Rotary device for epitaxial reaction and epitaxial reaction furnace

Abstract

The utility model discloses a rotary device and epitaxial reaction furnace for epitaxial reaction, the rotary device includes the rotary base for supporting wafer tray, rotating mechanism and drive mechanism, rotating mechanism is connected with rotary base through a transmission mechanism and drives rotary base rotation, and drive mechanism is used for driving rotating mechanism rotation. Based on the rotary device, can avoid the graphite particle adhesion monocrystal substrate in epitaxial reaction process, reduces the defect quantity of monocrystal substrate, improves epitaxial layer growth quality.

Description

Technical Field

[0001] This utility model relates to the field of epitaxial reaction apparatus technology, and in particular to a rotating device and an epitaxial reaction furnace for epitaxial reactions. Background Technology

[0002] Epitaxial growth is a process for growing epitaxial layers on the surface of crystalline materials, commonly used in semiconductor device manufacturing. Its principle involves using methods such as chemical vapor deposition (CVD) on a single-crystal substrate to induce a chemical reaction between a gaseous precursor and the substrate surface, generating an epitaxial layer with the same crystal structure as the substrate.

[0003] In the chemical vapor deposition process, a gas suspension + rotation method is often used to optimize the flow of reactive gases and the temperature / concentration distribution on the substrate surface to improve the uniformity of the epitaxial layer. In existing epitaxial reaction devices, the gas suspension outlet of the graphite part and the single crystal substrate are in the same uninterrupted space. Graphite particles blown out from the gas suspension outlet often adhere to the single crystal substrate, which can easily lead to defects in the single crystal.

[0004] Existing solutions typically involve blowing air into and cleaning the air-suspension channels. While this method can effectively suppress graphite particle deposition in the short term, as the epitaxial reactor operates for an extended period, graphite particles and other byproducts accumulate again within the air-suspension channels, leading to re-contamination of the single-crystal substrate with graphite particles. This method cannot fundamentally eliminate the particle regeneration problem and requires periodic cleaning to maintain stable performance, making it rather cumbersome. Utility Model Content

[0005] The purpose of this invention is to provide a rotating device and epitaxial reactor for epitaxial reactions that can reduce the risk of graphite particles adhering to single-crystal substrates and avoid frequent cleaning operations.

[0006] To achieve the above objectives, this utility model discloses a rotating device for epitaxial reactions, comprising: A rotating base for receiving wafer trays; A rotating mechanism, wherein the rotating mechanism is connected to the rotating base via a transmission mechanism and drives the rotating base to rotate; A drive mechanism is used to drive the rotating mechanism to rotate.

[0007] Optionally, the rotating device further includes a base support mechanism, wherein the rotating base is disposed on top of the base support mechanism; The base support mechanism has a receiving cavity, and the rotating mechanism and the transmission mechanism are disposed in the receiving cavity. The top of the base support mechanism has a through hole communicating with the receiving cavity. One end of the transmission mechanism is connected to the rotating base through the through hole to drive the rotating base to rotate.

[0008] Optionally, the rotating base is cylindrical.

[0009] Furthermore, the rotating base is coaxially cylindrical, and the diameter of the upper bottom circle of the rotating base is smaller than the diameter of the lower bottom circle of the rotating base.

[0010] Optionally, the bottom of the receiving cavity protrudes upward to form a snap-fit ​​portion, and the bottom of the rotating mechanism is recessed towards the top to form an embedding portion, with the snap-fit ​​portion and the embedding portion corresponding to each other.

[0011] Optionally, the bottom surface of the rotating mechanism is provided with a suspension groove, and the driving mechanism delivers a gaseous medium to the suspension groove through several air suspension channels so that the rotating mechanism can be suspended and rotated.

[0012] Furthermore, the bottom surface of the rotating mechanism is also provided with several flow guide grooves for maintaining the suspension stability and rotational stability of the rotating mechanism.

[0013] Optionally, the transmission mechanism is a transmission rod, one end of which is connected to the rotating mechanism, and the other end of which is connected to the rotating base.

[0014] The present invention also discloses an epitaxial reactor, which includes a furnace body and a rotating device for epitaxial reaction as described above.

[0015] Compared with the prior art, the rotating device for epitaxial reaction proposed in this utility model fundamentally blocks the migration path of graphite particles to the single crystal substrate through physical isolation. Its advantages are: the adoption of a separation scheme to replace the traditional cleaning and maintenance mode, which strictly limits by-products such as graphite particles to the vicinity of the rotating mechanism, eliminates the risk of wafer surface contamination, improves the stability of the epitaxial process and product yield, and realizes the efficient and continuous operation of the epitaxial reaction process. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the structure of the rotating device for epitaxial reaction according to an embodiment of the present invention.

[0017] Figure 2 This is a bottom view of the bottom surface of the rotating mechanism according to an embodiment of the present invention. Detailed Implementation

[0018] To explain in detail the technical content, structural features, objectives and effects of this utility model, the following description is provided in conjunction with the embodiments and accompanying drawings.

[0019] This embodiment discloses a rotating device for epitaxial reactions to control graphite particle contamination of single-crystal substrates at the source and reduce the frequency of cleaning operations. See also... Figure 1 As shown, the rotating device for epitaxial reaction includes: Rotating base 1 for receiving wafer trays.

[0020] Rotating mechanism 2 is connected to rotating base 1 through a transmission mechanism 3 and drives rotating base 1 to rotate.

[0021] A drive mechanism is used to drive the rotating mechanism 2 to rotate. In this embodiment, taking air suspension as an example, the drive mechanism is a gaseous medium source, which supplies gaseous medium to the rotating mechanism 2 so that the rotating mechanism 2 rotates.

[0022] Compared with existing technologies, the rotating device for epitaxial reactions proposed in this invention adopts a physical isolation design concept. By setting an isolation structure of transmission mechanism 3 between the rotating mechanism 2 and the rotating base 1, the migration path of graphite particles to the single-crystal substrate is fundamentally blocked. Traditional epitaxial reaction devices often rely on regular cleaning and maintenance to reduce contamination when dealing with byproducts such as graphite particles. However, this method not only increases the complexity of the production process but also makes it difficult to completely eliminate the risk of contamination. Especially in continuous production, the accumulation of byproducts may still lead to contamination on the surface of the single-crystal substrate, thereby affecting the quality of the epitaxial layer.

[0023] This invention's rotating device employs a separation scheme to replace the traditional cleaning and maintenance method. During operation, byproducts such as graphite particles are strictly confined to the vicinity of the selected rotating mechanism 2, preventing them from diffusing to the single-crystal substrate surface, thus effectively eliminating the risk of wafer surface contamination. This design not only improves the stability of the epitaxial process and reduces process fluctuations caused by contamination, but also significantly improves product yield and reduces production costs. Simultaneously, by reducing the frequency and intensity of cleaning and maintenance, the device can achieve efficient and continuous operation of the epitaxial reaction process, improving production efficiency.

[0024] In summary, the rotating device of this invention effectively solves the problem of graphite particle contamination through a physical isolation scheme, thereby improving the stability of the epitaxial process, product yield, and production efficiency.

[0025] See Figure 1As shown, optionally, the rotating device further includes a base support mechanism 4, with the rotating base 1 disposed on top of the base support mechanism 4. The base support mechanism 4 has a receiving cavity 41, within which the rotating mechanism 2 and the transmission mechanism 3 are disposed. A through hole 42 communicating with the receiving cavity 41 is opened at the top of the base support mechanism 4. One end of the transmission mechanism 3 is connected to the rotating base 1 through the through hole 42 to drive the rotating base 1 to rotate. In this embodiment, the base support mechanism 4 further isolates the contact between the rotating mechanism 2 and the rotating base 1, further avoiding the risk of graphite particles drifting towards the rotating base 1 and contaminating the single-crystal substrate on the rotating base 1.

[0026] See Figure 1 and Figure 2 As shown, optionally, the rotating base 1 is cylindrical; more specifically, the rotating base 1 can also be coaxial cylindrical, with the diameter of the upper bottom circle of the rotating base 1 being smaller than the diameter of the lower bottom circle. In this embodiment, the cylindrical rotating base 1 is adapted to the growth of the epitaxial layer of the wafer. The lower part of the rotating base 1 is connected to the transmission mechanism 3. The structure in which the diameter of the upper bottom circle of the rotating base 1 is smaller than the diameter of the lower bottom circle enhances the stability of rotation and ensures uniform growth of the epitaxial layer.

[0027] Optionally, the bottom of the receiving cavity 41 protrudes upward to form a locking portion 43, and the bottom of the rotating mechanism 2 is recessed towards the top to form an embedding portion 21. The locking portion 43 and the embedding portion 21 are positioned correspondingly. In this embodiment, the cooperation between the locking portion 43 and the embedding portion 21 ensures the stability of the rotation of the rotating mechanism 2, thereby stabilizing the uniform growth of the epitaxial layer.

[0028] See Figure 2 As shown, optionally, the bottom surface of the rotating mechanism 2 is provided with a suspension groove 22. The driving mechanism supplies a gaseous medium to the suspension groove 22 through several air suspension channels 5 to suspend and rotate the rotating mechanism 2. In this embodiment, the gaseous medium is an inert gas, preferably helium, and the suspension groove 22 is preferably annular. In this embodiment, the inert gas is supplied to the suspension groove 22 at the bottom of the rotating mechanism 2 through the air suspension channels 5. By controlling the flow rate and velocity of the inert gas, the rotating mechanism 2 can achieve suspension and rotation.

[0029] Furthermore, the bottom surface of the rotating mechanism 2 is also provided with several flow-guiding grooves 23 for maintaining the suspension stability and rotational stability of the rotating mechanism 2. In this embodiment, the flow-guiding grooves 23 are arranged in a spiral symmetrical manner. The flow-guiding grooves 23 are used to guide the flow direction of the gaseous medium, so that the rotating mechanism 2 can rotate stably and avoid tipping over.

[0030] Optionally, the transmission mechanism 3 is a transmission rod, with one end connected to the rotating mechanism 2 and the other end connected to the rotating base 1. Furthermore, the transmission rod can be integrally formed with the rotating mechanism 2 to enhance the transmission effect and avoid misalignment caused by poor connection between the transmission rod and the rotating mechanism 2. This embodiment also discloses an epitaxial reactor, characterized in that it includes a furnace body and a rotating device for epitaxial reaction as described above.

[0031] It will be apparent to those skilled in the art that this invention is not limited to the details of the exemplary embodiments described above, and that it can be implemented in other specific forms without departing from the spirit or essential characteristics of this invention. Therefore, the embodiments should be considered illustrative and non-limiting in all respects, and the scope of this invention is defined by the appended claims rather than the foregoing description. Thus, it is intended that all variations falling within the meaning and scope of equivalents of the claims be included within this invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

[0032] Meanwhile, the above-disclosed embodiments are merely preferred embodiments of the present utility model and should not be construed as limiting the scope of the present utility model. Therefore, any equivalent changes made in accordance with the scope of the present utility model patent application shall still fall within the scope of the present utility model.

Claims

1. A rotating apparatus for epitaxial reactions, characterized in that, include: A rotating base for receiving wafer trays; A rotating mechanism, wherein the rotating mechanism is connected to the rotating base via a transmission mechanism and drives the rotating base to rotate; A drive mechanism is used to drive the rotating mechanism to rotate.

2. The rotating device for epitaxial reaction according to claim 1, characterized in that, The rotating device further includes a base support mechanism, wherein the rotating base is disposed on the top of the base support mechanism; The base support mechanism has a receiving cavity, and the rotating mechanism and the transmission mechanism are disposed in the receiving cavity. The top of the base support mechanism has a through hole communicating with the receiving cavity. One end of the transmission mechanism is connected to the rotating base through the through hole to drive the rotating base to rotate.

3. The rotating device for epitaxial reaction according to claim 1, characterized in that, The rotating base is cylindrical.

4. The rotating device for epitaxial reaction according to claim 3, characterized in that, The rotating base is coaxial cylindrical, and the diameter of the upper bottom circle of the rotating base is smaller than the diameter of the lower bottom circle of the rotating base.

5. The rotating device for epitaxial reaction according to claim 1, characterized in that, The bottom of the accommodating cavity protrudes upward to form a snap-fit ​​portion, and the bottom of the rotating mechanism is recessed towards the top to form an embedding portion. The snap-fit ​​portion and the embedding portion are positioned correspondingly.

6. The rotating apparatus for epitaxial reaction according to claim 1, characterized in that, The bottom surface of the rotating mechanism is provided with a suspension groove, and the driving mechanism delivers a gaseous medium to the suspension groove through several air suspension channels so that the rotating mechanism can be suspended and rotated.

7. The rotating apparatus for epitaxial reaction according to claim 6, characterized in that, The bottom surface of the rotating mechanism is also provided with several flow guide grooves for maintaining the suspension stability and rotational stability of the rotating mechanism.

8. The rotating apparatus for epitaxial reaction according to claim 1, characterized in that, The transmission mechanism is a transmission rod, one end of which is connected to the rotating mechanism, and the other end of which is connected to the rotating base.

9. An epitaxial reactor, characterized in that, It includes a furnace body and a rotating device for epitaxial reaction as described in any one of claims 1 to 8.

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