Vacuum interconnected chemical vapor deposition apparatus

Abstract

The utility model discloses a kind of vacuum interconnection chemical vapor deposition devices, including vacuum pipeline A, ordinary pipeline B and ordinary pipeline C, the vacuum pipeline A, ordinary pipeline B and ordinary pipeline C are arranged in parallel, and vacuum pipeline A, ordinary pipeline B and ordinary pipeline C are all provided with three-way joint, and every three-way joint on ordinary pipeline B is connected with one gas path summary device by one connecting pipeline E, another inlet on gas path summary device is communicated with ordinary pipeline C by connecting pipeline F, every gas path summary device is connected with one vapor deposition equipment by pipeline, the outlet of vapor deposition equipment is connected with the three-way joint on vacuum pipeline A by connecting pipeline D, one of which vapor deposition equipment is provided with vacuum pump, the device can improve experimental efficiency, save experimental space and reduce the effect of cost, while guarantee the quality of growth film material.

Description

Technical Field

[0001] This utility model relates to the field of chemical vapor deposition technology for two-dimensional thin film materials, specifically a vacuum interconnected chemical vapor deposition device. Background Technology

[0002] The growth quality of two-dimensional thin film materials is highly dependent on the cleanliness of the environment. A clean growth environment is more conducive to the preparation of high-quality thin film materials. Therefore, chemical vapor deposition (CVD) devices with vacuum conditions are particularly important. The vacuum system is mainly used to remove air and impurities from the entire CVD device, thereby providing clean growth conditions for the growth of two-dimensional thin film materials. However, vacuum CVD systems are expensive, occupy a large space, and have high requirements for the external installation environment. Therefore, it is impossible to install more vacuum equipment in experimental environments with limited space. Based on the above problems and challenges, we believe that developing a CVD device with vacuum interconnection can effectively improve the preparation quality of two-dimensional thin film materials and reduce production costs. Utility Model Content

[0003] The technical problem to be solved by this invention is to overcome the existing defects and provide a vacuum interconnected chemical vapor deposition device that can improve the cleanliness of the reaction process and avoid contamination of the sample by impurity gases in the air during the growth process, thereby improving the quality of two-dimensional thin film materials prepared by chemical vapor deposition and significantly reducing production costs. This can effectively solve the problems in the background art.

[0004] To achieve the above objectives, this utility model provides the following technical solution: a vacuum interconnected chemical vapor deposition apparatus, comprising a vacuum pipeline A, a conventional pipeline B, and a conventional pipeline C, wherein the vacuum pipeline A, conventional pipeline B, and conventional pipeline C are arranged in parallel, and each of the vacuum pipeline A, conventional pipeline B, and conventional pipeline C is provided with a tee connector. Each tee connector on conventional pipeline B is connected to a gas convergence device via a connecting pipeline E. Another inlet of the gas convergence device is connected to conventional pipeline C via a connecting pipeline F. Each gas convergence device is connected via a pipeline... There is a vapor deposition equipment. The outlet of the vapor deposition equipment is connected to a tee connector on vacuum line A via connecting pipe D. One of the vapor deposition equipment has a built-in vacuum pump, which is connected to both the vapor deposition equipment and vacuum line A via Y-type pipes. This vapor deposition equipment is not connected to vacuum line A. The outlet of the vapor deposition equipment is connected to a tail gas treatment device, and the inlet of the tail gas treatment device has a valve four. A valve five, a pressure reducing valve, and a gas flow meter are connected in series on connecting pipes E and F. A valve six is ​​connected in series on connecting pipe D.

[0005] Furthermore, the vapor deposition equipment includes a furnace body and a quartz tube, the quartz tube being located inside the furnace body, and the inlet of the quartz tube being connected to a gas flow collection device.

[0006] Furthermore, a valve three is provided at the inlet of the quartz tube.

[0007] Furthermore, valve 2 and valve 1 are respectively installed on the pipelines connecting the vacuum pump to vacuum pipeline A and the vapor deposition equipment. Beneficial effects

[0008] Compared with the prior art, the beneficial effects of this utility model are: multiple ordinary chemical vapor deposition devices are connected to form a simple and low-cost vacuum interconnected chemical vapor deposition system by sharing the vacuum pump and vacuum pipeline A of the vacuum chemical vapor deposition device. This can effectively improve the cleanliness of the two-dimensional material growth environment, thereby improving the quality of two-dimensional thin film materials prepared by chemical vapor deposition. Furthermore, by designing a shared vacuum pipeline A, equipment costs and experimental space can be greatly saved, while improving the utilization efficiency of the vacuum pump.

[0009] This invention effectively solves the problems of cleanliness and vacuum environment acquisition in the growth space of two-dimensional materials, and provides a universal, simple, low-cost high-quality growth environment, which is conducive to the growth of high-quality two-dimensional materials. Attached Figure Description

[0010] Figure 1 This is a schematic diagram of the structure of this utility model.

[0011] In the diagram: 1 Vacuum pipeline A, 2 Ordinary pipeline B, 3 Ordinary pipeline C, 4 Connecting pipeline D, 5 Connecting pipeline E, 6 Connecting pipeline F, 7 Gas convergence device, 8 Valve 1, 9 Valve 2, 10 Valve 3, 11 Vacuum pump, 12 Furnace body, 13 Quartz tube, 14 Tail gas treatment device, 15 Valve 4, 16 Valve 5, 17 Valve 6, 18 Gas flow meter, 19 Pressure reducing valve. Detailed Implementation

[0012] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0013] Please see Figure 1This utility model provides a technical solution: a vacuum interconnected chemical vapor deposition apparatus, including a vacuum pipeline A1, a conventional pipeline B2, and a conventional pipeline C3. The vacuum pipeline A1, conventional pipeline B2, and conventional pipeline C3 are arranged in parallel, and each of these pipelines is equipped with a tee connector. Each tee connector on conventional pipeline B2 is connected to a gas convergence device 7 via a connecting pipeline E5. Another inlet of the gas convergence device 7 is connected to conventional pipeline C3 via a connecting pipeline F6. Each gas convergence device 7 is connected to a vapor deposition device via a pipeline. The outlet of the vapor deposition device is connected to a tee connector on the vacuum pipeline A1 via a connecting pipeline D4. One of the vapor deposition devices has a built-in vacuum pump 11, which is connected to both the vapor deposition device and the vacuum pipeline A1 via Y-shaped pipelines. This vapor deposition device is not connected to the vacuum pipeline A1, while the gas... The outlet of the phase deposition equipment is connected to a tail gas treatment device 14, and the inlet of the tail gas treatment device 14 is equipped with a valve 15. A valve 16, a pressure reducing valve 19, and a gas flow meter 18 are connected in series on the connecting pipes E5 and F6. A valve 17 is connected in series on the connecting pipe D4. The phase deposition equipment with a vacuum pump 11 is a vacuum chemical vapor deposition equipment, while the other phase deposition equipment is a conventional chemical vapor deposition equipment. The quartz tube 13 is located inside the furnace body 12, and the inlet of the quartz tube 13 is connected to the gas path collection device 7. A valve 10 is installed at the inlet of the quartz tube 13. Vacuum pump 11 is connected to vacuum pipeline A1 and the phase deposition equipment, respectively, with valves 9 and 8 installed on the pipelines. This utility model device effectively solves the problems of cleanliness and vacuum environment acquisition in the growth space of two-dimensional materials, and provides a universal, simple, low-cost high-quality growth environment, which is conducive to the growth of high-quality two-dimensional materials.

[0014] In use: The vacuum pump 11 built into the vacuum chemical vapor deposition device can save costs, and the vacuum pump 11 can draw a vacuum in the vacuum line A1 and the corresponding vapor deposition equipment. The vacuum line A1 provides a vacuum environment for other vapor deposition equipment. By connecting multiple chemical vapor deposition devices in parallel and sharing the vacuum pump 11 and the vacuum line A1, a low-cost and simple vacuum interconnected chemical vapor deposition system is constructed. This can effectively improve the cleanliness of the two-dimensional material growth environment, thereby improving the quality of two-dimensional thin film materials prepared by chemical vapor deposition. Furthermore, by designing a shared vacuum line A, the equipment cost can be greatly reduced, the utilization efficiency of the vacuum pump can be improved, and experimental space can be saved.

[0015] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention.

Claims

1. A vacuum interconnected chemical vapor deposition apparatus, comprising a vacuum line A (1), a conventional line B (2), and a conventional line C (3), characterized in that: The vacuum pipeline A (1), ordinary pipeline B (2), and ordinary pipeline C (3) are arranged in parallel, and each of the vacuum pipeline A (1), ordinary pipeline B (2), and ordinary pipeline C (3) is equipped with a T-joint. Each T-joint on ordinary pipeline B (2) is connected to a gas convergence device (7) through a connecting pipeline E (5). Another inlet of the gas convergence device (7) is connected to ordinary pipeline C (3) through a connecting pipeline F (6). Each gas convergence device (7) is connected to a vapor deposition device through a pipeline. The outlet of the vapor deposition device is connected to the vacuum pipeline A (1) through a connecting pipeline D (4). The three-way connectors are connected. One of the vapor deposition devices is equipped with a vacuum pump (11). The vacuum pump (11) is connected to a vapor deposition device and a vacuum line A (1) through a Y-type pipeline. The vapor deposition device is not connected to the vacuum line A (1). The outlet of the vapor deposition device is connected to a tail gas treatment device (14). The inlet of the tail gas treatment device (14) is equipped with a valve four (15). The connecting pipeline E (5) and the connecting pipeline F (6) are connected in series with a valve five (16), a pressure reducing valve (19) and a gas flow meter (18). The connecting pipeline D (4) is connected in series with a valve six (17).

2. The vacuum interconnected chemical vapor deposition apparatus according to claim 1, characterized in that: The vapor deposition equipment includes a furnace body (12) and a quartz tube (13), the quartz tube (13) being located inside the furnace body (12), and the inlet of the quartz tube (13) being connected to the gas flow collection device (7).

3. The vacuum interconnected chemical vapor deposition apparatus according to claim 2, characterized in that: A valve three (10) is provided at the inlet of the quartz tube (13).

4. The vacuum interconnected chemical vapor deposition apparatus according to claim 1, characterized in that: Valves 2 (9) and 1 (8) are respectively installed on the pipelines connecting the vacuum pump (11) to the vacuum pipeline A (1) and the vapor deposition equipment.

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