Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component

Abstract

Method for producing an optoelectronic semiconductor component (100) comprising the steps: A) Providing a semiconductor chip (1) produced by singulating a wafer, wherein - the semiconductor chip (1) comprises a substrate (10) and a semiconductor layer sequence (11) with an active layer (12) applied to a main side (110) of the substrate (10), - the semiconductor layer sequence (11) has exactly one active region (13) for the emission or absorption of radiation and a sacrificial region (14) arranged next to it in the direction parallel to the main side (110), - the sacrificial region (14) on the finished semiconductor component (100) is not intended for the emission or absorption of radiation, - a trench (15) introduced into the semiconductor layer sequence (11) penetrates the active layer (12) and separates the active region (13) from the sacrificial region (14), - the active layer (12) is formed continuously within the active region (13); B) applying the semiconductor chip (1) with the semiconductor layer sequence (11) first onto a carrier (2); C) detaching the substrate (10) from the active region (13) of the semiconductor layer sequence (11), wherein in the sacrificial region (14) the semiconductor layer sequence (11) remains mechanically connected to the substrate (10); D) subsequently finally separating the substrate (10) from the semiconductor layer sequence (11) by detaching the substrate in the sacrificial region (14).

Description

[0001] A method for producing an optoelectronic semiconductor component is specified. Furthermore, an optoelectronic semiconductor component is specified.

[0002] The document US 2010 / 0 248 404 A1 relates to a method for producing a compound semiconductor component based on group III nitrides. The document CN 103 824 905 A relates to a laser lift-off process for sapphire substrates in gallium nitride LEDs. The document US 2011 / 0 215 350 A1 relates to a light-emitting device.

[0003] One problem to be solved is to provide a method for producing an optoelectronic semiconductor component with a reduced production error rate. Another problem to be solved is to provide an optoelectronic semiconductor component produced using such a method.

[0004] These objects are achieved, among other things, by the method and subject matter of the independent patent claims. Advantageous further developments and refinements are the subject matter of the dependent patent claims.

[0005] According to at least one embodiment, the method for producing an optoelectronic semiconductor component comprises a step A) in which a semiconductor chip produced by singulating a wafer is provided. The semiconductor chip is therefore already separated from other semiconductor chips that were produced at the same time. The semiconductor chip itself is also not intended to be further singulated into two or more smaller semiconductor chips. The wafer is, for example, a growth substrate for a plurality of semiconductor chips. For example, the semiconductor chip still comprises parts of the wafer with traces of a singulation process. For example, the wafer comprises or consists of Si, SiC, GaN, Ge, sapphire, metal, plastic, or glass.

[0006] According to at least one embodiment, the semiconductor chip comprises a substrate and one or more, in particular precisely one, semiconductor layer sequences applied, preferably directly applied, to a main side of the substrate. The semiconductor layer sequence comprises an active layer. The active layer preferably runs parallel or substantially parallel to the main side of the substrate.

[0007] The substrate can, for example, be the growth substrate for the semiconductor layer sequence. For example, the substrate is part of the singulated wafer. The substrate can comprise or consist of the same materials as those mentioned in connection with the wafer. The substrate can have traces of a singulation process, such as saw grooves, on side surfaces transverse to the main side. Furthermore, the lateral dimensions of the substrate, parallel to the main side of the substrate, are preferably substantially adapted to the lateral dimensions of the semiconductor layer sequence. For example, the lateral dimensions of the substrate amount to at least 80% or at least 100% and / or at most 200% or at most 120% of the lateral dimensions of the semiconductor layer sequence.

[0008] The semiconductor layer sequence is based, for example, on a III-V compound semiconductor material. The semiconductor material is, for example, a nitride compound semiconductor material, such as Al n In 1-n-m Ga m N, or a phosphide compound semiconductor material such as Al n In 1-n-m Ga m P, or an arsenide compound semiconductor material, such as Al n In 1-n-m Ga m As, where 0 ≤ n ≤ 1, 0 ≤ m ≤ 1, and m + n ≤ 1. The semiconductor layer sequence may contain dopants as well as additional components. For the sake of simplicity, however, only the essential components of the crystal lattice of the semiconductor layer sequence, i.e., Al, As, Ga, In, N, or P, are specified, even though these may be partially replaced and / or supplemented by small amounts of other substances. The semiconductor layer sequence is preferably based on AlInGaN.

[0009] The active layer has, for example, at least one pn junction and / or a quantum well structure in the form of a single quantum well, SQW for short, or in the form of a multi-quantum well structure, MQW for short.

[0010] According to at least one embodiment, the semiconductor layer sequence comprises one, in particular precisely one, active region for emitting or absorbing radiation. A sacrificial region is arranged adjacent to it in the lateral direction, i.e., in the direction parallel to the main side.

[0011] Preferably, the active region is configured to emit or absorb radiation throughout its entire lateral extent, forming a luminous or detection area there. For example, the active layer is formed contiguously within the active region. The active region can also form a pixelated or segmented luminous area.

[0012] According to at least one embodiment, the sacrificial region, unlike the active region, is not intended or configured to emit or absorb radiation. In particular, the sacrificial region does not contribute to the luminous area or the detection area. The sacrificial region preferably does not fulfill any optoelectronic function in the finished component. For example, the sacrificial region is not electrically contacted in the finished component.

[0013] Preferably, the semiconductor layer sequences in the active region and in the sacrificial region are identical in terms of layer structure. In particular, the heights or thicknesses of the semiconductor layer sequences in the active region and in the sacrificial region are the same.

[0014] According to at least one embodiment, a trench is introduced into the semiconductor layer sequence, penetrating the active layer and separating the active region from the sacrificial region. The trench is introduced into the semiconductor layer sequence, for example, from a side facing away from the substrate. Preferably, the active layer in the sacrificial region and the active layer in the active region are not formed contiguously. In a plan view of the semiconductor layer sequence, the sacrificial region is arranged, for example, in an edge region or corner region of the semiconductor layer sequence and is completely separated from the active region by the trench.

[0015] The lateral extent of the sacrificial region in one or more directions is preferably significantly smaller than the lateral extent of the active region in this direction or directions. For example, in a plan view of the semiconductor layer sequence, an area of ​​the sacrificial region is at most one-tenth, 1 / 50, or 1 / 100 of the area of ​​the active region.

[0016] For example, the lateral extent of the semiconductor layer sequence in one direction is at least 100 µm, 500 µm, or 1 mm. The lateral extent of the sacrificial region in this direction is, for example, at least 10 µm, 30 µm, or 50 µm. Alternatively or additionally, the lateral extent of the sacrificial region in this direction is at most 200 µm, 100 µm, or 60 µm.

[0017] The width of the trench, measured parallel to the main surface of the substrate, is, for example, at least 10 µm, 30 µm, or 50 µm. Alternatively or additionally, the width of the trench is at most 200 µm, 100 µm, or 60 µm.

[0018] According to at least one embodiment, in a step B), the semiconductor chip is applied to a carrier with the semiconductor layer sequence first. The carrier is preferably a mechanically self-supporting carrier that is suitable for mechanically supporting and stabilizing the semiconductor chips. The carrier can be, for example, a circuit board or a film or a wafer, for example a silicon wafer or a germanium wafer. In particular, the carrier can comprise or consist of plastic, metal, ceramic, glass, or a semiconductor material. The carrier can be permanently bonded to the semiconductor chip by applying the semiconductor chip, or it can be detached again later.

[0019] According to at least one embodiment, in a step C), the substrate is detached from the active region of the semiconductor layer sequence. In this case, the sacrificial region of the semiconductor layer sequence initially remains mechanically connected or at least partially connected to the substrate. In other words, in step C), the substrate is initially detached in the entire active region, but not in the entire sacrificial region. Although detachment can occur in a partial region of the sacrificial region before detachment in the active region, a mechanical connection between the substrate and the semiconductor layer sequence in the sacrificial region remains in place at least until the semiconductor layer sequence in the active region has been completely detached from the substrate.

[0020] During detachment, for example, a gap is formed between the substrate and the semiconductor layer sequence. This gap can be filled with air or another gas, or with solid or liquid substances that form during the detachment process. For example, when a sapphire substrate is detached from a GaN-based semiconductor layer sequence using a laser, liquid Ga droplets form in the gap. These droplets are created by the laser decomposing the uppermost GaN layers. The nitrogen escapes in the form of gas.

[0021] According to at least one embodiment, the method comprises a step D) following step C), in which the substrate is finally separated from the semiconductor layer sequence. This is achieved by detaching, in particular completely detaching, the substrate in the sacrificial region. For example, the space or gap between the semiconductor layer sequence and the substrate is extended into the sacrificial region. Subsequently, the substrate can be completely removed from the semiconductor layer sequence, so that no connection remains between the semiconductor layer sequence and the substrate. The semiconductor layer sequence is then mechanically stabilized, for example, only by the carrier.

[0022] In at least one embodiment, the method for producing an optoelectronic semiconductor component comprises a step A) in which a semiconductor chip produced by singulating a wafer is provided, wherein the semiconductor chip comprises a substrate and a semiconductor layer sequence with an active layer applied to a main side of the substrate. The semiconductor layer sequence has an active region for emitting or absorbing radiation and a sacrificial region arranged adjacent to it in a direction parallel to the main side. The sacrificial region is not provided for emitting or absorbing radiation on the finished semiconductor component. A trench introduced into the semiconductor layer sequence penetrates the active layer and separates the active region from the sacrificial region. In a step B), the semiconductor chip is applied to a carrier with the semiconductor layer sequence first.In step C), the substrate is detached from the active region of the semiconductor layer sequence, with the semiconductor layer sequence remaining mechanically connected to the substrate in the sacrificial region. Subsequently, in step D), the substrate is finally separated from the semiconductor layer sequence by detaching the substrate in the sacrificial region.

[0023] The invention described here is based, among other things, on the realization that when a substrate is removed from an individual component, such as a semiconductor chip, there is always a point on the individual component where the substrate is removed last. Due to, for example, explosive separation and tensions within the individual component, the semiconductor layer sequence located at this point is particularly vulnerable to damage from cracks.

[0024] The invention utilizes the idea of ​​forming a small sacrificial region in the semiconductor layer sequence, in which the substrate remains connected to the semiconductor layer sequence. During the final separation of the substrate, damage occurs only in the sacrificial region. The trench prevents this damage from spreading into the active region. Overall, this provides a method in which individual components can be separated from a substrate particularly efficiently and gently.

[0025] By using the sacrificial region, the individual semiconductor chips can be produced in a more space-efficient manner and thus with higher integration density. Typically, the semiconductor layer sequences of multiple semiconductor chips are grown on a common wafer or growth substrate. When dicing semiconductor chips, a sufficient distance of at least 30 µm, for example, must be maintained between two adjacent semiconductor layer sequences. This ensures that cracks that occur during the dicing of the wafer or growth substrate do not propagate into the semiconductor layers.

[0026] By using the sacrificial region, the distance required for separation between two adjacent semiconductor layer sequences can be reduced to values ​​less than or equal to 20 µm. This increases the integration density.

[0027] According to at least one embodiment, steps A) to D) are carried out in the specified order as separate method steps. Steps C) and D) can also flow seamlessly into one another, i.e., the detachment process can continue continuously from the active region into the sacrificial region.

[0028] The trench can be formed before the wafer is singulated into semiconductor chips. However, the trench can also be formed after step A) or after step B), but preferably before step C).

[0029] According to at least one embodiment, the method is used to produce a plurality of optoelectronic semiconductor components. In step B), a plurality of semiconductor chips produced by singulating a wafer are applied together, laterally adjacent to one another, on the carrier. The plurality of semiconductor chips can be designed like the semiconductor chip described above and below. Before step C), i.e., before the substrate is separated, each semiconductor chip has its own, uniquely assigned substrate. In particular, the substrates of the individual semiconductor chips are no longer connected to one another, but rather separated and spaced apart from one another.

[0030] According to at least one embodiment, the substrate remains intact during detachment in steps C) and D). In particular, the substrate is not destroyed or severely damaged. Only minor cracks may occur at the interface between the semiconductor layer sequence and the substrate. After a possible polishing step, the substrate can be reused, for example, as a growth substrate. In particular, the substrate is not reduced, or not noticeably reduced, in its lateral and / or vertical extent during the detachment process of steps C) and D). The substrate is preferably self-supporting and mechanically stable after separation.

[0031] To achieve this, a sacrificial layer, also based on a semiconductor material, can be used between the semiconductor layer sequence and the substrate. During the stripping process, for example, only the sacrificial layer is destroyed, not the substrate.

[0032] According to at least one embodiment, prior to steps C) and D), the trench completely penetrates the semiconductor layer sequence in the vertical direction, perpendicular to the lateral direction. The trench preferably extends all the way to the substrate. In particular, a bottom surface of the trench is formed in or on the substrate. Thus, no residue of the semiconductor layer sequence is present between the bottom surface of the trench and the substrate.

[0033] Because the trench extends all the way to the substrate, the sacrificial region is particularly securely separated from the active region, so that any damage in the sacrificial region can hardly spread to the semiconductor layer sequence in the active region.

[0034] According to at least one embodiment, in steps C) and D), the substrate is detached from the semiconductor layer sequence by a laser separation process, known as laser lift-off (LLO). The laser is preferably irradiated onto the substrate from a side facing away from the carrier. The diameter of the laser is preferably smaller than the width or smallest lateral extent of the sacrificial region. For example, the width of the sacrificial region is at least twice, five times, or ten times the diameter of the laser. This can further increase the probability that damage to the semiconductor layer sequence is limited to the sacrificial region.

[0035] The diameter of the laser beam can also be selected to be larger than the width of the sacrificial region, for example between 100 µm and 4 mm. In this case, the detachment is not achieved, for example, by a single laser pulse, but by scanning with only a slight offset between adjacent tracks, so that overlap regions are created where the laser beam hits the semiconductor layer sequence two or more times. The size of this overlap region then defines the size of the detachment region in which the detachment actually takes place. The detachment region can therefore be set to a diameter significantly smaller than 1 mm. Especially with larger laser beam diameters, the intensities are not homogeneous, but are distributed, for example, in a Gaussian shape across the diameter, so that the diameter of the detachment region can be set to the width of the sacrificial region or the trench.In particular, if the component is continuously scanned with the laser, it can be achieved that the detachment takes place last in the sacrificial area.

[0036] According to at least one embodiment, the sacrificial region forms a continuous path in a plan view of the semiconductor layer sequence, which runs completely around the active region of the semiconductor layer sequence. Preferably, the trench also forms a continuous path, which runs completely around the active region. In other words, the sacrificial region and / or the trench form a frame around the active region of the semiconductor layer sequence in a plan view. The width of the frame in the case of the sacrificial region lies, for example, within the above-mentioned limits for the lateral extent of the sacrificial region.

[0037] According to at least one embodiment, the semiconductor layer sequence comprises a plurality of sacrificial regions. The sacrificial regions are preferably also separated from one another by trenches as described above. Furthermore, each sacrificial region is preferably separated from the active region by a trench as described above. In a plan view of the semiconductor layer sequence, the sacrificial regions are arranged, for example, around the active region. For example, the sacrificial regions then also form a frame around the active region, wherein the frame is interspersed with trenches and thus has interruptions. The frame is therefore not continuous.

[0038] In the embodiment with multiple sacrificial regions, the semiconductor layer sequence remains connected to the substrate in only one sacrificial region, in multiple sacrificial regions, or in all sacrificial regions until final separation. The user of the method can decide for themselves in which of the multiple sacrificial regions the substrate remains connected to the semiconductor layer sequence until final separation.

[0039] According to at least one embodiment, the semiconductor layer sequence in the sacrificial region is removed after step D). On the finished component, the semiconductor layer sequence of the sacrificial region no longer has any function, for example, and can therefore be removed.

[0040] According to at least one embodiment, in step B), the semiconductor chip is permanently mechanically attached to the carrier and, for example, electrically contacted. In this case, the carrier is preferably a printed circuit board to which the semiconductor chip is soldered or glued.

[0041] According to at least one embodiment, after step D), the carrier is detached from the semiconductor chip. Preferably, the carrier is removed before the semiconductor layer sequence is removed in the sacrificial region. Cracks can also form in the semiconductor layer sequence during the detachment of the carrier. By using the sacrificial region, such cracks are preferentially shifted to the sacrificial region. Such cracks then break off at the trench and do not propagate into the active region of the semiconductor layer sequence.

[0042] According to at least one embodiment, an encapsulation layer is introduced into the trench prior to steps C) and D), preferably prior to the dicing of the semiconductor chips. The encapsulation layer preferably protects the semiconductor layer sequence from external influences.

[0043] In particular, the encapsulation layer is applied to the side surfaces and a bottom surface of the trench, so that the inner sides of the trench are preferably completely covered by the encapsulation layer. The encapsulation layer can, for example, comprise or consist of a silicon oxide, such as SiO2, or a silicon nitride, such as SiN.

[0044] The capsule layer particularly preferably has or consists of an absorption layer. The laser radiation irradiated for the detachment process is absorbed in the absorption layer. This absorption can further lead to decomposition of the capsule layer in the region of the trench. This ensures gentle separation of the substrate from the semiconductor layer sequence, since the capsule layer does not have to be mechanically separated in the region of the trench, for example, by tearing it off. This also prevents laser radiation from hitting the carrier in the region of the trench and damaging it there.

[0045] Damage can also occur in the encapsulation layer during the detachment process of the substrate and / or carrier and / or during the dicing of the semiconductor chips, which can reduce the aging resistance of the finished semiconductor component. However, by using the trench and the sacrificial region, damage within the encapsulation layer that can occur during the separation of the substrate and / or carrier and / or during the dicing of the semiconductor chips is also confined to the sacrificial region. Due to the trench, this damage cannot then spread to the active region, so that the active region remains optimally protected by the encapsulation layer.

[0046] According to at least one embodiment, the semiconductor chip is a sapphire chip. The substrate in this case is a sapphire growth substrate. The semiconductor layer sequence is based, for example, on AlInGaN and is grown on the substrate. The carrier is, for example, a Si wafer containing microelectronics.

[0047] Furthermore, an optoelectronic semiconductor component is specified. The optoelectronic semiconductor component can be manufactured, for example, using the described method. This means that all features disclosed in connection with the method are also disclosed for the semiconductor component, and vice versa.

[0048] According to at least one embodiment, the optoelectronic semiconductor component comprises a carrier on which a semiconductor layer sequence with an active layer is arranged. The active layer preferably runs substantially parallel to a main side of the carrier.

[0049] According to at least one embodiment, the semiconductor component has a trench that is introduced into the semiconductor layer sequence and extends completely through the semiconductor layer sequence. The trench preferably separates an active region of the semiconductor layer sequence from a sacrificial region of the semiconductor layer sequence arranged adjacent thereto in a lateral direction. The lateral direction is preferably a direction parallel to the main side of the carrier.

[0050] According to at least one embodiment, the sacrificial region forms an edge region of the semiconductor layer sequence. In particular, the sacrificial region is therefore not completely surrounded by the active region of the semiconductor layer sequence in plan view.

[0051] According to at least one embodiment, in the active region, radiation is emitted or absorbed by the active layer during normal operation of the optoelectronic semiconductor component. In the sacrificial region, however, the active layer and / or the semiconductor layer sequence may be damaged, so that the sacrificial region is less or not at all suitable for emitting or absorbing radiation. In particular, the sacrificial region is not intended or configured for emitting or absorbing radiation at all, or does not contribute to this.

[0052] According to at least one embodiment, the semiconductor layer sequence is free of its growth substrate. This means that the growth substrate is detached from the finished semiconductor component. In particular, no mechanically self-supporting substrate or a further self-supporting carrier is arranged downstream of the semiconductor layer sequence in the direction away from the carrier. For example, the semiconductor layer sequence, together with any passivation layer on the semiconductor layer sequence, forms a radiation entrance surface or radiation exit surface of the semiconductor component.

[0053] According to at least one embodiment, the semiconductor component is manufactured using the method described above.

[0054] A method described here for producing an optoelectronic semiconductor component and an optoelectronic semiconductor component are explained in more detail below with reference to drawings using exemplary embodiments.

[0055] Identical reference symbols indicate identical elements in the individual figures. However, the figures are not drawn to scale; rather, individual elements may be exaggerated for clarity.

[0056] They show: Fig. 1A to 1E various positions in an alternative manufacturing process in side view and top view, Fig. 2A to 2E and 3 different positions in embodiments of a manufacturing method described here in plan view and in side view, Fig. 2E to 2L show embodiments of optoelectronic semiconductor components described here in plan view and Fig. 3 a position in an embodiment of a manufacturing method described here in side view.

[0057] In the Fig. 1A to 1E first show an alternative manufacturing process for semiconductor components.

[0058] In Fig. 1A shows a first position in which two semiconductor chips 1 are mounted on a carrier 2. Each of the semiconductor chips 1 is permanently attached to the carrier 2 by means of a solder material 4 or an adhesive 4. The semiconductor chips 1 comprise a semiconductor layer sequence 11 with an active layer 12. The active layer 12 is intended, for example, for emitting or absorbing radiation during normal operation. The main extension direction of the active layer 12 runs essentially parallel to the main side of the carrier 2.

[0059] In the direction away from the carrier 2, a substrate 10 is arranged downstream of each semiconductor layer sequence 11 of each semiconductor chip 1. The semiconductor layer sequences 11 are each applied directly to a main side 110 of the corresponding substrate 10. The substrate 10 is, for example, a growth substrate for the semiconductor layer sequence 11, for example, a sapphire substrate.

[0060] The semiconductor chips 1 are mounted on the carrier 2 in a lateral direction, parallel to the main side of the carrier 2, next to one another and spaced apart from one another. The distance between the two semiconductor chips 1 on the carrier 2 is, for example, between 5 µm and 1 cm.

[0061] In Fig. 1B shows a subsequent position in the process, in which the substrates 10 are detached from the semiconductor layer sequences 11. This occurs in the present case with a laser, in a so-called laser lift-off process. For example, the laser radiation dissolves or destroys a sacrificial layer based on a semiconductor material between the semiconductor layer sequence 11 and the substrate 10, so that the substrate 10 can be separated from the semiconductor layer sequence 11.

[0062] It can be seen in Fig. 1B, the semiconductor layer sequence 11 and the substrate 10 remain connected to one another in an edge region until the final separation of the substrate 10. Increased stresses occur within the semiconductor layer sequence in this edge region, so that the semiconductor layer sequence 11 can be damaged in the edge region during the final separation of the substrate. This is represented here by the dotted areas in the semiconductor layer sequence 11.

[0063] In the Fig. 1C to 1E show exemplary top views of semiconductor layers 11 after the substrate 10 has been removed. Depending on whether the laser was scanned diagonally, transversely, or longitudinally across the substrate, the damage to the semiconductor layer sequence 11 occurs in a corner region, a transverse region, or a longitudinal region. These regions of the semiconductor layer sequence 11 may be damaged to such an extent that they are no longer suitable for emitting or absorbing radiation.

[0064] In the Fig. 2A to 2D show an embodiment of the manufacturing method described here, in which the aforementioned problem is solved.

[0065] In Fig. Figure 2A shows a first position in the process, in which two semiconductor chips 1 produced by singulating a wafer are applied to a carrier 2 with a semiconductor layer sequence 11 leading. On a side of the semiconductor layer sequence 11 facing away from the carrier 2, each semiconductor chip 1 also has a substrate 10, for example, the growth substrate for the semiconductor layer sequence 11. The substrates 10 of the individual semiconductor chips 1 are not connected to one another.

[0066] The semiconductor layer sequence 11 is based, for example, on a III-nitride semiconductor material. The substrates 10 are, for example, sapphire substrates. The carrier 2 is, for example, a carrier containing microelectronics.

[0067] Solder material 4 or adhesive 4 is provided both on the carrier 2 and on the semiconductor layer sequence 11.

[0068] In Fig. 2A are different than in Fig. 1A, the semiconductor layer sequences 11 of the individual semiconductor chips 1 are separated in the lateral direction into two regions, namely a sacrificial region 14 and an active region 13.

[0069] The active region 13 is separated from the sacrificial region 14 by a trench 15 that extends completely through the semiconductor layer sequence 11 and reaches the substrate 10. The active region 13 of the semiconductor layer sequence 11 is the region that is intended for the emission or absorption of radiation in the later finished semiconductor component 100. The sacrificial regions 14, in contrast, are not intended for the emission or absorption of radiation.

[0070] In Fig. Figure 2B shows a position in the process in which the semiconductor chips 1 are applied to the carriers 2 and are soldered or glued to the carrier 2. In this way, the semiconductor chips 1 are electrically contacted with the carrier 2 and permanently connected to the carrier 2.

[0071] In Fig. 2C is one of the semiconductor chips 1 from the position of Fig. 2B shows a plan view of the substrate 10. It can be seen that the sacrificial region 14 forms a continuous path that runs completely around the active region 13. Likewise, the trench 15 forms a continuous path that runs completely around the active region 13. In other words, the sacrificial region 14 and the trench 15 each form a continuous frame around the active region 13.

[0072] In Fig. Figure 2D shows a position in the process in which the substrates 10 are each detached from the semiconductor layer sequence 11 of the semiconductor chips 1 by means of a laser. The laser is irradiated onto the substrate 10 from a side facing away from the carrier 2. The substrate 10 itself is essentially transparent and non-absorbent for the laser. The laser radiation is only absorbed at the interface between the semiconductor layer sequence 11 and the substrate 10, for example in the region of a sacrificial layer of the semiconductor layer sequence 11, resulting in the substrate 10 being detached from the semiconductor layer sequence 11. For example, the laser scans the interface between the substrate 10 and the semiconductor layer sequence 11 point by point or continuously.

[0073] In Fig. Figure 2D shows how the laser causes the substrate 10 to detach from the semiconductor layer sequence 11 in the active region 13. In the sacrificial region 14, the semiconductor layer sequence 11 is still connected to the substrate 10. Subsequently, the substrate 10 is also detachable from the semiconductor layer sequence 11 in the sacrificial region 14, thereby finally separating it from the semiconductor layer sequence 11. The substrate 10 remains essentially intact, i.e., after separation, it shows no damage except for, for example, minor cracks on the surface. For example, the substrate 10 can be reused for a subsequent growth process.

[0074] An embodiment of an optoelectronic semiconductor component 100 after separating the substrate 10 is shown in the Fig. 2E. The semiconductor component 100 is shown in a plan view of the semiconductor layer sequence 11. The frame-like sacrificial region 14 and the frame-like trench 15, which extend all around the active region 13, can again be seen. Damage to the semiconductor layer sequence 11 occurs only in the corner region of the sacrificial region 14, in which the substrate 10 has remained connected to the semiconductor layer sequence 11 until the end. The damage in the sacrificial region 14 has not spread to the active region 13, since the trench 15 has prevented cracks or damage from spreading from the sacrificial region 14 into the active region 13. The active region 13 can then optimally contribute to the absorption or emission of radiation along its entire lateral extent.

[0075] In the Fig. 2F to 2L show various embodiments of a semiconductor component 100, again in plan view. The respective semiconductor components 100 differ, in particular, with regard to the configuration of the sacrificial region 14.

[0076] In Fig. 2F, four sacrificial regions 14 are present, each of which has an L-shaped cross-section in plan view and each surrounds corner regions of the active region 13. Damage is only evident in the sacrificial region 14 in which the substrate 10 was last detached from the semiconductor layer sequence 11.

[0077] In Fig. 2G, eight sacrificial regions 14 are present, which, in plan view, extend all around the active region 13. L-shaped sacrificial regions 14 are arranged in the corner regions of the active region 13. Overall, the sacrificial regions 14 form a frame around the active region 13, which is interrupted at some points by trenches 15. The interruptions between the sacrificial regions allow gaseous separation products to escape, which can reduce the pressure and thus the stress during separation.

[0078] In Fig. 2H, four sacrificial regions 14 are arranged at the corners of the active region 13, forming cuboid-shaped, square, or dot-shaped structures. Here, too, only the sacrificial region 14 is damaged where the substrate remains connected to the semiconductor layer sequence 11 until the end.

[0079] In Fig. 2I, a plurality of sacrificial regions 14 are arranged around the active region 13. The sacrificial regions 14 each have a square, rectangular, or dot-shaped basic shape. The sacrificial regions 14 are spaced apart from one another by trenches 15.

[0080] In Fig. 2J, the active region 13 is completely surrounded by two sacrificial regions 14. Each sacrificial region 14 forms a continuous path around the active region 13. In other words, the active region 13 is surrounded by two frame-like sacrificial regions 14. A frame-like trench 15 is formed between the active region 13 and the nearest sacrificial region 14. The sacrificial regions 14 are also separated from one another by a frame-like trench 15 around the active region 13. The sacrificial regions 14 each have damage in a corner region that does not extend to the active region 13.

[0081] Such a plurality of consecutive sacrificial areas increases the mechanical stability and better prevents tilting of the substrate during detachment.

[0082] In Fig. 2K, an embodiment of a semiconductor device 100 is shown, which essentially corresponds to the embodiment of Fig. 2J. Unlike in Fig. 2J, however, the inner of the two frames is partially interrupted by a trench 15. The outer sacrificial region 14, on the other hand, runs continuously and uninterrupted around the active region 13.

[0083] In the embodiment of the Fig. 2L, in contrast to the previous embodiments, the active region 13 and the frame-like sacrificial regions 14 are not square, but rectangular. Overall, the semiconductor component 100 of the Fig. 2L does not have a square, but rather a rectangular basic shape. However, round, oval, or triangular active regions 13 or semiconductor components 100 are also conceivable.

[0084] In the embodiment of the Fig. 3 shows a position in a method step for producing optoelectronic semiconductor components 100, which essentially corresponds to the position of the Fig. 2D. Unlike in Fig. 2D, however, an encapsulation layer 3 is applied to the side surfaces of the semiconductor layer sequence 11 throughout the entire area of ​​the trench 15. The encapsulation layer 3 completely covers all sides of the semiconductor layer sequence 11 that are not covered by the substrate 10 or the carrier 2. In particular, the encapsulation layer 3 also completely covers a bottom region of the trench 15.

[0085] The encapsulation layer 3 can, for example, be a SiN layer that protects the semiconductor layer sequence 11 from external influences, such as the ingress of moisture. When the substrate 10 is removed or the semiconductor chips 1 are singulated, any cracks within the encapsulation layer 3 are not transferred to the active region 13. The active region 13 preferably remains well protected by the encapsulation layer 3. Cracks within the encapsulation layer 3 already break off in the area of ​​overmolded edges at the sacrificial region 14 and do not propagate into the active region 13.

[0086] Advantageously, the encapsulation layer 3 can also have an absorption layer that absorbs the incident laser radiation. If the laser beam reaches the area of ​​the trench 15, it can impinge on the carrier 2 there without such an absorbing layer and damage it. The absorbing layer ensures that the laser beam is at least partially absorbed and does not irradiate and thus damage the carrier 2. Particularly advantageously, the encapsulation layer 3 is decomposed upon irradiation of the laser beam, so that the substrate 10 can be easily removed in the area of ​​the trench 15. List of reference symbols 1 semiconductor chip 2 carriers 3 capsule layer 4 Solder material / adhesive 10 Substrat 11 Semiconductor layer sequence 12 active layer 13 active area 14 Victims area 15 trench 100 optoelectronic semiconductor component 110 Main page of the substrate 10

Claims

[1] Method for producing an optoelectronic semiconductor component (100) comprising the steps: A) Providing a semiconductor chip (1) produced by singulating a wafer, wherein - the semiconductor chip (1) comprises a substrate (10) and a semiconductor layer sequence (11) with an active layer (12) applied to a main side (110) of the substrate (10), - the semiconductor layer sequence (11) has exactly one active region (13) for the emission or absorption of radiation and a sacrificial region (14) arranged next to it in the direction parallel to the main side (110), - the sacrificial region (14) on the finished semiconductor component (100) is not intended for the emission or absorption of radiation, - a trench (15) introduced into the semiconductor layer sequence (11) penetrates the active layer (12) and separates the active region (13) from the sacrificial region (14), - the active layer (12) is formed continuously within the active region (13); B) applying the semiconductor chip (1) with the semiconductor layer sequence (11) first onto a carrier (2); C) detaching the substrate (10) from the active region (13) of the semiconductor layer sequence (11), wherein in the sacrificial region (14) the semiconductor layer sequence (11) remains mechanically connected to the substrate (10); D) subsequently finally separating the substrate (10) from the semiconductor layer sequence (11) by detaching the substrate in the sacrificial region (14). [2] Method according to claim 1, with which a plurality of optoelectronic semiconductor components (100) are produced, wherein - in step B), several semiconductor chips (1) produced by singulating a wafer are applied together, laterally next to one another, on the carrier (2), - each semiconductor chip (1) has its own, uniquely assigned substrate (10) before step C). [3] Method according to claim 1 or 2, wherein the substrate (2) - remains intact when removed in steps C) and D), - is self-supporting and mechanically stable after separation. [4] Method according to one of the preceding claims, wherein the substrate (10) is a growth substrate of the semiconductor layer sequence (11). [5] Method according to one of the preceding claims, wherein before steps C) and D) the trench (15) completely penetrates the semiconductor layer sequence (11) in the vertical direction, perpendicular to the lateral direction, and reaches as far as the substrate (10). [6] Method according to one of the preceding claims, wherein the substrate (10) is detached from the semiconductor layer sequence (11) in steps C) and D) by a laser separation process. [7] Method according to one of the preceding claims, wherein the sacrificial region (14) forms a continuous path in plan view of the semiconductor layer sequence (11) which runs completely around the active region (13) of the semiconductor layer sequence (11). [8] Method according to one of the preceding claims, wherein - the semiconductor layer sequence (11) has a plurality of sacrificial regions (14), - the sacrificial areas (14) are separated from each other by trenches (15), - the sacrificial regions (14) are arranged around the active region (13) in a plan view of the semiconductor layer sequence (11). [9] Method according to one of the preceding claims, wherein after step D) the semiconductor layer sequence (11) in the sacrificial region (14) is removed. [10] Method according to one of the preceding claims, wherein in step B) the semiconductor chip (1) is mechanically and permanently fixed to the carrier (2) and is electrically contacted. [11] Method according to one of claims 1 to 9, wherein after step D) the carrier (2) is detached from the semiconductor chip (1). [12] Method according to one of the preceding claims, wherein prior to steps C) and D) an encapsulation layer (3) is introduced into the trench (15) which protects the semiconductor layer sequence (1) from external influences. [13] Method according to one of the preceding claims, wherein: - the substrate (10) is a sapphire growth substrate, - the semiconductor layer sequence (11) comprises AlInGaN and is grown on the substrate (10), - the carrier (2) is a Si wafer containing microelectronics. [14] Optoelectronic semiconductor component (100) comprising: - a carrier (2), - a semiconductor layer sequence (11) arranged on the carrier (2) with an active layer (12) running parallel to a main side of the carrier (2), - a trench (15) in the semiconductor layer sequence (11) which extends completely through the semiconductor layer sequence (11), wherein - the trench (15) separates exactly one active region (13) of the semiconductor layer sequence (11) from a sacrificial region (14) of the semiconductor layer sequence (11) arranged adjacent thereto in the lateral direction, parallel to the main side of the carrier (2), - the sacrificial region (14) forms an edge region of the semiconductor layer sequence (11), - in the active region (13) radiation is emitted or absorbed by the active layer (12) during normal operation, - in the sacrificial region (14) the active layer (12) and / or the semiconductor layer sequence (11) are damaged, - the sacrificial region (14) is not intended to emit or absorb radiation, - the semiconductor layer sequence (11) is free from its growth substrate, - no mechanically self-supporting substrate or further carrier is arranged downstream of the semiconductor layer sequence (11) in the direction away from the carrier (2), - the active layer (12) is formed continuously within the active region (13), - the semiconductor component (100) comprises a plurality of sacrificial regions (14) arranged one behind the other.

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