Substrate processing method and substrate processing apparatus

Abstract

To provide a substrate processing method and a substrate processing apparatus that improve etching resistance and suppress membrane stress.SOLUTION: A substrate processing method for forming a carbon-based film on a substrate, comprises: a step of mounting the substrate on a mounting stage; a first film formation step of forming a first carbon-based film having a first stress; a second film formation step of forming a second carbon-based film having a second stress; and a third film formation step of forming a laminate of the first and second carbon-based films by repeating the first and second film formation steps. The first carbon-based film is a PLC (Polymer Like Carbon) film, and the second carbon-based film is a DLC (Diamond Like Carbon) film.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing method and a substrate processing apparatus. [Background technology]

[0002] For example, it is known to use a hard mask containing carbon as an etching mask.

[0003] Patent Document 1 discloses a method for forming an amorphous carbon layer, the method including depositing an amorphous carbon layer on an underlayer, patterning the amorphous carbon layer, etching at least a portion of the amorphous carbon layer, injecting a dopant into the amorphous carbon layer by tilt processing, and etching the underlayer. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Special Publication No. 2017-507477 Summary of the Invention [Problem to be solved by the invention]

[0005] In one aspect, the present disclosure provides a substrate processing method and a substrate processing apparatus that improves etching resistance and suppresses film stress. [Means for solving the problem]

[0006] In order to solve the above problem, according to one aspect, there is provided a substrate processing method for forming a carbon-based film on a substrate, the substrate processing method including a step of placing the substrate on a mounting table, a first film formation step of forming a first carbon-based film having a first stress, a second film formation step of forming a second carbon-based film having a second stress, and a third film formation step of repeating the first film formation step and the second film formation step to form a laminate of the first carbon-based film and the second carbon-based film, wherein the first carbon-based film is a PLC (Polymer Like Carbon) film, and the second carbon-based film is a DLC (Diamond Like Carbon) film. Effect of the Invention

[0007] According to one aspect, it is possible to provide a substrate processing method and a substrate processing apparatus that improve etching resistance and suppress film stress. [Brief description of the drawings]

[0008] [Figure 1] FIG. 2 is a schematic cross-sectional view showing an example of a processing apparatus according to the present embodiment. [Diagram 2] 5 is a flowchart showing an example of an operation of the processing device according to the embodiment. [Diagram 3] 1 is a schematic cross-sectional view of a wafer on which a laminate has been formed by the processing apparatus according to the embodiment; [Figure 4] FIG. 2 is a schematic diagram illustrating a bonding state of carbon. [Diagram 5] 4 is an example of a time chart for forming a laminate. [Figure 6] 1 is a graph showing an example of a Raman spectrum. [Figure 7] 1 is a graph showing an example of stress and etching resistance of a laminate; [Figure 8] 13 is another example of a time chart for forming a laminate. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and duplicated descriptions may be omitted.

[0010] [Processing Device] A substrate processing apparatus 1 according to this embodiment will be described with reference to Fig. 1. Fig. 1 is a schematic cross-sectional view showing an example of the substrate processing apparatus 1 according to this embodiment. The substrate processing apparatus 1 is an apparatus for forming a carbon-based film (a laminate 220 of carbon-based films, which will be described later in Fig. 3) on a substrate W such as a wafer by a CVD (Chemical Vapor Deposition) method in a processing chamber 2 under reduced pressure.

[0011] The substrate processing apparatus 1 includes a substantially cylindrical airtight processing vessel 2. An exhaust chamber 21 is provided in the center of the bottom wall of the processing vessel 2.

[0012] The exhaust chamber 21 has, for example, a substantially cylindrical shape that protrudes downward. An exhaust flow path 22 is connected to the exhaust chamber 21, for example, at a side surface of the exhaust chamber 21. An exhaust unit 24 is connected to the exhaust flow path 22 via a pressure adjustment unit 23. The pressure adjustment unit 23 includes, for example, a pressure adjustment valve such as a butterfly valve. The exhaust flow path 22 is configured so that the inside of the processing vessel 2 can be decompressed by the exhaust unit 24. A transfer port 25 is provided at a side surface of the processing vessel 2. The transfer port 25 is configured so as to be freely opened and closed by a gate valve 26. The substrate W is loaded and unloaded between the inside of the processing vessel 2 and a transfer chamber (not shown) via the transfer port 25.

[0013] A mounting table 3 for holding the substrate W substantially horizontally is provided in the processing vessel 2. The mounting table 3 is formed in a substantially circular shape in a plan view, and is supported by a support member 31. A substantially circular recess 32 for mounting the substrate W having a diameter of, for example, 300 mm is formed on the surface of the mounting table 3. The recess 32 has an inner diameter that is slightly larger (for example, about 1 mm to 4 mm) than the diameter of the substrate W. The depth of the recess 32 is configured to be substantially the same as the thickness of the substrate W. The mounting table 3 is formed of a ceramic material such as aluminum nitride (AlN). The mounting table 3 may be formed of a metal material such as nickel (Ni). Instead of the recess 32, a guide ring for guiding the substrate W may be provided on the periphery of the surface of the mounting table 3.

[0014] A lower electrode 33 is embedded in the mounting table 3. A temperature adjustment mechanism 34 is embedded below the lower electrode 33. The temperature adjustment mechanism 34 adjusts the temperature of the substrate W placed on the mounting table 3 to a set temperature based on a control signal from the control unit 9. When the mounting table 3 is entirely made of metal, the entire mounting table 3 functions as the lower electrode, so that the lower electrode 33 does not need to be embedded in the mounting table 3.

[0015] An RF power supply 35 is connected to the lower electrode 33 via a matching unit 351. The RF power supply 35 applies low frequency power (LF) having a frequency lower than that of an RF power supply 51 described later, to the lower electrode 33. The high frequency power generated by the RF power supply 35 is used as a bias high frequency power for attracting ions into the substrate W. The frequency of the RF power supply 35 is, for example, 13.56 MHz.

[0016] The mounting table 3 is provided with a plurality of (e.g., three) lift pins 41 for holding and lifting the substrate W mounted on the mounting table 3. The material of the lift pins 41 may be, for example, ceramics such as alumina (Al2O3) or quartz. The lower ends of the lift pins 41 are attached to a support plate 42. The support plate 42 is connected via a lift shaft 43 to a lift mechanism 44 provided outside the processing chamber 2.

[0017] The lifting mechanism 44 is installed, for example, at the bottom of the exhaust chamber 21. The bellows 45 is provided between the lifting mechanism 44 and an opening 211 for the lifting shaft 43 formed in the bottom surface of the exhaust chamber 21. The support plate 42 may be shaped so that it can be raised and lowered without interfering with the support member 31 of the mounting table 3. The lifting pins 41 are configured to be freely raised and lowered between the upper side and the lower side of the surface of the mounting table 3 by the lifting mechanism 44. In other words, the lifting pins 41 are configured to be able to protrude from the top surface of the mounting table 3.

[0018] Furthermore, the lower end of the support member 31 penetrates the opening 212 of the exhaust chamber 21, and is supported by a lifting mechanism 46 via a lifting plate 47 disposed below the processing vessel 2. A bellows 48 is provided between the bottom of the exhaust chamber 21 and the lifting plate 47, so that the airtightness inside the processing vessel 2 is maintained even when the lifting plate 47 moves up and down.

[0019] The lifting mechanism 46 lifts and lowers the lifting plate 47, thereby lifting and lowering the mounting table 3. In this way, the gap between the mounting table 3 and the gas supply unit 5 can be adjusted.

[0020] A gas supply unit 5 is provided on the ceiling wall 27 of the processing vessel 2 via an insulating member 28. The gas supply unit 5 constitutes an upper electrode and faces the lower electrode 33. An RF power supply 51 is connected to the gas supply unit 5 via a matching unit 511. The RF power supply 51 applies high frequency power having a higher frequency than the frequency of the RF power supply 35 to the upper electrode (gas supply unit 5). The high frequency power generated by the RF power supply 51 is used as high frequency power for generating plasma required for film formation on the substrate W. The frequency of the RF power supply 51 is, for example, a VHF (Very High Frequency) band of 100 MHz to 300 MHz. An RF electric field is generated between the upper electrode (gas supply unit 5) and the lower electrode 33 by supplying RF power from the RF power supply 51 to the upper electrode (gas supply unit 5). The gas supply unit 5 includes a hollow gas diffusion chamber 52. A number of holes 53 for dispersing and supplying the processing gas into the processing vessel 2 are arranged, for example, evenly, on the lower surface of the gas diffusion chamber 52. A heating mechanism 54 is embedded in the gas supply unit 5, for example, above the gas diffusion chamber 52. The heating mechanism 54 is heated to a set temperature by being supplied with power from a power supply unit (not shown) based on a control signal from the control unit 9.

[0021] A gas supply path 6 is provided in the gas diffusion chamber 52. The gas supply path 6 is in communication with the gas diffusion chamber 52. A gas source 61 is connected to the upstream side of the gas supply path 6 via a gas line 62. The gas source 61 includes, for example, various processing gas supply sources, mass flow controllers, and valves (none of which are shown). The various processing gases include a film formation gas containing carbon atoms (for example, CH 4 , C 2 H 2 , C 3 H 6 , C 2 H 4 In addition, various process gases are used in combination with a carrier gas (e.g., H 2 , Ar, He, O 2 , N 2 ) Various process gases are introduced into the gas diffusion chamber 52 from a gas source 61 via a gas line 62.

[0022] The substrate processing apparatus 1 includes a control unit 9. The control unit 9 is, for example, a computer, and includes a CPU (Central Processing Unit), a RAM (Random Access Memory), a ROM (Read Only Memory), an auxiliary storage device, etc. The CPU operates based on a program stored in the ROM or the auxiliary storage device, and controls the operation of the substrate processing apparatus 1. The control unit 9 may be provided inside or outside the substrate processing apparatus 1. When the control unit 9 is provided outside the substrate processing apparatus 1, the control unit 9 can control the substrate processing apparatus 1 by a communication means such as a wired or wireless communication means.

[0023] <Operation of the substrate processing apparatus 1> Next, an example of the operation of the substrate processing apparatus 1 according to this embodiment will be described with reference to Fig. 2 and Fig. 3. Fig. 2 is a flow chart showing an example of the operation of the substrate processing apparatus 1 according to this embodiment. Fig. 3 is a schematic cross-sectional view of a substrate W on which a carbon-based film stack (e.g., a hard mask) 220 has been formed by the substrate processing apparatus 1 according to this embodiment.

[0024] In step S101, the control unit 9 prepares a substrate W. The control unit 9 controls a transfer device (not shown) to place the substrate W on the placement table 3 of the substrate processing apparatus 1. Here, the substrate W placed on the placement table 3 has a target film 210 formed on a Si substrate 200 (see FIG. 3). The substrate processing apparatus 1 forms a carbon-based film stack 220 on the target film 210 of the substrate W. The carbon-based film stack 220 is used as, for example, a hard mask. The target film 210 is a film in which a structure such as a trench, a channel, or a hole is formed by dry etching through a pattern formed in the stack 220. When the transfer device retreats from the transfer port 25, the control unit 9 closes the gate valve 26.

[0025] In step S102, the control unit 9 forms a first film (first carbon-based film) 221 having a first stress on the substrate W. The direction of the stress of the first film 221 (the direction of the first stress) is, for example, compressive stress. Here, the first film 221 is a carbon film, for example, a PLC (Polymer Like Carbon) film described later.

[0026] Here, the control unit 9 controls the temperature adjustment mechanism 34 to set the temperature of the substrate W to a predetermined temperature. The temperature adjustment mechanism 34 also controls the pressure adjustment unit 23 and the exhaust unit 24 to set the inside of the processing chamber 2 to a predetermined pressure. The control unit 9 also controls the gas source 61 to supply gas into the processing chamber 2. The control unit 9 also controls the RF power supply 51 to apply high frequency power (VHF) to the upper electrode (gas supply unit 5). Meanwhile, during the formation of the first film 221, the RF power supply 35 is configured not to apply low frequency power (LF) to the lower electrode 33.

[0027] An example of the recipe in step S102 is shown below. Gap between the stage and the gas supply unit: 10mm to 80mm CH 4 Gas supply: 10sccm~500sccm Pressure inside processing vessel: 5mTorr to 100mTorr High frequency power (VHF): 220MHz, 100W~3000W Low frequency power (LF): 13.56MHz, 0W Mounting table temperature: 20℃~200℃

[0028] In step S103, the control unit 9 forms a second film (second carbon-based film) 222 having a second stress on the substrate W. The direction of the stress of the second film 222 (second stress direction) is, for example, compressive stress, and is the same as the direction of the stress of the first film 221 (first stress direction). The stress of the first film 221 (first stress) and the stress of the second film 222 (second stress) have different strengths. Here, the second film 222 is a carbon film, for example, a DLC (Diamond Like Carbon) film described later.

[0029] Here, the control unit 9 controls the temperature adjustment mechanism 34 to set the temperature of the substrate W to a predetermined temperature. The temperature adjustment mechanism 34 also controls the pressure adjustment unit 23 and the exhaust unit 24 to set the inside of the processing chamber 2 to a predetermined pressure. The control unit 9 also controls the gas source 61 to supply gas into the processing chamber 2. The control unit 9 also controls the RF power supply 51 to apply high frequency power (VHF) to the upper electrode. The control unit 9 also controls the RF power supply 35 to apply low frequency power (LF) to the lower electrode.

[0030] An example of the recipe in step S103 is shown below. Gap between the stage and the gas supply unit: 10mm to 80mm CH 4 Gas supply: 10sccm~500sccm Pressure inside processing vessel: 5mTorr to 100mTorr High frequency power (VHF): 220MHz, 100W~3000W Low frequency power (LF): 13.56MHz, 100W~3000W Mounting table temperature: 20℃~200℃

[0031] In step S104, the control unit 9 judges whether the deposition of the first film 221 and the second film 222 on the substrate W has been repeated a predetermined number of times. If the deposition has not been repeated the predetermined number of times (S104·No), the process by the control unit 9 returns to step S102, and the deposition of the first film 221 (S102) and the deposition of the second film 222 (S103) are repeated. If the deposition has been repeated the predetermined number of times (S104·Yes), the process by the control unit 9 ends. As a result, a stack 220 in which the first film 221 and the second film 222 are alternately deposited on the target film 210 of the substrate W is deposited.

[0032] Next, the PLC film as the first film 221 and the DLC film as the second film 222 will be further described with reference to Figs. 3 and 4. Fig. 4 is a schematic diagram for explaining the bond state of carbon. Fig. 4(a) shows a structure of sp 3 An example of a carbon skeleton formed by bonds. Figure 4(b) shows the sp 2 4 is an example of a carbon skeleton structure formed by bonds. In addition, in Fig. 4, black circles and white circles represent carbons. Also, one bond structure is clearly indicated by a white circle.

[0033] The DLC film has a short-range order of sp 3 The sp bonds and the sp 2 DLC films are carbon-based films with an irregular amorphous structure that has no long-range order and has a mixture of both sp and β bonds. 3 DLC films contain many bonds. DLC films also contain less hydrogen (H) than PLC films. DLC films also have resistance to dry etching. DLC films also have strong compressive stress.

[0034] The PLC film has a short-range order, as shown in Fig. 4(a). 3 The sp bonds and the sp 2 The PLC film is a carbon-based film with an irregular amorphous structure that has no long-range order and has a mixture of both sp and DLC bonds. 3There are fewer bonds. PLC films also contain more hydrogen (H) than DLC films. PLC films also have a weaker compressive stress than DLC films.

[0035] 3, the stack 220 formed by the substrate processing apparatus 1 according to this embodiment is formed by alternately depositing a PLC film (first film 221) and a DLC film (second film 222). Here, the film stress in the first film 221 and the second film 222 is indicated by an outlined arrow. The direction of the arrow indicates the direction of the film stress, and the length of the arrow indicates the strength of the stress.

[0036] By alternately depositing a PLC film (first film 221) having a weak compressive stress and a DLC film (second film 222) having a strong compressive stress to form the laminate 220, the stress of the laminate 220 can be reduced compared to the case where a carbon-based film laminate (hard mask) is formed using only DLC films.

[0037] Furthermore, since the laminate 220 includes a DLC film (second film 222) having high dry etching resistance, the dry etching resistance of the laminate 220 can be improved.

[0038] Moreover, the bottommost film of the laminate 220 is preferably a PLC film (first film 221) having a weak compressive stress. The first film 221 that is in direct contact with the target film 210 has a weak compressive stress, so that the adhesion between the target film 210 and the first film 221 can be increased. This makes it possible to prevent the film of the laminate 220 from peeling off.

[0039] In the above description, the laminate 220 is formed by alternately stacking the PLC film and the DLC film in this order from the surface of the target film 210, but this is not limiting. The laminate 220 may be formed by alternately stacking the DLC film and the PLC film in this order from the surface of the target film 210. The first DLC film that contacts the surface of the target film 210 may have a thin film thickness. As a result, even if the first film 221 that directly contacts the target film 210 is a DLC film, the thickness is reduced to suppress the compressive stress and increase the adhesion between the target film 210 and the first film 221. As a result, peeling of the laminate 220 can be prevented.

[0040] 5 is an example of a time chart for forming the laminate 220. Here, the application of high frequency power (VHF) from the RF power supply 51 to the upper electrode (gas supply unit 5) and the application of low frequency power (LF) from the RF power supply 35 to the lower electrode 33 will be described.

[0041] In FIG. 5(a), only high frequency power (VHF) is applied over the entire film formation time. That is, the ratio of the application time of high frequency power (VHF) to the entire film formation time is 100%. In this case, a PLC film is formed as the laminate 220. On the other hand, in FIG. 5(d), high frequency power and low frequency power (VHF+LF) are applied over the entire film formation time. That is, the ratio of the application time of only high frequency power (VHF) to the entire film formation time is 0%. In this case, a DLC film is formed as the laminate 220.

[0042] In Fig. 5(b) and Fig. 5(c), application of only high frequency power (VHF) and application of high frequency power and low frequency power (VHF+LF) are repeated. In Fig. 5(b), the ratio of the application time of high frequency power (VHF) to the total film formation time is 40%. In Fig. 5(c), the ratio of the application time of high frequency power (VHF) to the total film formation time is 13%. In this way, a laminate 220 is formed in which PLC films and DLC films are alternately formed.

[0043] Fig. 6 is a graph showing an example of a Raman spectrum. Here, the measurement results of Raman spectroscopy for the laminate 220 formed according to the time charts shown in Fig. 5(a) to Fig. 5(c) are shown. The horizontal axis of Fig. 6 indicates the Raman shift, and the vertical axis indicates the scattering intensity. The solid line indicates the Raman spectrum of the laminate 220 formed according to the time chart of Fig. 5(c), the dashed line indicates the Raman spectrum of the laminate 220 formed according to the time chart of Fig. 5(b), and the dashed line indicates the Raman spectrum of the laminate 220 formed according to the time chart of Fig. 5(a).

[0044] An example of a recipe for forming the measured laminated body 220 is shown below. Gap between the stage and the gas supply: 60 mm CH 4 Gas supply: 200sccm Pressure inside the processing vessel: 20 mTorr High frequency power (VHF): 220MHz, 1000W Low frequency power (LF): 13.5MHz, 1000W Mounting table temperature: 100℃

[0045] As shown in Fig. 6, the spectrum of the laminate 220 in Fig. 5(a) shown by the dashed line shows no DLC peak. On the other hand, the spectrum of the laminate 220 in Fig. 5(b) shown by the dashed line shows a peak at 1540 cm -1 ~1543cm -1 In addition, in the spectrum of the laminate 220 shown in FIG. 5(c) by the solid line, a weak DLC peak was observed at 1540 cm -1 ~1543cm -1 A strong DLC ​​peak was observed at this position.

[0046] In this way, by controlling the application time of high frequency power and low frequency power (VHF+LF) relative to the total film formation time, it is possible to adjust the proportion of DLC in the laminate 220. That is, by increasing the proportion of the application time of high frequency power and low frequency power (VHF+LF), it is possible to increase the proportion of DLC in the laminate 220.

[0047] Next, the compressive stress in the laminate 220 formed in accordance with the time charts shown in Figures 5(a) to 5(c) and the dry etching resistance of the laminate 220 will be further described with reference to Figure 7. Figure 7 is a graph showing an example of the stress and etching resistance of the laminate 220.

[0048] The first vertical axis on the left side indicates stress. The direction of compressive stress is negative. The results of stress in the laminate 220 formed in accordance with the time charts shown in Figures 5(a) to 5(c) are indicated by white circles, and curves passing through each point are indicated by solid lines.

[0049] The second vertical axis on the right side indicates the etching rate (DER) for dry etching. The results of the dry etching rate for the laminate 220 formed according to the time charts shown in Figures 5(a) to 5(c) are indicated by black squares, and the curves passing through the points are indicated by dashed lines.

[0050] The horizontal axis indicates the ratio of the application time of high frequency power and low frequency power (VHF+LF) to the total film formation time. The laminate 220 formed according to the time chart shown in Fig. 5(c) corresponds to the 13% point on the horizontal axis, the laminate 220 formed according to the time chart shown in Fig. 5(b) corresponds to the 40% point on the horizontal axis, and the laminate 220 formed according to the time chart shown in Fig. 5(a) corresponds to the 100% point on the horizontal axis.

[0051] 7, the compressive stress of the laminate 220 can be adjusted by controlling the application time of high frequency power and low frequency power (VHF+LF) relative to the total film formation time. That is, the greater the ratio of the application time of high frequency power and low frequency power (VHF+LF) relative to the total film formation time, the more DLC is formed in the laminate 220 and the greater the compressive stress. Also, the greater the ratio of the application time of high frequency power (VHF) relative to the total film formation time, the more PLC is formed in the laminate 220 and the smaller the compressive stress.

[0052] Furthermore, the greater the ratio of the application time of high frequency power and low frequency power (VHF+LF) to the total film formation time, the more DLC is formed in the laminate 220 and the dry etching rate decreases; in other words, the dry etching resistance of the laminate 220 improves.

[0053] As described above, the laminate 220 formed by the substrate processing apparatus 1 according to this embodiment can reduce compressive stress more than the DLC film (see FIG. 5(d)) while improving dry etching resistance more than conventionally. In addition, by controlling the bias power (low frequency power (LF)), the ratio of the DLC film to the PLC film can be controlled, and the strength of the compressive stress of the laminate 220 to be formed can be controlled.

[0054] For example, by setting the ratio of the application time of the high frequency power (VHF) to the total film formation time to 13% to 80%, it is possible to achieve both the dry etching resistance of the laminate 220 and the relaxation of the compressive stress of the laminate 220.

[0055] It should be noted that the time chart when forming the laminate 220 is not limited to Fig. 5. Fig. 8 shows another example of a time chart when forming the laminate 220.

[0056] In the example shown in FIG. 8(a), the ratio of the application time of the high frequency power (VHF) to the total film formation time is set to 50%, and the high frequency power (VHF) is applied, followed by the application of the high frequency power and the low frequency power (VHF+LF). In the example shown in FIG. 8(b), the ratio of the application time of the high frequency power (VHF) to the total film formation time is set to 50%, and the high frequency power and the low frequency power (VHF+LF) are applied, followed by the application of the high frequency power (VHF). In the example shown in FIG. 8(c), the ratio of the application time of the high frequency power (VHF) to the total film formation time is set to 30%, and the high frequency power (VHF) is applied, followed by the application of the high frequency power and the low frequency power (VHF+LF). In the example shown in FIG. 8(d), the ratio of the application time of the high frequency power (VHF) to the total film formation time is set to 30%, and the high frequency power and the low frequency power (VHF+LF) are applied, followed by the application of the high frequency power (VHF).

[0057] The above describes the substrate processing method using the substrate processing apparatus 1. However, the present disclosure is not limited to the above-described embodiments, and various modifications and improvements are possible within the scope of the gist of the present disclosure as described in the claims.

[0058] 5, the cycle for switching the applied voltage is constant, but this is not limiting. The ratio of the application time of the high frequency power (VHF) may be changed during the film formation process of the laminate 220. This allows, for example, the lower layer side of the laminate 220 to be a film with less DLC, and the upper layer side to be a film with more DLC. This improves the dry etching resistance of the upper layer side of the laminate 220 exposed to the etching gas during dry etching, and also relieves the compressive stress of the entire laminate 220.

[0059] In the present embodiment, the stress intensity of the carbon-based film to be deposited is controlled by controlling the bias power (low frequency power (LF)). However, the present invention is not limited to this.

[0060] For example, when the first film 221 and the second film 222 are formed, the lift mechanism 46 may be controlled to change the gap between the mounting table 3 and the gas supply unit 5. By changing the gap between the mounting table 3 and the gas supply unit 5, the sp 3 Bonds and sp 2 This allows the DLC film and the PLC film to be laminated alternately by raising and lowering the mounting table 3. [Explanation of symbols]

[0061] W substrate 1. Substrate Processing Equipment 2. Treatment vessel 3. Placement table 5 Gas supply section (upper electrode) 6 Gas supply line 9. Control Unit 33 Lower electrode 35 RF power supply 51 RF power supply 200 Si substrate 210 Target membrane 220 Stacked body (hard mask) 221 1st membrane 222 Second membrane

Claims

1. A substrate processing method for forming a carbon-based film on a substrate, comprising the steps of: placing the substrate on a mounting table; a first film formation step of forming a first carbon-based film having a first stress; a second film formation step of forming a second carbon-based film having a second stress; a third film formation step of repeating the first film formation step and the second film formation step to form a stack of the first carbon-based film and the second carbon-based film, the first carbon-based film is a polymer-like carbon (PLC) film, The second carbon-based film is a diamond-like carbon (DLC) film. A method for processing a substrate.

2. The strength of the stress of the laminate is controlled by the ratio of the first carbon-based film to the second carbon-based film. The method for processing a substrate according to claim 1 .

3. a ratio of the first carbon-based film to the second carbon-based film is controlled by applying a bias power to a lower electrode of the mounting table; The substrate processing method according to claim 2 .

4. In the first film forming step of forming the first carbon-based film, the bias power is not applied, The bias power is applied in the second film forming step of forming the second carbon-based film. The substrate processing method according to claim 3 .

5. The ratio of the first carbon-based film to the second carbon-based film is 13% to 40%. The substrate processing method according to claim 2 .

6. the film in contact with the substrate is the first carbon-based film; The substrate processing method according to claim 1 .

7. the film in contact with the substrate is the second carbon-based film, the thickness of the second carbon-based film in contact with the substrate is thinner than the thickness of the other second carbon-based films of the laminate; The substrate processing method according to claim 1 .

8. The third film forming step alternately repeats the first film forming step and the second film forming step. The substrate processing method according to claim 1 .

9. The carbon-based film is a carbon film. The substrate processing method according to claim 1 .

10. The laminate is a hard mask. The substrate processing method according to claim 1 .

11. A processing vessel; a mounting table disposed in the processing chamber and configured to mount a substrate thereon; a gas supply unit for supplying a deposition gas into the processing chamber; A control unit, The control unit is a first film formation process of supplying the film formation gas from the gas supply unit into the processing vessel to form a first carbon-based film having a first stress; a second film formation process of supplying the film formation gas from the gas supply unit into the processing vessel to form a second carbon-based film having a second stress; a third film formation step of repeating the first film formation step and the second film formation step to form a stack of the first carbon-based film and the second carbon-based film; the first carbon-based film is a polymer-like carbon (PLC) film, The second carbon-based film is a diamond-like carbon (DLC) film. Substrate processing equipment.

Images