Graphite frame component and PECVD coating equipment

Abstract

The utility model discloses a graphite frame component and PECVD (Plasma Enhanced Chemical Vapor Deposition) coating equipment. The graphite frame component comprises a graphite frame and blocking pieces, the graphite frame is provided with a plurality of placing stations used for placing silicon wafers, the placing stations are provided with hollow areas, the blocking pieces are connected to the placing stations respectively, and the positions of the blocking pieces correspond to the positions of auxiliary grid lines on the back faces of the silicon wafers placed on the placing stations. The blocking piece is used for blocking the auxiliary grid lines on the back face of the silicon wafer from being deposited with passive film layers. According to the invention, deposition of the silicon nitride film in the corresponding area of the auxiliary grid line can be blocked by arranging the blocking member, so that the conductive slurry does not need to etch through the passivation film layer; therefore, the sintering temperature of the conductive paste in the auxiliary grid line area and the defect state density formed in the solar cell silicon substrate in the process that the silicon nitride film is etched through by the frit caused by high-temperature sintering can be reduced, and further the open-circuit voltage and the conversion efficiency of the solar cell are improved.

Description

Technical Field

[0001] The utility model relates to the technical field of photovoltaics, in particular to a graphite frame component and PECVD coating equipment. Background Art

[0002] In photovoltaic technology, PERC (Passivated Emitter and Rear Cell) technology is to add a passivation layer such as aluminum oxide or silicon oxide layer on the back of the silicon wafer to passivate the silicon wafer. In order to prevent the passivation layer from being damaged and affecting the passivation effect, a layer of silicon nitride is also plated on the outside of the passivation layer. The back passivation introduced in PERC technology can reduce the recombination rate of the carriers on the back surface of the battery to below 50cm / s and the surface dangling bonds to 10 11 eV•cm 2 The following can improve the recombination on the back side of the cell and increase the minority carrier life of the cell. In addition, the back-layered passivation film of the PERC cell acts as a back reflector, which can reflect more long-wavelength light back to the cell, thereby improving the long-wave response of the cell. However, since the back passivation layer of the PERC cell is an insulating layer, it cannot form an electrode path with the aluminum back field. Therefore, it is necessary to use a laser to groove the back of the silicon wafer to form a local back surface field of the PERC cell. In traditional technology, the glass material in the conductive paste will inevitably form a recombination defect of photogenerated carriers in the silicon matrix of the solar cell during the process of etching through the passivation film at high temperature, thereby reducing the open circuit voltage and conversion efficiency of the solar cell. Utility Model Content

[0003] Based on this, it is necessary to provide a graphite frame component. The graphite frame component of the utility model can reduce the damage of the laser to the silicon wafer substrate during the laser grooving process in the PERC cell preparation process.

[0004] An embodiment of the present application provides a graphite frame component.

[0005] A graphite frame component comprises a graphite frame and a blocking member, wherein the graphite frame has a plurality of placement stations for placing silicon wafers, the placement stations have a hollow area, each of the placement stations is respectively connected to the blocking member, the position of the blocking member corresponds to the position of the secondary gate line on the back side of the silicon wafer placed on the placement station, and the blocking member is used to prevent the secondary gate line on the back side of the silicon wafer from being deposited with a passivation film layer.

[0006] In some of the embodiments, the plurality of placement stations on the graphite frame are spaced apart.

[0007] In some embodiments, the plurality of placement stations on the graphite frame are sequentially and spaced apart along a first direction and a second direction, with at least two placement stations spaced apart in the first direction and at least two placement stations spaced apart in the second direction.

[0008] In some embodiments, the first direction is perpendicular to the second direction.

[0009] In some of the embodiments, the barrier has high temperature resistance, and the barrier can withstand a temperature of 1000°C to 1500°C.

[0010] In some embodiments, the blocking member is linear.

[0011] In some embodiments, the number of the blocking members connected to each of the placement stations is multiple, and the multiple blocking members connected to each of the placement stations are distributed at intervals.

[0012] In some embodiments, the spacing between adjacent blocking members is 2 mm to 20 mm.

[0013] In some embodiments, the size of the hollow area is smaller than the size of the silicon wafer, and the length and width of the hollow area are respectively smaller than the length and width of the silicon wafer by at least 1 mm.

[0014] An embodiment of the present application also provides a PECVD coating device.

[0015] A PECVD coating device comprises a conveying component, a loading chamber, a heating chamber, a reaction chamber, a cooling chamber, a loading chamber and a graphite frame component, wherein the loading chamber, the heating chamber, the reaction chamber, the cooling chamber and the loading chamber are connected in sequence, and adjacent chambers among the loading chamber, the heating chamber, the reaction chamber, the cooling chamber and the loading chamber are connected through valves respectively, and the conveying component can convey samples and the graphite frame component in the order of the loading chamber, the heating chamber, the reaction chamber, the cooling chamber and the loading chamber.

[0016] The above-mentioned graphite frame component uses a high temperature resistant material in the hollow area on the graphite frame placement station to block part of the back laser grooving position, blocking the deposition of the silicon nitride film layer in the secondary grid line area, thereby achieving no laser grooving or low-power laser grooving, reducing or avoiding laser damage to the silicon substrate, improving minority carrier lifetime, increasing open circuit voltage, and improving battery efficiency. Specifically, the present application uses a high temperature resistant material to make a blocking member such as a thin wire in the hollow area of ​​the back film graphite frame, and the blocking member matches the position of the back secondary grid line, thereby blocking the deposition of silicon nitride on the corresponding area of ​​the secondary grid line, reducing the sintering temperature of the conductive paste in the secondary grid line area and the defect state density formed in the silicon substrate of the solar cell during the process of glass material etching the silicon nitride film due to high temperature sintering. Therefore, the technical solution of the present application can improve the open circuit voltage and conversion efficiency of the solar cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application, and those skilled in the art can obtain other drawings based on these drawings without creative work.

[0018] In order to more completely understand the present application and its beneficial effects, the following description will be made in conjunction with the accompanying drawings. In the following description, the same reference numerals represent the same parts.

[0019] FIG1 is a schematic diagram of a graphite frame component according to an embodiment of the present utility model;

[0020] FIG. 2 is a schematic diagram of a partial structure of a graphite frame component according to an embodiment of the present invention.

[0021] Description of Reference Numerals

[0022] 10. Graphite frame component; 100. Graphite frame; 101. Hollow area; 200. Blocking member. DETAILED DESCRIPTION

[0023] In order to make the above-mentioned purposes, features and advantages of the utility model more obvious and easy to understand, the specific implementation methods of the utility model are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the utility model. However, the utility model can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the utility model, so the utility model is not limited by the specific embodiments disclosed below.

[0024] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0025] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0026] In the present utility model, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0027] In the description of the present utility model, "several" means more than one, "many" means more than two, "greater than", "less than", "exceed" etc. are understood to exclude the number itself, and "above", "below", "within" etc. are understood to include the number itself. If there is a description of "first" or "second", it is only used to distinguish the technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0028] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art in the technical field of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0029] The embodiment of the present application provides a graphite frame component 10 to solve the problem that when laser grooves are formed on the back of a silicon wafer in the conventional technology, the laser grooves are easily damaged by the silicon substrate, thus affecting the contact performance. The graphite frame component 10 will be described below in conjunction with the accompanying drawings.

[0030] The graphite frame component 10 provided in the embodiment of the present application is exemplarily shown in FIG1 , which is a schematic diagram of the structure of the graphite frame component 10 provided in the embodiment of the present application. The blocking member 200 in the graphite frame component 10 of the present application can block the deposition of the silicon nitride film in the area corresponding to the auxiliary grid line, so that the conductive paste does not need to etch through the passivation film layer, thereby reducing the sintering temperature of the conductive paste in the auxiliary grid line area and the defect state density formed in the silicon substrate of the solar cell during the process of the glass material etching through the silicon nitride film caused by high-temperature sintering, thereby improving the open circuit voltage and conversion efficiency of the solar cell.

[0031] In order to more clearly illustrate the structure of the graphite frame component 10, the graphite frame component 10 will be introduced below in conjunction with the accompanying drawings. For example, please refer to Figure 1, which is a schematic diagram of the structure of the graphite frame component 10 provided in an embodiment of the present application.

[0032] A graphite frame component 10 includes a graphite frame 100 and a blocking member 200. The graphite frame 100 has a plurality of placement stations for placing silicon wafers. The placement stations have a hollow area 101. Blocking members 200 are connected to each placement station. The position of the blocking member 200 corresponds to the position of the secondary gate line on the back of the silicon wafer placed on the placement station. The blocking member 200 is used to prevent the secondary gate line on the back of the silicon wafer from being deposited with a passivation film layer, for example, the passivation film layer can be a silicon nitride film.

[0033] The above-mentioned graphite frame component 10 uses a high-temperature resistant material to block the area corresponding to the secondary grid line in the hollow area 101 on the graphite frame 100 placement station, so that the silicon nitride film is not deposited or deposited in small amounts on the secondary grid line position on the back of the silicon wafer. Specifically, the present application uses a high-temperature resistant material to make a blocking member 200 such as a thin wire in the hollow area of ​​the back film graphite frame 100. The blocking member 200 matches the position of the secondary grid line on the back, thereby blocking the deposition of silicon nitride on the corresponding area of ​​the secondary grid line, thereby reducing the sintering temperature of the conductive paste in the secondary grid line area and the defect state density formed in the silicon substrate of the solar cell during the process of glass material etching through the silicon nitride film caused by high-temperature sintering. Therefore, the technical solution of the present application can improve the open circuit voltage and conversion efficiency of the solar cell.

[0034] In some of the embodiments, the plurality of placement stations on the graphite frame 100 are distributed at intervals.

[0035] In some embodiments, a plurality of placement stations on the graphite frame 100 are sequentially and spaced apart along the first direction and the second direction. At least two placement stations are spaced apart in the first direction, and at least two placement stations are spaced apart in the second direction.

[0036] In some of these embodiments, the first direction is perpendicular to the second direction.

[0037] In some embodiments, the blocking member 200 has high temperature resistance, and the blocking member 200 can withstand a temperature of 1000° C. to 1500° C.

[0038] In some embodiments, as shown in Fig. 2, which is a partial structural diagram of a graphite frame component 10 according to an embodiment of the present invention, the blocking member 200 is in a linear or sheet shape. For example, the blocking member 200 can be a thin line or a thin sheet.

[0039] In some of the embodiments, there are multiple blocking members 200 connected to each placement station, and the multiple blocking members 200 connected to each placement station are distributed at intervals.

[0040] In some embodiments, the spacing between adjacent blocking members 200 is 2 mm to 20 mm. The spacing between adjacent blocking members 200 can be set according to actual needs. It should be noted that in the present application, when it comes to numerical intervals (i.e., numerical ranges), unless otherwise specified, the distribution of optional numerical values ​​in the numerical interval is considered continuous and includes the two numerical endpoints (i.e., the minimum value and the maximum value) of the numerical interval, and each numerical value between the two numerical endpoints. Unless otherwise specified, when the numerical interval only refers to integers in the numerical interval, it includes the two endpoint integers of the numerical range, and each integer between the two endpoints, which is equivalent to directly listing each integer. When multiple numerical ranges are provided to describe features or characteristics, these numerical ranges can be merged. In other words, unless otherwise specified, the numerical ranges disclosed in the present application should be understood to include any and all sub-ranges included therein. The "numerical value" in the numerical interval can be any quantitative value, such as a number, a percentage, a ratio, etc. "Numerical interval" allows for a broad range of quantitative intervals such as percentage intervals, ratio intervals, and ratio intervals.

[0041] In some embodiments, the size of the hollow area 101 is smaller than the size of the silicon wafer, and the length and width of the hollow area 101 are respectively smaller than the length and width of the silicon wafer by at least 1 mm. For example, the silicon wafer is rectangular, the hollow area 101 is rectangular, and the size of the hollow area 101 is slightly smaller than the size of the silicon wafer by about 1 mm. By filling the blocking member 200 such as a thin wire, the support can be replaced by the card point, thereby reducing the chip drop rate and improving the straight-through rate.

[0042] An embodiment of the present application also provides a PECVD coating device.

[0043] A PECVD coating device includes a conveying component, a loading chamber, a heating chamber, a reaction chamber, a cooling chamber, a loading chamber and a graphite frame component 10. The loading chamber, the heating chamber, the reaction chamber, the cooling chamber and the loading chamber are connected in sequence. The adjacent chambers between the loading chamber, the heating chamber, the reaction chamber, the cooling chamber and the loading chamber are connected through valves. The conveying component can convey the sample and the graphite frame component 10 in the order of the loading chamber, the heating chamber, the reaction chamber, the cooling chamber and the loading chamber. The PECVD coating device is not shown in Figures 1 and 2.

[0044] In some of the embodiments, the PECVD coating equipment may be a plate-type PECVD plate-type PECVD coating equipment, and the PECVD coating equipment can be used for PERC cell preparation.

[0045] In the present application, a blocking member 200 such as a thin wire or a thin sheet is made of a high-temperature resistant material in the hollow area 101 of the back film graphite frame 100. The blocking member 200 matches the position of the back auxiliary grid line. The blocking member 200 can block the deposition of the silicon nitride film in the corresponding area of ​​the auxiliary grid line, so that the conductive paste does not need to etch through the passivation film layer. Therefore, the sintering temperature of the conductive paste in the auxiliary grid line area and the defect state density formed in the silicon substrate of the solar cell during the process of the glass material etching through the silicon nitride film due to high-temperature sintering can be reduced, thereby improving the open circuit voltage and conversion efficiency of the solar cell.

[0046] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0047] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0048] The above-mentioned embodiments only express several implementation methods of the utility model, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the patent of the utility model. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the utility model, and these all belong to the protection scope of the utility model. Therefore, the protection scope of the utility model patent shall be based on the attached claims.

Claims

1. A graphite frame component (10), characterized in that: The invention comprises a graphite frame (100) and a blocking member (200), wherein the graphite frame (100) has a plurality of placement stations for placing silicon wafers, the placement stations have hollow areas (101), each of the placement stations is connected to the blocking member (200), the position of the blocking member (200) corresponds to the position of the secondary gate line on the back side of the silicon wafer placed on the placement station, and the blocking member (200) is used to block the secondary gate line on the back side of the silicon wafer from being deposited with a passivation film layer.

2. The graphite frame component (10) according to claim 1, characterized in that: The plurality of placement stations on the graphite frame (100) are distributed at intervals.

3. The graphite frame component (10) according to claim 1, characterized in that: The plurality of placement stations on the graphite frame (100) are sequentially and spaced apart along a first direction and a second direction, with at least two placement stations spaced apart in the first direction and at least two placement stations spaced apart in the second direction.

4. The graphite frame component (10) according to claim 3, characterized in that: The first direction is perpendicular to the second direction.

5. The graphite frame component (10) according to claim 1, characterized in that: The blocking member (200) has high temperature resistance, and the blocking member (200) can withstand a temperature of 1000°C to 1500°C.

6. The graphite frame component (10) according to any one of claims 1 to 5, characterized in that: The blocking member (200) is linear.

7. The graphite frame component (10) according to any one of claims 1 to 5, characterized in that: The number of the blocking members (200) connected to each of the placement stations is multiple, and the multiple blocking members (200) connected to each of the placement stations are distributed at intervals.

8. The graphite frame component (10) according to claim 7, characterized in that: The distance between adjacent blocking members (200) is 2 mm to 20 mm.

9. The graphite frame component (10) according to any one of claims 1 to 5 and 8, characterized in that: The size of the hollow area (101) is smaller than the size of the silicon wafer, and the length and width of the hollow area (101) are respectively smaller than the length and width of the silicon wafer by at least 1 mm.

10. A PECVD coating device, characterized in that: The invention comprises a conveying component, a loading chamber, a heating chamber, a reaction chamber, a cooling chamber, a loading chamber and a graphite frame component (10) according to any one of claims 1 to 9, wherein the loading chamber, the heating chamber, the reaction chamber, the cooling chamber and the loading chamber are connected in sequence, and adjacent chambers among the loading chamber, the heating chamber, the reaction chamber, the cooling chamber and the loading chamber are connected through valves respectively, and the conveying component can convey the sample and the graphite frame component (10) in the order of the loading chamber, the heating chamber, the reaction chamber, the cooling chamber and the loading chamber.

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