A MOCVD preparation method for infinitely layered nickel-based high-temperature superconducting thin films
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHENCHUANG SUPERCONDUCTOR (SHENZHEN) TECH CO LTD
- Filing Date
- 2026-04-02
- Publication Date
- 2026-06-30
AI Technical Summary
Existing technologies are difficult to prepare infinite-layer nickel-based high-temperature superconducting thin films efficiently and at low cost. Furthermore, the narrow film-forming window, slow growth rate, and low yield limit their application in superconducting wires and tapes and in the field of electronics.
Perovskite nickel oxide films were grown on single-crystal substrates using MOCVD technology, followed by CaH2 reduction treatment to prepare infinite-layer nickel-based high-temperature superconducting films. The specific steps included deposition and reduction annealing.
It has achieved large-area, rapid growth of infinite-layer nickel-based high-temperature superconducting thin films, reducing preparation costs and improving yield. The films exhibit zero resistance characteristics below 40 K, making them suitable for applications such as strong-field magnet coils, high-frequency low-loss cables, superconducting computers, and superconducting microwave devices.
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