Chemical vapor deposition equipment
By introducing an annealing heating module into the chemical vapor deposition equipment, the thin film deposition and thermal annealing are integrated, solving the problems of heat waste and oxide formation caused by substrate transfer, and improving thin film quality and production efficiency.
Patent Information
- Application Number
- CN202423319091.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-31
- Publication Date
- 2026-01-09
- Estimated Expiration
- 2034-12-31
AI Technical Summary
Existing thin film deposition equipment requires transferring the substrate to other equipment for thermal annealing after thin film deposition, which leads to heat waste, waiting time loss, and possible oxide formation, affecting yield and film quality.
By introducing an annealing heating module into the chemical vapor deposition equipment, thin film deposition and thermal annealing of the substrate can be performed in the same equipment. Halogen lamps or lasers are used for rapid thermal annealing, and inert gas purging is combined to prevent surface deposition, thus integrating thin film deposition and thermal annealing functions.
It improves film quality and production efficiency, avoids the process of cooling and reheating and breaking the vacuum, and saves energy.
Smart Images
Figure CN223780363U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductor technology, and in particular to a chemical vapor deposition apparatus. Background Technology
[0002] In multi-pass thin-film processes for logic and memory devices, high-temperature thermal annealing is often required after thin-film deposition to control properties such as crystal phase and composition. For example, self-aligned silicides (such as TiSi) x It needs to be formed by rapidly thermally annealing a plated titanium film and a silicon substrate at high temperature. After tungsten is filled into the word lines by thin film deposition, it also needs to be annealed to further increase the grain size, reduce resistance, and remove residual fluorine.
[0003] However, while current thin-film deposition equipment already possesses the capability to heat the substrate, the temperatures required for thermal annealing are significantly higher. Therefore, the deposited substrate must be transferred to other equipment for thermal annealing. During the transfer of the substrate between reaction chambers or equipment, it needs to be cooled down and then heated to a higher temperature, sometimes even requiring vacuum breaking. This process results in heat waste and loss, as well as waiting time, impacting yield. Furthermore, vacuum breaking can lead to oxide formation on the substrate's surface, necessitating an additional oxide removal step. Utility Model Content
[0004] The purpose of this invention is to provide a chemical vapor deposition (CVD) device that enables thin film deposition and thermal annealing of substrates in a single device, thereby improving thin film quality and production efficiency.
[0005] To achieve the above objectives, this utility model is implemented through the following technical solution:
[0006] A chemical vapor deposition apparatus, comprising:
[0007] reaction chamber;
[0008] A base is located inside the reaction chamber. A heating module is provided inside the base to heat the substrate supported on the base to a first temperature. The substrate contains silicon.
[0009] A process gas supply device, located outside the reaction chamber, is used to supply process gas;
[0010] An air inlet device, connected to the process gas supply device, is used to introduce gas into the reaction chamber;
[0011] A vacuum extraction port is located at the bottom of the reaction chamber and is used to extract the gas inside the reaction chamber.
[0012] An annealing heating module, located outside the top wall of the reaction chamber, is used to radiate heat the substrate to a second temperature greater than the first temperature.
[0013] Optionally, the top wall of the reaction chamber is provided with an inert gas purging pipeline connected to an inert gas source, and the inert gas purging pipeline has an outlet facing the lower surface of the top wall of the reaction chamber.
[0014] Optionally, the annealing heating module includes a halogen lamp assembly, and the top wall of the reaction chamber is provided with a quartz window, through which the light emitted by the halogen lamp assembly illuminates the substrate.
[0015] Optionally, the annealing heating module includes a laser, and the top wall of the reaction chamber is provided with a temperature equalization cover, through which the light emitted by the laser is irradiated onto the substrate.
[0016] Optionally, the air intake device is disposed on the side wall of the reaction chamber.
[0017] The air intake device is an arc-shaped ring, which includes an air inlet on the outer side wall and several air outlets on the inner side wall. The air inlet is connected to the process gas supply device.
[0018] Optionally, the air outlets are evenly distributed along the circumference of the arc-shaped ring, and the air outlets gradually increase in size from the middle to both ends of the arc-shaped ring.
[0019] Optionally, the process gas supply device includes:
[0020] Multiple gas pipelines connect to various gas sources;
[0021] A gas mixing device, connected to the multi-gas pipeline and the gas inlet device, is used to mix several gases and then output them to the gas inlet device.
[0022] Optionally, a remote plasma generator is installed on the gas pipeline connected to the clean gas source.
[0023] Optionally, a temperature monitoring sensor is provided in the reaction chamber to monitor the temperature of the substrate.
[0024] Compared with the prior art, the present invention has the following advantages:
[0025] The chemical vapor deposition equipment provided by this utility model integrates chemical vapor deposition and thermal annealing functions into the same equipment, so that thermal annealing can be carried out in the same chamber during or after film deposition, avoiding the occurrence of cooling and reheating and vacuum breaking, improving the quality of the final film, increasing production efficiency, and saving energy. Attached Figure Description
[0026] To more clearly illustrate the technical solution of this utility model, the drawings used in the description will be briefly introduced below. Obviously, the drawings in the following description are one embodiment of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort:
[0027] Figure 1 A structural diagram of a chemical vapor deposition apparatus provided in an embodiment of this utility model;
[0028] Figure 2 A structural diagram of a chemical vapor deposition apparatus provided in another embodiment of this utility model;
[0029] Figure 3 This is a structural diagram of the air intake device;
[0030] Figure 4 A flowchart illustrating the use of the chemical vapor deposition equipment provided by this utility model. Detailed Implementation
[0031] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, further illustrates the proposed solution of this utility model. The advantages and features of this utility model will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, intended only to facilitate and clearly illustrate the embodiments of this utility model. Please refer to the drawings to make the objectives, features, and advantages of this utility model more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes to aid those skilled in the art and are not intended to limit the implementation conditions of this utility model. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by this utility model, should still fall within the scope of the technical content disclosed in this utility model.
[0032] like Figure 1 and Figure 2As shown, this embodiment provides a chemical vapor deposition (CVD) apparatus with a thermal annealing function. The CVD apparatus includes: a reaction chamber 100; a base 110 located inside the reaction chamber 100, wherein a heating module (not shown) is disposed within the base 110 for heating the substrate W supported on the base 110 to a first temperature; the substrate contains silicon; the base 110 is liftable and can rotate around its own axis; and a process gas supply device 120 located outside the reaction chamber 100 for supplying process gas, the process gas including at least... The reaction chamber 100 contains a precursor gas, a reducing gas, and a purge gas; an inlet device 130 connected to the process gas supply device 120 for introducing gas into the reaction chamber 100 to perform thin film deposition on the substrate W; a vacuum extraction port 140 located at the bottom of the reaction chamber 100 for extracting gas from the reaction chamber 100; and an annealing heating module 150 located outside the top wall of the reaction chamber 100 for radiative heating of the substrate W to a second temperature greater than the first temperature to perform rapid thermal annealing on the substrate W.
[0033] Specifically, the annealing heating module 150 faces the substrate W. When thermal annealing is required, the annealing heating module 150 is activated, and the radiant heat it generates can rapidly heat the substrate W. In one embodiment, such as... Figure 1 As shown, the annealing heating module 150 includes a halogen lamp assembly 151, and a quartz window 101 is provided on the top wall of the reaction chamber 100. The quartz window 101 separates the halogen lamp assembly 151 from the interior of the reaction chamber 100 and allows the light emitted by the halogen lamp assembly 151 to pass through and illuminate the substrate W. Using the halogen lamp assembly 151, rapid thermal annealing on the order of seconds can be achieved.
[0034] In another embodiment, such as Figure 2 As shown, the annealing heating module 150 includes a laser 152. A temperature equalization hood 102 is provided on the top wall of the reaction chamber, separating the laser 152 from the interior of the reaction chamber 100. The laser emitted by the laser 152 can be uniformly transmitted to the substrate W through the temperature equalization hood 102, thereby improving the heating efficiency of the substrate W. The laser 152 can be a vertical-cavity surface-emitting laser to achieve millisecond-level rapid thermal annealing.
[0035] like Figure 1 and Figure 2As shown, the top wall of the reaction chamber is provided with an inert gas purging pipe 160, which is connected to an inert gas source. The inert gas purging pipe 160 has an outlet facing the lower surface of the top wall of the reaction chamber 100. Thus, during the thin film deposition process, the quartz window 101 or the temperature homogenizer 102 at the top of the reaction chamber 100 can be purged through the inert gas purging pipe 160 to prevent the deposition of thin films on the surface of the quartz window 101 or the temperature homogenizer 102, thereby ensuring the heating effect of the annealing heating module 150 on the substrate W.
[0036] like Figure 1 and Figure 2 As shown, the process gas supply device 120 includes: multiple gas pipelines (121a, 121b, 121c, 121d) corresponding to various gas sources; and a gas mixing device 122, connected to the multiple gas pipelines and the gas inlet device 130, used to mix several gases and output them to the gas inlet device 130, to ensure that different types of reaction gases are fully and uniformly mixed before being introduced into the reaction chamber 100, so as to achieve uniform deposition. It can also precisely control the proportion of various gases introduced into the reaction chamber 100 to adjust the composition, structure, and properties of the final deposited film. Gas pipeline 121a can be connected to a precursor gas source, which is typically an organometallic compound, a halide, an oxide, or other chemical substance. Gas pipeline 121b can be connected to a reducing gas source, which is typically hydrogen, silane, borane, or ammonia. Gas line 121c can be connected to a carrier gas source, typically an inert gas (such as Ar), used to deliver the reactant gas into the reaction chamber 100 to maintain the required atmosphere. Gas line 121d can be connected to a cleaning gas source, used to remove reactants deposited on the inner wall of the reaction chamber 100 and other components; for example, it can be NF3, HF, etc. A remote plasma source (RPS) 123 can be installed on gas line 121d to generate a plasma state from the cleaning gas under the action of radio frequency or microwave energy to clean the interior of the reaction chamber 100.
[0037] The process gas supply device 120 supplies gas into the reaction chamber 100 through the inlet device 130. In this embodiment, the process gas is input via a side inlet. The inlet device 130 is located on the side wall of the reaction chamber 100. Figure 3As shown, the air intake device 130 is an arc-shaped ring 131. The arc-shaped ring 131 includes an air intake hole 132 located on the outer side wall and a plurality of air outlet holes 133 located on the inner side wall. The air intake hole 132 is connected to the process gas supply device 130. The gas supplied by the process gas supply device 130 enters the diffusion cavity inside the arc-shaped ring 131 through the air intake hole 132. After being uniformly diffused in the diffusion cavity, the gas is discharged from the air outlet holes 133 and enters the reaction chamber 100. The air outlet holes 133 are uniformly distributed along the circumference of the arc-shaped ring 131, and the air outlet holes 133 gradually increase in size from the middle to both ends of the arc-shaped ring 131, thereby improving the uniformity of the gas entering the reaction chamber 100.
[0038] In other embodiments, the process gas can also be introduced by top air intake, with the air intake device 130 disposed at the top of the reaction chamber 100, opposite to the base.
[0039] In this embodiment, a temperature monitoring sensor 170 is also provided inside the reaction chamber 100 to monitor the temperature of the substrate W. Specifically, the temperature monitoring sensor 170 is disposed on the side wall of the reaction chamber 100 opposite to the air inlet device 130. The temperature monitoring sensor 170 can be wirelessly connected to an external controller to provide the measured temperature value to the controller, so that the controller can adjust the heating power of the annealing heating module 150 and / or the heating module inside the base 110.
[0040] The usage process of the chemical vapor deposition equipment provided by this utility model is as follows: Figure 4 As shown, the following description will take the formation of self-aligned titanium silicon silicide (TiSix) as an example.
[0041] First, the substrate W is heated to a first temperature (100℃~500℃) by the heating module inside the base 110, and the base 110 is raised to a position close to the air inlet device 130. Then, a reaction gas and a carrier gas are introduced to deposit a thin film on the surface of the substrate W. For example, the introduced precursor gas is TiCl4, the reducing gas is H2, and it is transported by the carrier gas Ar. A titanium film is deposited by CVD (Chemical Vapor Deposition) or ALD (Atomic Layer Deposition). The annealing heating module 150 is turned on to heat the substrate W to a second temperature (600℃~1100℃) for 1s~10s to form a titanium silicon compound. An inert gas is introduced to cool the substrate W down to the first temperature. The above steps can be repeated to control the thickness of the titanium silicon film and the concentration of titanium in the metal silicide. During the above process, the temperature monitoring sensor 170 monitors the temperature of the substrate W in real time to adjust the heating power of the annealing heating module 150 and / or the heating module inside the base 110. After the process is completed, the base 110 is lowered to its initial position, the substrate W is sent out of the reaction chamber 100, and the remote plasma generator 123 is turned on to introduce cleaning gas into the reaction chamber 100 to clean the deposits in the reaction chamber 100.
[0042] In summary, the chemical vapor deposition equipment provided by this utility model integrates the chemical vapor deposition function and the thermal annealing function into the same equipment, so that the thermal annealing process can be carried out in the same cavity during or after the film deposition, avoiding the occurrence of cooling and reheating and vacuum breaking, improving the quality of the final film, increasing production efficiency, and saving energy.
[0043] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.
[0044] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above content. Therefore, the scope of protection of the present invention should be defined by the appended claims.
Claims
1. A chemical vapor deposition apparatus, characterized in that, The chemical vapor deposition equipment includes a thermal annealing function and comprises: reaction chamber; A base is located inside the reaction chamber. A heating module is provided inside the base to heat the substrate supported on the base to a first temperature. The substrate contains silicon. A process gas supply device, located outside the reaction chamber, is used to supply process gas; An air inlet device, connected to the process gas supply device, is used to introduce gas into the reaction chamber; A vacuum extraction port is located at the bottom of the reaction chamber and is used to extract the gas inside the reaction chamber. An annealing heating module, located outside the top wall of the reaction chamber, is used to radiate heat the substrate to a second temperature greater than the first temperature.
2. The chemical vapor deposition apparatus as described in claim 1, characterized in that, The top wall of the reaction chamber is provided with an inert gas purging pipe, which is connected to an inert gas source. The inert gas purging pipe has an outlet, which faces the lower surface of the top wall of the reaction chamber.
3. The chemical vapor deposition apparatus as described in claim 1, characterized in that, The annealing heating module includes a halogen lamp assembly, and the top wall of the reaction chamber is provided with a quartz window, through which the light emitted by the halogen lamp assembly illuminates the substrate.
4. The chemical vapor deposition apparatus as described in claim 1, characterized in that, The annealing heating module includes a laser, and a temperature equalization cover is provided on the top wall of the reaction chamber. The light emitted by the laser is irradiated onto the substrate through the temperature equalization cover.
5. The chemical vapor deposition apparatus as described in claim 1, characterized in that, The air intake device is located on the side wall of the reaction chamber.
6. The chemical vapor deposition apparatus as described in claim 5, characterized in that, The air intake device is an arc-shaped ring, which includes an air inlet on the outer side wall and several air outlets on the inner side wall. The air inlet is connected to the process gas supply device.
7. The chemical vapor deposition apparatus as described in claim 6, characterized in that, The air vents are evenly distributed along the circumference of the arc-shaped ring, and the air vents gradually increase in size from the middle to both ends of the arc-shaped ring.
8. The chemical vapor deposition apparatus as described in claim 1, characterized in that, The process gas supply device includes: Multiple gas pipelines connect to various gas sources; A gas mixing device, connected to the multi-gas pipeline and the gas inlet device, is used to mix several gases and then output them to the gas inlet device.
9. The chemical vapor deposition apparatus as described in claim 8, characterized in that, A remote plasma generator is installed on the gas pipeline connected to the clean gas source.
10. The chemical vapor deposition apparatus as described in claim 1, characterized in that, The reaction chamber is equipped with a temperature monitoring sensor to monitor the temperature of the substrate.