Convenient-to-control isolation driving circuit system based on metal oxide semiconductor field effect transistor (MOSFET)
By using a combination of discrete transformers and optocouplers to create an isolated drive circuit, the insulation and compatibility issues of the MOSFET isolation drive circuit in high-voltage, high-power power supplies are solved, achieving the effects of small transformer size, low insulation requirements, and wide applicability.
Patent Information
- Application Number
- CN202610656936.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-05-13
- Publication Date
- 2026-06-26
AI Technical Summary
In existing high-voltage, high-power power supplies, the isolation drive circuit of MOSFET has problems such as large transformer size, difficult winding, high insulation requirements, and difficulty in matching the drive transformer.
By employing an input voltage regulator circuit, a transformer drive circuit, a transformer secondary rectifier and filter circuit, and a drive output and negative voltage bootstrap circuit, and combining discrete transformers and optocouplers, isolated driving of MOSFETs is achieved, reducing insulation requirements and adapting to different MOSFET parameters.
It effectively reduces the insulation requirements of transformers, simplifies winding design, has a wide range of applications, strong adaptability, and is suitable for various MOSFET models.