Vanadium pentoxide target material and method for producing the same

Abstract

The application provides a vanadium pentoxide target material and a preparation method thereof. The preparation method comprises the following steps: ball-milling vanadium pentoxide powder and a dopant to obtain a mixed powder, and sequentially performing cold isostatic pressing, intermediate heat treatment, hot isostatic pressing and annealing on the mixed powder, and finally obtaining the vanadium pentoxide target material. The preparation method provided by the application realizes the preparation of a high-quality vanadium pentoxide target material through the combination of multiple pressure and heat treatment processes, and simultaneously realizes the improvement of the purity, density and uniformity of the vanadium pentoxide target material. The density of the target material reaches 99%, and the purity reaches 99.99%, which can greatly improve the quality of a vanadium pentoxide film.

Description

Technical Field

[0001] This invention belongs to the field of magnetron sputtering technology, specifically relating to a vanadium pentoxide target and its preparation method. Background Technology

[0002] Vanadium pentoxide (V₂O₅) is an important functional ceramic material with unique redox properties, wide bandgap semiconductor characteristics, and high thermal stability. These properties make it a promising candidate for various thin-film devices, including smart windows, thermistors, all-solid-state thin-film lithium batteries, and electrochromic devices.

[0003] High-performance vanadium pentoxide thin films are primarily prepared using magnetron sputtering. Currently, the preparation method for vanadium oxide thin films mainly involves magnetron sputtering with high-purity metallic vanadium targets in an argon-oxygen mixed atmosphere. However, when using high-purity vanadium targets, fluctuations in vanadium price can cause segregation of the film composition, affecting the uniformity and performance stability of the film. The fundamental reason for choosing this technical route is that existing technologies struggle to produce high-quality, high-performance vanadium pentoxide targets. Vanadium pentoxide has a low melting point and is prone to decomposition at high temperatures, resulting in multiple valence state transitions and insufficient purity. Furthermore, it is brittle and hard. Traditional sintering methods, such as hot pressing, are prone to uneven temperature fields, leading to abnormal grain growth, insufficient density, or thermal stress cracking. This, in turn, causes the target to crack easily during sputtering, resulting in uneven film formation. In addition, carbon impurities are easily introduced through the mold during sintering, leading to a decline in the electrical properties of the thin film.

[0004] Therefore, there is an urgent need to develop a preparation process that can effectively improve the purity and density of vanadium pentoxide targets. Summary of the Invention

[0005] In view of the shortcomings of the existing technology, the purpose of this invention is to provide a vanadium pentoxide target and its preparation method, so as to prepare a high-quality vanadium pentoxide target and improve the quality of vanadium pentoxide sputtered thin film.

[0006] To achieve this objective, the present invention adopts the following technical solution:

[0007] In a first aspect, the present invention provides a method for preparing a vanadium pentoxide target, the method comprising the following steps:

[0008] Vanadium pentoxide powder and a dopant are ball-milled and mixed to obtain a mixed powder. The mixed powder is then subjected to cold isostatic pressing, intermediate heat treatment, hot isostatic pressing, and annealing in sequence to finally obtain the vanadium pentoxide target material.

[0009] Vanadium pentoxide (VPO) exhibits significant instability at high temperatures, readily undergoing thermal decomposition or multivalent state transitions. This leads to a persistent challenge in balancing density and purity during its preparation process. Furthermore, VPO is extremely sensitive to temperature and pressure conditions, easily resulting in excessive grain growth or crack formation, making it difficult to obtain a uniform and dense microstructure. The preparation method provided by this invention achieves densification of VPO through a combination of multiple pressure and heat treatment processes, producing high-quality VPO targets. It also solves the carbon impurity problem inherent in traditional hot-pressing sintering methods, simultaneously improving the purity, density, and uniformity of the VPO targets.

[0010] Preferably, the purity of the vanadium pentoxide powder is ≥99.995%, for example, it can be 99.995%, 99.996%, 99.997%, 99.998%, 99.999%, or 99.9999%, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0011] Preferably, the D50 particle size of the vanadium pentoxide powder is 20-45 μm, for example, it can be 20 μm, 25 μm, 30 μm, 35 μm, 40 μm or 45 μm, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0012] Preferably, the dopant includes zinc oxide and / or tantalum pentoxide.

[0013] Preferably, the amount of the dopant is 0.5-1.0 wt% of vanadium pentoxide powder, for example, it can be 0.5 wt%, 0.6 wt%, 0.7 wt%, 0.8 wt%, 0.9 wt% or 1.0 wt%, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0014] Preferably, the ball milling medium comprises anhydrous ethanol.

[0015] Preferably, the pressure of the cold isostatic pressing is 180-250 MPa, for example, it can be 180 MPa, 190 MPa, 200 MPa, 210 MPa, 220 MPa, 230 MPa, 240 MPa or 250 MPa, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0016] Preferably, the cold isostatic pressing time is 15-20 minutes, for example, it can be 15 minutes, 16 minutes, 17 minutes, 18 minutes, 19 minutes or 20 minutes, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0017] Preferably, the cold isostatic pressing is performed in a rubber mold.

[0018] Preferably, the density of the blank obtained after cold isostatic pressing is ≥65%, for example, it can be 65%, 66%, 67%, 68%, 69%, 70%, 72%, 75%, 78%, 80% or 85%, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0019] Preferably, the intermediate heat treatment includes vacuum heat treatment and oxidation heat treatment in sequence.

[0020] Preferably, the heating rate of the vacuum heat treatment is 1-5℃ / min, for example, it can be 1℃ / min, 2℃ / min, 3℃ / min, 4℃ / min or 5℃ / min, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0021] Preferably, the temperature of the vacuum heat treatment is 250-450℃, for example, it can be 250℃, 280℃, 300℃, 320℃, 350℃, 380℃, 400℃, 420℃ or 450℃, but is not limited to the listed values, and other unlisted values ​​within the range are also applicable.

[0022] Preferably, the holding time for the vacuum heat treatment is 2-4 hours, for example, 2 hours, 2.5 hours, 3 hours, 3.5 hours or 4 hours, but not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0023] Preferably, the oxidative heat treatment is carried out in a high-purity oxygen atmosphere, wherein the purity of the oxygen is ≥99.999%.

[0024] Preferably, the heating rate of the oxidation heat treatment is 1-5℃ / min, for example, it can be 1℃ / min, 2℃ / min, 3℃ / min, 4℃ / min or 5℃ / min, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0025] Preferably, the temperature of the oxidation heat treatment is 250-300℃, for example, it can be 250℃, 255℃, 260℃, 265℃, 270℃, 275℃, 280℃, 285℃, 290℃, 295℃ or 300℃, but is not limited to the listed values, and other unlisted values ​​within the range are also applicable.

[0026] Preferably, the holding time for the oxidation heat treatment is 1-3 hours, for example, it can be 1 hour, 1.5 hours, 2 hours, 2.5 hours or 3 hours, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0027] Preferably, the temperature of the hot isostatic pressing is 400-570℃, for example, it can be 400℃, 420℃, 440℃, 450℃, 460℃, 480℃, 500℃, 520℃, 540℃, 550℃ or 570℃, but is not limited to the listed values, and other unlisted values ​​within the range are also applicable.

[0028] Preferably, the pressure of the hot isostatic pressing is 150-250 MPa, for example, it can be 150 MPa, 160 MPa, 170 MPa, 180 MPa, 190 MPa, 200 MPa, 210 MPa, 220 MPa, 230 MPa, 240 MPa or 250 MPa, but is not limited to the listed values, and other unlisted values ​​within the range are also applicable.

[0029] Preferably, the heat preservation and pressure holding time of the hot isostatic pressing is 3-5 hours, for example, it can be 3 hours, 3.5 hours, 4 hours, 4.5 hours or 5 hours, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0030] Preferably, after the hot isostatic pressing is completed, cooling is performed at a cooling rate of 2-5℃ / min.

[0031] The cooling rate can be 2℃ / min, 2.5℃ / min, 3℃ / min, 3.5℃ / min, 4℃ / min, 4.5℃ / min or 5℃ / min, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0032] Preferably, the annealing is performed in an inert gas atmosphere.

[0033] Preferably, the annealing heating rate is 1-3℃ / min, for example, it can be 1℃ / min, 1.5℃ / min, 2℃ / min, 2.5℃ / min or 3℃ / min, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0034] Preferably, the annealing temperature is 200-300℃, for example, it can be 200℃, 210℃, 220℃, 230℃, 240℃, 250℃, 260℃, 270℃, 280℃, 290℃ or 300℃, but is not limited to the listed values, and other unlisted values ​​within the range are also applicable.

[0035] Preferably, the annealing holding time is 1-2 hours, for example, it can be 1 hour, 1.2 hours, 1.5 hours, 1.8 hours or 2 hours, but is not limited to the listed values. Other unlisted values ​​within the range are also applicable.

[0036] As a preferred embodiment of the preparation method provided by the present invention, the preparation method includes the following steps:

[0037] (1) High-purity vanadium pentoxide powder and dopant are ball-milled and mixed, wherein the purity of the vanadium pentoxide powder is ≥99.995%, the D50 particle size of the vanadium pentoxide powder is 20-45μm, the dopant includes zinc oxide and / or tantalum pentoxide, the amount of the dopant is 0.5-1.0wt% of the vanadium pentoxide powder, the ball milling medium includes anhydrous ethanol, and a mixed powder is obtained after ball milling;

[0038] (2) The mixed powder is loaded into a rubber mold and subjected to cold isostatic pressing. The pressure of the cold isostatic pressing is 180-250 MPa, and the time of the cold isostatic pressing is 15-20 min. After the cold isostatic pressing is completed, a preform is obtained, and the density of the preform is ≥65%.

[0039] (3) The preform is subjected to vacuum heat treatment, wherein the heating rate of the vacuum heat treatment is 1-5℃ / min, the temperature of the vacuum heat treatment is 250-450℃, and the holding time of the vacuum heat treatment is 2-4h, to obtain a vacuum heat-treated preform.

[0040] (4) The vacuum heat-treated blank is subjected to oxidation heat treatment in a high-purity oxygen atmosphere, wherein the purity of the oxygen is ≥99.999%, the heating rate of the oxidation heat treatment is 1-5℃ / min, the temperature of the oxidation heat treatment is 250-300℃, and the holding time of the oxidation heat treatment is 1-3h, to obtain the oxidation heat-treated blank.

[0041] (5) Place the oxidation heat-treated billet in a mild steel liner and evacuate to 10°C. -5 Below Pa, hot isostatic pressing is performed. The temperature of hot isostatic pressing is 400-570℃, the pressure of hot isostatic pressing is 150-250MPa, and the holding time of hot isostatic pressing is 3-5h. After the hot isostatic pressing is completed, it is cooled at a cooling rate of 2-5℃ / min to obtain a hot-pressed billet.

[0042] (6) The hot-pressed blank is annealed at a heating rate of 1-3℃ / min, at a temperature of 200-300℃, and at a holding time of 1-2h. After annealing, it is cooled to obtain the vanadium pentoxide target.

[0043] In a second aspect, the present invention provides a vanadium pentoxide target material, wherein the vanadium pentoxide target material is prepared by the preparation method described in the first aspect.

[0044] The vanadium pentoxide target material prepared by this invention is of high quality, and has high density, high purity and grain uniformity, with a density of 99.0% and a purity of 99.99%.

[0045] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0046] The preparation method provided by this invention achieves the preparation of high-quality vanadium pentoxide target material through a combination of multiple pressure and heat treatment processes. At the same time, it improves the purity, density and uniformity of the vanadium pentoxide target material, with the target material density reaching 99.0% and the purity reaching 99.99%, which can greatly improve the sputtering quality of vanadium pentoxide thin film. Detailed Implementation

[0047] The technical solution of the present invention will be further illustrated below through specific embodiments.

[0048] Example 1

[0049] This embodiment provides a method for preparing vanadium pentoxide target material, the preparation method comprising the following steps:

[0050] (1) Vanadium pentoxide powder with a purity of 99.995% and a D50 particle size of 30 μm was ball-milled with zinc oxide dopant in anhydrous ethanol solvent, wherein the dopant was 0.8 wt% of vanadium pentoxide powder. After ball milling, a mixed powder was obtained.

[0051] (2) The obtained mixed powder is loaded into a flexible rubber mold and subjected to cold isostatic pressing at 220MPa for 18 minutes. After the pressing, a preform is obtained.

[0052] (3) The obtained preform is placed in a vacuum furnace and subjected to vacuum heat treatment. The temperature is raised to 400°C at a heating rate of 2°C / min and held for 3 hours to obtain a vacuum heat-treated preform.

[0053] (4) The obtained vacuum heat-treated blank is introduced into high-purity oxygen (purity 99.999%) for oxidation heat treatment. The temperature is raised to 280℃ at a rate of 5℃ / min and held for 2h to obtain the oxidation heat-treated blank.

[0054] (5) Place the obtained anodized heat-treated billet in a mild steel liner and evacuate it to 10°C. -5 The plate is sealed and subjected to hot isostatic pressing at 500℃ and 200MPa for 4 hours. After the hot isostatic pressing is completed, the plate is cooled to room temperature at a cooling rate of 3℃ / min to obtain the hot-pressed blank.

[0055] (6) The obtained hot-pressed blank is placed in an argon atmosphere and heated to 250°C at a heating rate of 2°C / min. It is held at the temperature for 1.5 hours and then cooled to room temperature to finally obtain vanadium pentoxide target material.

[0056] Example 2

[0057] This embodiment provides a method for preparing vanadium pentoxide target material, the preparation method comprising the following steps:

[0058] (1) Vanadium pentoxide powder with a purity of 99.995% and a D50 particle size of 45μm was ball-milled with zinc oxide dopant in anhydrous ethanol solvent, wherein the dopant was 0.5wt% of vanadium pentoxide powder. After ball milling, a mixed powder was obtained.

[0059] (2) The obtained mixed powder is loaded into a flexible rubber mold and subjected to cold isostatic pressing at 250MPa for 15min. After the pressing, a preform is obtained.

[0060] (3) The obtained preform is placed in a vacuum furnace and subjected to vacuum heat treatment. The temperature is raised to 250°C at a heating rate of 1.5°C / min and held for 4 hours to obtain a vacuum heat-treated preform.

[0061] (4) The obtained vacuum heat-treated blank is introduced into high-purity oxygen (purity 99.999%) for oxidation heat treatment. The temperature is raised to 250°C at a rate of 1°C / min and held for 3 hours to obtain the oxidation heat-treated blank.

[0062] (5) Place the obtained anodized heat-treated billet in a mild steel liner and evacuate it to 10°C. -5 The plate is sealed and subjected to hot isostatic pressing at 400℃ and 150MPa for 5 hours. After the hot isostatic pressing is completed, the plate is cooled to room temperature at a cooling rate of 2℃ / min to obtain the hot-pressed blank.

[0063] (6) The obtained hot-pressed blank is placed in an argon atmosphere and heated to 200°C at a heating rate of 1°C / min. It is kept at this temperature for 2 hours and then cooled to room temperature to finally obtain vanadium pentoxide target material.

[0064] Example 3

[0065] This embodiment provides a method for preparing vanadium pentoxide target material, the preparation method comprising the following steps:

[0066] (1) Vanadium pentoxide powder with a purity of 99.995% and a D50 particle size of 20 μm was ball-milled with zinc oxide dopant in anhydrous ethanol solvent, wherein the dopant was 1.0 wt% of vanadium pentoxide powder. After ball milling, a mixed powder was obtained.

[0067] (2) The obtained mixed powder is loaded into a flexible rubber mold and subjected to cold isostatic pressing at 180MPa for 20 minutes. After the pressing, a preform is obtained.

[0068] (3) The obtained preform is placed in a vacuum furnace and subjected to vacuum heat treatment. The temperature is raised to 450°C at a heating rate of 5°C / min and held for 2 hours to obtain a vacuum heat-treated preform.

[0069] (4) The obtained vacuum heat-treated blank is introduced into high-purity oxygen (purity 99.999%) for oxidation heat treatment. The temperature is raised to 300℃ at a rate of 5℃ / min and held for 1h to obtain the oxidation heat-treated blank.

[0070] (5) Place the obtained anodized heat-treated billet in a mild steel liner and evacuate it to 10°C. -5 The plate is sealed and subjected to hot isostatic pressing at 570℃ and 250MPa for 3 hours. After the hot isostatic pressing is completed, the plate is cooled to room temperature at a cooling rate of 5℃ / min to obtain the hot-pressed blank.

[0071] (6) The obtained hot-pressed blank is placed in an argon atmosphere and heated to 300°C at a heating rate of 3°C / min. It is kept at this temperature for 1 hour and then cooled to room temperature to finally obtain vanadium pentoxide target material.

[0072] Example 4

[0073] This embodiment provides a method for preparing vanadium pentoxide target material. Compared with Example 1, the pressure of cold isostatic pressing in step (2) is controlled to 150 MPa, and the rest is the same as in Example 1.

[0074] Example 5

[0075] This embodiment provides a method for preparing vanadium pentoxide target material. Compared with Example 1, the pressure of cold isostatic pressing in step (2) is controlled to 280 MPa, and the rest is the same as in Example 1.

[0076] Example 6

[0077] This embodiment provides a method for preparing vanadium pentoxide target material. Compared with Example 1, the temperature of hot isostatic pressing in step (5) is controlled at 350°C, and the rest is the same as in Example 1.

[0078] Example 7

[0079] This embodiment provides a method for preparing vanadium pentoxide target material. Compared with Example 1, the temperature of hot isostatic pressing in step (5) is controlled at 600°C, and the rest is the same as in Example 1.

[0080] Example 8

[0081] This embodiment provides a method for preparing vanadium pentoxide target material. Compared with Example 1, the vacuum heat treatment in step (3) is not performed, and the rest is the same as in Example 1.

[0082] Example 9

[0083] This embodiment provides a method for preparing vanadium pentoxide target material. Compared with Example 1, step (4) of oxidation heat treatment is not performed, and the rest is the same as Example 1.

[0084] Comparative Example 1

[0085] This comparative example provides a method for preparing vanadium pentoxide target material. Compared with Example 1, no dopant is added in step (1), and the rest is the same as in Example 1.

[0086] Comparative Example 2

[0087] This comparative example provides a method for preparing vanadium pentoxide target material. Compared with Example 1, steps (2) to (4) are omitted, that is, the mixed powder is only subjected to hot isostatic pressing and annealing, and the rest is the same as in Example 1.

[0088] The performance of the vanadium pentoxide targets provided in the examples and comparative examples was tested, and the results are shown in Table 1.

[0089] Table 1

[0090]

[0091] As shown in Table 1, the vanadium pentoxide target material prepared using the method provided by this invention exhibits high purity, high density, and fine grains, which can significantly improve the quality of thin film sputtering. The preparation method of this invention, through a combination of multiple pressure and heat treatment processes, can prepare high-quality vanadium pentoxide targets with a density exceeding 96%, particularly reaching over 98%. In contrast, in the comparative example, the lack of dopants in the raw materials or the absence of isostatic pressing and heat treatment processes can affect the powder densification process, leading to a significant deterioration in the target density.

[0092] Furthermore, compared to other embodiments, the target density and grain size of Embodiments 1-3 are superior. Compared to the results of Embodiment 1, in Embodiments 4 and 6, when the isostatic pressing pressure or temperature is insufficient, the powder is difficult to complete an effective densification process, resulting in a decrease in target density; while in Embodiments 5 and 7, when the isostatic pressing pressure or temperature is too high, the target density not only cannot be further improved, but the grains grow further; in Embodiments 8 and 9, the lack of one of the key heat treatment processes also causes a decrease in target density.

[0093] In summary, the preparation method provided by this invention, through the combination of multiple pressure and heat treatment processes, achieves the preparation of high-quality vanadium pentoxide target materials, while simultaneously improving the purity, density, and uniformity of the vanadium pentoxide target materials. The target material density reaches 99.0%, and the purity reaches 99.99%, which can greatly improve the sputtering quality of vanadium pentoxide thin films.

[0094] The specific embodiments described above further illustrate the purpose, technical solution, and beneficial effects of the present invention. It should be understood that the above descriptions are merely specific embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A method for preparing a vanadium pentoxide target, characterized in that, The preparation method includes the following steps: Vanadium pentoxide powder and a dopant are ball-milled and mixed to obtain a mixed powder. The mixed powder is then subjected to cold isostatic pressing, intermediate heat treatment, hot isostatic pressing and annealing in sequence to finally obtain a vanadium pentoxide target material.

2. The preparation method according to claim 1, characterized in that, The purity of the vanadium pentoxide powder is ≥99.995%; Preferably, the vanadium pentoxide powder has a D50 particle size of 20-45 μm.

3. The preparation method according to claim 1 or 2, characterized in that, The dopant includes zinc oxide and / or tantalum pentoxide; Preferably, the amount of the dopant is 0.5-1.0 wt% of the vanadium pentoxide powder; Preferably, the ball milling medium comprises anhydrous ethanol.

4. The preparation method according to any one of claims 1-3, characterized in that, The pressure of the cold isostatic pressing is 180-250 MPa; Preferably, the cold isostatic pressing time is 15-20 minutes; Preferably, the cold isostatic pressing is performed in a rubber mold; Preferably, the density of the blank obtained after cold isostatic pressing is ≥65%.

5. The preparation method according to any one of claims 1-4, characterized in that, The intermediate heat treatment includes vacuum heat treatment and oxidation heat treatment in sequence.

6. The preparation method according to claim 5, characterized in that, The heating rate of the vacuum heat treatment is 1-5℃ / min; Preferably, the temperature of the vacuum heat treatment is 250-450℃; Preferably, the holding time for the vacuum heat treatment is 2-4 hours; Preferably, the oxidative heat treatment is carried out in a high-purity oxygen atmosphere, wherein the purity of the oxygen is ≥99.999%; Preferably, the heating rate of the oxidation heat treatment is 1-5℃ / min; Preferably, the temperature of the oxidation heat treatment is 250-300℃; Preferably, the holding time for the oxidation heat treatment is 1-3 hours.

7. The preparation method according to any one of claims 1-6, characterized in that, The temperature of the hot isostatic pressing is 400-570℃; Preferably, the pressure of the hot isostatic pressing is 150-250 MPa; Preferably, the heat preservation and pressure holding time for hot isostatic pressing is 3-5 hours; Preferably, after the hot isostatic pressing is completed, cooling is performed at a cooling rate of 2-5℃ / min.

8. The preparation method according to any one of claims 1-7, characterized in that, The annealing is performed in an inert gas atmosphere; Preferably, the annealing heating rate is 1-3℃ / min; Preferably, the annealing temperature is 200-300℃; Preferably, the annealing holding time is 1-2 hours.

9. The preparation method according to any one of claims 1-8, characterized in that, The preparation method includes the following steps: (1) High-purity vanadium pentoxide powder and dopant are ball-milled and mixed, wherein the purity of the vanadium pentoxide powder is ≥99.995%, the D50 particle size of the vanadium pentoxide powder is 20-45μm, the dopant includes zinc oxide and / or tantalum pentoxide, the amount of the dopant is 0.5-1.0wt% of the vanadium pentoxide powder, the ball milling medium includes anhydrous ethanol, and a mixed powder is obtained after ball milling; (2) The mixed powder is loaded into a rubber mold and subjected to cold isostatic pressing. The pressure of the cold isostatic pressing is 180-250 MPa, and the time of the cold isostatic pressing is 15-20 min. After the cold isostatic pressing is completed, a preform is obtained, and the density of the preform is ≥65%. (3) The preform is subjected to vacuum heat treatment, wherein the heating rate of the vacuum heat treatment is 1-5℃ / min, the temperature of the vacuum heat treatment is 250-450℃, and the holding time of the vacuum heat treatment is 2-4h, to obtain a vacuum heat-treated preform. (4) The vacuum heat-treated blank is subjected to oxidation heat treatment in a high-purity oxygen atmosphere, wherein the purity of the oxygen is ≥99.999%, the heating rate of the oxidation heat treatment is 1-5℃ / min, the temperature of the oxidation heat treatment is 250-300℃, and the holding time of the oxidation heat treatment is 1-3h, to obtain the oxidation heat-treated blank. (5) Place the oxidation heat-treated billet in a mild steel liner and evacuate to 10°C. -5 Below Pa, hot isostatic pressing is performed. The temperature of hot isostatic pressing is 400-570℃, the pressure of hot isostatic pressing is 150-250MPa, and the holding time of hot isostatic pressing is 3-5h. After the hot isostatic pressing is completed, it is cooled at a cooling rate of 2-5℃ / min to obtain a hot-pressed billet. (6) The hot-pressed blank is annealed in an inert gas atmosphere. The annealing rate is 1-3℃ / min, the annealing temperature is 200-300℃, the annealing holding time is 1-2h, and the blank is cooled after annealing to obtain the vanadium pentoxide target.

10. A vanadium pentoxide target material, characterized in that, The vanadium pentoxide target is prepared by the preparation method according to any one of claims 1-9.

Images