Atomic layer deposition system

Abstract

The atomic layer deposition system comprises a carrier, a preheating cavity, a process cavity, a cooling cavity, a conveying cavity, a conveying device and a control device, the carrier is provided with an inner cavity with the upper portion, the lower portion, the front portion, the rear portion and the left portion closed, and the carrier is used for supporting a plurality of vertical substrates; the preheating cavity, the process cavity and the cooling cavity are arranged around the conveying cavity; the conveying device is located in the conveying cavity, the conveying device comprises a rotating mechanism and a linear reciprocating motion mechanism which are in communication connection with the control device, and the conveying device is used for conveying a carrier with a substrate among the preheating cavity, the process cavity and the cooling cavity by using the conveying cavity as a middle transition cavity; the rotating mechanism is used for enabling the conveying device to convey and rotate the carrier with the substrate to the butt joint direction between the conveying cavity and the preheating cavity, the process cavity or the cooling cavity; the linear reciprocating motion mechanism is used for conveying a carrier with a substrate between the conveying cavity and the preheating cavity, the process cavity or the cooling cavity through linear reciprocating motion after the rotating mechanism rotates to the corresponding butt joint direction.

Description

Technical Field

[0001] The present disclosure relates to the technical field of atomic layer deposition, and more particularly to an atomic layer deposition system. Background Art

[0002] Atomic layer deposition (ALD) is a thin film deposition technology based on self-limiting reactions, which can precisely control the thickness and composition of thin films at the nanometer level. It is widely used in electronics, optics, catalysis, display panels, new energy and other fields. However, the existing atomic layer deposition equipment has many problems in production efficiency, process utilization and other aspects. Therefore, the development of a new type of atomic layer deposition equipment has important practical significance. In traditional equipment, the transfer of substrates to the process chamber is mainly achieved by a robotic arm, or a limit guide rail is used for directional transfer. For factory mass production, production efficiency seriously hinders the use of equipment.

[0003] In order to solve the problem of production efficiency, there are already multi-chip production equipment that sets up preheating chambers and cooling chambers in a single row before and after the process, such as Figure 1 As shown, this method can generally only prepare a single film layer, or when preparing multi-layer films, the production efficiency is greatly reduced, so this traditional equipment cannot adapt to diverse process requirements. Therefore, based on market demand, especially the demand for multi-layer films, it is necessary to improve the atomic layer deposition equipment to efficiently perform multi-layer deposition. Utility Model Content

[0004] In view of the problems existing in the background technology, an object of the present disclosure is to provide an atomic layer deposition system, which can improve the transfer efficiency of the coated substrate.

[0005] Another object of the present disclosure is to provide an atomic layer deposition system that can improve the flexibility and freedom of substrate transportation.

[0006] Yet another object of the present disclosure is to provide an atomic layer deposition system that can be suitable for the preparation of multilayer films when multilayer film preparation is required.

[0007] Another object of the present disclosure is to provide an atomic layer deposition system that can improve production efficiency.

[0008] Thus, an atomic layer deposition system is provided, which includes a carrier, a preheating chamber, a process chamber, a cooling chamber, a transfer chamber, a transfer device, and a control device. The carrier has an inner cavity that is open at the top and bottom and closed front, back, left and right. The carrier is used to suspend and support multiple upright and spaced-apart substrates in the inner cavity; the preheating chamber, the process chamber and the cooling chamber are arranged around the transfer chamber; the transfer device is located in the transfer chamber, and the transfer device includes a rotating mechanism and a linear reciprocating motion mechanism that are communicatively connected to the control device. The transfer device is used to transfer the carrier with the substrate between the preheating chamber, the process chamber and the cooling chamber by using the transfer chamber as an intermediate transition chamber. The rotating mechanism is used to rotate the transfer device to transfer the carrier with the substrate to the direction of docking between the transfer chamber and the preheating chamber, the process chamber or the cooling chamber. The linear reciprocating motion mechanism is used to transfer the carrier with the substrate between the transfer chamber and the preheating chamber, the process chamber or the cooling chamber by linear reciprocating motion after the rotating mechanism rotates to the corresponding docking direction.

[0009] The beneficial effects of the present disclosure are as follows:

[0010] In the atomic layer deposition system according to the present invention, the preheating chamber, process chamber and cooling chamber are arranged around the transfer chamber, the transfer device is located in the transfer chamber, and the setting of the rotating mechanism and the linear reciprocating motion mechanism of the transfer device can realize the transfer of the carrier with the substrate between the surrounding preheating chambers, process chambers and cooling chambers at 360 degrees. This has higher transfer efficiency and better transfer flexibility and freedom than the background technology of preheating chambers, process chambers and cooling chambers in a single row.

[0011] In the atomic layer deposition system according to the present disclosure, the preheating chamber, the process chamber and the cooling chamber are arranged around the transfer chamber, the transfer device is located in the transfer chamber, and the rotating mechanism and the linear reciprocating motion mechanism of the transfer device are arranged. When multilayer film preparation is required, only the number of process chambers needs to be increased, thereby being suitable for the preparation of multilayer films.

[0012] In addition, in the atomic layer deposition system according to the present disclosure, the preheating chamber, the process chamber, and the cooling chamber can coordinate to fully utilize the movement of the conveyor, thereby greatly improving production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is a schematic diagram of the currently available atomic layer deposition system.

[0014] Figure 2 is a schematic diagram of an example of an atomic layer deposition system according to the present disclosure.

[0015] Figure 3 is a schematic diagram of another example of an atomic layer deposition system according to the present disclosure.

[0016] Figure 4 is a schematic diagram of yet another example of an atomic layer deposition system according to the present disclosure.

[0017] Figure 5 is a perspective view of a carrier of an atomic layer deposition system according to the present disclosure, wherein a substrate is shown.

[0018] Figure 6 is a perspective view of a conveyor device of an atomic layer deposition system according to the present disclosure.

[0019] Figure 7 is a three-dimensional diagram of a roller transmission mechanism and a carrier of an atomic layer deposition system according to the present disclosure.

[0020] Figure 8 yes Figure 7 A top view of the vehicle, wherein the carrier is not shown.

[0021] The reference numerals are described as follows:

[0022] 100 Atomic Layer Deposition System 6 Conveyor

[0023] 1 carrier 61 rotating mechanism

[0024] 11 cavity 611 angle sensor

[0025] 12 side wall 62 linear reciprocating motion mechanism

[0026] 2 Preheating chamber 63 Carrying platform

[0027] 21 Preheating sub-chamber 7 control device

[0028] 3 process chambers 8 roller transmission mechanism

[0029] 4 Cooling chamber 81 horizontal roller

[0030] 41 cooling chamber 82 vertical roller

[0031] 5 conveying chamber 83 long roller

[0032] 200 substrates DETAILED DESCRIPTION

[0033] The accompanying drawings show embodiments of the present disclosure, and it will be understood that the disclosed embodiments are merely examples of the present disclosure, and the present disclosure can be implemented in various forms. Therefore, the specific details disclosed herein should not be interpreted as limiting, but merely as the basis for the claims and as a representative basis for teaching ordinary technicians in the field to implement the present disclosure in various ways.

[0034] Reference Figures 2 to 8According to the present disclosure, the atomic layer deposition system 100 includes a carrier 1, a preheating chamber 2, a process chamber 3, a cooling chamber 4, a transfer chamber 5, a transfer device 6, and a control device 7.

[0035] The carrier 1 has an inner cavity 11 which is open at the top and bottom and closed at the front, back, left and right. The carrier 1 is used to suspend and support multiple substrates 200 standing and spaced from each other in the inner cavity 11. The preheating chamber 2, the process chamber 3 and the cooling chamber 4 are arranged around the transfer chamber 5. The conveying device 6 is located in the transfer chamber 5. The conveying device 6 includes a rotating mechanism 61 and a linear reciprocating motion mechanism 62 which are connected to the control device 7 in communication. The conveying device 6 is used to transfer the carrier 1 with the substrate 200 between the preheating chamber 2, the process chamber 3 and the cooling chamber 4 by using the transfer chamber 5 as an intermediate transition chamber. The rotating mechanism 61 is used to rotate the conveying device 6 to the direction of docking between the transfer chamber 5 and the preheating chamber 2, the process chamber 3 or the cooling chamber 4. The linear reciprocating motion mechanism 62 is used to transfer the carrier 1 with the substrate 200 between the transfer chamber 5 and the preheating chamber 2, the process chamber 3 or the cooling chamber 4 through linear reciprocating motion after the rotating mechanism 61 rotates to the corresponding docking direction.

[0036] In the atomic layer deposition system 100 according to the present disclosure, the preheating chamber 2, the process chamber 3 and the cooling chamber 4 are arranged around the transfer chamber 5, and the transfer device 6 is located in the transfer chamber 5. The setting of the rotating mechanism 61 and the linear reciprocating motion mechanism 62 of the transfer device 6 can realize the transfer of the carrier 1 with the substrate 200 between the surrounding preheating chambers 2, process chambers 3 and cooling chambers 4 at 360 degrees. This has higher transfer efficiency, better transfer flexibility and freedom than the background technology of the preheating chambers, process chambers and cooling chambers in a single row.

[0037] In the atomic layer deposition system 100 according to the present disclosure, the preheating chamber 2, the process chamber 3 and the cooling chamber 4 are arranged around the transfer chamber 5, and the transfer device 6 is located in the transfer chamber 5. The setting of the rotating mechanism 61 and the linear reciprocating motion mechanism 62 of the transfer device 6 can increase the number of process chambers 3 when multilayer film preparation is required, thereby being suitable for the preparation of multilayer films.

[0038] In addition, in the atomic layer deposition system 100 according to the present disclosure, the preheating chamber 2, the process chamber 3 and the cooling chamber 4 can coordinate to fully utilize the movement of the conveying device 6, thereby greatly improving the production efficiency.

[0039] In addition, compared with the single-row preheating chamber, process chamber and cooling chamber in the background technology, while doubling the production capacity, at the same production efficiency, the preheating chamber 2, process chamber 3 and cooling chamber 4 are arranged around the transfer chamber 5 and occupy less space.

[0040] In one example, the carrier 1 is provided with a plurality of support bars (not shown), which are disposed in the process chamber 11 and are used to support the standing substrate 200 from below and both sides around the circumference of the standing substrate 200 .

[0041] like Figures 2 to 4 As shown, the preheating chamber 2 and the cooling chamber 4 are located on opposite sides of the transfer chamber 5 and in a straight line; the process chamber 3 is located on the lateral side of the transfer chamber 5 intersecting the straight line and between the preheating chamber 2 and the cooling chamber 4. Figure 4 As shown, the process chambers 3 are distributed on both sides of the transfer chamber 5 that intersect the straight line, thereby increasing the number of process chambers 3, so that multilayer film preparation can be performed. The process chamber 3 located on one side of the transfer chamber 5 that intersects the straight line can be one ( Figure 2 ), or multiple ( Figure 3 and Figure 4 ), can be flexibly set according to the actual situation of coating.

[0042] like Figure 3 and Figure 4 As shown, in one example, the preheating chamber 2 is composed of a plurality of preheating sub-chambers 21 connected together in a straight line. Each preheating sub-chamber 21 can process different rounds of substrates 200 to improve the working efficiency. The specific number of preheating sub-chambers 21 can be flexibly determined.

[0043] like Figure 3 and Figure 4 As shown, in one example, the cooling chamber 4 is composed of a plurality of cooling sub-chambers 41 connected together in a straight line. Similarly, each cooling sub-chamber 41 can operate different rounds of substrates 200, thereby improving the operation efficiency. The specific number of cooling sub-chambers 41 can be flexibly determined.

[0044] The rotating mechanism 61 may be provided with an angle sensor 611, and the angle sensor 611 is used to set and monitor the rotation angle of the rotating mechanism 61. For example, the rotating mechanism 61 is a motor. The linear reciprocating motion mechanism 62 is a screw nut motion mechanism or a stepping motor.

[0045] like Figure 5-8As shown, in one example, the rotating mechanism 61 is installed on the linear reciprocating motion mechanism 62; the conveying device 6 also includes a carrier 63, and the atomic layer deposition system 100 also includes a roller transmission mechanism 8 located in each of the preheating chamber 2, the process chamber 3, the cooling chamber 4, and the conveying chamber 5, the roller transmission mechanism 8 includes a plurality of horizontal rollers 81 and a plurality of vertical rollers 82, the axis of the horizontal roller 81 is horizontal, the axis of the vertical roller 82 is vertical, the highest generatrix of the plurality of horizontal rollers 81 is coplanar, the plurality of horizontal rollers 81 are arranged in two rows spaced apart, the plurality of vertical rollers 82 are arranged in two rows spaced apart, and the two rows of the vertical rollers 82 are arranged in parallel. Located outside the two rows of horizontal rollers 81, the generatrix of the vertical rollers 82 in each row closest to the vertical rollers 82 in the opposite row is coplanar, and the two rows of vertical rollers 82 are used to clamp and transport the carrier 1 with the substrate 200 from the opposite side walls 12 of the carrier 1 near the bottom; the two rows of horizontal rollers 81 are used to support the two side walls 12 from both sides of the bottom of the carrier 1 and transport the carrier 1 with the substrate 200; the supporting platform 63 is installed on the rotating mechanism 61, and the width of the supporting platform 63 is smaller than the interval between the two rows of horizontal rollers 81, and the upper surface of the supporting platform 63 is flush with the plane of the multiple horizontal rollers 81 that are coplanar with the highest generatrix.

[0046] like Figure 7 and Figure 8 As shown, each roller transmission mechanism 8 also includes two long rollers 83, which are respectively located outside the two ends of the two rows of vertical rollers 82 and the two rows of horizontal rollers 81, and the axial length of the two long rollers 83 is not less than the span of the two rows of vertical rollers 82.

[0047] The control device 7 is, for example but not limited to, a PLC platform.

[0048] The above detailed description is used to describe multiple exemplary embodiments, but this document is not intended to be limited to the explicitly disclosed combinations. Therefore, unless otherwise stated, the various features disclosed herein can be combined together to form multiple additional combinations that are not shown for the sake of simplicity.

Claims

1. An atomic layer deposition system, characterized in that: The atomic layer deposition system (100) comprises a carrier (1), a preheating chamber (2), a process chamber (3), a cooling chamber (4), a transfer chamber (5), a transfer device (6), and a control device (7). The carrier (1) has an inner cavity (11) which is open at the top and bottom and closed at the front, back, left and right. The carrier (1) is used to support a plurality of substrates (200) standing and spaced apart from each other in the air in the inner cavity (11); The preheating chamber (2), the process chamber (3) and the cooling chamber (4) are arranged around the transfer chamber (5); The conveying device (6) is located in the conveying chamber (5), and comprises a rotating mechanism (61) and a linear reciprocating mechanism (62) which are connected to the control device (7) in communication. The conveying device (6) is used to convey a carrier (1) with a substrate (200) between a preheating chamber (2), a process chamber (3) and a cooling chamber (4) by using the conveying chamber (5) as an intermediate transition chamber. The rotating mechanism (61) is used to rotate the conveying device (6) to a direction of docking between the conveying chamber (5) and the preheating chamber (2), the process chamber (3) or the cooling chamber (4). The linear reciprocating mechanism (62) is used to convey the carrier (1) with the substrate (200) between the conveying chamber (5) and the preheating chamber (2), the process chamber (3) or the cooling chamber (4) through a linear reciprocating motion after the rotating mechanism (61) rotates to a corresponding docking direction.

2. The atomic layer deposition system according to claim 1, characterized in that The carrier (1) is provided with a plurality of support bars, which are arranged in the process inner cavity (11) and are used to surround the circumference of the standing substrate (200) and support the standing substrate (200) from below and both sides.

3. The atomic layer deposition system according to claim 1, characterized in that The preheating chamber (2) and the cooling chamber (4) are located on opposite sides of the transfer chamber (5) and are in a straight line; The process chamber (3) is located at a lateral side of the transfer chamber (5) intersecting the straight line and between the preheating chamber (2) and the cooling chamber (4).

4. The atomic layer deposition system according to claim 1, characterized in that The process chambers (3) are distributed on both lateral sides of the transfer chamber (5) intersecting the straight line.

5. The atomic layer deposition system according to claim 1, characterized in that The preheating chamber (2) is composed of a plurality of preheating sub-chambers (21) connected together and in a straight line.

6. The atomic layer deposition system according to claim 1, characterized in that The cooling chamber (4) is composed of a plurality of cooling sub-chambers (41) connected together and in a straight line.

7. The atomic layer deposition system according to claim 1, characterized in that The rotating mechanism (61) is mounted on the linear reciprocating motion mechanism (62); The conveying device (6) further comprises a carrying platform (63), The atomic layer deposition system (100) further comprises a roller transmission mechanism (8) located in each of the preheating chamber (2), the process chamber (3), the cooling chamber (4), and the transfer chamber (5). The roller transmission mechanism (8) comprises a plurality of horizontal rollers (81) and a plurality of vertical rollers (82). The axis of the horizontal roller (81) is horizontal, and the axis of the vertical roller (82) is vertical. The highest generatrixes of the plurality of horizontal rollers (81) are coplanar, A plurality of horizontal rollers (81) are arranged in two rows spaced apart from each other, and a plurality of vertical rollers (82) are arranged in two rows spaced apart from each other, wherein the two rows of vertical rollers (82) are located outside the two rows of horizontal rollers (81). The generatrix of the vertical rollers (82) in each row closest to the vertical rollers (82) in the opposite row is coplanar, Two rows of vertical rollers (82) are used to clamp and transfer the carrier (1) with the substrate (200) from the opposite side walls (12) of the carrier (1) near the bottom; Two rows of horizontal rollers (81) are used to support the two side walls (12) from both sides of the bottom of the carrier (1) and to transport the carrier (1) with the substrate (200); The support platform (63) is installed on the rotating mechanism (61), the width of the support platform (63) is smaller than the interval between two rows of horizontal rollers (81), and the upper surface of the support platform (63) is flush with the plane coplanar with the highest generatrix of the plurality of horizontal rollers (81).

8. The atomic layer deposition system according to claim 7, characterized in that: Each roller transmission mechanism (8) further comprises two long rollers (83), which are respectively located outside the two ends of the two rows of vertical rollers (82) and the two rows of horizontal rollers (81), and the axis length of the two long rollers (83) is not less than the span of the two rows of vertical rollers (82).

9. The atomic layer deposition system according to claim 7, characterized in that: The rotating mechanism (61) is provided with an angle sensor (611), and the angle sensor (611) is used to set and monitor the rotation angle of the rotating mechanism (61).

10. The atomic layer deposition system according to claim 9, characterized in that: The rotating mechanism (61) is a motor; The linear reciprocating motion mechanism (62) is a screw nut motion mechanism or a stepping motor; The control device (7) is a PLC platform.

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