Semiconductor device

Abstract

To reduce common noise from light reception data.SOLUTION: A display module includes a display device and a readout circuit. A first pixel and a second pixel, which are adjacent to each other, in the display device include a light-receiving element and a light-emitting element. The readout circuit includes a differential input circuit. Common noise generated when display data is applied to the light-emitting element may have an influence on a first light-receiving signal output by the first pixel and a second light-receiving signal output by the second pixel. First current is generated using the first light-receiving signal and a lamp signal, and second current is generated using the second light-receiving signal and a first potential. The differential input circuit can remove the common noise from the first light-receiving signal when the first current and the second current are controlled to have the same current value.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One aspect of the present invention relates to a display module. The present invention relates to a display device having a light-emitting device (also called a light-emitting element) and a light-emitting device (also called a light-emitting element). One embodiment of the present invention is a light-emitting device having a light-receiving and light-emitting device. Another embodiment of the present invention relates to a display device including a light receiving device or a light receiving / emitting device. Another embodiment of the present invention relates to a readout circuit for reading out a received light signal from a received light signal. The present invention relates to a noise removal circuit that reduces common noise and extracts light reception data.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the semiconductor device include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, and a lighting device. , input device (e.g., touch sensor, etc.), input / output device (e.g., touch panel, etc.), The driving method thereof or the manufacturing method thereof can be given as an example. [Background technology]

[0003] In recent years, various applications of display devices have been considered. For example, the use of large display devices Examples include digital signage, PID (Public Information Display), home television equipment In addition, mobile information terminals and In response to this, the development of smartphones and tablet devices equipped with touch panels is underway.

[0004] For example, in the case of mobile information terminals, personal characteristics are used to restrict the use of the terminal. Fingerprint authentication or face authentication, which have been used for a long time, are used. Various methods have been proposed for fingerprint authentication. For example, in an optical authentication method, a light source is irradiated onto an object and the reflected light is received. There is a method for recognizing an object by detecting it with a light element. A counter circuit is disclosed for quantizing the emitted signal. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2010-288218 A Summary of the Invention [Problem to be solved by the invention]

[0006] One embodiment of the present invention is a display device having a light-receiving function, One object of the present invention is to provide a method for reducing common noise from a received light signal. An object of one embodiment of the present invention is to provide a noise removal circuit for a novel display module. One of the objectives of the project is to provide a

[0007] The description of these problems does not preclude the existence of other problems. It is not necessary for the invention to solve all of these problems. It is possible to extract problems other than those mentioned above from the description of the claim. [Means for solving the problem]

[0008] One embodiment of the present invention is a display module including a display device and a read-out circuit. The display device has a first pixel and a second pixel adjacent to each other, and the first pixel and the second pixel The readout circuit has a differential input circuit. , a ramp signal and a first potential are applied. The differential input circuit is The first current is controlled so that the current values ​​of the first light receiving signal and the first current are the same. a second current is generated using the second light receiving signal and the first potential; will be done.

[0009] One embodiment of the present invention is a display module including a display device and a read-out circuit. The display device has a first pixel and a second pixel adjacent to each other. The first pixel includes a first subpixel. and a second sub-pixel, the second pixel having a third sub-pixel and a fourth sub-pixel. The first subpixel and the third subpixel have a light receiving element, and the second subpixel and the fourth subpixel have a light receiving element. The element includes a light emitting element. The readout circuit includes a differential input circuit. The differential input circuit receives a first current and a second potential. The first current is controlled so that the current values ​​of the first and second currents are the same. The second current is generated using the ramp signal, and the second current is generated using the second light receiving signal and the first potential. is generated.

[0010] The differential input circuit is controlled so that the first current and the second current are the same, It is possible to remove common noise from the first received light signal.

[0011] In the above configuration, the light-emitting element has a first pixel electrode, a first active layer, and a common electrode. Preferably, the first active layer has a first organic compound. The second active layer has a second organic compound. It is preferable.

[0012] In the above structure, the display device includes a transistor, and the transistor has a gold layer in a semiconductor layer. The transistor preferably has a metal oxide. The transistor preferably has a back gate. I wish.

[0013] In the above structure, the display device is preferably flexible.

[0014] One aspect of the present invention is a display device including the above-mentioned display module, an antenna, a battery, a housing, a camera, a switch, and a display unit. The electronic device has at least one of a speaker, a microphone, and an operation button. Effect of the Invention

[0015] One embodiment of the present invention is a display device having a light-receiving function, One aspect of the present invention is a noise suppressor that reduces common noise from a received light signal. A removal circuit can be provided. One aspect of the present invention provides a novel display module. It is possible.

[0016] The description of these effects does not preclude the existence of other effects. It is not necessary for the invention to have all of these effects. It is possible to extract other effects from this. [Brief description of the drawings]

[0017] [Figure 1] FIG. 1 is a block diagram illustrating an example of a display module. [Diagram 2] 2A to 2D are top views showing an example of a pixel, and Fig. 2E and Fig. 2F are circuit diagrams showing an example of a pixel circuit. [Diagram 3]FIG. 3 is a block diagram illustrating an example of a display module. [Figure 4] 4A to 4C are circuit diagrams illustrating an example of a noise removal circuit. [Diagram 5] FIG. 5 is a flowchart illustrating an example of the operation of the display module. [Figure 6] FIG. 6 is a timing chart illustrating an example of the operation of the read circuit. [Figure 7] FIG. 7 is a circuit diagram illustrating the comparison circuit. [Figure 8] Figures 8A to 8D and 8F are cross-sectional views showing an example of a display device, and Figures 8E and 8G are diagrams showing examples of images captured by the display device. [Figure 9] 9A to 9G are top views showing an example of a pixel. [Figure 10] 10A and 10B are cross-sectional views showing an example of a display device. [Figure 11] 11A and 11B are cross-sectional views showing an example of a display device. [Figure 12] 12A to 12C are cross-sectional views showing an example of a display device. [Figure 13] Fig. 13A is a cross-sectional view showing an example of a display device, Fig. 13B and Fig. 13C are diagrams showing an example of an upper surface layout of a resin layer. [Figure 14] FIG. 14 is a perspective view showing an example of a display device. [Figure 15] FIG. 15 is a cross-sectional view showing an example of a display device. [Figure 16] FIG. 16 is a cross-sectional view showing an example of a display device. [Figure 17] Fig. 17A is a cross-sectional view illustrating an example of a display device, and Fig. 17B is a cross-sectional view illustrating an example of a transistor. [Figure 18] 18A and 18B are diagrams illustrating an example of an electronic device. [Figure 19] 19A to 19D are diagrams showing an example of an electronic device. [Figure 20]20A to 20F are diagrams showing an example of an electronic device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0018] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various changes and modifications may be made in the form and details without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the present invention can be realized by the following embodiments. The present disclosure should not be construed as being limited to the contents of the preceding paragraph.

[0019] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and the repeated explanations are omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be used.

[0020] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as in the actual embodiment, for ease of understanding. Therefore, the disclosed invention may not necessarily represent the actual position, size, range, etc. The present invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

[0021] The words "film" and "layer" may be interchangeable depending on the circumstances. For example, the term "conductive layer" can be used interchangeably with the term "conductive film." ". Alternatively, for example, the term "insulating film" may be changed to It is possible to change the term to "insulating layer."

[0022] (Embodiment 1) In this embodiment, a display module according to one embodiment of the present invention will be described.

[0023] A display module according to one embodiment of the present invention includes a display device and a read-out circuit. The pixel region, the first gate driver, the second gate driver, and the source driver are The pixel region has a plurality of pixels. Therefore, the following description will be given using a first pixel and a second pixel adjacent to each other along the same wiring.

[0024] The first pixel has a first subpixel and a second subpixel, and the second pixel has a third subpixel. The first subpixel and the third subpixel each have a light receiving element, The second subpixel and the fourth subpixel each have a light-emitting element.

[0025] In addition, the light-emitting element and the light-receiving element of one embodiment of the present invention preferably have a common electrode. The light-emitting element has a first pixel electrode, a first active layer, and a common electrode. The layer preferably has a first organic compound. The light receiving element further includes a second pixel electrode, The second active layer includes a second organic compound. In this case, it is preferable that the first active layer functions as a light emitting layer and the second active layer functions as a photoelectric conversion layer. In the display device according to one embodiment of the present invention, a light-emitting element and a light-receiving element are formed in the same process. The light-emitting element can be fabricated in as little as one step. good.

[0026] Here, common noise in a display device will be described. The first light receiving signal output by the pixel and the second light receiving signal output by the third sub-pixel (hereinafter, Common noise is electrical noise that is superimposed on the received light signal. When an image signal is applied to the light emitting elements of the second and fourth subpixels, A signal provided to a signal line or a scanning line connected to the fourth sub-pixel, or a display pixel This occurs due to a current flowing through the cathode electrode, etc., that is commonly connected between the elements. The light receiving signal is most susceptible to the influence of common noise during the period when the image signal is applied to the light emitting element. .

[0027] The readout circuit is CDS (Correlated Double Sampling) The noise elimination circuit includes a noise elimination circuit, a counter circuit, and a latch circuit. has a differential input circuit.

[0028] As an example, a case where the CDS circuit reads out a light receiving signal from the first subpixel will be described. The CDS circuit can read out a detection signal including an offset component from the first subpixel. Furthermore, the offset component can be extracted by reading out the initialization signal from the first subpixel. The offset component can be cancelled by extracting the difference between the detection signal and the initialization signal. However, at this point, the first received light signal can be extracted. In this case, the common noise is not removed but is included.

[0029] The offset component is caused by the variation of transistors used in pixels, the effect of wiring, etc. The detection signal is the component caused by the parasitic capacitance of the light receiving element. The initialization signal is a signal that changes according to the amount of light received by the light receiving element. The reset signal is a signal that provides a reset signal to a pixel and does not change according to the amount of light received by the light receiving element.

[0030] The noise elimination circuit has a function of eliminating common noise from the received light signal. The circuit has a comparator circuit, and the comparator circuit has a differential input circuit. The differential input circuit has two or more inputs. It is preferable that the comparator circuit and the counter circuit are used. The noise elimination circuit can be configured by combining the ramp signal and the It is preferable that the noise reduction circuit is applied with a potential of 1 from the first subpixel. A first light receiving signal generated from the first sub-pixel and a second light receiving signal generated from the third sub-pixel are used. The first current is generated using the first light receiving signal and the lamp signal, and the second current is generated using the second light receiving signal and the lamp signal. The first current is generated by using the first light receiving signal and the first potential. The first current is controlled to be equal to the second current, and the second current is controlled to be equal to the first light receiving signal. Here, the ramp signal is a signal in which the magnitude of the voltage changes over time. This is a signal.

[0031] Next, a display module according to one embodiment of the present invention will be described with reference to FIGS. Fig. 1 is a block diagram illustrating an example of a display module.

[0032] The display module 10 includes a display device 100 and a readout circuit 40. 00 is a pixel region 20, a source driver 11, a gate driver 12, and a gate driver 13. , a plurality of wirings SL, a plurality of wirings GL, a plurality of wirings SE, and a plurality of wirings SM. The pixel region 20 includes a plurality of pixels 30. In this embodiment, for the sake of simplicity, Therefore, the description may be given using adjacent pixels 30a and 30b.

[0033] The pixel 30 includes a plurality of sub-pixels 31 and one or more sub-pixels 32. Each of the sub-pixels 31 has a light-emitting element, and the sub-pixel 32 has a light-receiving element. For example, one pixel 30 may have a sub-pixel that emits red light. The pixel 31R emits green light, the sub-pixel 31G emits blue light, and the sub-pixel 31B emits blue light. In addition, when the sub-pixel 32 has a plurality of light receiving elements, each of the light receiving elements is preferably a different pixel. For example, the subpixel 32 has two light receiving elements. In this case, one can receive light having a peak wavelength in the visible light range, and the other can receive infrared light. The pixel 30 will be described in detail in FIG.

[0034] The source driver 11 can provide image data (image signals) to the sub-pixels 31. The gate driver 12 outputs a scanning signal for selecting the sub-pixel 31 to the wiring GL. The gate driver 13 transmits a scanning signal for selecting the sub-pixel 32 to the wiring S The scanning signal output to the wiring GL can be output to the gate driver 1 The scanning signal output to the wiring SE is generated from the signal SP1 provided to the gate 2. The output signal SP2 is generated from a signal SP2 provided to the port driver 13.

[0035] The read circuit 40 includes a plurality of CDS circuits 41, a plurality of noise removal circuits 42, a plurality of counters, and a plurality of counters. The read circuit 40 includes a counter circuit 43 and a plurality of latch circuits 44. For example, the CDS circuit 41 may be included in the display device 100. By incorporating the above-mentioned, the parasitic capacitance generated in the wiring SM connected to the CDS circuit 41 can be reduced. The noise elimination circuit 42 has a differential input circuit. , a ramp signal and a first potential are preferably provided.

[0036] Next, the electrical connection of the read circuit 40 will be described. 1[m] is electrically connected to the sub-pixel 32 of the pixel 30a via the wiring SM[k+1]. The CDS circuit 41[m+1] is connected to the pixel 30b via the wiring SM[k+3]. The noise removal circuit 42[m] is electrically connected to the sub-pixel 32 that is connected to the wiring MD[m]. and is electrically connected to the CDS circuit 41[m] via the wiring MD[m+1]. The noise elimination circuit 42[m] is electrically connected to the counter circuit 41[m+1]. The counter circuit 43[m] is electrically connected to the latch circuit 44[m]. They are electrically connected, where i, j, k, and m are positive integers.

[0037] The sub-pixel 32 of the pixel 30a and the sub-pixel 32 of the pixel 30b are connected to the wiring S E[j] is selected by the selection signal given to the wire SE[j]. By providing the above, the CDS circuit 41[m] and the CDS circuit 41[m+1] Alternatively, the sub-pixels 32 of the pixel 30b each provide a light reception signal.

[0038] As an example, the CDS circuit 41[m] includes only the elements of the sub-pixel 32 of the pixel 30a. The offset component due to the parasitic capacitance of the wiring SM[k+1] is removed. When the CDS circuit 41[m] reads out a light reception signal from the subpixel 32, The CDS circuit 41[m] reads out a detection signal including an offset component from the corresponding sub-pixel 32. Furthermore, by reading out the initialization signal from the sub-pixel 32, the offset component The offset component can be extracted by extracting the difference between the detection signal and the initialization signal. However, the detection signal and the initialization signal can be extracted. Since the signal contains common noise, the received signal contains common noise. .

[0039] The noise elimination circuit 42 has a function of eliminating common noise from the received light signal. The noise elimination circuit 42 has a comparison circuit, and the comparison circuit has a differential input circuit. A ramp signal and a first potential are applied to the line 42. 2 is a signal obtained by dividing the first light receiving signal provided by the CDS circuit 41[m] and the CDS circuit 41[m+1 The comparison circuit uses the first light receiving signal and the second light receiving signal provided by the first light receiving signal. A first current is generated using the photodetection signal, and a second current is generated using the second photodetection signal and the first potential. A differential input circuit generates a first current and a second current such that the current values ​​of the first current and the second current are the same. By controlling the first light receiving signal to be equal to or smaller than the first light receiving signal, it is possible to remove common noise from the first light receiving signal.

[0040] The first light receiving signal from which the common noise has been removed is output as a signal Cout to the counter circuit 4. The signal Cout is quantized by a counter circuit 43 to obtain data. The data Dout is converted to Dout by the processor (not shown) and the control circuit (not shown). The present invention can be easily handled by a video processing device (not shown). Details of the counter circuit 43 and the latch circuit 44 will be omitted.

[0041] [Pixels] A pixel included in a display device according to one embodiment of the present invention will be described. Each pixel has a plurality of sub-pixels. has one light emitting element, one light receiving / emitting element, or one light receiving element.

[0042] Each of the pixels includes a sub-pixel having a light-emitting element, a sub-pixel having a light-receiving element, and The pixel has one or more sub-pixels each having a light emitting / receiving element.

[0043] For example, a pixel may have a plurality of sub-pixels (e.g., three or four) each having a light-emitting element. It has one sub-pixel having a photoelement.

[0044] The light receiving element may be provided in all pixels or in some pixels. Also, one pixel may have a plurality of light receiving elements. The resolution of the light receiving element and the resolution of the light emitting element may be They may be different from each other.

[0045] When a pixel has three sub-pixels each having a light-emitting element, the three sub-pixels are R, G The three sub-pixels are yellow (Y), cyan (C), and magenta (M). When a pixel has four sub-pixels each having a light-emitting element, the four sub-pixels and Examples include four sub-pixels of R, G, B, and white (W), and four sub-pixels of R, G, B, and Y. Some examples include:

[0046] The pixel 30 shown in FIGS. 2A to 2C includes subpixels 31R and 31G each having a light-emitting element. In this embodiment, the pixel has a sub-pixel 31B and a sub-pixel 32 having a light receiving element. The arrangement of the subpixels shown in the form is not limited to the order shown in the figure. The position of element 31G may be reversed.

[0047] Each of the pixels 30 shown in FIGS. 2A to 2C includes a sub-pixel 32 having a light receiving function, a red sub-pixel 33 having a light receiving function, and a red sub-pixel 34 having a light receiving function. A subpixel 31R that exhibits green light, a subpixel 31G that exhibits blue light, and It has element 31B.

[0048] The pixel shown in FIG. 2A is a matrix array, and the pixel shown in FIG. 2B is a stripe array. In addition, FIG. 2C shows a stripe arrangement in which three sub-pixels that emit red light are arranged in a horizontal row. 1R, a sub-pixel 31G that exhibits green light, and a sub-pixel 31B that exhibits blue light are arranged, In this example, a sub-pixel 32 having a light receiving function is disposed below the pixel. The subpixels 31R, 31G, and 31B are arranged in the same row. It is placed on a different line than 32.

[0049] The pixel shown in FIG. 2D has the same configuration as the pixel shown in FIG. 2C, but emits light other than R, G, and B. The sub-pixel 31X is used. In addition to R, G, and B, the sub-pixels 31X and 31X are used. The sub-pixels 31X receive infrared light, and the sub-pixels 31X receive magenta light, infrared light, and the like. In this case, the sub-pixel 32 having a light receiving function preferably has a function of detecting infrared light. The sub-pixel 32 having a light receiving function has a function of detecting both visible light and infrared light. The wavelength of light detected by the light receiving element can be determined according to the application of the sensor. do.

[0050] Alternatively, for example, the pixel may have a sub-pixel 31W having a light-emitting element that emits white light, and The pixel has a plurality of sub-pixels 32 each having a light receiving element that receives light in a wavelength range.

[0051] Alternatively, for example, the pixel may have a plurality of sub-pixels each having a light-emitting element, and a sub-pixel each having a light-receiving or light-emitting element. It has one pixel.

[0052] In a display device having light receiving and emitting elements, the pixel arrangement is changed in order to incorporate a light receiving function into the pixels. Therefore, the aperture ratio and resolution are not reduced, and the image capturing function and the sensing function are added to the display. One or both of the above functions may be added.

[0053] The light emitting / receiving elements may be provided in all pixels, or may be provided in only some pixels. Furthermore, one pixel may have a plurality of light receiving and emitting elements.

[0054] [Pixel circuit example] A display device according to one embodiment of the present invention includes a first pixel circuit having a light-receiving element and a light-emitting element in a display portion. and a second pixel circuit having a first pixel circuit and a second pixel circuit having a second pixel circuit. The first pixel circuit corresponds to the sub-pixel 32 in FIG. The pixel circuit corresponds to the sub-pixel 31 in FIG.

[0055] FIG. 2E shows an example of a first pixel circuit having a light receiving element, and FIG. 2F shows an example of a first pixel circuit having a light emitting element. 1 shows an example of a second pixel circuit.

[0056] The first pixel circuit shown in FIG. 2E includes a light receiving element PD, a transistor M1, a transistor M2, , transistor M3, transistor M4, and capacitance C1. Here, the light receiving element P D shows an example in which a photodiode is used.

[0057] The cathode of the light receiving element PD is electrically connected to the wiring V1, and the anode of the transistor M1 The gate of the transistor M1 is electrically connected to either the source or drain of the TX, and the other of the source and drain is one electrode of the capacitance C1. The source or drain of the transistor M2 is electrically connected to the gate of the transistor M3. The transistor M2 has a gate electrically connected to the wiring RES and a source or drain The other end of the transistor M3 is electrically connected to the wiring V2. One of the terminals is electrically connected to the wiring V3, and the other terminal is the source or drain of the transistor M4. The gate of the transistor M4 is electrically connected to the wiring SE. The other of the source and drain is electrically connected to the wiring OUT1. The other electrode of the capacitor C1 is electrically connected to the wiring VCP. The pole may be electrically connected to wire V3.

[0058] A constant potential is supplied to the wiring V1, the wiring V2, and the wiring V3. When driving the transistor with a reverse bias, a potential lower than the potential of the wiring V1 is supplied to the wiring V2. The transistor M2 is controlled by a signal supplied to the wiring RES. A function that resets the potential of the node connected to the gate of M3 to the potential supplied to wiring V2. The transistor M1 is controlled by a signal supplied to the wiring TX, and the light receiving element P It has the function of controlling the timing at which the potential of the above node changes depending on the current flowing through D. The transistor M3 functions as an amplifying transistor that outputs an output according to the potential of the node. The transistor M4 is controlled by a signal supplied to the line SE, and A selection transistor that connects the output according to the potential to the wiring OUT1 and reads it out with an external circuit. It functions as:

[0059] The second pixel circuit shown in FIG. 2F includes a light-emitting element EL, a transistor M5, a transistor M6 , a transistor M7, and a capacitor C2. In particular, the use of organic EL elements as the light-emitting element EL is is preferred.

[0060] The transistor M5 has a gate electrically connected to the wiring GL and a source or drain One of the electrodes is electrically connected to the wiring SL, and the other of the source and drain is one of the electrodes of the capacitance C2. , and electrically connected to the source or gate of the transistor M6. One of the drains is electrically connected to the wiring V4, and the other is connected to the anode and the transistor of the light-emitting element EL. The transistor M7 is electrically connected to either the source or the drain of the transistor M7. The gate is electrically connected to the wiring MS, and the other of the source and the drain is electrically connected to the wiring OUT2. The cathode of the light-emitting element EL is electrically connected to the wiring V5. The other electrode is electrically connected to the other of the source or drain of the transistor M6.

[0061] A constant potential is supplied to the wiring V4 and the wiring V5. The transistor M can be set to a high potential and the cathode side can be set to a lower potential than the anode side. 5 is controlled by a signal supplied to the line GL to control the selection state of the second pixel circuit. The transistor M6 also functions as a select transistor for The transistor functions as a drive transistor that controls the current flowing through the light-emitting element EL in response to the applied potential. When the transistor M5 is in a conductive state, the potential supplied to the line SL is The luminance of the light emitted from the light-emitting element EL can be controlled according to the potential of the gate. The transistor M7 is controlled by a signal supplied to the wiring MS, and the transistor M6 and the light-emitting element It has a function of outputting the potential between the element EL and the element EL to the outside via the wiring OUT2.

[0062] The cathode of the light receiving element PD is electrically connected to the wiring V1, and the cathode of the light emitting element EL is The electrically connected wiring V5 can be in the same layer and have the same potential.

[0063] In the display device according to one embodiment of the present invention, a transistor included in the first pixel circuit and the second pixel circuit All of the transistors have a metal oxide (also called an oxide semiconductor) in the semiconductor layer where the channel is formed. It is preferable to use a transistor having an O The off-state current of the S transistor is extremely small, and the capacitance connected in series with the transistor In addition, the OS transistor can store electric charge for a long period of time. By using the same, the power consumption of the display device can be reduced.

[0064] Alternatively, in the display device according to one embodiment of the present invention, All of the transistors have silicon in the semiconductor layer where the channel is formed. It is preferable to use silicon transistors. In particular, the semiconductor layer is made of low-temperature polysilicon. Low Temperature Poly-Silicon (LTPS) It is preferable to use a transistor having a low-temperature-stable polysilicon (hereinafter also referred to as an LTPS transistor). LTPS transistors have high field-effect mobility and are capable of high-speed operation.

[0065] Furthermore, by using Si transistors such as LTPS transistors, This makes it easy to integrate the various circuits, which are composed of the above, on the same substrate as the display unit. The external circuitry mounted on the display device can be simplified, reducing component and mounting costs. It is possible.

[0066] Alternatively, in a display device according to one embodiment of the present invention, two types of transistors are provided in a first pixel circuit. Specifically, the first pixel circuit includes an OS transistor and an LTPS It is preferable that the semiconductor device has a semiconductor device according to the function required of the transistor. By changing the material of the conductor layer, the quality of the first pixel circuit can be improved, resulting in improved sensing and imaging accuracy. In this case, the second pixel circuit includes an OS transistor and an LTPS transistor. Either one or both of the transistors may be used.

[0067] Furthermore, if two types of transistors (e.g. OS transistor and LTPS transistor) are used in a pixel, Even if a LTPS transistor is used, the CMOS circuit can be constructed with This makes it easy to integrate the various circuits that are displayed on the same substrate as the display unit. This simplifies the external circuitry mounted on the device, reducing component and mounting costs. can be done.

[0068] Using metal oxides that have a wider band gap than silicon and a lower carrier density The transistor can realize an extremely small off-state current. The off-state current causes the charge stored in the capacitor connected in series with the transistor to be discharged for a long period of time. Therefore, it is possible to hold the capacitance C1 or C2 in series. The transistors M1, M2, and M5 are OS transistors. It is preferable to use

[0069] It is preferable to use a Si transistor for the transistor M3. Therefore, the image data can be read out at high speed.

[0070] The display unit includes a first pixel circuit having a light receiving element and a second pixel circuit having a light emitting element. The display device having the optical path is operable in a mode for displaying an image, a mode for capturing an image, and a mode for both displaying an image and capturing an image. In the image display mode, For example, a full-color image can be displayed using a light-emitting element. In the mode, for example, a light-emitting element is used to display an image for imaging (for example, a single color of green, a single color of blue, etc.). In the imaging mode, for example, a fingerprint can be captured. In addition, in a mode in which image display and image capture are performed simultaneously, for example, In some pixels, a light-emitting element is used to display an image to be captured, and a light-receiving element is used to capture the image. and in the remaining pixels, a full-color image can be displayed using light-emitting elements. .

[0071] In addition, in FIG. 2E and FIG. 2F, the transistors are shown as n-channel transistors. However, a p-channel transistor can also be used. The gate is not limited to a single gate, and may further have a back gate.

[0072] At a position overlapping with the light receiving element PD or the light emitting element EL, a transistor and / or a capacitor are provided. It is preferable to provide one or more layers having both. This allows the effective This reduces the required area and enables a high-definition display unit to be realized.

[0073] FIG. 3 is a circuit diagram illustrating the CDS circuit 41. The CDS circuit 41 is connected to the line SM. and a plurality of subpixels 32[j], 32[j+1], 32[j+2], etc. The CDS circuit 41 includes transistors M8 to M11, The subpixel 32 has a quantity C3. The above description (for example, FIG. 2E) can be used for the description of the subpixel 32. Therefore, the explanation will be omitted.

[0074] The other of the source and the drain of the transistor M4 of the subpixel 32 is connected to the line SM. The source or drain of the transistor M8 is electrically connected to one electrode of the capacitor C3. The other of the source and the drain of the transistor M8 is electrically connected to the wiring VIV. The gate of the transistor M8 is electrically connected to the wiring Vb1. The other electrode is connected to one of the source or drain of the transistor M9 and the other electrode is connected to the source or drain of the transistor M10. The other of the source and drain of the transistor M9 is electrically connected to the wiring V The gate of the transistor M9 is electrically connected to the line CL. One of the source and the drain of the transistor M10 is electrically connected to the wiring CDSV. The other of the source and drain of the transistor M10 is connected to the source of the transistor M11. The gate of the transistor M11 is electrically connected to the wiring MD. The other of the source and the drain of the transistor M11 is electrically connected to the wiring Vb2. It is electrically connected to the GND wiring.

[0075] The gate of the transistor M8 is supplied with a first bias potential supplied to the wiring Vb1. The gate of the transistor M11 is supplied with a second bias potential that is supplied to the wiring Vb2. Also, the transistor M9 is formed by the capacitance C3 and the gate of the transistor M9. The node NDC formed by the first resistor R1 can be initialized by a second initialization potential applied to the wiring VCL. Cut.

[0076] Next, as an example, the CDS circuit 41 reads out a light reception signal from the sub-pixel 32[j]. First, a method for the subpixel 32[j] to output a received light signal will be described. do.

[0077] A case where the subpixel 32[j] outputs an initialization signal for the subpixel 32[j] will be described. The transistor M1 is turned off when a signal is applied to the wiring TX. The transistor M2 is turned on when a signal is applied to the line RES. The first electrode of the subpixel 32[j] and the gate of the transistor M3 are connected to the first electrode of the subpixel 32[j] through a wiring V2. Next, a signal is applied to the wiring SE[j], and the transistor M4 Therefore, the transistor M3 is turned on by the A current corresponding to the first initialization potential is supplied to C through the transistor M4 and the wiring SM. It can be output to the DS circuit 41.

[0078] Next, when the sub-pixel 32[j] outputs the signal received by the light receiving element PD as a detection signal, The detection signal output from the subpixel 32[j] includes an offset signal The transistor M1 is turned on when a signal is applied to the wiring TX. The potential of one electrode of the capacitance C1 changes according to the amount of light received by the light receiving element PD. .

[0079] Next, the transistor M4 is turned on when a signal is applied to the line SE[j]. Therefore, the transistor M3 receives the current of the light receiving element PD from the gate of the transistor M3. A current according to the amount of received light is used as a detection signal, and the CDS is sent via transistor M4 and wiring SM. It can be output to circuit 41.

[0080] In addition, when the transistors M1 to M4 are n-channel transistors, When a high-level signal is applied to the transistor, it is turned on. When the transistors M1 to M4 are p-channel transistors, When a low signal is applied to the transistor, it is turned on.

[0081] The CDS circuit 41 includes the transistor M3 and the transistor M8 of the subpixel 32[j]. A first source follower circuit is formed using transistors M10 and M11. The first source follower circuit is formed by using a transistor. The potential applied to the gate of the transistor M3 is applied to the capacitor C3, and the second source follower circuit The potential applied to the gate of the transistor M10 is applied to the wiring MD. The lower circuit is electrically connected to the second source follower circuit via a capacitor C3.

[0082] As an example, transistor M1 is turned on and transistor M2 is turned off. This allows the subpixel 32[j] to output a detection signal. By this, the node NDC is supplied with a voltage from the wiring VCL via the transistor M9. Therefore, the capacitor C3 has a potential of 1 / 2V, which is set to the second initialization potential as a reference. The detection signal is held.

[0083] Next, transistor M9 transitions to an off state. As a result, the node NDC is in a floating state. Then, the transistor M1 is turned off, and The potential of the gate of the transistor M3 is set to the first The subpixel 32[j] is initialized by the initialization potential, and the subpixel 32[j] is supplied with an initialization signal by the CDS circuit 41. can.

[0084] Therefore, at node NDC, the amount of change in the initialization signal is extracted as a difference from the detection signal. The amount of change is output to the wiring MD via the second source follower circuit. The amount of change is expressed as follows: Since it is the difference between the detection signal and the initialization signal, the offset component of the sub-pixel 32[j] is removed. This corresponds to the removed received light signal.

[0085] Therefore, the CDS circuit 41 extracts the amount of change in the initialization signal from the detection signal as a difference. However, the detection signal and the initialization signal are not affected by common noise. Since the received light signal contains noise, the received light signal contains common noise. In this case, the noise can be removed by using the noise removal circuit 42.

[0086] FIG. 4A is a circuit diagram illustrating an example of the noise removal circuit 42. The noise removal circuit 42 The noise elimination circuit has a function of eliminating common noise from a received light signal that contains common noise. The path 42 includes switches SW1 to SW5, capacitors Cin1 to Cin3, The comparator circuit 51 includes a transistor 55, a comparator circuit 56, and a buffer circuit 57. The comparison circuit 56 includes input terminals IP1, IP2, IM1, IM2, and and an output terminal CO.

[0087] First, examples of switches that can be used for the switches SW1 to SW5 are shown in FIG. and shown in FIG. 4C.

[0088] The switch shown in FIG. 4B includes an input / output terminal 1, an input / output terminal 2, an input terminal 3, and an analog switch. The analog switch 58 has an input / output terminal 3a , an input / output terminal 4a, a control terminal 5a, and a control terminal 6a. The input / output terminal 2 is electrically connected to the input / output terminal 4a. The input terminal 3 is electrically connected to the control terminal 5a and the input terminal of the inverter circuit 59. The output terminal of the inverter circuit 59 is electrically connected to the control terminal 6a. There are.

[0089] The switch shown in FIG. 4C functions as a transfer switch. The input / output terminal 1, the input / output terminal 2, the input terminal 3, and the OS transistor 5A. The input terminal 1 is electrically connected to one of the source and drain of the OS transistor 5A. The input / output terminal 2 is electrically connected to the other of the source and the drain of the OS transistor 5A. Input terminal 3 is electrically connected to the gate of OS transistor 5A. The back gate of the OS transistor 5A is electrically connected to the wiring VBG. The back gate may be electrically connected to the gate. Therefore, the off-state current flowing between the input / output terminal 1 and the input / output terminal 2 can be reduced.

[0090] Returning now to the explanation of the noise removal circuit 42 in FIG. 4A, the noise removal circuit 42 shown in FIG. Therefore, the CDS circuit 41[m] is connected to the wiring MD[ m] and the input / output terminal 1 of the switch SW2. Also, the CDS circuit The path 41[m+1] is electrically connected to the input / output terminal 1 of the switch SW5 via the wiring MD[m+1]. are actively connected.

[0091] The input / output terminal 2 of the switch SW2 is connected to the input / output terminal 2 of the switch SW1 and the The input / output terminal 1 of the switch SW1 is electrically connected to the wiring COM2. The input / output terminal 1 of the switch SW3 is electrically connected to the wiring RAMP. The input / output terminal 2 of the switch SW3 is connected to the input / output terminal 2 of the switch SW4. The input / output terminal 1 of the switch SW4 is electrically connected to one electrode of the capacitor Cin2. , and is electrically connected to the wiring COM1. The input / output terminal 2 of the switch SW5 has a capacitance Ci It is electrically connected to one electrode of n3.

[0092] The input terminal 3 of the switch SW1 is electrically connected to the wiring AZIN1B. The input terminal 3 of the switch SW2 is electrically connected to the wiring AZIN1. The input terminal 3 is electrically connected to the wiring AZIN2. The input terminal 3 of the switch SW5 is electrically connected to the wiring AZIN2B. It is electrically connected to MODEB.

[0093] The other electrode of the capacitor Cin1 is connected to the input terminal IP1 of the comparison circuit 56 and the The source or drain of the transistor 51 is electrically connected to the The other of the drains is electrically connected to the input terminal IP2 of the comparison circuit 56 and the wiring COM3. The other electrode of the capacitor Cin2 is connected to the input terminal IM1 of the comparator circuit 56 and the The other electrode of the capacitor Cin3 is electrically connected to either the source or the drain. The transistor 52 is electrically connected to either the source or the drain of the transistor 5 The other of the source or drain of 2 is connected to an input terminal IM2 of the comparison circuit 56, One of the source or drain of the transistor 55 and one of the source or drain of the transistor 56 The wiring COM3 is connected to the other of the source and drain of the transistor 54. The transistor 55 is electrically connected to the other of the source and the drain. The other of the source and drain of 53 is connected to the output terminal CO of the comparison circuit 56 and the buffer circuit 57. The output terminal of the buffer circuit 57 is electrically connected to the input terminal of the It is electrically connected to the output wiring.

[0094] The gate of the transistor 51 is electrically connected to the wiring AZFB1. The gate of the transistor 52 is electrically connected to the wiring MODEB. The gate of the transistor 54 is electrically connected to the wiring AZFB1. The gate of the transistor 55 is electrically connected to the wiring MODE. are actively connected.

[0095] The node ND1 is connected to the input / output terminal 2 of the switch SW1, the input / output terminal 2 of the switch SW2, and The node ND1a is formed by connecting one electrode of the capacitance Cin1 and the other electrode of the capacitance Cin2. the other electrode of in1, one of the source and drain of the transistor 51, and the comparator circuit 5 The node ND2 is formed by connecting the input terminal IP1 of the switch SW3 to the input terminal IP2 of the switch SW4. The output terminal 2, the input / output terminal 2 of the switch SW4, and one electrode of the capacitor Cin2 are connected. The node ND2a is formed by connecting the other electrode of the capacitor Cin2 and the transistor 53 The input terminal IM1 of the comparison circuit 56 is connected to the source or drain of the The node ND3 is connected to the other of the source or drain of the transistor 52. one of the source or drain of the transistor 54, one of the source or drain of the transistor 55, and the input terminal IM2 of the comparison circuit 56 are connected.

[0096] The signal applied to the wiring AZIN1B is the inversion of the signal applied to the wiring AZIN1. The signal given to the wiring AZIN2B is a signal given to the wiring AZIN2. The signal applied to the MODEB line is the inverse signal of the signal applied to the MODE line. The signal applied to the line RAMP is high for a specified period. The signal given to the wiring RAMP changes stepwise from a high potential to a low potential. The change may be in a linear manner or in an analog manner.

[0097] Next, the overall operation of the display module will be described with reference to FIG. 5 is a flowchart illustrating an example of the operation of the module. The process includes steps ST01 to ST08.

[0098] Step ST01 is a step of forming a global shutter by using a plurality of sub-pixels 32 of a display device. In this step, the transistor M1 and the transistor M2 of the sub-pixel 32 are received (imaged) by the method. An OS transistor having a small off-state current can be used for the transistor M1 and the transistor M2. By using transistors, the display module receives light collectively and then reads out the received light signal. The deterioration of the received light signal can be reduced until the light is received.

[0099] Step ST02 is a step in which the read circuit 40 checks whether there is light reception data to be read. The read circuit 40 does not have any light reception data to read (read If it is determined that there are no more rows to be read (i.e., the read rows have been completed), the process proceeds to step ST01. Then, the global shutter system is used again to obtain the received light data. If it is determined that there is data to be read, the process proceeds to step ST03 and the read process is performed. cormorant.

[0100] Step ST03 is a step for reading out a signal (detection signal) generated when light is received. By using a CDS circuit, the variation of transistors used in pixels and the effect of wiring can be eliminated. However, the offset component caused by the parasitic capacitance of the detection signal can be removed. The common noise contained in the signal is not removed.

[0101] In step ST04, the CDS circuit 41 reads the signal at the time of initialization (initialization signal) row by row. This is the step where the CDS circuit 41 stores the detection signal when light is received and then outputs the initialization signal. The amount of change is detected by reading out, and the amount of change is output to the wiring MD as a light reception signal.

[0102] Step ST05 is a step for performing noise removal processing. The noise removal circuit 42 It is possible to remove the common noise contained in the received light signal. The received light signal is quantized by the counter circuit 43 and converted into first received light data.

[0103] In step ST06, the second initialization potential is applied to the CDS circuit 41 via the transistor M9. This is a step for reading out the signal during the period given. The minute is outputted as a CDS offset signal to line MD.

[0104] Step ST07 is a step for removing noise from the CDS offset signal. The CDS offset signal is quantized by a counter circuit 43 to obtain the CDS offset. The data is converted to text data.

[0105] Step ST08 detects a difference between the first light reception data and the CDS offset data. After step ST08, step ST The process proceeds to 02, where it is confirmed whether there is light reception data to be read by the read circuit 40.

[0106] FIG. 6 is a timing chart illustrating an example of the operation of the read circuit 40. In FIG.

[0107] In FIG. 6, a readout circuit 40 reads out the sub-pixels 32 in the jth row and the j+1th row of the display device. First, during the light receiving period, the display device is The multiple sub-pixels 32 corresponding to each other receive light collectively using a global shutter system. A high-level signal is applied to X, and a signal SP2 is applied to the wires SE, RES, and CL. In Figure 6, the jth row's light receiving signal is read out. The operation will be described.

[0108] Next, the readout circuit 40 reads out the light reception signals from the sub-pixels 32 in the j-th row. The period during which the CDS circuit 41 reads out the received light signal is defined as a period CDS[j]. The period during which the circuit 42 removes the common noise and performs quantization is defined as the period TOUT[j]. For the sake of clarity, the CDS circuit 41[m] will be used as an example.

[0109] First, we will explain the period CDS[j]. This will be described with reference to the CDS circuit 41[m] shown in FIG.

[0110] In the period CDS[j], a signal of “H” is first given to the line SE[j], The pixel 32 supplies a detection signal to the CDS circuit 41[m]. During this period, the line CL is connected to A signal of “H” is given, and the node NDC is initialized (fixed) at the second initialization potential. Therefore, the detection signal is held in the capacitance C3 of the CDS circuit 41[m]. After the detection signal is held in the capacitor C3, a low signal is applied to the line CL. This puts the node NDC into a floating state.

[0111] Next, a signal of “H” is applied to the line RES[j], so that the subpixel 32 becomes the first initial pixel. The sub-pixel 32 is initialized with the initial potential. A light receiving signal (initialization signal) in the initialized state is applied to the sub-pixel 32. At this time, the node NDC is in a floating state, so the detection signal and the initialization The difference between the signals is output to the wiring MD as the light receiving signal. The selection signal provided to ES[j] is preferably generated by the signal SP2. In other words, the selection signal given to the wiring SE[j] and the wiring RES[j] is the signal SP2. The signal SP2 controls the operation timing of the noise removal circuit 42. Used as a signal.

[0112] Next, the period TOUT[j] will be described. For this purpose, reference will be made to the noise removal circuit 42[m] shown in FIG.

[0113] The period TOUT has periods TB1 and TB2. Here, the time T10 is the time when the signal This indicates the time when SP2 changes to “L”. Period TB1 starts from time T11, which is after time T10. It is preferable to start from time T11. Note that time T11 may be the same as time T10.

[0114] The period TB1 starts from time T11. During the period TB1, the noise removal circuit 42[m] This is the initialization period. The lines AZIN1 and AZIN2 change to "L". At the same time, the wires AZIN1B and AZIN1C are turned off. When the wiring AZIN2B and AZIN3B change to "H", the switches SW1 and SW4 Therefore, the node ND1 has a signal connected to the wiring COM2 via the switch SW1. A potential VCOM2 is applied to the node ND2 via a switch SW4. The potential VCOM1 is applied to the wiring COM1.

[0115] At time T11, the wiring AZFB1 and the wiring AZFB2 change to “H”. As a result, the transistors 51, 53, and 54 are turned on. Therefore, the node ND1a receives the signal supplied to the wiring COM3 via the transistor 51. A potential VCOM3 is applied to the node ND3. A potential VCOM3 is applied to the node ND2a. The potential output from the output terminal CO of the comparison circuit 56 is applied via a resistor 53. A "L" signal is applied to the MODE line, and a "H" signal is applied to the MODEB line. Therefore, the switch SW5 and the transistor 52 are in the on state.

[0116] By providing the period TB1, the input terminals IP1, IP2, and A potential VCOM3 is applied to the input terminal IM2. Further, the input terminal IM1 is The output potential of the output terminal CO is applied to the comparator circuit 56. By fixing the value, the comparator circuit 56 can be said to be in an initialized state.

[0117] At time T12, the wiring AZFB1 and the wiring AZFB2 change to "L". Then, at time T13, the wiring AZIN1 and the wiring AZIN2 change to “H”. That is, after the comparison circuit 56 is initialized, the node ND1 is connected to the line M via the switch SW2. D[m], and node ND2 is connected to wiring RAMP via switch SW3. do.

[0118] By going through the above procedure, the change in the signal of the wiring MD[m] is input via the capacitance Cin1. The signal change on the wiring MD[m+1] can be applied to the input terminal IP1, and the capacitance Cin3 The first input signal MD[m] can be input to the input terminal IM2 via the wiring MD[m]. The received light signal is given through the adjacent wiring MD[m+1] in the same manner as the second received light signal. Common noise is included.

[0119] The period TB2 is a period during which the comparator circuit 56 removes the common noise. Thus, the ramp signal applied to the wiring RAMP becomes a maximum value at time T11 and A comparison signal having a constant change amount that starts at time T4 and reaches a minimum value at time T16. However, the signal given to the wiring RAMP is not limited to this, and may be a signal that changes in a stepwise manner. However, the ramp signal may be a time-varying signal or an analog signal. It is preferable that the period from time T11 to time T14 is a controlled signal. The period from time T3 to time T14 can be provided as necessary.

[0120] The comparator circuit 56 compares the potential applied to the input terminal IP1 with the potential applied to the input terminal IM1. and a potential applied to the input terminal IP2 and a potential applied to the input terminal I The second composite current is generated using the potential applied to M2. The magnitude of the composite current is controlled to be the same as that of the second composite current.

[0121] As an example, a first sum generated by applying a first light receiving signal to an input terminal IP1 is The composite current is a second composite current generated by applying a second light receiving signal to the input terminal IM2. Therefore, the current in the first received light signal is controlled to be equal to the current in the second received light signal. The common noise contained in the second light receiving signal has the same noise component as the common noise contained in the second light receiving signal, so they are canceled out. Therefore, the first received light signal including the common noise given through the wiring MD[m] is is removed by using the common noise contained in the adjacent wiring MD[m+1].

[0122] The first light receiving signal from which the common noise has been removed is output as a signal Co via a buffer circuit 57. ut is given to the counter circuit 43[m]. As shown in FIG. The signal Cout output from 2 is a signal that is inverted between time T14 and time T16. Here, the time when the signal Cout is inverted is T15. Note that the signal Cout is a binary Since the signal Cout is a quantized signal, the counter circuit 43[m] can quantize the period of the signal Cout. Therefore, the noise elimination circuit 42 and the counter circuit 43 are used to perform the synchronization. A Gul-slope type A / D conversion circuit can be constructed. The signal Cout is output from a counter circuit. The signal is converted to data Dout by quantization via a line 43[m]. can be easily handled by a processor, control circuit, or image processing device. When the signal Cout is output as an analog value, a flash type A / D conversion circuit is used. etc. may also be used.

[0123] FIG. 7 is a circuit diagram illustrating the comparison circuit 56 in detail. The amplifier circuit 70 includes a transistor 71 and a level shifter circuit 80. to transistor 7k, capacitance C4, input terminal IP1, input terminal IP2, input terminal IM1, and and an input terminal IM2. The transistors 71 to 7e are p-channel It is preferable to use transistors having a capacitance of n It is preferable to use a transistor of the channel type.

[0124] The level shifter circuit 80 includes transistors 81 to 8a and an output terminal CO. do.

[0125] The amplifier circuit 70 includes a wiring VDD1, a wiring VBP1, and a wiring VBP2. In addition, the level shifter circuit 80 includes a wiring VDD2, a wiring STBY, and a wiring VBN1. The amplifier circuit 70 and the level shifter circuit 80 are connected to a wiring VSS and a wiring Share VBN2.

[0126] The wiring VDD1 is connected to the transistors 71, 73, 75, The transistor 77 is electrically connected to either the source or the drain of the transistor 79. The wiring VDD2 is connected to one of the sources or drains of the transistors 81 to 84. The wiring VSS is electrically connected to the transistor 7g, the transistor 7i, The transistor 7k, one of the sources or drains of the transistors 86 to 89, are electrically connected.

[0127] The wiring VBP1 is connected to the transistors 71, 73, 75, The wiring VBP2 is electrically connected to the gate of the transistor 77 and the gate of the transistor 79. , transistor 72, transistor 74, transistor 76, transistor 78, and The wiring VBN2 is electrically connected to the gate of the transistor 7a. f, the gates of transistors 7h, 7j, and 85 are electrically connected is connected.

[0128] The input terminal IM1 is electrically connected to the gate of the transistor 7b. P1 is electrically connected to the gate of the transistor 7c. The input terminal IP2 is electrically connected to the gate of the transistor 7e. The gate of the transistor is electrically connected to the gate of the transistor.

[0129] The other of the source or drain of the transistor 71 is connected to the source or drain of the transistor 72. The other of the source and drain of the transistor 72 is electrically connected to , electrically connected to one of the sources or drains of the transistors 7b and 7c It has been done.

[0130] The other of the source or drain of the transistor 73 is connected to the source or drain of the transistor 74. The other of the source and drain of the transistor 74 is electrically connected to , electrically connected to one of the sources or drains of the transistors 7d and 7e It has been done.

[0131] The other of the source or drain of the transistor 75 is connected to the source or drain of the transistor 76. The other of the source and drain of the transistor 76 is electrically connected to , one of the source or drain of the transistor 7f, the transistor 7g, and the transistor The other of the source and drain of the transistor 7f is electrically connected to the gate of the transistor 7i. The other of the source and drain of the transistor 7g, the transistor 7c and the transistor The transistor 7e is electrically connected to the other of the source and drain of the transistor 7e.

[0132] The other of the source or drain of the transistor 77 is connected to the source or drain of the transistor 78. The other of the source and drain of the transistor 78 is electrically connected to , one of the source or drain of the transistor 7h, the gate of the transistor 7k, and the capacitor The source or drain of the transistor 7h is electrically connected to one electrode of the capacitor C4. The other of the two is the other of the source or drain of the transistor 7i, the transistor 7b and the transistor The other of the source and drain of the capacitor C4 is electrically connected to the other of the source and drain of the transistor 7d. The electrode is electrically connected to the wiring VSS.

[0133] The other of the source and drain of the transistor 79 is connected to the source or drain of the transistor 7a. The other of the source or drain of the transistor 7a is electrically connected to , the source or drain of the transistor 7j and the gate of the transistor 87 are electrically connected The other of the source and drain of the transistor 7j is connected to the The other of the source and drain of k is electrically connected to the other of the source and drain of k.

[0134] The other of the source or drain of the transistor 81 is connected to the source or drain of the transistor 85. and the gates of the transistors 81 to 83. The other of the source or drain of the transistor 85 is connected to the source or drain of the transistor 86. The wiring VBN1 is electrically connected to the gate of the transistor 86. The connector is electrically connected to the

[0135] The other of the source or drain of the transistor 82 is connected to the source or drain of the transistor 87. The other input is electrically connected to the gate of the transistor 88.

[0136] The other of the source or drain of the transistor 83 is connected to the source or drain of the transistor 88. the other input of the transistor 8a, the source or drain of the transistor 84, It is electrically connected to the gate of the transistor 89 .

[0137] The other of the source or drain of the transistor 84 is connected to the source or drain of the transistor 89. The source or drain of the transistor 8a is electrically connected to the other input of the transistor 8a and the output terminal CO. The other of the drains is electrically connected to a wiring VSS. It is electrically connected to the gate of 8a.

[0138] The magnitude of the current that the transistor 7c passes depending on the potential applied to the input terminal IP1 and the The magnitude of the current that the transistor 7b passes due to the potential applied to the input terminal IM1 is It is determined by transistor 71 and transistor 72. In other words, The magnitude of the first combined current flowing through transistors 71 and 72 is given to input terminal IP1. The current that the transistor 7c passes depends on the potential applied to the input terminal IM1. Therefore, the magnitude of the current is equal to the current flowing through transistor 7b.

[0139] Similarly, a second composite current flows through transistors 73 and 74 at the input terminal The current that the transistor 7e flows due to the potential applied to the input terminal IP2 is The magnitude of the current obtained by adding the current passed by transistor 7d is equal to that of the obtained potential.

[0140] However, the same potential is applied to the gates of the transistors 71 and 73. The same potential is applied to the gates of transistors 72 and 74. The transistor 71 and the transistor 73 are in a differential input relationship, and the transistor 72 and The input is a differential input to the input terminal 74. Therefore, the current value of the first composite current is The current value is the same as the current generated by the transistor 71. Here, the channel length and the channel width of the transistor 71 are It is preferable that the channel length and the channel width are the same as those of the transistor 73. The channel length and width of the transistor 72 are equal to the channel length and width of the transistor 74. It is preferably the same as the channel width.

[0141] As an example, the first light receiving signal applied to the input terminal IP1 may be greatly affected by common noise. When the input voltage Vcc is increased, the current flowing through the transistor 7c increases. When the second light receiving signal obtained becomes large due to the effect of the common noise, the transistor 7 The current flowing through d increases. The potential VCOM3 is applied to the input terminal IP2. A ramp signal is applied to the input terminal IM1. It is assumed that the common noise is not included.

[0142] Since the magnitude of the first composite current and the magnitude of the second composite current do not change, the common noise Therefore, the effects of the noise of the transistors 7c and 7e are cancelled out. The sum of the currents flowing through the transistors 7b and 7c can be used as the first light receiving signal. The sum of the currents flowing through the transistors 7a and 7b can be used as a comparison signal based on a ramp signal. Therefore, the amplifier circuit 70 can function as a comparison circuit.

[0143] The level shifter circuit 80 receives the output voltage of the amplifier circuit 70 via a wiring VDD2. The amplitude of the potential can be converted to the amplitude of the potential.

[0144] Therefore, the first received light signal including the common noise given through the wiring MD[m] is Therefore, the common noise contained in the adjacent wiring MD[m+1] can be removed by using the common noise. Cut.

[0145] As described above, according to one aspect of the present invention, a display device having a display function and a light receiving function It is possible to provide a readout circuit that reads out a received light signal from the semiconductor memory device. If this is the case, it is possible to provide a noise removal circuit that reduces common noise caused by the display function. Therefore, the display module detects touches and the like using the light receiving function of the display device. In addition, the display module can emit light by utilizing the light emission function of the display function. It can be used as a proximity sensor to detect reflected light. In this case, the display module may be equipped with an authentication function such as a fingerprint or palm print.

[0146] This embodiment mode can be appropriately combined with other embodiment modes. In the case where a plurality of configuration examples are shown in one embodiment, the configuration examples may be appropriately combined. It is possible to combine them.

[0147] (Embodiment 2) In this embodiment, a display device according to one embodiment of the present invention will be described with reference to FIGS. do.

[0148] The display device of this embodiment is preferably used in the display section of the device described in the first embodiment. It is possible.

[0149] The display portion of the display device of one embodiment of the present invention has a function of displaying an image using a light-emitting element. Furthermore, the display unit has one or both of an imaging function and a sensing function.

[0150] A display device according to one embodiment of the present invention includes a light-receiving element and a light-emitting element. Such a display device includes a light receiving / emitting element (also called a light receiving / emitting device) and a light emitting element.

[0151] First, a display device having a light receiving element and a light emitting element will be described.

[0152] A display device according to one embodiment of the present invention includes a light-receiving element and a light-emitting element in a display portion. In the display device of the present invention, light-emitting elements are arranged in a matrix on a display section, The display unit can display an image. The display unit has light receiving elements arranged in a matrix. The display unit has one or both of an imaging function and a sensing function. It can be used as an image sensor or a touch sensor. That is, it detects light on the display unit. This allows the system to capture images and detect the proximity or contact of objects (such as fingers or pens). Furthermore, in the display device of one embodiment of the present invention, a light-emitting element is used as a light source of a sensor. Therefore, it is not necessary to provide a light receiving section and a light source separately from the display device, and the The number of parts in the child devices can be reduced.

[0153] In the display device of one embodiment of the present invention, light emitted from a light-emitting element included in a display portion is reflected ( When the light is reflected (or scattered), the light-receiving element detects the reflected light (or scattered light), so it can detect the reflected light (or scattered light) even in dark places. It is possible to capture images and detect touch operations (contact or proximity) anywhere.

[0154] A display device according to one embodiment of the present invention has a function of displaying an image using a light-emitting element. The light emitting element functions as a display element (also called a display device).

[0155] The light-emitting element is an OLED (Organic Light Emitting Diode). ode) and QLED(Quantum-dot Light Emitting Dio) It is preferable to use an EL element (also called an EL device) such as The luminescent materials that emit light include fluorescent materials and phosphorescent materials. , inorganic compounds (quantum dot materials, etc.), and materials that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence (Thermally Activated Delayed Fluorescenc e:TADF) materials) as light-emitting elements. Alternatively, an LED such as a Light Emitting Diode can be used.

[0156] A display device according to one embodiment of the present invention has a function of detecting light using a light-receiving element.

[0157] When the light receiving element is used as an image sensor, the display device captures an image using the light receiving element. For example, the display device of the present embodiment can be used as a scanner. Cut.

[0158] For example, an image sensor is used to acquire data related to biometric information such as fingerprints and palm prints. In other words, a biometric authentication sensor can be built into the display device. By incorporating a biometric authentication sensor in the device, a biometric authentication sensor can be provided separately from the display device. Compared to conventional methods, the number of parts in electronic devices can be reduced, making it possible to make electronic devices smaller and lighter. be.

[0159] In addition, when the light receiving element is used as a touch sensor, the display device detects the object by using the light receiving element. The proximity or contact of the sensor can be detected.

[0160] As the light receiving element, for example, a pn type or pin type photodiode can be used. The light receiving element acts as a photoelectric conversion element that detects the light incident on the light receiving element and generates an electric charge. The amount of charge generated by the light receiving element is determined based on the amount of light incident on the element.

[0161] In particular, an organic photodiode having a layer containing an organic compound is used as the light receiving element. It is preferable that the organic photodiode is thin, lightweight, and large in area. In addition, since there is a high degree of freedom in shape and design, the display device can be applied to a variety of display devices.

[0162] In one embodiment of the present invention, an organic EL element is used as the light-emitting element, and an organic photodiode is used as the light-receiving element. The organic EL element and the organic photodiode are formed on the same substrate. Therefore, it is possible to incorporate an organic photodiode into a display device using an organic EL element. It can be stored.

[0163] If we try to create all the layers that make up an organic EL element and an organic photodiode separately, The number of film formation processes is very large. Organic photodiodes can be made with the same structure as organic EL elements. Since there are many layers, layers that can be made to have a common structure are deposited together to suppress the increase in deposition processes. It is possible.

[0164] For example, one of the pair of electrodes (common electrode) may be a layer common to the light receiving element and the light emitting element. In addition, for example, a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer can be It is preferable that at least one of the layers is a layer common to the light receiving element and the light emitting element. For example, a light receiving element and a light emitting element may be the same except that the light receiving element has an active layer and the light emitting element has a light emitting layer. In other words, the light-emitting layer of the light-emitting element can be replaced with an active layer. In this way, the light receiving element and the light emitting element can be fabricated using only the same material. By providing the layer, the number of film formations and the number of masks can be reduced, and the manufacturing process of the display device and In addition, the manufacturing cost can be reduced by using the existing manufacturing apparatus and manufacturing method of the display device. By using this, a display device having a light receiving element can be manufactured.

[0165] The layers shared by the light receiving element and the light emitting element have functions in both the light emitting element and the light receiving element. In this specification, the function of the light-emitting element may be different from that of the light-emitting element. For example, a hole injection layer functions as a hole injection layer in a light-emitting device and is a receiving layer. Similarly, the electron injection layer functions as a hole transport layer in the light-emitting device. It functions as a electron injection layer in the light-receiving element and as an electron transport layer in the light-receiving element. The layers shared by the light-emitting elements have the same functions as the light-emitting elements and the light-receiving elements. The hole transport layer may be present in both the light emitting device and the light receiving device. In both the light-emitting device and the light-receiving device, the electron transport layer functions as an electron transport layer. It functions as such.

[0166] Next, a display device having light emitting and receiving elements and a light emitting element will be described.

[0167] In the display device according to one embodiment of the present invention, the subpixel exhibiting any color is The sub-pixels that exhibit the other colors have light-emitting and receiving elements. The element has both a function of emitting light (light-emitting function) and a function of receiving light (light-receiving function). For example, if a pixel has three subpixels, a red subpixel, a green subpixel, and a blue subpixel, In this case, at least one subpixel has a light emitting / receiving element, and the other subpixels have a light emitting element. Therefore, a display portion of a display device according to one embodiment of the present invention includes a light-emitting element and a light-emitting element. It has the function of displaying images using both.

[0168] The light receiving / emitting element functions as both a light emitting element and a light receiving element, thereby increasing the number of sub-pixels included in a pixel. This allows the pixel to have a light receiving function without increasing the aperture ratio of the pixel (each sub-pixel). While maintaining the aperture ratio of the original display and the definition of the display device, the display unit of the display device is provided with an imaging function. One or both of the functions of the sensor and the sensor-detecting function can be added. In the display device of the embodiment, a sub-pixel having a light receiving element is provided in addition to the sub-pixel having a light emitting element. In comparison with the conventional method, the aperture ratio of the pixel can be increased and high definition can be easily achieved.

[0169] In a display device according to one embodiment of the present invention, light-emitting and light-emitting elements are arranged in a matrix in a display portion. The display unit is configured to display an image. The display device according to one embodiment of the present invention can be used as a sensor or a touch sensor. Therefore, the light receiving section and the light source are not required to be provided separately from the display device. This eliminates the need for a power supply, and reduces the number of parts in the electronic device.

[0170] In the display device of one embodiment of the present invention, light emitted from a light-emitting element included in a display portion is reflected ( When the light is reflected (or scattered), the light-receiving element detects the reflected light (or scattered light). It is possible to capture images and detect touch operations (contact or proximity) regardless of the location.

[0171] The light emitting / receiving element can be made by combining an organic EL element and an organic photodiode. For example, an active layer of an organic photodiode can be added to the stacked structure of an organic EL element. In addition, an organic EL element and an organic photodiode can be fabricated. The light-emitting element is made by combining layers that can be used in common with organic EL elements. By forming a film, an increase in the number of film formation steps can be suppressed.

[0172] For example, one of the pair of electrodes (common electrode) is a layer common to the light emitting / receiving element and the light emitting element. In addition, for example, a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer can be formed. It is preferable that at least one of the layers is a layer common to the light emitting / receiving element and the light emitting element. For example, the light receiving / emitting element and the light emitting element have the same configuration except for the presence or absence of an active layer in the light receiving element. In other words, a light-receiving / light-emitting element can be fabricated simply by adding an active layer for a light-receiving element to a light-emitting element. In this way, the light emitting / receiving element and the light emitting element have a common layer, The number of film formations and masks can be reduced, reducing the manufacturing process and manufacturing costs of display devices. In addition, the light emitting / receiving element can be manufactured by using existing manufacturing equipment and methods for a display device. It is possible to manufacture a display device having the above structure.

[0173] The layers of the light emitting / receiving element may function as a light receiving element or as a light emitting element. In this specification, the function of the light emitting / receiving element may be different. The components are named based on their functions when they function as light-emitting elements. The hole injection layer functions as a hole injection layer when the light emitting / receiving element functions as a light emitting element, and When the light-emitting element functions as a light-receiving element, it functions as a hole transport layer. When the light emitting / receiving element functions as a light emitting element, the electron injection layer functions as an electron injection layer and When the element functions as a light receiving element, it functions as an electron transport layer. The layer having the function of the light receiving / emitting element is different when the light receiving / emitting element functions as a light receiving element and when the light emitting element functions as a light emitting element. In some cases, the hole transport layer may be the same in both the light-emitting element and the light-receiving element. Even when the layer functions as a hole transport layer, the layer functions as a hole transport layer, and the electron transport layer functions as a light-emitting element and In either case of functioning as a light receiving element, the layer functions as an electron transport layer.

[0174] The display device of this embodiment has a function of displaying an image using light-emitting elements and light-receiving and light-emitting elements. In other words, the light emitting element and the light emitting / receiving element function as a display element.

[0175] The display device of this embodiment has a function of detecting light by using a light receiving and emitting element. The element can detect light having a shorter wavelength than the light emitted by the light emitting / receiving element itself.

[0176] When the light emitting / receiving element is used in an image sensor, the display device of the present embodiment uses the light emitting / receiving element as For example, the display device of the present embodiment can be used as a scanner. It can be used as such.

[0177] In addition, when the light emitting / receiving element is used as a touch sensor, the display device of the present embodiment The device can be used to detect the proximity or contact of an object.

[0178] The light emitting / receiving element acts as a photoelectric conversion element that detects light incident on the light emitting / receiving element and generates an electric charge. The amount of charge generated by the light-emitting / receiving element is determined based on the amount of light incident on the element. .

[0179] The light receiving / emitting element can be fabricated by adding an active layer of a light receiving element to the above-mentioned light emitting element. This can be done.

[0180] The light emitting / receiving element uses, for example, the active layer of a pn-type or pin-type photodiode. It is possible.

[0181] In particular, the light emitting / receiving element is provided with an active layer of an organic photodiode having a layer containing an organic compound. It is preferable to use an organic photodiode. In addition, since there is a high degree of freedom in shape and design, the liquid crystal display device can be applied to a variety of display devices.

[0182] The display device of one embodiment of the present invention will be described more specifically below with reference to the drawings.

[0183] [Display device] 8A to 8D and 8F each show a cross-sectional view of a display device according to one embodiment of the present invention.

[0184] The display device 200A shown in FIG. 8A has a light receiving element between a substrate 201 and a substrate 209. The light-emitting element 202 includes a layer 203 having a light-emitting element, a functional layer 205, and a layer 207 having a light-emitting element.

[0185] The display device 200A emits red (R), green (G), and red (C) lights from a layer 207 having light-emitting elements. This configuration emits blue (B) light.

[0186] The light receiving elements included in the layer 203 having the light receiving elements receive light incident from the outside of the display device 200A. The light emitted from the detector can be detected.

[0187] A display device 200B shown in FIG. 8B has a light emitting / receiving element between a substrate 201 and a substrate 209. The light-emitting device includes a layer 204 having a light-emitting element, a functional layer 205, and a layer 207 having a light-emitting element.

[0188] The display device 200B emits green (G) light and blue (B) light from a layer 207 having light-emitting elements. The light of the first color is emitted from the layer 203 having the light receiving and emitting elements, and red (R) light is emitted from the layer 204 having the light receiving and emitting elements. In the display device of one embodiment of the present invention, light emitted from the layer 204 having the light-emitting element is The color of the light emitted from the layer 207 having the light emitting elements is not limited to red. The combination is not limited to blue.

[0189] The light emitting / receiving elements included in the layer 204 having the light emitting / receiving elements receive light from the outside of the display device 200B. The light receiving / emitting element can detect the light emitted from the light receiving / emitting element, for example, green (G) light and blue (B) light. One or both of the lights in (B) can be detected.

[0190] The functional layer 205 includes a circuit for driving the light receiving element or the light receiving / emitting element, and a circuit for driving the light emitting element. The functional layer 205 includes a switch, a transistor, a capacitor, a resistor, a wiring, a terminal, and a The light emitting element and the light receiving element are driven by a passive matrix method. In this case, the switch and the transistor may not be provided.

[0191] The display device according to one embodiment of the present invention has a function of detecting an object such as a finger touching the display device. For example, as shown in FIG. 8C, The light emitted by the light emitting element in the layer 207 having the elements is guided to the display device 200A by a finger 2 When the light ray 02 is reflected, the light receiving element in the layer 203 having the light receiving element detects the reflected light. This makes it possible to detect that the finger 202 has touched the display device 200A. In the display device 200B, the light emitted by the light emitting element in the layer 207 having the light emitting element is The light is reflected by a finger touching the display device 200B, and is incident on the layer 204 having the light emitting / receiving elements. The light receiving / emitting element can detect the reflected light. The following describes an example in which light is reflected by an object. However, light can also be scattered by the object. There are also cases where this is the case.

[0192] The display device according to one embodiment of the present invention is in close proximity to (in contact with) the display device, as shown in FIG. 8D. The sensor may have a function of detecting or capturing an image of an object (not shown).

[0193] The display device according to one embodiment of the present invention may have a function of detecting a fingerprint of a finger 202. FIG. 8E is an image diagram of an image captured by a display device of one embodiment of the present invention. Within an image range 263, the outline of the finger 202 is indicated by a dashed line, and the outline of the contact portion 261 is indicated by a dashed line. In the contact portion 261, the amount of light incident on the light receiving element (or the light receiving / emitting element) varies. This allows a high-contrast image of the fingerprint 262 to be captured.

[0194] The display device of one embodiment of the present invention can also function as a pen tablet. In F, the tip of the stylus 208 is in contact with the substrate 209 and slid in the direction of the dashed arrow. This shows how the device is being used.

[0195] As shown in FIG. 8F, the tip of the stylus 208 and the scattering light scattered at the contact surface of the substrate 209 are scattered. Diffuse light is incident on a light receiving element (or a light receiving / emitting element) located in the area overlapping the contact surface. In this way, the position of the tip of the stylus 208 can be detected with high accuracy.

[0196] FIG. 8G shows an example of a trajectory 266 of a stylus 208 detected by a display device according to one embodiment of the present invention. The display device according to one embodiment of the present invention detects the object such as the stylus 208 with high position accuracy. Since it is possible to detect the position of the body, it is possible to perform high-definition drawing in drawing applications, etc. It is also possible to use a capacitive touch sensor or an electromagnetic induction touch pen. Unlike the case where a sensor is used, position detection is possible even for highly insulating objects, so The material of the tip of the Iras 208 does not matter, and it can be used with various writing instruments (e.g. brushes, glass pens, feather pens, etc.). It is also possible to use a

[0197] 9A to 9D show a sub-pixel having a light emitting element, and a sub-pixel having a light receiving / emitting element. 1 shows an example of a pixel having one

[0198] The pixel shown in FIG. 9A is arranged in a stripe pattern, emits red light, and has a light receiving function. a subpixel (SR) that exhibits green light, a subpixel (G) that exhibits blue light, In a display device in which a pixel is composed of three sub-pixels of R, G, and B, By replacing the light-emitting element used in the pixel with a light-receiving element, a display device with a light-receiving function in the pixel can be realized. A device can be fabricated.

[0199] The pixel shown in FIG. 9B has a subpixel (SR) that emits red light and has a light receiving function, The pixel has a subpixel (G) that emits red light and a subpixel (B) that emits blue light. The subpixel (G) and the subpixel (B) are arranged in a different column. (B) and (B) are alternately arranged in the same column, one in the odd rows and the other in the even rows. Note that the sub-pixels arranged in a column different from the sub-pixels of other colors are not limited to red (R), It may be green (G) or blue (B).

[0200] The pixel shown in FIG. 9C is arranged in a matrix, emits red light, and has a light receiving function. A sub-pixel (SR) that emits green light, a sub-pixel (G) that emits blue light, and a sub-pixel (B) that emits blue light. , and a sub-pixel (X) that exhibits light other than R, G, and B. In a display device having four sub-pixels, the light-emitting element used in the R sub-pixel is a light-receiving element. By replacing the above with the above, a display device having a light receiving function in the pixel can be manufactured.

[0201] FIG. 9D shows two pixels, with three sub-pixels enclosed by dotted lines forming one pixel. The pixel shown in FIG. 9D is a sub-pixel that emits red light and has a light receiving function. The pixel has a subpixel (SR) that emits green light, a subpixel (G) that emits blue light, and a subpixel (B) that emits blue light. In the pixel on the left shown in FIG. 9D, the subpixel (G) is arranged in the same row as the subpixel (SR), Subpixel (B) is arranged in the same column as subpixel (SR). In the right pixel shown in FIG. 9D, The subpixel (G) is arranged in the same row as the subpixel (SR), and the subpixel ( In the pixel layout shown in FIG. 9D, both odd and even rows have Even in the case of the pixel array, the sub-pixels (SR), (G), and (B) are repeatedly arranged. In addition, in each column, sub-pixels of different colors are arranged in odd-numbered rows and even-numbered rows.

[0202] FIG. 9E shows four pixels to which the Pentile array has been applied, with two adjacent pixels The pixel has sub-pixels that emit two different colors of light. The shape indicates the top shape of a light-emitting element or a light-receiving / light-emitting element of the subpixel. is a modified example of the pixel array shown in FIG. 9E.

[0203] The upper left pixel and the lower right pixel shown in FIG. 9E are sub-pixels that emit red light and have a light receiving function. The pixel at the bottom left in FIG. 9E has a pixel (SR) and a sub-pixel (G) that emits green light. The upper right pixel is a sub-pixel (G) that emits green light and a sub-pixel (B) that emits blue light. has.

[0204] The upper left pixel and the lower right pixel shown in FIG. 9F are sub-pixels that emit red light and have a light receiving function. The pixel in the lower left corner shown in FIG. 9F has a pixel (SR) that emits green light and a sub-pixel (G) that emits green light. The upper right pixel is a sub-pixel (SR) that emits red light and has a light receiving function, and the lower right pixel is a sub-pixel (SR) that emits blue light and has a light receiving function. The pixel has a subpixel (B) that exhibits light of

[0205] In FIG. 9E, each pixel is provided with a subpixel (G) that emits green light. In the LCD, each pixel is provided with a sub-pixel (SR) that emits red light and has a light receiving function. Since each pixel is provided with a sub-pixel having a light receiving function, in the configuration shown in FIG. 9E, it is possible to perform imaging with higher resolution. The accuracy of biometric authentication can be improved.

[0206] The top surface shape of the light emitting element and the light receiving / emitting element is not particularly limited, and may be a circle, an ellipse, a polygon, an angle, etc. The top shape of the light-emitting element of the sub-pixel (G) can be, for example, a round polygon. FIG. 9E shows an example of a circular shape, and FIG. 9F shows an example of a square shape. The top shapes of the light emitting and receiving elements may be different from each other, and may be the same for some or all of the colors. may be also possible.

[0207] The aperture ratios of the sub-pixels of each color may be different from each other, or may be the same for some or all of the colors. For example, a sub-pixel provided in each pixel (sub-pixel (G) in FIG. 9E, sub-pixel (G) in FIG. 9 The aperture ratio of the sub-pixel (SR) in F may be smaller than the aperture ratios of the sub-pixels of other colors. .

[0208] FIG. 9G is a modified example of the pixel array shown in FIG. 9F. Specifically, the configuration of FIG. This is obtained by rotating the configuration of F by 45°. In Fig. 9F, two sub-pixels form one image. However, as shown in FIG. 9G, one pixel is composed of four sub-pixels. It can also be considered that pixels are configured.

[0209] In FIG. 9G, it is explained that one pixel is composed of four sub-pixels surrounded by dotted lines. Each pixel consists of two sub-pixels (SR), one sub-pixel (G), and one sub-pixel (C). In this way, one pixel has a plurality of sub-pixels having a light receiving function. This allows for high-resolution imaging, thus improving the accuracy of biometric authentication. For example, the resolution of the image can be set to the root of twice the resolution of the display. .

[0210] The display device to which the configuration shown in FIG. 9F or FIG. 9G is applied has p (p is an integer of 2 or more) A first light emitting element, q (q is an integer of 2 or more) second light emitting elements, and r (r is greater than p) The element has a light emitting / receiving element, p being an integer greater than q. p and r satisfy r=2p. Also, , p, q, and r satisfy r=p+q. One of the first light-emitting element and the second light-emitting element is green. The light emitting / receiving element emits red light and has a light receiving function. has.

[0211] For example, when a light receiving / emitting element is used to perform touch detection, the light emitted from the light source is visible to the user. Blue light is less visible than green light, so blue light It is preferable that the light source is a light emitting element that emits blue light. It is preferable that the light receiving element has a light receiving function.

[0212] As described above, pixels having various arrangements can be applied to the display device of this embodiment mode. do.

[0213] [Device structure] Next, a light-emitting element, a light-receiving element, and a receiving element that can be used in the display device of one embodiment of the present invention will be described. The detailed structure of the light-emitting element will be described.

[0214] The display device according to one embodiment of the present invention emits light in a direction opposite to a substrate on which a light-emitting element is formed. The top-emission type emits light toward the substrate on which the light-emitting element is formed, while the bottom-emission type emits light toward the substrate on which the light-emitting element is formed. The LED may be of either a cushion type, which emits light from both sides, or a dual emission type, which emits light from both sides.

[0215] In this embodiment, a top emission type display device will be described as an example.

[0216] In this specification and the like, unless otherwise specified, elements (light-emitting elements, light-emitting layers, etc.) Even when describing a configuration having multiple elements, when describing matters common to each element, For example, the light emitting layer 283R and the light emitting layer 283G are When common matters are explained, it may be referred to as light emitting layer 283.

[0217] The display device 280A shown in FIG. 10A includes a light receiving element 270PD and a light emitting element 270E that emits red (R) light. A light emitting element 270R, a light emitting element 270G that emits green (G) light, and a light emitting element 270G that emits blue (B) light. The light emitting element 270B has a

[0218] Each light-emitting element includes a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, a light-emitting layer, and an electron The light emitting device includes a transport layer 284, an electron injection layer 285, and a common electrode 275, which are laminated in this order. The light emitting element 270R has a light emitting layer 283R, and the light emitting element 270G has a light emitting layer 283G. The light emitting element 270B has a light emitting layer 283B. The light-emitting layer 283G has a light-emitting material that emits green light, and the light-emitting layer 283B has , and has a luminescent material that emits blue light.

[0219] The light emitting element is configured to emit light by applying a voltage between the pixel electrode 271 and the common electrode 275. It is an electroluminescent element that emits light toward the electrode 275 side.

[0220] The light receiving element 270PD includes a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, and an active layer 273, an electron transport layer 284, an electron injection layer 285, and a common electrode 275 are laminated in this order. It has.

[0221] The light receiving element 270PD receives light incident from the outside of the display device 280A and outputs an electric signal It is a photoelectric conversion element that converts

[0222] In this embodiment, the pixel electrode 271 is an anode in both the light emitting element and the light receiving element. The description will be given assuming that the common electrode 275 functions as a cathode. The element is driven by applying a reverse bias between the pixel electrode 271 and the common electrode 275. Light incident on the light-receiving element is detected, an electric charge is generated, and the electric charge can be extracted as a current.

[0223] In the display device of this embodiment, an organic compound is used for the active layer 273 of the light receiving element 270PD. The light receiving element 270PD has layers other than the active layer 273 in common with the light emitting element. Therefore, a process for forming the active layer 273 is added to the process for manufacturing the light emitting device. In this way, the light receiving element 270PD can be formed in parallel with the formation of the light emitting element. The optical element and the light receiving element 270PD can be formed on the same substrate. The light receiving element 270PD can be built into the display device without significantly increasing the number of processes.

[0224] In the display device 280A, the active layer 273 of the light receiving element 270PD and the light emitting layer 28 of the light emitting element 3 and 4 are made separately, but the light receiving element 270PD and the light emitting element have the same structure. However, the configuration of the light receiving element 270PD and the light emitting element is not limited to this. In addition to the active layer 273 and the light-emitting layer 283, the PD and the light-emitting element have layers that are made separately from each other. The light receiving element 270PD and the light emitting element may have one layer (common layer) that is used in common. It is preferable that the display device has the above-mentioned structure. A light receiving element 270PD can be built in.

[0225] The pixel electrode 271 and the common electrode 275, which are the electrodes from which light is extracted, are provided with a layer that transmits visible light. A conductive film that reflects visible light is used for the electrode on the side where light is not extracted. It is preferable that

[0226] The light emitting element of the display device of this embodiment is a micro optical resonator (microcavity). It is preferable that the light emitting element has a pair of electrodes. The device has electrodes that are transparent and reflective to visible light (semi-transmissive and semi-reflective electrodes). The other electrode is preferably an electrode having reflectivity to visible light (reflective electrode). It is preferable that the light emitting device has a microcavity structure, and the light emitted from the light emitting layer is By causing resonance between the two electrodes, the light emitted from the light emitting element can be intensified.

[0227] The semi-transmissive / semi-reflective electrode is a combination of a reflective electrode and an electrode that is transparent to visible light (transparent electrode). It can have a laminated structure with a metal electrode.

[0228] The light transmittance of the transparent electrode is 40% or more. For example, the light emitting element is a transparent electrode that transmits visible light (wavelength 4 It is preferable to use an electrode having a transmittance of 40% or more for light having a wavelength of 000 nm or more and less than 750 nm. The reflectance of the semi-transmissive / semi-reflective electrode for visible light is 10% or more and 95% or less, preferably 30% or less. The reflectance of the reflective electrode to visible light is preferably 40% or more and 100% or less. The resistivity of these electrodes is 1×10 -2 Ω It is preferable that the light emitting element emits near-infrared light (wavelength: 750 nm to 1300 nm). When the electrodes emit near-infrared light, the transmittance or reflectance of the electrodes is 1 / 100th of that of the visible light. Similarly to the reflectance, it is preferable that the above numerical range is satisfied.

[0229] The light-emitting element has at least a light-emitting layer 283. The light-emitting element has layers other than the light-emitting layer 283. In addition, a material with high hole injection properties, a material with high hole transport properties, a hole blocking material, a material with high electron transport properties, materials with low electron injection properties, electron blocking materials, or bipolar materials (electron transport The light-emitting layer may further include a layer containing a substance having high electron transport and hole transport properties.

[0230] For example, the light emitting device and the light receiving device may include a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. One or more of the input layers may have a common structure. One or more layers of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer are separately formed. It is possible.

[0231] The hole injection layer is a layer that injects holes from the anode to the hole transport layer, and is made of a material with high hole injection properties. The material having a high hole injection property is an aromatic amine compound or a hole transport material. A composite material containing a material having a property of being an electron acceptor and a material having an electron accepting property can be used.

[0232] In the light-emitting device, the hole transport layer is a layer that transports holes injected from the anode through the hole injection layer. In a light receiving element, the hole transport layer is a layer that transports light incident on the active layer to the light receiving layer. The hole transport layer is a layer that transports holes generated based on the above to the anode. The hole transport material is 1×10 -6 cm 2 / Vs or higher hole mobility In addition, other materials that have a higher hole transporting property than an electron transporting property are also usable. As the hole transport material, a π-electron-rich heteroaromatic compound (e.g. For example, carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines (aromatic A material having a high hole transporting property, such as a compound having an aromatic amine skeleton, is preferred.

[0233] In the light-emitting device, the electron transport layer emits electrons injected from the cathode by the electron injection layer. In a light receiving element, the electron transport layer is a layer that transports light incident on the active layer to the light receiving layer. The electron transport layer is a layer that transports the generated electrons to the cathode. The electron transport material is 1×10 -6 cm 2 / Vs or higher electron mobility In addition, other materials that have a higher electron transporting property than a hole transporting property are also usable. As the electron transport material, metal complexes having a quinoline skeleton, Metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, and thiazole skeletons In addition to metal complexes with cations, oxadiazole derivatives, triazole derivatives, imidazoline derivatives, azole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline Quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzo Quinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, etc. Materials with high electron transport properties, such as π-electron deficient heteroaromatic compounds including nitrogen heteroaromatic compounds, It can be used.

[0234] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is made of a material with high electron injection properties. The material having high electron injection properties is an alkali metal, an alkaline earth metal, or As a material having a high electron injection property, a compound having an electron transport property or a compound thereof can be used. A composite material containing a material and a donor material (electron donor material) can also be used.

[0235] The light-emitting layer 283 is a layer containing a light-emitting material. The luminescent material may be blue, purple, blue-purple, green, yellow-green, yellow, A substance that emits light of a color such as red, orange, or red is appropriately used. Light-emitting materials can also be used.

[0236] Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials. can be.

[0237] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, and triphenylene derivatives. fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, Examples of the aryl group include phenylene derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0238] Examples of phosphorescent materials include those with a 4H-triazole skeleton, a 1H-triazole skeleton, and an imide Organometallic complexes having a dazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton complexes (especially iridium complexes), and phenylpyridine derivatives with electron-withdrawing groups as ligands Examples of the complex include organometallic complexes (particularly iridium complexes), platinum complexes, and rare earth metal complexes.

[0239] The light-emitting layer 283 contains one or more organic compounds ( The organic compound may include one or more organic compounds. For the above-mentioned layer, one or both of a hole transporting material and an electron transporting material can be used. As one or more organic compounds, a bipolar material or a TADF material is used. This is also fine.

[0240] The light-emitting layer 283 is made of, for example, a phosphorescent material and a hole It is preferable that the light-transmitting layer has a transport material and an electron transport material. This allows the energy transfer from the exciplex to the luminescent material (phosphorescent material), known as ExTET (Ex Efficient light emission using ciplex-triplet energy transfer It is often possible to obtain an emission wavelength that overlaps with the lowest energy absorption band of the luminescent material. By selecting a combination that forms an exciplex that emits light, energy transfer can be accelerated. This configuration allows the light emitting element to have a high efficiency and It is possible to achieve both low voltage operation and long life at the same time.

[0241] The combination of materials that form an exciplex is based on the HOMO level (maximum It is preferable that the occupied orbital level of the hole transporting material is equal to or higher than the HOMO level of the electron transporting material. The LUMO level (lowest unoccupied molecular orbital) of the conductive material is equal to or higher than the LUMO level of the electron transport material. The LUMO and HOMO levels of the material are preferably determined by cyclic voltammetry ( It is derived from the electrochemical properties (reduction potential and oxidation potential) of the material measured by CV measurement. It is possible.

[0242] The formation of an exciplex can be used to determine the emission spectrum of a hole transport material, the emission spectrum of an electron transport material, or the like. The emission spectra of the mixed films were compared. The spectrum shifts to longer wavelengths than the emission spectrum of each material (or new emission spectra are generated on the longer wavelength side). This can be confirmed by observing the phenomenon of the hole transport material. Transient photoluminescence (PL) of materials, transient PL of electron transport materials, and The transient PL lifetime of the mixed film was compared, and it was found that the transient PL lifetime of the mixed film was longer than that of each material. The difference in transient response, such as the proportion of long-lived components or delayed components, was observed. The above-mentioned transient PL can be confirmed by measuring the transient electroluminescence. That is, the transient EL of the hole transport material, The transient EL of the materials with molecular transport properties and the mixed film of these materials were compared, and the transient response was investigated. By observing the difference, the formation of the exciplex can also be confirmed.

[0243] The active layer 273 includes a semiconductor. The semiconductor may be an inorganic semiconductor such as silicon, or In the present embodiment, the active layer 273 has An example of using an organic semiconductor as the semiconductor is shown below. 3 and the active layer 273 can be formed by the same method (e.g., vacuum deposition method), and the manufacturing This is preferable because the device can be standardized.

[0244] The active layer 273 is made of an n-type semiconductor material such as fullerene (e.g., C 60 , C 70 Examples of such materials include electron-accepting organic semiconductor materials such as fullerene derivatives. It has a soccer ball-like shape, which is energetically stable. has deep (low) HOMO and LUMO levels. Fullerene has a LUMO level Since the electron acceptor is deep, it has a very high electron acceptor. When the π-electron conjugation (resonance) spreads across the surface, the electron donating property (donor property) increases, but in fullerenes, Because of its spherical shape, the electron acceptability is high even though the π electrons are widely spread. High electron acceptance allows charge separation to occur quickly and efficiently, making it useful as a light-receiving element. There is. 60 , C 70 Both have a wide absorption band in the visible light region, especially C 70 is C 60 It is preferred because it has a larger π-electron conjugated system and a broad absorption band in the long wavelength region as compared to the above.

[0245] As n-type semiconductor materials, metal complexes with quinoline skeletons and benzoquinoline skeletons are also available. metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton Complexes, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazo derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinone derivatives quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives Dinidine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives derivatives, rhodamine derivatives, triazine derivatives, quinone derivatives, etc.

[0246] The p-type semiconductor material of the active layer 273 is copper (II) phthalocyanine (Cop per(II) phthalocyanine;CuPc), tetraphenyldibenzo Periflanthene (Tetraphenyldibenzoperiflanthene; DBP), Zinc Phthalocyanine (ZnPc) Examples of electron-donating organic semiconductor materials include tin phthalocyanine (SnPc) and quinacridone. Can be obtained.

[0247] As p-type semiconductor materials, carbazole derivatives, thiophene derivatives, and furan derivatives are used. Compounds having an aromatic amine skeleton and conductors are also included as p-type semiconductor materials. Examples of the derivatives include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, Fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, Indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazo derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, chiral derivatives, Nacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyf Examples of the derivatives include fluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives. .

[0248] The HOMO level of an electron-donating organic semiconductor material is the same as the HOM level of an electron-accepting organic semiconductor material. It is preferable that the LUMO level of the electron-donating organic semiconductor material is shallower (higher) than the O level. is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0249] We used spherical fullerenes as electron-accepting organic semiconductor materials to fabricate electron-donating organic semiconductors. It is preferable to use an organic semiconductor material with a shape close to a plane as the substrate material. When molecules of the same kind aggregate, the energy levels of their molecular orbitals change Since these are close to each other, the carrier transport property can be improved.

[0250] For example, the active layer 273 is preferably formed by co-evaporation of an n-type semiconductor and a p-type semiconductor. stomach.

[0251] Both low molecular weight compounds and high molecular weight compounds can be used for the light emitting and receiving elements. The layers constituting the light-emitting element and the light-receiving element may each include , deposition method (including vacuum deposition method), transfer method, printing method, inkjet method, coating method, etc. It can be formed.

[0252] In the display device 280B shown in FIG. 10B, the light receiving element 270PD and the light emitting element 270R are the same. The display device 280 differs from the display device 280A in terms of configuration.

[0253] The light receiving element 270PD and the light emitting element 270R share the active layer 273 and the light emitting layer 283R. Yes.

[0254] Here, the light receiving element 270PD is a light emitting element that emits light having a longer wavelength than the light to be detected. For example, a light receiving element 270PD configured to detect blue light is preferably used. may have the same configuration as one or both of the light emitting element 270R and the light emitting element 270G. For example, a light receiving element 270PD configured to detect green light can be A similar configuration can be used.

[0255] The light receiving element 270PD and the light emitting element 270R are formed in a common configuration. Compared with the configuration in which the 70PD and the light emitting element 270R have layers that are separately manufactured, Therefore, the number of steps and the number of masks can be reduced. This can reduce manufacturing costs.

[0256] In addition, by making the light receiving element 270PD and the light emitting element 270R into a common configuration, Compared to a configuration in which the element 270PD and the light-emitting element 270R have layers that are made separately from each other, The margin for misalignment can be narrowed, which increases the aperture ratio of the pixel. This can improve the light extraction efficiency of the display device, thereby extending the life of the light emitting element. In addition, the display device can display high brightness. It is also possible to achieve higher resolution.

[0257] The light-emitting layer 283R has a light-emitting material that emits red light. An organic compound that absorbs short wavelength light (e.g., green light and / or blue light) The active layer 273 does not easily absorb red light and absorbs light with a shorter wavelength than red light. As a result, the light emitting element 270R emits red light. is efficiently extracted, and the 270PD photodetector detects light with wavelengths shorter than red with high accuracy. It is possible.

[0258] In the display device 280B, the light emitting element 270R and the light receiving element 270PD are of the same configuration. The light emitting element 270R and the light receiving element 270PD are of different thicknesses. An optical adjustment layer may be provided.

[0259] The display device 280C shown in FIG. 11A and FIG. 11B emits red (R) light and has a light receiving device. a light-emitting element 270SR having a light receiving function, a light-emitting element 270G emitting green (G) light, and It has a light-emitting element 270B that emits light of color (B).

[0260] Each light-emitting element includes a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, a light-emitting layer, and an electron The light emitting device includes a transport layer 284, an electron injection layer 285, and a common electrode 275, which are laminated in this order. Light emitting element 270G has light emitting layer 283G, and light emitting element 270B has light emitting layer 283B. The light-emitting layer 283G has a light-emitting material that emits green light, and the light-emitting layer 283B has a light-emitting material that emits blue light. It has a luminescent material that emits light.

[0261] The light emitting / receiving element 270SR includes a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, an active The conductive layer 273, the light-emitting layer 283R, the electron transport layer 284, the electron injection layer 285, and the common electrode 27 5 are stacked in this order.

[0262] The light emitting / receiving element 270SR of the display device 280C is the same as the light emitting / receiving element 270SR of the display device 280B. The light emitting element 270R and the light receiving element 270PD have the same configuration. The light emitting elements 270G and 270B of the display device 280B are also It has the same configuration as 70G and 270B.

[0263] FIG. 11A shows a case where the light emitting / receiving element 270SR functions as a light emitting element. In this example, the light emitting element 270B emits blue light, the light emitting element 270G emits green light, and An example is shown in which element 270SR emits red light.

[0264] FIG. 11B shows a case where the light receiving / emitting element 270SR functions as a light receiving element. Now, let us consider the blue light emitted by the light emitting element 270B and the green light emitted by the light emitting element 270G. 2 shows an example of detection by the light receiving / emitting element 270SR.

[0265] The light emitting element 270B, the light emitting element 270G, and the light receiving / emitting element 270SR are each a pixel. The pixel electrode 271 and the common electrode 275 are provided. In this embodiment, the pixel electrode 271 serves as an anode. The case where the common electrode 275 functions as a cathode will be described as an example.

[0266] In the present embodiment, in the light emitting element 270SR, the pixel electrode 2 In the following description, the common electrode 71 functions as an anode and the common electrode 275 functions as a cathode. That is, the light emitting / receiving element 270SR applies a reverse bias between the pixel electrode 271 and the common electrode 275. By driving it, the light incident on the light-receiving element 270SR is detected, an electric charge is generated, and It can be extracted as a current.

[0267] The light emitting / receiving element 270SR shown in FIG. 11A and FIG. 11B includes an active layer 273 In other words, the active layer 273 is formed in the process of manufacturing the light emitting device. By simply adding a film-forming process, the light-emitting element 270SR is formed in parallel with the formation of the light-emitting element. In addition, the light emitting element and the light emitting / receiving element can be formed on the same substrate. Therefore, it is possible to provide the display with both imaging and sensing functions without significantly increasing the manufacturing process. Either or both may be granted.

[0268] The stacking order of the light emitting layer 283R and the active layer 273 is not limited. In the example shown in FIG. 1, an active layer 273 is provided on a hole transport layer 282, and a light emitting layer 283R is provided on the active layer 273. The light-emitting layer 283R is provided on the hole transport layer 282. An active layer 273 may be provided on 83R.

[0269] As shown in FIGS. 11A and 11B, the active layer 273 and the light emitting layer 283R are in contact with each other. In addition, a buffer layer may be sandwiched between the active layer 273 and the light emitting layer 283R. The buffer layer may be a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a hole blocking layer, or a At least one of a lock layer, an electron blocking layer, and the like can be used.

[0270] By providing a buffer layer between the active layer 273 and the light-emitting layer 283R, The transfer of excitation energy from the active layer 273 to the buffer layer can be suppressed. It is also possible to adjust the optical path length (cavity length) of the microcavity structure. Therefore, a light emitting / receiving element having a buffer layer between the active layer 273 and the light emitting layer 283R emits high Therefore, high luminous efficiency can be obtained.

[0271] The light emitting / receiving element further includes a hole injection layer 281, a hole transport layer 282, an electron transport layer 284, and At least one of the electron injection layers 285 may not be included. The layer may have other functional layers, such as a hole blocking layer, an electron blocking layer, etc.

[0272] In addition, the light emitting / receiving element does not have the active layer 273 and the light emitting layer 283R, and the light emitting layer and the active layer are combined. The layer that functions as both a light-emitting layer and an active layer may be, for example, an active layer 273. an n-type semiconductor that can be used for the active layer 272; and a p-type semiconductor that can be used for the active layer 273; A layer containing three materials, a luminescent material that can be used for the luminescent layer 283R, and can.

[0273] In addition, the lowest energy side of the absorption spectrum of a mixed material of n-type and p-type semiconductors The absorption band and the maximum peak of the emission spectrum (PL spectrum) of the luminescent material overlap each other. It is preferable that they are not spaced apart from each other, and it is more preferable that they are sufficiently separated from each other.

[0274] In the light emitting / receiving element, a conductive film that transmits visible light is used for the electrode on the side from which light is extracted. In addition, it is preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted. .

[0275] The functions and materials of the layers constituting the light emitting and receiving elements are as follows: Since the functions and materials are similar, detailed explanations are omitted.

[0276] A detailed configuration of a display device according to one embodiment of the present invention will be described below with reference to FIGS. 12 and 13. explain.

[0277] [Display device 100A] FIG. 12A shows a cross-sectional view of the display device 100A.

[0278] The display device 100A includes a light receiving element 110 and a light emitting element 190.

[0279] The light-emitting element 190 includes a pixel electrode 191, a buffer layer 192, a light-emitting layer 193, and a buffer layer 194. The buffer layer 192 is a hole injection layer. The light-emitting layer 193 may have one or both of a hole transport layer and a hole transport layer. The buffer layer 194 may include one or both of an electron injection layer and an electron transport layer. The light emitting element 190 has a function of emitting visible light. Furthermore, the light-emitting element may have a function of emitting infrared light.

[0280] The light receiving element 110 includes a pixel electrode 191, a buffer layer 182, an active layer 183, and a buffer layer 1 The buffer layer 182 is a hole transport layer. The active layer 183 may include an organic compound. The buffer layer 184 may include an electrode. The light receiving element 110 has a function of detecting visible light. The light receiving element 110 may further have a function of detecting infrared light.

[0281] In this embodiment, in both the light emitting element 190 and the light receiving element 110, a pixel electrode The following description will be given assuming that 191 functions as an anode and the common electrode 115 functions as a cathode. That is, the light receiving element 110 is reverse biased between the pixel electrode 191 and the common electrode 115. By driving the display device 100A, the display device 100A detects light incident on the light receiving element 110 and stores an electric charge. It can be generated and extracted as an electric current.

[0282] Pixel electrode 191, buffer layer 182, buffer layer 192, active layer 183, light-emitting layer 193 The buffer layer 184, the buffer layer 194, and the common electrode 115 each have a single-layer structure. It may have a laminated structure.

[0283] The pixel electrodes 191 are located on the insulating layer 214. Each pixel electrode 191 is made of the same material and The end of the pixel electrode 191 is covered with the partition wall 216. Two adjacent pixel electrodes 191 are electrically insulated from each other by a partition wall 216. are electrically isolated.

[0284] An organic insulating film is suitable for the partition wall 216. Materials that can be used for the organic insulating film Examples include acrylic resin, polyimide resin, epoxy resin, polyamide resin, and polyimide. Amide resins, siloxane resins, benzocyclobutene resins, phenolic resins, and their combinations The partition wall 216 is a layer that transmits visible light. Alternatively, a partition that blocks visible light may be provided.

[0285] The common electrode 115 is a layer shared by the light receiving element 110 and the light emitting element 190 .

[0286] The material and thickness of the pair of electrodes of the light receiving element 110 and the light emitting element 190 are the same. This makes it possible to reduce the manufacturing cost of the display device and simplify the manufacturing process. .

[0287] The display device 100A includes a light receiving element 110 between a pair of substrates (substrate 151 and substrate 152). , a light-emitting element 190, a transistor 131, a transistor 132, and the like.

[0288] In the light receiving element 110, the pixel electrode 191 and the common electrode 115 are disposed between the pixel electrode 191 and the common electrode 115. The buffer layer 182, the active layer 183, and the buffer layer 184 are organic layers (containing organic compounds). The pixel electrode 191 preferably has a function of reflecting visible light. The common electrode 115 has a function of transmitting visible light. In the case of a configuration for detecting infrared light, the common electrode 115 has a function of transmitting infrared light. It is preferable that the element electrode 191 has a function of reflecting infrared light.

[0289] The light receiving element 110 has a function of detecting light. A photoelectric conversion element that receives light 122 incident from outside the device 100A and converts it into an electrical signal. The light 122 can also be said to be light emitted by the light emitting element 190 and reflected by the object. The light 122 is incident on the light receiving element 110 via a lens or the like provided in the display device 100A. may be incident on

[0290] In the light-emitting element 190, the pixel electrode 191 and the common electrode 115 are disposed between the pixel electrode 191 and the common electrode 115. The buffer layer 192, the light-emitting layer 193, and the buffer layer 194 are collectively referred to as an EL layer. The EL layer has at least the light-emitting layer 193. As described above, the pixel electrode 1 It is preferable that the common electrode 91 has a function of reflecting visible light. The display device 100A has a structure including a light emitting element that emits infrared light. In this case, the common electrode 115 has a function of transmitting infrared light. It is preferable that 1 has a function of reflecting infrared light.

[0291] The light-emitting element of the display device of this embodiment is a micro-optical resonator (microcavity). Preferably, the structure is applied.

[0292] The buffer layer 192 or the buffer layer 194 may have a function as an optical adjustment layer. By making the thickness of the buffer layer 192 or the buffer layer 194 different, In this way, it is possible to enhance and extract light of a specific color.

[0293] The light emitting element 190 has a function of emitting visible light. By applying a voltage between the element electrode 191 and the common electrode 115, light is emitted toward the substrate 152. It is an electroluminescent element (see light emission 121).

[0294] The pixel electrode 191 of the light receiving element 110 is connected to the insulating layer 214 through an opening. The gate electrode 114 is electrically connected to the source or drain of the transistor 131 .

[0295] The pixel electrode 191 of the light emitting element 190 is connected to the insulating layer 214 through an opening. It is electrically connected to the source or drain of the transistor 132 .

[0296] The transistors 131 and 132 are formed in the same layer (substrate 151 in FIG. 12A). It is attached above.

[0297] At least a part of the circuit electrically connected to the light receiving element 110 is electrically connected to the light emitting element 190. It is preferable that the circuit is formed of the same material and in the same process as the circuit to which it is electrically connected. This allows the display device to be thinner than when the two circuits are formed separately. In addition, the manufacturing process can be simplified.

[0298] The light receiving element 110 and the light emitting element 190 are each covered with a protective layer 116. 12A, a protective layer 116 is provided on and in contact with a common electrode 115. By providing the protective layer 116, impurities such as water are prevented from entering the light receiving element 110 and the light emitting element 190. This can improve the reliability of the light receiving element 110 and the light emitting element 190. In addition, the protective layer 116 and the substrate 152 are bonded together by the adhesive layer 142 .

[0299] A light-shielding layer 158 is provided on the surface of the substrate 152 facing the substrate 151. The light-shielding layer 158 is , and has openings at a position overlapping with the light emitting element 190 and a position overlapping with the light receiving element 110.

[0300] Here, the light receiving element 110 detects the light emitted by the light emitting element 190 and reflected by the object. However, the light emitted from the light emitting element 190 is reflected inside the display device 100A and passes through the object. Instead, the light may enter the light receiving element 110. The light blocking layer 158 is For example, if the light-shielding layer 158 is not provided, the influence of the light-emitting element The light 123 emitted by the element 190 is reflected by the substrate 152, and the reflected light 124 reaches the light receiving element 110. By providing the light blocking layer 158, the reflected light 124 can be prevented from entering the light receiving element 110. This reduces noise and improves the sensor performance using the light receiving element 110. The sensitivity can be increased.

[0301] The light-shielding layer 158 may be made of a material that blocks light emitted from the light-emitting element. The light-shielding layer 158 preferably absorbs visible light. For example, a metal material, Alternatively, a black mark can be created by using a resin material containing a pigment (such as carbon black) or a dye. The light-shielding layer 158 can form a red color filter, a green color filter, and a The transparent electrode may have a laminated structure of a black filter and a blue color filter.

[0302] [Display device 100B] 12B and 12C are cross-sectional views of the display device 100B. Here, the description of the same configuration as the display device described above may be omitted.

[0303] The display device 100B includes a light-emitting element 190B, a light-emitting element 190G, and a light-receiving / light-emitting element 190S. Has R.

[0304] The light emitting element 190B includes a pixel electrode 191, a buffer layer 192B, a light emitting layer 193B, and a buffer The light emitting element 190B has a blue light emitting layer 194B and a common electrode 115 laminated in this order. It has the function of emitting light of color 121B.

[0305] The light emitting element 190G includes a pixel electrode 191, a buffer layer 192G, a light emitting layer 193G, a buffer The light emitting element 190G has a green layer 194G and a common electrode 115 laminated in this order. It has the function of emitting colored light 121G.

[0306] The light emitting / receiving element 190SR includes a pixel electrode 191, a buffer layer 192R, an active layer 183, and a light emitting element. The layer 193R, the buffer layer 194R, and the common electrode 115 are laminated in this order. The optical element 190SR has a function of emitting red light 121R and a function of detecting light 122. Yes.

[0307] FIG. 12B shows a case where the light emitting / receiving element 190SR functions as a light emitting element. In this example, light-emitting element 190B emits blue light, light-emitting element 190G emits green light, and An example is shown in which element 190SR emits red light.

[0308] FIG. 12C shows a case where the light receiving / emitting element 190SR functions as a light receiving element. Now, consider the blue light emitted by light-emitting element 190B and the green light emitted by light-emitting element 190G. 1 shows an example of detection by the light receiving / emitting element 190SR.

[0309] The display device 100B includes a light emitting / receiving element 19 between a pair of substrates (substrate 151 and substrate 152). OSR, a light-emitting element 190G, a light-emitting element 190B, a transistor 132, and the like.

[0310] The pixel electrode 191 is located on the insulating layer 214. The pixel electrodes 191 are electrically insulated from each other by the partition wall 216. The source or drain of the transistor 132 is electrically connected to the source or drain of the transistor 132 through an opening formed in the is connected to.

[0311] The light emitting / receiving element and the light emitting element are preferably covered with a protective layer 116 . The protective layer 116 and the substrate 152 are bonded together by the adhesive layer 142. A light-shielding layer 158 is provided on the surface of 152 facing the substrate 151 .

[0312] [Display device 100C] FIG. 13A shows a cross-sectional view of the display device 100C.

[0313] The display device 100C includes a light receiving element 110 and a light emitting element 190.

[0314] The light emitting element 190 includes a pixel electrode 191, a common layer 112, a light emitting layer 193, a common layer 114, and and a common electrode 115 in this order. The common layer 112 is one of a hole injection layer and a hole transport layer. Or, it may have both. The light-emitting layer 193 includes an organic compound. The common layer 114 The light-emitting element 190 may have one or both of an electron injection layer and an electron transport layer. The display device 100C further has a function of emitting infrared light. The light emitting element may have a function.

[0315] The light receiving element 110 includes a pixel electrode 191, a common layer 112, an active layer 183, a common layer 114, and The active layer 183 includes an organic compound. The optical element 110 has a function of detecting visible light. The sensor may have a function of detecting external light.

[0316] The pixel electrode 191, the common layer 112, the active layer 183, the light-emitting layer 193, the common layer 114, and the common Each of the conductive electrodes 115 may have a single-layer structure or a multi-layer structure.

[0317] The pixel electrode 191 is located on the insulating layer 214. The pixel electrodes 191 are electrically insulated from each other by the partition wall 216. The source or drain of the transistor 132 is electrically connected to the source or drain of the transistor 132 through an opening formed in the is connected to.

[0318] The common layer 112, the common layer 114, and the common electrode 115 are connected to the light receiving element 110 and the light emitting element 19. At least one of the layers constituting the light receiving element 110 and the light emitting element 190 is a layer that is used in common to both elements. By using a common structure for both of them, the manufacturing process of the display device can be reduced, which is preferable.

[0319] The display device 100C includes a light receiving element 110 between a pair of substrates (substrate 151 and substrate 152). , a light-emitting element 190, a transistor 131, a transistor 132, and the like.

[0320] The light receiving element 110 and the light emitting element 190 are each covered with a protective layer 116. In addition, the protective layer 116 and the substrate 152 are bonded together by the adhesive layer 142. There are.

[0321] A resin layer 159 is provided on the surface of the substrate 152 facing the substrate 151. 1, the light emitting element 190 is provided at a position overlapping the light receiving element 110. stomach.

[0322] The resin layer 159 is provided at a position overlapping the light emitting element 190 as shown in FIG. 13B. and may have an opening 159p at a position overlapping with the light receiving element 110. Alternatively, the resin layer 159 may overlap the light emitting element 190 as shown in FIG. 13C. The light receiving element 110 is arranged in an island shape at the position where the light receiving element 110 overlaps the light receiving element 110. It is possible.

[0323] The light-shielding layer 15 is formed on the surface of the substrate 152 facing the substrate 151 and on the surface of the resin layer 159 facing the substrate 151. The light-shielding layer 158 is provided at a position where it overlaps with the light-emitting element 190 and at a position where it overlaps with the light-receiving element 1 It has an opening at the position where it overlaps with 10.

[0324] Here, the light receiving element 110 detects the light emitted by the light emitting element 190 and reflected by the object. However, the light emitted from the light emitting element 190 is reflected within the display device 100C and passes through the object. Instead, the light may enter the light receiving element 110. The light blocking layer 158 is The light-shielding layer 15 absorbs the light and reduces the stray light incident on the light-receiving element 110. The filter 8 absorbs stray light 123a that passes through the resin layer 159 and is reflected by the surface of the substrate 152 on the substrate 151 side. In addition, the light blocking layer 158 can absorb the stray light 123b before it reaches the resin layer 159. This makes it possible to reduce stray light incident on the light receiving element 110. Therefore, it is possible to reduce noise and increase the sensitivity of the sensor using the light receiving element 110. In particular, if the light-shielding layer 158 is located close to the light-emitting element 190, stray light can be further reduced. In addition, when the light-shielding layer 158 is located close to the light-emitting element 190, the display This is also preferable from the viewpoint of improving display quality, since viewing angle dependency can be suppressed.

[0325] In addition, by providing the light-shielding layer 158, the range in which the light receiving element 110 detects light can be controlled. If the light blocking layer 158 is located far away from the light receiving element 110, the imaging range will be narrow. This enables the imaging resolution to be increased.

[0326] When the resin layer 159 has an opening, the light-shielding layer 158 covers at least a part of the opening, and It is preferable to cover at least a part of the side surface of the resin layer 159 exposed in the opening.

[0327] When the resin layer 159 is provided in an island shape, the light blocking layer 158 is formed on a small portion of the side surface of the resin layer 159. It is preferable that the insulating layer 10 is at least partially covered.

[0328] In this way, the light-shielding layer 158 is provided along the shape of the resin layer 159. The distance from the light-shielding layer 8 to the light-emitting element 190 (specifically, the light-emitting region of the light-emitting element 190) is 158 to the light receiving element 110 (specifically, the light receiving area of ​​the light receiving element 110) This reduces sensor noise, increases image resolution, and improves display quality. Therefore, the display quality and image quality of the display device can be improved. This can improve both image quality and image quality.

[0329] The resin layer 159 is a layer that transmits light emitted from the light emitting element 190. The following resins are available: acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide ammonia resins, siloxane resins, benzocyclobutene resins, phenolic resins, and other resins The structure provided between the substrate 152 and the light-shielding layer 158 may be a precursor of a resin. The thickness of the structure is not limited to the oil layer, and an inorganic insulating film or the like may be used. There is a difference between the distance from the light-shielding layer to the light-receiving element and the distance from the light-shielding layer to the light-emitting element. Any organic insulating film can be easily formed thick, and is therefore suitable for the structure.

[0330] The distance from the light-shielding layer 158 to the light-receiving element 110 and the distance from the light-shielding layer 158 to the light-emitting element 190 In order to compare the distance from the end of the light-shielding layer 158 on the light-receiving element 110 side to the common The shortest distance L1 to the electrode 115 and the distance from the end of the light-shielding layer 158 on the light-emitting element 190 side to the common electrode The shortest distance L2 to 115 can be used. Since L2 is short, stray light from the light emitting element 190 is suppressed, and the sensor using the light receiving element 110 The sensitivity of the display can be increased. Also, the viewing angle dependency of the display can be suppressed. The shortest distance L1 is longer than the distance L2, so that the imaging range of the light receiving element 110 is narrowed. This makes it possible to improve the imaging resolution.

[0331] In addition, the adhesive layer 142 is located closer to the light receiving element 110 than the portion overlapping the light emitting element 190. By making the overlapping portion thick, the distance from the light-shielding layer 158 to the light-receiving element 110 and , and the distance from the light-shielding layer 158 to the light-emitting element 190 can be made different.

[0332] A more detailed configuration of a display device according to one embodiment of the present invention will be described below with reference to FIGS. This article explains:

[0333] [Display device 100D] FIG. 14 shows a perspective view of the display device 100D, and FIG. 15 shows a cross-sectional view of the display device 100D. vinegar.

[0334] The display device 100D has a configuration in which a substrate 152 and a substrate 151 are bonded together. In FIG. 4, the substrate 152 is clearly shown by a dashed line.

[0335] The display device 100D includes a display portion 162, a circuit 164, wiring 165, and the like. An example in which an IC (integrated circuit) 173 and an FPC 172 are mounted on a display device 100D is shown. Therefore, the configuration shown in FIG. 14 includes a display device 100D, an IC, and an FPC. It can also be called a display module.

[0336] The circuit 164 can be, for example, a scanning line driver circuit.

[0337] The wiring 165 has a function of supplying signals and power to the display portion 162 and the circuit 164 . The signals and power are input from the outside to the wiring 165 via the FPC 172, or The signal is input from IC 173 to wiring 165 .

[0338] In Figure 14, the COG (Chip On Glass) method or the COF (Chip on In this example, an IC 173 is provided on a substrate 151 by a method such as a film method. For example, an IC having a scanning line driver circuit or a signal line driver circuit can be applied to 173 . The display device 100D and the display module may be configured without an IC. The IC may be mounted on the FPC using a COF method or the like.

[0339] FIG. 15 shows a part of the area including the FPC 172 of the display device 100D shown in FIG. A part of the area including the display unit 162, and a part of the area including the end portion. 4 shows an example of a cross section of each of the above.

[0340] The display device 100D shown in FIG. 15 includes a transistor 24 between a substrate 151 and a substrate 152. 1, transistor 245, transistor 246, transistor 247, light-emitting element 190B , a light emitting element 190G, and a light receiving / emitting element 190SR.

[0341] The substrate 152 and the protective layer 116 are bonded together by an adhesive layer 142. The sealing of the element 0B, the light emitting element 190G, and the light receiving / emitting element 190SR is performed using a solid sealing structure or a hollow sealing structure. In FIG. 15, the substrate 152, the adhesive layer 142, and the insulating layer 214 are The enclosed space is sealed by an adhesive layer 142, and a solid sealing structure is applied. .

[0342] The light emitting element 190B includes, from the insulating layer 214 side, a pixel electrode 191, a common layer 112, and a light emitting layer 19. 3B, a common layer 114, and a common electrode 115 are laminated in this order. 191 is a conductive layer of the transistor 247 through an opening provided in the insulating layer 214. The transistor 247 is connected to the light emitting element 190B. The edge of the pixel electrode 191 is covered with a partition wall 216. 91 includes a material that reflects visible light, and the common electrode 115 includes a material that transmits visible light.

[0343] The light emitting element 190G includes, from the insulating layer 214 side, a pixel electrode 191, a common layer 112, and a light emitting layer 19. The pixel electrode has a laminated structure in which the pixel electrode 3G, the common layer 114, and the common electrode 115 are laminated in this order. 191 is a conductive layer of the transistor 246 through an opening provided in the insulating layer 214. The transistor 246 controls the driving of the light-emitting element 190G. It has functions.

[0344] The light emitting / receiving element 190SR is made up of, from the insulating layer 214 side, a pixel electrode 191, a common layer 112, an active layer 183, a light-emitting layer 193R, a common layer 114, and a common electrode 115 are laminated in this order. The pixel electrode 191 is connected to the transistor 2 through an opening provided in the insulating layer 214. The transistor 245 is electrically connected to the conductive layer 222b of the transistor 245. It has the function of controlling the driving of element 190SR.

[0345] The light emitted by the light emitting element 190B, the light emitting element 190G, and the light receiving / emitting element 190SR is guided to the substrate 15. The light emitting / receiving element 190SR is provided with a substrate 152 and an adhesive layer 142 therebetween. The substrate 152 and the adhesive layer 142 are made of a material that is highly transparent to visible light. It is preferable to use a

[0346] The pixel electrodes 191 of the light emitting element 190B, the light emitting element 190G, and the light emitting / receiving element 190SR The common layer 112, the common layer 114, and the common layer 115 can be manufactured using the same material and the same process. The common electrode 115 is common to the light emitting element 190B, the light emitting element 190G, and the light emitting / receiving element 190SR. The light emitting / receiving element 190SR is a light emitting element that emits red light. 183 is added. 190SR has the same structure except for the structure of the active layer 183 and the light-emitting layer 193 for each color. This makes it possible to manufacture the display device 100D without significantly increasing the number of manufacturing steps. A light receiving function can be added to the display unit 162.

[0347] A light-shielding layer 158 is provided on the surface of the substrate 152 facing the substrate 151. The light-shielding layer 158 is , the position where the light emitting element 190B, the light emitting element 190G, and the light emitting / receiving element 190SR overlap each other. By providing the light shielding layer 158, the light receiving / emitting element 190SR detects light in a wide range. As described above, the range of the light emitting / receiving element 190SR is controlled. It is preferable to control the light incident on the light receiving / emitting element by adjusting the position of the opening in the light blocking layer. In addition, by having the light-shielding layer 158, light emitted from the light-emitting element 190 is not reflected by the object. This prevents light from being directly incident on the optical element 190SR. This reduces noise and improves sensitivity. This makes it possible to realize a highly accurate sensor.

[0348] Transistor 241, transistor 245, transistor 246, and transistor 2 47 are both formed on a substrate 151. These transistors are made of the same material. And they can be produced by the same process.

[0349] On the substrate 151, an insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are formed. The insulating layer 211 is provided in this order. A part of the insulating layer 211 serves as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. An insulating layer 215 is provided over the transistor. The gate insulating layer is provided to cover the gate electrodes and functions as a planarization layer. The number of insulating layers covering the transistor is not limited, and each may be a single layer or two or more layers. .

[0350] At least one of the insulating layers covering the transistors is designed to prevent impurities such as water and hydrogen from diffusing. It is preferable to use a material that can function as a barrier layer. This structure effectively prevents impurities from diffusing into the transistor from the outside. This can effectively suppress the noise and improve the reliability of the display device.

[0351] The insulating layers 211, 213, and 215 are each made of an inorganic insulating film. As the inorganic insulating film, for example, a silicon nitride film or a silicon oxynitride film is preferable. film, silicon oxide film, silicon nitride oxide film, aluminum oxide film, aluminum nitride film, etc. In addition, a hafnium oxide film, a hafnium oxynitride film, etc. can be used. , hafnium nitride oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, Tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film A zirm film or the like may be used. Also, two or more of the above insulating films may be laminated. A base film may be provided between the plate 151 and the transistor. The base film may also be made of the above-mentioned inorganic insulating material. A membrane may be used.

[0352] Here, organic insulating films often have lower barrier properties than inorganic insulating films. It is preferable that the organic insulating film has an opening near the end of the display device 100D. It is possible to suppress the intrusion of impurities from the end portion of the display device 100D through the organic insulating film. Alternatively, the organic insulating film may be arranged so that its edge is located inside the edge of the display device 100D. An organic insulating film may be formed so that the organic insulating film is not exposed at the edge of the display device 100D. .

[0353] An organic insulating film is suitable for the insulating layer 214 that functions as a planarizing layer. Materials that can be used include acrylic resin, polyimide resin, epoxy resin, polyamide resin, etc. amide resin, polyimide amide resin, siloxane resin, benzocyclobutene resin, pheno resins, and precursors of these resins.

[0354] A protective layer 116 is provided to cover the light emitting element 190B, the light emitting element 190G, and the light receiving / emitting element 190SR. By so doing, water and other contaminants are prevented from entering the light emitting element 190B, the light emitting element 190G, and the light receiving / emitting element 190SR. The intrusion of impurities is suppressed, and the light emitting element 190B, the light emitting element 190G, and the light receiving / emitting element 190 The reliability of SR can be improved.

[0355] In the region 228 shown in FIG. 15, an opening is formed in the insulating layer 214. Even when an organic insulating film is used for the edge layer 214, the display unit 212 is exposed from the outside through the insulating layer 214. Therefore, the reliability of the display device 100D can be improved. It can be improved.

[0356] In a region 228 near the edge of the display device 100D, the insulating layer 214 is opened to form an insulating layer. It is preferable that the edge layer 215 and the protective layer 116 are in contact with each other. It is preferable that the inorganic insulating film of the protective layer 116 and the inorganic insulating film of the protective layer 116 are in contact with each other. This prevents impurities from entering the display unit 162 from the outside via the organic insulating film. This makes it possible to improve the reliability of the display device 100D.

[0357] The protective layer 116 may be a single layer or a laminated structure. The insulating film may have a laminated structure of an organic insulating film and an inorganic insulating film. It is preferable that the ends of the inorganic insulating film extend outward.

[0358] Transistor 241, transistor 245, transistor 246, and transistor 2 47 is a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer , the conductive layer 222a and the conductive layer 222b which function as a source and a drain, and the semiconductor layer 23 1, an insulating layer 213 functioning as a gate insulating layer, and a conductive layer 2 functioning as a gate 23. In this example, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconducting layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0359] The structure of a transistor included in the display device of this embodiment is not particularly limited. Using transistors such as linear type, staggered type, and inverse staggered type In addition, the transistor structure can be either a top gate type or a bottom gate type. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed. This is also fine.

[0360] Transistor 241, transistor 245, transistor 246, and transistor 2 The MOSFET 47 has a structure in which the semiconductor layer in which the channel is formed is sandwiched between two gates. The transistor is driven by connecting the two gates and applying the same signal to them. Alternatively, a potential for controlling the threshold voltage may be applied to one of the two gates. In addition, the threshold voltage of the transistor may be controlled by applying a driving potential to the other side. .

[0361] The crystallinity of the semiconductor material used in the transistor is not particularly limited. Single crystal semiconductor or semiconductor with crystallinity other than single crystal (microcrystalline semiconductor, polycrystalline semiconductor A single crystal semiconductor or a semiconductor having a crystal region in part may be used. It is preferable to use a crystalline semiconductor since this can suppress deterioration of transistor characteristics.

[0362] The semiconductor layer of the transistor preferably contains a metal oxide (also called an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may include silicon. For this purpose, amorphous silicon, crystalline silicon (low-temperature polysilicon, single crystal silicon, etc.) etc.)

[0363] The semiconductor layer may be, for example, a combination of indium and M (where M is gallium, aluminum, silicon, Boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium Rumanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, one or more selected from tantalum, tungsten, and magnesium), zinc, In particular, M is aluminum, gallium, yttrium, and It is preferable that the metal oxide is one or more metals selected from tin.

[0364] In particular, indium (In), gallium (Ga), and zinc (Zn) are used as the semiconductor layer. It is preferable to use an oxide containing IGZO (also referred to as IGZO).

[0365] When the semiconductor layer is an In-M-Zn oxide, the In atoms in the In-M-Zn oxide are The atomic ratio of In to M is preferably equal to or greater than the atomic ratio of M. The atomic ratio of the group elements is In:M:Zn=1:1:1 or a composition close to that. In:M Zn=1:1:1.2 or a composition close thereto, In:M:Zn=2:1:3 or a composition close thereto Nearby compositions, In:M:Zn=3:1:2 or near by compositions, In:M:Zn=4: 2:3 or a composition close thereto, In:M:Zn=4:2:4.1 or a composition close thereto, In:M:Zn=5:1:3 or a composition close to that, In:M:Zn=5:1:6 or The composition in the vicinity thereof, In:M:Zn=5:1:7 or the composition in the vicinity thereof, In:M:Zn= 5:1:8 or a composition close thereto, In:M:Zn=6:1:6 or a composition close thereto, In:M:Zn=5:2:5 or a composition close to that. This includes a range of ±30% of the desired atomic ratio.

[0366] For example, when describing a composition with an atomic ratio of In:Ga:Zn=4:2:3 or a composition close to that In this case, when the atomic ratio of In is 4, the atomic ratio of Ga is 1 to 3, and the atomic ratio of Zn is The atomic ratio is 2 to 4. The atomic ratio is In:Ga:Zn=5:1:6. When describing the composition as being close to or equal to the atomic ratio of Ga when the atomic ratio of In is 5, This includes cases where the ratio is greater than 0.1 and equal to or less than 2, and the ratio of the number of Zn atoms is equal to or greater than 5 and equal to or less than 7. In addition, when describing a composition with an atomic ratio of In:Ga:Zn=1:1:1 or a composition close to that, When the atomic ratio of In is 1, the atomic ratio of Ga is more than 0.1 and is not more than 2, and Z This includes cases where the atomic ratio of n is greater than 0.1 and less than or equal to 2.

[0367] The transistors in the circuit 164 and the transistors in the display portion 162 have the same structure. The circuit 164 may have a plurality of transistors, or may have a different structure. The structures may all be the same, or there may be two or more types. The structures of the multiple transistors may all be the same, or there may be two or more types.

[0368] A connection portion 244 is provided in an area of ​​the substrate 151 where the substrate 152 does not overlap. In the connection portion 244, the wiring 165 is electrically connected to the FPC 172 via the conductive layer 166 and the connection layer 242. The upper surface of the connection portion 244 is made of the same conductive film as the pixel electrode 191. The conductive layer 166 thus obtained is exposed. Electrical connection can be made via the connection layer 242 .

[0369] Various optical members can be arranged on the outside of the substrate 152. Examples include a retardation plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light collecting film. The outside of the substrate 152 is provided with an antistatic film to prevent dust from adhering, and a It also has a water-repellent film that makes it hard to damage the surface, a hard coat film that prevents scratches from occurring during use, and an impact absorbing layer. It may be placed.

[0370] The substrates 151 and 152 are made of glass, quartz, ceramic, sapphire, Resin or the like can be used. The substrate 151 and the substrate 152 are made of a flexible material. This can increase the flexibility of the display device.

[0371] The adhesive layer may be a light-curing adhesive such as an ultraviolet-curing adhesive, a reaction-curing adhesive, or a heat-curing adhesive. Various curing adhesives such as viscoelastic adhesives, anaerobic adhesives, etc. can be used. Epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, E VA (ethylene vinyl acetate) resin, etc. In particular, the moisture permeability of epoxy resin, etc. A material with low adhesion is preferable. Two-part mixed resin may also be used. It may be used.

[0372] The connection layer is made of anisotropic conductive film (ACF). active film), anisotropic conductive paste (ACP) Inductive Paste) can be used.

[0373] The configurations and materials of the light emitting elements 190G and 190B and the light receiving / emitting element 190SR are the same as those described above. Please refer to the description below.

[0374] In addition to the gates, sources and drains of transistors, various wiring and Materials that can be used for conductive layers such as electrodes include aluminum, titanium, chromium, Nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten Examples of the materials include metals such as zinc and alloys that contain these metals as the main components. The film containing the compound may be used as a single layer or as a laminate structure.

[0375] Examples of the light-transmitting conductive material include indium oxide, indium tin oxide, and indium tin oxide. Conductive oxides such as gallium zinc oxide, zinc oxide, zinc oxide containing gallium, or graphite Alternatively, gold, silver, platinum, magnesium, nickel, tungsten, Metallic materials such as zinc, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium Alternatively, a nitride of the metal material (e.g. For example, titanium nitride) may be used. Note that metal materials, alloy materials (or their nitrides) In the case of using a material such as a fluoride, it is preferable to make it thin enough to have light transmission. A laminated film of a material can be used as the conductive layer. For example, a silver-magnesium alloy and an insulator can be used. It is preferable to use a laminated film of dilute tin oxide or the like, since the electrical conductivity can be increased. These include conductive layers such as various wirings and electrodes that constitute the display device, light emitting elements, and light receiving elements. (or a conductive layer that functions as a pixel electrode or a common electrode) of the light emitting element It can be used.

[0376] Examples of insulating materials that can be used for each insulating layer include acrylic resin, epoxy resin, and the like. Resins such as oils, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, acid Examples of suitable insulating materials include inorganic insulating materials such as aluminum oxide.

[0377] [Display device 100E] 16 and 17A show cross-sectional views of the display device 100E. The display device 100E is similar to the display device 100D (FIG. 14). FIG. 16 shows the FPC of the display device 100E. A part of the area including 172, a part of the circuit 164, and a part of the display unit 162 are cut off. 17A shows an example of a cross section of a part of the display unit 162 of the display device 100E. 16 shows an example of a cross section of the display unit 162, particularly the light receiving element 1 shows an example of a cross section of a region including the light emitting element 110 and the light emitting element 190R that emits red light. In FIG. 17A, the display unit 162 includes a light emitting element 190G that emits green light and a light emitting element 190B that emits blue light. 1 shows an example of a cross section of a region including a light emitting element 190B that emits light of a different color.

[0378] The display device 100E shown in FIG. 16 and FIG. 17A has a transistor between the substrate 153 and the substrate 154. Transistor 243, transistor 248, transistor 249, transistor 240, light emission The light receiving element 110 includes an element 190R, a light emitting element 190G, a light emitting element 190B, and a light receiving element 110.

[0379] The resin layer 159 and the common electrode 115 are bonded via an adhesive layer 142, and the display device 1 The 00E uses a solid sealing structure.

[0380] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. and insulating layer 157 are bonded together by adhesive layer 156 .

[0381] The display device 100E is manufactured by first forming an insulating layer 212, each transistor, and a light receiving element. A first fabrication substrate on which the substrate 110, the light emitting elements, etc. are provided, an insulating layer 157, a resin layer 159, The second substrate on which the light-shielding layer 158 and the like are provided is bonded to the second substrate by the adhesive layer 142. Then, the first fabrication substrate is peeled off, and a substrate 153 is attached to the exposed surface, and a second fabrication substrate is attached. By attaching a substrate 154 to the peeled and exposed surface, the first and second fabrication substrates are The formed components are transferred to the substrate 153 and the substrate 154. It is preferable that each of the display device 100E and the display device 100B has flexibility. It can improve sexuality.

[0382] The insulating layer 212 and the insulating layer 157 are respectively formed of the insulating layer 211, the insulating layer 213, and the insulating layer 157. An inorganic insulating film can be used for the edge layer 215.

[0383] The light emitting element 190R includes, from the insulating layer 214b side, a pixel electrode 191, a common layer 112, and a light emitting layer 1 93R, a common layer 114, and a common electrode 115 are laminated in this order. The electrode 191 is connected to the conductive layer 169 through an opening provided in the insulating layer 214b. The conductive layer 169 is connected to the transistor 248 through an opening provided in the insulating layer 214a. The conductive layer 222b is connected to the conductive layer 222b. The pixel electrode 191 is connected to the low resistance region 231n through the hole. The transistor 248 controls the driving of the light emitting element 190R. It has the function of controlling.

[0384] Similarly, the light emitting element 190G includes, from the insulating layer 214b side, a pixel electrode 191, a common layer 112, The light-emitting layer 193G, the common layer 114, and the common electrode 115 are laminated in this order. The pixel electrode 191 is connected to the conductive layer 169 and the conductive layer 222b of the transistor 249 via the conductive layer 169 and the conductive layer 222b of the transistor 249. The pixel electrode 19 is electrically connected to the low resistance region 231n of the transistor 249. 1 is electrically connected to the transistor 249. The transistor 249 is a light-emitting element. It has the function of controlling the drive of 190G.

[0385] The light emitting element 190B includes, from the insulating layer 214b side, a pixel electrode 191, a common layer 112, The light-emitting layer 193B, the common layer 114, and the common electrode 115 are laminated in this order. The pixel electrode 191 is connected to the conductive layer 169 and the conductive layer 222b of the transistor 240 via the conductive layer 169 and the conductive layer 222b of the transistor 240. The pixel electrode 19 is electrically connected to the low resistance region 231n of the transistor 240. 1 is electrically connected to the transistor 240. The transistor 240 is a light-emitting element. It has the function of controlling the drive of 190B.

[0386] The light receiving element 110 includes, from the insulating layer 214b side, a pixel electrode 191, a common layer 112, and an active layer 18. 3, a common layer 114, and a common electrode 115 are laminated in this order.

[0387] The edge of the pixel electrode 191 is covered by a partition wall 216. The common electrode 115 comprises a material that reflects visible light, and the common electrode 115 comprises a material that transmits visible light.

[0388] The light emitted by the light emitting elements 190R, 190G, and 190B is emitted toward the substrate 154. In addition, light is incident on the light receiving element 110 through the substrate 154 and the adhesive layer 142. It is preferable that 54 is made of a material that is highly transparent to visible light.

[0389] Each pixel electrode 191 can be manufactured using the same material and in the same process. , the common layer 114, and the common electrode 115 are connected to the light receiving element 110 and the light emitting elements 190R and 190 The light receiving element 110 and the light emitting element of each color are formed in the active layer 18. The structure of the light-emitting layer is different from that of the light-emitting layer of the device 3. The light receiving element 110 can be built into the display device 100E without significantly increasing the number of processes. do.

[0390] A resin layer 159 and a light-shielding layer 158 are provided on the surface of the insulating layer 157 facing the substrate 153. The resin layer 159 is provided at a position overlapping the light emitting elements 190R, 190G, and 190B. The light-shielding layer 158 is not provided at a position that overlaps the light-receiving element 110. 53 side, the side of the resin layer 159, and the surface of the resin layer 159 facing the substrate 153. The light-shielding layer 158 is disposed at a position where it overlaps the light-receiving element 110 and at a position where it overlaps the light-emitting elements 190R, 190G, The light-shielding layer 158 has openings at positions overlapping with the light-receiving elements 190B. The range in which the element 110 detects light can be controlled. Light is then incident on the light receiving element 110 from the light emitting elements 190R, 190G, and 190B without passing through the object. This prevents direct incidence of light, resulting in a sensor with less noise and higher sensitivity. By providing the resin layer 159, the light shielding layer 158 and the light emitting element of each color can be The distance is shorter than the distance from the light-shielding layer 158 to the light-receiving element 110. It is possible to suppress the viewing angle dependency of the display while reducing the noise of the display. This can improve both the quality and the imaging quality.

[0391] As shown in FIG. 16, the partition wall 216 has an opening between the light receiving element 110 and the light emitting element 190R. The light-shielding layer 219a is provided so as to fill the opening. The light shielding layer 219a is located between the light receiving element 110 and the light emitting element 190R. 190R. This suppresses stray light from entering the light receiving element 110. It is possible.

[0392] The spacer 219b is provided on the partition wall 216, and the light emitting element 190G and the light emitting element 190B The upper surface of the spacer 219b is located between the light-shielding layer 15 and the upper surface of the light-shielding layer 219a. For example, the height (thickness) of the partition wall 216 and the height of the spacer 219b are preferably close to 8. The sum of the thicknesses is preferably greater than the height (thickness) of the light-shielding layer 219a. This makes it easier to fill the adhesive layer 142. As shown in FIG. 17A, the spacer 219 In the area where b overlaps with the light-shielding layer 158, the light-shielding layer 158 is layer).

[0393] A connection portion 244 is provided in the area of ​​the substrate 153 where the substrate 154 does not overlap. In the connection portion 244, the wiring 165 is connected via the conductive layer 167, the conductive layer 166, and the connection layer 242. The conductive layer 167 is electrically connected to the FPC 172. The upper surface of the connection portion 244 is made of the same conductive film as the pixel electrode 191. The conductive layer 166 obtained by processing is exposed. This allows the connection portion 244 and the FPC 17 2 can be electrically connected via a connection layer 242.

[0394] Transistor 243, transistor 248, transistor 249, and transistor 2 40 is a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer 231i and a pair of low resistance regions 231n; The conductive layer 222a connected to one of the resistance regions 231n and the other of the pair of low resistance regions 231n a conductive layer 222b for connecting; an insulating layer 225 for functioning as a gate insulating layer; The insulating layer 211 is a conductive layer 223 that covers the conductive layer 223. The insulating layer 225 is located between the conductive layer 221 and the channel forming region 231i. 223 and the channel forming region 231i.

[0395] The conductive layer 222a and the conductive layer 222b are each formed through an opening in the insulating layer 215. The conductive layer 222a and the conductive layer 222b are connected to the low resistance region 231n. serves as a source and the other serves as a drain.

[0396] 16 and 17A, the insulating layer 225 is formed in the channel forming region 2 of the semiconductor layer 231. 31i and does not overlap with the low resistance region 231n. By processing the insulating layer 225, the structure shown in FIG. 16 and FIG. 17A can be fabricated. 17A, an insulating layer 215 is provided over the insulating layer 225 and the conductive layer 223, and an insulating layer 215 is provided over the insulating layer 225 and the conductive layer 223. Through the openings in the layer 215, the conductive layer 222a and the conductive layer 222b are respectively exposed to the low resistance region 23 In addition, an insulating layer may be provided to cover the transistor.

[0397] On the other hand, FIG. 17B shows an example in which an insulating layer 225 covers the top and side surfaces of the semiconductor layer. The conductive layer 222a and the conductive layer 222b are provided on the insulating layer 225 and the insulating layer 215, respectively. It is connected to the low resistance region 231n through the opening.

[0398] As described above, the display device according to one embodiment of the present invention has two light-emitting elements (or light-receiving elements). The difference in distance to the light receiving element (or light receiving / emitting element) of the two light emitting elements and the overlap The difference in distance to the opening of the light-shielding layer is different from that of the light-receiving element. The light emitting or receiving element is a device that detects the light coming from one of the two light emitting elements in comparison with the light coming from the other. Therefore, for example, in the display device of one embodiment of the present invention, By making a large amount of light coming from a light-emitting element used as a light source incident on a light element or a light-receiving / light-emitting element, This can be done.

[0399] This embodiment mode can be combined with other embodiment modes as appropriate.

[0400] (Embodiment 3) In this embodiment, the present invention can be applied to the OS transistor described in the above embodiment. The following describes the metal oxides.

[0401] The metal oxide preferably contains at least indium or zinc. In addition to these, aluminum, gallium, iridium, and zinc are preferably included. It is preferable that the alloy contains tritium, tin, etc. Also, boron, silicon, titanium, etc. , Iron, Nickel, Germanium, Zirconium, Molybdenum, Lanthanum, Cerium, Neo Selected from zinc, hafnium, tantalum, tungsten, magnesium, cobalt, etc. One or more types may be included.

[0402] Metal oxides can be grown by sputtering, metal organic chemical vapor deposition (MOCVD), (Al Organic Chemical Vapor Deposition) method, etc. Chemical Vapor Deposition (CVD) method and By using atomic layer deposition (ALD) and other methods, It can be formed.

[0403] <Classification of crystal structures> The crystal structure of oxide semiconductors is amorphous (completely amorphous). hous), CAAC (c-axis-aligned crystalline ), nc(nanocrystalline), CAC(cloud-aligned composite, single crystal, and polycrystalline y crystal), etc.

[0404] The crystal structure of the film or substrate was determined by X-ray diffraction (XRD). For example, the Grazing Inversion Diffusion (GIXD) spectrum can be used to evaluate the ionization. -Incidence XRD) measurement is used to evaluate the XRD spectrum. The GIXD method is also known as the thin-film method or the Seemann-Bohlin method. .

[0405] For example, in the case of a quartz glass substrate, the shape of the peak in the XRD spectrum is almost symmetrical. On the other hand, in the case of IGZO films with a crystalline structure, the peak shape of the XRD spectrum is asymmetric. The asymmetric shape of the peak in the XRD spectrum indicates that the film or the substrate is In other words, the shape of the peaks in the XRD spectrum clearly indicates the presence of crystals in the plate. If it is not symmetrical, the film or substrate cannot be said to be in an amorphous state.

[0406] The crystal structure of the film or substrate was also analyzed by nano-beam electron diffraction (NBED). Diffraction patterns observed by electron diffraction (ultra-small For example, the diffraction pattern of a quartz glass substrate can be evaluated by the electron diffraction pattern. A halo was observed in the folding pattern, confirming that the silica glass was in an amorphous state. In addition, the diffraction pattern of the IGZO film formed at room temperature shows spot-like patterns rather than halos. Therefore, the IGZO film formed at room temperature is not crystalline, but amorphous. It is not considered to be in a pure or amorphous state, but rather in an intermediate state, and it cannot be concluded that the crystal is in an amorphous state. do.

[0407] <<Structure of oxide semiconductor>> Note that oxide semiconductors may be classified in a different way from the above when attention is focused on their structures. For example, the oxide semiconductor may be a single-crystal oxide semiconductor, a non-single-crystal oxide semiconductor, or Examples of non-single-crystal oxide semiconductors include the above-mentioned CAAC-OS and n In addition, non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors and pseudo-amorphous oxide semiconductors. Amorphous-like oxide semiconductor (a-like OS) amorphous oxide semiconductors, etc.

[0408] Here, the details of CAAC-OS, nc-OS, and a-like OS mentioned above are , and provide an explanation.

[0409] [CAAC-OS] CAAC-OS has multiple crystalline regions, and the multiple crystalline regions have c-axes oriented in a specific direction. The specific direction is the thickness direction of the CAAC-OS film. , in the normal direction to the surface on which the CAAC-OS film is formed, or in the normal direction to the surface of the CAAC-OS film. A crystalline region is a region in which the atomic arrangement has periodicity. When considered as a child arrangement, a crystalline region is also a region with a uniform lattice arrangement. The OS has a region in which multiple crystal regions are connected in the ab-plane direction, and this region is strained. The distortion may occur when the lattice arrangement is distorted in a region where multiple crystal regions are connected. The area where the orientation of the lattice array changes between an area with one lattice array and an area with a different lattice array. In other words, the CAAC-OS has a c-axis orientation and no clear orientation in the ab-plane direction. It is an oxide semiconductor that has no

[0410] Each of the multiple crystalline regions is made up of one or more minute crystals (maximum diameter 10 When a crystalline region is made up of a single tiny crystal, the crystal size is less than 1 nm. The maximum diameter of the crystalline region is less than 10 nm. When such a crystal region is formed, the size of the crystal region may be approximately several tens of nm.

[0411] In-M-Zn oxide (where element M is aluminum, gallium, yttrium, or sulphur) CAAC-OS is one or more selected from the group consisting of aluminum, titanium, etc. A layer containing element M, zinc (Zn), and oxygen (hereinafter referred to as the In layer) and a layer containing element M, zinc (Zn), and oxygen (hereinafter referred to as the In layer) are A layered crystal structure (also called a layered structure) is formed by stacking a layer having an element (hereinafter, an (M,Zn) layer) and a layer having an element having an element (hereinafter, an (M,Zn) layer). Indium and element M are mutually substitutable. The (M,Zn) layer may contain indium. The In layer contains the element M. The In layer may contain Zn. The layered structure may be, for example, , high-resolution TEM (Transmission Electron Microscop) e) In the image, it is observed as a lattice image.

[0412] For example, when the structure of the CAAC-OS film is analyzed using an XRD device, the θ / 2θ shift In the out-of-plane XRD measurement using a can, two peaks indicating the c-axis orientation were observed. The peak position indicating the c-axis orientation (value of 2θ) is detected at or near θ=31°. ) may vary depending on the type and composition of the metal elements that make up the CAAC-OS.

[0413] For example, in the electron diffraction pattern of the CAAC-OS film, multiple bright spots (spots) Note that one spot and another spot are the electron beams that have passed through the sample. The spot (also called the direct spot) is the center of symmetry, and the observed positions are point-symmetric. do.

[0414] When the crystalline region is observed from the specific direction, the lattice arrangement in the crystalline region is a hexagonal lattice. However, the unit cell is not necessarily a regular hexagon, and may be a non-regular hexagon. The above distortion may have a lattice arrangement such as a pentagon or heptagon. -In the OS, clear grain boundaries were confirmed even in the vicinity of the distortion. In other words, the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This is because the arrangement of oxygen atoms in the CAAC-OS is dense in the ab-plane direction. The metal atoms are replaced by other metals, and the bond distance between the atoms changes. , it is believed that this is because distortion can be tolerated.

[0415] The crystal structure in which clear grain boundaries are observed is called polycrystal. The grain boundaries act as recombination centers, trapping carriers and forming transistor structures. It is highly likely that this will cause a decrease in on-state current and a decrease in field effect mobility. CAAC-OS, which has no visible grain boundaries, has a crystal structure suitable for the semiconductor layer of a transistor. CAAC-OS is one of the crystalline oxides that contain Zn. For example, In-Zn oxide and In-Ga-Zn oxide are In oxides. This is preferable since it can suppress the generation of grain boundaries more effectively than oxides.

[0416] CAAC-OS is an oxide semiconductor with high crystallinity and no clear grain boundaries. Therefore, the CAAC-OS is less susceptible to the decrease in electron mobility caused by grain boundaries. In addition, the crystallinity of an oxide semiconductor may be reduced by the incorporation of impurities or the generation of defects. Therefore, CAAC-OS is an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Therefore, the physical properties of the oxide semiconductor having the CAAC-OS are stable. Therefore, oxide semiconductors having CAAC-OS are resistant to heat and have high reliability. C-OS is stable even under high temperatures (so-called thermal budget) in the manufacturing process. Therefore, using CAAC-OS for OS transistors increases the flexibility of the manufacturing process. It becomes possible.

[0417] [nc-OS] nc-OS is a material that is used in microscopic regions (e.g., regions between 1 nm and 10 nm, especially regions between 1 nm and In other words, the nc-OS has a periodic atomic arrangement in the region of 3 nm or less. The size of the minute crystals is, for example, 1 nm or more and 10 nm or less. Since the size of the crystals is between 1 nm and 3 nm, these very small crystals are also called nanocrystals. In the case of nc-OS, the crystal orientation of different nanocrystals is not regular. Therefore, depending on the analytical method, nc-OS may be considered to be a-like O. In some cases, it may be difficult to distinguish between crystalline oxide semiconductors and amorphous oxide semiconductors. When structural analysis is performed using an RD device, out-of-plan e In the XRD measurement, no peaks indicating crystallinity were detected. Electron diffraction using an electron beam with a probe diameter larger than that of nanocrystals (e.g., 50 nm or more) When performing selected area electron diffraction, a halo-like diffraction pattern is observed. On the other hand, for the nc-OS film, the size of the protons was close to or smaller than that of the nanocrystals. Electron beam diffraction (nanobeam electron When the direct spot is focused on the object, multiple diffraction patterns are generated within a ring-shaped area around the direct spot. In some cases, an electron diffraction pattern is obtained in which spots such as

[0418] [a-like OS] The a-like OS is an oxide semiconductor that has a structure between the nc-OS and the amorphous oxide semiconductor. A-like OS has voids or low density areas. The e-OS has a lower crystallinity than the nc-OS and CAAC-OS. The e-OS has a higher hydrogen concentration in the film than the nc-OS and CAAC-OS.

[0419] <<Oxide semiconductor structure>> Next, the details of the above-mentioned CAC-OS will be explained. Concerning formation.

[0420] [CAC-OS] CAC-OS is a type of metal oxide in which the elements constituting the metal oxide are 0.5 nm to 10 nm in diameter. Preferably, the material is unevenly distributed in a size range of 1 nm to 3 nm or less, or in the vicinity thereof. In the following, it is assumed that one or more metal elements are unevenly distributed in the metal oxide. The region having the metal element has a size of 0.5 nm to 10 nm, preferably 1 nm to 3 nm. A state where the mixture is smaller than m or close to that size is called a mosaic or patch pattern. .

[0421] Furthermore, CAC-OS is a material that is separated into a first region and a second region. The first region has a structure in which the first region is distributed throughout the film (hereinafter, also referred to as a cloud-like structure). ) In other words, the CAC-OS is a mixture of the first and second regions. It is a composite metal oxide having a structure in which

[0422] Here, the I ratio for the metal elements constituting the CAC-OS in the In-Ga-Zn oxide is The atomic ratios of n, Ga, and Zn are expressed as [In], [Ga], and [Zn], respectively. For example, in a CAC-OS made of In-Ga-Zn oxide, the first region is [In] is larger than [In] in the composition of the CAC-OS film. In the region 2, [Ga] is larger than [Ga] in the composition of the CAC-OS film. Alternatively, for example, the first region has a larger [In] than the second region. The first region has a larger Ga than the second region, and the Ga is smaller than the Ga in the first region. In the second region, [Ga] is larger than [Ga] in the first region, and [In] is smaller than [In] in the first region.

[0423] Specifically, the first region is mainly composed of indium oxide, indium zinc oxide, etc. The second region is a region that is a portion of the gallium oxide, gallium zinc oxide, etc. In other words, the first region is called a region in which In is the main component. The second region can be rephrased as a region containing Ga as the main component. It is possible.

[0424] In addition, there are cases where a clear boundary between the first region and the second region cannot be observed. .

[0425] In addition, CAC-OS in In-Ga-Zn oxide is a compound consisting of In, Ga, Zn, and O. In the material composition containing the above, a part of the region is mainly composed of Ga and a part of the region is mainly composed of In. The regions are in a mosaic pattern, and these regions exist randomly. Therefore, it is speculated that CAC-OS has a structure in which metal elements are distributed non-uniformly. do.

[0426] CAC-OS can be formed, for example, by a sputtering method without heating the substrate. In addition, when the CAC-OS is formed by a sputtering method, the following deposition gas is used: Any one selected from an inert gas (typically argon), oxygen gas, and nitrogen gas. In addition, the ratio of the flow rate of oxygen gas to the total flow rate of deposition gas during deposition is The lower the ratio, the more preferable. For example, the flow rate ratio of oxygen gas to the total flow rate of the deposition gas during deposition is is preferably 0% or more and less than 30%, and more preferably 0% or more and 10% or less.

[0427] For example, in the case of CAC-OS using In-Ga-Zn oxide, the energy dispersive X-ray spectroscopy (EDX: Energy Dispersive X-ray spectrometry) The EDX mapping obtained by oscopy revealed that the In-based region ( A structure in which the first region (region 1) and the second region (region 2) mainly composed of Ga are unevenly distributed and mixed. It can be confirmed that the above formula is true.

[0428] Here, the first region is a region having a higher conductivity than the second region. When carriers flow through the region 1, the metal oxide exhibits electrical conductivity. The first region is distributed in a cloud-like shape in the metal oxide, resulting in high field-effect mobility ( μ) can be realized.

[0429] On the other hand, the second region is a region having a higher insulating property than the first region. By distributing these regions in the metal oxide, leakage current can be suppressed.

[0430] Therefore, when the CAC-OS is used in a transistor, the conductivity due to the first region and The insulating property due to the second region acts complementary to the first region, thereby providing a switching function. This function (the ability to turn on / off) can be given to CAC-OS. -OS is a material that has a conductive function in one part and an insulating function in another part. The material as a whole functions as a semiconductor. The conductive function and the insulating function are separated. By doing so, the functions of both can be maximized. By using this in a capacitor, a high on-state current (I on ), high field effect mobility (μ), and good spin A switching operation can be realized.

[0431] In addition, transistors using CAC-OS are highly reliable. The present invention is suitable for various semiconductor devices including display devices.

[0432] The oxide semiconductor has various structures and has different characteristics. The oxide semiconductors in Two or more of AC-OS, nc-OS, and CAAC-OS may be included.

[0433] <Transistor Having Oxide Semiconductor> Next, the case where the oxide semiconductor is used for a transistor will be described.

[0434] By using the oxide semiconductor for a transistor, a transistor with high field-effect mobility can be obtained. In addition, a highly reliable transistor can be realized.

[0435] For the transistor, an oxide semiconductor with a low carrier concentration is preferably used. For example, , the carrier concentration of the oxide semiconductor is 1×10 17 cm -3 Less than or equal to 1×10 15 c m -3 Less than 1×10, more preferably 13 cm -3 Less than or equal to 1×10 11 cm -3 Less than 1×10, more preferably 10 cm -3 Less than 1 x 10 -9 cm - 3 In addition, in order to reduce the carrier concentration of the oxide semiconductor film, The impurity concentration in the semiconductor film may be reduced to reduce the defect state density. A low impurity concentration and a low defect level density are called high purity intrinsic or substantially high purity intrinsic. Note that the oxide semiconductor having a low carrier concentration is referred to as a high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor. In some cases, the oxide semiconductor is called an oxide semiconductor.

[0436] In addition, a highly-purified intrinsic or substantially highly-purified intrinsic oxide semiconductor film has a low density of defect states. Since the density of the trap states is low, the density of the trap states may also be low.

[0437] In addition, the time required for the charge trapped in the trap level of the oxide semiconductor to disappear is Therefore, the trap level density is high. A transistor in which a channel formation region is formed in an oxide semiconductor has unstable electrical characteristics. There may be cases where this occurs.

[0438] Therefore, in order to stabilize the electrical characteristics of a transistor, the impurity concentration in the oxide semiconductor In order to reduce the impurity concentration in the oxide semiconductor, It is preferable to reduce the impurity concentration in the adjacent film. These include alkali metals, alkaline earth metals, iron, nickel, and silicon.

[0439] <Impurities> Here, the influence of each impurity in an oxide semiconductor will be described.

[0440] When oxide semiconductors contain silicon or carbon, which is one of the group 14 elements, they become oxidized. Defect levels are formed in oxide semiconductors. The concentration of silicon and carbon near the interface with the oxide semiconductor (secondary ion mass spectrometry) (SIMS: Secondary Ion Mass Spectrometry) The concentration that can be obtained is 2 x 10 18 atoms / cm 3 Less than or equal to 2 x 10 17 a toms / cm 3 The following applies.

[0441] In addition, when an oxide semiconductor contains an alkali metal or an alkaline earth metal, the defect level is reduced. Therefore, alkali metals or alkaline earth metals A transistor using an oxide semiconductor containing such an element tends to be normally-on. Therefore, the alkali metal or alkaline earth metal in the oxide semiconductor obtained by SIMS The concentration of the genus is 1×10 18 atoms / cm 3 Less than or equal to 2 x 10 16 atoms / cm 3 To the following:

[0442] In addition, when nitrogen is contained in an oxide semiconductor, electrons that serve as carriers are generated, and As a result, the nitrogen-containing oxide semiconductor is easily converted to n-type. The transistor used for the oxide semiconductor tends to be normally on. In addition, when nitrogen is contained, trap states may be formed. Therefore, the electrical properties of the oxide semiconductor obtained by SIMS may become unstable. The nitrogen concentration in 19 atoms / cm 3 Less than 5 x 10 18 ato ms / cm 3 Less than or equal to 1×10 18 atoms / cm 3 The following is more preferable: 5×10 17 atoms / cm 3 To the following:

[0443] In addition, hydrogen contained in oxide semiconductors reacts with oxygen that bonds with metal atoms to form water. When hydrogen enters the oxygen vacancy, the carrier, In some cases, hydrogen atoms are formed by bonding with oxygen atoms that bond with metal atoms. Therefore, it is necessary to use an oxide semiconductor that contains hydrogen. Therefore, the hydrogen in the oxide semiconductor tends to cause a transistor to be normally on. It is preferable that the Si content in the oxide semiconductor is as low as possible. The hydrogen concentration obtained by MS is 1×10 20 atoms / cm 3 Less than 1x, preferably 10 19 atoms / cm 3 less than 5×10 18 atoms / cm 3 less than , and more preferably 1×10 18 atoms / cm 3 Make it less than.

[0444] By using an oxide semiconductor in which impurities are sufficiently reduced for a channel formation region of a transistor, This makes it possible to impart stable electrical characteristics.

[0445] This embodiment mode can be combined with other embodiment modes as appropriate.

[0446] (Embodiment 4) In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS. Reveal.

[0447] The electronic device of one embodiment of the present invention can capture images on a display unit and can also display a display screen that can be used for touch operations (contact or proximity). This will improve the functionality and convenience of electronic devices. can be done.

[0448] As an embodiment of the electronic device of the present invention, for example, a television set, a desktop type For example, notebook type personal computers, computer monitors, digital signage, etc. In addition to electronic devices with relatively large screens such as large video game consoles, pachinko machines, and other large game machines, Digital cameras, digital video cameras, digital photo frames, mobile phones, portable games Examples of such devices include gaming machines, portable information terminals, and audio playback devices.

[0449] The electronic device according to one embodiment of the present invention includes a sensor (force, displacement, position, velocity, acceleration, angular velocity, rotation Numbers, distance, light, liquids, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power , radiation, flow rate, humidity, gradient, vibration, odor or infrared light The present invention may have a function of

[0450] The electronic device according to one embodiment of the present invention can have various functions. Functions for displaying still images, videos, text images, etc. on the display, touch panel function, calendar Functions such as displaying date or time, running various software (programs) a function to read out a program or data recorded on a recording medium; It can have functions etc.

[0451] The electronic device 6500 shown in FIG. 18A is a portable information device that can be used as a smartphone. It is a news terminal.

[0452] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, and a button 6 504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display unit 6502 has a touch panel function.

[0453] The display device described in Embodiment 2 can be applied to the display portion 6502.

[0454] FIG. 18B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0455] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501. In the space surrounded by the protective member 6510, a display panel 6511, an optical member 6512, and a The touch sensor panel 6513, the printed circuit board 6517, the battery 6518, etc. are arranged. do.

[0456] The protective member 6510 includes a display panel 6511, an optical member 6512, and a touch sensor panel. The panel 6513 is secured in place by an adhesive layer (not shown).

[0457] In the area outside the display portion 6502, a part of the display panel 6511 is folded back. The folded part is connected to the FPC6515. IC6516 is mounted on the FPC6515. is connected to the terminal.

[0458] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. This allows for extremely lightweight electronic devices. Because it is extremely thin, it is possible to mount a large-capacity battery (6518) while keeping the thickness of the electronic device to a minimum. Also, a part of the display panel 6511 can be folded back and an FPC 6515 can be attached to the back of the pixel area. By providing a connection portion with the above, an electronic device with a narrow frame can be realized.

[0459] By using the display device described in Embodiment 2 for the display panel 6511, For example, a fingerprint can be captured on the display panel 6511 and fingerprint authentication can be performed. It can be done.

[0460] The display unit 6502 further includes a touch sensor panel 6513. 02 can be given a touch panel function. As a touch sensor panel 6513 Capacitive, resistive, surface acoustic wave, infrared, optical, pressure sensitive, etc. Various methods can be used. Alternatively, the display panel 6511 can be used as a touch sensor. It may be possible to make it function, in which case the touch sensor panel 6513 does not need to be provided.

[0461] FIG. 19A shows an example of a television device. A television device 7100 includes a housing 710 A display unit 7000 is built into the housing 710. This shows a configuration that supports 1.

[0462] The display device described in Embodiment 2 can be applied to the display portion 7000.

[0463] The television device 7100 shown in FIG. 19A is operated by an operation switch provided on the housing 7101. This can be done by a separate remote control 7111 or the display unit 7000. The television may be provided with a touch sensor, and the television may be turned on or off by touching the display unit 7000 with a finger or the like. The remote control 7111 may operate the device 7100. The device may have a display unit that displays information output from the remote control unit 7111. Channel and volume control can be performed using the touch panel or operation keys. The image displayed on the display unit 7000 can be manipulated.

[0464] The television device 7100 includes a receiver and a modem. The receiver can receive general television broadcasts. It can also receive TV broadcasts by wire or by modem. By connecting to a wireless communication network, one-way (sender to receiver) or It is also possible to communicate information in both directions (between sender and receiver, or between receivers). be.

[0465] FIG. 19B shows an example of a notebook personal computer. The computer 7200 includes a housing 7211, a keyboard 7212, and a pointing device 72 13, an external connection port 7214, etc. The display unit 7000 is incorporated in the housing 7211. It is being done.

[0466] The display device described in Embodiment 2 can be applied to the display portion 7000.

[0467] 19C and 19D show an example of digital signage.

[0468] The digital signage 7300 shown in FIG. 19C includes a housing 7301, a display unit 7000, and It also has a speaker 7303, etc. In addition, it has an LED lamp, an operation key (power switch, It can have a variety of devices, including operation switches, connection terminals, sensors, microphones, etc. .

[0469] FIG. 19D shows a digital signage 7400 attached to a cylindrical pole 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of a pillar 7401. Yes.

[0470] 19C and 19D, the display device described in the second embodiment is applied to the display unit 7000. It can be used.

[0471] The larger the display unit 7000, the more information can be displayed at one time. The wider the display unit 7000 is, the more easily it will catch people's attention, and the more effective it will be for advertising, for example. can.

[0472] By applying a touch panel to the display unit 7000, images or videos can be displayed on the display unit 7000. It is preferable because it not only displays the route information but also allows users to operate it intuitively. When used for purposes such as providing information such as road safety or traffic information, This can further improve usability.

[0473] Also, as shown in FIG. 19C and FIG. 19D, a digital signage 7300 or a digital The signage 7400 is a display that is displayed on an information terminal 7311 such as a smartphone carried by a user. It is preferable that the display unit 7411 can be connected to the information terminal 7411 by wireless communication. The advertisement information displayed on the 7000 is displayed on the screen of the information terminal 7311 or the information terminal 7411. In addition, the information terminal 7311 or the information terminal 7411 can be operated. By operating the buttons, the display on the display unit 7000 can be switched.

[0474] In addition, the Digital Signage 7300 or Digital Signage 7400 can be equipped with an information terminal. A game is played using the screen of the information terminal 7311 or the information terminal 7411 as the operation means (controller). This allows an unspecified number of users to participate in the game at the same time and have fun. You can enjoy it.

[0475] The electronic device shown in FIG. 20A to FIG. 20F includes a housing 9000, a display unit 9001, a speaker 9002, and a 003, operation keys 9005 (including a power switch or an operation switch), connection terminals 90 06, Sensor 9007 (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid , magnetic, temperature, chemical, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, (including the ability to sense, detect or measure humidity, gradient, vibration, odor or infrared light) , microphone 9008, etc.

[0476] The electronic devices shown in FIG. 20A to FIG. 20F have various functions. For example, Still images, videos, text images, etc.) on the display, touch panel function, calendar Functions that display date, time, etc., and can be used by various software (programs) Functions for controlling processing, wireless communication functions, and programs or data recorded on recording media The functions of the electronic device are not limited to these. The electronic device may have multiple display units. Also, a camera or the like can be installed in the electronic device to take still images or videos and store them on a recording medium (external or It has the functions of storing the captured images on a memory card (built into the camera) and displaying the captured images on the display unit. Good too.

[0477] The electronic device shown in FIGS. 20A to 20F will be described in detail below.

[0478] FIG. 20A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 is, for example, For example, the portable information terminal 9101 can be used as a smartphone. A connector 9003, a connection terminal 9006, a sensor 9007, etc. may be provided. The 9101 can display text and image information on multiple sides. In addition, information 9051 indicated by a dashed rectangle is It may also be displayed on another surface of the display unit 9001. An example of the information 9051 is an electronic mail. Notifications of incoming e-mails, SNS, phone calls, etc.; subject of e-mails and SNS, sender name, date and time , time, remaining battery power, antenna reception strength, etc. Or, information 9051 is displayed An icon 9050 or the like may be displayed at the position where the icon is displayed.

[0479] FIG. 20B is a perspective view showing a portable information terminal 9102. The portable information terminal 9102 has a display The display unit 9001 has a function of displaying information on three or more surfaces. The example shows how the user can see the information 9053 and the information 9054 on different sides. When the mobile information terminal 9102 is stored in the breast pocket of the clothes, Users can also check the information 9053 displayed in a position that can be observed from above. The display can be checked without taking the mobile information terminal 9102 out of a pocket, and for example, a telephone call can be made. You can decide whether to accept it or not.

[0480] FIG. 20C is a perspective view showing a wristwatch-type mobile information terminal 9200. The display unit 9001 is The display surface is curved, and the display can be performed along the curved display surface. The portable information terminal 9200 can communicate with, for example, a wireless headset. The mobile information terminal 9200 can also be used for hands-free conversation. The 9006 can transmit data to and from other information terminals and can also charge the device. The charging operation may be performed by wireless power supply.

[0481] 20D to 20F are perspective views showing a foldable portable information terminal 9201. FIG. FIG. 20D shows the portable information terminal 9201 in an unfolded state, FIG. 20F shows the portable information terminal 9201 in a folded state, 20E is a perspective view showing a state in the middle of changing from one of FIG. 20D and FIG. 20F to the other. The information terminal 9201 is highly portable when folded and seamless when unfolded. The display area is large, and the display is easy to view. 1 is supported by three housings 9000 connected by hinges 9055. For example, The display unit 9001 can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less.

[0482] This embodiment mode can be combined with other embodiment modes as appropriate. [Explanation of symbols]

[0483] :AZFB1:Wiring, AZFB2:Wiring, AZIN1:Wiring, AZIN1B:Wiring, AZ IN2: Wiring, AZIN2B: Wiring, AZINB1: Wiring, AZINB2: Wiring, C1: Capacity, C2: Capacity, C3: Capacity, C4: Capacity, Cin1: Capacity, Cin2: Capacity, Cin 3: Capacitance, COM1: Wiring, COM2: Wiring, COM3: Wiring, IM1: Input terminal, IM 2: Input terminal, IP1: Input terminal, IP2: Input terminal, L1: Shortest distance, L2: Shortest distance , M1 to M11: transistors, ND1: node, ND1a: node, ND2: node, ND2a: Node, ND3: Node, OUT1: Wiring, OUT2: Wiring, SP1: Signal, SP2: Signal, SW1~SW5: Switch, T10~T16: Time, TB1: Period, TB 2: Period, V1~V5: Wiring, Vb1: Wiring, Vb2: Wiring, VBN1: Wiring, VBN2 : Wiring, VBP1: Wiring, VBP2: Wiring, VCOM1~VCOM3: Potential, VDD1: Wiring, VDD2: Wiring, 1: Input / Output terminal, 2: Input / Output terminal, 3: Input terminal, 3a: Input / Output terminal, 4a: input / output terminal, 5a: control terminal, 5A: OS transistor, 6a: control terminal, 10: display module, 11: source driver, 12: gate driver, 13: gate driver driver, 20: pixel region, 30: pixel, 30a: pixel, 30b: pixel, 31: sub-pixel, 3 1B: sub-pixel, 31G: sub-pixel, 31R: sub-pixel, 31W: sub-pixel, 31X: sub-pixel, 3 2: sub-pixel, 40: circuit, 41: CDS circuit, 42: noise removal circuit, 43: counter circuit 44: latch circuit; 51-55: transistors; 56: comparison circuit; 57: buffer circuit 58: Analog switch; 59: Inverter circuit; 70: Amplifier circuit; 71-7k: Transistor, 80: level shifter circuit, 81-8a: transistors, 100: display device 100A to 100E: display device, 110: light receiving element, 112: common layer, 114: common layer , 115: common electrode, 116: protective layer, 121: light emission, 121B: light, 121G: light, 1 21R: Light, 122: Light, 123: Light, 123a: Stray light, 123b: Stray light, 124: Reflection Light, 131: transistor, 132: transistor, 142: adhesive layer, 151: substrate, 1 52: Substrate, 153: Substrate, 154: Substrate, 155: Adhesive layer, 156: Adhesive layer, 157: Insulating layer, 158: light-shielding layer, 159: resin layer, 159p: opening, 162: display section, 164: Circuit, 165: wiring, 166: conductive layer, 167: conductive layer, 169: conductive layer, 172: FP C, 173: IC, 182: buffer layer, 183: active layer, 184: buffer layer, 190 : Light emitting element, 190B: Light emitting element, 190G: Light emitting element, 190R: Light receiving element, 190 R: light emitting element, 191: pixel electrode, 192: buffer layer, 192B: buffer layer, 192 G: buffer layer, 192R: buffer layer, 193: light-emitting layer, 193B: light-emitting layer, 193G : Light emitting layer, 193R: Light emitting layer, 194: Buffer layer, 194B: Buffer layer, 194G: Buffer layer, 194R: Buffer layer, 200A: Display device, 200B: Display device, 201 : Substrate, 202: Finger, 203: Layer, 204: Layer, 205: Functional layer, 207: Layer, 208: Stylus, 209: substrate, 211: insulating layer, 212: insulating layer, 213: insulating layer, 214 : insulating layer, 214a: insulating layer, 214b: insulating layer, 215: insulating layer, 216: partition wall, 21 9a: light shielding layer, 219b: spacer, 221: conductive layer, 222a: conductive layer, 222b: conductive 223: conductive layer, 225: insulating layer, 228: region, 231: semiconductor layer, 231i: Channel formation region, 231n: low resistance region, 240: transistor, 241: transistor 242: connection layer, 243: transistor, 244: connection portion, 245: transistor, 246: transistor, 247: transistor, 248: transistor, 249: trans register, 261: contact part, 262: fingerprint, 263: imaging range, 266: trajectory, 270B: Light emitting element, 270G: Light emitting element, 270PD: Light receiving element, 270R: Light receiving / emitting element, 270 R: light emitting element, 271: pixel electrode, 273: active layer, 275: common electrode, 280A: display device, 280B: display device, 280C: display device, 281: hole injection layer, 282: hole transport 283: light-emitting layer, 283B: light-emitting layer, 283G: light-emitting layer, 283R: light-emitting layer, 28 4: Electron transport layer, 285: Electron injection layer

Claims

[Claim 1] A read circuit is provided. The read circuit includes a comparison circuit, a first light receiving signal obtained from a first pixel, a second light receiving signal obtained from a second pixel, a ramp signal, and a first potential are applied to the readout circuit; the comparison circuit includes first to eighth transistors, one of a source and a drain of the first transistor is electrically connected to a power supply line; the other of the source and the drain of the first transistor is electrically connected to one of the source and the drain of the second transistor; one of a source and a drain of the third transistor is electrically connected to the power supply line; the other of the source and the drain of the third transistor is electrically connected to one of the source and the drain of the fourth transistor; the other of the source and the drain of the second transistor is electrically connected to one of the source and the drain of the fifth transistor; the other of the source and the drain of the second transistor is electrically connected to one of the source and the drain of the sixth transistor; the other of the source and the drain of the second transistor is electrically connected to one of the source and the drain of the seventh transistor; the other of the source and the drain of the second transistor is electrically connected to one of the source and the drain of the eighth transistor; the other of the source and the drain of the fifth transistor is electrically connected to the other of the source and the drain of the seventh transistor; the other of the source and the drain of the sixth transistor is electrically connected to the other of the source and the drain of the eighth transistor; a gate of the first transistor is electrically connected to a gate of the third transistor; a gate of the second transistor is electrically connected to a gate of the fourth transistor; the ramp signal is input to a gate of the fifth transistor, the first light receiving signal is input to a gate of the sixth transistor; the second light receiving signal is input to a gate of the seventh transistor; the first potential is input to a gate of the eighth transistor; the comparison circuit generates a first composite current using the first light receiving signal and the ramp signal; the comparison circuit generates a second composite current using the second light receiving signal and the first potential; The comparison circuit is controlled so that the first combined current and the second combined current have the same current value.

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