Evaporation equipment and evaporation methods

Abstract

The application provides an evaporation device and an evaporation method thereof. The evaporation device comprises a transmission mechanism, a plurality of evaporation stations and a plurality of evaporation sources. The plurality of evaporation stations are arranged in the evaporation chamber and are arranged at intervals along the transmission direction of the transmission mechanism. The evaporation sources are arranged below the corresponding evaporation stations. The transmission mechanism is used for transmitting the substrate from the previous evaporation station to the next evaporation station. The evaporation sources are used for evaporating the evaporation material on the substrate surface in sequence when the substrate passes through the corresponding evaporation station, thereby greatly improving the evaporation efficiency, reducing material waste and improving the production efficiency.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a vapor deposition apparatus and a vapor deposition method thereof. Background Technology

[0002] OLED (Organic Light-Emitting Diode) is an active light-emitting device with a sandwich structure consisting of multiple organic layers and electrodes on both sides. Currently, AMOLED (Active-Matrix Organic Light-Emitting Diode) based displays have been commercialized in fields such as smartphones, watches, and laptops.

[0003] In the fabrication of OLED display panels, the desired patterns need to be formed on the substrate using a fine metal mask (FMM) through vapor deposition. However, existing vapor deposition equipment suffers from low deposition efficiency. Summary of the Invention

[0004] In view of this, the purpose of this application is to provide a vapor deposition apparatus that can improve vapor deposition efficiency.

[0005] To achieve the above objectives, this application provides a vapor deposition apparatus for vapor deposition on a substrate, comprising:

[0006] A vapor deposition chamber, the vapor deposition chamber including a chamber inlet and a chamber outlet;

[0007] A transfer mechanism is at least partially disposed within the vapor deposition chamber. The transfer mechanism includes a moving unit and a driving unit. The moving unit is continuously disposed between the chamber inlet and the chamber outlet. The driving unit is connected to the moving unit and drives the moving unit to move from the chamber inlet to the chamber outlet. The moving unit is used to carry the substrate and transfer the substrate from the chamber inlet to the chamber outlet.

[0008] Multiple vapor deposition stations are arranged in the vapor deposition chamber and spaced apart along the transmission direction of the transmission mechanism.

[0009] Multiple evaporation sources are provided, each positioned below a corresponding vapor deposition station. A transfer mechanism is used to transfer the substrate from one vapor deposition station to the next. The evaporation sources are used to sequentially deposit vapor deposition materials onto the surface of the substrate as it passes through the corresponding vapor deposition station.

[0010] In one embodiment, the evaporation source includes:

[0011] A crucible containing the vapor-deposited material;

[0012] A heating device is used to heat the crucible so that the vapor deposition material inside the crucible is heated and evaporated.

[0013] A nozzle, which is connected to the crucible, is used to deposit heated and evaporated material vapor onto the surface of the substrate.

[0014] In one embodiment, during the vapor deposition process, the number of substrates in the vapor deposition chamber is greater than the number of crucibles, and the substrates in the vapor deposition chamber are partially located at the vapor deposition station and partially located on the moving unit between two adjacent vapor deposition stations.

[0015] In one embodiment, the crucible in each of the evaporation sources contains the same or different vapor deposition materials, and the plurality of evaporation sources sequentially vapor deposit the same or different vapor deposition materials onto the surface of the substrate.

[0016] In one embodiment, the vapor deposition equipment further includes an alignment and bonding chamber, which is disposed on one side of the chamber entrance. The alignment and bonding chamber is used to align and bond the substrate with the mask before the substrate enters the vapor deposition chamber.

[0017] The mask plate includes a frame and a mask body, the mask body is disposed on the frame, the moving unit contacts the frame and supports the frame, and the substrate is located on the side of the mask body away from the moving unit.

[0018] In one embodiment, the moving unit includes a first conveyor belt and a second conveyor belt, which are spaced apart and are used to abut against the bottom of the frame and support the frame.

[0019] In one embodiment, the first conveyor belt includes a first straight segment, a first arc segment, and a second straight segment, which are connected in sequence; the second conveyor belt includes a third straight segment, a second arc segment, and a fourth straight segment, which are connected in sequence.

[0020] The first straight segment and the third straight segment are parallel and spaced apart, and the first straight segment and the third straight segment cooperate to support the frame; the second straight segment and the fourth straight segment are parallel and spaced apart, and the second straight segment and the fourth straight segment cooperate to support the frame; the first arc segment and the second arc segment are parallel and spaced apart.

[0021] Based on the same inventive concept, this application also discloses a vapor deposition method, applied to the vapor deposition equipment described in any one of the above claims, comprising:

[0022] The substrate is placed on the moving unit inside the vapor deposition chamber from the chamber inlet;

[0023] The driving unit drives the moving unit, and the moving unit drives the substrate to pass through each of the evaporation stations in sequence. The evaporation source below each of the evaporation stations deposits the evaporation material onto the surface of the substrate in sequence.

[0024] The vapor-deposited substrate is removed from the chamber outlet.

[0025] In one embodiment, the evaporation source includes a crucible, a heating device, and a nozzle. The crucible holds the vapor deposition material. The heating device heats the crucible, causing the vapor deposition material inside to evaporate. The nozzle communicates with the crucible and deposits the heated and evaporated material vapor onto the substrate surface. Each crucible in each evaporation source holds the same or different vapor deposition materials. The evaporation sources below each vapor deposition station sequentially deposit the vapor deposition material onto the substrate surface, including:

[0026] The evaporation sources below each of the aforementioned evaporation stations sequentially deposit the same or different evaporation materials onto the surface of the substrate;

[0027] Preferably, the driving unit drives the moving unit, and the moving unit moves the substrate sequentially through each of the evaporation stations. The evaporation source below each of the evaporation stations sequentially deposits evaporation material onto the surface of the substrate, including:

[0028] The nozzles in each of the evaporation sources remain stationary relative to the vapor deposition chamber. The moving unit is driven by the driving unit, and as the moving unit moves the substrate past each of the evaporation sources in sequence, each of the evaporation sources deposits vapor deposition material onto the surface of the substrate in sequence.

[0029] In one embodiment, the vapor deposition apparatus further includes an alignment and bonding chamber disposed on one side of the chamber inlet; prior to placing the substrate from the chamber inlet onto the moving unit within the vapor deposition chamber, the apparatus further includes:

[0030] The substrate and the mask are aligned and bonded using the alignment and bonding chamber.

[0031] Compared with the prior art, the vapor deposition equipment provided in this application is provided with a transfer mechanism, multiple vapor deposition stations and multiple evaporation sources in a vapor deposition chamber. The multiple vapor deposition stations are arranged in the vapor deposition chamber and are spaced apart along the transfer direction of the transfer mechanism. The evaporation sources are arranged below the corresponding vapor deposition stations. The transfer mechanism is used to transfer the substrate from the previous vapor deposition station to the next vapor deposition station. The evaporation sources are used to sequentially vapor deposit the vapor deposition material on the surface of the substrate when the substrate passes the corresponding vapor deposition station, thereby greatly improving the vapor deposition efficiency, reducing material waste and improving production efficiency. Attached Figure Description

[0032] To more clearly illustrate the technical solutions in this application or related technologies, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0033] Figure 1 This is a schematic diagram of the structure of a vapor deposition apparatus provided in an embodiment of this application;

[0034] Figure 2 This is a partial structural schematic diagram of a vapor deposition apparatus provided in another embodiment of this application;

[0035] Figure 3 This is a schematic diagram of the structure of a vapor deposition apparatus provided in another embodiment of this application;

[0036] Figure 4 This is a schematic diagram of the structure of a mask plate provided in another embodiment of this application;

[0037] Figure 5 This is a schematic diagram of the structure of a moving unit provided in another embodiment of this application;

[0038] Figure 6 A flowchart of a vapor deposition method provided in another embodiment of this application.

[0039] Marker explanation:

[0040] 100. Evaporation equipment; 200. Substrate; 300. Mask plate; 310. Frame; 320. Mask body;

[0041] 10. Evaporation chamber; 11. Chamber inlet; 12. Chamber outlet;

[0042] 20. Moving unit; 21. First conveyor belt; 211. First straight segment; 212. First arc segment; 213. Second straight segment; 22. Second conveyor belt; 221. Third straight segment; 222. Second arc segment; 223. Fourth straight segment;

[0043] 30. Evaporation station;

[0044] 40. Evaporation source; 41. Crucible; 42. Heating device; 43. Nozzle;

[0045] 50. Alignment and fitting of the cavity. Detailed Implementation

[0046] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with specific embodiments and the accompanying drawings.

[0047] It should be noted that, unless otherwise defined, the technical or scientific terms used in the embodiments of this application should have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains. The terms "first," "second," and similar terms used in the embodiments of this application do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as "comprising" or "including" mean that the element or object preceding the word encompasses the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Terms such as "connected" or "linked" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. Terms such as "upper," "lower," "left," and "right" are only used to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0048] In OLED display panel fabrication, flake-metal evaporation (FMM) is a key process for forming pixel patterns. OLED display panel evaporation is primarily based on the principle of physical vapor deposition, as detailed below:

[0049] Heating evaporation: In a high-vacuum evaporation chamber, organic or metallic materials in the evaporation source are heated. Common heating methods include resistance heating, electron beam heating, and laser heating. For example, resistance heating generates heat by passing an electric current through a resistance wire, raising the temperature of the material inside the evaporation boat; electron beam heating uses a high-energy electron beam to bombard the material, converting the kinetic energy of the electrons into thermal energy. When the material reaches a certain temperature, it transforms from a solid to a gaseous state, forming atoms or molecules of the evaporated material.

[0050] Molecular motion: Under high vacuum conditions, the atoms or molecules of the vapor-deposited material have a long path of freedom, enabling them to diffuse in all directions from the evaporation source in a linear motion. Because there are very few gas molecules in a vacuum environment, collisions between the vapor-deposited material atoms or molecules and other gas molecules are reduced, thus ensuring that they can directly reach the substrate surface.

[0051] Patterning: A finely patterned membrane (FMM) is placed between the evaporation source and the substrate. The FMM has fine openings corresponding to the OLED pixel pattern. Only atoms or molecules of the evaporated material that pass through the openings of the FMM can reach the substrate surface and be deposited; atoms or molecules in other directions are blocked by the FMM. In this way, a thin film pattern consistent with the FMM opening pattern is formed on the substrate, achieving precise pixel patterning.

[0052] Thin film growth: Upon reaching the substrate surface, evaporated material atoms or molecules adsorb, diffuse, and aggregate on the substrate surface. As the evaporation time increases, material continues to deposit, and atoms or molecules gradually accumulate to form a thin film. By precisely controlling parameters such as evaporation time, evaporation rate, and substrate temperature, the thickness and quality of the thin film can be controlled, ensuring uniform performance for each pixel.

[0053] The inventors discovered that existing vapor deposition equipment requires transferring the substrate between various vacuum chambers during the vapor deposition process to achieve multiple vapor deposition steps. This results in low vapor deposition efficiency and material waste.

[0054] Therefore, the purpose of this application is to provide a vapor deposition apparatus to solve the above-mentioned problems.

[0055] Please refer to Figure 1-4 As shown, an evaporation deposition apparatus 100 provided in an embodiment of this application includes an evaporation deposition chamber 10, a transfer mechanism, multiple evaporation deposition stations 30 and multiple evaporation sources 40. The evaporation deposition chamber 10 includes a chamber inlet 11 and a chamber outlet 12.

[0056] The transfer mechanism is at least partially disposed within the vapor deposition chamber 10. The transfer mechanism includes a moving unit 20 and a driving unit. The moving unit 20 is continuously disposed between the chamber inlet 11 and the chamber outlet 12. The driving unit is connected to the moving unit 20 and drives the moving unit 20 to move from the chamber inlet 11 to the chamber outlet 12. The moving unit 20 is used to carry the substrate 200 and transfer the substrate 200 from the chamber inlet 11 to the chamber outlet 12.

[0057] Multiple vapor deposition stations 30 are arranged in the vapor deposition chamber 10 and are spaced apart along the transmission direction of the transmission mechanism; the evaporation source 40 is arranged below the corresponding vapor deposition station 30; the transmission mechanism is used to transfer the substrate 200 from the previous vapor deposition station 30 to the next vapor deposition station 30; the evaporation source 40 is used to sequentially vapor deposit the vapor deposition material on the surface of the substrate 200 when the substrate 200 passes the corresponding vapor deposition station 30.

[0058] The vapor deposition equipment 100 provided in this embodiment includes a transfer mechanism, multiple vapor deposition stations 30, and multiple evaporation sources 40 within a vapor deposition chamber 10. The multiple vapor deposition stations 30 are arranged in the vapor deposition chamber 10 and spaced apart along the transfer direction of the transfer mechanism. The evaporation sources 40 are located below the corresponding vapor deposition station 30. The transfer mechanism is used to transfer the substrate 200 from one vapor deposition station 30 to the next. The evaporation sources 40 are used to sequentially vapor-deposit material onto the surface of the substrate 200 as it passes through the corresponding vapor deposition station 30, thereby significantly improving vapor deposition efficiency, reducing material waste, and increasing production efficiency.

[0059] In one embodiment, the substrate 200 includes the following film layers:

[0060] Substrate layer: Generally, it is a glass substrate or a plastic substrate. Glass substrates have good flatness, mechanical strength, and chemical stability, providing stable support for subsequent film layers; plastic substrates have advantages such as good flexibility and light weight, making them suitable for flexible OLED displays. This layer is usually not formed by vapor deposition, but by using off-the-shelf substrate materials.

[0061] Transparent conductive anode layer: Typically, indium tin oxide (ITO) thin film is used. This film needs to have good transparency and conductivity to enable electrical injection into OLED devices. It is generally formed by methods such as magnetron sputtering in physical vapor deposition (PVD). However, some studies have attempted to prepare high-quality ITO thin films using evaporation, but evaporation processes are rarely used in actual production.

[0062] Buffer layer: Located between the anode and the hole injection layer, its main function is to improve the smoothness and work function of the anode surface, thereby increasing hole injection efficiency. This layer is typically prepared using a solution spin-coating method rather than vapor deposition.

[0063] Hole Injection Layer (HIL): This layer facilitates efficient hole injection from the anode into the hole transport layer. Some small organic molecule materials, such as copper phthalocyanine (CuPc), can be used for this layer, which is typically formed by vapor deposition. Vapor deposition allows for precise control of the film thickness and uniformity, which is beneficial for improving hole injection efficiency.

[0064] Hole transport layer (HTL): Responsible for transporting holes from the anode to the light-emitting layer. It is generally prepared by vapor deposition to ensure good crystallinity and hole transport performance.

[0065] Emitting Layer (EML): This is the core layer for OLEDs to emit light. It is composed of different organic light-emitting materials, with the appropriate material selected based on the desired color. This layer is formed through vapor deposition to precisely control its thickness, composition, and structure, achieving efficient light emission and accurate color display.

[0066] Electron transport layer (ETL): Its main function is to transport electrons from the cathode to the light-emitting layer, enabling electrons and holes to recombine effectively in the light-emitting layer to emit light. Commonly used electron transport materials are usually formed by vapor deposition to ensure their electron transport performance and good contact with other film layers.

[0067] Electron injection layer (EIL): Located between the cathode and the electron transport layer, it helps the cathode inject electrons more effectively. Some metal fluorides or oxides, such as LiF and BaO, can be used as electron injection layer materials. They are generally prepared by vapor deposition and can form a good interface between the cathode and the electron transport layer, reducing the electron injection barrier.

[0068] Metal cathode layer: Typically, metals with low work function, such as aluminum (Al), silver (Ag), magnesium (Mg), and their alloys, are used to provide electron injection for the device. This layer is generally formed by vapor deposition, where the metal is evaporated and deposited onto the electron injection layer or electron transport layer under a high vacuum environment to form a cathode with good conductivity and electron injection capability.

[0069] Optionally, the moving unit 20 can be a conveyor belt. Specifically, it can consist of a ring-shaped belt, support rollers, and drive rollers. The belt wraps around the rollers, forming a closed ring-shaped conveyor belt, on which the substrate is placed for transport. Its advantages include: continuous transport of the substrate 200, suitable for continuous operation in large-scale production, and automated loading and unloading. It also has a strong load-bearing capacity, and belts of different widths and materials can be selected to accommodate substrates 200 of different sizes and weights.

[0070] Optionally, the moving unit 20 can be a vacuum suction cup stage. Specifically, it can consist of a vacuum suction cup and a stage. The vacuum suction cup adheres to the surface of the substrate 200 through negative pressure, fixing the substrate 200 onto the stage, which can move on a guide rail or other guiding mechanism. Its advantages include: uniform suction force on the substrate 200, preventing damage to the substrate 200 during transport. It is suitable for substrates of various shapes and materials, especially providing good protection for thin or fragile substrates.

[0071] Optionally, the drive unit can be a motor drive, specifically a stepper motor, servo motor, etc. A stepper motor can convert electrical pulse signals into angular displacement, achieving precise position control; a servo motor offers higher precision and dynamic response performance, enabling rapid adjustment of speed and position based on control signals. Transmission method: The rotational motion of the motor is converted into linear motion or other forms of motion of the moving unit through transmission mechanisms such as gears, belts, and lead screws. For example, a motor drives the drive rollers of a conveyor belt via belt transmission; a lead screw transmission converts the rotational motion of the motor into linear motion of a robotic arm or vacuum suction cup platform. Its advantages include: high control precision, enabling precise position positioning and speed control; and fast response speed, allowing for rapid start-up, stopping, and adjustment of motion states according to production rhythm.

[0072] Optionally, the drive unit can be hydraulically driven, specifically composed of a hydraulic pump, hydraulic cylinder, and hydraulic valves. The hydraulic pump pressurizes hydraulic oil and delivers it to the hydraulic cylinder, pushing the piston to move, thereby driving the moving unit. The hydraulic valves are used to control the flow and direction of the hydraulic oil, realizing the adjustment of the movement speed and direction. Its advantages include: it has a large driving force, which can meet the requirements of large and heavy-duty substrate transmission; the movement is smooth with low impact, making it suitable for applications requiring high stability in the transmission process.

[0073] Optionally, the drive unit can be pneumatically driven, specifically including an air source, a pneumatic cylinder, and a pneumatic valve. The air source provides compressed air, and the flow direction and flow rate of the compressed air are controlled by the pneumatic valve to drive the piston movement of the pneumatic cylinder, thereby moving the moving unit. Its advantages include: lower cost, simple structure, and convenient maintenance. It also offers fast operation, enabling rapid transfer and positioning of the substrate.

[0074] In one embodiment, the substrates 200 are closely arranged along the transport direction on the moving unit 20, reducing the gap between adjacent substrates 200 and thus reducing the waste of vapor deposition material. During vapor deposition, two substrates 200 appear on the same vapor deposition station 30, with the rear half of the first substrate 200 and the front half of the second substrate 200 located at the same vapor deposition station 30, thereby significantly improving vapor deposition efficiency and reducing material waste.

[0075] Reference Figure 2 As shown, in one embodiment, the evaporation source 40 includes a crucible 41, a heating device 42, and a nozzle 43. The crucible 41 holds the vapor deposition material; the heating device 42 is used to heat the crucible 41 to make the vapor deposition material in the crucible 41 heat up and evaporate; the nozzle 43 is connected to the crucible 41 and is used to deposit the heated and evaporated material vapor onto the surface of the substrate 200.

[0076] The evaporation source 40 operates on the principle of sublimation or evaporation. In a high vacuum environment, the evaporation material in the crucible 41 is heated by the heating device 42, raising its temperature above its sublimation or boiling point. The material then directly transforms from a solid to a gaseous state (sublimation) or from a liquid to a gaseous state (evaporation). Due to the large mean free path of gas molecules in a vacuum environment, the evaporated material vapor is ejected from the nozzle in a linear motion and deposited on the surface of the substrate 200, forming a uniform thin film layer. By precisely controlling parameters such as heating temperature, evaporation rate, nozzle design, and vacuum environment, the thickness, uniformity, and composition of the evaporated film can be precisely controlled, thus meeting the fabrication requirements of different functional layers in OLED display panels. For example, for the organic light-emitting layer, precise control of the evaporation thickness and uniformity of the organic material is required to achieve good luminous performance and display effects; for the metal electrode layer, the evaporation quality of the metal material must be ensured to provide good conductivity and stability.

[0077] Optionally, crucible 41 is made of a material with high temperature resistance and good chemical stability, such as boron nitride. To precisely control the evaporation process, the shape, size, and material of the crucible are designed according to different vapor deposition materials and process requirements. For example, for organic materials, a smaller crucible may be used to achieve precise dosage control; for metallic materials, crucible 41 may need to have higher high temperature resistance.

[0078] Optionally, the heating method of the heating device 42 can be resistance heating, electron beam heating, or laser heating. Taking resistance heating as an example, heating elements, such as heating wires or heating plates, are generally placed around or at the bottom of the crucible. When current passes through these heating elements, heat is generated, which in turn causes the vapor-deposited material inside the crucible 41 to heat up and evaporate. Furthermore, the heating device 42 is also equipped with a temperature control system to precisely control the heating temperature and rate, ensuring that the vapor-deposited material can evaporate at a stable rate.

[0079] Optionally, the nozzle 43 is located at the top of the evaporation source 40. The material vapor after heating and evaporation is ejected through the nozzle 43 and deposited towards the substrate 200. The design of the nozzle 43 affects the vapor ejection angle, velocity, and distribution uniformity, and is typically optimized based on the size, shape, and vapor deposition process requirements of the substrate 200. Optionally, each evaporation source 40 is equipped with multiple nozzles 43, which are arranged along a transport direction perpendicular to the substrate 200 to achieve a more uniform vapor deposition distribution.

[0080] Furthermore, the evaporation source 40 also includes a cooling device. This cooling device prevents the evaporation source 40 from overheating during operation and avoids condensation of the vapor-deposited material in unintended areas. The cooling device can consist of cooling pipes or heat sinks, etc., and uses circulating cooling water or other cooling media to remove heat, maintaining the temperature of the evaporation source within a suitable range.

[0081] Furthermore, the evaporation source 40 also includes a cover plate and a sealing structure. The cover plate is used to cover components such as the crucible 41 and the heating device 42. On the one hand, it can prevent external impurities from entering the interior of the evaporation source 40 and affecting the purity of the vapor-deposited material; on the other hand, it also helps to maintain the stability of the temperature and atmosphere inside the evaporation source. The sealing structure ensures that the evaporation source 40 is in a sealed state during operation, avoiding vapor leakage and improving vapor deposition efficiency and quality.

[0082] Please continue to refer to Figure 1 As shown, in one embodiment, during the vapor deposition process, the number of substrates 200 in the vapor deposition chamber 10 is greater than the number of crucibles 41. Some of the substrates 200 in the vapor deposition chamber 10 are located at the vapor deposition station 30, and some are located on the moving unit 20 between two adjacent vapor deposition stations 30, which helps to improve the vapor deposition efficiency and reduce the waste of vapor deposition materials.

[0083] During vapor deposition, some substrates 200 in the vapor deposition chamber 10 are located at vapor deposition station 30, and some substrates 200 are located on the moving unit 20 between two adjacent vapor deposition stations 30. The substrates 200 located on the moving unit 20 between two adjacent vapor deposition stations 30 can quickly reach the next vapor deposition station 30, which helps to improve vapor deposition efficiency and reduce the waste of vapor deposition materials.

[0084] In one embodiment, the crucible 41 in each evaporation source 40 contains the same vapor deposition material. Multiple evaporation sources 40 sequentially deposit the same vapor deposition material onto the surface of the substrate 200, which helps improve the vapor deposition efficiency. For example, there are three evaporation sources 40, and the crucibles 41 in all three evaporation sources 40 contain the same vapor deposition material. As the substrate 200 passes through each evaporation source 40, a vapor deposition material with a thickness of d is deposited on the surface of the substrate 200. The three evaporation sources 40 collectively deposit a vapor deposition material with a thickness of 3*d on the surface of the substrate 200. This allows the substrate 200 to rotate rapidly, improving vapor deposition efficiency while reducing waste of vapor deposition material.

[0085] In another embodiment, each evaporation source 40 contains a crucible 41 containing a different vapor deposition material. Multiple evaporation sources 40 sequentially vapor deposit different vapor deposition materials onto the surface of the substrate 200, which is beneficial to improve vapor deposition efficiency and is suitable for different film layer structures. For example, there are three evaporation sources 40. The crucible 41 of the first evaporation source 40 holds the first vapor deposition material, the crucible 41 of the second evaporation source 40 holds the second vapor deposition material, and the crucible 41 of the third evaporation source 40 holds the third vapor deposition material. When the substrate 200 passes through the first evaporation source 40, the first vapor deposition material with a thickness of d1 is vapor deposited on the surface of the substrate 200. When it passes through the second evaporation source 40, the second vapor deposition material with a thickness of d2 is vapor deposited on the surface of the substrate 200. When it passes through the third evaporation source 40, the third vapor deposition material with a thickness of d3 is vapor deposited on the surface of the substrate 200. The three evaporation sources 40 together vapor deposit material with a thickness of d1+d2+d3 on the surface of the substrate 200, which can make the substrate 200 flow quickly, improve the vapor deposition efficiency, and reduce the waste of vapor deposition material.

[0086] Reference Figure 3 As shown, in one embodiment, the vapor deposition apparatus 100 further includes an alignment and bonding chamber 50, which is disposed on one side of the chamber inlet 11. The alignment and bonding chamber 50 is used to align and bond the substrate 200 with the mask 300 before the substrate 200 enters the vapor deposition chamber 10. (Refer to...) Figure 2 and 4 As shown, the mask 300 includes a frame 310 and a mask body 320. The mask body 320 is disposed on the frame 310. The moving unit 20 contacts and supports the frame 310. The substrate 200 is located on the side of the mask body 320 away from the moving unit 20. The alignment and bonding chamber 50 allows for rapid alignment and bonding of the substrate 200 and the mask 300, thereby improving the evaporation efficiency.

[0087] The shape or size of the frame 310 can be selected according to the actual vapor deposition requirements. The frame 310 may be provided with grooves to support multiple mask bodies 320 to be stretched. The mask bodies 320 may have multiple mask openings spaced apart, forming multiple spaced mask blocks. The mask body 320 can be understood as a mask strip for patterned etching. During vapor deposition, the vapor deposition material is evaporated by heating through the evaporation source 40. The evaporated material passes through the mask openings on the mask body 320 and condenses on the substrate 200 to be vapor deposited to form a thin film.

[0088] Optionally, the main body of the alignment and fitting chamber 50 is made of high-strength, corrosion-resistant materials such as stainless steel to ensure the sealing and stability of the chamber and to withstand vacuum environment and external mechanical stress.

[0089] Optionally, the alignment and bonding chamber 50 also includes a vacuum system equipped with a high-performance vacuum pump assembly, which can reduce the air pressure in the chamber to an extremely low level, reduce the interference of air molecules on the bonding process, prevent impurities from entering, and improve the bonding quality.

[0090] Optionally, the alignment and bonding chamber 50 also includes an optical inspection system, with a high-precision optical microscope or industrial camera mounted on the top or side of the chamber to observe the alignment marks on the substrate 200 and the mask 300. Combined with image processing algorithms, the positional deviation between the two can be accurately measured, providing data support for adjustments.

[0091] Optionally, the alignment and bonding chamber 50 also includes an adjustment mechanism, employing a worktable or fixture capable of precise movement in three dimensions, for fixing and adjusting the positions of the substrate 200 and the mask 300. It typically consists of a combination of high-precision lead screws, guide rails, and stepper or servo motors, achieving sub-micron level positioning accuracy.

[0092] The alignment and bonding process is as follows:

[0093] Initial placement: The substrate 200 and the mask plate 300 are placed in designated positions within the cavity and initially fixed using mechanical clamps or vacuum adsorption to ensure they are roughly in the initial aligned position.

[0094] Optical Inspection and Analysis: The optical inspection system is activated to acquire image information of the alignment marks on the substrate 200 and the mask 300. Image processing software is used to analyze the images and calculate the positional and angular deviations of the two in the horizontal and vertical directions.

[0095] Fine adjustment: Based on the deviation data fed back by the optical inspection system, the adjustment mechanism is controlled to perform fine adjustments on the substrate 200 or the mask 300. Through the translation and rotation of the worktable, the alignment marks of the substrate and the mask are precisely aligned to achieve the set alignment accuracy requirements.

[0096] Bonding Operation: After alignment, the substrate 200 and the mask 300 are bonded together tightly using an appropriate bonding method. For example, a certain pressure can be applied, or electrostatic adsorption, magnetic adsorption, or other principles can be used to ensure good contact between the two and prevent relative displacement during subsequent vapor deposition.

[0097] Furthermore, a temperature sensor and a heating / cooling device can be installed in the alignment and bonding chamber 50 to control the chamber temperature within the range of 20℃-25℃, so as to avoid thermal expansion or contraction of the substrate 200 and the mask 300 due to temperature changes, which would affect the alignment accuracy.

[0098] Humidity control: Install humidity control equipment to keep the humidity in the chamber below 30% to prevent water vapor from condensing on the surfaces of the substrate 200 and mask 300, which would affect the bonding effect and film quality.

[0099] Furthermore, in the alignment and bonding chamber 50 automation and control system, computer programming is used to realize the automated control of the alignment and bonding process, including the feeding, positioning, detection, adjustment and bonding of the substrate 200 and the mask 300, thereby improving production efficiency and consistency.

[0100] Real-time monitoring and feedback: The control system monitors various parameters in the chamber in real time, such as position, pressure, temperature, and humidity, and feeds the data back to the operator or makes automatic adjustments to ensure that the entire alignment and bonding process is in a stable working state.

[0101] Please continue to refer to Figure 1 and 2 As shown, in one embodiment, the moving unit 20 includes a first conveyor belt 21 and a second conveyor belt 22, which are spaced apart. The first conveyor belt 21 and the second conveyor belt 22 are used to abut against the bottom of the frame 310 and support the frame 310. The spaced arrangement of the first conveyor belt 21 and the second conveyor belt 22 facilitates the deposition of vapor-deposited material from the substrate 200 onto the surface of the substrate 200. The first conveyor belt 21 and the second conveyor belt 22 cooperate to transport the substrate 200.

[0102] Furthermore, the moving unit 20 also includes a control system and a feedback system. The control system receives external input commands, such as target position and speed information, processes them, and sends control signals to the motor driver to coordinate the movement of each axis. The feedback system typically uses sensors such as encoders and linear encoders to monitor the actual position and motion state of each axis in real time and feeds the information back to the control system for error correction and closed-loop control.

[0103] Its working principle is as follows: Command-based motion control: The operator or host computer software inputs commands such as target position, velocity, and acceleration into the control system. The kinematics calculation module in the control system calculates the distance and direction that each axis needs to move based on these commands and the current position of each axis. The path planning module determines the optimal path from the current position to the target position, commonly using algorithms such as linear interpolation and circular interpolation. The interpolation algorithm, based on the path planning, calculates the position and velocity of each axis at each time point and converts them into control signals for the motors.

[0104] Motor drive and transmission: The motor controller receives signals from the control system and converts them into drive signals that the motor can understand, such as PWM signals, to drive the motor to rotate. The motor converts the rotational motion into the linear motion of the slider on the guide rail through transmission devices such as lead screws, synchronous belts, or racks and pinions, thereby driving the load to move in the corresponding axial direction.

[0105] Feedback and closed-loop control: Feedback sensors monitor the motor's position, speed, and other information in real time and feed this data back to the control system. The control system compares the feedback values ​​with the target values, adjusts the control commands according to the error, and continuously optimizes the motion of each axis to ensure that the system can accurately and stably reach the target position.

[0106] Reference Figure 5 As shown, in one embodiment, the first conveyor belt 21 includes a first straight segment 211, a first arc-shaped segment 212, and a second straight segment 213, which are connected sequentially. The second conveyor belt 22 includes a third straight segment 221, a second arc-shaped segment 222, and a fourth straight segment 223, which are connected sequentially. The first straight segment 211 and the third straight segment 221 are parallel and spaced apart, and they cooperate with the support frame 310. The second straight segment 213 and the fourth straight segment 223 are parallel and spaced apart, and they cooperate with the support frame 310. The first arc-shaped segment 212 and the second arc-shaped segment 222 are parallel and spaced apart. This helps to reduce the distance between the chamber inlet 11 and the chamber outlet 12, and reduces the requirements of the evaporation equipment 100 for the installation site.

[0107] Reference Figure 6 As shown, based on the same inventive concept, another embodiment of this application also discloses a vapor deposition method applied to the vapor deposition equipment 100 in the above embodiment, which includes the following steps:

[0108] Step S10: Place the substrate 200 from the chamber inlet 11 onto the moving unit 20 inside the vapor deposition chamber 10.

[0109] Step S20: Drive the moving unit 20 using the driving unit. The moving unit 20 drives the substrate 200 to pass through each evaporation station 30 in sequence. The evaporation source 40 below each evaporation station 30 deposits the evaporation material onto the surface of the substrate 200 in sequence.

[0110] Step S30: Remove the vapor-deposited substrate 200 from the chamber outlet 12.

[0111] The vapor deposition method provided in this embodiment includes a transfer mechanism, multiple vapor deposition stations 30, and multiple evaporation sources 40 within a vapor deposition chamber 10. The multiple vapor deposition stations 30 are arranged within the vapor deposition chamber 10 and spaced apart along the transfer direction of the transfer mechanism. The evaporation sources 40 are located below the corresponding vapor deposition station 30. The transfer mechanism is used to transfer the substrate 200 from one vapor deposition station 30 to the next. The evaporation sources 40 are used to sequentially vapor-deposit material onto the surface of the substrate 200 as it passes through the corresponding vapor deposition station 30, thereby significantly improving vapor deposition efficiency, reducing material waste, and increasing production efficiency.

[0112] Reference Figure 2 As shown, in one embodiment, the evaporation source 40 includes a crucible 41, a heating device 42, and a nozzle 43. The crucible 41 holds the vapor deposition material; the heating device 42 heats the crucible 41, causing the vapor deposition material inside the crucible 41 to evaporate; the nozzle 43 is connected to the crucible 41 and is used to deposit the heated and evaporated material vapor onto the surface of the substrate 200; the crucible 41 in each evaporation source 40 holds the same or different vapor deposition materials. In step S20, the evaporation sources 40 below each vapor deposition station 30 sequentially vapor-deposit the vapor deposition material onto the surface of the substrate 200, including:

[0113] The evaporation sources 40 below each evaporation station 30 sequentially deposit the same or different evaporation materials onto the surface of the substrate 200. This helps to improve the evaporation efficiency.

[0114] Preferably, in step S20, the driving unit drives the moving unit 20, and the moving unit 20 drives the substrate 200 to pass through each evaporation station 30 in sequence. The evaporation source 40 below each evaporation station 30 sequentially deposits the evaporation material onto the surface of the substrate 200, including:

[0115] The nozzles 43 in each evaporation source 40 remain stationary relative to the evaporation chamber 10. The moving unit 20 is driven by the driving unit. As the moving unit 200 moves the substrate 200 past each evaporation source 40 in sequence, each evaporation source 40 deposits the evaporation material onto the surface of the substrate 200 in sequence. This allows the substrate 200 to remain in a state of constant circulation within the evaporation chamber 10, thereby improving the evaporation efficiency.

[0116] Furthermore, the substrates 200 can be closely arranged along the transport direction on the moving unit 20, reducing the gap between adjacent substrates 200 and thus reducing the waste of vapor deposition material. During vapor deposition, two substrates 200 will appear on the same vapor deposition station 30, with the rear half of the first substrate 200 and the front half of the second substrate 200 simultaneously located at the same vapor deposition station 30, thereby significantly improving vapor deposition efficiency and reducing material waste.

[0117] Reference Figure 3As shown, in one embodiment, the vapor deposition apparatus 100 further includes an alignment and bonding chamber 50, which is disposed on one side of the chamber inlet 11; before placing the substrate 200 from the chamber inlet 11 onto the moving unit 20 within the vapor deposition chamber 10, the following steps are also included:

[0118] S01. The substrate 200 and the mask 300 are aligned and bonded using the alignment and bonding chamber 50. The alignment and bonding chamber 50 allows for rapid alignment and bonding of the substrate 200 and the mask 300, thereby improving the evaporation efficiency.

[0119] Although this application has been described in conjunction with specific embodiments thereof, many substitutions, modifications and variations of these embodiments will be apparent to those skilled in the art from the foregoing description.

[0120] It should be noted that the above description describes some embodiments of this application. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be performed in a different order than that shown in the above embodiments and still achieve the desired result. Furthermore, the processes depicted in the drawings do not necessarily require a specific or sequential order to achieve the desired result. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0121] The embodiments of this application are intended to cover all such substitutions, modifications, and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the embodiments of this application should be included within the protection scope of this application.

Claims

1. A vapor deposition apparatus for vapor deposition on a substrate, characterized in that, include: A vapor deposition chamber, the vapor deposition chamber including a chamber inlet and a chamber outlet; A transfer mechanism is at least partially disposed within the vapor deposition chamber. The transfer mechanism includes a moving unit and a driving unit. The moving unit is continuously disposed between the chamber inlet and the chamber outlet. The driving unit is connected to the moving unit and drives the moving unit to move from the chamber inlet to the chamber outlet. The moving unit is used to carry the substrate and transfer the substrate from the chamber inlet to the chamber outlet. Multiple vapor deposition stations are arranged in the vapor deposition chamber and spaced apart along the transmission direction of the transmission mechanism. Multiple evaporation sources are provided, each positioned below a corresponding vapor deposition station. A transfer mechanism is used to transfer the substrate from one vapor deposition station to the next. The evaporation sources are used to sequentially deposit vapor deposition materials onto the surface of the substrate as it passes through the corresponding vapor deposition station.

2. The vapor deposition equipment according to claim 1, characterized in that, The evaporation source includes: A crucible containing the vapor-deposited material; A heating device is used to heat the crucible so that the vapor deposition material inside the crucible is heated and evaporated. A nozzle, which is connected to the crucible, is used to deposit heated and evaporated material vapor onto the surface of the substrate.

3. The vapor deposition equipment according to claim 2, characterized in that, During the vapor deposition process, the number of substrates in the vapor deposition chamber is greater than the number of crucibles. Some of the substrates in the vapor deposition chamber are located at the vapor deposition station, and some are located on the moving unit between two adjacent vapor deposition stations.

4. The vapor deposition equipment according to claim 2, characterized in that, Each of the evaporation sources contains the same or different vapor deposition materials in its crucible, and the multiple evaporation sources sequentially vapor deposit the same or different vapor deposition materials onto the substrate surface.

5. The vapor deposition equipment according to claim 1, characterized in that, The vapor deposition equipment also includes an alignment and bonding chamber, which is located on one side of the chamber entrance. The alignment and bonding chamber is used to align and bond the substrate with the mask before the substrate enters the vapor deposition chamber. The mask plate includes a frame and a mask body, the mask body is disposed on the frame, the moving unit contacts the frame and supports the frame, and the substrate is located on the side of the mask body away from the moving unit.

6. The vapor deposition equipment according to claim 5, characterized in that, The moving unit includes a first conveyor belt and a second conveyor belt, which are spaced apart and are used to abut against the bottom of the frame and support the frame.

7. The vapor deposition equipment according to claim 6, characterized in that, The first conveyor belt includes a first straight segment, a first arc segment, and a second straight segment, which are connected in sequence; the second conveyor belt includes a third straight segment, a second arc segment, and a fourth straight segment, which are connected in sequence. The first straight segment and the third straight segment are parallel and spaced apart, and the first straight segment and the third straight segment cooperate to support the frame; the second straight segment and the fourth straight segment are parallel and spaced apart, and the second straight segment and the fourth straight segment cooperate to support the frame; the first arc segment and the second arc segment are parallel and spaced apart.

8. A vapor deposition method, applied to the vapor deposition equipment as described in any one of claims 1-7, characterized in that, include: The substrate is placed on the moving unit inside the vapor deposition chamber from the chamber inlet; The driving unit drives the moving unit, and the moving unit drives the substrate to pass through each of the evaporation stations in sequence. The evaporation source below each of the evaporation stations deposits the evaporation material onto the surface of the substrate in sequence. The vapor-deposited substrate is removed from the chamber outlet.

9. The vapor deposition method according to claim 8, characterized in that, The evaporation source includes a crucible, a heating device, and a nozzle. The crucible holds the vapor deposition material. The heating device heats the crucible to cause the vapor deposition material inside to evaporate. The nozzle is connected to the crucible and is used to deposit the heated and evaporated material vapor onto the surface of the substrate. Each crucible in the evaporation source holds the same or different vapor deposition materials. The evaporation sources below each of the aforementioned evaporation stations sequentially deposit evaporation materials onto the substrate surface, including: The evaporation sources below each of the aforementioned evaporation stations sequentially deposit the same or different evaporation materials onto the surface of the substrate; Preferably, the driving unit drives the moving unit, and the moving unit moves the substrate sequentially through each of the evaporation stations. The evaporation source below each of the evaporation stations sequentially deposits evaporation material onto the surface of the substrate, including: The nozzles in each of the evaporation sources remain stationary relative to the vapor deposition chamber. The moving unit is driven by the driving unit, and as the moving unit moves the substrate past each of the evaporation sources in sequence, each of the evaporation sources deposits vapor deposition material onto the surface of the substrate in sequence.

10. The vapor deposition method according to claim 8, characterized in that, The vapor deposition equipment further includes an alignment and bonding chamber, which is disposed on one side of the chamber inlet; prior to placing the substrate from the chamber inlet onto the moving unit within the vapor deposition chamber, the process further includes: The substrate and the mask are aligned and bonded using the alignment and bonding chamber.

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