Semiconductor metal tin plating equipment

Abstract

The utility model relates to semiconductor metal tin plating equipment, and belongs to the technical field of tin plating equipment, the semiconductor metal tin plating equipment comprises a box body, a material disc, a conveying mechanism, a cleaning tank, a first ultrasonic mechanism, a tin plating tank and a second ultrasonic mechanism, the semiconductor metal at the first tensioning wheel mechanism is located in the cleaning tank, the first ultrasonic mechanism provides ultrasonic waves for the cleaning tank, the semiconductor metal at the second tensioning wheel mechanism is located in the tin plating tank, and the second ultrasonic mechanism provides ultrasonic waves for the tin plating tank. According to the semiconductor metal tin plating equipment, pollutants on semiconductor metal can be effectively removed through ultrasonic waves, an oxide layer on the surface of the semiconductor metal is removed, and the tin plating uniformity is improved.

Description

Technical Field

[0001] This application relates to the technical field of tin plating, and particularly to a semiconductor metal tin plating device. Background Art

[0002] Semiconductor metal tin plating refers to the process of forming a tin layer on the surface of semiconductor metals or package pins through electroplating or tin dipping during the semiconductor packaging process. Tin plating can improve the electrical conductivity, oxidation resistance, and extend the service life of semiconductor metals. The tin dipping process is a commonly used tin plating process. First, cleaning and flux immersion treatments are carried out, and then the pretreated device is immersed in molten lead-tin alloy (such as 63% Sn - 37% Pb) to form a tin layer.

[0003] However, due to the surface tension of the molten solder and the influence of the surface oxide layer, the thickness of the tin layer is prone to unevenness. Summary of the Utility Model

[0004] Based on this, it is necessary to provide a semiconductor metal tin plating device to solve the technical problem of the uneven thickness of the tin layer existing in the prior art.

[0005] To achieve the above object, this application provides a semiconductor metal tin plating device, which includes:

[0006] A box body with a feed port and a discharge port respectively provided at both ends;

[0007] A tray rotatably arranged at the feed port of the box body, and the tray is wound with semiconductor metal;

[0008] A conveying mechanism, including a first guide wheel, a first tensioning wheel mechanism, a second guide wheel, a second tensioning wheel mechanism, a tin scraping wheel mechanism, and a driving wheel mechanism arranged in sequence from the feed port to the discharge port. The driving wheel mechanism clamps and drives the semiconductor metal to move horizontally, and the parts of the semiconductor metal corresponding to the first tensioning wheel mechanism and the second tensioning wheel mechanism bend downward;

[0009] A cleaning tank is arranged at the bottom of the first tensioning wheel mechanism, and there is detergent in the cleaning tank. The semiconductor metal at the first tensioning wheel mechanism is in the cleaning tank;

[0010] A first ultrasonic mechanism for providing ultrasonic waves to the cleaning tank;

[0011] A tin plating tank is arranged at the bottom of the second tensioning wheel mechanism, and there is molten tin liquid in the tin plating tank. The semiconductor metal at the second tensioning wheel mechanism is in the tin plating tank; and

[0012] A second ultrasonic mechanism for providing ultrasonic waves to the tin plating tank.

[0013] Optionally, the driving wheel mechanism includes:

[0014] An upper driving wheel rotatably arranged at the discharge port;

[0015] A lower driving wheel rotatably arranged directly below the upper driving wheel, with a semiconductor metal extrusion clamp placed between the upper driving wheel and the lower driving wheel; and

[0016] A rotational driving mechanism for driving the upper driving wheel or the lower driving wheel to rotate.

[0017] Optionally, the height of the upper driving wheel and / or the lower driving wheel is adjustable.

[0018] Optionally, the height of the first tensioning wheel mechanism, the second guiding wheel, and the second tensioning wheel mechanism is adjustable.

[0019] Optionally, the first ultrasonic mechanism includes:

[0020] A first ultrasonic generator arranged inside the box; and

[0021] A first ultrasonic transducer electrically connected to the first ultrasonic generator and arranged on the bottom surface of the cleaning tank.

[0022] Optionally, the second ultrasonic mechanism includes:

[0023] A second ultrasonic generator arranged inside the box; and

[0024] A second ultrasonic transducer electrically connected to the second ultrasonic generator and arranged on the side surface of the tin plating tank.

[0025] Optionally, there are two second ultrasonic generators and second ultrasonic transducers. The two second ultrasonic generators and the first ultrasonic generator are stacked in sequence on the outer side of the box. The two second ultrasonic transducers are respectively arranged on two side surfaces of the tin plating tank parallel to the conveying direction of the semiconductor metal, and the two second ultrasonic transducers are arranged in a staggered manner along the conveying direction of the semiconductor metal.

[0026] Optionally, the semiconductor metal tin plating equipment further includes a heating device arranged inside the tin plating tank, and the heating device is used for keeping warm or heating the molten tin liquid.

[0027] Optionally, the semiconductor metal tin plating equipment further includes a temperature sensor arranged inside the tin plating tank.

[0028] Optionally, the semiconductor metal tin plating equipment further includes liquid level sensors arranged inside the cleaning tank and the tin plating tank.

[0029] The beneficial effects of the semiconductor metal tin plating equipment provided by this application are as follows: Compared with the prior art, the semiconductor metal tin plating equipment of this application includes a box body, a tray, a conveying mechanism, a cleaning tank, a first ultrasonic mechanism, a tin plating tank, and a second ultrasonic mechanism. The conveying mechanism drives the semiconductor metal to move horizontally. The semiconductor metal at the first tensioning wheel mechanism is located in the cleaning tank, and the first ultrasonic mechanism provides ultrasonic waves to the cleaning tank to clean the semiconductor metal. Ultrasonic waves can effectively remove contaminants on the semiconductor metal, thereby improving the uniformity of tin plating. The semiconductor metal at the second tensioning wheel mechanism is located in the tin plating tank, and the second ultrasonic mechanism provides ultrasonic waves to the tin plating tank to remove the oxide layer on the surface of the semiconductor metal, further improving the uniformity of tin plating. Description of the Drawings

[0030] In order to more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of this application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0031] Figure 1 It is a schematic internal structure diagram of the semiconductor metal tin plating equipment provided by the embodiment of this application;

[0032] Figure 2 It is a schematic top view structure diagram of the semiconductor metal tin plating equipment provided by the embodiment of this application.

[0033] Explanation of the reference numerals in the drawings:

[0034] 1. Box body; 110. Feed inlet; 120. Discharge outlet; 2. Tray; 3. Conveying mechanism; 310. First guide wheel; 320. First tensioning wheel mechanism; 330. Second guide wheel; 340. Second tensioning wheel mechanism; 350. Tin scraping wheel mechanism; 360. Driving wheel mechanism; 361. Upper driving wheel; 362. Lower driving wheel; 363. Rotary driving mechanism; 4. Cleaning tank; 5. First ultrasonic mechanism; 510. First ultrasonic generator; 520. First ultrasonic transducer; 6. Tin plating tank; 7. Second ultrasonic mechanism; 710. Second ultrasonic generator; 720. Second ultrasonic transducer; 8. Heating device; 9. Semiconductor metal; 10. Distribution box. Detailed Embodiments

[0035] To make the above objects, features, and advantages of the present application more apparent and understandable, the following describes the specific embodiments of the present application in detail with reference to the accompanying drawings. Many specific details are set forth in the following description to facilitate a thorough understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the spirit of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.

[0036] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present application.

[0037] In addition, the terms "first" and "second" are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of the present application, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise specifically and clearly defined.

[0038] In the present application, unless otherwise clearly specified and limited, the terms "mounted", "connected", "coupled", "fixed", etc. should be construed in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the internal communication of two elements or the interaction relationship between two elements, unless otherwise clearly limited. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0039] In the present application, unless otherwise clearly specified and limited, the first feature being "on" or "under" the second feature may be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over", and "on top of" the second feature may be that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "below", and "beneath" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.

[0040] It should be noted that when an element is referred to as "fixed to" or "disposed on" another element, it can be directly on the other element or there may also be an intermediate element. When an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intermediate element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are only for illustrative purposes and do not represent the only implementation.

[0041] An embodiment of the present application provides a semiconductor metal tin plating device. Please refer to Figure 1 and Figure 2 , the semiconductor metal tin plating device includes a box body 1, a material tray 2, a conveying mechanism 3, a cleaning tank 4, a first ultrasonic mechanism 5, a tin plating tank 6 and a second ultrasonic mechanism 7. Feed ports 110 and discharge ports 120 are respectively arranged at both ends of the box body 1. The material tray 2 is rotatably arranged at the feed port 110 of the box body 1, and the material tray 2 is wound with semiconductor metal 9; the conveying mechanism 3 includes a first guide wheel 310, a first tensioning wheel mechanism 320, a second guide wheel 330, a second tensioning wheel mechanism 340, a tin scraping wheel mechanism 350 and a driving wheel mechanism 360 arranged in sequence from the feed port 110 to the discharge port 120. The driving wheel mechanism 360 clamps and drives the semiconductor metal 9 to move in the horizontal direction. The parts of the semiconductor metal 9 corresponding to the first tensioning wheel mechanism 320 and the second tensioning wheel mechanism 340 are bent downward; the cleaning tank 4 is arranged at the bottom of the first tensioning wheel mechanism 320, and there is a detergent in the cleaning tank 4. The semiconductor metal 9 at the first tensioning wheel mechanism 320 is in the cleaning tank 4; the first ultrasonic mechanism 5 is used to provide ultrasonic waves to the cleaning tank 4. The tin plating tank 6 is arranged at the bottom of the second tensioning wheel mechanism 340, and there is molten tin liquid in the tin plating tank 6. The semiconductor metal 9 at the second tensioning wheel mechanism 340 is in the tin plating tank 6, and the second ultrasonic mechanism 7 is used to provide ultrasonic waves to the tin plating tank 6.

[0042] Specifically, the second ultrasonic mechanism 7 generates high-frequency ultrasonic waves. By using the cavitation effect generated by the high-frequency ultrasonic waves in the molten tin liquid, the oxide layer on the surface of the semiconductor metal 9 immersed in the molten tin liquid is peeled and removed and carried away by the acoustic streaming, so that the tin liquid can adhere more firmly and evenly to the clean surface of the semiconductor metal 9.

[0043] Exemplarily, the semiconductor metal 9 is in a long strip shape.

[0044] In an embodiment of the present application, the semiconductor metal tinning equipment includes a box body 1, a material tray 2, a conveying mechanism 3, a cleaning tank 4, a first ultrasonic mechanism 5, a tinning tank 6 and a second ultrasonic mechanism 7. The conveying mechanism 3 drives the semiconductor metal 9 to move in a horizontal direction. The semiconductor metal 9 at the first tensioning wheel mechanism 320 is in the cleaning tank 4. The first ultrasonic mechanism 5 provides ultrasonic waves to the cleaning tank 4 to clean the semiconductor metal 9. Ultrasonic waves can effectively remove pollutants on the semiconductor metal 9, thereby improving the uniformity of tinning; the semiconductor metal 9 at the second tensioning wheel mechanism 340 is in the tinning tank 6, and the second ultrasonic mechanism 7 provides ultrasonic waves to the tinning tank 6 to remove the oxide layer on the surface of the semiconductor metal 9, further improving the uniformity of tinning.

[0045] On the other hand, the cleaning process of the semiconductor metal 9 and the tinning process are integrated together, which enhances the continuity of the process and improves the space utilization.

[0046] In one embodiment, please refer to Figure 1 and Figure 2 The driving wheel mechanism 360 includes an upper driving wheel 361, a lower driving wheel 362 and a rotating driving mechanism 363. The upper driving wheel 361 is rotatably disposed at the discharge port 120, and the lower driving wheel 362 is rotatably disposed directly below the upper driving wheel 361. The semiconductor metal 9 is squeezed and clamped between the upper driving wheel 361 and the lower driving wheel 362. The rotating driving mechanism 363 is used to drive the upper driving wheel 361 or the lower driving wheel 362 to rotate.

[0047] Exemplarily, the rotary drive mechanism 363 of the present application is connected with the lower drive wheel 362 by transmission, and the transmission method between the rotary drive mechanism 363 and the lower drive wheel 362 is gear transmission, belt transmission, or the lower drive wheel 362 is directly installed on the rotating shaft of the rotary drive mechanism 363, which is not limited here.

[0048] In one embodiment, the height of the upper driving wheel 361 and / or the lower driving wheel 362 is adjustable.

[0049] In one embodiment, the heights of the first tensioning wheel mechanism 320 , the second guide wheel 330 , and the second tensioning wheel mechanism 340 are adjustable.

[0050] In summary, the heights of the above-mentioned components are adjustable, and specifically, the height adjustment is achieved through a vertically arranged adjustment plate; it can not only achieve the effect of adapting to semiconductor metals 9 of different thicknesses, but also adjust the downward bending degree of the semiconductor metal 9.

[0051] In one embodiment, see Figure 1, the first ultrasonic mechanism 5 includes a first ultrasonic generator 510 and a first ultrasonic transducer 520. The first ultrasonic generator 510 is disposed inside the box body 1, and the first ultrasonic transducer 520 is electrically connected to the first ultrasonic generator 510 and disposed on the bottom surface of the cleaning tank 4.

[0052] In one embodiment, please refer to Figure 1 , the second ultrasonic mechanism 7 includes a second ultrasonic generator 710 and a second ultrasonic transducer 720. The second ultrasonic generator 710 is disposed inside the box body 1. The second ultrasonic transducer 720 is electrically connected to the second ultrasonic generator 710 and disposed on the side surface of the tin plating tank 6.

[0053] Specifically, the ultrasonic generator is a device that generates high-frequency electrical signals and converts them into ultrasonic energy, while the ultrasonic transducer is a device that converts ultrasonic energy into mechanical vibration.

[0054] In one embodiment, please refer to Figure 1 and Figure 2 , there are two second ultrasonic generators 710 and second ultrasonic transducers 720. The two second ultrasonic generators 710 and the first ultrasonic generator 510 are stacked in sequence on the outer side of the box body 1. The two second ultrasonic transducers 720 are respectively disposed on two side surfaces of the tin plating tank 6 parallel to the conveying direction of the semiconductor metal 9, and the two second ultrasonic transducers 720 are arranged in a staggered manner along the conveying direction of the semiconductor metal 9.

[0055] In one embodiment, please refer to Figure 1 , the semiconductor metal tin plating equipment further includes a heating device 8 disposed in the tin plating tank 6. The heating device 8 is used to keep warm or heat the molten tin liquid, so that the molten tin liquid always remains in a molten state to ensure the tin plating effect.

[0056] In one embodiment, the semiconductor metal tin plating equipment further includes a temperature sensor disposed in the tin plating tank 6.

[0057] In one embodiment, the semiconductor metal tin plating equipment further includes liquid level sensors disposed in the cleaning tank 4 and the tin plating tank 6.

[0058] In other embodiments, the semiconductor metal tin plating equipment further includes an alarm device. The alarm device is electrically connected to the temperature sensor and the liquid level sensor respectively. When the temperature is too high or the liquid level is too high, the alarm device emits an alarm signal to timely remind the staff of an abnormal situation.

[0059] In one embodiment, the semiconductor metal tin plating equipment further includes a liquid replenishing mechanism and a waste liquid collecting mechanism. The liquid replenishing mechanism is connected to the top of the cleaning tank 4 and is used to convey pure water into the cleaning tank 4. The waste liquid collecting mechanism is connected to the bottom of the cleaning tank 4 and is used to collect the waste liquid in the cleaning tank 4, so as to achieve the effect of timely replacing the waste liquid in the cleaning tank 4 and ensure a better cleaning effect.

[0060] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope described in this specification.

[0061] The above-described embodiments only represent several implementation manners of the present application. The description is relatively specific and detailed, but it should not be construed as a limitation on the scope of the patent application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the appended claims.

Claims

1. A semiconductor metal tin plating device, characterized in that, Comprising: A box body, with a feed inlet and a discharge outlet respectively arranged at both ends; A material tray, rotatably arranged at the feed inlet of the box body, and the material tray is wound with semiconductor metal; A conveying mechanism, including a first guide wheel, a first tensioning wheel mechanism, a second guide wheel, a second tensioning wheel mechanism, a tin scraping wheel mechanism and a driving wheel mechanism arranged in sequence from the feed inlet to the discharge outlet direction. The driving wheel mechanism clamps and drives the semiconductor metal to move horizontally, and the parts of the semiconductor metal corresponding to the first tensioning wheel mechanism and the second tensioning wheel mechanism are bent downward; A cleaning tank, arranged at the bottom of the first tensioning wheel mechanism, and there is detergent in the cleaning tank, and the semiconductor metal at the first tensioning wheel mechanism is in the cleaning tank; A first ultrasonic mechanism, used to provide ultrasonic waves to the cleaning tank; A tin plating tank, arranged at the bottom of the second tensioning wheel mechanism, and there is molten tin liquid in the tin plating tank, and the semiconductor metal at the second tensioning wheel mechanism is in the tin plating tank; and A second ultrasonic mechanism, used to provide ultrasonic waves to the tin plating tank.

2. The semiconductor metal tin plating equipment according to claim 1, characterized in that, The driving wheel mechanism includes: An upper driving wheel, rotatably arranged at the discharge outlet; A lower driving wheel, rotatably arranged directly below the upper driving wheel, and the semiconductor metal is squeezed and clamped between the upper driving wheel and the lower driving wheel; and A rotation driving mechanism, used to drive the upper driving wheel or the lower driving wheel to rotate.

3. The semiconductor metal tin plating equipment according to claim 2, characterized in that, The height of the upper driving wheel and / or the lower driving wheel is adjustable.

4. The semiconductor metal tin plating equipment according to claim 1, wherein, The heights of the first tensioning wheel mechanism, the second guide wheel and the second tensioning wheel mechanism are adjustable.

5. The semiconductor metal tin plating equipment according to any one of claims 1-4, characterized in that, The first ultrasonic mechanism includes: A first ultrasonic generator, arranged in the box body; and A first ultrasonic transducer, electrically connected to the first ultrasonic generator and arranged on the bottom surface of the cleaning tank.

6. The semiconductor metal tin plating equipment according to claim 5, wherein The second ultrasonic mechanism includes: A second ultrasonic generator, arranged in the box body; and A second ultrasonic transducer, electrically connected to the second ultrasonic generator and arranged on the side surface of the tin plating tank.

7. The semiconductor metal tin plating equipment according to claim 6, characterized in that, There are two second ultrasonic generators and the second ultrasonic transducers. The two second ultrasonic generators and the first ultrasonic generator are stacked in sequence on the outer side of the box body. The two second ultrasonic transducers are respectively arranged on two side surfaces of the tin plating tank parallel to the conveying direction of the semiconductor metal, and the two second ultrasonic transducers are arranged in a staggered manner along the conveying direction of the semiconductor metal.

8. The semiconductor metal tin plating equipment according to any one of claims 1-4, characterized in that, The semiconductor metal tin plating equipment further includes a heating device arranged in the tin plating tank, and the heating device is used to keep warm or heat the molten tin liquid.

9. The semiconductor metal tin plating equipment according to any one of claims 1-4, characterized in that The semiconductor metal tin plating equipment further includes a temperature sensor arranged in the tin plating tank.

10. The semiconductor metal tin plating equipment according to any one of claims 1-4, characterized in that, The semiconductor metal tin plating equipment further includes liquid level sensors arranged in the cleaning tank and the tin plating tank.

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