LED light-emitting chip

Abstract

The utility model provides an LED light-emitting chip. The LED light-emitting chip comprises an epitaxial layer. Wherein the epitaxial layer comprises a first semiconductor layer, an active light-emitting layer and a second semiconductor layer which are stacked; the epitaxial layer has a plurality of light emitting regions. The LED light-emitting chip has ultra-low voltage, so that the photoelectric conversion efficiency of the LED light-emitting chip is effectively improved, the energy consumption of the whole machine is effectively reduced, and the battery life is prolonged.

Description

Technical Field

[0001] The utility model relates to the technical field of display, in particular to an LED light-emitting chip. Background Art

[0002] Light emitting diode (LED) is a semiconductor light-emitting device based on the principle of electroluminescence. Semiconductor lighting based on high-power LED is recognized as the third revolution in the history of lighting after incandescent lamps and fluorescent lamps. It has now been widely used in general lighting, entertainment lighting, agricultural lighting, sports lighting, commercial lighting, medical lighting and other fields.

[0003] However, as the requirements for energy efficiency of electronic products continue to increase, as a key light source component, the high energy consumption caused by the low photoelectric conversion efficiency of high-power LED chips can no longer meet the increasingly stringent energy consumption standards. Therefore, LED chips are facing an urgent need to improve their photoelectric conversion efficiency. Utility Model Content

[0004] The LED light-emitting chip provided in the present application is intended to solve the problems of low photoelectric conversion efficiency and high energy consumption existing in existing LED light-emitting chips.

[0005] In order to solve the above technical problems, a technical solution adopted in the present application is to provide an LED light-emitting chip, comprising:

[0006] The epitaxial layer comprises a first semiconductor layer, an active light-emitting layer and a second semiconductor layer which are stacked; the epitaxial layer has a plurality of light-emitting regions.

[0007] In a specific embodiment, the surface of the second semiconductor layer away from the first semiconductor layer has a first groove, so that the first semiconductor layer is partially exposed to form a first step surface; the LED light emitting chip further includes:

[0008] A first electrode, at least partially disposed on the first step surface;

[0009] A second electrode, at least partially disposed on a surface of the second semiconductor layer away from the first semiconductor layer;

[0010] Wherein, the first electrode and the second electrode both include a pad and a gold finger electrically connected to the pad.

[0011] In a specific embodiment, at least one of the first electrode and the second electrode includes a plurality of branches connected to the gold fingers.

[0012] In a specific embodiment, two opposite sides of the gold finger are connected to a plurality of the branches.

[0013] In a specific embodiment, the first electrode and the second electrode both include the gold finger and a plurality of branches connected to the gold finger.

[0014] In a specific embodiment, the first electrode includes a first pad and a first gold finger connected to the first pad;

[0015] The second electrode includes a second pad and a second gold finger connected to the second pad;

[0016] Wherein, the second golden finger connects a plurality of the branches.

[0017] In a specific embodiment, the first electrode includes a first gold finger and a plurality of first branches connected to the first gold finger;

[0018] The second electrode includes a second golden finger and a plurality of second branches connected to the second golden finger;

[0019] Among them, multiple first branches are arranged at intervals and connected to the side of the first gold finger close to the second gold finger, multiple second branches are arranged at intervals and connected to the side of the second gold finger close to the first gold finger, and multiple first branches and multiple second branches are alternately arranged along the extension direction of the first gold finger.

[0020] In a specific embodiment, along the extension direction of the first gold finger of the first electrode, projections of adjacent first branches of the first electrode and second branches of the second electrode partially overlap.

[0021] In a specific embodiment, the first electrode includes a first gold finger and a plurality of first branches connected to the first gold finger;

[0022] The first groove includes a main groove and a plurality of branch grooves connected to the main groove, the first gold finger is arranged in the main groove, and the plurality of first branches are arranged in the plurality of branch grooves in a one-to-one correspondence.

[0023] In a specific embodiment, the first electrode includes a first gold finger and a plurality of first branches connected to the first gold finger;

[0024] There are multiple first grooves, and the multiple first grooves are arranged at intervals along the extension direction of the first gold finger; the first groove includes a main groove and a branch groove connected to the main groove;

[0025] The LED light-emitting chip also includes a first insulating layer; the first insulating layer is at least arranged below the first gold finger and / or the second gold finger along the stacking direction, and has a groove, so that the first gold finger and the first semiconductor layer are intermittently in contact, and / or the second gold finger and the second semiconductor layer are intermittently in contact.

[0026] In a specific embodiment, the surface of the second semiconductor layer away from the first semiconductor layer has a second groove, so that the LED light-emitting chip has a plurality of mesa structures;

[0027] The second electrode includes a second gold finger and a plurality of second branches connected to the second gold finger; the second gold finger and the second branch are arranged on the second step surface;

[0028] The LED light-emitting chip further comprises a second insulating layer and a diffusion layer; the second insulating layer is arranged on the bottom and side surfaces of the second groove; the second gold finger and the second branch are located on the second insulating layer; the diffusion layer is partially arranged on the surface of the second semiconductor layer away from the first semiconductor layer and extends into the second groove and is electrically connected to the second electrode; or

[0029] The diffusion layer only covers the surface of the second semiconductor layer away from the first semiconductor layer; the second gold finger extends from the side of the second groove to the diffusion layer.

[0030] In a specific embodiment, the first electrode includes a first pad and a first gold finger connected to the first pad; the second electrode includes a second pad and two second gold fingers connected to the second pad; wherein the first gold finger is located between the two second gold fingers; or

[0031] The first electrode includes a first pad and two first gold fingers connected to the first pad; the second electrode includes a second pad and a second gold finger connected to the second pad; wherein the second gold finger is located between the two first gold fingers; or

[0032] The first electrode is an interdigitated electrode, including a first pad and a plurality of first gold fingers connected to the first pad; the second electrode is an interdigitated electrode, including a second pad and a plurality of second gold fingers connected to the second pad; wherein the plurality of first gold fingers and the plurality of second gold fingers are alternately arranged.

[0033] In a specific embodiment, the LED light-emitting chip further includes a substrate and a third insulating layer; the first semiconductor layer, the active light-emitting layer and the second semiconductor layer are sequentially stacked on the substrate; the third insulating layer covers the second semiconductor layer and exposes the pad;

[0034] The first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, the first electrode is an N-type electrode, and the second electrode is a P-type electrode.

[0035] In a specific embodiment, along a first direction perpendicular to the extending direction, a distance between adjacent first gold fingers and second gold fingers is greater than or equal to 10 microns and less than or equal to 90 microns;

[0036] Along the first direction, the distance between two adjacent first gold fingers is less than or equal to 100 micrometers; the distance between two adjacent second gold fingers is less than or equal to 100 micrometers.

[0037] In a specific embodiment, the width of the first gold finger is less than or equal to 5 microns; the width of the second gold finger is less than or equal to 5 microns;

[0038] Along the stacking direction, the sum of a projected area of ​​the first electrode on the epitaxial layer and a projected area of ​​the second electrode on the epitaxial layer is greater than one fifth of a projected area of ​​the first semiconductor on the epitaxial layer.

[0039] Beneficial effects of the embodiments of the present application: The present application provides an LED light-emitting chip, which includes an epitaxial layer, a first electrode, and a second electrode. The epitaxial layer includes a first semiconductor layer, an active light-emitting layer, and a second semiconductor layer that are stacked; and the epitaxial layer has multiple light-emitting areas. By arranging the LED chip into multiple light-emitting areas; the current expansion capability is greatly increased, and the operating voltage of the LED light-emitting chip is greatly reduced, thereby effectively improving the photoelectric conversion efficiency of the LED light-emitting chip, effectively reducing the energy consumption of the whole machine, and extending the battery life. At the same time, multiple light-emitting areas can also greatly improve the heat dissipation capacity, effectively reduce the thermal decay phenomenon, improve the reliability of the LED light-emitting chip, and extend the service life of the LED light-emitting chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 A schematic diagram of the structure of an LED light-emitting chip provided in the first embodiment of the present application;

[0041] Figure 2 for Figure 1 The cross-sectional view of the LED light emitting chip shown along line AA;

[0042] Figure 3 for Figure 1 A schematic diagram of the structure of the first groove in the LED light-emitting chip shown;

[0043] Figure 4a A schematic diagram of the structure of an LED light-emitting chip provided in the second embodiment of the present application;

[0044] Figure 4b-4d A schematic diagram of the structure of an LED light-emitting chip provided in some embodiments of the present application;

[0045] Figure 4e-Figure 4g A schematic diagram of the structure of an LED light-emitting chip provided in some other embodiments of the present application;

[0046] Figure 5 A schematic diagram of the structure of an LED light-emitting chip provided in the third embodiment of the present application;

[0047] Figure 6 A schematic diagram of the structure of an LED light-emitting chip provided in the fourth embodiment of the present application;

[0048] Figure 7 A schematic diagram of the structure of an LED light-emitting chip provided in the fifth embodiment of the present application;

[0049] Figure 8 A schematic diagram of the structure of an LED light-emitting chip provided in the sixth embodiment of the present application;

[0050] Fig. 9 A schematic diagram of the structure of an LED light-emitting chip provided in the seventh embodiment of the present application;

[0051] Fig.10 for Fig. 9 A schematic diagram of the structure of the first groove in the LED light-emitting chip shown;

[0052] Fig.11 for Fig. 9 The cross-sectional view of the LED light emitting chip shown along line BB;

[0053] Fig.12 A schematic diagram of the structure of an LED light-emitting chip provided in the eighth embodiment of the present application;

[0054] Fig.13 for Fig.12 The schematic diagram of the structure of the LED light emitting chip after removing the first electrode and the second electrode;

[0055] Fig.14 for Fig.12 The cross-sectional view of the LED light emitting chip along the CC line;

[0056] Fig.15 for Fig.12 The cross-sectional view of the LED light emitting chip along the DD line;

[0057] Fig.16 A schematic diagram of the structure of an LED light-emitting chip provided in the ninth embodiment of the present application;

[0058] Fig.17 for Fig.16 A cross-sectional view of the LED light emitting chip along line EE or line FF;

[0059] Fig.18 This is a cross-sectional view of the LED light-emitting chip provided in the tenth embodiment of the present application along line EE.

[0060] Description of Figure Numbers:

[0061] 1-epitaxial layer; 2-first electrode; 3-second electrode; 4-substrate; 5-third insulating layer; 6-first insulating layer; 7-diffusion layer; 8-second insulating layer; 10-first groove; 20-second groove; 100-first step surface; 200-second step surface; 101-main groove; 102-branch groove; 11-first semiconductor layer; 12-active light-emitting layer; 13-second semiconductor layer; 201-soldering pad; 202-gold finger; 203-branch; 21-first soldering pad; 22-first gold finger; 23-first branch; 31-second soldering pad; 32-second gold finger; 33-second branch. DETAILED DESCRIPTION

[0062] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technical workers in the field without making creative work are within the scope of protection of this application.

[0063] The terms "first", "second", "third" in this application are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined as "first", "second", "third" can expressly or implicitly include at least one of the features. In the description of this application, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined. In the embodiments of this application, all directional indications (such as up, down, left, right, front, back...) are only used to explain the relative position relationship, movement, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication also changes accordingly. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device comprising a series of steps or units is not limited to the steps or units listed, but optionally also includes steps or units that are not listed, or optionally also includes other steps or units inherent to these processes, methods, products or devices.

[0064] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0065] The present application is described in detail below with reference to the accompanying drawings and embodiments.

[0066] See also Figure 1-Figure 2 , Figure 1 A schematic diagram of the structure of an LED light-emitting chip provided in the first embodiment of the present application; Figure 2 for Figure 1 The cross-sectional view of the LED light emitting chip shown along line AA; Figure 3 for Figure 1 The present application provides an LED light-emitting chip for directly converting electrical energy into light energy; the LED light-emitting chip can be used as a light source for lighting or a backlight module of a display panel. Specifically, Figure 1 As shown, the LED light emitting chip may include an epitaxial layer 1 , a first electrode 2 and a second electrode 3 .

[0067] Among them, Figure 2 As shown, the epitaxial layer 1 may include a first semiconductor layer 11, an active light-emitting layer 12, and a second semiconductor layer 13 which are stacked. Specifically, the LED light-emitting chip may further include a substrate 4, and the epitaxial layer 1 is arranged on one side of the substrate 4; wherein the first semiconductor layer 11 is arranged on the surface of the substrate 4, the active light-emitting layer 12 is arranged on the side of the first semiconductor layer 11 away from the substrate 4, and the second semiconductor layer 13 is arranged on the side of the active light-emitting layer 12 away from the substrate 4. Specifically, the first semiconductor layer 11, the active light-emitting layer 12, and the second semiconductor layer 13 may be grown sequentially from the surface of the substrate 4 using a metal-organic chemical vapor deposition device (Metal-organic Chemical Vapor Deposition, MOCVD).

[0068] The epitaxial layer 1 has multiple light-emitting areas, which greatly increases the current expansion capability and greatly reduces the operating voltage of the LED light-emitting chip, thereby effectively improving the photoelectric conversion efficiency of the LED light-emitting chip, effectively reducing the energy consumption of the whole machine, and extending the battery life. At the same time, multiple light-emitting areas can also greatly improve the heat dissipation capacity, effectively reduce the thermal decay phenomenon, improve the reliability of the LED light-emitting chip, and extend the service life of the LED light-emitting chip.

[0069] like Figure 2-3As shown, in a specific embodiment, the surface of the second semiconductor layer 13 away from the first semiconductor layer 11 has a first groove 10, so that the first semiconductor layer 11 is partially exposed to form a first step surface 100. Specifically, along the stacking direction Z of the epitaxial layer 1, the first groove 10 extends from the surface of the second semiconductor layer 13 away from the first semiconductor layer 11 to the surface of the first semiconductor layer 11 away from the substrate 4, and penetrates the first semiconductor layer 11 and the active light-emitting layer 12. Among them, the exposed part of the first semiconductor layer 11 forms the bottom wall of the first groove 10, and the active light-emitting layer 12 and the second semiconductor layer 13 form the side wall of the first groove 10; the first step surface 100 is located on the bottom wall of the first groove 10.

[0070] The first electrode 2 is at least partially disposed on the first step surface 100 and is electrically connected to the first semiconductor layer 11, and is used to inject electrons into the first semiconductor layer 11 and enter the active light-emitting layer 12 through the first semiconductor layer 11. The second electrode 3 is at least partially disposed on the surface of the second semiconductor layer 13 away from the first semiconductor layer 11, and the second electrode 3 is insulated from the first electrode 2; the second electrode 3 is used to inject holes into the second semiconductor layer 13 and enter the active light-emitting layer 12 through the second semiconductor layer 13. Thus, the electrons entering the active light-emitting layer 12 from the first semiconductor layer 11 and the holes entering the active light-emitting layer 12 from the second semiconductor layer 13 are recombined, so that the active light-emitting layer 12 emits light.

[0071] Among them, Figure 1 As shown, the first electrode 2 and the second electrode 3 may include a pad 201 and a gold finger 202 electrically connected to the pad 201. The extension direction X of the gold finger 202 from the pad 201 and the stacking direction Z are perpendicular to each other.

[0072] By forming multiple light-emitting areas between the first electrode 2 and the second electrode 3, the current expansion capability is greatly increased, and the operating voltage of the LED light-emitting chip is greatly reduced, thereby effectively improving the photoelectric conversion efficiency of the LED light-emitting chip, effectively reducing the energy consumption of the whole machine, and extending the battery life. At the same time, multiple light-emitting areas can also greatly improve the heat dissipation capacity, effectively reduce the thermal decay phenomenon, improve the reliability of the LED light-emitting chip, and extend the service life of the LED light-emitting chip.

[0073] like Figure 1 As shown, in a specific embodiment, at least one of the first electrode 2 and the second electrode 3 further includes a plurality of branches 203 connected to the gold finger 202. In a specific embodiment, the first electrode 2 and the second electrode 3 both include at least a pad 201 and a gold finger 202, and at least one of the first electrode 2 and the second electrode 3 includes a plurality of branches 203.

[0074] By setting multiple branches 203 on the gold fingers 202 of the first electrode 2 and / or the second electrode 3, multiple light-emitting areas are formed between the gold fingers 202, between the gold fingers 202 and the branches 203, and between the branches 203, so as to further increase the number of light-emitting areas.

[0075] like Figure 1 As shown, in a specific embodiment, the first electrode 2 and the second electrode 3 may both include a gold finger 202. Specifically, the first electrode 2 may include a first pad 21 and a first gold finger 22 connected to the first pad 21; the second electrode 3 may include a second pad 31 and a second gold finger 32 connected to the second pad 31. The first pad 21 and the second pad 31 are arranged on opposite sides of the epitaxial layer 1 along the extension direction X. The first gold finger 22 extends from the first pad 21 along the extension direction X toward the second pad 31, and the second gold finger 32 extends from the second pad 31 along the extension direction X toward the first pad 21; that is, the first gold finger 22 and the second gold finger 32 extend relatively along the same direction. And the number of the first gold fingers 22 and the number of the second gold fingers 32 are both greater than or equal to 1.

[0076] Specifically, the first electrode 2 includes a first golden finger 22, and the second electrode 3 includes two golden fingers 202; wherein, along a first direction Y perpendicular to the extension direction X, the first golden finger 22 is located between two second golden fingers 32, so as to form two light-emitting areas on both sides of the first golden finger 22 along the first direction Y.

[0077] Wherein, the first electrode 2 and the second electrode 3 both include a plurality of branches 203 connected to the gold finger. Specifically, the first electrode 2 may also include a plurality of first branches 23 connected to the first gold finger 22, and the plurality of first branches 23 are arranged at intervals along the extension direction X on the first gold finger 22; the second electrode 3 may also include a plurality of second branches 33 connected to the second gold finger 32, and the plurality of second branches 33 are arranged at intervals along the extension direction X on the second gold finger 32; in this way, the light-emitting area is divided into a plurality of sub-light-emitting areas, so that the number of light-emitting areas is increased. Specifically, a sub-light-emitting area is formed by the adjacent first branches 23, the second branches 33, the first gold finger 22, and the second gold finger 32; and two adjacent sub-light-emitting areas are connected to each other.

[0078] Furthermore, multiple branches 203 are connected to opposite sides of the gold finger 202, further increasing the number of light-emitting areas. Specifically, multiple first branches 23 are connected to both sides of the first gold finger 22 along the first direction Y, and multiple second branches 33 are connected to both sides of the second gold finger 32 along the first direction Y. The multiple first branches 23 and the multiple second branches 33 between the first gold finger 22 and the second gold finger 32 are alternately arranged along the extension direction X.

[0079] Specifically, along the extension direction X, the projections of the adjacent first branches 23 and the second branches 33 partially overlap, so that the adjacent first branches 23 and the second branches 33 can be surrounded by the first gold finger 22 and the second gold finger 32 to form a sub-light-emitting area, thereby reducing the operating voltage. Specifically, the second branch 33 located between the first gold finger 22 and the second gold finger 32 partially overlaps with the projection of the adjacent first branch 23.

[0080] See also Figure 3 In a specific embodiment, the first groove 10 may include a main groove 101 and a plurality of branch grooves 102 connected to the main groove 101; wherein the first gold finger 22 is disposed in the main groove 101, and the plurality of first branches 23 are disposed in the plurality of branch grooves 102 in a one-to-one correspondence, so that the plurality of first branches 23 and the first gold finger 22 are integrally formed. Specifically, the main groove 101 is along the extension direction X, and the extension direction of the branch groove 102 intersects with the extension direction X of the main groove 101; and the extension directions of the plurality of branch grooves 102 located on the same side of the main groove 101 along the first direction Y are parallel, and the extension directions of the branch grooves 102 located on both sides of the main groove 101 may be axially symmetrical with respect to the extension direction X.

[0081] Of course, in other embodiments, the first electrode 2 may also include two first gold fingers 22, and the second electrode 3 may also include one first gold finger 22; wherein the second gold finger 32 is located between the two first gold fingers 22, so as to form two light-emitting areas on both sides of the second gold finger 32 along the first direction Y.

[0082] like Figure 2 As shown, in a specific embodiment, the LED light-emitting chip may further include a substrate 4 and a third insulating layer 5. The substrate 4 may be, but is not limited to, a sapphire substrate 4, a silicon substrate 4, etc., for carrying the film layers of the LED light-emitting chip; the first semiconductor layer 11, the active light-emitting layer 12, and the second semiconductor layer 13 are sequentially stacked on the substrate 4. The third insulating layer 5 covers the second semiconductor layer 13 and exposes the pad; and the third insulating layer 5 completely covers the surface of the first gold finger 22 and the surface of the second gold finger 32.

[0083] The first semiconductor layer 11 may be an N-type semiconductor layer, the second semiconductor layer 13 may be a P-type semiconductor layer, the first electrode 2 may be an N-type electrode, and the second electrode 3 may be a P-type electrode.

[0084] Continue reading Figure 1 In a specific embodiment, along the first direction Y, the distance d between the adjacent first gold fingers 22 and the second gold fingers 32 is greater than or equal to 10 microns and less than or equal to 90 microns; to ensure the density of the electrode on the epitaxial layer, thereby enhancing the current expansion capability. For example, the distance d between the adjacent first gold fingers 22 and the second gold fingers 32 can be any value of 10 microns, 30 microns, 50 microns, 70 microns or 90 microns. It should be noted that, in some embodiments, the distance d between different first gold fingers 22 and second gold fingers 32 can be different; that is, the distance between the first gold finger 22 and the second gold fingers 32 on both sides can be different. It can be understood that in a specific embodiment, the distance between the adjacent first branches 23 and the second branches 33 is also greater than or equal to 10 microns and less than or equal to 90 microns.

[0085] Furthermore, along the first direction Y, the distance a between two adjacent second gold fingers 32 is less than or equal to 100 microns, so as to ensure the density of the electrode line on the epitaxial layer, thereby enhancing the current expansion capability. For example, the distance a between two adjacent second gold fingers 32 can be any value of 20 microns, 40 microns, 60 microns, 80 microns or 100 microns. It should be noted that, in some embodiments, the distance a between different second gold fingers 32 can also be different.

[0086] like Figure 1 As shown, in a specific embodiment, the width c of the first gold finger 22 is less than or equal to 5 microns; to ensure the density of the electrode line on the epitaxial layer, thereby enhancing the current expansion capability. For example, the width c of the first gold finger 22 can be any value of 1 micron, 2 microns, 3 microns, 4 microns, and 5 microns. The width e of the second gold finger 32 is less than or equal to 5 microns; to ensure the density of the electrode line on the epitaxial layer, thereby enhancing the current expansion capability. For example, the width e of the second gold finger 32 can be any value of 1 micron, 2 microns, 3 microns, 4 microns, and 5 microns.

[0087] Combination Figure 1 and Figure 2 , along the stacking direction Z, the sum of the projected area of ​​the first electrode 2 on the epitaxial layer 1 and the projected area of ​​the second electrode 3 on the epitaxial layer 1 is greater than one fifth of the projected area of ​​the first semiconductor 11 on the epitaxial layer 1; so as to enhance the current expansion capability.

[0088] See also Figure 4a , Figure 4aA schematic diagram of the structure of the LED light-emitting chip provided in the second embodiment of the present application. The structure of the LED light-emitting chip provided in the second embodiment of the present application is basically the same as the structure of the LED light-emitting chip provided in the first embodiment of the present application, except that, in the LED light-emitting chip provided in the second embodiment of the present application, the first electrode 2 may include a first solder pad 21 and a first gold finger 22 connected to the first solder pad 21, and the second electrode 3 may include a second solder pad 31 and a second gold finger 32 connected to the second solder pad 31; wherein the first gold finger 22 is not connected to the branch 203, and the second gold finger 32 is connected to multiple branches 203. It can be understood that the branch 203 connected to the first gold finger 22 needs to be accommodated by the branch groove 102, and omitting the branch 203 connected to the first gold finger 22 can effectively simplify the preparation process of the first groove 10, thereby reducing the manufacturing cost.

[0089] The first electrode 2 may be a forked electrode, including a first pad 21 and a plurality of first gold fingers 22 connected to the first pad 21; the second electrode 3 may also be a forked electrode, including a second pad 31 and a plurality of second gold fingers 32 connected to the second pad 31; wherein the plurality of first gold fingers 22 and the plurality of second gold fingers 32 are alternately arranged along the first direction Y. Specifically, the first electrode 2 may include two first gold fingers 22 arranged at intervals, the second electrode 3 may include three second gold fingers 32 arranged at intervals, and the two first gold fingers 22 are respectively arranged between two adjacent second gold fingers 32. The two first gold fingers 22 are not connected to the first branch 23, the second electrode 3 may include a plurality of second branches 33 connected to the second gold finger 32; and the plurality of second branches 33 adjacent to each first gold finger 22 are arranged toward the first gold finger 22. In this way, the number of sub-light-emitting areas is further increased, thereby reducing the operating voltage of the LED light-emitting chip.

[0090] Further, along the first direction Y, the distance b between two adjacent first gold fingers 22 is less than or equal to 100 microns, so as to ensure the density of the electrode on the epitaxial layer, thereby enhancing the current expansion capability. For example, the distance b between two adjacent first gold fingers 22 can be any value of 20 microns, 40 microns, 60 microns, 80 microns or 100 microns. It should be noted that, in some embodiments, the distance b between different first gold fingers 22 can also be different.

[0091] Of course, if Figure 4b-4d As shown, Figure 4b-4d Schematic diagram of the structure of the LED light-emitting chip provided in some embodiments of the present application; in some other embodiments, the first gold finger 22 and the second gold finger 32 may not be connected to the multiple branches 203. Specifically, in a specific embodiment (such as Figure 4b), the first electrode 2 may also include three first gold fingers 22, and the second electrode may include two second gold fingers 32; in another specific embodiment (such as Figure 4c ), the first electrode 2 may further include three first gold fingers 22, and the second electrode may include four second gold fingers 32; in another specific embodiment (such as Figure 4d ), the first electrode 2 may further include four first gold fingers 22, and the second electrode may include three second gold fingers 32.

[0092] like Figure 4e-Figure 4g As shown, Figure 4e-Figure 4g This is a schematic diagram of the structure of the LED light-emitting chip provided in some other embodiments of the present application. Figure 4e ), the first electrode 2 may include two first gold fingers 22 not connected to the multiple branches 203, and the second electrode 3 may include three second gold fingers 32 connected to the multiple second branches 33. Specifically, one end of the two first gold fingers 22 close to the second pad 31 is bent inward along the first direction Y, and the two second gold fingers 32 located on both sides are bent inward at the middle part.

[0093] In another embodiment (such as Figure 4f ), the first electrode 2 may include two first gold fingers 22 connected to the first branches 23, and the second electrode 3 may include three second gold fingers 32. Among them, the multiple first branches 23 connected to the two first gold fingers 22 extend in the opposite direction to the outside along the first direction Y, and the first branches 23 on both sides of the extension direction X gradually tilt to both sides. The multiple second branches 33 connected to the two outer second gold fingers 32 also extend in the opposite direction to the outside along the first direction Y, and the second branches 33 on both sides of the extension direction X gradually tilt to both sides; and the second gold finger 32 located between the two first gold fingers 22 is not connected to the second branch 33.

[0094] In yet another embodiment (such as Figure 4g ), the first electrode 2 may include two first gold fingers 22 connected to the first branches 23, and the second electrode 3 may include three second gold fingers 32. The multiple first branches 23 connected to the two first gold fingers 22 extend outward in opposite directions along the first direction Y; the multiple second branches 33 connected to the two outer second gold fingers 32 extend inward toward each other along the first direction Y, and the second gold finger 32 located between the two first gold fingers 22 is not connected to the second branch 33.

[0095] See also Figure 5 , Figure 5The schematic diagram of the structure of the LED light-emitting chip provided in the third embodiment of the present application. The structure of the LED light-emitting chip provided in the third embodiment of the present application is basically the same as that of the LED light-emitting chip provided in the first embodiment of the present application, except that, in the LED light-emitting chip provided in the third embodiment of the present application, the first electrode 2 is a forked electrode, and the first electrode 2 may include two first gold fingers 22; wherein the two first gold fingers 22 and the two second gold fingers 32 are alternately arranged along the first direction Y to further increase the number of sub-light-emitting areas, thereby reducing the operating voltage of the LED light-emitting chip.

[0096] See also Figure 6 , Figure 6 A schematic diagram of the structure of the LED light-emitting chip provided in the fourth embodiment of the present application. The structure of the LED light-emitting chip provided in the fourth embodiment of the present application is basically the same as that of the LED light-emitting chip provided in the first embodiment of the present application, except that, in the LED light-emitting chip provided in the fourth embodiment of the present application, the first electrode 2 may include a first gold finger 22 and a plurality of first branches 23; the second electrode 3 may include a second gold finger 32 and a plurality of second branches 33; wherein the plurality of first branches 23 are arranged at intervals and connected to the side of the first gold finger 22 close to the second gold finger 32, the plurality of second branches 33 are arranged at intervals and connected to the side of the second gold finger 32 close to the first gold finger 22, and the plurality of first branches 23 and the plurality of second branches 33 are arranged alternately along the extension direction of the first gold finger 22. In this way, the plurality of first branches 23 and the plurality of second branches 33 between the first gold finger 22 and the second gold finger 32 divide the light-emitting area into a plurality of sub-light-emitting areas, thereby reducing the operating voltage.

[0097] Specifically, in this embodiment, the plurality of first branches 23 are respectively disposed on both sides of the first golden finger 22 along the first direction Y; the plurality of second branches 33 are only disposed on one side of the second golden finger 32 facing the first golden finger 22 along the first direction Y. And along the extension direction X, the projections of adjacent first branches 23 and second branches 33 partially overlap.

[0098] See also Figure 7 , Figure 7 Schematic diagram of the structure of the LED light-emitting chip provided in the fifth embodiment of the present application. The structure of the LED light-emitting chip provided in the fourth embodiment of the present application is basically the same as the structure of the LED light-emitting chip provided in the fourth embodiment of the present application, except that, in the LED light-emitting chip provided in the fifth embodiment of the present application, along the extension direction X, the projections of the adjacent first branches 23 and second branches 33 may not overlap.

[0099] See also Figure 8 , Figure 8Schematic diagram of the structure of the LED light-emitting chip provided in the sixth embodiment of the present application. The structure of the LED light-emitting chip provided in the fourth embodiment of the present application is basically the same as the structure of the LED light-emitting chip provided in the fifth embodiment of the present application, except that, in the LED light-emitting chip provided in the sixth embodiment of the present application, the plurality of second branches 33 connected to each second gold finger 32 are all arranged on the side of the second gold finger 32 away from the first gold finger 22 along the first direction Y.

[0100] See also Figure 9-11 , Fig. 9 A schematic diagram of the structure of an LED light-emitting chip provided in the seventh embodiment of the present application; Fig.10 for Fig. 9 A schematic diagram of the structure of the first groove in the LED light-emitting chip shown;

[0101] Fig.11 for Fig. 9 The structure of the LED light-emitting chip provided in the seventh embodiment of the present application is basically the same as that of the LED light-emitting chip provided in the fourth embodiment of the present application, except that, in the LED light-emitting chip provided in the seventh embodiment of the present application, the number of the first grooves 10 is multiple. Specifically, as Fig.10 As shown, a plurality of first grooves 10 are arranged at intervals along the extension direction X; wherein each first groove 10 may include a main groove 101 and a branch groove 102 connected to the main groove 101; and each first groove 10 includes two branch grooves 102 respectively arranged on both sides of the main groove 101 along the first direction Y. The first electrode 2 may include a first gold finger 22 and a plurality of first branches 23 connected to the first gold finger 22; and the plurality of first branches 23 are arranged in the plurality of branch grooves 102 in a one-to-one correspondence.

[0102] Specific, combined Fig. 9 and Fig.11 The LED light-emitting chip may further include a first insulating layer 6; along the extension direction X, the first insulating layer 6 is at least arranged below the first gold finger 22 along the stacking direction Z, so that the first gold finger 22 and the first semiconductor layer 11 are intermittently in contact. This avoids the first gold finger 22 being electrically connected to the active light-emitting layer 12 and the second semiconductor layer 13, causing current crosstalk, and at the same time can improve the lateral current expansion capability.

[0103] See also Figure 12-Figure 15 , Fig.12 A schematic diagram of the structure of an LED light-emitting chip provided in the eighth embodiment of the present application; Fig.13 for Fig.12 The schematic diagram of the structure of the LED light emitting chip after removing the first electrode and the second electrode; Fig.14 for Fig.12The schematic diagram of the structure of the LED light emitting chip along the CC line shown; Fig.15 for Fig.12 The structure schematic diagram of the LED light-emitting chip along the DD line is shown. The structure of the LED light-emitting chip provided in the eighth embodiment of the present application is basically the same as the structure of the LED light-emitting chip provided in the seventh embodiment of the present application, except that the LED light-emitting chip provided in the eighth embodiment of the present application may further include a diffusion layer 7; the diffusion layer 7 is arranged on the surface of the second semiconductor layer 13 away from the first semiconductor layer 11 to regulate the carrier concentration and ensure the effective expansion and homogenization of the current.

[0104] Specifically, Fig.15 As shown, the diffusion layer 7 is located between the first insulating layer 6 and the second semiconductor layer 13; Fig.13 , a plurality of first insulating layers 6 are arranged at intervals on the surface of the second semiconductor layer 13, and the first insulating layer 6 is arranged below the second gold finger 32 along the stacking direction Z, so that the second gold finger 32 and the diffusion layer 7 are intermittently in contact, so that a portion of the diffusion layer 7 corresponding to the second gold finger 32 is exposed, so that the second gold finger 32 is electrically connected to the diffusion layer 7 through the gap between adjacent first insulating layers 6. Among them, the diffusion layer 7 can be made of a transparent conductive material with high transmittance, such as ITO, Ni / graphene, etc.

[0105] Among them, combined Fig.14 and Fig.15 The second gold finger 32 is at least disposed on the surface of the diffusion layer 7 located in the gap between the adjacent first insulating layers 6 to electrically connect with the second semiconductor layer 13 through the diffusion layer 7 .

[0106] See also Figure 16-Figure 17 , Fig.16 A schematic diagram of the structure of an LED light-emitting chip provided in the ninth embodiment of the present application; Fig.17 for Fig.16 The LED light-emitting chip is shown in a cross-sectional view along line EE or line FF. In the LED light-emitting chip provided in the ninth embodiment of the present application, the second semiconductor layer 13 has a second groove 20 on a surface away from the first semiconductor layer 11, so that the LED light-emitting chip forms a plurality of mesa structures, each of which forms a light-emitting area. The shape of the mesa structure can be a triangle, a square, a rectangle, a polygon, etc. Fig.16 The mesa structure is rectangular. Specifically, along the stacking direction Z of the epitaxial layer 1, the second groove 20 extends from the surface of the second semiconductor layer 13 away from the first semiconductor layer 11 to the surface of the first semiconductor layer 11 away from the substrate 4, or extends into the first semiconductor layer 11. The exposed portion of the surface of the first semiconductor layer 11 forms the bottom wall of the second groove 20, and the exposed portion of the side wall of the first semiconductor layer, the side wall of the active light-emitting layer 12, and the side wall of the second semiconductor layer 13 form the side wall of the second groove 20.

[0107] Specifically, the second electrode 3 may include a plurality of second gold fingers 32 and a plurality of second branches 33 connected to the second gold fingers, and the second gold fingers 32 and the second branches 33 are both disposed on the second step surface 200 , that is, the second gold fingers 32 and the second branches 33 are both disposed in the second groove 20 .

[0108] Combination Fig.16 and Fig.17 In this embodiment, the LED light-emitting chip may include a second insulating layer 8 and a diffusion layer 7. The second insulating layer 8 is disposed on the bottom and side surfaces of the second groove 20; the second gold finger 32 and the second branch 33 are located on the second insulating layer 8; the diffusion layer 7 is partially disposed on the surface of the second semiconductor layer 13 away from the first semiconductor layer 11 and extends into the second groove 20 and is electrically connected to the second electrode 3, so that the current can be input into the diffusion layer 7 located on the surface of the second semiconductor layer 13 through the second gold finger 32 and the second branch 33 located in the second groove 20, and input into the second semiconductor layer 13 through the diffusion layer 7, thereby further enhancing the current expansion capability.

[0109] Specifically, the second insulating layer 8 covers the surface of the active light-emitting layer 12 and the surface of the second semiconductor layer 13 located on the side wall of the second groove 20, and the surface of the first semiconductor layer 11 located on the bottom wall of the second groove 20, so that current can only enter the first semiconductor layer 11 from the side surface of the second semiconductor layer 13 away from the first semiconductor layer 11, thereby avoiding current crosstalk and improving the lateral current expansion capability.

[0110] The portion of the diffusion layer 7 extending into the second groove 20 is located between the second gold finger 32 and the second insulating layer 8, and between the second branch 33 and the second insulating layer 8, and covers the surface of the second insulating layer 8 to increase the contact area between the diffusion layer 7 and the second gold finger 32 and the second branch 33, thereby further enhancing the current expansion capability.

[0111] like Fig.16 As shown, the first electrode 2 may include two first gold fingers 22 connected to a plurality of first branches 23, and the second electrode 3 may include three second gold fingers 32 connected to a plurality of second branches 33. The first gold fingers 22 are connected to the first branches 23 on both sides, and the second gold fingers are also connected to the second branches 33 on both sides; the chip forms a plurality of mesa structures by arranging grooves, and each mesa structure forms a light-emitting area.

[0112] See also Fig.18 , Fig.18This is a cross-sectional view of the LED light-emitting chip provided in the tenth embodiment of the present application along the EE line; the structure of the LED light-emitting chip provided in the tenth embodiment of the present application is basically the same as the structure of the LED light-emitting chip provided in the ninth embodiment of the present application, except that, in the LED light-emitting chip provided in the tenth embodiment of the present application, the diffusion layer 7 may also only cover the surface of the second semiconductor layer 13 away from the first semiconductor layer 11. In this embodiment, the second electrode 3 may only include a second gold finger 32 disposed in the second groove 20, and the second gold finger 32 may extend from the side wall of the second groove 20 to the diffusion layer 7, and at least cover a part of the surface of one side of the diffusion layer 7 away from the second semiconductor layer 13. In this way, the current can be input into the diffusion layer 7 located on the surface of the second semiconductor layer 13 through the second gold finger 32 located in the second groove 20, and input into the second semiconductor layer 13 through the diffusion layer 7, thereby further enhancing the current expansion capability.

[0113] The present application provides an LED light-emitting chip, which includes an epitaxial layer 1, a first electrode 2, and a second electrode 3. The epitaxial layer 1 includes a first semiconductor layer 11, an active light-emitting layer 12, and a second semiconductor layer 13 arranged in a stacked manner; the surface of the second semiconductor layer 13 away from the first semiconductor layer 11 has a first groove 10, so that the first semiconductor layer 11 is partially exposed to form a first step surface 100. The first electrode 2 is at least partially arranged on the first step surface 100; the second electrode 3 is at least partially arranged on the surface of the second semiconductor layer 13 away from the first semiconductor layer 11; wherein the first electrode 2 and the second electrode 3 both include a pad 201 and a gold finger 202 electrically connected to the pad 201. By forming multiple light-emitting areas on the first electrode 2 and the second electrode 3; the current expansion capability is greatly increased, and the operating voltage of the LED light-emitting chip is greatly reduced, thereby effectively improving the photoelectric conversion efficiency of the LED light-emitting chip, effectively reducing the energy consumption of the whole machine, and extending the battery life. At the same time, multiple light-emitting areas can also greatly improve the heat dissipation capability, effectively reduce the thermal decay phenomenon, improve the reliability of the LED light-emitting chip, and extend the service life of the LED light-emitting chip.

[0114] The above description is only an implementation method of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly used in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. An LED light-emitting chip, characterized in that: include: The epitaxial layer comprises a first semiconductor layer, an active light emitting layer and a second semiconductor layer which are stacked; The epitaxial layer has a plurality of light-emitting regions; A surface of the second semiconductor layer away from the first semiconductor layer has a first groove, so that the first semiconductor layer is partially exposed to form a first step surface; A first electrode, at least partially disposed on the first step surface; A second electrode, at least partially disposed on a surface of the second semiconductor layer away from the first semiconductor layer; Wherein, the first electrode and the second electrode both include a pad and a gold finger electrically connected to the pad; and at least one of the first electrode and the second electrode includes a plurality of branches connected to the gold finger.

2. The LED light emitting chip according to claim 1, characterized in that: The opposite sides of the golden finger are connected with a plurality of the branches.

3. The LED light emitting chip according to claim 1, characterized in that: The first electrode and the second electrode both include the gold finger and a plurality of branches connected to the gold finger.

4. The LED light emitting chip according to claim 1, characterized in that: The first electrode includes a first pad and a first gold finger connected to the first pad; The second electrode includes a second pad and a second gold finger connected to the second pad; Wherein, the second golden finger connects a plurality of the branches.

5. The LED light emitting chip according to claim 1, characterized in that: The first electrode includes a first gold finger and a plurality of first branches connected to the first gold finger; The second electrode includes a second golden finger and a plurality of second branches connected to the second golden finger; Among them, multiple first branches are arranged at intervals and connected to the side of the first gold finger close to the second gold finger, multiple second branches are arranged at intervals and connected to the side of the second gold finger close to the first gold finger, and multiple first branches and multiple second branches are alternately arranged along the extension direction of the first gold finger.

6. The LED light emitting chip according to claim 1, characterized in that: Along the extension direction of the first gold finger of the first electrode, projections of adjacent first branches of the first electrode and second branches of the second electrode partially overlap.

7. The LED light emitting chip according to claim 1, characterized in that: The first electrode includes a first gold finger and a plurality of first branches connected to the first gold finger; The first groove includes a main groove and a plurality of branch grooves connected to the main groove, the first gold finger is arranged in the main groove, and the plurality of first branches are arranged in the plurality of branch grooves in a one-to-one correspondence.

8. The LED light emitting chip according to claim 1, characterized in that: The first electrode includes a first gold finger and a plurality of first branches connected to the first gold finger; There are multiple first grooves, and the multiple first grooves are arranged at intervals along the extension direction of the first gold finger; the first groove includes a main groove and a branch groove connected to the main groove; The LED light-emitting chip also includes a first insulating layer; the first insulating layer is at least arranged below the first gold finger and / or the second gold finger along the stacking direction, and has a groove, so that the first gold finger and the first semiconductor layer are intermittently in contact, and / or the second gold finger and the second semiconductor layer are intermittently in contact.

9. The LED light emitting chip according to claim 1, characterized in that: A second groove is formed on a surface of the second semiconductor layer away from the first semiconductor layer, so that a portion of the first semiconductor layer is exposed to form a second step surface; The second electrode includes a second gold finger and a plurality of second branches connected to the second gold finger; the second gold finger and the second branch are arranged on the second step surface; The LED light-emitting chip further comprises a second insulating layer and a diffusion layer; the second insulating layer is arranged on the bottom and side surfaces of the second groove; the second gold finger and the second branch are located on the second insulating layer; the diffusion layer is partially arranged on the surface of the second semiconductor layer away from the first semiconductor layer and extends into the second groove and is electrically connected to the second electrode; or The diffusion layer only covers the surface of the second semiconductor layer away from the first semiconductor layer; the second gold finger extends from the side of the second groove to the diffusion layer.

10. The LED light emitting chip according to any one of claims 1 to 9, characterized in that: The first electrode includes a first pad and a first gold finger connected to the first pad; the second electrode includes a second pad and two second gold fingers connected to the second pad; wherein the first gold finger is located between the two second gold fingers; or The first electrode includes a first pad and two first gold fingers connected to the first pad; the second electrode includes a second pad and a second gold finger connected to the second pad; wherein the second gold finger is located between the two first gold fingers; or The first electrode is an interdigitated electrode, including a first pad and a plurality of first gold fingers connected to the first pad; the second electrode is an interdigitated electrode, including a second pad and a plurality of second gold fingers connected to the second pad; wherein the plurality of first gold fingers and the plurality of second gold fingers are alternately arranged.

11. The LED light emitting chip according to any one of claims 1 to 9, characterized in that: The LED light-emitting chip further comprises a substrate and a third insulating layer; the first semiconductor layer, the active light-emitting layer and the second semiconductor layer are sequentially stacked on the substrate; the third insulating layer covers the second semiconductor layer and exposes the pad; The first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, the first electrode is an N-type electrode, and the second electrode is a P-type electrode.

12. The LED light emitting chip according to claim 10, characterized in that: Along a first direction perpendicular to the extending direction of the first golden finger, a distance between adjacent first golden fingers and second golden fingers is greater than or equal to 10 microns and less than or equal to 90 microns; Along the first direction, the distance between two adjacent first gold fingers is less than or equal to 100 micrometers; the distance between two adjacent second gold fingers is less than or equal to 100 micrometers.

13. The LED light emitting chip according to claim 10, characterized in that: The width of the first gold finger is less than or equal to 5 microns; the width of the second gold finger is less than or equal to 5 microns; Along the stacking direction, the sum of a projected area of ​​the first electrode on the epitaxial layer and a projected area of ​​the second electrode on the epitaxial layer is greater than one fifth of a projected area of ​​the first semiconductor on the epitaxial layer.

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