Etching solution composition for silver-containing thin film and etching method using the same

Abstract

The present invention relates to an etching liquid composition for silver-containing thin film, which comprises (A) nitric acid, (B) organic acid, (C) metal or metal salt, (D) sulfate, (E) chloride ion, and (F) water, the content of the (E) chloride ion being 0.01 to 5 ppm relative to the total weight of the etching liquid composition for silver-containing thin film, and an etching method using the same, which is excellent in preventing wiring loss and suppressing the precipitation of silver chloride and residue.

Description

Technical Field

[0001] This invention relates to an etching solution composition containing a silver thin film and an etching method using the same. Background Technology

[0002] Organic light-emitting diodes (OLEDs) consist of two opposing electrodes and a thin film of inorganic material with multilayered semiconductor properties existing between them. Organic light-emitting devices with this structure utilize the phenomenon of converting electrical energy into light energy using organic materials, known as organic light emission. Specifically, OLEDs are self-emissive display devices that utilize the recombination of electrons and holes injected into an organic (monomer / low-molecular-weight or high-molecular-weight) thin film through the anode and cathode to form excitons, and the energy from the formed excitons to produce light of a specific wavelength. Recently, OLEDs have been primarily used in flat panel displays as self-emissive devices, eliminating the need for backlighting in liquid crystal displays (LCDs), which are non-emissive devices, thus enabling lightweight and thinner designs. Compared to LCDs, OLEDs offer superior viewing angles and contrast ratios, lower power consumption, the ability to operate at low DC voltages, fast response times, and strong resistance to external shocks due to their solid internal components, as well as a wide operating temperature range.

[0003] On the other hand, as the display area of ​​organic light-emitting displays (OLEDs) gradually increases, the gate lines and data lines connected to the thin-film transistors (TFTs) also become longer, and correspondingly, the resistance of the wiring increases. For this reason, continuing to use chromium (Cr), molybdenum (Mo), aluminum (Al), and their alloys, which have been the main materials used in the past, for gate and data wiring in TFTs becomes difficult to achieve in terms of scale and resolution of flat panel displays. Therefore, to solve problems such as signal delay caused by this increased resistance, it is necessary to use materials with the lowest possible resistivity to form the gate lines and data lines. To this end, efforts are ongoing to apply silver (Ag: resistivity approximately 1.59 μΩ cm) films, silver alloy films, or multilayer films containing silver films or silver alloy films, which have lower resistivity and higher brightness than the metals used in flat panel displays, to the electrodes of color filters, OLED wiring, and reflectors, in order to achieve larger scale, higher resolution, and lower power consumption in flat panel displays. As part of this effort, phosphoric acid-based etching solutions suitable for these materials have been developed.

[0004] Furthermore, various nitric acid-based etching solution compositions are currently being developed that can address the problems associated with phosphoric acid-based etching solution compositions while improving etching efficiency and preventing silver re-adsorption and residue formation. For example, Korean Patent No. 10-2707397 discloses a silver thin film etching solution composition that does not contain chlorine compounds. However, such compositions generally fail to adequately protect the wiring during etching, leading to wiring loss. Therefore, there is a current need for an etching solution composition that can solve this problem.

[0005] Existing technical documents

[0006] Patent documents

[0007] Patent Document 1: Korean Patent No. 10-2707397 Summary of the Invention

[0008] The problem to be solved

[0009] The present invention aims to solve the problems of the prior art mentioned above, and its purpose is to provide an etching solution composition containing a silver thin film that protects the wiring so as to prevent wiring loss.

[0010] Furthermore, the present invention aims to provide an etching solution composition containing a silver thin film, which contains a specific amount of chloride ions, thereby preventing the formation of silver residue and enabling smooth control of silver chloride precipitation.

[0011] The purpose of this invention is to provide an etching solution composition containing a silver thin film, which can not only etch a single-layer film made of silver or a silver alloy, but also simultaneously etch a multilayer film made of the single-layer film and a transparent conductive film, and will not produce residue regardless of the shape of the etched pattern.

[0012] Furthermore, the present invention aims to provide an etching method utilizing the etchant composition containing the silver film.

[0013] Technical solution

[0014] To achieve the above objectives, the present invention provides an etching solution composition for a silver-containing thin film, comprising (A) nitric acid, (B) an organic acid, (C) a metal or metal salt, (D) a sulfate, (E) chloride ions, and (F) water.

[0015] The content of (E) chloride ions is 0.01 to 5 ppm relative to the total weight of the etching solution composition containing the silver film.

[0016] The present invention provides an etching method using the etching solution composition containing the silver film.

[0017] Invention Effects

[0018] The etching solution composition for silver-containing thin films of the present invention protects the wiring by containing a specific amount of chloride ions. Furthermore, by controlling AgCl precipitates, clogging of the filter within the etching equipment is prevented, thus maintaining the etching solution flow rate. Therefore, according to the present invention, wiring loss and yield reduction due to shortened filter replacement cycles are avoided, while simultaneously enabling the etching of single-layer films made of silver or silver alloys, or the simultaneous etching of multilayer films composed of said single-layer films and transparent conductive films.

[0019] Furthermore, the etching solution composition of the silver-containing thin film of the present invention has the effect of suppressing silver residue. Detailed Implementation

[0020] The embodiments of the present invention will now be described in detail.

[0021] This invention relates to an etching solution composition containing a silver thin film, which protects the wiring and inhibits the precipitation of silver chloride by passing a specific amount of chloride ions during and / or after etching. The wiring is not lost during etching, no silver residue is generated, and the yield does not decrease due to shortened filter replacement cycle.

[0022] <Etching solution composition containing silver film>

[0023] The etching solution composition for the silver-containing thin film of the present invention is characterized in that it comprises (A) nitric acid, (B) an organic acid, (C) a metal or metal salt, (D) a sulfate, (E) chloride ions and (F) water, wherein the chloride ions (Cl...) are present in a proportion relative to the total weight of the composition of the silver-containing thin film. - The content of ) is 0.01 to 5 ppm.

[0024] If the (E) chloride ion (Cl) - When the concentration of chlorine (AgCl) exceeds 5 ppm, excessive amounts of it will produce a large amount of silver chloride (AgCl) precipitates, leading to the following problems: clogging of the filter, which removes impurities from the etching equipment, reduces the etching solution flow rate and causes wiring loss; and decreased yield is caused by shortened filter replacement cycles. Furthermore, residue may be generated, causing defects in subsequent processes, and this phenomenon may ultimately also lead to a decrease in yield.

[0025] On the other hand, when the chloride ion content is less than 0.01 ppm, although a large amount of silver chloride (AgCl) precipitates will not be produced, due to inadequate protection of the wiring during the etching process, the wiring may be lost due to the etching solution as described below.

[0026] Specifically, in the case of conventional etching solution compositions containing silver thin films, due to silver ions (Ag... + ) and chloride ions (Cl - The reaction produces insoluble solid form of silver chloride (AgCl) that is insoluble in water and precipitates out. Therefore, in order to prevent this phenomenon from occurring, chlorine compounds containing chlorides or chloride ions are not included in this field.

[0027] In this case, the inventors confirmed through experiments that when there is not a large amount of chloride ions (Cl... - Instead of causing silver chloride (AgCl) precipitation and residue formation, a specific amount of chloride ions is included in the silver film etching solution, and wiring loss does not occur compared to conventional silver film etching solutions that do not contain chloride ions.

[0028] This is because the etching solution composition contains a small amount of chloride ions (Cl... - During the etching process, a protective layer is formed at the interface between the photoresist (PR) and the wiring through interaction with silver ions, thereby preventing the etchant from penetrating between the weakly adhesive photoresist and the wiring to prevent wiring loss.

[0029] In summary, this invention contains a specific amount of chloride ions, thus almost preventing the precipitation of silver chloride while protecting the wiring to prevent wiring loss, thereby also achieving the effect of preventing residue generation, and at the same time exhibiting the basically required silver film etching performance.

[0030] On the other hand, for conventional non-phosphoric acid-based silver-containing metal film etching solutions, in order to evaluate the degree of over-etching in the etching process, the following evaluation is sometimes performed: the substrate is cut, and the width of the metal etched into the inside is observed by scanning electron microscopy (SEM) to see if it is within the required numerical range. However, the existing evaluation method using SEM can only measure up to 10 wires. When etching thousands to tens of thousands of wires on a substrate, it is impossible to evaluate the wire loss from the perspective of the entire film formed on the substrate. Therefore, conventional etching solution compositions have not yet solved the problem of wire loss that occurs on the entire film on the substrate.

[0031] Specifically, in the past, the effect related to preventing over-etching was achieved by adjusting the content of the etchant components to make the redox reaction in the etching process appropriate.

[0032] In contrast, the wiring loss effect described in this invention refers to the effect of chloride ions (Cl) as described above. - A protective layer is formed on the interface between the photoresist and the wiring to reduce the amount of wiring lost from the film as a whole.

[0033] The etching composition of the silver-containing thin film of the present invention can be used for single-layer films made of silver (Ag) or silver alloys and multilayer films made of said single-layer films and indium oxide films. It is preferably used for multilayer films formed of indium oxide film / silver or indium oxide film / silver / indium oxide film, and as an etching composition of essentially non-phosphoric acid silver-containing thin films, it will not damage the underlying film.

[0034] The etching solution composition of the silver-containing thin film of the present invention can simultaneously etch the single-layer film and the multilayer film.

[0035] The etching solution composition of the silver-containing thin film of the present invention can be used for wet etching to exhibit etching uniformity.

[0036] The silver alloy may include: alloys with silver as the main component and containing other metals such as Nd, Cu, Pd, Nb, Ni, Mo, Ni, Cr, Mg, W, Pa, In, Zn, Sn, Al and Ti; as well as silver nitrides, silicides, carbides, oxides, etc., but are not limited thereto.

[0037] The transparent conductive film may contain one or more of the following: indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), and indium gallium zinc oxide (IGZO).

[0038] The multilayer film may include a structure formed by a transparent conductive film / silver, a transparent conductive film / silver alloy, a transparent conductive film / silver / transparent conductive film, or a transparent conductive film / silver alloy / transparent conductive film.

[0039] (A)Nitric acid

[0040] The nitric acid contained in the etching solution composition of the silver-containing thin film of the present invention acts as an oxidant and can be used to oxidize a single-layer film made of silver (Ag) or a silver alloy, as well as a multilayer film made of the single-layer film and a transparent conductive film. In one embodiment, the content of the nitric acid relative to the total weight of the composition can be 7 to 15% by weight, preferably 8 to 10% by weight. When the content of the nitric acid (A) in the composition is within the above-mentioned range, the etching rate is easily controlled, thereby enabling uniform etching of the silver-containing thin film and the transparent conductive film.

[0041] (B) Organic acids

[0042] The organic acid contained in the etching solution composition of the silver-containing thin film of the present invention serves as an etchant for the silver-containing thin film and can be used to etch the silver-containing thin film oxidized by the nitric acid.

[0043] The organic acid may include organic acids other than (B-1) alkyl sulfonic acids and (B-2) alkyl sulfonic acids.

[0044] (B-1) Alkyl sulfonic acid

[0045] The alkyl sulfonic acid contained in the etching solution composition of the silver-containing thin film of the present invention can be used to etch the aforementioned silver-containing thin film and transparent conductive film oxidized by nitric acid. In the present invention, the number of carbon atoms in the alkyl sulfonic acid is preferably 1 to 3. For example, it can be one or more selected from the group consisting of methanesulfonic acid, ethanesulfonic acid, and propanesulfonic acid, preferably methanesulfonic acid. The content of the alkyl sulfonic acid relative to the total weight of the composition is 3 to 8% by weight, preferably 4 to 5% by weight. When the content of the alkyl sulfonic acid is within the above-mentioned range, it is easy to control the etching rate of the silver-containing thin film and the etching rate of the transparent conductive film, thereby preventing over-etching and preventing defects caused by silver residue and silver re-adsorption.

[0046] (B-2) Organic acids other than alkyl sulfonic acids

[0047] The organic acid other than the alkyl sulfonic acid included in the etching solution composition of the silver-containing thin film of the present invention can be used as an etchant for the silver-containing thin film oxidized by the nitric acid. The organic acid other than the alkyl sulfonic acid may include, for example, one or more selected from the group consisting of acetic acid, citric acid, glycolic acid, malonic acid, lactic acid, tartaric acid, butyric acid, formic acid, gluconic acid, oxalic acid, valeric acid, sulfobenzoic acid, sulfosuccinic acid, sulfophthalic acid, salicylic acid, sulfosalicylic acid, benzoic acid, glyceric acid, succinic acid, malic acid, isocitric acid, acrylic acid, iminodiacetic acid, and ethylenediaminetetraacetic acid. Preferably, the organic acid other than the alkyl sulfonic acid may include one or more selected from the group consisting of acetic acid, citric acid, glycolic acid, malonic acid, lactic acid, and tartaric acid; most preferably, it may include one or more selected from acetic acid and citric acid.

[0048] The content of organic acids other than the alkyl sulfonic acid can be 20 to 50% by weight relative to the total weight of the composition, preferably 30 to 45% by weight. When the content of organic acids other than the alkyl sulfonic acid is within the above-mentioned range, it is easy to control the etching rate of the silver-containing film, thereby preventing defects caused by the generation of silver residue and silver re-adsorption.

[0049] (C) Metal or metal salt

[0050] The metal or metal salt contained in the etching solution composition of the silver-containing thin film of the present invention serves as an anti-silver residue and silver re-adsorption agent for the silver-containing thin film. It can be used to prevent defects caused by silver residue and silver re-adsorption after the silver-containing thin film is oxidized and etched by the nitric acid and the organic acid.

[0051] The metal or metal salt mentioned above is not particularly limited as long as it can prevent residue and re-adsorption. For example, it may include alkali metals, alkaline earth metals and transition metals, preferably transition metals. More preferably, the metal or metal salt mentioned above includes one or more of the group consisting of metals such as Fe, Cu, In, Al and / or metal salts such as Fe, Cu, In, Al, etc. Most preferably, it may include one or more of the group consisting of metal salts of Fe and Fe.

[0052] The content of the metal or metal salt relative to the total weight of the composition is 0.01 to 10% by weight, preferably 0.01 to 3% by weight. When the content of the metal or metal salt is within the above range, adverse effects caused by the formation of silver residue and silver re-adsorption can be prevented.

[0053] (D) Sulfate

[0054] The sulfate contained in the etching solution composition of the silver-containing thin film of the present invention can be used as an etchant for the transparent conductive film to etch the transparent conductive film.

[0055] Furthermore, the sulfate contained in the etching solution composition of the silver-containing thin film of the present invention causes the etching stop phenomenon of the silver-containing thin film, so even if the etching time increases in the etching process, the increase of side etching can be prevented.

[0056] In other words, the etching solution composition of the silver-containing thin film of the present invention, by containing the above-mentioned sulfate, controls the occurrence of etching cessation at an appropriate level, thereby controlling the etching rate and thus adjusting the lateral etching.

[0057] The aforementioned sulfate may include one or more selected from the group consisting of potassium bisulfate, ammonium bisulfate, sodium bisulfate and magnesium sulfate, preferably ammonium bisulfate.

[0058] The content of the sulfate relative to the total weight of the composition is 5 to 30% by weight, preferably 7 to 28% by weight. When the content of the sulfate is within the above range, it is easy to control the etching rate, that is, to control the etching time in the etching process, and the etching stop phenomenon appears regularly, thereby enabling uniform etching of the silver-containing film and the transparent conductive film.

[0059] (E) chloride ions

[0060] The chloride ions contained in the etching solution composition of the silver-containing thin film of the present invention can be used as an inhibitor of wiring loss in the above-mentioned transparent conductive film.

[0061] The chloride ion content relative to the total weight of the silver-containing film composition is 0.01 to 5 ppm. This content is preferably 0.01 to 3 ppm, more preferably 0.01 to 2 ppm, and even more preferably 0.01 to 0.9 ppm. When the chloride content is within the above range, it helps to control filter replacement cycles, wiring loss, and Ag residue.

[0062] The chloride ion content mentioned above refers to the total amount of chloride ions contained in the etching solution composition containing silver thin film.

[0063] (F) Water

[0064] The water contained in the etching solution composition of the silver-containing thin film of the present invention can be deionized water for semiconductor processes, preferably deionized water with a strength of 18 MΩ / cm or higher.

[0065] The water content mentioned above can be included as a margin to make the total weight of the composition 100% by weight.

[0066] Specifically, the term "balance" in this invention refers to a balance that makes the total weight of the composition containing the essential components of this invention and other additional components 100% by weight, and is not limited by the meaning of "balance" to the fact that the composition of this invention does not contain any additional components.

[0067] In one embodiment, the etching solution composition of the silver-containing thin film of the present invention preferably does not contain phosphoric acid, which can induce silver residue and silver re-adsorption.

[0068] <Etching Method Using Silver-Containing Metal Film Etching Solution Composition>

[0069] The present invention provides an etching method using the above-mentioned etching solution composition containing a silver thin film.

[0070] The etching method includes the steps of: forming a single-layer film made of silver or a silver alloy, or a multilayer film made of the single-layer film and a transparent conductive film on a substrate; selectively retaining photoreactive substances on the single-layer film or the multilayer film; and etching the single-layer film or the multilayer film using the etching solution composition of the silver-containing thin film of the present invention.

[0071] The components and properties contained in the above-mentioned silver-containing thin films, silver alloys, multilayer films and etching solution compositions are applicable without limitation to the contents described in the above-mentioned <Etching Solution Compositions Containing Silver Thin Films>.

[0072] The etching solution composition containing silver thin film and the method for forming metal patterns of the present invention can be used for the formation of OLED TFT array substrates for reflective films, trace wiring or nanowire wiring for touch screen panels, but are not limited thereto, and can be used for electronic component materials including the above-mentioned single-layer film and the above-mentioned multilayer film.

[0073] The present invention will now be described in more detail through examples. However, the following examples are for the purpose of illustrating the invention more specifically, and the scope of the invention is not limited to the following examples. The scope of the invention is shown in the claims and includes all modifications within the meaning and scope equivalent to the claims. Furthermore, unless specifically stated otherwise, the terms "%" and "parts" indicating content in the following examples and comparative examples are based on mass.

[0074] Examples and Comparative Examples: Preparation of Etching Solution Compositions Containing Silver Thin Films

[0075] Prepare an etching solution composition for silver-containing thin films by adjusting the components and contents as shown in Table 1 (wt%) below.

[0076] In the table below, the concentrations of nitric acid, MSA, acetic acid, citric acid, ABS, and chloride ions were determined using an ion chromatograph (using a CLASS-VP manufactured by Shimadzu Corporation, with an IC-A3 column), and the concentration of FN was determined using an ICP-MS (manufacturer: PerkinElmer).

[0077] [Table 1]

[0078]

[0079] - MSA: Mesylate

[0080] - ABS: Ammonium bisulfate

[0081] - FN: Ferric nitrate

[0082] For each silver thin film etching solution composition of the above embodiments and comparative examples, the following experimental examples were evaluated in two cases: one in which no silver (Ag) was added, and the other in which an etching process was assumed to have been performed and Ag was dissolved in the silver thin film etching solution composition, with the Ag concentration being 500 ppm.

[0083] Experimental Example

[0084] An ITO / Ag / ITO three-layer film is formed on a substrate, and an etching process is performed using experimental equipment of jet etching type (Model: ETCHER(TFT), SEMES Co., Ltd.). The etching liquid compositions for silver-containing films of the above Examples 1 to 9 and Comparative Examples 1 to 2 are put into the equipment respectively, after the temperature is set to 40°C and the temperature is raised, when the temperature reaches 40±0.1°C, the etching process for the above ITO / Ag / ITO three-layer film is performed. The total implementation time of etching is 90 seconds.

[0085] (1) Evaluation of wiring loss and silver residue

[0086] For the loss of wirings (or reflective films), the image of the entire substrate after etching is measured by an optical microscope. For Ag residue, the etched portion of the anode wiring is measured. After the above etching process, the substrate is taken out and washed with deionized water, and then dried using a hot air drying device. After washing and drying, for the substrate, an optical microscope (OLS:5000, manufactured by Olympus Corporation) is used to measure wiring loss and residue for 2000 wirings. The results of wiring loss and silver residue are shown in Table 2 below.

[0087] <Wiring Loss>

[0088] O: Good (fewer than 5 disappeared or narrowed wirings among 2000 wirings)

[0089] X: Poor (5 or more disappeared or narrowed wirings among 2000 wirings)

[0090] <Silver Residue>

[0091] O: Good (fewer than 5 Ag residue forms among 2000 etched wirings)

[0092] X: Poor (5 or more Ag residue forms among 2000 etched wirings)

[0093] (2) Evaluation of silver chloride (AgCl) precipitate

[0094] For silver chloride (AgCl) precipitate, filtration is performed and its weight is measured for 4 kg of etching liquid when the Ag concentration is 0 ppm and 500 ppm respectively.

[0095] <AgCl Precipitate>

[0096] O: Good [0.03g or less]

[0097] X: Poor [more than 0.03g]

[0098] (3) Evaluation of filter replacement cycle

[0099] Regarding the filter replacement cycle, the time point at which filter clogging due to impurities occurs when the Ag concentration is 500 ppm was evaluated based on the following benchmarks, and the results are shown in Table 2 below.

[0100] <Filter Replacement Cycle Evaluation Criteria>

[0101] O: Good [more than 20 days]

[0102] X: Poor quality [less than 20 days]

[0103] [Table 2]

[0104]

[0105] As shown in Table 2 above, in the case of the etching solution composition containing silver thin film in Examples 1 to 9, the chloride ion content is in the range of 0.01 to 5 ppm relative to the total weight of the etching solution composition. Therefore, out of 2000 wires, fewer than 5 wires disappeared or shrank, confirming that the film as a whole did not experience wire loss, no residue was generated, the silver chloride precipitate level was good, and the filter replacement cycle was longer than 20 days.

[0106] In contrast, in Comparative Example 1, since chloride ions were not present, wiring loss was observed.

[0107] Furthermore, in Comparative Example 2, the chloride ion content was excessive, exceeding 5 ppm, which caused wiring loss and residue, and the filter replacement cycle was very short, approximately 4 days. This confirmed that the frequent and short filter replacement cycle was due to silver chloride precipitation.

Claims

1. An etching solution composition for a silver-containing thin film, comprising (A) nitric acid, (B) an organic acid, (C) a metal or metal salt, (D) a sulfate, (E) chloride ions, and (F) water. The content of (E) chloride ions is 0.01 to 5 ppm relative to the total weight of the etching solution composition containing the silver film.

2. The etching solution composition for the silver-containing thin film according to claim 1, wherein, The (B) organic acids include organic acids other than (B-1) alkyl sulfonic acids and (B-2) alkyl sulfonic acids.

3. The etching solution composition for the silver-containing thin film according to claim 2, wherein, The (B-1) alkyl sulfonic acid is an alkyl sulfonic acid with 1 to 3 carbon atoms.

4. The etching solution composition for the silver-containing thin film according to claim 2, wherein, The organic acid other than the (B-2) alkyl sulfonic acid is selected from one or more of the group consisting of acetic acid, citric acid, malonic acid, butyric acid, formic acid, gluconic acid, glycolic acid, oxalic acid, valeric acid, sulfobenzoic acid, sulfosuccinic acid, sulfophthalic acid, salicylic acid, sulfosalicylic acid, benzoic acid, lactic acid, glyceric acid, succinic acid, malic acid, tartaric acid, isocitric acid, acrylic acid, iminodiacetic acid, and ethylenediaminetetraacetic acid.

5. The etching solution composition for the silver-containing thin film according to claim 1, wherein, The metal or metal salt mentioned in (C) is one or more selected from the group consisting of Fe, Cu, In, Al and their metal salts.

6. The etching solution composition for the silver-containing thin film according to claim 1, wherein, The (D) sulfate comprises one or more selected from the group consisting of ammonium bisulfate, potassium bisulfate, sodium bisulfate and magnesium sulfate.

7. The etching solution composition for a silver-containing thin film according to claim 2, wherein, Relative to the total weight of the composition, it comprises: (A) Nitric acid 7 to 15% by weight; (B-1)alkyl sulfonic acid 3 to 8% by weight; 20 to 50% by weight of organic acids other than (B-2) alkyl sulfonic acids; (C) 0.01 to 10% by weight of metal or metal salt. (D) Sulfates 5 to 30% by weight; (E) Chloride ions 0.01 to 5 ppm; and (F) The remaining amount of water.

8. The etching solution composition for the silver-containing thin film according to claim 1, wherein, The etching solution composition containing the silver film etches a single-layer film made of silver or a silver alloy, or simultaneously etches a multilayer film made of the single-layer film and a transparent conductive film.

9. The etching solution composition for a silver-containing thin film according to claim 8, wherein, The transparent conductive film is selected from one or more of the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), and indium gallium zinc oxide (IGZO).

10. The etching solution composition for a silver-containing thin film according to claim 8, wherein, The multilayer film comprises a transparent conductive film / silver, a transparent conductive film / silver alloy, a transparent conductive film / silver / transparent conductive film, or a transparent conductive film / silver alloy / transparent conductive film.

11. An etching method, comprising: The step of forming a single-layer film made of silver or a silver alloy, or a multilayer film made of the single-layer film and a transparent conductive film on a substrate. The step of selectively retaining photoreactive substances on the single-layer film or the multilayer film; as well as The step of etching the single-layer film or the multilayer film using the composition of any one of claims 1 to 10.

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