Semiconductor silicon carbide coating device and system and readable storage medium

Abstract

The utility model discloses a semiconductor silicon carbide coating device and system and a readable storage medium, and belongs to the field of semiconductor coatings. The problems that existing silicon carbide coating equipment is complex in operation, and various by-products generated after decomposition severely affect the quality of the silicon carbide coating are solved. According to the technical scheme adopted for solving the technical problem, the coating device comprises a coating cavity and a control system, an MTS gas conveying system is connected to the side of an MTS decomposition area in the coating cavity, a tail gas treatment system is connected to the side of an electric field regulation and control deposition area in the coating cavity, a plasma reaction area is further arranged between the MTS decomposition area and the electric field regulation and control deposition area in the coating cavity, and the control system is connected to the control system. The electric field regulation and control deposition area is provided with a substrate loading mechanism and a voltage source, the negative electrode of the voltage source is connected to the substrate loading mechanism, the positive electrode of the voltage source is connected to the side wall of the coating cavity, so that a potential difference is formed between the substrate loading mechanism and the side wall of the coating cavity, and the plasma reaction area is provided with a radio frequency electric field generating device; the device is applied to the silicon carbide coating.

Description

TECHNICAL FIELD

[0001] The utility model provides a kind of semiconductor silicon carbide coating device, system and readable storage medium, belong to semiconductor coating technical field. BACKGROUND

[0002] SiC CVD equipment production silicon carbide coating product has wide application in multiple high-tech fields, and is mainly used for coating preparation of core components of silicon-based semiconductor crystal pulling equipment, silicon and silicon carbide chip oxidation equipment, annealing equipment, silicon epitaxy, silicon carbide epitaxy, MOCVD, ion implantation, etching machine equipment etc. Silicon carbide coating can improve the heat resistance, corrosion resistance and wear resistance of device, thereby prolonging the service life of device and improving its performance. When silicon carbide coating equipment is coating substrate, it needs to be pretreated, mixed with MTS and H2 and then introduced into reaction chamber, and MTS is decomposed at a certain temperature and pressure, and the decomposition formula is as follows:

[0003] CH3SiCl3(g)+H2(g)→SiC(g)+3HCl(g)+CH4(g).

[0004] In order to grow qualified β-type SiC on the surface of substrate material, the following influencing factors need to be controlled in the process of SiC CVD equipment production silicon carbide coating product: thermal field reaction temperature uniformity, i.e. axial temperature difference control of large-size chamber (such as 12-inch wafer equipment), selection of high-temperature flow field pressure, uniformity of coating thickness, purity of coating product, uniformity of high-temperature gas flow field, proportion relationship of MTS and H2 mixed gas flow rate, structure of mixed gas inlet cavity, appearance structure and position of mixed gas inlet nozzle, structure and relative position of substrate tooling, control of substrate tooling rotation speed, structure form of exhaust cavity, corrosion of equipment and pollution of coating by byproduct HCl (g), control of reaction gas residence time on substrate surface, etc. In addition, byproducts such as SiCl2 (g), Si (s), C (s), SiO2 (s), CO (g) etc. need to be controlled in the process of MTS decomposition, which seriously affect product technical indexes such as surface coating purity, uniformity, silicon-carbon ratio, grain size, crystal type and hardness of SiC coating.

[0005] Therefore, it is urgent to design a silicon carbide coating device that can simplify the operation process and avoid the influence of other byproducts on coating performance indexes when growing silicon carbide coating on substrate. UTILITY MODEL CONTENTS

[0006] The utility model discloses in order to solve the technical problem of the existing silicon carbide coating equipment operation complex and the decomposition of various byproducts seriously influence silicon carbide coating quality, proposes a kind of semiconductor silicon carbide coating device of directional movement SiC, purpose is to improve the uniformity and purity of the silicon carbide coating deposited on matrix by the improvement of the hardware structure of silicon carbide coating equipment or the combination connection of hardware module and / or circuit.

[0007] In order to solve the above technical problems, the utility model adopts the technical scheme of a kind of semiconductor silicon carbide coating device, including coating cavity and control system, MTS decomposition area side in the coating cavity is connected with MTS gas delivery system, the side of electric field regulation and control deposition area in the coating cavity is connected with tail gas treatment system, MTS decomposition area and electric field regulation and control deposition area between the coating cavity are also provided with plasma reaction zone;

[0008] The electric field regulation and control deposition area is provided with a substrate loading mechanism and a voltage source, the negative electrode of the voltage source is connected to the substrate loading mechanism, and the positive electrode of the voltage source is connected to the side wall of the coating cavity, so that a potential difference is formed between the substrate loading mechanism and the side wall of the coating cavity.

[0009] The plasma reaction zone is provided with a radio frequency electric field generating device.

[0010] Further, the side wall end of the coating cavity is provided with a heat preservation system, the chamber of the coating cavity is provided with a heating system and a temperature measuring system, and the heating system and the temperature measuring system are electrically connected to the control system.

[0011] Further, a vacuum system is further provided between the coating cavity and the tail gas treatment system.

[0012] Further, the radio frequency electric field generating device is a radio frequency power supply or a microwave power supply.

[0013] Further, the substrate loading mechanism is connected to the output shaft of the motor.

[0014] Further, the coating cavity is further connected with a vacuum gauge, and the vacuum gauge is arranged in the MTS decomposition area.

[0015] A semiconductor silicon carbide coating system includes the above-mentioned semiconductor silicon carbide coating device.

[0016] A readable storage medium has machine executable instructions stored thereon, which are executed by a processor to use the above-mentioned semiconductor silicon carbide coating system.

[0017] The utility model discloses relative to prior art has the beneficial effect of:

[0018] 1. The utility model discloses a voltage source is set up, connects the negative pole of voltage source on the base body loading mechanism, connects the positive pole of voltage source on the lateral wall of coating cavity, forms the electric field in the electric field regulation and control deposition area, under the guidance of electric field, the deposition direction of charged plasma can be effectively controlled, makes the thickness difference of coating edge and center on the base body reduce, avoids the problem that silicon carbide coating thickness is uneven,

[0019] 2, the Si of positive electricity + And C + Under the action of electric field, the base body loading mechanism to which the negative voltage is applied moves, and a uniform silicon carbide coating is formed on the surface of the base body. Negative ions are adsorbed to the side wall at the top of the coating cavity to which a positive voltage is applied under the action of the electric field. The generated solid by-products are discharged after being pumped out of the coating cavity by the vacuum pump in the vacuum system. The coating of silicon carbide on the base body avoids the interference of other free electrons, effectively improves the purity of the silicon carbide coating, and ensures the silicon-carbon ratio.

[0020] 3. The radio frequency electric field generated by the radio frequency electric field generating device of the plasma reaction zone can activate the plasma. The activated plasma can promote the bonding force between silicon carbide molecules, reduce the porosity of the silicon carbide coating, and improve the hardness and density of the silicon carbide coating.

[0021] 4. The base body loading mechanism can rotate under the drive of the motor. According to the different shapes of the base body, the angle position between the base body loading mechanism and the plasma reaction zone can be adjusted to meet the demand of preparing silicon carbide coating on the special-shaped base body.

[0022] 5. The MTS decomposition zone, the plasma reaction zone and the electric field regulation and control deposition zone are integrated in the coating cavity. Under the action of the electric field, the parameters required to control the silicon carbide coating device can be reduced, that is, the purpose of depositing silicon carbide coating on the base body can be achieved. BRIEF DESCRIPTION OF DRAWINGS

[0023] The utility model will be further described in connection with the drawings:

[0024] Figure 1 The structure of the utility model is shown in the figure;

[0025] In the figure: 1 is the coating cavity, 2 is the MTS gas delivery system, 3 is the MTS decomposition zone, 4 is the plasma reaction zone, 5 is the electric field regulation and control deposition zone, 6 is the tail gas treatment system, 7 is the base body loading mechanism, 8 is the radio frequency electric field generating device, 9 is the heat preservation system, 10 is the heating system, 11 is the temperature measurement system, 12 is the vacuum system, 13 is the vacuum gauge, 14 is the base body. DETAILED DESCRIPTION

[0026] In the description of the utility model, it is necessary to understand that the orientation or positional relationship indicated by the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like is a relative orientation or positional relationship, and is only for the convenience of describing the utility model and simplifying the description, and does not indicate or imply that the device or element indicated must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the utility model. In addition, the terms "first", "second" and the like are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features limited by "first", "second" and the like can explicitly or implicitly include one or more features. In the description of the utility model, the meaning of "a plurality of" is two or more, unless otherwise specified.

[0027] In the description of the utility model, it should be explained that, unless otherwise specified and limited, the terms "mounting", "connection", "connection" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected, it can be mechanically connected, or it can be electrically connected, it can be directly connected, or it can be indirectly connected through an intermediate medium, it can be the communication inside two elements. For ordinary skilled in the art, the specific meaning of the above terms in the utility model can be understood through specific circumstances.

[0028] As shown in Figure 1 The utility model provides a kind of semiconductor silicon carbide coating device, including coating cavity 1 and control system, trichloromethylsilane (hereinafter referred to as "MTS") decomposition zone side in coating cavity 1 is connected with MTS gas delivery system 2, exhaust treatment system 6 is connected with electric field regulation and control deposition area 5 side in coating cavity 1, MTS decomposition zone 3 and electric field regulation and control deposition area 5 between in coating cavity 1 still be provided with plasma reaction zone 4.

[0029] Specifically, the MTS decomposition zone 3, the plasma reaction zone 4 and the electric field regulated deposition zone 5 are sequentially distributed in the chamber of the coating cavity 1. The MTS decomposition zone 3 is located at the left side of the coating cavity 1 and is in communication with the MTS gas delivery system 2. In the MTS gas delivery system 2, the MTS liquid is converted into MTS gas by a bubbling tank or an evaporator and then enters the MTS decomposition zone 3 by the carrying of the carrier gas. The control system controls the heating system 10 and the temperature measuring system 11 to ensure that the temperature of the MTS decomposition zone 3 can decompose the MTS gas. The MTS gas is decomposed into SiC gas under the action of high temperature, and contains a plurality of by-products, including HCl (g), CH4 (g), SiCl2 (g), CCl2 (g), Si (s), C (s), SiO2 (s) and the like. The decomposed SiC gas and its by-products are introduced into the plasma reaction zone 4. The plasma reaction zone 4 is provided with a radio frequency electric field generating device 8. The radio frequency electric field generating device 8 is a radio frequency power supply or a microwave power supply. The radio frequency electric field generating device 8 converts the SiC gas and its gas by-products into charged plasma after generating a radio frequency electric field. Taking the SiCl2 (g) and CCl2 (g) by-products as examples, the conversion process is as follows:

[0030] SiCl2 + e - → Si + + 2Cl - + e - ;

[0031] CCl2 + e - → C + + 2Cl - + e - ;

[0032] Therefore, the plasma includes positively charged Si + , C + and negative ions. The negative ions are mainly Cl - .

[0033] The electric field regulated deposition zone 5 is provided with a substrate loading mechanism 7 and a voltage source. The substrate loading mechanism 7 is provided with a substrate 14. The negative electrode of the voltage source is connected to the substrate loading mechanism 7, and the positive electrode of the voltage source is connected to the side wall of the coating cavity 1, so that a potential difference is formed between the substrate loading mechanism 7 and the side wall of the coating cavity 1.

[0034] Specifically, a negative voltage is applied to the back of the substrate loading mechanism 7. The positively charged Si + and C +Accelerated by an electric field, the particles are directionally adsorbed onto the surface of the substrate 14 to be coated, forming a silicon carbide coating. The substrate loading mechanism 7 is fixedly connected to the output shaft of a motor, which drives the mechanism to rotate, adjusting the relative angle and position between the surface to be coated on the substrate 14 and the plasma reaction zone 4 to meet the coating requirements. A positive voltage is applied to the sidewall of the coating chamber 1, specifically to the top sidewall of the chamber, causing negative ions to be adsorbed onto it. Solid byproducts generated after the decomposition of MTS gas are extracted from the coating chamber 1 by a vacuum pump in the vacuum system 12 and discharged. Thus, interference from other free electrons is avoided during the coating of the silicon carbide coating on the substrate 14, improving the quality of the silicon carbide coating.

[0035] The electric field controlled deposition zone 5 is located on the right side of the coating chamber 1. The electric field controlled deposition zone 5 is connected to the exhaust gas treatment system 6 through the vacuum system 12 to discharge the solid by-products in the coating chamber 1.

[0036] A heat preservation system 9 is installed on the side wall of the coating chamber 1. A heating system 10 and a temperature measuring system 11 are installed inside the coating chamber 1. Both the heating system 10 and the temperature measuring system 11 are electrically connected to the control system. After receiving the temperature signal collected by the temperature measuring system 11, the control system transmits it to the heating system 10. The heating system 10 adjusts various heating parameters according to the temperature signal to achieve the temperature environment required for preparing the silicon carbide coating. The setting of various parameters for the temperature environment required for preparing the silicon carbide coating is a conventional technique in the art and will not be described in detail here.

[0037] The coating chamber 1 is also connected to a vacuum gauge 13, which is installed in the MTS decomposition zone 3.

[0038] The present invention provides a semiconductor silicon carbide coating system, including the above-mentioned semiconductor silicon carbide coating device.

[0039] This invention provides a readable storage medium storing machine-executable instructions, which, when executed by a processor, utilize the aforementioned semiconductor silicon carbide coating system.

[0040] The working principle of this utility model is as follows:

[0041] After being placed into the MTS gas delivery system 2, the MTS liquid is converted into MTS gas. The MTS gas is then carried by a carrier gas into the MTS decomposition zone 3 within the coating chamber 1. In the MTS decomposition zone 3, the MTS gas is decomposed into SiC gas, while simultaneously generating various byproducts, including gaseous and solid byproducts. Under the influence of the radio frequency electric field generated by the radio frequency electric field generator 8, the gaseous byproducts and SiC gas are converted into charged plasma. The plasma includes positively charged SiC atoms. +and C + and negative ions, positively charged Si + and C + Under the action of the electric field, the ions move directionally to the substrate loading mechanism 7 where a negative voltage is applied, and form a uniform silicon carbide coating on the surface of the substrate 14. The negative ions are adsorbed onto the side wall at the top of the coating chamber 1 where a positive voltage is applied under the action of the electric field. The generated solid byproducts are extracted from the coating chamber 1 by the vacuum pump in the vacuum system 12 and discharged.

[0042] Regarding the specific structure of this utility model, it should be noted that the connection relationships between the various component modules adopted in this utility model are definite and achievable. Except as specifically described in the embodiments, their specific connection relationships can bring about corresponding technical effects and solve the technical problems proposed by this utility model without relying on the execution of corresponding software programs. The models of the components, modules, and specific components appearing in this utility model, the connection methods between them, and the conventional usage methods and expected technical effects brought about by the above-mentioned technical features, unless specifically described, are all publicly disclosed content in patents, journal articles, technical manuals, technical dictionaries, and textbooks that can be obtained by those skilled in the art before the application date, or belong to conventional technology, common knowledge, and other existing technologies in this field. There is no need to elaborate, which makes the technical solution provided in this case clear, complete, and achievable, and can reproduce or obtain corresponding physical products based on this technical means.

[0043] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this utility model, and are not intended to limit it. Although the utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this utility model.

Claims

1. A semiconductor silicon carbide coating device, characterized in that, It includes a coating chamber (1) and a control system. The MTS decomposition zone (3) in the coating chamber (1) is connected to an MTS gas delivery system (2). The electric field controlled deposition zone (5) in the coating chamber (1) is connected to a tail gas treatment system (6). A plasma reaction zone (4) is also provided between the MTS decomposition zone (3) and the electric field controlled deposition zone (5) in the coating chamber (1). The electric field controlled deposition region (5) is provided with a substrate loading mechanism (7) and a voltage source. The negative terminal of the voltage source is connected to the substrate loading mechanism (7), and the positive terminal of the voltage source is connected to the side wall of the coating cavity (1), so that a potential difference is formed between the substrate loading mechanism (7) and the side wall of the coating cavity (1). The plasma reaction zone (4) is equipped with a radio frequency electric field generator (8).

2. The semiconductor silicon carbide coating apparatus according to claim 1, characterized in that, The coating chamber (1) is provided with a heat preservation system (9) on its side wall end. The coating chamber (1) is provided with a heating system (10) and a temperature measuring system (11). The heating system (10) and the temperature measuring system (11) are both electrically connected to the control system.

3. The semiconductor silicon carbide coating device according to claim 1, characterized in that, A vacuum system (12) is also provided between the coating chamber (1) and the exhaust gas treatment system (6).

4. The semiconductor silicon carbide coating apparatus according to claim 1, characterized in that, The radio frequency electric field generating device (8) is a radio frequency power supply or a microwave power supply.

5. The semiconductor silicon carbide coating apparatus according to claim 1, characterized in that, The base loading mechanism (7) is connected to the output shaft of the motor.

6. The semiconductor silicon carbide coating apparatus according to claim 1, characterized in that, The coating chamber (1) is also connected to a vacuum gauge (13), which is located in the MTS decomposition zone (3).

7. A semiconductor silicon carbide coating system, characterized in that, Includes a semiconductor silicon carbide coating apparatus as described in any one of claims 1 to 6.

8. A readable storage medium, characterized in that, The readable storage medium stores machine-executable instructions, which, when executed by a processor, utilize the semiconductor silicon carbide coating system of claim 7.

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