Surface emitting laser device

Abstract

To provide a surface emitting laser device improved in heat dissipation.SOLUTION: A surface emitting laser device 10 comprises: na Si substrate 40 that includes a first substrate surface 40a; a lamination body 20 that includes a light generation layer 23, and a first light reflection layer 21 and a second light reflection layer 22 that are arranged so as to hold the light generation layer 23; and a bonding layer 50 that bonds the Si substrate 40 and the lamination body 20. The lamination body 20 includes a light emission part that is concaved toward a second lamination surface 20b from a first lamination surface 20a, and is surrounded by a separation groove 28 formed in an annular shape in a plan view. A light emission part 31 includes: a light emission part front surface 31a; and a light emission part side surface 31b constructing the separation groove 28. The bonding layer 50 is in contact with the light emission part front surface 31a and the light emission part side surface 31b.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to a surface emitting laser device. [Background technology]

[0002] Patent Document 1 discloses a surface-emitting laser device. This surface-emitting laser device includes a substrate made of a compound semiconductor material, and an n-type semiconductor layer, an active layer, and a p-type semiconductor layer stacked on the substrate. The n-type semiconductor layer includes an n-type light reflecting layer, and the p-type semiconductor layer includes a p-type light reflecting layer. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2020-21879 A

[0004] [overview] In a surface-emitting laser device, heat generated in the active layer can affect the laser characteristics, and therefore, improvement in heat dissipation is sometimes required in the surface-emitting laser device.

[0005] A surface-emitting laser device according to one embodiment of the present disclosure includes a Si substrate including a first substrate surface, a stack including a light-generating layer, a first reflective layer of a first conductivity type and a second reflective layer of a second conductivity type arranged to sandwich the light-generating layer, and a bonding layer bonding the Si substrate and the stack, wherein the stack includes a light-emitting portion recessed from a first stacking surface facing the first substrate surface toward a second stacking surface facing the opposite side to the first stacking surface and surrounded by a separation groove formed in a ring shape in a plan view viewed perpendicular to the first stacking surface, the light-emitting portion including a light-emitting portion surface facing the first substrate surface and a light-emitting portion side surface constituting the separation groove, and the bonding layer is in contact with the light-emitting portion surface and the light-emitting portion side surface. [Brief description of the drawings]

[0006] [Figure 1]FIG. 1 is a schematic plan view of a surface emitting laser device according to one embodiment. [Diagram 2] FIG. 2 is a cross-sectional view of the surface emitting laser device taken along line 2-2 of FIG. [Diagram 3] FIG. 3 is a schematic cross-sectional view showing an enlarged portion of the surface-emitting laser device of FIG. [Figure 4] FIG. 4 is a cross-sectional view of the surface emitting laser device taken along line 4-4 of FIG. [Diagram 5] FIG. 5 is a schematic plan view showing a light emitting device equipped with the surface emitting laser device of FIG. [Figure 6] FIG. 6 is a schematic cross-sectional view of the light emitting device of FIG. [Figure 7] FIG. 7 is a schematic cross-sectional view showing an enlarged portion of the light emitting device of FIG. [Figure 8] 8A to 8C are schematic cross-sectional views showing an example of a manufacturing process for the surface emitting laser device of FIG. [Figure 9] FIG. 9 is a schematic cross-sectional view showing a manufacturing process subsequent to FIG. [Figure 10] FIG. 10 is a schematic cross-sectional view showing a manufacturing process subsequent to FIG. [Figure 11] FIG. 11 is a schematic cross-sectional view showing a manufacturing process subsequent to FIG. [Figure 12] FIG. 12 is a schematic cross-sectional view showing a manufacturing process subsequent to FIG. [Figure 13] FIG. 13 is a schematic cross-sectional view showing a manufacturing process subsequent to FIG. [Figure 14] FIG. 14 is a schematic cross-sectional view showing a manufacturing process subsequent to FIG. [Figure 15] FIG. 15 is a schematic cross-sectional view showing a manufacturing process subsequent to FIG. [Figure 16] FIG. 16 is a schematic cross-sectional view showing a manufacturing process subsequent to FIG. [Figure 17] FIG. 17 is a schematic cross-sectional view showing a manufacturing process subsequent to FIG. [Figure 18] FIG. 18 is a schematic cross-sectional view showing a manufacturing process subsequent to FIG. [Figure 19]FIG. 19 is a schematic cross-sectional view showing the Si substrate of FIG. [Figure 20] FIG. 20 is a schematic cross-sectional view showing a manufacturing process subsequent to FIG. [Figure 21] FIG. 21 is a schematic cross-sectional view showing a manufacturing process subsequent to FIG. [Figure 22] FIG. 22 is a schematic cross-sectional view showing a manufacturing process subsequent to FIG. [Figure 23] FIG. 23 is a schematic cross-sectional view showing a manufacturing process subsequent to FIG. [Figure 24] FIG. 24 is a schematic cross-sectional view showing a manufacturing process subsequent to FIG. [Diagram 25] FIG. 25 is a schematic cross-sectional view showing a manufacturing process subsequent to FIG. [Figure 26] FIG. 26 is a schematic cross-sectional view of a surface-emitting laser device of a comparative example. [Figure 27] FIG. 27 is a schematic cross-sectional view of a surface-emitting laser device according to a modified example. [Figure 28] 28A to 28C are schematic cross-sectional views showing an example of a manufacturing process for the surface-emitting laser device of FIG. [Figure 29] FIG. 29 is a schematic cross-sectional view showing a manufacturing process following FIG. [Diagram 30] FIG. 30 is a schematic cross-sectional view showing a manufacturing process following FIG. [Diagram 31] FIG. 31 is a schematic plan view of a surface emitting laser device according to a modified example. [Diagram 32] FIG. 32 is a schematic plan view of a surface emitting laser device according to a modified example.

[0007] [Detailed Description] Hereinafter, some embodiments of the surface-emitting laser device of the present disclosure will be described with reference to the accompanying drawings. Note that for simplicity and clarity of description, components shown in the drawings are not necessarily drawn to scale. Also, hatching lines may be omitted in cross-sectional views to facilitate understanding. The accompanying drawings are merely illustrative of embodiments of the present disclosure and should not be considered as limiting the present disclosure. Terms such as "first", "second", and "third" in the present disclosure are used merely to distinguish objects and do not rank the objects.

[0008] The following detailed description includes devices, systems, and methods embodying exemplary embodiments of the present disclosure. This detailed description is merely illustrative in nature and is not intended to limit the embodiments of the present disclosure or the application and uses of such embodiments.

[0009] (Schematic configuration of a surface emitting laser device) Fig. 1 is a schematic plan view of a surface-emitting laser device 10 according to an embodiment. Fig. 2 is a cross-sectional view of the surface-emitting laser device taken along line 2-2 in Fig. 1. Fig. 3 is a schematic cross-sectional view showing an enlarged portion of Fig. 2. Fig. 4 is a cross-sectional view of the surface-emitting laser device 10 taken along line 4-4 in Fig. 2. Fig. 4 is a plan view of the laminate 20 of the surface-emitting laser device 10 as viewed from the Si substrate 40 side, showing the laminate 20 including a plurality of light-emitting sections 31.

[0010] 1 is a semiconductor laser device called a VCSEL (Vertical Cavity Surface Emitting Laser). The surface emitting laser device 10 has a roughly rectangular parallelepiped shape. In one example, the surface emitting laser device 10 has a rectangular plate shape.

[0011] The surface-emitting laser device 10 includes an upper surface 11 and a lower surface 12 of the device that face opposite each other in the thickness direction. In this disclosure, the thickness direction of the surface-emitting laser device 10 is defined as the Z-axis direction. Two axial directions that are perpendicular to the Z-axis direction and perpendicular to each other are defined as the X-axis direction and the Y-axis direction. The term "planar view" used in this disclosure refers to viewing an object from the Z-axis direction.

[0012] 2, the surface-emitting laser device 10 includes a laminate 20, a Si substrate 40, and a bonding layer 50. The bonding layer 50 bonds the Si substrate 40 and the laminate 20. The surface-emitting laser device 10 of the present disclosure includes the Si substrate 40, the bonding layer 50, and the laminate 20, which are arranged in the Z-axis direction.

[0013] (Laminate) As shown in FIG. 1 and FIG. 2, the laminate 20 is a generally rectangular flat plate. The laminate 20 includes a first laminate surface 20a, a second laminate surface 20b, and a plurality of laminate side surfaces 20c. The first laminate surface 20a and the second laminate surface 20b face opposite each other in the Z-axis direction. In the present disclosure, the Z-axis direction is a direction perpendicular to the first laminate surface 20a. A plan view refers to viewing an object from a direction perpendicular to the first laminate surface 20a. The first laminate surface 20a faces the first substrate surface 40a of the Si substrate 40. The second laminate surface 20b faces the same direction as the first substrate surface 40a of the Si substrate 40. The plurality of laminate side surfaces 20c face a direction intersecting the first laminate surface 20a and the second laminate surface 20b. They face either the X-axis direction or the Y-axis direction. The plurality of laminate side surfaces 20c face either the X-axis direction or the Y-axis direction.

[0014] As shown in FIGS. 2 and 3, laminate 20 includes a light generating layer 23 , a first light reflective layer 21 , and a second light reflective layer 22 . First light reflecting layer 21 and second light reflecting layer 22 are arranged in the Z-axis direction to sandwich light generating layer 23. In one example, first light reflecting layer 21 is arranged on the Si substrate 40 side with respect to light generating layer 23. Second light reflecting layer 22 is arranged on the opposite side of light generating layer 23 to Si substrate 40.

[0015] (Photogenerating Layer) As shown in FIG. 3, the light generating layer 23 includes an active layer 24. The active layer 24 is disposed between the first light reflecting layer 21 and the second light reflecting layer 22 in the Z-axis direction. The active layer 24 is a light emitting layer that emits light when a current is supplied thereto. In one example, the active layer 24 may have a QW (Quantum Well) structure including a quantum well layer and a barrier layer. The active layer 24 may have an MQW (Multi Quantum Well) structure in which quantum well layers and barrier layers are alternately stacked at any period. The quantum well layer may include GaAs (Gallium Arsenide), AlGaAs (Aluminum Gallium Arsenide), or InGaAs (Indium Gallium Arsenide). The quantum well layer may be free of impurities. The barrier layer may have a band gap larger than the band gap of the quantum well layer.

[0016] As shown in FIG. 3, light generating layer 23 may include cladding layers 25 and 26. The cladding layers 25 and 26 are arranged to sandwich the active layer 24. In one example, the cladding layer 25 is arranged on the first light reflecting layer 21 side with respect to the active layer 24. In one example, the cladding layer 25 is a first cladding layer containing a first conductive type impurity. The first conductive type is, for example, p-type. The first conductive type impurity may be, for example, at least one of C (carbon), Zn (zinc), and Mg (magnesium). In one example, the cladding layer 26 is arranged on the second light reflecting layer 22 side with respect to the active layer 24. In one example, the cladding layer 26 is a second cladding layer containing a second conductive type impurity. The second conductive type is, for example, n-type. The second conductive type impurity may be, for example, at least one of Si (silicon) and Te (tellurium). The first cladding layer 25 and the second cladding layer 26 may contain Al. In one example, the first cladding layer 25 and the second cladding layer 26 contain AlGaAs.

[0017] (First light reflecting layer and second light reflecting layer) As shown in FIG. 2, the first light reflecting layer 21 and the second light reflecting layer 22 are semiconductor layers of different conductivity types. In one example, the first light reflecting layer 21 is a semiconductor layer containing a first conductivity type impurity. The second light reflecting layer 22 is a semiconductor layer containing a second conductivity type impurity different from the first conductivity type. The first conductivity type is, for example, a p type, and the second conductivity type is, for example, an n type. The first conductivity type impurity may be, for example, at least one of C, Zn, and Mg. The second conductivity type impurity may be, for example, at least one of Si and Te.

[0018] The first light reflecting layer 21 is composed of a first conductivity type DBR layer (Distributed Bragg Reflector). The first conductivity type is, for example, n-type. The first light reflecting layer 21 contains impurities of the first conductivity type. The impurities of the first conductivity type may be, for example, Si. The first light reflecting layer 21 has a refractive index that changes periodically along the thickness direction Z, and resonantly reflects a specific wavelength component. It can be said that the first light reflecting layer 21 has a reflectance that reflects a specific wavelength component.

[0019] The second light reflecting layer 22 is composed of a DBR layer of a second conductivity type. The second conductivity type is, for example, p-type. The second light reflecting layer 22 contains impurities of the second conductivity type. The impurities of the second conductivity type may be, for example, C. The second light reflecting layer 22 has a refractive index that changes periodically along the thickness direction Z, and resonantly reflects a specific wavelength component. It can be said that the second light reflecting layer 22 has a reflectance that reflects a specific wavelength component.

[0020] The reflectance of the first light reflecting layer 21 and the reflectance of the second light reflecting layer 22 may be different from each other. In one example, the reflectance of the first light reflecting layer 21 is higher than the reflectance of the second light reflecting layer 22. The reflectance of the first light reflecting layer 21 and the reflectance of the second light reflecting layer 22 may be the same.

[0021] As shown in FIG. 3, the first light reflecting layer 21 includes first reflecting layers 21a and second reflecting layers 21b arranged alternately in the Z-axis direction. The first reflecting layers 21a and the second reflecting layers 21b include Al. It can be said that the first light reflecting layer 21 includes a plurality of first reflecting layers 21a and a plurality of second reflecting layers 21b including Al. The first reflecting layer 21a and the second reflecting layer 21b have mutually different refractive indices. In one example, the first reflecting layer 21a and the second reflecting layer 21b include AlGaAs. The first reflecting layer 21a and the second reflecting layer 21b may have mutually different Al composition ratios.

[0022] The second light reflecting layer 22 includes third reflecting layers 22a and fourth reflecting layers 22b arranged alternately in the Z-axis direction. The third reflecting layers 22a and the fourth reflecting layers 22b include Al. It can be said that the second light reflecting layer 22 includes a plurality of third reflecting layers 22a and a plurality of fourth reflecting layers 22b including Al. The third reflecting layers 22a and the fourth reflecting layers 22b have mutually different refractive indices. In one example, the third reflecting layer 22a and the fourth reflecting layer 22b include AlGaAs. The third reflecting layer 22a and the fourth reflecting layer 22b may have mutually different Al composition ratios.

[0023] The number of layers of the first reflective layer 21a and the second reflective layer 21b included in the first light reflecting layer 21 may be the same as the number of layers of the third reflective layer 22a and the fourth reflective layer 22b included in the second light reflecting layer 22. The number of layers of the first reflective layer 21a and the second reflective layer 21b included in the first light reflecting layer 21 may be different from the number of layers of the third reflective layer 22a and the fourth reflective layer 22b included in the second light reflecting layer 22. In one example, the number of layers of the first reflective layer 21a and the second reflective layer 21b included in the first light reflecting layer 21 may be greater than the number of layers of the third reflective layer 22a and the fourth reflective layer 22b included in the second light reflecting layer 22.

[0024] (Isolation groove and light-emitting part) As shown in FIG. 2 to FIG. 4, stack 20 includes separation groove 28. The number of separation grooves 28 may be one or more than one. In one example, stack 20 includes a plurality of separation grooves 28. As shown in FIG. 2 and FIG. 3, separation groove 28 is formed so as to be recessed from first stacking surface 20a of stack 20 toward second stacking surface 20b of stack 20. In one example, separation groove 28 penetrates first stacking surface 20a through first light reflecting layer 21 and light generating layer 23 to reach second light reflecting layer 22. As shown in FIG. 4, separation groove 28 is annular in plan view. In one example, separation groove 28 is annular. The shape of separation groove 28 in plan view may be any shape, such as a polygonal shape, an elliptical shape, or the like.

[0025] Separation groove 28 includes inner circumferential surface 28a, outer circumferential surface 28b, and bottom surface 28c connecting inner circumferential surface 28a and outer circumferential surface 28b. First light reflecting layer 21 and light generating layer 23 are exposed at inner circumferential surface 28a and outer circumferential surface 28b of separation groove 28. A portion of second light reflecting layer 22 is exposed at inner circumferential surface 28a and outer circumferential surface 28b of separation groove 28. Second light reflecting layer 22 is exposed at bottom surface 28c of separation groove 28.

[0026] 2 to 4, the laminate 20 includes a light emitting section 31 surrounded by a separation groove 28. The light emitting section 31 may be partitioned into a plateau shape (mesa shape) by the separation groove 28. The light emitting section 31 may have any shape, such as a cylindrical shape. As shown in FIG. 4, the laminate 20 may include a plurality of light emitting sections 31.

[0027] As shown in FIG. 2 and FIG. 3, the light emitting section 31 includes a light emitting section surface 31a constituting a part of the first stacking surface 20a. The first stacking surface 20a faces the first substrate surface 40a of the Si substrate 40. Thus, the light emitting section surface 31a faces the first substrate surface 40a of the Si substrate 40. The light emitting section 31 also includes a light emitting section side surface 31b constituting the separation groove 28. The light emitting section side surface 31b is constituted by an inner peripheral surface 28a of the separation groove 28. The separation groove 28 extends from the first stacking surface 20a to the middle of the second light reflecting layer 22 in the stack 20. Thus, the light emitting section side surface 31b is constituted by the side surfaces of the first light reflecting layer 21 and the light generating layer 23, and a part of the side surface of the second light reflecting layer 22.

[0028] (Current confinement layer) 2, the light emitting section 31 may include a current confinement layer 32. The current confinement layer 32 is disposed between the first stacking surface 20a and the second light reflecting layer 22. The current confinement layer 32 may be disposed between the light emitting section surface 31a and the light generating layer 23. In one example, the current confinement layer 32 is disposed in the first light reflecting layer 21. The current confinement layer 32 may be configured to constrict the current path of the light emitting section 31 in the Z-axis direction.

[0029] The current confinement layer 32 includes a current passing portion 32a and an insulating portion 32b. The current passing portion 32a is made of a material containing Al. In one example, the current passing portion 32a is made of AlAs (Al x Ga (1-x) The material is composed of a material containing As and Al (x is 0.95 or more and 1.00 or less).

[0030] The current passing portion 32a is disposed in an inner region of the light emitting portion 31. In one example, the current passing portion 32a is disposed in the center of the light emitting portion 31 in a planar view. In one example, the current passing portion 32a may be circular in a planar view.

[0031] The insulating portion 32b is formed so as to surround the current passing portion 32a. The insulating portion 32b may be composed of an oxide layer. In one example, the insulating portion 32b includes an oxide layer containing Al. The oxide layer containing Al is, for example, Al2O3 (alumina). The oxide layer may contain Ga or As. The insulating portion 32b is disposed on the side of the light emitting portion side surface 31b of each light emitting portion 31 with respect to the current passing portion 32a. For example, the insulating portion 32b is formed by oxidizing the periphery of a layer containing AlAs. In one example, the insulating portion 32b can be formed by performing a heat treatment in water vapor.

[0032] (insulating film) 2, the stack 20 may include an insulating film 33 covering the first stacking surface 20a. The insulating film 33 may include, for example, silicon oxide such as SiO2 or SiO, SiN (silicon nitride), SiON, ZrO2 (zirconium oxide), or TiO (titanium oxide). In one example, the insulating film 33 is a SiN film.

[0033] The laminate 20 includes a separation groove 28 and a light-emitting portion 31 surrounded by the separation groove 28. The insulating film 33 covers the light-emitting portion surface 31a and the light-emitting portion side surface 31b of the light-emitting portion 31. The insulating film 33 also covers the outer circumferential surface 28b and the bottom surface 28c of the separation groove 28. The insulating film 33 includes an opening 33a that exposes a part of the light-emitting portion surface 31a of the light-emitting portion 31. The opening 33a of the insulating film 33 is formed so as to overlap with the current passing portion 32a in a planar view. It can be said that the insulating film 33 is formed so as to surround the current passing portion 32a in a planar view with the opening 33a.

[0034] (reflective film) The laminate 20 may include a reflective film 34. The reflective film 34 may be provided on the light-emitting surface 31a. The reflective film 34 may be formed of a material containing at least one of Ag and Au. That is, the reflective film 34 has electrical conductivity. It can be said that the reflective film 34 is electrically connected to the first light reflecting layer 21 of the light-emitting portion 31. The surface roughness of the reflective film 34 may be smaller than the surface roughness of the bonding layer 50. The reflective film 34 is disposed so as to overlap the insulating portion 32b of the current confinement layer 32 in a plan view. The reflective film 34 is disposed in the opening 33a of the insulating film 33. The reflective film 34 is separated from the insulating film 33.

[0035] (Si substrate) 1 and 2, the Si substrate 40 has a rectangular plate shape. The Si substrate 40 includes a first substrate surface 40a and a second substrate surface 40b that face in opposite directions in the Z-axis direction. The bonding layer 50 contacts the first substrate surface 40a and the first stacking surface 20a.

[0036] The Si substrate 40 includes a main body 41 and a conductive layer 43. The conductive layer 43 of the Si substrate 40 is an example of a "third conductive layer". In one example, the main body 41 has insulating properties. The main body 41 is a substrate made of a material containing Si. The main body 41 can also be said to be a substrate containing Si as a main component. In one example, the main body 41 may be a substrate made of Si. Also, the main body 41 may be a substrate made of SiC. The main body 41 may contain impurities. The impurities may be the same as the impurities contained in the first light reflecting layer 21.

[0037] The main body portion 41 includes a first main body surface 41a and a second main body surface 41b that face in opposite directions in the Z-axis direction. The first main body surface 41a faces the same direction as the first substrate surface 40a. The second main body surface 41b constitutes the second substrate surface 40b. The thickness of the main body portion 41 may be, for example, 60 μm or more and 150 μm or less.

[0038] The main body portion 41 includes a main body side surface 41c that faces a direction intersecting the first main body surface 41a and the second main body surface 41b. In one example, the main body side surface 41c may include a first side surface 41ca on the side of the first main body surface 41a and a second side surface 41cb on the side of the second main body surface 41b. The first side surface 41ca and the second side surface 41cb may be on the same plane or may be on different planes. When the first side surface 41ca and the second side surface 41cb are on different planes, the main body portion 41 may include a step formed by the first side surface 41ca and the second side surface 41cb.

[0039] The main body 41 includes a through hole 41d penetrating the main body 41 from the first main body surface 41a to the second main body surface 41b in the Z-axis direction. The main body 41 includes a plurality of through holes 41d. Through wires 42 are arranged in the through holes 41d. The through wires 42 are made of a material containing one or more appropriately selected from Ti, TiN, Au, Ag, Cu, Al, and W.

[0040] In one example, the conductive layer 43 may have the same size as the main body 41 when viewed from the Z-axis direction. The conductive layer 43 may be made of a material containing at least one of Ti and Au. The first conductive layer 51 may be made of a Ti layer and an Au layer. The conductive layer 43 is electrically connected to the through wiring 42 of the main body 41.

[0041] (Joining layer) The bonding layer 50 includes a first conductive layer 51 and a second conductive layer 52. The first conductive layer 51 is made of a material containing at least one of Ti and Au. The first conductive layer 51 may be made of a Ti layer and an Au layer.

[0042] The first conductive layer 51 covers the surface of the insulating film 33 of the laminate 20. In one example, the first conductive layer 51 is formed so as to expose the peripheral portion of the insulating film 33 in a plan view. The insulating film 33 of the laminate 20 covers the light emitting portion surface 31a and the light emitting portion side surface 31b of the light emitting portion 31. Therefore, it can be said that the first conductive layer 51 is in contact with the light emitting portion surface 31a and the light emitting portion side surface 31b of the light emitting portion 31 via the insulating film 33. It can be said that the first conductive layer 51 is in indirect contact with the light emitting portion surface 31a and the light emitting portion side surface 31b of the light emitting portion 31.

[0043] The first conductive layer 51 contacts the light emitting surface 31a of the light emitting section 31 in the opening 33a of the insulating film 33. The first conductive layer 51 is electrically connected to the first light reflecting layer 21 of the light emitting section 31. More specifically, a reflective film 34 is disposed in the opening 33a of the insulating film 33. The reflective film 34 is separated from the insulating film 33. Therefore, the insulating film 33 and the reflective film 34 form an annular gap. The first conductive layer 51 is electrically connected to the first light reflecting layer 21 through the annular gap. The light emitting section 31 may include a contact layer interposed between the first light reflecting layer 21 and the first conductive layer 51.

[0044] The second conductive layer 52 is formed so as to cover the surface of the first conductive layer 51. The surface of the first conductive layer 51 indicates the surface opposite to the surface of the laminate 20 that contacts the insulating film 33. The second conductive layer 52 is thicker than the first conductive layer 51. The second conductive layer 52 may be formed of a material containing Au. The second conductive layer 52 may be formed by a plating method.

[0045] (1st electrode, 2nd electrode) The surface-emitting laser device 10 may include a first electrode 61 and a second electrode 62 . As shown in FIG. 2, the first electrode 61 is provided on the second substrate surface 40b of the Si substrate 40. The first electrode 61 is in contact with the second substrate surface 40b of the Si substrate 40. The first electrode 61 may be formed of a material containing Ti and Au. The first electrode 61 may include a Ti layer and an Au layer. In one example, the first electrode 61 is formed so as to cover the center of the second substrate surface 40b of the Si substrate 40 in a plan view and to expose the peripheral portion of the second substrate surface 40b. It can be said that the second electrode 62 is formed so as to cover the center of the second main body surface 41b of the main body portion 41 in a plan view and to expose the peripheral portion of the second main body surface 41b. The first electrode 61 is electrically connected to the through wiring 42 provided in the main body portion 41 of the Si substrate 40. Therefore, the first electrode 61 is electrically connected to the first light reflecting layer 21 of the laminate 20 through the through wiring 42, the conductive layer 43, and the bonding layer 50.

[0046] The second electrode 62 is provided on the second stacking surface 20b of the laminate 20. The second electrode 62 is in contact with the second stacking surface 20b of the laminate 20. The second electrode 62 may be made of a material containing one or more appropriately selected from Au, Ge, and Ni. The second electrode 62 may include an AuGe layer, a Ni layer, and an Au layer. In one example, the second electrode 62 is formed to have the same size as the second stacking surface 20b, that is, the same size as the second light reflecting layer 22, in a plan view. The second electrode 62 is electrically connected to the second light reflecting layer 22.

[0047] The second electrode 62 includes an opening 62a. As shown in Fig. 1, the second electrode 62 includes a plurality of openings 62a. As shown in Fig. 2, the openings 62a are provided corresponding to the light emitting portions 31. The openings 62a are disposed at positions overlapping the current passing portions 32a in a plan view. In one example, the openings 62a are formed in a circular shape in a plan view. The shape of the openings 62a may be any shape, such as a polygonal shape, an elliptical shape, or the like.

[0048] (Schematic configuration of the light emitting device) Fig. 5 is a schematic plan view showing an example of a light emitting device 100 equipped with the surface emitting laser device 10 of Fig. 1. Fig. 6 is a schematic cross-sectional view of the light emitting device 100 of Fig. 5. Fig. 7 is a schematic cross-sectional view showing an enlarged portion of the light emitting device 100 of Fig. 6. Figs. 6 and 7 show a cross-sectional configuration of the light emitting device 100 corresponding to the cross section of the surface emitting laser device 10 shown in Fig. 2.

[0049] As shown in FIG. 5 to FIG. 7, the light emitting device 100 includes a surface emitting laser device 10, a support 110, and a sealing resin 150. The support 110 includes a substrate 120 and a conductive portion 130 .

[0050] The base material 120 is made of an insulating material, such as epoxy resin, silicone resin, or the like. The base material 120 includes a lower surface 121, a side surface 122, and an upper surface 123. The lower surface 121 and the upper surface 123 face in opposite directions in the Z-axis direction. The side surface 122 faces a direction intersecting the lower surface 121 and the upper surface 123. The base material 120 includes an accommodating recess 124. The accommodating recess 124 is a recess extending from the upper surface 123 toward the lower surface 121. The base material 120 includes a bottom surface 125 and an inner surface 126 that constitute the accommodating recess 124. The bottom surface 125 faces in the same direction as the upper surface 123. The inner surface 126 faces a direction intersecting the upper surface 123 and the bottom surface 125. The bottom surface 125 and the inner surface 126 define the accommodating recess 124. The inner surface 126 is inclined so that the opening width gradually increases from the bottom surface 125 toward the upper surface 123.

[0051] The conductive section 130 constitutes a conductive path between the surface-emitting laser device 10 and the outside of the light-emitting device 100. In one example, the conductive section 130 includes a first lead 131 and a second lead 132. The first lead 131 and the second lead 132 are made of a metal such as Cu, Fe, or Ni.

[0052] The first lead 131 includes a first surface 131a and a second surface 131b. The second lead 132 includes a third surface 132a and a fourth surface 132b. The first surface 131a of the first lead 131 and the third surface 132a of the second lead 132 are exposed to the bottom surface 125 of the base material 120. The second surface 131b of the first lead 131 and the fourth surface 132b of the second lead 132 are exposed to the lower surface 121 of the base material 120.

[0053] The surface-emitting laser device 10 is accommodated in the accommodation recess 124 of the base material 120, and is electrically connected to the first lead 131 and the second lead. The surface-emitting laser device 10 is mounted on a first surface 131a of the first lead 131. As shown in FIG. 7, the first electrode 61 of the surface-emitting laser device 10 is die-bonded to the first surface 131a of the first lead 131 by a conductive bonding material 141. The conductive bonding material 141 is, for example, a paste containing a metal such as Ag, solder, or the like.

[0054] 5 and 6, the second electrode 62 of the surface-emitting laser device 10 is electrically connected to the second lead 132 by a wire 142. In Fig. 1, an example of the position of the wire 142 connected to the second electrode 62 is shown by a two-dot chain line. In one example, the wire 142 is an Au wire. Although one wire 142 is shown in Fig. 5, multiple wires 142 may be used.

[0055] The sealing resin 150 seals the surface-emitting laser device 10 and the wires 142. The sealing resin 150 is made of a light-transmitting insulator or a transparent insulator. The sealing resin 150 may be made of a material including at least one of a silicone resin, an epoxy resin, and an acrylic resin, for example.

[0056] The configuration of the light emitting device 100 may be appropriately changed. For example, a mounting substrate may be used instead of the first lead 131 and the second lead 132. Also, a cover member may be provided on the upper surface 123 of the base material 120 to cover the accommodating recess 124 and transmit light from the surface emitting laser device 10.

[0057] (Operation of the embodiment) Next, the operation of the surface emitting laser device 10 will be described. (Comparative Example) First, a surface-emitting laser device 200 of the comparative example will be described. Note that the same members as those in the surface-emitting laser device 10 of the above embodiment will be described using the same reference numerals.

[0058] FIG. 26 is a schematic cross-sectional view showing a surface-emitting laser device 200 of the comparative example. The surface-emitting laser device 200 of the comparative example includes a substrate 202 made of a compound semiconductor material, for example, GaAs, and a light-emitting section 31 disposed on the substrate 202. The light-emitting section 31 includes a second light-reflecting layer 22, a light-generating layer 23, and a first light-reflecting layer 21, which are stacked on the substrate 202. The light-emitting section 31 also includes a current-confining layer 32 provided on the first light-reflecting layer 21. The light-emitting section 31 is covered with an insulating film 203. The insulating film 203 includes an annular opening 204 that exposes the light-emitting section surface 31a of the light-emitting section 31. The insulating film 203 includes a portion that overlaps with the current passing section 32a of the current-confining layer 32 when viewed from the Z-axis direction. The first electrode 205 is electrically connected to the first light-reflecting layer 21 through the opening 204 of the insulating film 203. The first electrode 205 includes an opening 206 for emitting laser light at a position overlapping in the Z-axis direction with the current passing portion 32a of the current confinement layer 32. On the lower surface of the substrate 202, a second electrode 207 is formed.

[0059] The surface-emitting laser device 200 of the comparative example is mounted on the support 110 shown in FIG. 5 and FIG. 6, for example. The second electrode 207 of the comparative example is electrically connected to the first lead 131 shown in FIG. 5 and FIG. 6. For example, the current supplied to the light generating layer 23 flows from the first electrode 205 electrically connected to the first light reflecting layer 21 by the annular opening 204 of the insulating film 203 to the current passing portion 32a of the current confinement layer 32. The first electrode 205 is made of metal, so that the laser light does not easily pass through it. Therefore, the first electrode 205 includes an opening 206 for the laser light to pass through, and the annular opening 204 of the insulating film 203 is formed so as to surround the opening 204. Therefore, in the surface-emitting laser device 200 of the comparative example, current concentration occurs at the inner end of the insulating portion 32b surrounding the passing portion of the current confinement layer 32. Therefore, in the light generating layer 23, the current density may not be uniform, that is, the current density may be distributed.

[0060] In the surface-emitting laser device 200 of the comparative example, light generated in the light generating layer 23 is emitted to the outside from the opening 204 of the first electrode 205. The surface-emitting laser device 200 of the comparative example emits laser light toward the opposite side to the substrate 202. Heat generated in the light generating layer 23 of the light-emitting unit 31 is dissipated to the first lead 131 through the second light reflecting layer 22 and the substrate 202.

[0061] The surface-emitting laser device 10 of the above embodiment includes a Si substrate 40 including a first substrate surface 40a, a stack 20 including a light generating layer 23, a first light reflecting layer 21 and a second light reflecting layer 22 arranged to sandwich the light generating layer 23, and a bonding layer 50 bonding the Si substrate 40 and the stack 20. The stack 20 includes a light emitting portion recessed from the first stacking surface 20a toward the second stacking surface 20b and surrounded by a separation groove 28 formed in a ring shape in a plan view. The light emitting portion 31 includes a light emitting portion surface 31a and a light emitting portion side surface 31b constituting the separation groove 28. The bonding layer 50 contacts the light emitting portion surface 31a and the light emitting portion side surface 31b.

[0062] Heat generated in the light generating layer 23 of the light-emitting section 31 is transferred to the bonding layer 50 in contact with the light-emitting section side surface 31b. Therefore, the heat generated in the light-emitting section 31 can be easily dissipated to the outside of the light-emitting section 31. In other words, the surface-emitting laser device 10 can improve the heat dissipation performance for the heat generated in the light-emitting section 31. Therefore, the surface-emitting laser device 10 can improve the characteristics of the laser light generated in the light-emitting section 31.

[0063] The Si substrate 40 includes a main body 41 and a conductive layer 43. The main body 41 is a substrate made of a material containing Si. Therefore, in the surface-emitting laser device 10 of this embodiment, the main body 41 has higher thermal conductivity than a compound semiconductor substrate, for example, a GaAs substrate. For example, the thermal conductivity of a GaAs substrate is 55 W / m / K. In one example, the thermal conductivity of the main body 41 is 168 W / m / K. Therefore, the surface-emitting laser device 10 of this embodiment can improve heat dissipation from the bonding layer 50 to the first electrode 61.

[0064] Laminate 20 includes a light generating layer 23, and first light reflecting layer 21 and second light reflecting layer 22 arranged to sandwich light generating layer 23. Laminate 20 includes a light emitting section 31 surrounded by separation groove 28. Light emitting section 31 emits laser light of a specific wavelength component that is reflected by first light reflecting layer 21 and second light reflecting layer 22.

[0065] The laminate 20 includes a reflective film 34 provided on the light-emitting surface 31a of the light-emitting portion 31. The reflective film 34 is disposed at a position overlapping with the current passing portion 32a of the current confinement layer 32 in a plan view. The reflective film 34 reflects the laser light transmitted through the first light reflecting layer 21. Therefore, the surface-emitting laser device 10 can improve the intensity of the laser light transmitted through the second light reflecting layer 22 and radiated to the outside.

[0066] The reflective film 34 has electrical conductivity. The first conductive layer 51 of the bonding layer 50 covers the reflective film 34. The first conductive layer 51 is electrically connected to the first light reflective layer 21 between the insulating film 33 and the reflective film 34 in the opening 33a of the insulating film 33. The reflective film 34, which has electrical conductivity, is electrically connected to the first light reflective layer 21. In other words, it can be said that the first conductive layer 51 is electrically connected to the first light reflective layer 21 throughout the entire opening 33a of the insulating film 33.

[0067] In the surface-emitting laser device 10, an operating current for emitting laser light from the surface-emitting laser device 10 flows between the first electrode 61 and the second electrode 62. This operating current flows from the first conductive layer 51 electrically connected to the first electrode 61 through the current passing portion 32a of the current confinement layer 32 toward the second electrode 62. As described above, the first electrode 61 is electrically connected to the reflective film 34 disposed in the opening 33a of the insulating film 33. The operating current flows from the first conductive layer 51 and the reflective film 34 toward the current passing portion 32a. Therefore, in the current confinement layer 32, current concentration at the inner end of the insulating portion 32b can be alleviated. Therefore, the distribution of current density in the active layer 24 of the light generation layer 23 can be reduced.

[0068] As described above, the surface-emitting laser device 10 can improve the heat dissipation from the light-emitting section 31. This allows the operating current to be increased for the light-emitting section 31. The operating current affects the intensity of the laser light emitted from the surface-emitting laser device 10. Therefore, the surface-emitting laser device 10 can improve the intensity of the laser light.

[0069] (Method of manufacturing a surface-emitting laser device) Next, an example of a method for manufacturing the surface emitting laser device 10 shown in FIGS. 1 to 4 will be described. Fig. 8 to Fig. 25 are schematic cross-sectional views showing exemplary manufacturing steps of the surface-emitting laser device 10. Fig. 8 to Fig. 25 correspond to the cross-sectional structure of the surface-emitting laser device 10 shown in Fig. 2. For ease of understanding, in Fig. 8 to Fig. 25, the same reference numerals as in Fig. 2 are used for components that are the same as the final components of the surface-emitting laser device 10.

[0070] As shown in FIGS. 8 and 9, the method for manufacturing the surface-emitting laser device 10 includes forming, on a first semiconductor substrate 801, a semiconductor layer 820 for forming the laminate 20. As shown in FIG. As shown in FIG. 8, a first semiconductor substrate 801 is prepared. The first semiconductor substrate 801 may be in a wafer state. The first semiconductor substrate 801 may be a substrate in a wafer state for forming a plurality of surface-emitting laser devices 10. The dashed-dotted lines shown in FIG. 8 indicate regions (boundaries) for forming one surface-emitting laser device 10. The region sandwiched between the dashed-dotted lines becomes a formation region for one surface-emitting laser device 10. The dashed-dotted lines can also be said to be dicing lines DL for separating the surface-emitting laser devices 10.

[0071] The first semiconductor substrate 801 is selected according to the semiconductor layer to be formed on the first semiconductor substrate 801. In one example, the first semiconductor substrate 801 is a GaAs substrate. The first semiconductor substrate 801 may include an intermediate layer 802. The intermediate layer 802 may include, for example, a buffer layer.

[0072] 9, a semiconductor layer 820 is formed on a first semiconductor substrate 801. The semiconductor layer 820 includes a second light reflecting layer 22, a light generating layer 23, and a first light reflecting layer 21. The second light reflecting layer 22, the light generating layer 23, and the first light reflecting layer 21 are sequentially stacked on the first semiconductor substrate 801 to form the semiconductor layer 820. The semiconductor layer 820 includes a first stacking surface 20a and a second stacking surface 20b which become a stacked body 20. The second light reflecting layer 22, the light generating layer 23, and the first light reflecting layer 21 are formed by epitaxial growth (crystal growth).

[0073] 10, the method for manufacturing the surface-emitting laser device 10 includes forming a separation groove 28 in the semiconductor layer 820. The separation groove 28 is formed deeper than the light generating layer 23. The separation groove 28 is formed by selectively removing the first light reflecting layer 21, the light generating layer 23, and the second light reflecting layer 22, for example, by dry etching. The separation groove 28 forms a mesa portion that becomes the light emitting portion 31. The light emitting portion 31 includes a light emitting portion surface 31a and a light emitting portion side surface 31b.

[0074] 11, the method for manufacturing the surface emitting laser device 10 includes forming the current confinement layer 32. The current confinement layer 32 is formed by a heat treatment in water vapor. 12, the method for manufacturing the surface-emitting laser device 10 includes forming an insulating film 33. The insulating film 33 is formed by, for example, a CVD method. The insulating film 33 is formed so as to cover the surfaces of the first light reflecting layer 21, the light generating layer 23, and the second light reflecting layer 22.

[0075] 13, the method for manufacturing the surface-emitting laser device 10 includes forming an opening 33a in the insulating film 33. The opening 33a in the insulating film 33 is formed by selectively removing a portion covering the light-emitting surface 31a by, for example, wet etching. A part of the light-emitting surface 31a is exposed from the opening 33a in the insulating film 33.

[0076] 14, the manufacturing method of the surface-emitting laser device 10 includes forming a reflective film 34. The reflective film 34 is formed by, for example, a vapor deposition method. The reflective film 34 is formed within an opening 33a of the insulating film 33 and separated from the insulating film 33. Therefore, the light-emitting surface 31a of the light-emitting section 31 is exposed between the insulating film 33 and the reflective film 34.

[0077] 15 to 17, the method for manufacturing the surface-emitting laser device 10 includes forming a bonding layer 50. The formation of the bonding layer 50 includes forming a first conductive layer 51 and forming a second conductive layer 52.

[0078] 15, the method for manufacturing the surface-emitting laser device 10 includes forming a first conductive layer 51. The first conductive layer 51 is formed by, for example, a vapor deposition method so as to cover the insulating film 33 and the reflective film 34. The first conductive layer 51 is in contact with the first light reflective layer 21 between the insulating film 33 and the reflective film 34.

[0079] 16, the method for manufacturing the surface-emitting laser device 10 includes forming a second conductive layer 52. The second conductive layer 52 is formed so as to cover the surface of the first conductive layer 51 by, for example, a plating method. In one example, a plating mask is formed that covers the boundary portion and includes an opening that exposes a part of the surface of the first conductive layer 51, and the first conductive layer 51 is formed in the opening of the plating mask. The plating mask is then removed.

[0080] 17, the first conductive layer 51 is etched to form the bonding layer 50. For example, the second conductive layer 52 exposed from the second conductive layer 52 is removed by an etching method. By etching, a portion of the second conductive layer 52 that will become one surface-emitting laser device 10 remains. When forming a plurality of surface-emitting laser devices 10, the first conductive layer 51 is etched along a dicing line DL that is a boundary between adjacent formation regions. As a result, the bonding layer 50 including the first conductive layer 51 and the second conductive layer 52 is formed.

[0081] 18, the method for manufacturing the surface-emitting laser device 10 includes forming a stack 20. The stack 20 is formed by selectively removing the insulating film 33, the first light reflecting layer 21, the light generating layer 23, and the second light reflecting layer 22, for example, by dry etching.

[0082] As shown in FIG. 19, the manufacturing method of the surface-emitting laser device 10 includes preparing a Si substrate 840. The Si substrate 840 includes a first substrate surface 840a and a second substrate surface 840b. The Si substrate 840 includes a main body portion 841 including the through wiring 42, and a conductive layer 843 disposed on the first surface 841a of the main body portion 841. The Si substrate 840 is formed, for example, by thinning a silicon wafer on which the conductive layer 843 is formed. It can be said that the Si substrate 840 is in a wafer state. It can also be said that the manufacturing method of the surface-emitting laser device 10 includes preparing a wafer-like Si substrate 840.

[0083] 20, the method for manufacturing the surface-emitting laser device 10 includes bonding the laminate 20 to the Si substrate 840 with the bonding layer 50. The bonding can be performed by, for example, wafer bonding. The second conductive layer 52 of the bonding layer 50 shown in FIG. 18 is disposed facing the conductive layer 843 of the Si substrate 840. Then, the second conductive layer 52 of the bonding layer 50 is brought into contact with the conductive layer 843 of the Si substrate 840, and pressure and heat are applied to bond the second conductive layer 52 of the bonding layer 50 to the conductive layer 843 of the Si substrate 840.

[0084] As shown in Fig. 21, the method for manufacturing the surface-emitting laser device 10 includes removing the first semiconductor substrate 801 shown in Fig. 20. The removal of the first semiconductor substrate 801 can be performed by one or more methods such as wafer lapping, polishing, chemical etching, and the like.

[0085] 22, the method for manufacturing the surface-emitting laser device 10 includes forming a second electrode 62. The second electrode 62 is formed by, for example, a sputtering method or a vapor deposition method. The second electrode 62 includes an opening 62a. The opening 62a is formed by selectively removing the second electrode 62 by, for example, dry etching.

[0086] 23, the method for manufacturing the surface-emitting laser device 10 includes forming the first electrode 61. The first electrode 61 is formed by, for example, a vapor deposition method. As shown in FIGS. 24 and 25, the method for manufacturing the surface-emitting laser device 10 includes dividing the surface-emitting laser device 10 into individual pieces.

[0087] 24, the conductive layer 843 of the Si substrate 840 is divided. The conductive layer 843 can be divided by, for example, dry etching. At this time, a division groove 804 is formed in a first surface 841a on the conductive layer 843 side of the main body portion 841 of the Si substrate 840. That is, the conductive layer 843 is divided by forming the division groove 804 that reaches the main body portion 841 from the first substrate surface 840a in the Si substrate 840.

[0088] As shown in Fig. 25, the main body 841 of the Si substrate 840 is divided. The Si substrate 840 can be divided by, for example, blade dicing, laser dicing, or the like. For example, the surface-emitting laser device 10 is obtained by dividing the main body 841 from the second substrate surface 840b side of the Si substrate 840 by a dicing blade or laser light. By dividing the surface-emitting laser device 10, the main body side surface 41c of the main body 41 of the Si substrate 40 may include a first side surface 41ca on the conductive layer 43 side and a second side surface 41cb on the first electrode 61 side.

[0089] (Effects of the embodiment) As described above, according to this embodiment, the following effects are achieved. (1) Surface-emitting laser device 10 includes a Si substrate 40 including a first substrate surface 40a, a stack 20 including a light generating layer 23, a first light reflecting layer 21 and a second light reflecting layer 22 arranged to sandwich light generating layer 23, and a bonding layer 50 bonding Si substrate 40 and stack 20. Stack 20 includes a light emitting portion recessed from first stacking surface 20a toward second stacking surface 20b and surrounded by a separation groove 28 formed in a ring shape in a plan view. Light emitting portion 31 includes a light emitting portion surface 31a and a light emitting portion side surface 31b constituting separation groove 28. Bonding layer 50 contacts light emitting portion surface 31a and light emitting portion side surface 31b.

[0090] Heat generated in the light generating layer 23 of the light-emitting section 31 is transferred to the bonding layer 50 in contact with the light-emitting section side surface 31b. Therefore, the heat generated in the light-emitting section 31 can be easily dissipated to the outside of the light-emitting section 31. In other words, the surface-emitting laser device 10 can improve the heat dissipation performance for the heat generated in the light-emitting section 31. Therefore, the surface-emitting laser device 10 can improve the characteristics of the laser light generated in the light-emitting section 31.

[0091] (2) The Si substrate 40 includes a main body 41 and a conductive layer 43. The main body 41 is a substrate made of a material containing Si. Therefore, in the surface-emitting laser device 10 of this embodiment, the main body 41 has higher thermal conductivity than a compound semiconductor substrate, for example, a GaAs substrate. For example, the thermal conductivity of a GaAs substrate is 55 W / m / K. In one example, the thermal conductivity of the main body 41 is 168 W / m / K. Therefore, the surface-emitting laser device 10 of this embodiment can improve heat dissipation from the bonding layer 50 to the first electrode 61.

[0092] (3) The laminate 20 includes a reflective film 34 provided on the light-emitting surface 31a of the light-emitting portion 31. The reflective film 34 is disposed at a position overlapping the current passing portion 32a of the current confinement layer 32 in a plan view. The reflective film 34 reflects the laser light transmitted through the first light reflecting layer 21. Therefore, the surface-emitting laser device 10 can improve the intensity of the laser light transmitted through the second light reflecting layer 22 and radiated to the outside.

[0093] (4) In the surface-emitting laser device 10, an operating current for emitting laser light from the surface-emitting laser device 10 flows between the first electrode 61 and the second electrode 62. This operating current flows from the first conductive layer 51 electrically connected to the first electrode 61 to the second electrode 62 through the current passing portion 32a of the current confinement layer 32. As described above, the first electrode 61 is electrically connected to the reflective film 34 disposed in the opening 33a of the insulating film 33. The operating current flows from the first conductive layer 51 and the reflective film 34 to the current passing portion 32a. Therefore, in the current confinement layer 32, current concentration at the inner end of the insulating portion 32b can be alleviated. Therefore, the distribution of current density in the active layer 24 of the light generation layer 23 can be reduced.

[0094] (5) As described above, the surface-emitting laser device 10 can improve the heat dissipation from the light-emitting section 31. This allows the operating current to be increased for the light-emitting section 31. The operating current affects the intensity of the laser light emitted from the surface-emitting laser device 10. Therefore, the surface-emitting laser device 10 can improve the intensity of the laser light.

[0095] (Example of change) The above embodiment can be modified, for example, as follows. The above embodiment and the following modified examples can be combined with each other as long as no technical contradiction occurs. In the following modified examples, the same reference numerals as in the above embodiment are used for the parts common to the above embodiment, and the description thereof will be omitted.

[0096] The configuration of the surface-emitting laser device 10 may be modified as appropriate. 27 shows a surface-emitting laser device 310 of a modified example. The surface-emitting laser device 310 of the modified example includes a first protective film 301 that covers the stacking side surface 20c of the stacked body 20. The first protective film 301 may include, for example, silicon oxide such as SiO2 or SiO, SiN, SiON, ZrO2, or TiO. In one example, the first protective film 301 is a SiN film. The first protective film 301 may be formed so as to cover the peripheral portion of the first stacking surface 20a of the stacked body 20. The second electrode 62 covers the end portion 301a of the first protective film 301 from the Z-axis direction.

[0097] First stacking surface 20a of stacked body 20 is covered with insulating film 33. Stacking side surface 20c of stacked body 20 is covered with first protective film 301. Therefore, exposure of first light reflecting layer 21, light generating layer 23, and second light reflecting layer 22 included in stacked body 20 can be reduced.

[0098] The surface-emitting laser device 310 of the modified example may include a second protective film 302 covering the stacking side surface 50c of the bonding layer 50. The second protective film 302 may include, for example, silicon oxide such as SiO2 or SiO, SiN, SiON, ZrO2, or TiO. In one example, the second protective film 302 is a SiN film. The second protective film 302 may be formed continuously with the first protective film 301. The second protective film 302 may be formed so as to cover the peripheral portion of the second bonding surface 50b of the bonding layer 50. The second protective film 302 may be formed so as to expose the entire second bonding surface 50b of the bonding layer 50.

[0099] Next, an example of a method for manufacturing the surface-emitting laser device 310 of the modified example will be described. Fig. 28 to Fig. 30 are schematic cross-sectional views showing exemplary manufacturing steps of the surface-emitting laser device 310 of the modified example shown in Fig. 27. Fig. 28 to Fig. 30 correspond to the cross-sectional structure of the surface-emitting laser device 310 shown in Fig. 27.

[0100] As shown in Fig. 28, a stacked body 20 is formed on a first semiconductor substrate 801. The state shown in Fig. 28 is equivalent to the state shown in Fig. 18 described in the above embodiment. That is, the stacked body 20 and the bonding layer 50 are formed by the steps shown in Fig. 8 to Fig. 18 in the above embodiment.

[0101] 29, the manufacturing method of the surface-emitting laser device 310 includes forming a protective film 810. The protective film 810 is formed by, for example, a CVD method. The protective film 810 is formed so as to cover the stacking side surface 20c of the stacked body 20, the stacking side surface 50c of the bonding layer 50, and the second bonding surface 50b. The protective film 810 is formed so as to cover the surface of the first semiconductor substrate 801.

[0102] As shown in Fig. 30, the method for manufacturing the surface-emitting laser device 310 includes forming an opening 811 in the protective film 810 to expose a part of the first bonding surface 50a of the bonding layer 50. The opening 811 in the protective film 810 exposes the first bonding surface 50a, thereby enabling electrical bonding with the conductive layer 843 of the Si substrate 840 shown in Fig. 19. Through the above steps, a first protective film 301 covering the stacking side surface 20c of the laminate 20 and a second protective film 302 covering the stacking side surface 50c of the bonding layer 50 are formed. As for the steps after forming the first protective film 301 and the second protective film 302, the surface-emitting laser device 310 of the modified example is formed in the same manner as the steps shown in Figs. 19 to 27 of the above embodiment.

[0103] A surface-emitting laser device 410 of a modified example shown in FIG. 31 includes a Si substrate 440. The Si substrate 440 includes a body portion 441 and a conductive layer 43. The body portion 441 has conductivity. In one example, the body portion 441 may have the same conductivity type as the conductivity type of the first light reflecting layer 21. The body portion 441 may contain C as an impurity. The Si substrate 440 including the body portion 441 may omit the through wiring 42 shown in FIG. 2.

[0104] 2 is omitted from the surface-emitting laser device 510 of the modified example shown in Fig. 32. In the surface-emitting laser device 510 of this modified example, the first conductive layer 51 contacts the light-emitting surface 31a exposed through the opening 33a in the insulating film 33. In the surface-emitting laser device 510 of this modified example, current concentration in the current confinement layer 32 can be alleviated, as in the above embodiment. The surface-emitting laser device 510 of the modified example can reduce the distribution of current density in the active layer 24 of the light generating layer 23.

[0105] As used in this disclosure, the terms "connected," "contact," or any variation thereof, may mean a direct or indirect connection or contact between two or more elements.

[0106] The term "at least one" as used in this disclosure means "one or more" of the desired options. As an example, the term "at least one" as used herein means "only one option" or "both of two options" if the number of options is two. As another example, the term "at least one" as used herein means "only one option" or "any combination of two or more options" if the number of options is three or more.

[0107] The term "on" as used in this disclosure includes both the meanings of "on" and "above" unless the context clearly indicates otherwise. Thus, the phrase "a first layer is formed on a second layer" is intended to mean that in some embodiments, the first layer may be disposed directly on the second layer in contact with the second layer, while in other embodiments, the first layer may be disposed above the second layer without contacting the second layer. That is, the term "on" does not exclude a structure in which another layer is formed between the first layer and the second layer.

[0108] The Z-axis direction used in the present disclosure does not necessarily have to be a vertical direction, nor does it have to completely coincide with the vertical direction. Therefore, various structures according to the present disclosure (for example, the structure shown in FIG. 1) are not limited to the "up" and "down" of the Z-axis direction described in this specification being "up" and "down" of the vertical direction. For example, the X-axis direction may be a vertical direction, or the Y-axis direction may be a vertical direction.

[0109] (Additional Note) The technical ideas that can be understood from the present disclosure are described below. Note that, for the purpose of aiding understanding, not for the purpose of limitation, the components described in the appendices are given the reference symbols of the corresponding components in the embodiments. The reference symbols are shown as examples for the purpose of aiding understanding, and the components described in each appendix should not be limited to the components indicated by the reference symbols.

[0110] (Appendix 1) a Si substrate (40, 440) including a first substrate surface (40a); a laminate (20) including a light generating layer (23), and a first light reflecting layer (21) of a first conductivity type and a second light reflecting layer (22) of a second conductivity type arranged so as to sandwich the light generating layer (23); a bonding layer (50) that bonds the Si substrate (40, 440) and the laminate (20); Including, the laminate (20) includes a light-emitting section (31) that is recessed from a first laminate surface (20a) facing the first substrate surface (40a) toward a second laminate surface (20b) facing the opposite side to the first laminate surface (20a) and that is surrounded by a separation groove (28) that is formed in an annular shape in a plan view seen from a direction perpendicular to the first laminate surface (20a); the light-emitting portion (31) includes a light-emitting portion front surface (31a) facing the first substrate surface (40a) and a light-emitting portion side surface (31b) constituting the separation groove (28); The bonding layer (50) is in contact with the light emitting portion front surface (31a) and the light emitting portion side surface (31b). Surface emitting laser device.

[0111] (Appendix 2) the light emitting section (31) includes a current confinement layer (32) disposed between the first stacking surface (20a) and the second light reflecting layer (22); 2. A surface-emitting laser device as described in claim 1.

[0112] (Appendix 3) the current confinement layer (32) includes a current passing portion (32a) disposed in an inner region of the light emitting portion (31) and an insulating portion (32b) surrounding the current passing portion (32a); 3. A surface-emitting laser device as described in appendix 2.

[0113] (Appendix 4) the laminate (20) includes an insulating film (33) that covers the light-emitting portion front surface (31a) and the light-emitting portion side surface (31b) and has an opening (33a) that exposes a part of the light-emitting portion front surface (31a), The bonding layer (50) is in contact with a surface of the insulating film (33). 4. A surface-emitting laser device as described in appendix 3.

[0114] (Appendix 5) The laminate (20) includes a reflective film (34) provided on the light-emitting surface (31 a), the reflective film (34) is disposed at a position overlapping with the current passing portion (32a) in a plan view; 5. A surface-emitting laser device as described in appendix 4.

[0115] (Appendix 6) the reflective film (34) is disposed within the opening (33a) of the insulating film (33) and is disposed at a distance from the insulating film (33); 6. A surface-emitting laser device according to claim 5.

[0116] (Appendix 7) The surface roughness of the reflective film (34) is lower than the surface roughness of the bonding layer (50). 7. The surface-emitting laser device according to claim 5 or 6.

[0117] (Appendix 8) A second electrode (62) disposed on the second stacking surface (20b), 8. The surface-emitting laser device according to claim 7.

[0118] (Appendix 9) the second electrode (62) includes an opening (62a) formed at a position overlapping the current passing portion (32a) in a plan view; 9. The surface-emitting laser device according to claim 8.

[0119] (Appendix 10) the bonding layer (50) includes a first conductive layer (51) that covers a surface of the insulating film (33) and is in contact with the light emitting section (31) through the opening of the insulating film (33); 8. The surface-emitting laser device according to claim 5,

[0120] (Appendix 11) the first conductive layer (51) covers the reflective film (34) and is in contact with the first light reflective layer (21) between the reflective film (34) and the insulating film (33); 11. The surface-emitting laser device according to claim 10.

[0121] (Appendix 12) the bonding layer (50) includes a second conductive layer (52) in contact with the first conductive layer (51) and in contact with the Si substrate (40, 440); 12. The surface-emitting laser device according to claim 10 or 11.

[0122] (Appendix 13) The Si substrate (40) is made of a material containing Si, and includes an insulating main body (41), a third conductive layer (43) on the main body (41), and and a through-hole wiring (42) provided in the through-hole of the main body portion (41) and electrically connected to the third conductive layer (43). 13. A surface-emitting laser device according to any one of claims 1 to 12.

[0123] (Appendix 14) The Si substrate (440) is made of a material containing Si and includes a conductive main body (441) and a third conductive layer (43) on the main body (441). 13. A surface-emitting laser device according to any one of claims 1 to 12.

[0124] (Appendix 15) The body portion (41) of the Si substrate (40) includes a first side surface (41ca) on a bonding layer (50) side, and a second side surface (41cb) on a second electrode (62) side and positioned outside the first side surface (41ca). 15. The surface-emitting laser device according to claim 13 or 14.

[0125] (Appendix 16) The Si substrate (40, 440) includes a second substrate surface (40b) facing the opposite side to the first substrate surface (40a), A first electrode (61) provided on the second substrate surface (40b), 16. The surface-emitting laser device according to claim 13,

[0126] (Appendix 17) The first electrode (61) is formed to cover the center of the second substrate surface (40b) and to expose the peripheral portion of the second substrate surface (40b). 17. The surface-emitting laser device according to claim 16.

[0127] (Appendix 18) the third conductive layer is formed so as to expose a peripheral portion of the first lamination surface (20a) of the laminate (20); 18. A surface-emitting laser device according to any one of claims 13 to 17.

[0128] (Appendix 19) A first protective film (301) covering a side surface of the laminate (20), 19. A surface-emitting laser device according to any one of claims 1 to 18.

[0129] (Appendix 20) The first protective film (301) covers the periphery of the second stacking surface (20b) of the stack (20). 20. The surface-emitting laser device according to claim 19.

[0130] (Appendix 21) A second protective film (302) covering a side surface of the bonding layer (50), 21. The surface-emitting laser device according to claim 19 or 20.

[0131] (Appendix 22) Including a single or multiple light emitting units (31), 22. A surface-emitting laser device according to claim 1.

[0132] (Appendix 23) The reflectance of the first light reflecting layer (21) is greater than the reflectance of the second light reflecting layer (22). 23. The surface-emitting laser device according to claim 1,

[0133] (Appendix 24) forming a laminate (20) on a first semiconductor substrate (801), the laminate including a light generating layer (23), and a first light reflecting layer (21) of a first conductivity type and a second light reflecting layer (22) of a second conductivity type arranged to sandwich the light generating layer (23); forming a bonding layer (50) on the laminate (20); bonding a bonding layer (50) to a first substrate surface (40a) of a Si substrate (40, 440); removing the first semiconductor substrate (801); Including, the laminate (20) includes a light-emitting section (31) that is recessed from a first laminate surface (20a) that faces the first substrate surface (40a) toward a second laminate surface (20b) that faces the opposite side to the first laminate surface (20a) and is surrounded by a separation groove (28) that is formed in an annular shape in a plan view; the light-emitting portion (31) includes a light-emitting portion front surface (31a) facing the first substrate surface (40a) and a light-emitting portion side surface (31b) constituting the separation groove (28); The bonding layer (50) is in contact with the light emitting portion front surface (31a) and the light emitting portion side surface (31b). A method for manufacturing a surface emitting laser device.

[0134] (Appendix 25) The method includes sequentially stacking the second light reflecting layer (22), the light generating layer (23), and the first light reflecting layer (21) on a first semiconductor substrate (801) to form a semiconductor layer (820); The semiconductor layer (820) includes the first stacking surface (20a) and the second stacking surface (20b) which become the stacked body (20). A method for manufacturing the surface-emitting laser device according to claim 24.

[0135] (Appendix 26) forming the separation trench (28) deep in the semiconductor layer (820) to form the light emitting section (31) including the second light reflecting layer (22), the light generating layer (23), and the first light reflecting layer (21); A method for manufacturing the surface-emitting laser device according to claim 25.

[0136] (Appendix 27) forming a current confinement layer (32) on the first light reflecting layer (21); A method for manufacturing the surface-emitting laser device according to claim 25 or 26.

[0137] (Appendix 28) forming an insulating film (33) that covers the light-emitting portion front surface (31a) and the light-emitting portion side surface (31b); forming an opening in the insulating film (33) to expose the light emitting surface (31 a); forming the bonding layer (50) covering the insulating film (33); Including, 28. A method for manufacturing a surface-emitting laser device according to any one of claims 25 to 27.

[0138] (Appendix 29) forming a reflective film (34) spaced apart from the insulating film (33) within the opening of the insulating film (33); A method for manufacturing the surface-emitting laser device according to claim 28.

[0139] (Appendix 30) The bonding layer (50) is a first conductive layer (51) formed on the laminate (20); a second conductive layer (52) formed on the first conductive layer (51); Including, 30. A method for manufacturing the surface-emitting laser device according to claim 29.

[0140] (Appendix 31) Etching the first conductive layer (51) to expose the first stacking surface (20a); forming the laminate (20) by etching the semiconductor layer (820) from the exposed first laminate surface (20a); Including, A method for manufacturing the surface-emitting laser device according to claim 30.

[0141] (Appendix 32) The Si substrate (40, 440) includes a body portion containing Si and having insulating properties, and a third conductive layer on the body portion, Bonding the bonding layer (50) to the first substrate surface (40a) of the Si substrate (40, 440) includes bonding the second conductive layer (52) and the third conductive layer. 32. A method for manufacturing a surface-emitting laser device according to claim 30 or 31.

[0142] (Appendix 33) forming a second electrode (62) including an opening on the second light reflecting layer (22); forming a first electrode (61) on a second substrate surface (40b) of the Si substrate (40, 440); Including, 33. A method for manufacturing a surface-emitting laser device according to any one of claims 25 to 32.

[0143] (Appendix 34) The first semiconductor substrate (801) and the Si substrate (40, 440) are wafer-like substrates, A plurality of the laminates (20) and a plurality of bonding layers (50) are formed on the first semiconductor substrate (801); bonding a plurality of the bonding layers (50) to the Si substrate (40, 440); After removing the first semiconductor substrate (801), cutting the Si substrate (40, 440) of the wafer-like body to separate a plurality of surface-emitting laser devices; Including, A method for manufacturing a surface-emitting laser device according to any one of claims 25 to 33.

[0144] The above description is merely illustrative. Those skilled in the art may recognize that many more possible combinations and permutations are possible other than the components and methods (manufacturing processes) listed for the purpose of describing the technology of the present disclosure. The present disclosure is intended to embrace all alternatives, modifications, and alterations that fall within the scope of the present disclosure, including the scope of the claims. [Explanation of symbols]

[0145] 10 Surface-emitting laser device 11 Top of device 12 Underside of device 20 Laminate 20a 1st laminated surface 20b 2nd laminated surface 20c laminated side 21 1st light reflective layer 21a 1st reflective layer 21b 2nd reflective layer 22 Second light reflective layer 22a 3rd reflective layer 22b 4th reflective layer 23 Light generating layer 24 Active layer 25 Cladding Layer 25 First cladding layer 26 Cladding Layer 26 Second cladding layer 28 Separation groove 28a Inner surface 28b Outer surface 28c bottom 31 Light emitting part 31a Light-emitting surface 31b Light-emitting part side 32 Current confinement layer 32a Current passing section 32b Insulation 33 Insulating film 33a aperture 34 Reflective film 40Si substrate 40a First substrate surface 40b 2nd board surface 41 Main body 41a 1st body side 41b 2nd body side 41c Main unit side 41ca 1st side 41cb 2nd side 41d through hole 42 Through Wiring 43 Conductive Layer 50 Bonding layer 50a 1st joint surface 50b 2nd joint surface 50c laminated sides 51 First conductive layer 52 Second conductive layer 61 1st electrode 62 2nd electrode 62a aperture 100 Light emitting device 110 Support 120 Base material 121 Bottom side 122 Side 123 Top surface 124 Recessed part 125 Bottom 126 Inner surface 130 Conductive part 131 1st Lead 131a 1st page 131b 2nd side 132 2nd Lead 132a 3rd page 132b Side 4 141 Conductive bonding material 142 Wire 150 Sealing resin 200 Surface emitting laser device 202 Substrate 203 Insulating film 204 Aperture 205 1st electrode 206 Aperture 207 2nd electrode 301 1st protective film 301a End 302 Second protective film 310 Surface-emitting laser device 410 Surface-emitting laser device 440 Si substrate 441 Main body 510 Surface emitting laser device 801 First semiconductor substrate 802 Middle Class 804 Dividing groove 810 Protective film 811 Aperture 820 Semiconductor layer 840 Si substrate 840a First board surface 840b Second substrate surface 841 Ontology Department 841a Page 1 843 Conductive layer

Claims

1. a Si substrate including a first substrate surface; a laminate including a light generating layer, and a first light reflecting layer of a first conductivity type and a second light reflecting layer of a second conductivity type disposed on either side of the light generating layer; a bonding layer that bonds the Si substrate and the laminate; Including, the laminate includes a light-emitting portion surrounded by a separation groove recessed from a first stacking surface facing the first substrate surface toward a second stacking surface facing the opposite side to the first stacking surface and formed in an annular shape in a plan view seen from a direction perpendicular to the first stacking surface, the light emitting portion includes a light emitting portion surface facing the first substrate surface and a light emitting portion side surface constituting the separation groove, The bonding layer is in contact with the light emitting portion surface and the light emitting portion side surface. Surface emitting laser device.

2. the light emitting section includes a current confinement layer disposed between the first stacking surface and the second light reflective layer, 2. The surface emitting laser device according to claim 1.

3. the current confinement layer includes a current passing portion disposed in an inner region of the light emitting portion, and an insulating portion surrounding the current passing portion; 3. The surface emitting laser device according to claim 2.

4. the laminate includes an insulating film covering the light-emitting portion front surface and the light-emitting portion side surface and having an opening exposing a part of the light-emitting portion front surface, The bonding layer is in contact with a surface of the insulating film.

4. The surface emitting laser device according to claim 3.

5. the laminate includes a reflective film provided on a surface of the light-emitting portion, The reflective film is disposed at a position overlapping the current passing portion in a plan view.

5. The surface emitting laser device according to claim 4.

6. the reflective film is disposed in the opening of the insulating film and is spaced apart from the insulating film; 6. The surface emitting laser device according to claim 5.

7. The surface roughness of the reflective film is lower than the surface roughness of the bonding layer.

6. The surface emitting laser device according to claim 5.

8. A second electrode is disposed on the second stacking surface.

4. The surface emitting laser device according to claim 3.

9. the second electrode includes an opening formed at a position overlapping the current passing portion in a plan view; 9. The surface emitting laser device according to claim 8.

10. the bonding layer includes a first conductive layer that covers a surface of the insulating film and is in contact with the light emitting portion through the opening of the insulating film; 6. The surface emitting laser device according to claim 5.

11. the first conductive layer covers the reflective film and is in contact with the first light reflective layer between the reflective film and the insulating film; 11. The surface emitting laser device according to claim 10.

12. the bonding layer includes a second conductive layer in contact with the first conductive layer and in contact with the Si substrate; 11. The surface emitting laser device according to claim 10.

13. The Si substrate includes a body portion made of a material containing Si and having insulating properties, a third conductive layer on the body portion, and a through wiring provided in a through hole of a semiconductor substrate and electrically connected to the third conductive layer.

2. The surface emitting laser device according to claim 1.

14. The Si substrate includes a body portion made of a material containing Si and having electrical conductivity, and a third conductive layer on the body portion.

2. The surface emitting laser device according to claim 1.

15. The main body portion of the Si substrate includes a first side surface on a bonding layer side and a second side surface on a second electrode side and located outside the first side surface.

14. The surface emitting laser device according to claim 13.

16. the Si substrate includes a second substrate surface facing opposite to the first substrate surface, A first electrode is provided on the second substrate surface.

14. The surface emitting laser device according to claim 13.

17. the first electrode is formed to cover a center of the second substrate surface and to expose a peripheral portion of the second substrate surface; 17. The surface emitting laser device according to claim 16.

18. the third conductive layer is formed so as to expose a peripheral portion of the first stacking surface of the stacked body.

14. The surface emitting laser device according to claim 13.

19. A first protective film covering a side surface of the laminate, 19. The surface emitting laser device according to claim 1.

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