Deslagging device for germanium single crystal growth

Through the slag removal device for the growth of germanium single crystals, the slag container is used to remove the slag on the melt surface multiple times, solving the problem of difficulty in removing the slag during the growth of germanium single crystals, achieving efficient and flexible slag removal operations, avoiding germanium melt pollution and crystallization.

CN223061126UActive Publication Date: 2025-07-04KUNMING YUNZHE HIGH TECH
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Patent Information

Application Number
CN202422254632.2
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-09-14
Publication Date
2025-07-04
Estimated Expiration
2034-09-14

AI Technical Summary

Technical Problem

During the growth of existing germanium single crystals, it is difficult to effectively remove the scum, resulting in germanium melt contamination and crystal crystallization, and conventional methods will introduce secondary contamination.

Method used

A slag removal device for the growth of germanium single crystals is adopted, including a furnace body, a flow guide cylinder, an insulation cylinder, a slag container, a control part and a graphite crucible. The slag on the melt surface is removed by lifting up and down multiple times to avoid opening the secondary chamber, and achieve efficient and flexible slag removal operation.

Benefits of technology

During the growth process of germanium single crystal, the scum on the melt surface is effectively removed, the scum on the surface is prevented from entering the solid-liquid interface, and the secondary contamination of the germanium melt is avoided, which improves the efficiency and flexibility of the slag removal, and maintains the stability of the crystal growth process.

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Abstract

A slag removal device for germanium single crystal growth comprises a furnace body, a guide cylinder, a heat preservation cylinder, a scum container, a control part and a graphite crucible, the furnace body comprises a main chamber and an auxiliary chamber, the auxiliary chamber is arranged at the top of the main chamber, and a suspended seed crystal clamp penetrates through the auxiliary chamber from top to bottom to enter the main chamber; the bottom of the main chamber is provided with a console, a graphite crucible and a heat preservation cylinder; a control piece is arranged on a slope surface on one side of the upper part of the main chamber and connected with one end of a control rod extending into the main chamber, a sealing ring is arranged at an opening of the control rod extending into the main chamber, and a scum container is suspended at the other end of the control rod; an observation window is formed in the slope surface of the other side of the main chamber. The device can remove slag floating on the surface of a melt in the crystal growth process, and prevents the floating slag from entering a solid-liquid interface to cause crystal change of growing germanium crystals; in the single crystal growth process, the auxiliary chamber does not need to be opened, so that the germanium melt is prevented from being secondarily polluted or oxidized.
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