Coating apparatus

Abstract

The utility model discloses a kind of coating equipment, the coating equipment is used to form buffer layer on the electron transport layer of perovskite solar cell, the coating equipment includes: ALD device, with ALD reaction cavity, when the perovskite solar cell passes through the ALD reaction cavity along X axis direction, the ALD device forms first buffer layer on the electron transport layer along Y axis positive direction;RPD device, with RPD reaction cavity, when the perovskite solar cell passes through the RPD reaction cavity along X axis direction, the RPD device forms second buffer layer on the electron transport layer along Y axis reverse direction;Turnover device, between the ALD device and the RPD device, when the perovskite solar cell passes through the turnover device, the turnover device overturns 180 degrees the perovskite solar cell.The coating equipment of the utility model can realize the preparation of buffer layer of low damage, high transmittance, low square resistance and high carrier mobility.

Description

Technical Field

[0001] This utility model relates to the technical field of perovskite solar cell fabrication equipment, and in particular to a coating equipment. Background Technology

[0002] In the fabrication of tandem perovskite solar cell devices, a hole transport layer, a perovskite layer, an electron transport layer, a buffer layer, and a silver electrode layer need to be sequentially fabricated on a silicon solar cell substrate. After the electron transport layer is deposited, a buffer layer needs to be formed on its surface to prevent the silver paste from penetrating during the subsequent formation of the silver electrode layer using the screen printing equipment.

[0003] In existing technologies, buffer layers are mostly prepared using Reactive Plasma Deposition (RPD) equipment. The principle involves using magnetron sputtering to focus a plasma beam onto the surface of a solid target ingot in the center of the furnace. The sublimated target particles are highly dissociated in the plasma region, and thus, in the form of mostly plasma particles, they are deposited on the electron transport layer surface to form a thin film. Currently, the deposited thin films are mostly transparent conductive materials (TCO), and the requirements for the deposited films are low damage, high transmittance, low sheet resistance, and high carrier mobility. Existing technologies mainly control these requirements by optimizing the operating parameters of the RPD equipment (such as plasma energy, oxygen partial pressure, and deposition rate). However, with the development of device quality, relying solely on parameter optimization is no longer sufficient to overcome performance bottlenecks. The prepared thin films are gradually failing to meet the demands of technological upgrades in terms of damage control and synergistic improvement of optoelectronic performance, becoming a key obstacle restricting further improvements in product performance. Utility Model Content

[0004] This invention aims to solve at least one of the technical problems existing in the prior art. To this end, this invention proposes a coating equipment capable of preparing a buffer layer with low damage, high transmittance, low sheet resistance, and high carrier mobility.

[0005] According to a first aspect of the present invention, a coating apparatus is used to form a buffer layer on the electron transport layer of a perovskite solar cell, the coating apparatus comprising:

[0006] The ALD device is provided with an ALD reaction chamber. When the perovskite solar cell passes through the ALD reaction chamber along the X-axis, the ALD device forms a first buffer layer on the electron transport layer along the positive Y-axis.

[0007] The RPD device is provided with an RPD reaction chamber. When the perovskite solar cell passes through the RPD reaction chamber along the X-axis, the RPD device forms a second buffer layer on the electron transport layer in the opposite direction along the Y-axis.

[0008] A flipping device is disposed between the ALD device and the RPD device. When the perovskite solar cell passes through the flipping device, the flipping device flips the perovskite solar cell by 180 degrees. The first buffer layer and the second buffer layer are stacked and together constitute the buffer layer.

[0009] According to embodiment A of this utility model, at least the following beneficial effects are achieved: By integrating the ALD device and the RPD device in a coating device, when the perovskite solar cell passes through the ALD reaction chamber along the X-axis, the ALD device forms a first buffer layer on the electron transport layer along the positive Y-axis. When passing through the RPD reaction chamber along the X-axis, the RPD device forms a second buffer layer on the electron transport layer along the negative Y-axis. By flipping the device by 180 degrees to adapt to the layout of the ALD device and the RPD device, a first buffer layer and a second buffer layer are formed in a stacked arrangement. Since the buffer layer includes a stacked first buffer layer and a second buffer layer, the process of the ALD device forming the first buffer layer is a layer-by-layer growth, which is uniform and causes little disturbance to the surrounding layers, thus exhibiting good characteristics of low damage and high transmittance. The process of the RPD device forming the second buffer layer is relatively efficient and can meet the requirements of high mobility and low sheet resistance. The combination of the two achieves the preparation of a buffer layer with low damage, high transmittance, low sheet resistance, and high carrier mobility, and can also reduce the indium content and reduce costs.

[0010] According to some embodiments of the present invention, the flipping device includes:

[0011] Tilting power component;

[0012] A tilting frame is installed at the output end of the tilting power component;

[0013] A first conveying component and a second conveying component are both mounted on the flipping frame. The first conveying component and the second conveying component form a conveying channel at intervals. The flipping power component drives the flipping frame to flip so that the conveying channel aligns with the ALD reaction chamber and the RPD reaction chamber. The carrier plate carrying the perovskite solar cell enters the conveying channel. The first conveying component and the second conveying component respectively abut against and convey the carrier plate from both sides.

[0014] According to some embodiments of the present invention, the flipping device further includes a blocking component, which is installed on the flipping frame and is used to selectively block the port of the conveying channel so that the carrier plate can enter the conveying channel or prevent the carrier plate from moving out of the conveying channel.

[0015] According to some embodiments of this utility model, the blocking components are configured in two groups, and the two groups of blocking components are configured one-to-one with the two ports of the transmission channel.

[0016] According to some embodiments of the present invention, the first conveying component includes a first conveying motor and a first conveying wheel assembly. The first conveying motor is fixedly mounted on the tilting frame, and the first conveying wheel assembly is rotatably mounted on the tilting frame and drivenly connected to the output end of the first conveying motor. The second conveying component includes a second conveying motor and a second conveying wheel assembly. The second conveying motor is fixedly mounted on the tilting frame, and the second conveying wheel assembly is rotatably mounted on the tilting frame and drivenly connected to the output end of the second conveying motor. The first conveying wheel assembly and the second conveying wheel assembly are spaced apart to form the conveying channel.

[0017] According to some embodiments of the present invention, the ALD device is a horizontal ALD device, the RPD device is a horizontal RPD device, the X-axis direction is horizontal, and the Y-axis direction is vertical.

[0018] Alternatively, the ALD device is a vertical ALD device, and the RPD device is a vertical RPD device, with the X-axis and Y-axis directions being two perpendicular horizontal directions.

[0019] According to some embodiments of the present invention, the flipping device is provided with a flipping cavity, one side of the flipping cavity is connected to the ALD reaction cavity, and the other side of the flipping cavity is connected to the RPD reaction cavity.

[0020] According to some embodiments of the present invention, the flipping device is provided with a flipping cavity;

[0021] A first gate valve is provided between the flipping chamber and the ALD reaction chamber. Activating the first gate valve allows the flipping chamber to connect with or close the ALD reaction chamber.

[0022] A second gate valve is provided between the flipping chamber and the RPD reaction chamber. Activating the second gate valve allows the flipping chamber to connect with or close the RPD reaction chamber.

[0023] According to some embodiments of the present invention, the coating equipment further includes a feeding device and a discharging device, wherein the feeding device, the ALD device, the flipping device, the RPD device, and the discharging device are arranged sequentially.

[0024] According to some embodiments of the present invention, the coating equipment further includes a feeding device and a discharging device, wherein the feeding device, the RPD device, the flipping device, the ALD device, and the discharging device are arranged sequentially.

[0025] Additional aspects and advantages of this invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0026] The present invention will be further described below with reference to the accompanying drawings and embodiments, wherein:

[0027] Figure 1 This is a schematic diagram of the coating equipment according to an embodiment of the present invention;

[0028] Figure 2 This is a schematic diagram of the ALD device in the coating equipment of this utility model embodiment;

[0029] Figure 3 This is a schematic diagram of the structure of the RPD device in the coating equipment according to an embodiment of the present invention;

[0030] Figure 4 This is a schematic diagram of the structure of the flipping device of the coating equipment according to an embodiment of the present utility model;

[0031] Figure 5 This is a partial structural schematic diagram of a perovskite solar cell according to an embodiment of the present invention.

[0032] Figure label:

[0033] 100. ALD device; 110. ALD air inlet plate; 120. ALD air distribution plate; 130. Heating plate; 140. ALD transfer module; 150. ALD reaction chamber;

[0034] 200, RPD device; 200a, RPD reaction chamber; 210, plasma generator; 220, target material position;

[0035] 300, Tilting device; 310, Tilting power component; 320, Tilting frame; 330, First conveying assembly; 340, Second conveying assembly; 300a, Conveying channel; 350, Blocking assembly; 351, Blocking power component; 352, Blocking component;

[0036] 400. Feeding device;

[0037] 500. Feeding device;

[0038] 10. Perovskite layer; 20. Electron transport layer; 30. Buffer layer; 31. First buffer layer; 32. Second buffer layer; 40. Electrode layer. Detailed Implementation

[0039] The embodiments of the technical solution of this application will now be described in detail with reference to the accompanying drawings. These embodiments are only used to more clearly illustrate the technical solution of this application and are therefore merely examples, and should not be used to limit the scope of protection of this application.

[0040] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the application; the terms “comprising” and “having”, and any variations thereof, in the specification, claims, and foregoing description of the drawings are intended to cover non-exclusive inclusion.

[0041] In the description of the embodiments of this application, the technical terms "first," "second," "third," etc., are used only to distinguish different objects and should not be construed as indicating or implying relative importance or implicitly specifying the number, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, "multiple" means two or more, unless otherwise explicitly defined.

[0042] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0043] In the description of the embodiments in this application, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this document generally indicates that the preceding and following related objects are in an "or" relationship.

[0044] In the description of the embodiments of this application, the technical terms "top", "bottom", "upper", "lower", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed, operated or used in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this application.

[0045] In the description of the embodiments of this application, unless otherwise expressly specified and limited, the technical terms such as "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. For those skilled in the art, the specific meaning of the above terms in the embodiments of this application can be understood according to the specific circumstances.

[0046] In the description of the embodiments of this application, unless otherwise expressly specified and limited, the technical term "contact" should be interpreted broadly, and can be direct contact, contact through an intermediate medium layer, contact between two contacting parties with substantially no interaction force, or contact between two contacting parties with interaction force.

[0047] Please refer to Figures 1-5 This application provides a coating apparatus for forming a buffer layer 30 on the electron transport layer 20 of a perovskite solar cell. The buffer layer 30 is a dense, uniform thin film used to physically isolate the silver paste and block its penetration path.

[0048] The coating equipment includes an ALD (Atomic Layer Deposition) device and an RPD (Reactive Plasma Deposition) device. The ALD device 100 is used to form a first buffer layer 31, wherein the first buffer layer 31 may be made of SnOx material. The RPD device 200 is used to form a second buffer layer 32, wherein the second buffer layer 32 may be made of IWO material. The first buffer layer 31 and the second buffer layer 32 are stacked, and together they constitute a buffer layer 30.

[0049] The ALD device 100 includes an ALD reaction chamber 150, within which a first buffer layer 31 of the perovskite solar cell is formed. When the perovskite solar cell passes through the ALD reaction chamber 150 along the X-axis, the ALD device 100 forms the first buffer layer 31 on the electron transport layer 20 along the positive Y-axis. It can be understood that when the ALD device 100 forms the first buffer layer 31 on the electron transport layer 20, it is in a direction perpendicular to the direction of movement of the perovskite solar cell.

[0050] The RPD device 200 includes an RPD reaction chamber 200a, within which a second buffer layer 32 of the perovskite solar cell is formed. When the perovskite solar cell passes through the RPD reaction chamber 200a along the X-axis, the RPD device 200 forms the second buffer layer 32 on the electron transport layer 20 in the opposite direction along the Y-axis. It can be understood that the RPD device 200 forms the second buffer layer 32 on the electron transport layer 20 in a direction perpendicular to the direction of movement of the perovskite solar cell. Specifically, the direction in which the RPD device 200 forms the second buffer layer 32 on the electron transport layer 20 is opposite to the direction in which the ALD device 100 forms the first buffer layer 31 on the electron transport layer 20.

[0051] Furthermore, the coating equipment also includes a flipping device 300, which is disposed between the ALD device 100 and the RPD device 200. When the perovskite solar cell passes through the flipping device 300, the flipping device 300 flips the perovskite solar cell by 180 degrees to adapt to the layout structure of the RPD device 200 and the ALD device 100.

[0052] The RPD device 200 operates by providing a high-density plasma source in a high-vacuum RPD reaction chamber 200a using a plasma generator. The plasma source heats the target material, causing it to sublimate and activate into a gaseous state, which is then ionized. The ionized TCO material is deposited onto the substrate surface, forming a transparent conductive film (TCO). The buffer layer 30 prepared by the RPD device 200 achieves high mobility and low sheet resistance, but its transmittance is relatively low. The ALD device 100 operates by sequentially purging an ALD source, nitrogen, oxygen source, and nitrogen again in a low-vacuum ALD reaction chamber 150, continuously cycling through each cycle to grow a 0.1 nm film. The buffer layer 30 prepared by the ALD device 100 is made of SnOx material, achieving low damage and high transmittance; however, the production cycle is too long.

[0053] In the above embodiments, by integrating the ALD device 100 and the RPD device 200 into the coating equipment, when the perovskite solar cell passes through the ALD reaction chamber 150 along the X-axis, the ALD device 100 forms a first buffer layer 31 on the electron transport layer 20 along the positive Y-axis. When passing through the RPD reaction chamber 200a along the X-axis, the RPD device 200 forms a second buffer layer 32 on the electron transport layer 20 along the negative Y-axis. By flipping the device 300 by 180 degrees to adapt to the layout of the ALD device 100 and the RPD device 200, the first buffer layer 31 and the second buffer layer 32 are formed in a stacked arrangement.

[0054] Since the buffer layer 30 includes a first buffer layer 31 and a second buffer layer 32 stacked together, the process of the ALD device 100 forming the first buffer layer 31 is a layer-by-layer growth, which is uniform and causes little disturbance to the surrounding layers. Therefore, it has good characteristics of low damage and high transmittance. The process of the RPD device 200 forming the second buffer layer 32 is relatively efficient. It can meet the requirements of high mobility and low sheet resistance, thereby realizing the preparation of a buffer layer 30 with low damage, high transmittance, low sheet resistance and high carrier mobility. It can also reduce the indium content and reduce the cost.

[0055] In some specific embodiments, the X-axis direction is horizontal and the Y-axis direction is vertical. For example, the ALD device 100 forms a first buffer layer 31 on the electron transport layer 20 with the direction vertically downward, at which point the electron transport layer 20 of the perovskite solar cell faces upward. The RPD device 200 forms a second buffer layer 32 on the electron transport layer 20 with the direction vertically upward, at which point the electron transport layer 20 of the perovskite solar cell faces downward. In this embodiment, the perovskite solar cell is disposed on a carrier plate and enters the coating equipment in a horizontal orientation. The ALD device 100 is a horizontal ALD device, and the RPD device 200 is a horizontal RPD device.

[0056] In some other embodiments, the X-axis and Y-axis are two perpendicular horizontal directions. The perovskite solar cell is mounted on a carrier plate and enters the coating equipment in a vertical orientation, wherein the ALD device 100 is a vertical ALD device and the RPD device 200 is a vertical RPD device.

[0057] Please refer to Figure 4 In some embodiments, the flipping device 300 includes a flipping power component 310, a flipping frame 320, a first conveying component 330, and a second conveying component 340.

[0058] The flipping power unit 310 provides the power for the flipping action. The flipping frame 320 is mounted on the output end of the flipping power unit 310 and can flip under the drive of the flipping power unit 310.

[0059] Both the first conveying component 330 and the second conveying component 340 are mounted on the tilting frame 320. The tilting frame 320 tilts, causing the first conveying component 330 and the second conveying component 340 to tilt together.

[0060] The first conveying component 330 and the second conveying component 340 are spaced apart to form a conveying channel 300a. The flipping power component 310 can drive the flipping frame 320 to flip so that the conveying channel 300a is aligned with the ALD reaction chamber 150 and the RPD reaction chamber 200a. This facilitates the movement of the carrier plate carrying the perovskite solar cell from the flipping device 300 to the ALD reaction chamber 150 or the RPD reaction chamber 200a, or facilitates the movement of the carrier plate from the ALD reaction chamber 150 or the RPD reaction chamber 200a to the flipping device 300.

[0061] In this process, a carrier plate containing perovskite solar cells enters a conveying channel 300a, where a first conveying component 330 and a second conveying component 340 abut against and convey the carrier plate from both sides. This enables carrier plate movement and also restricts the carrier plate during the flipping process.

[0062] Furthermore, to prevent the carrier plate from moving out of the conveyor channel 300a during the flipping process, in some embodiments, the flipping device 300 further includes a blocking component 350, which is mounted on the flipping frame 320. The blocking component 350 is used to selectively block the ports of the conveyor channel 300a, so that the carrier plate can enter the conveyor channel 300a or prevent the carrier plate from moving out of the conveyor channel 300a. The conveyor channel 300a has ports at both ends in the conveying direction.

[0063] When the carrier plate enters or exits the conveyor channel 300a, the blocking component 350 chooses not to block the port of the conveyor channel 300a; when the carrier plate is inside the conveyor channel 300a, the blocking component 350 blocks the port of the conveyor channel 300a, thereby preventing the carrier plate from moving out of the conveyor channel 300a during the flipping process.

[0064] In some embodiments, the blocking assembly 350 is configured as a group, comprising a blocking power component 351 and two blocking components 352. The two blocking components 352 are disposed at the output end of the blocking power component 351. Driven by the blocking power component 351, the two blocking components 352 synchronously open or block the ports at both ends of the conveying channel 300a. The blocking power component 351 is a motor or a cylinder.

[0065] In other embodiments, the blocking components 350 are configured in two sets, with each set corresponding to one of the two ports of the conveying channel 300a. Each set of blocking components 350 includes a blocking power component 351 and a blocking component 352. The blocking power component 351 drives the blocking component 352 to independently block the corresponding port, ensuring the stability of the carrier plate during the flipping process.

[0066] Regarding the specific structures of the first conveying assembly 330 and the second conveying assembly 340: In some embodiments, the first conveying assembly 330 includes a first conveying motor and a first conveying wheel assembly. The first conveying motor is fixedly mounted on the tilting frame 320, and the first conveying wheel assembly is rotatably mounted on the tilting frame 320 and drivenly connected to the output end of the first conveying motor. The second conveying assembly 340 includes a second conveying motor and a second conveying wheel assembly. The second conveying motor is fixedly mounted on the tilting frame 320, and the second conveying wheel assembly is rotatably mounted on the tilting frame 320 and drivenly connected to the output end of the second conveying motor. The first conveying wheel assembly and the second conveying wheel assembly are spaced apart to form a conveying channel 300a.

[0067] In some embodiments, the flipping device 300 is provided with a flipping chamber, one side of which is connected to the ALD reaction chamber 150, and the other side of which is connected to the RPD reaction chamber 200a. That is, the ALD reaction chamber 150, the flipping chamber, and the RPD reaction chamber 200a constitute a closed chamber. The carrier plate does not need to be broken when moving from the ALD reaction chamber 150 to the flipping chamber, or from the flipping chamber to the RPD reaction chamber 200a, thereby ensuring a stable vacuum environment throughout the process, avoiding external contamination, and improving the fabrication quality and efficiency of perovskite solar cells.

[0068] It is understood that at least a portion of the flipping device 300 is located within the flipping cavity, such as the first conveying component 330 and the second conveying component 340 forming the conveying channel 300a being located within the flipping cavity.

[0069] In other embodiments, the flipping device 300 is provided with a flipping chamber, and a first gate valve is provided between the flipping chamber and the ALD reaction chamber 150. Activating the first gate valve allows the flipping chamber to connect with or close the ALD reaction chamber 150. A second gate valve is provided between the flipping chamber and the RPD reaction chamber 200a. Activating the second gate valve allows the flipping chamber to connect with or close the RPD reaction chamber 200a.

[0070] Thus, by closing the first valve, the ALD reaction chamber 150 can be isolated from the flipping chamber. Similarly, by closing the second valve, the flipping chamber can be isolated from the RPD reaction chamber 200a. Therefore, when the carrier plate carrying the perovskite solar cell forms the first buffer layer 31 in the ALD reaction chamber 150, the other carrier plate carrying the perovskite solar cell forms the second buffer layer 32 in the RPD reaction chamber 200a, thereby improving efficiency. The aforementioned flipping chamber, ALD reaction chamber 150, and RPD reaction chamber 200a can operate independently, and each chamber can be equipped with a carrier plate, resulting in relatively higher efficiency.

[0071] Please refer to Figure 1In some embodiments, the coating equipment further includes a feeding device 400 and a discharging device 500, with the feeding device 400, ALD device 100, flipping device 300, RPD device 200, and discharging device 500 arranged sequentially. The perovskite solar cell enters the coating equipment on the feeding device 400, passes through the ALD device 100, flipping device 300, and RPD device 200 in sequence, and then flows out of the coating equipment through the discharging device 500.

[0072] Understandably, since the perovskite solar cell first passes through the ALD device 100 and then the RPD device 200, the first buffer layer 31 is formed on the electron transport layer 20 first, and then the second buffer layer 32 is formed on the first buffer layer 31. In this way, the first buffer layer 31 can greatly reduce the disturbance to the electron transport layer 20 during the formation of the second buffer layer 32, thereby ensuring the stability and reliability of the overall cell structure.

[0073] In other embodiments, the coating equipment further includes a loading device 400 and a unloading device 500, wherein the loading device 400, RPD device 200, flipping device 300, ALD device 100, and unloading device 500 are arranged sequentially. The perovskite solar cell enters the coating equipment on the loading device 400, passes through the RPD device 200, flipping device 300, and ALD device 100 in sequence, and then flows out of the coating equipment through the unloading device 500.

[0074] Please refer to Figure 2 In some embodiments, the ALD reaction chamber 150 includes a first buffer chamber, an ALD process chamber, and a second buffer chamber. The first buffer chamber, the ALD process chamber, and the second buffer chamber are arranged sequentially along the conveying direction. The ALD device 100 also includes an ALD conveying module 140, which drives the carrier plate to move repeatedly in the first buffer chamber, the ALD process chamber, and the second buffer chamber. Each reciprocating movement forms an ALD film layer until a preset thickness is reached, thus obtaining the first buffer layer 31.

[0075] The ALD device 100 includes an ALD inlet plate 110, an ALD distribution plate 120, and a heating plate 130. The ALD inlet plate 110 is connected to the ALD distribution plate 120, which is located above and parallel to the ALD conveying module 140. The ALD distribution plate 120 has several distribution holes, through which tin source, nitrogen, water source, and nitrogen are sequentially introduced, forming five groups. An extraction hole is provided between adjacent distribution holes to remove excess unreacted gas. The heating plate 130 is located below and parallel to the ALD conveying module 140.

[0076] Please refer to Figure 3 In some embodiments, the RPD reaction chamber 200a includes a third buffer chamber, an RPD process chamber, and a fourth buffer chamber. The third buffer chamber, RPD process chamber, and fourth buffer chamber are arranged sequentially along the conveying direction. The RPD device 200 also includes an RPD conveying module and an oxygen supply module. The RPD conveying module drives the carrier plate sequentially through the third buffer chamber, the RPD process chamber, and the fourth buffer chamber to form a second buffer layer 32. The moving speed of the RPD conveying module is adjustable. The oxygen supply module is configured to adjust the oxygen partial pressure in the RPD process chamber during the formation of the second buffer layer 32.

[0077] For example, when depositing 100nm IWO, the first 10nm can be set to be oxygen-free, 10-30nm to be 2sccm of oxygen, 30-80nm to be 5sccm of oxygen, and 80-100nm to be 20sccm of oxygen, to obtain a second buffer layer 32 with continuous deposition of different oxygen partial pressures.

[0078] The RPD device 200 includes a plasma generator 210 and a target position 220. The target position 220 is used to place the target material, and the plasma generator 210 is used to provide a high-density plasma source. The plasma source acts on the target material, causing the target material to sublimate and activate into a gaseous state and ionize. The ionized TCO material is then deposited on the first buffer layer 31.

[0079] Please refer to Figure 5 This application also provides a perovskite solar cell, which includes a perovskite layer 10, an electron transport layer 20, a buffer layer 30 and an electrode layer 40 stacked sequentially. The buffer layer 30 is prepared using the above-mentioned coating equipment. The buffer layer 30 includes a first buffer layer 31 and a second buffer layer 32 stacked together. The first buffer layer 31 is prepared using an ALD device 100 and the second buffer layer 32 is prepared using an RPD device 200. The electrode layer 40 is generally a silver electrode.

[0080] The first buffer layer 31 is located on the side of the electron transport layer 20 away from the perovskite layer 10, and the second buffer layer 32 is located between the first buffer layer 31 and the electrode layer 40.

[0081] The thickness of the first buffer layer 31 ranges from 0.1 nm to 50 nm. The thickness of the second buffer layer 32 ranges from 0.1 nm to 100 nm.

[0082] The above embodiments are merely illustrative of the technical solutions of this application and are not intended to limit it. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application, and all should be covered within the scope of the specification of this application. In particular, as long as there is no structural conflict, the various technical features mentioned in the embodiments can be combined in any way. This application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of protection.

Claims

1. A coating equipment, characterized in that, The coating equipment is used to form a buffer layer on the electron transport layer of a perovskite solar cell, and the coating equipment includes: The ALD device is provided with an ALD reaction chamber. When the perovskite solar cell passes through the ALD reaction chamber along the X-axis, the ALD device forms a first buffer layer on the electron transport layer along the positive Y-axis. The RPD device is provided with an RPD reaction chamber. When the perovskite solar cell passes through the RPD reaction chamber along the X-axis, the RPD device forms a second buffer layer on the electron transport layer in the opposite direction along the Y-axis. A flipping device is disposed between the ALD device and the RPD device. When the perovskite solar cell passes through the flipping device, the flipping device flips the perovskite solar cell by 180 degrees. The first buffer layer and the second buffer layer are stacked and together constitute the buffer layer.

2. The coating equipment according to claim 1, characterized in that, The flipping device includes: Tilting power component; A tilting frame is installed at the output end of the tilting power component; A first conveying component and a second conveying component are both mounted on the flipping frame. The first conveying component and the second conveying component form a conveying channel at intervals. The flipping power component drives the flipping frame to flip so that the conveying channel aligns with the ALD reaction chamber and the RPD reaction chamber. The carrier plate carrying the perovskite solar cell enters the conveying channel. The first conveying component and the second conveying component respectively abut against and convey the carrier plate from both sides.

3. The coating equipment according to claim 2, characterized in that, The flipping device further includes a blocking component installed on the flipping frame. The blocking component is used to selectively block the port of the conveying channel so that the carrier plate can enter the conveying channel or prevent the carrier plate from moving out of the conveying channel.

4. The coating equipment according to claim 3, characterized in that, The blocking components are configured in two groups, and the two groups of blocking components are configured one-to-one with the two ports of the transmission channel.

5. The coating equipment according to claim 2, characterized in that, The first conveying component includes a first conveying motor and a first conveying wheel assembly. The first conveying motor is fixedly mounted on the tilting frame, and the first conveying wheel assembly is rotatably mounted on the tilting frame and drivenly connected to the output end of the first conveying motor. The second conveying component includes a second conveying motor and a second conveying wheel assembly. The second conveying motor is fixedly mounted on the tilting frame, and the second conveying wheel assembly is rotatably mounted on the tilting frame and drivenly connected to the output end of the second conveying motor. The first conveying wheel assembly and the second conveying wheel assembly are spaced apart to form the conveying channel.

6. The coating equipment according to any one of claims 1-5, characterized in that, The ALD device is a horizontal ALD device, and the RPD device is a horizontal RPD device. The X-axis direction is horizontal and the Y-axis direction is vertical. Alternatively, the ALD device is a vertical ALD device, and the RPD device is a vertical RPD device, with the X-axis and Y-axis directions being two perpendicular horizontal directions.

7. The coating equipment according to any one of claims 1-5, characterized in that, The flipping device is provided with a flipping chamber, one side of which is connected to the ALD reaction chamber and the other side of which is connected to the RPD reaction chamber.

8. The coating equipment according to any one of claims 1-5, characterized in that, The flipping device is provided with a flipping cavity; A first gate valve is provided between the flipping chamber and the ALD reaction chamber. Activating the first gate valve allows the flipping chamber to connect with or close the ALD reaction chamber. A second gate valve is provided between the flipping chamber and the RPD reaction chamber. Activating the second gate valve allows the flipping chamber to connect with or close the RPD reaction chamber.

9. The coating equipment according to any one of claims 1-5, characterized in that, The coating equipment further includes a feeding device and a discharging device, wherein the feeding device, the ALD device, the flipping device, the RPD device, and the discharging device are arranged in sequence.

10. The coating apparatus according to any one of claims 1-5, characterized in that, The coating equipment further includes a feeding device and a discharging device, wherein the feeding device, the RPD device, the flipping device, the ALD device, and the discharging device are arranged in sequence.

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