiving module, and the temperature signal collected by the temperature measuring device is processed by the main control circuit and transmitted to the external terminal through the wireless signal transmission module.

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