Edge ring for localized delivery of regulated gas

Abstract

An edge ring for a substrate processing system includes an annular body and an annular channel disposed circumferentially about an inner diameter of the annular body. The annular channel includes N distinct sections, where N is an integer greater than 1. The edge ring includes N injection ports disposed circumferentially about the annular body for injecting one or more gases into the N distinct sections of the annular channel, respectively. The edge ring includes a flange extending radially inward from the inner diameter of the annular body. A plurality of slits are disposed in the flange. The slits are in fluid communication with the annular channel and extend radially inward from the annular channel to supply one or more gases.

Description

Technical Field

[0001] [Cross - Reference to Related Applications] This application claims the benefit of U.S. Provisional Application No. 63 / 004,132, filed Apr. 2, 2020, and U.S. Provisional Application No. 63 / 041,694, filed Jun. 19, 2020. These applications are hereby incorporated by reference in their entirety.

[0002] The present disclosure generally relates to substrate processing systems, and more particularly to edge rings for local supply of conditioning gases.

Background Art

[0003] The description of the background art provided herein is for the purpose of generally presenting the context of the present disclosure. The research by the inventors named at the present time, within the scope described in this background art section, cannot be regarded as prior art at the time of filing, whether explicitly or implicitly, in the same way as aspects of the description that cannot be considered prior art against the present disclosure.

[0004] Substrate processing systems typically include a plurality of processing chambers (also called process modules) for performing deposition, etching, and other processes on substrates such as semiconductor wafers. Examples of processes that can be performed on a substrate include, but are not limited to, plasma - enhanced chemical vapor deposition (PECVD), chemically - enhanced plasma vapor deposition (CEPVD), sputtering physical vapor deposition (PVD), atomic layer deposition (ALD), and plasma - enhanced ALD (PEALD). Further examples of processes that can be performed on a substrate include, but are not limited to, etching (e.g., chemical etching, plasma etching, reactive ion etching, etc.), and cleaning processes.

[0005] During processing, the substrate is placed on substrate supports such as pedestals and electrostatic chucks (ESCs) within the processing chamber of the substrate processing system. A computer-controlled robot typically transports the substrate from one processing chamber to another in the order in which it should be processed. During deposition, a gas mixture containing one or more precursors is introduced into the processing chamber, and plasma impacts it to activate a chemical reaction. During etching, a gas mixture containing etching gas is introduced into the processing chamber, and plasma impacts it to activate a chemical reaction. The processing chamber is periodically cleaned by supplying cleaning gas into it and causing plasma impacts. [Overview of the project]

[0006] The edge ring of the substrate processing system includes an annular body and an annular channel arranged circumferentially along its inner diameter. The annular channel contains N distinct sections, where N is an integer greater than 1. The edge ring includes N injection ports arranged circumferentially in the annular body for injecting one or more gases into each of the N distinct sections of the annular channel. The edge ring includes a flange extending radially inward from the inner diameter of the annular body. The flange has several slits. These slits are in fluid communication with the annular channel and extend radially inward from the annular channel to supply one or more gases.

[0007] In other features, the multiple slits are configured to supply one or more gases to the upper periphery of the substrate support assembly and to the outer edges of the substrate placed in the substrate support assembly during substrate processing in the substrate processing system.

[0008] In other features, a circular channel contains N partitioning blocks that divide the circular channel into N distinct sections.

[0009] Other features include the fact that the N injection ports are equidistant from each other, and each of the N partition blocks is located between two of the N injection ports and is equidistant from these two of the N injection ports.

[0010] Another feature is that the outer surface of the top of the annular body is close to the exhaust port of the substrate processing system.

[0011] In other features, the edge ring is made from at least one of silicon and silicon carbide.

[0012] In addition, the system comprises an edge ring having N injection ports (where N is an integer greater than 1) and is configured to selectively supply one or more gases. The system includes a gas supply system configured to supply one or more gases to the N injection ports.

[0013] Other features include an edge ring containing an annular channel arranged circumferentially along the inner diameter of the edge ring. The annular channel contains N distinct sections. N injection ports are arranged circumferentially on the edge ring to inject one or more gases into each of the N distinct sections of the annular channel. The edge ring contains a flange extending radially inward from the inner diameter of the edge ring. The flange has several slits. These slits are in fluid communication with the annular channel and extend radially inward from the annular channel to supply one or more gases.

[0014] Other features include multiple slits configured to supply one or more gases to the upper periphery of the substrate support assembly and to the outer edges of the substrate placed in the substrate support assembly during substrate processing.

[0015] In other features, the annular channel includes N dividing blocks that divide the annular channel into N different sections. The N injection ports are equidistant from each other. Each of the N dividing blocks is disposed between two of the N injection ports and is equidistant from these two of the N injection ports.

[0016] In other features, the gas supply system supplies the same gas among one or more of the above-mentioned gases to the N injection ports.

[0017] In other features, the gas supply system supplies the same gas among one or more of the above-mentioned gases to the N injection ports at the same flow rate.

[0018] In other features, the gas supply system supplies the same gas among one or more of the above-mentioned gases to the N injection ports at different flow rates.

[0019] In other features, the gas supply system supplies M (M is an integer satisfying 1 < M ≤ N) of the one or more of the above-mentioned gases to the N injection ports.

[0020] In other features, the gas supply system supplies M (M is an integer satisfying 1 < M ≤ N) of the one or more of the above-mentioned gases to the N injection ports at the same flow rate.

[0021] In other features, the gas supply system supplies M (M is an integer satisfying 1 < M ≤ N) of the one or more of the above-mentioned gases to the N injection ports at different flow rates.

[0022] In other features, one or more of the gases include one or more of a reactive gas and an inert gas.

[0023] In other features, the system further includes a substrate support assembly configured to support a substrate including a semiconductor wafer having a lower side. One or more of the gases are sent to a region proximate to the lower side of the semiconductor wafer.

[0024] In other features, one or more gases remove etching by-products accumulated under the semiconductor wafer during processing.

[0025] In other features, the system further includes a substrate support assembly configured to support a substrate including the semiconductor wafer. Since one or more gases are supplied close to the periphery of the semiconductor wafer, radial diffusion can be suppressed and the radial uniformity of the edge can be improved.

[0026] In other features, the system includes a processing chamber having one or more components. One or more gases precoat at least one of the one or more components.

[0027] In other features, the system further includes a substrate support assembly configured to support a substrate including the semiconductor wafer. One or more gases provide a dilution zone for diluting radicals diffused under the periphery of the semiconductor wafer and between the edge ring and the substrate support assembly.

[0028] In other features, the system further includes a substrate support assembly configured to support a substrate including a semiconductor wafer having a lower side. One or more gases are used to form a ring on the lower side of the semiconductor wafer. The ring is used to determine whether the semiconductor wafer is at the center of the substrate support assembly.

[0029] In other features, the system further includes a substrate support assembly configured to support a substrate including the semiconductor wafer. One or more gases clean the region of the substrate support assembly under the periphery of the semiconductor wafer.

[0030] In other features, the gas supply system includes a plurality of gas sources for supplying one or more gases and a plurality of valves associated with the plurality of gas sources and N injection ports. The system further includes a controller configured to control the plurality of valves to selectively supply one or more gases to the N injection ports at one or more flow rates.

[0031] Yet another feature is a method that includes disposing an edge ring around a periphery of a substrate support assembly of a processing chamber. The edge ring includes an annular channel that is segmented into N (where N is an integer greater than 1) different sections. The method includes supplying one or more gases to each of the N different sections of the annular channel via N injection ports disposed circumferentially of the edge ring. The method includes supplying one or more gases under an upper periphery of the substrate support assembly and under an outer edge of a substrate disposed on the substrate support assembly via a slit of a flange that extends radially inward from an inner diameter of the edge ring during processing of the substrate in the processing chamber.

[0032] In other features, the method further includes supplying one or more gases at the same flow rate and adjusting process uniformity at an outer edge of the substrate.

[0033] In other features, the method further includes supplying one or more gases at different flow rates and compensating for azimuthal process non-uniformity at an outer edge of the substrate.

[0034] In other features, the substrate includes a semiconductor wafer, the process includes an etching process, the one or more gases include a reactive gas, and the method further includes supplying the reactive gas from the edge ring during the etching process to prevent accumulation of material under an outer edge of the substrate.

[0035] Other features include the substrate comprising a semiconductor wafer, the process comprising an etching process, one or more gases comprising an inert gas, and the method further comprising supplying the inert gas from the edge ring during the etching process to protect the area of ​​the substrate support assembly during the etching process.

[0036] Other features include the substrate comprising a cleaning wafer, the process comprising a cleaning process, one or more gases comprising an inert gas, and the method further comprising supplying the inert gas from the edge ring during the cleaning process to protect components of the processing chamber adjacent to the edge ring from wear during the cleaning process.

[0037] Other features include: the substrate includes a cleaning wafer; the process includes a cleaning process; one or more gases include cleaning gases; and the method further includes supplying cleaning gases from an edge ring during the cleaning process to clean components of the processing chamber adjacent to the edge ring during the cleaning process.

[0038] Other features of the method further include depositing material in a pattern beneath the outer edge of the substrate using one or more gases, and determining whether the substrate is at the center of a substrate support assembly based on whether the pattern is concentric with the center of the substrate.

[0039] In other features, the method further includes supplying one or more gases from the edge ring to deposit material on the outer edge of the substrate.

[0040] In other features, the method further includes supplying one or more gases from the edge ring to coat components of the processing chamber adjacent to the edge ring.

[0041] In other features, the method further includes supplying one or more gases at the same flow rate to N different sections of an annular channel via N injection ports.

[0042] In other features, the method further includes supplying one or more gases at different flow rates to N different sections of an annular channel via N injection ports.

[0043] In other features, the method further includes supplying a first gas from one or more gases at a first flow rate through a first port from N injection ports, and supplying a second gas from one or more gases at a second flow rate through a second port from N injection ports.

[0044] In other characteristics, the first gas contains a reactive gas, and the second gas contains an inert gas.

[0045] In other characteristics, the first gas contains the first reactive gas, and the second gas contains the second reactive gas.

[0046] Further scope of application of this disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are for illustrative purposes only and do not limit the scope of this disclosure. [Brief explanation of the drawing]

[0047] This disclosure will be better understood through the detailed description and the accompanying drawings described below.

[0048] [Figure 1] Figure 1 shows an example of a substrate processing system including a processing chamber.

[0049] [Figure 2A] Figure 2A is a perspective view of the edge ring relating to this disclosure.

[0050] [Figure 2B] Figure 2B is a plan view of the edge ring according to this disclosure.

[0051] [Figure 2C]Figure 2C shows various features of the edge ring according to this disclosure. [Figure 2D] Figure 2D shows various features of the edge ring relating to this disclosure. [Figure 2E] Figure 2E shows various features of the edge ring according to this disclosure. [Figure 2F] Figure 2F shows various features of the edge ring according to this disclosure. [Figure 2G] Figure 2G shows various features of the edge ring according to this disclosure.

[0052] [Figure 3A] Figure 3A shows an edge ring used in conjunction with the substrate support assembly according to this disclosure.

[0053] [Figure 3B] Figure 3B shows an example of a gas supply system used in conjunction with the edge ring described herein.

[0054] [Figure 3C] Figure 3C shows an example of the use of an edge ring in a substrate processing system according to this disclosure. [Figure 3D] Figure 3D shows an example of the use of an edge ring in a substrate processing system according to this disclosure. [Figure 3E] Figure 3E shows an example of the use of an edge ring in a substrate processing system according to this disclosure.

[0055] [Figure 4] Figure 4 shows a comparison of processing results when the regulating gas is supplied from the edge ring according to this disclosure and when the regulating gas is supplied from the top of the processing chamber.

[0056] In drawings, reference numbers may be reused to represent similar and / or identical elements. [Modes for carrying out the invention]

[0057] Process gases and precursors are typically supplied to the wafer surface from the top of the processing chamber. For example, in dielectric etching tools, the process gas is supplied from a showerhead designed to deliver the process gas through the upper electrode of the processing chamber. In these tools, the supply of reactants and process gases to the wafer surface depends on factors including the gap between the showerhead and the wafer surface, gas flow rate and pressure, and the confinement mechanism. Because the gas diffuses along the gap, if the gas is supplied at the edge of the wafer, it will have some effect on the processing results at the center of the wafer.

[0058] Currently, edge-controlling gas is supplied from the top of the processing chamber via a showerhead. The diffusion length scale in this feature results in a process impact across the entire wafer and also depends on the wafer gap. Furthermore, the control gas injected from the upper electrode affects both the upper and lower electrodes of the processing chamber. However, instead, a more localized gas control knob could be realized to provide a localized impact on the wafer while minimizing the impact on the surface of the upper electrode.

[0059] This disclosure provides an edge ring that can locally supply a regulating gas to the wafer edge by providing a gas supply path directly to the wafer bevel. The edge ring can deliver the regulating gas below the wafer bevel, near the gas pump-out (exhaust) path of the reactor's processing area. This localized supply of the regulating gas effectively reduces the diffusion length scale, resulting in a more localized effect of the regulating gas on the process. Specifically, the edge ring locally injects the regulating gas at the outermost edge / bevel of the wafer from below, rather than from the top of the reactor. In this way, the edge ring achieves a localized gas regulating knob at the wafer edge during processing while suppressing sensitivity to the wafer gap.

[0060] As detailed below, using a regulating gas during wafer processing can prevent the accumulation of polymer byproducts on the underside of the wafer bevel. In mounting with radially symmetrical features, the regulating gas can be used to adjust the radial uniformity of the outermost edge at different length scales compared to regulating gas injected from a showerhead. In some mounting configurations, the radial gas flow can also be unevenly dispersed to compensate for edge-dominant orientational non-uniformity during processing. Furthermore, this regulating gas feature can be utilized to improve cleaning efficiency at the edges and edge rings of the ESC in waferless autocleaning (WAC) and coated wafer autocleaning (CWAC) sequences. In addition, the injected gas or gas mixture can be used for localized chemical deposition on the wafer bevel and edge ring. Inert gases can also be used to provide a buffer / dilution zone in areas of the ESC that are susceptible to radical attack during processing, and / or to protect components that have a high rate of wear during cleaning. Regulating gases can also be injected to etch the underside of the wafer bevel, forming patterns useful for wafer placement / centering, as described below.

[0061] By providing the regulating gas according to this disclosure, the diffusion length can be shortened, and the processing regulating capability can be made more localized to the wafer edge. The regulating gas can provide a highly localized source of radicals that can be used for cleaning wafer bevels while minimizing the impact on the wafer surface during cleaning and wafer processing. The effective radius of the regulating gas supply can be adjusted by changing the gas flow to the wafer edge. Furthermore, the characteristics of this regulating gas can also be utilized to selectively clean or deposit (pre-coat) material on edge rings or quartz bonding rings without significantly affecting the film on the upper electrode.

[0062] The various types of gas injection described above, as detailed below with reference to Figures 3A-3E, are made possible by the fact that the edge ring of this disclosure is divided into multiple sections, each containing an injection port. Using these injection ports, one or more gases can be injected into each section of the edge ring at varying flow rates. These and other features of this disclosure are described in detail below.

[0063] This disclosure is structured as follows. Figure 1 shows an example of a substrate processing system including a processing chamber in which the edge ring of this disclosure can be used. Figures 2A to 2G show various diagrams and features of the edge ring according to this disclosure. Figures 3A to 3E show the use of the edge ring according to this disclosure. Figure 4 shows that when the regulating gas is supplied from the edge ring according to this disclosure, better results are obtained than when the regulating gas is supplied from the top of the processing chamber.

[0064] Figure 1 shows an example of a substrate processing system 100, which includes a processing chamber 102 configured to generate capacitively coupled plasma. The processing chamber 102 surrounds the other components of the substrate processing system 100 and has a high-frequency plasma (if used). The processing chamber 102 has an upper electrode 104 and an electrostatic chuck (ESC) 106 or other type of substrate support. During operation, the substrate 108 is placed on the ESC 106.

[0065] For example, the upper electrode 104 may include a gas distribution device 110, such as a showerhead, for introducing and distributing process gas. The gas distribution device 110 may include a stem portion having one end connected to the top surface of the processing chamber 102. The base portion of the showerhead is generally cylindrical and extends radially outward from the opposite end of the stem portion, spaced apart from the top surface of the processing chamber 102. The surface of the base portion of the showerhead facing the substrate, or the faceplate, includes a plurality of holes through which vaporized precursor, process gas, cleaning gas, or purge gas passes. Alternatively, the upper electrode 104 may include a conductive plate, and the gas may be introduced by another method.

[0066] The ESC106 includes a base plate 112 that acts as a lower electrode. The base plate 112 supports a heating plate 114, which may correspond to a ceramic multi-zone heating plate. A thermal resistance layer 116 may be disposed between the heating plate 114 and the base plate 112. The base plate 112 may include one or more channels 118 for circulating a coolant through the base plate 112.

[0067] When plasma is used, the RF generation system (or RF source) 120 generates an RF voltage and outputs it to either the upper electrode 104 or the lower electrode (e.g., the base plate 112 of the ESC 106). The other of the upper electrode 104 and the base plate 112 may be DC grounded, AC grounded, or ungrounded. For example, the RF generation system 120 may include an RF generator 122 that generates RF power supplied to the upper electrode 104 or the base plate 112 by a matching and distribution network 124. In other examples not shown, the plasma may be generated inductively or remotely and supplied to the processing chamber 102.

[0068] The gas supply system 130 includes one or more gas sources 132-1, 132-2, ... 132-N (collectively referred to as gas source 132, where N is an integer greater than 0). The gas source 132 is connected to the manifold 140 by valves 134-1, 134-2, ... 134-N (collectively referred to as valve 134) and mass flow controllers 136-1, 136-2, ... 136-N (collectively referred to as mass flow controller 136). The steam supply system 142 supplies vaporized precursor to the manifold 140 or another manifold (not shown) connected to the processing chamber 102. The output of the manifold 140 is supplied to the processing chamber 102. The gas source 132 may supply process gas, cleaning gas, and / or purge gas.

[0069] The temperature controller 150 may be connected to a plurality of thermal control elements (TCEs) 152 located within the heating plate 114. The temperature controller 150 may be used to control the temperatures of the ESC 106 and the substrate 108 by controlling the plurality of TCEs 152. The temperature controller 150 may control the flow of coolant through the channel 118 by communicating with the coolant assembly 154. For example, the coolant assembly 154 may include a coolant pump, a reservoir, and one or more temperature sensors (not shown). The temperature controller 150 operates the coolant assembly 154 to selectively flow coolant through the channel 118 and cool the ESC 106. Valves 156 and pumps 158 may be used to discharge reactants from the processing chamber 102. The system controller 160 controls the components of the substrate processing system 100.

[0070] Figures 2A to 2G show various diagrams and features of the edge ring 200 according to this disclosure. Figure 2A shows a perspective view of the edge ring 200. Figure 2B shows a plan view of the edge ring 200. Figures 2C to 2G show the features of the edge ring 200 in detail.

[0071] In Figures 2A and 2B, the edge ring 200 includes an annular channel 202. The annular channel 202 is not completely cut along the entire circumference of the edge ring 200. Instead, the annular channel 202 is divided into individual, distinct sections that are not in fluid communication with each other, as described below. Figure 2E shows a cross-section of the annular channel 202.

[0072] The edge ring 200 includes a plurality of injection ports 204-1, 204-2, and 204-3 (collectively referred to as injection ports 204) arranged along the periphery or outer circumference (circumference) of the edge ring 200. As will be detailed later, one or more gases can be injected into the annular channel 202 through the injection ports 204. Figure 2D is an additional diagram showing one of the injection ports 204.

[0073] Although three injection ports are illustrated as an example, the edge ring 200 can contain any number of injection ports. For example, if the edge ring 200 contains two injection ports, these injection ports may be positioned radially opposite to each other along the perimeter of the edge ring 200. For example, if the edge ring 200 contains two or more injection ports, these injection ports may be distributed symmetrically around the edge ring 200. For example, if the edge ring 200 contains three injection ports, these injection ports may form the vertices of an equilateral triangle arranged along the perimeter of the edge ring 200. Alternatively, these three injection ports may form the vertices of an isosceles triangle arranged along the perimeter of the edge ring 200. For example, if the edge ring 200 contains four injection ports, these injection ports may form the vertices of a quadrilateral arranged along the perimeter of the edge ring 200. Alternatively, for example, these four injection ports may form the vertices of a rectangle or rhombus arranged along the perimeter of the edge ring 200. Many other geometric arrangements are possible for the injection ports 204, which are positioned along the perimeter of the edge ring 200.

[0074] The annular channel 202 is divided into multiple discontinuous sections (also called parts or partitions) by partition blocks (see element 206 in Figure 2C) placed (e.g., embedded) within the annular channel 202. The number of partition blocks within the annular channel 202 and the number of sections of the annular channel 202 are the same as the number of injection ports 204. For example, since three injection ports 204 are shown in Figures 2A and 2B, the annular channel 202 is divided into three sections 207-1, 207-2, and 207-3 (collectively referred to as section 207) by three partition blocks 206-1, 206-2, and 206-3 (collectively referred to as partition block 206).

[0075] The division blocks 206 have a similar geometric arrangement to the injection ports 204. The division blocks 206 are equidistant from the injection ports 204 and from each other. For example, in the examples shown in Figures 2A and 2B, since the three injection ports 204 are spaced 120 degrees apart, the three division blocks 206 are also spaced 120 degrees apart from each other and 60 degrees apart from the three injection ports 204. Each division block 206 is equidistant from the injection ports 204 on either side of it. In the examples shown in Figures 2A and 2B, the three division blocks 206 are located at the vertices of an equilateral triangle, just like the three injection ports 204 are located at the vertices of an equilateral triangle.

[0076] The edge ring 200 includes a flange 210 extending radially inward (i.e., toward the center of the edge ring 200) from the inner diameter of the edge ring 200. The flange 210 is in fluid communication with the annular channel 202 and includes a number of slits 208 extending radially inward from the annular channel 202. One or more gases injected into the injection port 204 enter each section 207 of the annular channel 202 and exit through the slits 208 associated with these sections 207 of the annular channel 202. Figures 2C and 2D are additional diagrams showing one of the slits 208. Figures 2F and 2G are diagrams showing one of the slits 208 in detail.

[0077] For example, the edge ring 200 can be made from silicon and silicon carbide. Although silicon is difficult to machine, the edge ring 200 can be made from silicon, which is preferable if the other components of the processing chamber are also made of silicon. In general, the edge ring can be made from machinable ceramic or non-ceramic materials used in the manufacture of the components of the processing chamber. The material can be selected depending on the process performed in the processing chamber and the type of substrate processing tool used.

[0078] Figures 3A to 3E illustrate the use of the edge ring 200 according to this disclosure. Figure 3A shows gas supply using the edge ring 200. Figure 3B shows a gas supply system supplying one or more gases to the edge ring 200. Figures 3C and 3D illustrate edge uniformity control at the outermost edge using the edge ring 200. Figure 3E shows an inert gas barrier created using the edge ring 200 to delay radical attack on the ESC.

[0079] Figure 3A shows an example of a substrate support assembly 300 (e.g., ESC106 shown in Figure 1) including a base plate 302 (e.g., base plate 112 shown in Figure 1) for supporting a wafer 304 (e.g., substrate 108 shown in Figure 1). Although omitted for simplification of the illustration, the base plate 302 includes a ceramic / top layer that supports the wafer 304. A gas supply system 303 (e.g., gas supply system 130 shown in Figure 1) supplies one or more gases to the edge ring 200. Figure 3B shows an example of the connection between the gas supply system 303 and the edge ring 200.

[0080] The edge ring 200 supplies regulating gas, as shown in 306. The gas supply point from the edge ring 200 to the underside of the wafer 304 is close to the pump-out or exhaust path of the processing chamber, as shown in 308, which helps to highly localize (i.e., restrict to the wafer edge) the gas supply from the edge ring 200 to the wafer edge, as shown in 306.

[0081] Figure 3B shows a gas supply system 303. The gas supply system 303 includes a plurality of gas sources 350, a plurality of valves 352, a plurality of mass flow controllers 354, and a controller 356 (for example, controller 160 shown in Figure 1). The gas sources 350, valves 352, and mass flow controllers 354 may be the same as the gas sources 132, valves 134, and mass flow controllers 136 shown in Figure 1. The gas sources 350 can supply one or more regulating gases, inert gases, and other gases as described later. The controllers 356 control the valves 352 and mass flow controllers 354 to supply the same type of gas, different gases, or gas mixtures to the injection port 204 of the edge ring 200 at similar or different flow rates and pressures, as described later.

[0082] During wafer processing in a processing chamber (for example, processing chamber 102 shown in Figure 1), the back surface of wafer 304 is not exposed to direct ion bombardment by plasma (not shown), and therefore polymer or other types of etching byproduct residues tend to accumulate on the back surface of wafer 304. For example, reactants and radicals accumulated on the underside of the wafer bevel are not etched, causing ring-shaped deposition on the underside of the wafer bevel. This problem can be solved in various ways.

[0083] For example, the gas injected from the edge ring 200 can be selected to chemically react with the material accumulated on the underside of the wafer bevel. For instance, the gas may include a reactive gas. Alternatively, the gas injected from the edge ring 200 may include an inert gas that dilutes or reduces the concentration of the material, preventing its accumulation on the underside of the wafer bevel. This injected inert gas also does not interfere with the ongoing processes taking place in the processing chamber. In this way, one or more gases locally injected from the edge ring 200 can control chemical phenomena or reactions near the underside of the wafer bevel without affecting the ongoing processes in the processing chamber, thereby preventing the deposition of etching byproducts on the underside of the wafer bevel.

[0084] Figures 3C and 3D show a top plate 310 positioned above the substrate support assembly 300 in a processing chamber (e.g., processing chamber 102 shown in Figure 1). A shower head (e.g., shower head 104 shown in Figure 1) is positioned on the top plate 310. Typically, the shower head and wafer 304 within the top plate 310 are at a distance such that the gas supplied from the shower head to the wafer 304 diffuses radially between the shower head and the wafer 304, as shown by 312 in Figure 3B.

[0085] A notable point is that the distance between the gas injection point from the edge ring 200 and the wafer edge is significantly smaller than the distance between the showerhead on the top plate 310 and the wafer 304. By reducing the distance between the gas injection point from the edge ring 200 and the wafer edge, the degree of radial diffusion near the wafer edge can be reduced, as shown in 314 of Figure 3D. Because diffusion can be controlled in this way, the radial uniformity of the outermost edge can be improved by injecting the regulating gas from the edge ring 200 closer to the wafer edge. In other words, by moving the gas injection point from the edge ring 200 closer to the wafer edge, non-uniformity due to diffusion near the wafer edge can be reduced.

[0086] By controlling the valve 352 and the mass flow controller 354 using the controller 356, the gas flow can be distributed uniformly or non-uniformly radially from the edge ring 200. For example, etching gas can be injected uniformly (i.e., symmetrically in the radial direction) through the injection port 204 to inject etching gas of the same concentration over the entire azimuthal periphery of the edge ring 200. Alternatively, etching gas can be injected non-uniformly (i.e., asymmetrically in the radial direction) through the injection port 204 to supply different amounts of etching gas to different regions around the edge ring 200. For example, the flow rate of etching gas passing through each injection port 204 can be controlled individually.

[0087] Furthermore, different gases can be selectively injected through the injection port 204. To address various heterogeneity problems, including orthographic heterogeneity, different gases can be injected from the injection port 204 at different flow rates. For example, the same (i.e., a single) gas can be injected through the injection port 204 at the same or different flow rates. Alternatively, for example, two or more different gases may be injected from each injection port 204 at the same or different flow rates. Examples of different gases include combinations of different reactive gases, or combinations of inert and reactive gases.

[0088] Gas injection via the edge ring 200 can be applied to other uses. For example, in CWAC, the areas under the wafer that protrude from the substrate support assembly 300 are difficult to clean. These areas can be cleaned using one or more gases injected through the edge ring 200. Furthermore, in some processing chambers, some of the components of the processing chamber may be pre-coated. Pre-coating can be performed by injecting gas through the edge ring 200.

[0089] Figure 3E shows that, as indicated by 318, injecting an inert gas through the edge ring 200 can provide a buffer or dilution zone for diluting radicals that may diffuse under the wafer 304 and between the edge ring 200 and the substrate support assembly 300. These radicals may, for example, attack the bond between the substrate support assembly 300 and the base plate 302, as shown by 320. By diluting these radicals with an inert gas injected through the edge ring 200, the attack can be delayed, minimized, or prevented. Purge of radicals from such gaps can be performed during wafer processing, during cleaning of the processing chamber (this step may be a separate purging step), or while the processing chamber is idling (this may be a separate purging step).

[0090] Furthermore, some components of the processing chamber near the edge ring 200 can be selectively protected (e.g., pre-coated) and / or cleaned using an edge ring gas injection method. For example, during the chamber cleaning process, some components may experience significant wear. Excessive wear of such components during the cleaning process can be prevented by using the dilution method described above. Additionally, a preferential protection method can be employed during the cleaning process, injecting an inert gas into areas where components need protection. Conversely, a reactive gas can be injected to enhance cleaning in areas where components cannot be adequately cleaned.

[0091] Referring to Figures 3A-3E, the various types of gas injection described above are made possible because the edge ring is divided into multiple sections 207, each containing an injection port 204. Furthermore, the gas supply system 303 can supply different gases in the different ways described above using the valve 352 and the mass flow controller 354, thus enabling various types of gas injection.

[0092] When placing a wafer 304 on a substrate support assembly 300 during processing, the wafer 304 must be centered on the substrate support assembly 300. Using the edge ring gas injection system described above, material can be deposited in the area under the wafer 304 that protrudes from the substrate support assembly 300. This deposition forms a ring on the underside of the wafer 304. By examining this ring, it is possible to confirm whether the wafer 304 is centered on the substrate support assembly 300. If the ring is concentric with the center of the wafer 304, then the wafer 304 is centered on the substrate support assembly 300.

[0093] Figure 4 shows a comparison of processing results when the regulating gas is supplied from the edge ring 200 and when it is supplied from the top of the processing chamber. This figure shows that supplying the regulating gas from the edge ring 200 yields better results than supplying it from the top of the processing chamber.

[0094] The foregoing description is essentially illustrative and is not intended to limit the disclosure, its application, or its use. The broad teachings of this disclosure can be implemented in various forms. Therefore, other variations of this disclosure are evident from the drawings, specification, and the following claims, and although this disclosure includes certain examples, the true scope of this disclosure is not limited to such specific examples.

[0095] It should be understood that one or more steps within a particular method may be performed in a different order (or simultaneously) without altering the principles of the Disclosure. Furthermore, while each embodiment is described above as having specific features, any one or more of those features described with respect to each embodiment of the Disclosure can be implemented using and / or combined with features of any other embodiment, even if such combination is not explicitly described. In other words, the embodiments described above are not mutually exclusive, and each permutation of combining one or more embodiments with one another falls within the scope of the Disclosure.

[0096] The spatial and functional relationships between each element (e.g., module, circuit element, semiconductor layer, etc.) are described using various terms such as "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "disposed." Furthermore, where the relationship between the first and second elements is described in the above disclosure, unless explicitly described as "direct," that relationship may be a direct relationship in which there are no other intervening elements between the first and second elements, or an indirect relationship in which one or more intervening elements (spatially or functionally) exist between the first and second elements. Where used herein, the expression "at least one of A, B, and C" should be interpreted as meaning a logic (A or B or C) using a non-exclusive logic OR, and not as "at least one of A, at least one of B, and at least one of C."

[0097] In some implementations, the controller is part of a system that may be part of the examples described above. The system may comprise semiconductor processing equipment including one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (such as a wafer base or gas flow system). These systems may be integrated with electronic equipment to control their operation before, during, and after processing of semiconductor wafers or substrates. The electronic equipment may also be referred to as a “controller” that enables control of various components or sub-parts of one or more systems.

[0098] Depending on the processing requirements and / or the type of system, the controller may be programmed to control any of the processes disclosed herein, including the supply of processing gas, temperature setting (e.g., heating and / or cooling), pressure setting, vacuum setting, power setting, radio frequency (RF) generator setting, RF matching circuit setting, frequency setting, flow rate setting, fluid supply setting, position and operation setting, loading and unloading wafers into and out of tools, and loading and unloading wafers into and out of other transport tools and / or load locks connected to or interlocked with a particular system.

[0099] Generally, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software, which receives and issues instructions, controls operations, enables cleaning operations, enables endpoint measurement, etc. The integrated circuit may include a firmware-type chip that stores program instructions, a chip defined as a digital signal processor (DSP), an application-specific integrated circuit (ASIC), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software).

[0100] Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files) that define operational parameters for performing specific operations on, in relation to, or on a semiconductor wafer. In some embodiments, the operational parameters may be part of a recipe defined by a process engineer to achieve one or more processing steps during the manufacturing of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0101] In some implementations, the controller may be integrated with or coupled to the system, or otherwise be part of or coupled to a computer networked to the system, or a combination of both. For example, the controller may perform wafer processing remotely within the “cloud” or as part of the fab host computer system. The computer may enable remote access to the system, monitor the current progress of manufacturing operations, investigate the history of past manufacturing operations, investigate trends or performance metrics from multiple manufacturing operations, change parameters of the current process, set processing steps to follow the current process, or start a new process.

[0102] In some examples, a remote computer (e.g., a server) can provide process recipes to the system over a network, which may include a local network or the internet. The remote computer may include a user interface that allows input or programming of parameters and / or settings, which are then transmitted from the remote computer to the system. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. The parameters may be specific to the type of processing to be performed and the type of tool that the controller is configured to interface with or control.

[0103] Accordingly, as described above, the controller may be distributed using, for example, one or more discrete controllers, which are collectively networked and operate for a common purpose, such as the processing and control described herein. An example of a distributed controller for such purposes is one or more integrated circuits on a chamber that communicate with one or more remotely located integrated circuits (at the platform level or as part of a remote computer, for example), and are combined to control the processing on the chamber.

[0104] Examples of systems, though not limited to them, may include plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, clean chambers or modules, beveled edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing systems related to or usable for the fabrication and / or manufacture of semiconductor wafers.

[0105] As described above, depending on one or more processing steps performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, nearby tools, neighboring tools, tools located throughout the factory, a main computer, another controller, or tools used in material transfer to or from tool locations and / or load ports in a semiconductor manufacturing plant, carrying wafer containers.

Claims

1. 1. An edge ring for a substrate processing system, comprising: a ring-shaped body; an annular channel disposed in the annulus in a circumferential direction along an inner diameter of the annulus, the annulus including N distinct sections, where N is an integer greater than 1; N injection ports arranged circumferentially around the annulus for injecting one or more gases into the N different sections of the annular channel, respectively; a flange extending radially inward from the inner diameter of the annular body; an edge ring disposed on the flange and in fluid communication with the annular channel, the edge ring including a plurality of slits extending radially inward from the annular channel to supply the one or more gases.

2. 2. The edge ring of claim 1, wherein the plurality of slits are configured to supply the one or more gases to a top periphery of a substrate support assembly and below an outer edge of the substrate disposed on the substrate support assembly during processing of the substrate in the substrate processing system.

3. The edge ring of claim 1 , wherein the annular channel includes N division blocks that divide the annular channel into the N different sections.

4. 4. The edge ring of claim 3, the N injection ports are spaced equidistant from one another; An edge ring, wherein each of the N divided blocks is disposed between two of the N injection ports and is equidistant from the two of the N injection ports.

5. 10. The edge ring of claim 1, wherein an exterior of the top surface of the annular body is proximate an exhaust port of the substrate processing system.

6. 10. The edge ring of claim 1, wherein the edge ring is made from at least one of silicon and silicon carbide.

7. 1. A system comprising: an edge ring having N injection ports (N being an integer greater than 1) configured to selectively supply one or more gases; a gas supply system configured to supply the one or more gases to the N injection ports.

8. 8. The system of claim 7, The edge ring is an annular channel arranged circumferentially around an inner diameter of the edge ring and including N distinct sections; a flange extending radially inward from the inner diameter of the edge ring; a plurality of slits disposed in the flange, in fluid communication with the annular channel, and extending radially inward from the annular channel to supply the one or more gases; the N injection ports are arranged circumferentially about the edge ring for respectively injecting the one or more gases into the N different sections of the annular channel.

9. 10. The system of claim 8, wherein the plurality of slits are configured to supply the one or more gases to a top periphery of a substrate support assembly and below an outer edge of the substrate disposed on the substrate support assembly during processing of the substrate.

10. 9. The system of claim 8, the annular channel includes N division blocks that divide the annular channel into the N different sections; the N injection ports are spaced equidistant from one another; A system wherein each of the N divided blocks is disposed between two of the N injection ports and is equidistant from the two of the N injection ports.

11. 8. The system of claim 7, wherein the gas supply system supplies the same gas from the one or more gases to the N injection ports.

12. 8. The system of claim 7, wherein the gas supply system supplies the same gas of the one or more gases to the N injection ports at the same flow rate.

13. 8. The system of claim 7, wherein the gas supply system supplies the same gas of the one or more gases to the N injection ports at different flow rates.

14. 8. The system of claim 7, wherein the gas supply system supplies M gases (M is an integer satisfying 1<M≦N) of the one or more gases to the N injection ports.

15. 8. The system of claim 7, wherein the gas supply system supplies M gases (M is an integer satisfying 1<M≦N) of the one or more gases to the N injection ports at the same flow rate.

16. 8. The system of claim 7, wherein the gas supply system supplies M gases (M is an integer satisfying 1<M≦N) of the one or more gases to the N injection ports at different flow rates.

17. 8. The system of claim 7, wherein the one or more gases include one or more of a reactive gas and an inert gas.

18. 8. The system of claim 7, further comprising a substrate support assembly configured to support a substrate including a semiconductor wafer having an underside; The one or more gases are supplied to a region adjacent the underside of the semiconductor wafer.

19. 20. The system of claim 18, wherein the one or more gases remove etch by-products that accumulate on the underside of the semiconductor wafer during processing.

20. 8. The system of claim 7, further comprising a substrate support assembly configured to support a substrate including a semiconductor wafer; The one or more gases are delivered proximate to a periphery of the semiconductor wafer to reduce radial diffusion and improve radial edge uniformity.

21. 10. The system of claim 7, further comprising a processing chamber having one or more components, wherein the one or more gases precoat at least one of the one or more components.

22. 8. The system of claim 7, further comprising a substrate support assembly configured to support a substrate including a semiconductor wafer; The one or more gases provide a dilution zone for diluting radicals that have diffused beneath the periphery of the semiconductor wafer and between the edge ring and the substrate support assembly.

23. 8. The system of claim 7, further comprising a substrate support assembly configured to support a substrate including a semiconductor wafer having an underside; the one or more gases are used to form a ring on the underside of the semiconductor wafer; The system, wherein the ring is used to determine whether the semiconductor wafer is centered on the substrate support assembly.

24. 8. The system of claim 7, further comprising a substrate support assembly configured to support a substrate including a semiconductor wafer; The one or more gases clean an area of ​​the substrate support assembly that is below a periphery of the semiconductor wafer.

25. 8. The system of claim 7, The gas supply system includes: a plurality of gas sources for supplying the one or more gases; a plurality of valves associated with the plurality of gas sources and the N injection ports; The system further includes a controller configured to control the plurality of valves to selectively supply the one or more gases to the N injection ports at one or more flow rates.

26. 1. A method comprising: disposing an edge ring around a periphery of a substrate support assembly of a processing chamber, the edge ring including an annular channel separated into N distinct sections, where N is an integer greater than 1; supplying one or more gases to the N different sections of the annular channel via N injection ports circumferentially arranged in the edge ring; supplying the one or more gases to a top periphery of the substrate support assembly and beneath an outer edge of the substrate disposed on the substrate support assembly through slits in a flange extending radially inward from an inner diameter of the edge ring during processing of a substrate in the processing chamber.

27. 27. The method of claim 26, supplying the one or more gases at the same flow rate; The method further includes adjusting process uniformity at the outer edge of the substrate.

28. 27. The method of claim 26, providing the one or more gases at different flow rates; The method further comprising compensating for azimuthal process non-uniformities at the outer edge of the substrate.

29. 27. The method of claim 26, wherein the substrate comprises a semiconductor wafer, the processing comprises an etching process, the one or more gases comprise a reactive gas, and the method further comprises delivering the reactive gas from the edge ring during the etching process to prevent a buildup of material under the outer edge of the substrate.

30. 27. The method of claim 26, wherein the substrate comprises a semiconductor wafer, the processing comprises an etching process, the one or more gases comprise an inert gas, and the method further comprises supplying the inert gas from the edge ring during the etching process to protect a region of the substrate support assembly during the etching process.

31. 27. The method of claim 26, wherein the substrate comprises a cleaning wafer, the processing comprises a cleaning process, the one or more gases comprise an inert gas, and the method further comprises supplying the inert gas from the edge ring during the cleaning process to protect components of the processing chamber proximate the edge ring from wear during the cleaning process.

32. 27. The method of claim 26, wherein the substrate comprises a cleaning wafer, the processing comprises a cleaning process, and the one or more gases comprise a cleaning gas, the method further comprising supplying the cleaning gas from the edge ring during the cleaning process to clean components of the processing chamber proximate to the edge ring during the cleaning process.

33. 27. The method of claim 26, depositing material patternwise beneath the outer edge of the substrate using the one or more gases; determining whether the substrate is centered on the substrate support assembly based on whether the pattern is concentric with a center of the substrate.

34. 27. The method of claim 26, further comprising supplying the one or more gases through the edge ring to deposit material on the outer edge of the substrate.

35. 27. The method of claim 26, further comprising delivering the one or more gases through the edge ring to apply a coating to a component of the processing chamber proximate to the edge ring.

36. 27. The method of claim 26, further comprising supplying the one or more gases at the same flow rate to the N different sections of the annular channel via the N injection ports.

37. 27. The method of claim 26, further comprising supplying the one or more gases at different flow rates to the N different sections of the annular channel via the N injection ports.

38. 27. The method of claim 26, supplying a first gas of the one or more gases through a first port of the N injection ports at a first flow rate; supplying a second gas of the one or more gases through a second port of the N injection ports at a second flow rate.

39. 39. The method of claim 38, wherein the first gas comprises a reactive gas and the second gas comprises an inert gas.

40. 39. The method of claim 38, wherein the first gas comprises a first reactive gas and the second gas comprises a second reactive gas.

Images